JP4509972B2 - 配線基板、埋め込み用セラミックチップ - Google Patents
配線基板、埋め込み用セラミックチップ Download PDFInfo
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- JP4509972B2 JP4509972B2 JP2006161700A JP2006161700A JP4509972B2 JP 4509972 B2 JP4509972 B2 JP 4509972B2 JP 2006161700 A JP2006161700 A JP 2006161700A JP 2006161700 A JP2006161700 A JP 2006161700A JP 4509972 B2 JP4509972 B2 JP 4509972B2
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- chip
- main surface
- layer
- ceramic
- terminal electrodes
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H05K2201/096—Vertically aligned vias, holes or stacked vias
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10712—Via grid array, e.g. via grid array capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
[第2実施形態]
[第3実施形態]
11,11C…基板コア
12…コア主面としての上面
13…コア裏面としての下面
31…ビルドアップ層としての第1ビルドアップ層
32…第2ビルドアップ層
33,34,35,36…層間絶縁層としての樹脂絶縁層
42…導体層
91…収容穴部
92…充填剤
101,101A,101D,101E,101F,101G…埋め込み用セラミックチップとしてのセラミックキャパシタ
102,202…チップ第1主面としての上面
103,203…チップ第2主面及びチップ主面としての下面
104…セラミック焼結体
105…セラミック誘電体層
106…埋め込み用セラミックチップの側面
111,112…第1端子電極としての第1外部端子電極
116…メタライズ層
117…段差部
118…第1主面側凸部としてのダムメタライズ層
119…第2主面側凸部及び凸部としてのダムメタライズ層
121,122…第2端子電極及び端子電極としての第2外部端子電極
131,132,204…内部導体としてのビア導体
141…内部導体としての第1内部電極層
142…内部導体としての第2内部電極層
181…金属層
201…埋め込み用セラミックチップとしてのセラミックチップ
W12…第2主面側凸部の幅
L22…第2主面側凸部までの距離
Claims (31)
- コア主面及びコア裏面を有し、少なくとも前記コア主面にて開口する収容穴部を有する基板コアと、
チップ第1主面及びチップ第2主面を有するセラミック焼結体、前記セラミック焼結体の内部に形成された内部導体、前記チップ第1主面上に突設され前記内部導体に導通するメタライズ層からなる複数の第1端子電極、前記チップ第2主面上に突設され前記内部導体に導通するメタライズ層からなる複数の第2端子電極を有し、前記コア主面と前記チップ第1主面とを同じ側に向けた状態で前記収容穴部内に収容された埋め込み用セラミックチップと、
前記収容穴部の内面と前記埋め込み用セラミックチップの側面との隙間を埋めて前記埋め込み用セラミックチップを固定する充填剤と、
層間絶縁層及び導体層を前記コア主面及び前記チップ第1主面の上にて交互に積層したビルドアップ層と
を備え、
前記複数の第2端子電極を包囲する第2主面側凸部を前記チップ第2主面上に突設し、
前記第2主面側凸部の外縁がチップ縁と重なるように配置され、
前記第2主面側凸部はニッケルを主材料として形成され、前記第2主面側凸部の表面は銅めっき層により全体的に被覆され、前記銅めっき層の表面は粗化されている
ことを特徴とする配線基板。 - コア主面及びコア裏面を有し、前記コア主面及び前記コア裏面の両方にて開口する収容穴部を有する基板コアと、
チップ第1主面及びチップ第2主面を有するセラミック焼結体、前記セラミック焼結体の内部に形成された内部導体、前記チップ第1主面上に突設され前記内部導体に導通する複数の第1端子電極、前記チップ第2主面上に突設され前記内部導体に導通する複数の第2端子電極を有し、前記コア主面と前記チップ第1主面とを同じ側に向けかつ前記コア裏面と前記チップ第2主面とを同じ側に向けた状態で前記収容穴部内に収容された埋め込み用セラミックチップと、
前記収容穴部の内面と前記埋め込み用セラミックチップの側面との隙間を埋めて前記埋め込み用セラミックチップを固定する充填剤と、
層間絶縁層及び導体層を前記コア主面及び前記チップ第1主面の上にて交互に積層した第1ビルドアップ層と、
層間絶縁層及び導体層を前記コア裏面及び前記チップ第2主面の上にて交互に積層した構造を有する第2ビルドアップ層と
を備え、
前記複数の第2端子電極を包囲する第2主面側凸部を前記チップ第2主面上に突設し、
前記第2主面側凸部の外縁がチップ縁と重なるように配置され、
前記第2主面側凸部はニッケルを主材料として形成され、前記第2主面側凸部の表面は銅めっき層により全体的に被覆され、前記銅めっき層の表面は粗化されている
