JP4563682B2 - 画像形成方法および装置 - Google Patents
画像形成方法および装置 Download PDFInfo
- Publication number
- JP4563682B2 JP4563682B2 JP2003555282A JP2003555282A JP4563682B2 JP 4563682 B2 JP4563682 B2 JP 4563682B2 JP 2003555282 A JP2003555282 A JP 2003555282A JP 2003555282 A JP2003555282 A JP 2003555282A JP 4563682 B2 JP4563682 B2 JP 4563682B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- region
- adjusted
- density
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (28)
- 被加工物上に結像すべきパターンを調整するための方法であって、
画像を表すパターンを複数の領域に分割する工程、
前記複数の領域のパターン密度を計算する工程、
前記複数の領域の少なくとも一つの中の少なくとも一つの形態の形状および/もしくは寸法を、前記形態が位置する領域および少なくとも一つの他の領域のパターン密度に基づいて調節して前記パターンを調整する工程、
調整したパターンを少なくとも一つの音響光学変調器(AOM)へ送る工程、および
前記調整したパターンを使うことによって前記被加工物上に画像を創成する工程、を含む方法。 - 前記少なくとも一つの他の領域が、前記少なくとも一つの形態を調整すべき領域に隣接している請求項1に記載された方法。
- 前記少なくとも一つの他の領域が、前記少なくとも一つの形態を調整すべき領域に隣接していない請求項1に記載された方法。
- 他の領域が、前記少なくとも一つの形態を調整すべき領域に隣接しているのとしていないの両方である請求項1に記載された方法。
- 前記被加工物がマスクまたはレチクルである請求項1に記載された方法。
- 前記被加工物が半導体基板である請求項1に記載された方法。
- 前記領域が重複しない請求項1に記載された方法。
- 前記領域が少なくとも部分的に互いに重複する請求項1に記載された方法。
- 前記少なくとも一つの形態を線量によって調節する請求項1に記載された方法。
- 前記少なくとも一つの形態をサイズによって調節する請求項1に記載された方法。
- 前記少なくとも一つの形態をサイズと線量によって調節する請求項1に記載された方法。
- 前記領域が多角形である請求項1に記載された方法。
- 前記画像を創成する前に、前記密度を前記複数の領域の一部に対してだけ計算する請求項1に記載された方法。
- 残りの領域に対する密度は、前記画像を創成している間に計算する請求項13に記載された方法。
- 被加工物上に調整したパターンを結像するための装置であって、
電磁放射線源、
結像すべきパターンのデジタル表現に従って前記電磁放射線を変調するための少なくとも一つの音響光学変調器(AOM)、
前記パターンを分割した複数の領域のパターン密度を計算し、前記パターン密度を使って、結像すべき少なくとも一つの形態の形状および/もしくは寸法を、前記形態が位置する領域および少なくとも一つの他の領域の密度に依って調整するための計算器、を含む装置。 - 前記少なくとも一つの他の領域が、前記少なくとも一つの形態を調整すべき領域に隣接している請求項15に記載された装置。
- 前記少なくとも一つの他の領域が、前記少なくとも一つの形態を調整すべき領域に隣接していない請求項15に記載された装置。
- 領域が、前記少なくとも一つの形態を調整すべき領域に隣接しているのとしていないの両方である請求項15に記載された装置。
- 前記被加工物がマスクまたはレチクルである請求項15に記載された装置。
- 前記被加工物の半導体基板である請求項15に記載された装置。
- 前記領域が重複しない請求項15に記載された装置。
- 前記領域が少なくとも部分的に互いに重複する請求項15に記載された装置。
- 前記少なくとも一つの形態を線量によって調節する請求項15に記載された装置。
- 前記少なくとも一つの形態をサイズによって調節する請求項15に記載された装置。
- 前記少なくとも一つの形態をサイズと線量によって調節する請求項15に記載された装置。
- 前記領域が多角形である請求項15に記載された装置。
- 前記画像を創成する前に、前記密度を前記複数の領域の一部に対してだけ計算する請求項15に記載された装置。
- 残りの領域に対する密度は、前記画像を創成しながら計算する請求項27に記載された装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0104131A SE0104131D0 (sv) | 2001-12-10 | 2001-12-10 | Improved method and apparatus for image formation |
PCT/SE2002/002267 WO2003054632A1 (en) | 2001-12-10 | 2002-12-10 | Method and apparatus for image formation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005513548A JP2005513548A (ja) | 2005-05-12 |
JP4563682B2 true JP4563682B2 (ja) | 2010-10-13 |
Family
ID=20286249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003555282A Expired - Lifetime JP4563682B2 (ja) | 2001-12-10 | 2002-12-10 | 画像形成方法および装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7365829B2 (ja) |
EP (1) | EP1451641A1 (ja) |
JP (1) | JP4563682B2 (ja) |
KR (1) | KR20040064712A (ja) |
CN (1) | CN1278187C (ja) |
AU (1) | AU2002349857A1 (ja) |
SE (1) | SE0104131D0 (ja) |
