JP4613014B2 - Cmosイメージセンサの単位画素 - Google Patents
Cmosイメージセンサの単位画素 Download PDFInfo
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- JP4613014B2 JP4613014B2 JP2004011645A JP2004011645A JP4613014B2 JP 4613014 B2 JP4613014 B2 JP 4613014B2 JP 2004011645 A JP2004011645 A JP 2004011645A JP 2004011645 A JP2004011645 A JP 2004011645A JP 4613014 B2 JP4613014 B2 JP 4613014B2
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- transistor
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- reset
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- 238000009792 diffusion process Methods 0.000 claims description 41
- 238000012546 transfer Methods 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
22 トランスファートランジスター
23 フローティング拡散領域(FD)
24 リセットトランジスター
25 ドライブトランジスター
26 セレクトトランジスター
Tx トランスファー制御信号
Rx リセット制御信号
Dx ドライブ制御信号
Sx セレクト制御信号
LoadTr ロードトランジスタ
Vout 出力端
Claims (10)
- フォトダイオードと、
該フォトダイオード及びフローティング拡散領域の間にソース−ドレイン領域が形成され、ゲートにトランスファー制御信号が印加されるトランスファートランジスターと、
前記フローティング拡散領域と一定の電源電圧VDDが供給される電源電圧端との間にソース−ゲート領域が形成され、前記ゲートは前記電源電圧端に接続され、ドレインに印加されたリセット制御信号により前記フローティング拡散領域をリセットさせるリセットトランジスターと、
ゲートが前記フローティング拡散領域に接続され、ドレインが前記電源電圧端に接続されたドライブトランジスターと、
ゲートにセレクト制御信号が印加され、ソースが出力端に接続され、ドレインが前記ドライブトランジスターのソースに接続されたセレクトトランジスターと
を備えていることを特徴とするCMOSイメージセンサの単位画素。 - 前記リセットトランジスターが、前記ドライブトランジスター及び前記セレクトトランジスターと同じしきい電圧を有することを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
- 前記リセット制御信号が、金属線を介して前記リセットトランジスターのドレインに印加されることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
- 前記リセットトランジスターが形成された第1活性領域と前記ドライブトランジスターが形成された第2活性領域とが、フィールド酸化膜により隔離されていることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
- 前記リセットトランジスターのゲートが、
ポリシリコン膜から形成され、
前記電源電圧端とバッティングコンタクト構造で接続されていることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。 - フォトダイオードと、
該フォトダイオード及びフローティング拡散領域の間にソース−ドレイン領域が形成され、ゲートにトランスファー制御信号が印加されるトランスファートランジスターと、
前記フォトダイオードと一定の電源電圧VDDが供給される電源電圧端との間にソース−ゲート領域が形成され、前記ゲートは前記電源電圧端に接続され、ドレインに印加されたリセット制御信号により前記フォトダイオードをリセットさせるリセットトランジスターと、
ゲートが前記フローティング拡散領域に接続され、ドレインが前記電源電圧端に接続されたドライブトランジスターと、
ゲートにセレクト制御信号が印加され、ソースが出力端に接続され、ドレインが前記ドライブトランジスターのソースに接続されたセレクトトランジスターと
を備えていることを特徴とするCMOSイメージセンサの単位画素。 - 前記リセットトランジスターが、前記ドライブトランジスター及び前記セレクトトランジスターと同じしきい電圧を有することを特徴とする請求項6に記載のCMOSイメージセンサの単位画素。
- 前記リセット制御信号が、金属線を介して前記リセットトランジスターのドレインに印加されることを特徴とする請求項6に記載のCMOSイメージセンサの単位画素。
- 前記リセットトランジスターが形成された第1活性領域と前記ドライブトランジスターが形成された第2活性領域とが、フィールド酸化膜により隔離されていることを特徴とする請求項6に記載のCMOSイメージセンサの単位画素。
- 前記リセットトランジスターのゲートが、
ポリシリコン膜から形成され、
前記電源電圧端とバッティングコンタクト構造で接続されていることを特徴とする請求項6に記載のCMOSイメージセンサの単位画素。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030027884A KR100955735B1 (ko) | 2003-04-30 | 2003-04-30 | 씨모스 이미지 센서의 단위화소 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004336004A JP2004336004A (ja) | 2004-11-25 |
JP4613014B2 true JP4613014B2 (ja) | 2011-01-12 |
Family
ID=33308372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004011645A Expired - Fee Related JP4613014B2 (ja) | 2003-04-30 | 2004-01-20 | Cmosイメージセンサの単位画素 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6900485B2 (ja) |
JP (1) | JP4613014B2 (ja) |
KR (1) | KR100955735B1 (ja) |
Families Citing this family (102)
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US6900485B2 (en) | 2005-05-31 |
KR100955735B1 (ko) | 2010-04-30 |
US20040217426A1 (en) | 2004-11-04 |
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