JP4568202B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4568202B2 JP4568202B2 JP2005283530A JP2005283530A JP4568202B2 JP 4568202 B2 JP4568202 B2 JP 4568202B2 JP 2005283530 A JP2005283530 A JP 2005283530A JP 2005283530 A JP2005283530 A JP 2005283530A JP 4568202 B2 JP4568202 B2 JP 4568202B2
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- acceleration sensor
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- 239000004065 semiconductor Substances 0.000 title claims description 184
- 230000001133 acceleration Effects 0.000 claims description 104
- 125000006850 spacer group Chemical group 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000006355 external stress Effects 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008642 heat stress Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Description
まず、本実施例において採用する半導体加速度センサチップ10の構成を図面と共に詳細に説明する。なお、本実施例では、ピエゾ抵抗効果、すなわち発生した応力に比例して抵抗値が変化する現象を利用した、3次元加速度センサを例に挙げて説明する。
次に、上述した半導体加速度センサチップ10をパッケージングすることで形成された、本実施例による半導体装置100の構成を図面と共に詳細に説明する。
次に、本実施例による半導体装置100の製造方法を図面と共に詳細に説明する。
以上のように、本実施例による半導体装置100は、内部にキャビティ(101a及び101b)を有するパッケージ(下部容器101、スペーサ111及び上部蓋112)と、キャビティ(101a及び101b)の何れかの面から突出する端子102と、キャビティ(101a及び101b)の何れの面にも接触しないように、端子102に固定された半導体加速度センサチップ10とを有して構成される。
次に、上述した半導体加速度センサチップ10をパッケージングすることで形成された、本実施例による半導体装置200の構成を図面と共に詳細に説明する。
以上のように、本実施例による半導体装置200は、内部にキャビティ(101a及び101b)を有するパッケージ(下部容器101、スペーサ111及び上部蓋112)と、キャビティ(101a及び101b)の何れかの面から突出する端子102及びダミー端子202と、キャビティ(101a及び101b)の何れの面にも接触しないように、端子102及びダミー端子202に固定された半導体加速度センサチップ10とを有して構成される。
11 固定部
11a 溝
12 梁部
13 錘部
13a 支持部
13b 主錘部
14 電極パッド
15 ピエゾ抵抗素子
100 半導体装置
101、101’ 下部容器
101A、101B グリーンシート
101a、101b キャビティ
102 端子
103 バンプ
104 キャスタレーション
104’ ビア配線
104A、104B 導体パターン
105 フットパターン
105’ 金属パッド
106 溝
106A、106B ビアホール
111 スペーサ
112 上部蓋
202 ダミー端子
Claims (8)
- 内部にキャビティを有するパッケージと、
前記キャビティの内部側面から前記キャビティの中央部側へ向けて突出し、かつ第1電極パッドに電気的に直接接続される導電性を有する端子である、支持部材と、
前記第1電極パッドを有し、かつ前記キャビティの何れの面にも接触しないように、前記支持部材と前記第1電極パッドとの接続により前記支持部材に固定された、素子の一部が変位可能な半導体素子と
を有することを特徴とする半導体装置。 - 前記半導体素子は、導電性のバンプを用いて前記支持部材に固定されていることを特徴とする請求項1記載の半導体装置。
- 前記支持部材はダミー端子であることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記支持部材は接地されることを特徴とする請求項1から請求項3の何れか1項に記載の半導体装置。
- 前記半導体素子は加速度センサであることを特徴とする請求項1から請求項4の何れか1項に記載の半導体装置。
- 前記支持部材は、少なくとも一部が前記錘部から所定の隙間を隔てつつ当該錘部上に延在することを特徴とする請求項5記載の半導体装置。
- 前記パッケージは、第1キャビティが開口された下部容器と、上下面を貫通する第2キャビティが開口されたスペーサと、前記第1キャビティと前記第2キャビティとからなる前記キャビティを封止する上部蓋とを有し、
前記支持部材は、前記下部容器と前記スペーサとの間から前記キャビティ内へ延在していることを特徴とする請求項1から請求項6の何れか1項に記載の半導体装置。 - 前記パッケージは、前記支持部材と電気的に接続された配線パターンと、当該配線パターンと電気的に接続された第2電極パッドとを有することを特徴とする請求項1から請求項7の何れか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005283530A JP4568202B2 (ja) | 2005-09-29 | 2005-09-29 | 半導体装置 |
US11/531,700 US7540190B2 (en) | 2005-09-29 | 2006-09-14 | Semiconductor device with acceleration sensor |
CNA2006101540515A CN1940571A (zh) | 2005-09-29 | 2006-09-20 | 半导体器件 |
KR1020060091347A KR20070036668A (ko) | 2005-09-29 | 2006-09-20 | 반도체 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005283530A JP4568202B2 (ja) | 2005-09-29 | 2005-09-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007095996A JP2007095996A (ja) | 2007-04-12 |
JP4568202B2 true JP4568202B2 (ja) | 2010-10-27 |
Family
ID=37958932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005283530A Expired - Fee Related JP4568202B2 (ja) | 2005-09-29 | 2005-09-29 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7540190B2 (ja) |
JP (1) | JP4568202B2 (ja) |
KR (1) | KR20070036668A (ja) |
CN (1) | CN1940571A (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009071263A (ja) * | 2007-08-20 | 2009-04-02 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
US8646332B2 (en) | 2007-09-03 | 2014-02-11 | Panasonic Corporation | Inertia force sensor |
JP2010008128A (ja) * | 2008-06-25 | 2010-01-14 | Yamaha Corp | Mems |
US8837164B2 (en) * | 2009-01-22 | 2014-09-16 | Kyocera Corporation | Substrate for mounting device and package for housing device employing the same |
