JP4567587B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4567587B2 JP4567587B2 JP2005357198A JP2005357198A JP4567587B2 JP 4567587 B2 JP4567587 B2 JP 4567587B2 JP 2005357198 A JP2005357198 A JP 2005357198A JP 2005357198 A JP2005357198 A JP 2005357198A JP 4567587 B2 JP4567587 B2 JP 4567587B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
Description
図10A〜図10Cに、200℃で脱ガス処理を行ってダマシン法で形成したCu配線の表面の顕微鏡写真をスケッチした図を示す。図10Aにおいては、Cu配線の表面に多数の盛り上がり部が発生している。図10Bにおいては、Cu配線に穴あき欠陥が発生している。図10Cにおいては、Cu配線とバリアメタル膜との界面が腐食され、界面に沿って欠陥が発生している。
(a)半導体基板上に形成された絶縁膜に凹部を形成し、該凹部の底面の少なくとも一部に、銅または銅合金からなる導電部材を露出させる工程と、
(b)前記凹部を形成した後、前記基板を10℃/s以下の昇温速度で300℃以上の温度まで昇温させ第1の脱ガス処理を行う工程と、
(b1)前記第1の脱ガス処理後、前記凹部の底面に形成されている前記導電部材の酸化皮膜を除去する工程と、
(e)前記酸化皮膜を除去した後、前記基板を10℃/s以下の昇温速度で昇温させ第2の脱ガス処理を行う工程と、
(c)前記第2の脱ガス処理の後、前記凹部内に充填されるように、前記絶縁膜上に導電膜を堆積させる工程と、
(d)堆積した前記導電膜を、前記絶縁膜が露出するまで研磨する工程と
を有する半導体装置の製造方法が提供される。
保護膜6の上に、低誘電率絶縁材料、例えばSiOC系材料、ポーラスシリカ等からなる層間絶縁膜10が形成されている。層間絶縁膜10の上面が、SiC系またはSiN系の保護膜11で覆われている。保護膜11及び層間絶縁膜10に、層間絶縁膜10の底面まで達し、導電プラグ5Bの上方を通過する配線溝15が形成されている。この配線溝15の内面がバリアメタル膜17で被覆され、配線溝15内に第1層目の銅配線18が充填されている。銅配線18は、導電プラグ5Bに電気的に接続される。バリアメタル膜17は、例えばTa、TaN、TiN、WN等で形成される。なお、バリアメタル膜17を、Ta膜とTaN膜との2層構造、またはTi膜とTiN膜との2層構造としてもよい。
配線層用層間絶縁膜23に配線溝28が形成され、ビア層用層間絶縁膜21にビアホール27が形成されている。配線溝28はエッチングストッパ膜22の上面まで達する。ビアホール27は、配線溝28の底面に開口するとともに、キャップ膜20を貫通して下層の配線18の上面まで達する。また、配線層用層間絶縁膜23には、他の複数の配線溝が形成されている。
図3に、基板温度の時間変化を示す。まず、図2Bに示した配線溝28等及びビアホール27を形成した基板を、脱ガス処理チャンバ内に装填し、チャンバ内を真空排気する。時刻t1において基板の加熱を開始する。時刻t1時点の基板温度をT0とする。昇温速度が10℃/s以下になる条件で処理温度T1まで基板温度を上昇させる。処理温度T1は、例えば350℃である。時刻t2で基板温度が処理温度T1に到達すると、時刻t3まで温度を一定に維持する。時刻t2からt3までの脱ガス処理時間は、例えば1分である。脱ガス処理が終了すると、基板温度を室温まで降下させ、基板を酸化皮膜除去処理用チャンバに移送する。この移送は、真空雰囲気を維持した状態で行う。
次に、図8を参照して、第2の実施例による半導体装置の製造方法について説明する。第2の実施例では、第1の実施例における酸化皮膜の除去処理後に、第2回目の脱ガス処理を行う。その他の工程は、第1の実施例による方法と同一である。
2 素子分離絶縁膜
3 MOSFET
4、10、100 層間絶縁膜
5A、17、29、59、115 バリアメタル膜
5B プラグ
6、11、24 保護膜
15、28、58、111 配線溝
18 配線
20、50 キャップ膜
21、51、102 ビア層用層間絶縁膜
22、52 エッチングストッパ膜
23、53、103 配線層用層間絶縁膜
27、57、110 ビアホール
30、60 導電部材
30A シード層
30B、116 導電膜
120 凸部
Claims (4)
- (a)半導体基板上に形成された絶縁膜に凹部を形成し、該凹部の底面の少なくとも一部に、銅または銅合金からなる導電部材を露出させる工程と、
(b)前記凹部を形成した後、前記基板を10℃/s以下の昇温速度で300℃以上の温度まで昇温させ第1の脱ガス処理を行う工程と、
(b1)前記第1の脱ガス処理後、前記凹部の底面に形成されている前記導電部材の酸化皮膜を除去する工程と、
(e)前記酸化皮膜を除去した後、前記基板を10℃/s以下の昇温速度で昇温させ第2の脱ガス処理を行う工程と、
(c)前記第2の脱ガス処理の後、前記凹部内に充填されるように、前記絶縁膜上に導電膜を堆積させる工程と、
(d)堆積した前記導電膜を、前記絶縁膜が露出するまで研磨する工程と
を有する半導体装置の製造方法。 - 前記工程eにおいて、前記工程bにおける第1の脱ガス処理よりも低い温度で第2の脱ガス処理を行う請求項1に記載の半導体装置の製造方法。
- 前記工程b1において、還元性雰囲気中で熱処理を行うことにより、前記酸化皮膜を除去する請求項1または2に記載の半導体装置の製造方法。
- 前記工程b1において、プラズマに晒すことにより、前記酸化皮膜を除去する請求項1〜3のいずれかに記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005357198A JP4567587B2 (ja) | 2005-12-12 | 2005-12-12 | 半導体装置の製造方法 |
US11/366,511 US8101513B2 (en) | 2005-12-12 | 2006-03-03 | Manufacture method for semiconductor device using damascene method |
Applications Claiming Priority (1)
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JP2005357198A JP4567587B2 (ja) | 2005-12-12 | 2005-12-12 | 半導体装置の製造方法 |
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JP2007165428A JP2007165428A (ja) | 2007-06-28 |
JP4567587B2 true JP4567587B2 (ja) | 2010-10-20 |
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JP2005357198A Expired - Fee Related JP4567587B2 (ja) | 2005-12-12 | 2005-12-12 | 半導体装置の製造方法 |
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JP (1) | JP4567587B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4567587B2 (ja) * | 2005-12-12 | 2010-10-20 | 富士通株式会社 | 半導体装置の製造方法 |
US8470390B2 (en) * | 2008-01-11 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Oxidation-free copper metallization process using in-situ baking |