ことを特徴とする配線基板。 - 前記複数の第1端子電極を包囲する第1主面側凸部を前記チップ第1主面上に突設したことを特徴とする請求項1または2に記載の配線基板。
- 前記第1主面側凸部は前記複数の第1端子電極と同じまたはそれ以上の高さを有し、前記第2主面側凸部は前記複数の第2端子電極と同じまたはそれ以上の高さを有することを特徴とする請求項1乃至3のいずれか1項に記載の配線基板。
- 前記第1主面側凸部は、ニッケルを主材料とする焼結金属層であることを特徴とする請求項1乃至4のいずれか1項に記載の配線基板。
- 前記埋め込み用セラミックチップは、セラミック誘電体層を介して第1内部電極層と第2内部電極層とが交互に積層配置された構造のセラミックキャパシタであることを特徴とする請求項1乃至5のいずれか1項に記載の配線基板。
- 前記チップ第1主面上及び前記チップ第2主面上には段差部が存在するとともに、前記段差部を含む領域に前記第1主面側凸部及び前記第2主面側凸部がそれぞれ配置されていることを特徴とする請求項2乃至6のいずれか1項に記載の配線基板。
- 前記第2主面側凸部の幅が、50μm以上であることを特徴とする請求項1乃至7のいずれか1項に記載の配線基板。
- 前記銅めっき層は、前記複数の第2端子電極及び前記第2主面側凸部の表面に形成されるとともに、表面粗さRaが0.2μm以上であることを特徴とする請求項1乃至8のいずれか1項に記載の配線基板。
- 前記銅めっき層は5μm以上に形成されることを特徴とする請求項1乃至9のいずれか1項に記載の配線基板。
- 前記チップ第2主面において前記複数の第2端子電極同士の間、及び、前記複数の第2端子電極と前記第2主面側凸部との間にできる凹部が、前記層間絶縁層で埋められていることを特徴とする請求項1乃至10のいずれか1項に記載の配線基板。
- 高分子材料を主体として形成された基板コアの収容穴部内に収容され、前記収容穴部との隙間を充填剤で埋めた状態で使用されるセラミックチップであって、
チップ主面を有する板状のセラミック焼結体と、
前記セラミック焼結体の内部に形成された内部導体と、
前記チップ主面上に突設され前記内部導体に導通するメタライズ層からなる複数の端子電極と、
前記複数の端子電極を包囲するようにして前記チップ主面上に突設された凸部と
を備え、
前記凸部の外縁がチップ縁と重なるように配置され、
前記凸部はニッケルを主材料として形成され、前記凸部の表面は銅めっき層により全体的に被覆され、前記銅めっき層の表面は粗化されている
ることを特徴とする埋め込み用セラミックチップ。 - 前記凸部は前記複数の端子電極と同じまたはそれ以上の高さを有することを特徴とする請求項12に記載の埋め込み用セラミックチップ。
- 前記凸部は、ニッケルを主材料とする焼結金属層であることを特徴とする請求項12または13に記載の埋め込み用セラミックチップ。
- セラミック誘電体層を介して第1内部電極層と第2内部電極層とが交互に積層配置された構造のセラミックキャパシタであることを特徴とする請求項12乃至14のいずれか1項に記載の埋め込み用セラミックチップ。
- 前記チップ主面上には段差部が存在するとともに、前記段差部を含む領域に前記凸部が配置されていることを特徴とする請求項12乃至15のいずれか1項に記載の埋め込み用セラミックチップ。
- 前記凸部の幅が、50μm以上であることを特徴とする請求項12乃至16のいずれか1項に記載の埋め込み用セラミックチップ。
- 前記銅めっき層は、前記複数の第2端子電極及び前記第2主面側凸部の表面に形成されるとともに、表面粗さRaが0.2μm以上であることを特徴とする請求項12乃至17のいずれか1項に記載の埋め込み用セラミックチップ。
- 前記銅めっき層は5μm以上に形成されることを特徴とする請求項12乃至18のいずれか1項に記載の埋め込み用セラミックチップ。
- コア主面及びコア裏面を有し、前記コア主面及び前記コア裏面の両方にて開口する収容穴部を有する基板コアと、
チップ第1主面及びチップ第2主面を有するセラミック焼結体、前記セラミック焼結体の内部に形成された内部導体、前記チップ第1主面上に突設され前記内部導体に導通するメタライズ層からなる複数の第1端子電極、前記チップ第2主面上に突設され前記内部導体に導通するメタライズ層からなる複数の第2端子電極を有し、前記コア主面と前記チップ第1主面とを同じ側に向けかつ前記コア裏面と前記チップ第2主面とを同じ側に向けた状態で前記収容穴部内に収容された埋め込み用セラミックチップと、
前記収容穴部の内面と前記埋め込み用チップの側面との隙間を埋めて前記埋め込み用セラミックチップを固定する充填剤と、
層間絶縁層及び導体層を前記コア主面及び前記チップ第1主面の上にて交互に積層した構造を有した第1ビルドアップ層と、
層間絶縁層及び導体層を前記コア裏面及び前記チップ第2主面の上にて交互に積層した構造を有する第2ビルドアップ層と
を備え、前記チップ第2主面上の外周縁部に、チップ外周側からの前記充填剤の侵入を防止するダムとして機能する第2主面側ダムメタライズ層が配置され、
前記第2主面側ダムメタライズ層の外縁がチップ縁と重なるように配置され、
前記第2主面側ダムメタライズ層はニッケルを主材料として形成され、前記第2主面側ダムメタライズ層の表面は銅めっき層により全体的に被覆され、前記銅めっき層の表面は粗化されている
ことを特徴とする配線基板。 - 前記複数の第2端子電極は、グランド第2端子電極と電源第2端子電極とからなり、