DE102009001969A1 (de) * | 2009-03-30 | 2010-10-07 | Robert Bosch Gmbh | Sensormodul |
JP5568786B2 (ja) * | 2009-12-24 | 2014-08-13 | 新光電気工業株式会社 | 半導体パッケージの製造方法及び半導体パッケージ |
JP4985789B2 (ja) * | 2010-01-13 | 2012-07-25 | 株式会社デンソー | 力学量センサ |
US8991253B2 (en) | 2010-09-28 | 2015-03-31 | Infineon Technologies Ag | Microelectromechanical system |
US9075078B2 (en) * | 2010-09-28 | 2015-07-07 | Infineon Technologies Ag | Microelectromechanical accelerometer with wireless transmission capabilities |
KR101367016B1 (ko) * | 2011-06-08 | 2014-02-25 | 삼성전기주식회사 | 관성센서 |
JP2013002938A (ja) * | 2011-06-16 | 2013-01-07 | Seiko Epson Corp | センサーデバイス、およびその製造方法 |
US8436433B1 (en) * | 2011-10-13 | 2013-05-07 | Rosemount Aerospace Inc. | Unattached contained semiconductor devices |
WO2014002416A1 (ja) * | 2012-06-25 | 2014-01-03 | パナソニック株式会社 | 歪センサ |
JP2015068800A (ja) | 2013-09-30 | 2015-04-13 | セイコーエプソン株式会社 | 圧力センサー、電子機器および移動体 |
KR20160126212A (ko) | 2015-04-23 | 2016-11-02 | 삼성전기주식회사 | 압력 센서 패키지 |
KR20170004123A (ko) * | 2015-07-01 | 2017-01-11 | 삼성전기주식회사 | 센서 소자 및 그 제조 방법 |
ITUB20153580A1 (it) * | 2015-09-11 | 2017-03-11 | St Microelectronics Srl | Dispositivo sensore microelettromeccanico con ridotta sensibilita' agli stress e relativo procedimento di fabbricazione |
JP6545918B1 (ja) * | 2019-05-22 | 2019-07-17 | Imv株式会社 | 加速度センサコアユニット、加速度センサを載置する基板のたわみを防止する方法 |
US11987494B2 (en) * | 2020-11-24 | 2024-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wire-bond damper for shock absorption |
EP4260232A4 (en) * | 2021-02-12 | 2024-06-19 | KICTeam, Inc. | CLEANING CARD FOR MEDIA TRANSPORT DEVICE WITH RAISED SURFACE ELEMENT |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274735A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 孔実装可能なテ−プキヤリアタイプパツケ−ジ |
JPH06209062A (ja) * | 1993-01-11 | 1994-07-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
JPH06507048A (ja) * | 1992-02-14 | 1994-08-04 | シーティーエス・コーポレーション | インシトゥー・メタライゼーションを提供する封止電子パッケージ |
Family Cites Families (10)
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US5233871A (en) * | 1991-11-01 | 1993-08-10 | Delco Electronics Corporation | Hybrid accelerometer assembly |
JPH0694744A (ja) * | 1992-09-09 | 1994-04-08 | Mitsubishi Electric Corp | 半導体加速度検出装置 |
US5507182A (en) * | 1993-02-18 | 1996-04-16 | Nippondenso Co., Ltd. | Semiconductor accelerometer with damperless structure |
US6769319B2 (en) * | 2001-07-09 | 2004-08-03 | Freescale Semiconductor, Inc. | Component having a filter |
US6892578B2 (en) * | 2002-11-29 | 2005-05-17 | Hitachi Metals Ltd. | Acceleration sensor |
JP2004309188A (ja) | 2003-04-02 | 2004-11-04 | Matsushita Electric Works Ltd | 半導体加速度センサ |
JP2005127750A (ja) | 2003-10-21 | 2005-05-19 | Matsushita Electric Works Ltd | 半導体センサおよびその製造方法 |
JPWO2005062060A1 (ja) * | 2003-12-24 | 2007-12-13 | 日立金属株式会社 | 半導体型3軸加速度センサ |
JP2005283393A (ja) * | 2004-03-30 | 2005-10-13 | Fujitsu Media Device Kk | 慣性センサ |
JP4553720B2 (ja) * | 2004-12-21 | 2010-09-29 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
-
2005
- 2005-09-29 JP JP2005283530A patent/JP4568202B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-14 US US11/531,700 patent/US7540190B2/en not_active Expired - Fee Related
- 2006-09-20 CN CNA2006101540515A patent/CN1940571A/zh active Pending
- 2006-09-20 KR KR1020060091347A patent/KR20070036668A/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274735A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 孔実装可能なテ−プキヤリアタイプパツケ−ジ |
JPH06507048A (ja) * | 1992-02-14 | 1994-08-04 | シーティーエス・コーポレーション | インシトゥー・メタライゼーションを提供する封止電子パッケージ |
JPH06209062A (ja) * | 1993-01-11 | 1994-07-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7540190B2 (en) | 2009-06-02 |
US20070089511A1 (en) | 2007-04-26 |
KR20070036668A (ko) | 2007-04-03 |
CN1940571A (zh) | 2007-04-04 |
JP2007095996A (ja) | 2007-04-12 |
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