WO (1) | WO2003054632A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7266803B2 (en) * | 2005-07-29 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout generation and optimization to improve photolithographic performance |
WO2007050023A1 (en) * | 2005-10-26 | 2007-05-03 | Micronic Laser Systems Ab | Writing apparatuses and methods |
US8122846B2 (en) * | 2005-10-26 | 2012-02-28 | Micronic Mydata AB | Platforms, apparatuses, systems and methods for processing and analyzing substrates |
JP6107059B2 (ja) * | 2012-11-02 | 2017-04-05 | 富士通セミコンダクター株式会社 | レイアウトパターンの補正方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63211621A (ja) * | 1987-02-26 | 1988-09-02 | Fujitsu Ltd | レ−ザ描画方法 |
JP2512184B2 (ja) * | 1990-01-31 | 1996-07-03 | 株式会社日立製作所 | 荷電粒子線描画装置及び描画方法 |
JPH04416A (ja) * | 1990-04-10 | 1992-01-06 | Nippon Seiko Kk | 可変ビーム成形装置及びこれを用いた露光装置 |
GB2293459B (en) * | 1994-09-22 | 1997-10-01 | Holtronic Technologies Ltd | Method for printing of a pattern of features |
US6312134B1 (en) * | 1996-07-25 | 2001-11-06 | Anvik Corporation | Seamless, maskless lithography system using spatial light modulator |
JP4131880B2 (ja) * | 1997-07-31 | 2008-08-13 | 株式会社東芝 | マスクデータ作成方法及びマスクデータ作成装置 |
SE517345C2 (sv) * | 1999-01-18 | 2002-05-28 | Micronic Laser Systems Ab | Metod och system för tillverkande av stora skärmpaneler med förbättrad precision |
JP3812266B2 (ja) * | 1999-02-18 | 2006-08-23 | 株式会社日立製作所 | 荷電粒子線描画装置及びパターン形成方法 |
JP3518400B2 (ja) * | 1999-03-18 | 2004-04-12 | 株式会社日立製作所 | 電子線描画装置および電子線を用いた描画方法 |
JP3508617B2 (ja) * | 1999-05-11 | 2004-03-22 | 株式会社日立製作所 | 電子線描画装置および電子線を用いた描画方法 |
AU5261200A (en) * | 1999-05-20 | 2000-12-12 | Micronic Laser Systems Ab | A method for error reduction in lithography |
US7444616B2 (en) * | 1999-05-20 | 2008-10-28 | Micronic Laser Systems Ab | Method for error reduction in lithography |
JP2000340481A (ja) * | 1999-05-26 | 2000-12-08 | Jeol Ltd | 電子ビーム描画装置における近接効果補正方法 |
JP2001135562A (ja) * | 1999-11-05 | 2001-05-18 | Hitachi Ltd | リソグラフィ装置 |
US6421180B1 (en) * | 2000-03-23 | 2002-07-16 | Harris Corporation | Apparatus for generating a laser pattern on a photomask and associated methods |
US6618185B2 (en) * | 2001-11-28 | 2003-09-09 | Micronic Laser Systems Ab | Defective pixel compensation method |
-
2001
- 2001-12-10 SE SE0104131A patent/SE0104131D0/xx unknown
-
2002
- 2002-12-10 CN CNB028245199A patent/CN1278187C/zh not_active Expired - Lifetime
- 2002-12-10 KR KR10-2004-7007850A patent/KR20040064712A/ko not_active Application Discontinuation
- 2002-12-10 WO PCT/SE2002/002267 patent/WO2003054632A1/en active Application Filing
- 2002-12-10 US US10/498,590 patent/US7365829B2/en not_active Expired - Lifetime
- 2002-12-10 EP EP02786338A patent/EP1451641A1/en not_active Withdrawn
- 2002-12-10 AU AU2002349857A patent/AU2002349857A1/en not_active Abandoned
- 2002-12-10 JP JP2003555282A patent/JP4563682B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
SE0104131D0 (sv) | 2001-12-10 |
WO2003054632A1 (en) | 2003-07-03 |
JP2005513548A (ja) | 2005-05-12 |