前記グランド第2端子電極が前記第2主面側ダムメタライズ層と繋がっておりかつ複数の前記電源第2端子電極を包囲する第2プレーングランド電極とされているか、或いは、前記電源第2端子電極が前記第2主面側ダムメタライズ層と繋がっておりかつ複数の前記グランド第2端子電極を包囲する第2プレーン電源電極とされている
ことを特徴とする請求項20に記載の配線基板。 - 前記チップ第1主面上の外周縁部に、チップ外周側からの前記充填剤の侵入を防止するダムとして機能する第1主面側ダムメタライズ層が配置されており、
前記複数の第1端子電極は、グランド第1端子電極と電源第1端子電極とからなり、
前記グランド第1端子電極が前記第1主面側ダムメタライズ層と繋がっておりかつ複数の前記電源第1端子電極を包囲する第1プレーングランド電極とされているか、或いは、前記電源第1端子電極が前記第1主面側ダムメタライズ層と繋がっておりかつ複数の前記グランド第1端子電極を包囲する第1プレーン電源電極とされている
ことを特徴とする請求項21に記載の配線基板。 - 前記銅めっき層は5μm以上に形成されることを特徴とする請求項20乃至22のいずれか1項に記載の配線基板。
- 前記チップ第1主面上或いは前記チップ第2主面上に切欠部が存在するとともに、前記ダムメタライズ層は少なくとも前記切欠部まで形成されていることを特徴とする請求項20乃至22のいずれか1項に記載の配線基板。
- 前記ダムメタライズ層は前記切欠部を含む領域に配置されていることを特徴とする請求項24に記載の配線基板。
- 前記ダムメタライズ層は、外縁がR面とされていることを特徴とする請求項20乃至22のいずれか1項に記載の配線基板。
- 高分子材料を主体として形成された基板コアの収容穴部内に収容され、前記収容穴部との隙間を充填剤で埋めた状態で使用されるセラミックチップであって、
チップ主面を有する板状のセラミック焼結体と、
前記セラミック焼結体の内部に形成された内部導体と、
前記チップ主面上に突設され前記内部導体に導通するメタライズ層からなる複数の端子電極と
を有し、
前記チップ主面上の外周縁部に、チップ外周側からの前記充填剤の侵入を防止するダムとして機能するダムメタライズ層が配置されており、
前記複数の端子電極は、グランド端子電極と電源端子電極とからなり、
前記グランド端子電極が前記ダムメタライズ層と繋がっておりかつ複数の前記電源端子電極を包囲するプレーングランド電極とされているか、或いは、前記電源端子電極が前記ダムメタライズ層と繋がっておりかつ複数の前記グランド端子電極を包囲するプレーン電源電極とされ、
前記ダムメタライズ層の外縁がチップ縁と重なるように配置され、
前記ダムメタライズ層はニッケルを主材料として形成され、前記ダムメタライズ層の表面は銅めっき層により全体的に被覆され、前記銅めっき層の表面は粗化されている
ことを特徴とする埋め込み用セラミックチップ。 - 前記銅めっき層は5μm以上に形成されることを特徴とする請求項27に記載の埋め込み用セラミックチップ。
- 前記チップ主面上に切欠部が存在するとともに、前記ダムメタライズ層は少なくとも前記切欠部まで形成されていることを特徴とする請求項27に記載の埋め込み用セラミックチップ。
- 前記ダムメタライズ層は前記切欠部を含む領域に配置されていることを特徴とする請求項29に記載の埋め込み用セラミックチップ。
- 前記ダムメタライズ層は、外縁がR面とされていることを特徴とする請求項27に記載の埋め込み用セラミックチップ。
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JP2006161700A JP4509972B2 (ja) | 2005-09-01 | 2006-06-09 | 配線基板、埋め込み用セラミックチップ |
US11/508,968 US7557440B2 (en) | 2005-09-01 | 2006-08-24 | Wiring board and ceramic chip to be embedded |
US12/475,648 US7956454B2 (en) | 2005-09-01 | 2009-06-01 | Wiring board and ceramic chip to be embedded |
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JP5394625B2 (ja) * | 2007-10-05 | 2014-01-22 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
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JP5217584B2 (ja) | 2008-04-07 | 2013-06-19 | 株式会社村田製作所 | 積層セラミック電子部品 |
JP5185683B2 (ja) * | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ledモジュールの製造方法および照明器具の製造方法 |
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US7557440B2 (en) | 2009-07-07 |
US20090255719A1 (en) | 2009-10-15 |
US20070045814A1 (en) | 2007-03-01 |
US7956454B2 (en) | 2011-06-07 |
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