JP4563016B2 - シリコン基板の複合面に酸化膜を形成する方法 - Google Patents
シリコン基板の複合面に酸化膜を形成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 48
- 229910052710 silicon Inorganic materials 0.000 title claims description 48
- 239000010703 silicon Substances 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 title claims description 30
- 239000002131 composite material Substances 0.000 title description 5
- 150000004767 nitrides Chemical class 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- -1 oxygen free radical Chemical class 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 150000003254 radicals Chemical class 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000003446 memory effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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Description
(1)シリコン基板の複合面に酸化膜を形成する方法であって、
シリコン基板を用意する工程と、
異なる結晶方位の少なくとも2つの面を有する基板に1組の構造を形成する工程と、
窒素を含む雰囲気中で基板を加熱することによって、前記少なくとも2つの面に窒化物層を形成する工程と、
前記少なくとも2つの面に、ほぼ等しい厚さを有する酸化物層を成長させる工程と、
を含む方法。
(2)前記酸化物層を成長させる工程は、少なくとも酸素フリー・ラジカルを形成する工程を含む上記(1)に記載の方法。
(3)前記酸化物を成長させる工程は、前記窒化物層の全てを酸化物に変える工程と、少なくとも前記シリコン基板のシリコンに化学反応を起こさせる工程とを含む上記(1)に記載の方法。
(4)前記酸化物を成長させる工程は、前記窒化物層の全てを酸化物に変える工程と、少なくとも前記シリコン基板のシリコンに化学反応を起こさせる工程とを含む上記(2)に記載の方法。
(5)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(1)に記載の方法。
(6)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(2)に記載の方法。
(7)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(3)に記載の方法。
(8)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(4)に記載の方法。
(9)前記窒化物の厚さは、2nm未満である上記(5)に記載の方法。
(10)前記窒化物の厚さは、2nm未満である上記(6)に記載の方法。
(11)前記窒化物の厚さは、2nm未満である上記(7)に記載の方法。
(12)前記窒化物の厚さは、2nm未満である上記(8)に記載の方法。
(13)前記酸素フリー・ラジカルを形成する工程は、約3.999×103 Pa(約30Torr)未満の圧力で酸化が行われる同じ処理チャンバ内で、水素と酸素に化学反応を起こさせる工程を含む上記(2)に記載の方法。
(14)前記酸化物を成長させる工程は、前記窒化物層の全てを酸化物に変える工程と、少なくとも前記シリコン基板のシリコンに化学反応を起こさせる工程とを含む上記(13)に記載の方法。
(15)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(13)に記載の方法。
(16)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(14)に記載の方法。
(17)シリコン基板に垂直電界効果トランジスタを形成する方法であって、
シリコン基板を用意する工程と、
異なる結晶方位の少なくとも2つの垂直面を有する基板に構造を形成する工程と、
前記基板を熱窒化することによって、前記少なくとも2つの垂直面に窒化物層を形成する工程と、
前記基板に形成されたトランジスタ本体領域に近接して上部および下部トランジスタ電極を形成する工程と、
酸化物を形成するために前記窒化物層と化学反応する少なくとも酸素フリー・ラジカルを形成することを含み、前記少なくとも2つの垂直面に、ほぼ等しい厚さを有する酸化物のゲート層を成長させる工程と、
前記ゲート層に隣接して設けられるトランジスタ・ゲートを形成する工程と、
を含む方法。
(18)前記酸化物を成長させる工程は、前記窒化物層の全てを酸化物に変える工程と、少なくとも前記シリコン基板のシリコンに化学反応を起こさせる工程とを含む上記(17)に記載の方法。
(19)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(17)に記載の方法。
(20)前記窒化物の厚さは、前記酸化物の厚さの1/3未満である上記(18)に記載の方法。
(21)前記酸素フリー・ラジカルを形成する工程は、約3.999×103 Pa(約30Torr)未満の圧力で酸化が行われる同じ処理チャンバ内で、水素と酸素に化学反応を起こさせる工程を含む上記(14)に記載の方法。
(22)前記酸化物を成長させる工程は、前記窒化物層の全てを酸化物に変える工程と、少なくとも前記シリコン基板のシリコンに化学反応を起こさせる工程とを含む上記(21)に記載の方法。
(23)前記トランジスタは、Fin−FETであり、前記少なくとも2つの垂直面は、前記シリコン基板の突出したピラー部の外面である上記(19)に記載の方法。
(24)前記トランジスタは、垂直トレンチ・トランジスタであり、前記少なくとも2つの垂直面は、前記シリコン基板に形成される開口の内面である上記(19)に記載の方法。
12,14 ゲート酸化物
20,40,60 ベース
22,25,42,45,62,65,121,122,125,141,142,145 厚さ
30 開口
32,36 領域
34 シリコン領域
Claims (9)
- シリコン基板の少なくとも2つの、互いに異なる結晶方位の側面に酸化膜を形成する方法であって、
シリコン基板を用意する工程と、
前記シリコン基板中もしくは基板上に、少なくとも2つの、互いに異なる結晶方位の側面を形成する工程であって、前記側面が基板中の開口の内面もしくは基板上のピラーの外面である、工程と、
反応性窒素を含むガス雰囲気中で前記基板を加熱することによって、前記側面に窒化物層を形成する工程と、
前記窒化物層が形成された前記側面に、前記窒化物層をすべて酸化物に変えた後、前記シリコン基板のシリコンを水素存在下で生成した酸素フリー・ラジカルにより酸化し、シリコン酸化物の層を成長させる工程と、
を含む、方法。 - 前記開口が、垂直トレンチ・トランジスタのトレンチである請求項1に記載の方法。
- 前記ピラーが、フィン型FETのフィンである請求項1に記載の方法。
- 前記酸化物層を成長させる工程は、少なくとも酸素フリー・ラジカルを形成する工程を含む請求項1〜3のいずれか1項に記載の方法。