CN1602450A (zh) | 2005-03-30 |
EP1451641A1 (en) | 2004-09-01 |
AU2002349857A1 (en) | 2003-07-09 |
CN1278187C (zh) | 2006-10-04 |
US7365829B2 (en) | 2008-04-29 |
US20050082496A1 (en) | 2005-04-21 |
KR20040064712A (ko) | 2004-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6433348B1 (en) | Lithography using multiple pass raster-shaped beam | |
EP2359194B1 (en) | Image reading and writing using a complex two-dimensional interlace scheme | |
KR100393129B1 (ko) | 패턴발생에서근접효과의런타임보정을위한방법및장치 | |
US5725974A (en) | Method and apparatus for producing scanning data used to produce a photomask | |
KR100416131B1 (ko) | 이차원 다중 픽셀 플래쉬 필드를 이용한 래스터 형상 비임 및 전자 비임 노출 방법 | |
KR102380475B1 (ko) | 다중 빔 라이터의 단거리 변위의 보정 | |
JP2015165565A (ja) | 帯電粒子マルチビーム露光ツールにおける欠陥ビームレットの補償 | |
JP2002512702A (ja) | 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置 | |
KR100417906B1 (ko) | 다수의 픽셀 중에서 플래쉬 필드를 특정하는 형상 데이터를 결정하는 플래쉬 컨버터 및 그 방법 | |
JP7201364B2 (ja) | マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成 | |
JP7178841B2 (ja) | 限定的位置付けグリッドを用いるターゲットの照射方法 | |
JP2019075543A5 (ja) | ||
JP7392805B2 (ja) | 描画データ生成プログラム、マルチ荷電粒子ビーム描画プログラム及びコンピュータ読み取り可能な記録媒体 | |
KR100416132B1 (ko) | 기판과 충돌하는 에너지 비임의 형상을 제어하는 신호들을 발생시키는 컨버터 및 그 방법 | |
JP3930411B2 (ja) | 荷電ビーム描画装置及び描画方法 | |
CN110737178B (zh) | 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 | |
JP4563682B2 (ja) | 画像形成方法および装置 | |
JP2005521253A (ja) | 大量データフローをプリントする方法と装置 | |
KR20040005951A (ko) | 2 차원 다중 픽셀 플래시 필드를 이용한 래스터 형상 빔,전자 빔 노광 방법 | |
EP4095882A1 (en) | Pattern data processing for programmable direct-write apparatus | |
US7420710B2 (en) | Optical proximity correction in raster scan printing based on grayscale manipulation of the bitmap | |
US6360134B1 (en) | Method for creating and improved image on a photomask by negatively and positively overscanning the boundaries of an image pattern at inside corner locations | |
WO2002014952A2 (en) | Scan butting error reduction in a raster scan pattern generation system | |
Lu et al. | Making high-performance scattering-bar OPC masks with vector-scan, variable-shaped e-beam, and raster-scan laser mask writers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050714 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080527 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080827 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080903 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080929 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081006 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081027 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081127 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100323 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100521 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100713 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100729 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4563682 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |