JP4538473B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4538473B2 JP4538473B2 JP2007166722A JP2007166722A JP4538473B2 JP 4538473 B2 JP4538473 B2 JP 4538473B2 JP 2007166722 A JP2007166722 A JP 2007166722A JP 2007166722 A JP2007166722 A JP 2007166722A JP 4538473 B2 JP4538473 B2 JP 4538473B2
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- integrated circuit
- circuit element
- semiconductor integrated
- capacitor
- thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16265—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
2 半導体集積回路素子
3 回路配線基板
4 積層チップキャパシタ
5 キャパシタ内蔵インターポーザ
10、11 半導体装置
12 電極パッド
15 半田バンプ
16 リードフレーム
17 ボンディングワイヤ
18 樹脂モールド
20 薄膜キャパシタ
21 シリコンウェハー
21a 研磨面
22 電極パッド
23 下部電極層
24 誘電体層
25 上部電極層
26 ポリイミド絶縁層
Claims (2)
- 支持基板と、前記支持基板上に配置された半導体集積回路素子と、前記半導体集積回路素子のデカップリングキャパシタとを備え、前記半導体集積回路素子とリードフレームとがワイヤボンディングにより電気的に接続される半導体装置であって、
前記デカップリングキャパシタは、前記半導体集積回路素子上に配置され、前記半導体集積回路素子上面の電極パッドに電気的に接続され、前記半導体集積回路素子上面における前記デカップリングキャパシタの基板を含めた高さが、前記ワイヤボンディングのワイヤ高さよりも低いことを特徴とする半導体装置。 - 前記支持基板はシリコンであることを特徴とする請求項1記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166722A JP4538473B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166722A JP4538473B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002210176A Division JP4077261B2 (ja) | 2002-07-18 | 2002-07-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007243229A JP2007243229A (ja) | 2007-09-20 |
JP4538473B2 true JP4538473B2 (ja) | 2010-09-08 |
Family
ID=38588377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007166722A Expired - Fee Related JP4538473B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置 |
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JP (1) | JP4538473B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4811437B2 (ja) * | 2008-08-11 | 2011-11-09 | 日本テキサス・インスツルメンツ株式会社 | Icチップ上への電子部品の実装 |
US8304854B2 (en) | 2008-11-13 | 2012-11-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor integrated circuit chip, multilayer chip capacitor and semiconductor integrated circuit chip package |
JP5229296B2 (ja) * | 2010-10-14 | 2013-07-03 | 日本テキサス・インスツルメンツ株式会社 | Icチップ上への電子部品の実装 |
US11562978B2 (en) | 2016-12-31 | 2023-01-24 | Intel Corporation | Decoupling capacitor mounted on an integrated circuit die, and method of manufacturing the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262069A (ja) * | 1988-08-26 | 1990-03-01 | Nec Corp | 半導体装置 |
JPH0362566A (ja) * | 1989-01-17 | 1991-03-18 | Texas Instr Inc <Ti> | デカップリングコンデンサを備えた集積回路パッケージ |
JPH04211191A (ja) * | 1990-02-09 | 1992-08-03 | Hitachi Ltd | 実装構造体 |
JP2001102512A (ja) * | 1999-10-01 | 2001-04-13 | Nec Corp | コンデンサ実装構造および方法 |
JP2001127237A (ja) * | 1999-10-29 | 2001-05-11 | Fujitsu Ltd | 高周波モジュール |
-
2007
- 2007-06-25 JP JP2007166722A patent/JP4538473B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262069A (ja) * | 1988-08-26 | 1990-03-01 | Nec Corp | 半導体装置 |
JPH0362566A (ja) * | 1989-01-17 | 1991-03-18 | Texas Instr Inc <Ti> | デカップリングコンデンサを備えた集積回路パッケージ |
JPH04211191A (ja) * | 1990-02-09 | 1992-08-03 | Hitachi Ltd | 実装構造体 |
JP2001102512A (ja) * | 1999-10-01 | 2001-04-13 | Nec Corp | コンデンサ実装構造および方法 |
JP2001127237A (ja) * | 1999-10-29 | 2001-05-11 | Fujitsu Ltd | 高周波モジュール |
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Publication number | Publication date |
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JP2007243229A (ja) | 2007-09-20 |
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