JP4593115B2 - SiCOI基板を備えたショットキーパワーダイオード、およびその製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims abstract description 208
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002344 surface layer Substances 0.000 claims abstract description 34
- 239000007787 solid Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000001459 lithography Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 230000003313 weakening effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
a)前記シリコンカーバイド層の前記埋め込み絶縁層とは反対側の一表面にオーミック接触点を形成し、
b)オーミック接触点の形成に先立ち、前記シリコンカーバイド層上に絶縁体からなる表面層(24)を形成するとともに、前記シリコンカーバイド層の前記側面(36)は、前記シリコンカーバイド層の主面に対して角(β:20°<β<80°)を形成し、かつ
前記絶縁体からなる表面層(24)の側面(34)が、前記シリコンカーバイド層の前記側面(36)に隣接し、前記絶縁体からなる表面層(24)の主面に対して角(α:20°<α<80°)を形成するように、
前記オーミック接触の領域の外側で、前記絶縁体からなる表面層(24)およびシリコンカーバイド層を局所的にエッチングし、
c)次いで、前記絶縁体からなる表面層の側面および前記シリコンカーバイド層の側面を被覆する金属層(40)を堆積することにより、前記縦方向側面上にショットキー接触部を形成するステップを含むことを特徴とするパワージャンクションデバイスの製造方法。
12 固体キャリア
14 埋め込み層
16 シリコンカーバイド層
20 ドープ領域
24 表面層
30,40 金属層
34,36 逃げ面
Claims (13)
- 絶縁体からなる埋め込み層(14)により固体基体(12)から絶縁されたシリコンカーバイド層(16)を有するSiCOI型の基板(10)を備えたパワージャンクションデバイスであって、
前記シリコンカーバイド層(16)の表面層との間に少なくとも1つのショットキーコンタクトを有し、アノードを構成する第1の金属層(40)と、前記シリコンカーバイド層を被覆する絶縁体の表面層とを備え、
前記第1の金属層(40)は、前記シリコンカーバイド層(16)を被覆し且つ該シリコンカーバイド層の前記側面(36)に隣接する絶縁体からなる表面層(24)の1つの側面(34)を少なくとも部分的に覆って伸長するとともに、前記シリコンカーバイド層(16)の側面(36)と接触し、
前記シリコンカーバイド層の前記側面(36)は、前記シリコンカーバイド層(16)層の主面に対して角(β:20°<β<80°)を形成するとともに、
前記絶縁体からなる表面層(24)の側面(34)は、前記絶縁体からなる表面層(24)の主面に対して角(α:20°<α<80°)を形成することを特徴とするパワージャンクションデバイス。 - 請求項1に記載のパワージャンクションデバイスであって、
前記角(β)は、前記埋め込み絶縁層(14)と接触する前記シリコンカーバイド層(16)の主面に対して測定され、45°であることを特徴とするパワージャンクションデバイス。 - 請求項1に記載のパワージャンクションデバイスであって、
前記シリコンカーバイド層とオーミック接触し、カソードを形成する第2の金属層(30)を備えることを特徴とするパワージャンクションデバイス。 - 請求項1に記載のパワージャンクションデバイスであって、
前記アノードを形成する前記第1の金属層(40)は、シリコンからなる前記固体基体まで延設されることを特徴とするパワージャンクションデバイス。 - 請求項1に記載のパワージャンクションデバイスであって、
少なくとも1つのパワーダイオードと少なくとも1つのトランジスタとを備え、前記トランジスタは、前記シリコンカーバイド層に形成されたチャネルを有することを特徴とするパワージャンクションデバイス。 - 請求項1に記載のパワージャンクションデバイスであって、
直列又は並列に接続された複数のパワーダイオードを備えることを特徴とするパワージャンクションデバイス。 - 請求項4に記載のパワージャンクションデバイスであって、
前記第1及び第2の金属層は、櫛状部をそれぞれ備え、前記第1及び第2の金属層の前記櫛状部が互いにかみ合うことを特徴とするパワージャンクションデバイス。 - 絶縁体の埋め込み層(14)によりシリコンからなる固体基体(12)から絶縁されたシリコンカーバイド層(16)を有するSiCOI基板上に、パワージャンクションデバイスを製造するパワージャンクションデバイスの製造方法であって、
a)前記シリコンカーバイド層の前記埋め込み絶縁層とは反対側の一表面にオーミック接触点を形成し、
b)オーミック接触点の形成に先立ち、前記シリコンカーバイド層上に絶縁体からなる表面層(24)を形成するとともに、前記シリコンカーバイド層の前記側面(36)は、前記シリコンカーバイド層の主面に対して角(β:20°<β<80°)を形成し、かつ
前記絶縁体からなる表面層(24)の側面(34)が、前記シリコンカーバイド層の前記側面(36)に隣接し、前記絶縁体からなる表面層(24)の主面に対して角(α:20°<α<80°)を形成するように、
前記オーミック接触の領域の外側で、前記絶縁体からなる表面層(24)およびシリコンカーバイド層を局所的にエッチングし、
c)次いで、前記絶縁体からなる表面層の側面および前記シリコンカーバイド層の側面を被覆する金属層(40)を堆積することにより、前記縦方向側面上にショットキー接触部を形成する、
ステップを含むことを特徴とするパワージャンクションデバイスの製造方法。 - 請求項8に記載のパワージャンクションデバイスの製造方法であって、
前記局所的なエッチングは、前記縦方向側面に傾斜を付与するように、リソグラフィ・マスクと、前記リソグラフィ・マスクに対する特定の選択性を有するリソグラフィ剤とを用いてエッチングするようにしたことを特徴とするパワージャンクションデバイスの製造方法。 - 請求項9に記載のパワージャンクションデバイスの製造方法であって、
前記絶縁層の表面層(24)は、前記ステップb)でリソグラフィ・マスクとして用いられることを特徴とするパワージャンクションデバイスの製造方法。 - 請求項9に記載のパワージャンクションデバイスの製造方法であって、
前記ショットキー接触部は、金属層(40)と前記シリコンカーバイド層(16)との間に形成され、前記金属層(40)は、前記絶縁体からなる表面層(24)を部分的に覆って延設されていることを特徴とするパワージャンクションデバイスの製造方法。 - 請求項7に記載のパワージャンクションデバイスの製造方法であって、
