JP4607613B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4607613B2 JP4607613B2 JP2005033351A JP2005033351A JP4607613B2 JP 4607613 B2 JP4607613 B2 JP 4607613B2 JP 2005033351 A JP2005033351 A JP 2005033351A JP 2005033351 A JP2005033351 A JP 2005033351A JP 4607613 B2 JP4607613 B2 JP 4607613B2
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- film
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- semiconductor substrate
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- silicon oxide
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 61
- 230000003647 oxidation Effects 0.000 claims description 59
- 238000007254 oxidation reaction Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 53
- 229920001709 polysilazane Polymers 0.000 claims description 38
- 229920000642 polymer Polymers 0.000 claims description 32
- 239000002904 solvent Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 52
- 229910004298 SiO 2 Inorganic materials 0.000 description 51
- 238000002955 isolation Methods 0.000 description 49
- 229910052581 Si3N4 Inorganic materials 0.000 description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 41
- 239000000243 solution Substances 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000008096 xylene Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Non-Volatile Memory (AREA)
Description
また、流動性を有するTEOS(Tetraethoxysilane)ガスとO3(オゾン)ガスとを反応させて、シリコン酸化膜を形成することにより、埋め込みを行う方法がある。
過水素化シラザン重合体を、炭素を含む溶媒に分散することによって生成された過水素化シラザン重合体溶液を半導体基板上に塗布することにより、塗布膜を形成するステップと、
前記塗布膜に対して熱処理を行って、前記溶媒を揮発させることにより、ポリシラザン膜を形成するステップと、
前記半導体基板を所定の炉内に挿入し、前記炉内の圧力を一旦低下させた上で、前記炉内に水蒸気を導入することによって、前記炉内の圧力を上昇させながら、前記ポリシラザン膜に対して酸化処理を行うことにより、シリコン酸化膜を形成するステップと
を備えることを特徴とする。
シリコンを含む材料を、炭素を含む溶媒に分散することによって生成された所定の溶液を半導体基板上に塗布することにより、第1の膜を形成するステップと、
前記第1の膜に対して熱処理を行って、前記溶媒を揮発させることにより、第2の膜を形成するステップと、
前記半導体基板を所定の炉内に挿入し、前記炉内の圧力を一旦低下させた上で、前記炉内に水蒸気を導入することによって、前記炉内の圧力を上昇させながら、前記第2の膜に対して酸化処理を行うことにより、シリコン酸化膜を形成するステップと
を備えることを特徴とする。
図1〜図3に、本発明の第1の実施の形態による素子分離絶縁膜の形成方法を示す。図1に示すように、熱酸化法によって、半導体基板10上にシリコン酸化(SiO2)膜20を5nm程度形成した後、CVD法によって、後に行われるCMP法による研磨のストッパとなるシリコン窒化(SiN)膜30を150nm程度形成する。
化1 SiH2NH+2O→SiO2+NH3 …(1)
によって示される。
図7〜図10に、本発明の第2の実施の形態による素子分離絶縁膜の形成方法を示す。なお、本実施の形態は、NAND型フラッシュメモリのメモリセルトランジスタを分離するための素子分離絶縁膜を形成する場合を示し、この場合、半導体基板上にトンネル絶縁膜を介して浮遊ゲート電極を形成した後に、素子分離絶縁膜を形成する。
なお上述の実施の形態は一例であって、本発明を限定するものではない。例えば素子分離絶縁膜ではなく層間絶縁膜を形成する際に、第1及び第2の実施の形態による酸化処理を適用することも可能である。ここで、図11〜図13に、本発明の他の実施の形態による層間絶縁膜の形成方法を示す。
40、140 素子分離溝
60、180、390 塗布膜
70、190、400 ポリシラザン膜
80、110、160、200、410 シリコン酸化膜
120 ポリシリコン膜
170 間隙
370 シリサイド膜
380 シリコン窒化膜
Claims (5)
- 過水素化シラザン重合体を、炭素を含む溶媒に分散することによって生成された過水素化シラザン重合体溶液を半導体基板上に塗布することにより、塗布膜を形成するステップと、
前記塗布膜に対して熱処理を行って、前記溶媒を揮発させることにより、ポリシラザン膜を形成するステップと、
前記半導体基板を所定の炉内に挿入し、前記炉内の圧力を一旦低下させた上で、前記炉内に水蒸気を導入することによって、前記炉内の圧力を上昇させながら、前記ポリシラザン膜に対して酸化処理を行うことにより、シリコン酸化膜を形成するステップと
を備えることを特徴とする半導体装置の製造方法。 - 前記シリコン酸化膜を形成するステップでは、前記炉内に水蒸気を導入することによって、前記炉内の圧力を上昇させながら酸化処理を行い、前記炉内が所定の圧力に上昇した後は、当該圧力を保ちながらさらに所定時間酸化処理を行うことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記半導体基板の表面部分のうち、所望の領域を除去することにより、溝を形成するステップをさらに備え、
前記塗布膜を形成するステップでは、前記溝を埋め込むように、前記過水素化シラザン重合体溶液を前記半導体基板上に塗布することを特徴とする請求項1記載の半導体装置の製造方法。 - 前記半導体基板上に半導体素子を形成するステップをさらに備え、
前記塗布膜を形成するステップでは、前記過水素化シラザン重合体溶液を前記半導体基板及び前記半導体素子上に塗布することにより、層間絶縁膜となる前記塗布膜を形成することを特徴とする請求項1記載の半導体装置の製造方法。 - シリコンを含む材料を、炭素を含む溶媒に分散することによって生成された所定の溶液を半導体基板上に塗布することにより、第1の膜を形成するステップと、
前記第1の膜に対して熱処理を行って、前記溶媒を揮発させることにより、第2の膜を形成するステップと、
前記半導体基板を所定の炉内に挿入し、前記炉内の圧力を一旦低下させた上で、前記炉内に水蒸気を導入することによって、前記炉内の圧力を上昇させながら、前記第2の膜に対して酸化処理を行うことにより、シリコン酸化膜を形成するステップと
を備えることを特徴とする半導体装置の製造方法。
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TW095104377A TW200644154A (en) | 2005-02-09 | 2006-02-09 | Method of manufacturing semiconductor device |
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