US9502290B2 (en) | 2008-01-11 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Oxidation-free copper metallization process using in-situ baking |
JP2009228078A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Ltd | 電解メッキ液、電解メッキ方法、および半導体装置の製造方法 |
JP2010245235A (ja) * | 2009-04-03 | 2010-10-28 | Panasonic Corp | 半導体装置及びその製造方法 |
FR2950134B1 (fr) * | 2009-09-14 | 2011-12-09 | Commissariat Energie Atomique | Dispositif d'echange thermique a ebullition convective et confinee a efficacite amelioree |
JP2011216597A (ja) * | 2010-03-31 | 2011-10-27 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び成膜装置 |
CN102760832B (zh) * | 2011-04-29 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 相变半导体器件的制造方法以及相变半导体器件 |
Citations (5)
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JPH10242274A (ja) * | 1997-02-27 | 1998-09-11 | Sony Corp | 多層配線基板の製造方法 |
JP2000040700A (ja) * | 1998-07-24 | 2000-02-08 | Hitachi Ltd | 半導体装置の製造方法 |
JP2000164712A (ja) * | 1998-11-27 | 2000-06-16 | Sony Corp | 電子装置の製造方法 |
JP2004095728A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004096080A (ja) * | 2002-06-05 | 2004-03-25 | Samsung Electronics Co Ltd | 金属間絶縁膜のパターン形成方法 |
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US5413940A (en) * | 1994-10-11 | 1995-05-09 | Taiwan Semiconductor Manufacturing Company | Process of treating SOG layer using end-point detector for outgassing |
US6033584A (en) * | 1997-12-22 | 2000-03-07 | Advanced Micro Devices, Inc. | Process for reducing copper oxide during integrated circuit fabrication |
TW424265B (en) * | 1999-10-06 | 2001-03-01 | Mosel Vitelic Inc | Method for stabilizing semiconductor degas temperature |
US6531389B1 (en) * | 1999-12-20 | 2003-03-11 | Taiwan Semiconductor Manufacturing Company | Method for forming incompletely landed via with attenuated contact resistance |
US6319809B1 (en) * | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
US6528884B1 (en) * | 2001-06-01 | 2003-03-04 | Advanced Micro Devices, Inc. | Conformal atomic liner layer in an integrated circuit interconnect |
WO2004064147A2 (en) * | 2003-01-07 | 2004-07-29 | Applied Materials, Inc. | Integration of ald/cvd barriers with porous low k materials |
JP4219215B2 (ja) | 2003-05-30 | 2009-02-04 | 株式会社ルネサステクノロジ | 電子デバイスの製造方法 |
US7176119B2 (en) * | 2004-09-20 | 2007-02-13 | International Business Machines Corporation | Method of fabricating copper damascene and dual damascene interconnect wiring |
JP2006228990A (ja) * | 2005-02-17 | 2006-08-31 | Toshiba Corp | 半導体装置の製造方法、及び製造装置 |
US7144808B1 (en) * | 2005-06-13 | 2006-12-05 | Texas Instruments Incorporated | Integration flow to prevent delamination from copper |
US7253097B2 (en) * | 2005-06-30 | 2007-08-07 | Chartered Semiconductor Manufacturing, Ltd. | Integrated circuit system using dual damascene process |
JP4567587B2 (ja) * | 2005-12-12 | 2010-10-20 | 富士通株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-12-12 JP JP2005357198A patent/JP4567587B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-03 US US11/366,511 patent/US8101513B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10242274A (ja) * | 1997-02-27 | 1998-09-11 | Sony Corp | 多層配線基板の製造方法 |
JP2000040700A (ja) * | 1998-07-24 | 2000-02-08 | Hitachi Ltd | 半導体装置の製造方法 |
JP2000164712A (ja) * | 1998-11-27 | 2000-06-16 | Sony Corp | 電子装置の製造方法 |
JP2004096080A (ja) * | 2002-06-05 | 2004-03-25 | Samsung Electronics Co Ltd | 金属間絶縁膜のパターン形成方法 |
JP2004095728A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
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US20070134899A1 (en) | 2007-06-14 |
JP2007165428A (ja) | 2007-06-28 |
US8101513B2 (en) | 2012-01-24 |
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