前記ショットキー接触部は、金属層(40)と前記シリコンカーバイド層(16)との間に形成され、前記金属層(40)は、前記埋め込み絶縁層(14)に予め設けた開口部を通して前記固体基体(12)まで延設されていることを特徴とするパワージャンクションデバイスの製造方法。 - 請求項7に記載のパワージャンクションデバイスの製造方法であって、
オーミック接触点を形成する前記ステップは、前記シリコンカーバイド層にドープ領域(20)を形成し、その後、金属層(30)と前記ドープ領域(20)の周辺との間に重なり部分(d)を設けることにより、前記金属層(30)を前記ドープ領域の中央部に接触させて堆積することを特徴とするパワージャンクションデバイスの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0203165A FR2837322B1 (fr) | 2002-03-14 | 2002-03-14 | DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE |
PCT/FR2003/000787 WO2003077321A2 (fr) | 2002-03-14 | 2003-03-12 | Diode schottky de puissance a substrat sicoi, et procede de realisation d'une telle diode |
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JP2005531127A JP2005531127A (ja) | 2005-10-13 |
JP4593115B2 true JP4593115B2 (ja) | 2010-12-08 |
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JP2003575425A Expired - Lifetime JP4593115B2 (ja) | 2002-03-14 | 2003-03-12 | SiCOI基板を備えたショットキーパワーダイオード、およびその製造方法 |
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US (1) | US7166894B2 (ja) |
EP (1) | EP1483793B1 (ja) |
JP (1) | JP4593115B2 (ja) |
AT (1) | ATE522932T1 (ja) |
AU (1) | AU2003233372A1 (ja) |
FR (1) | FR2837322B1 (ja) |
WO (1) | WO2003077321A2 (ja) |
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US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
US7875506B2 (en) * | 2004-10-13 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Etching method and manufacturing method of semiconductor device |
WO2008038537A1 (fr) * | 2006-09-28 | 2008-04-03 | Hitachi Metals, Ltd. | Détecteur d'accélération |
JP2008190961A (ja) * | 2007-02-02 | 2008-08-21 | Hitachi Metals Ltd | ピエゾ抵抗型加速度センサー |
WO2008148095A1 (en) * | 2007-05-25 | 2008-12-04 | Astralux, Inc. | Hybrid silicon/non-silicon electronic device with heat spreader |
JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
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JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
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US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
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2002
- 2002-03-14 FR FR0203165A patent/FR2837322B1/fr not_active Expired - Fee Related
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2003
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- 2003-03-12 AU AU2003233372A patent/AU2003233372A1/en not_active Abandoned
- 2003-03-12 JP JP2003575425A patent/JP4593115B2/ja not_active Expired - Lifetime
- 2003-03-12 WO PCT/FR2003/000787 patent/WO2003077321A2/fr active Application Filing
- 2003-03-12 US US10/507,757 patent/US7166894B2/en not_active Expired - Lifetime
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WO2003077321A3 (fr) | 2004-04-15 |
FR2837322A1 (fr) | 2003-09-19 |
JP2005531127A (ja) | 2005-10-13 |
US7166894B2 (en) | 2007-01-23 |
FR2837322B1 (fr) | 2005-02-04 |
WO2003077321A2 (fr) | 2003-09-18 |
EP1483793B1 (fr) | 2011-08-31 |
ATE522932T1 (de) | 2011-09-15 |
US20050161760A1 (en) | 2005-07-28 |
EP1483793A2 (fr) | 2004-12-08 |
AU2003233372A1 (en) | 2003-09-22 |
AU2003233372A8 (en) | 2003-09-22 |
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