- 前記窒化物層の厚さは、前記酸化物層の厚さの1/3未満である請求項1〜4のいずれか1項に記載の方法。
- 前記窒化物層の厚さは、2nm未満である請求項1〜5のいずれか1項に記載の方法。
- 前記酸素フリー・ラジカルを形成する工程は、3.999×103Pa(30Torr)未満の圧力で、酸化が行われる同じ処理チャンバ内で、水素と酸素に化学反応を起こさせる工程を含む請求項4に記載の方法。
- 前記反応性窒素を含有するガスが、N2、NH3、ヒドラジン(N2H4)およびこれらの混合物から選ばれる、請求項1〜7のいずれか1項記載の方法。
- 前記反応性窒素を含有するガスが、窒素含有ラジカルを含む、請求項1〜7のいずれか1項記載の方法。
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US10/284,508 US6727142B1 (en) | 2002-10-29 | 2002-10-29 | Orientation independent oxidation of nitrided silicon |
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JP2004153256A JP2004153256A (ja) | 2004-05-27 |
JP4563016B2 true JP4563016B2 (ja) | 2010-10-13 |
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JP (1) | JP4563016B2 (ja) |
DE (1) | DE10350354B4 (ja) |
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KR100486278B1 (ko) * | 2002-11-11 | 2005-04-29 | 삼성전자주식회사 | 신뢰성이 향상된 게이트 산화막 형성방법 |
US7273638B2 (en) * | 2003-01-07 | 2007-09-25 | International Business Machines Corp. | High density plasma oxidation |
DE102004054818B4 (de) * | 2004-11-12 | 2009-02-26 | Qimonda Ag | Verfahren zum reversiblen Oxidationsschutz von Mikro-Bauelementen |
US7382029B2 (en) | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations |
JP2010087167A (ja) * | 2008-09-30 | 2010-04-15 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US9515188B2 (en) | 2014-12-22 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistors having conformal oxide layers and methods of forming same |
US10269921B2 (en) | 2014-12-22 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Fin field effect transistors having conformal oxide layers and methods of forming same |
US10490475B2 (en) * | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
DE102016124968B4 (de) | 2016-12-20 | 2024-01-18 | Infineon Technologies Ag | Ausbilden von Siliziumoxidschichten durch Oxidation mit Radikalen |
KR102217847B1 (ko) * | 2017-08-11 | 2021-02-19 | 한양대학교 산학협력단 | 절연막의 제조 방법, 및 이를 이용한 절연막 |
CN115602696B (zh) * | 2020-03-18 | 2023-11-17 | 索尼半导体解决方案公司 | 成像装置和电子设备 |
JP7076490B2 (ja) | 2020-03-24 | 2022-05-27 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
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JPS62142318A (ja) * | 1985-12-17 | 1987-06-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6201276B1 (en) * | 1998-07-14 | 2001-03-13 | Micron Technology, Inc. | Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films |
US5940718A (en) * | 1998-07-20 | 1999-08-17 | Advanced Micro Devices | Nitridation assisted polysilicon sidewall protection in self-aligned shallow trench isolation |
US6214670B1 (en) * | 1999-07-22 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance |
US6740555B1 (en) * | 1999-09-29 | 2004-05-25 | Infineon Technologies Ag | Semiconductor structures and manufacturing methods |
US6150670A (en) | 1999-11-30 | 2000-11-21 | International Business Machines Corporation | Process for fabricating a uniform gate oxide of a vertical transistor |
US6362040B1 (en) | 2000-02-09 | 2002-03-26 | Infineon Technologies Ag | Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates |
US6358867B1 (en) | 2000-06-16 | 2002-03-19 | Infineon Technologies Ag | Orientation independent oxidation of silicon |
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US20040082197A1 (en) | 2004-04-29 |
US6727142B1 (en) | 2004-04-27 |
DE10350354A1 (de) | 2004-05-27 |
DE10350354B4 (de) | 2007-08-16 |
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