JP4488867B2 - パターン形成方法 - Google Patents
パターン形成方法 Download PDFInfo
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- JP4488867B2 JP4488867B2 JP2004322495A JP2004322495A JP4488867B2 JP 4488867 B2 JP4488867 B2 JP 4488867B2 JP 2004322495 A JP2004322495 A JP 2004322495A JP 2004322495 A JP2004322495 A JP 2004322495A JP 4488867 B2 JP4488867 B2 JP 4488867B2
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- exposure
- resin film
- pattern
- photosensitive resin
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- Expired - Fee Related
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-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
被処理基板である直径200mmの半導体基板(以下ウエハと称す)上に反射防止膜形成用塗布材料を回転塗布法により、塗布する。190℃、60秒の条件でベーク処理して、膜厚80nmの反射防止膜を形成する。
本実施形態では、処理ウエハの反り量を露光前の段階で計測し、その計測結果に基づき露光量条件を設定する。また、本実施形態では、補正露光量の算出方法だけが実施形態1と異なるため、重複する部分は省略した。
各ウェハショット位置に対してそれぞれ算出された補正露光量を用いて露光処理を行う(ステップST105)。露光後加熱処理(PEB)を行い(ステップST106)、現像する(ステップST107)。
Claims (7)
- 被処理基板上に感光性樹脂膜を形成する工程と、
前記感光性樹脂膜にエネルギー線を選択照射して、複数の露光領域に所望の潜像パターンをそれぞれ形成する工程と、
前記潜像パターンの形成後、前記被処理基板を熱板上に設置されたスペーサー上に載置する工程と、
前記熱板を用いて前記感光性樹脂膜を加熱する工程と、
前記潜像パターンに対応する感光性樹脂膜パターンを形成するために前記感光性樹脂膜を現像する工程とを含むパターン形成方法であって、
前記エネルギー線の照射時、前記被処理基板裏面と前記熱板表面との距離が大きい露光領域での前記エネルギー線の照射量が、前記被処理基板裏面と前記熱板表面との距離が小さい露光領域での前記エネルギー線の照射量よりも相対的に大きくなるように、各露光領域でのエネルギー線の照射量条件を設定することを特徴とするパターン形成方法。 - 前記照射量が、前記感光性樹脂膜形成後の前記被処理基板の反り量の分布と前記反り量に対する最適露光量との関係から、設定されることを特徴とする請求項1記載のパターン形成方法。
- 前記最適露光量が、フォトマスクに設けられた露光量モニターパターンに対応して前記感光性樹脂膜に形成された露光量モニターマークの潜像の寸法に対応する量から算出されることを特徴とする請求項2記載のパターン形成方法。
- 前記潜像パターンの形成が、被処理基板及びフォトマスクが一方向に平行な方向に水平移動する走査型露光装置を用いて行なわれることを特徴とする請求項1に記載のパターン形成方法。
- 前記照射量条件の設定が、前記露光領域内において行われることを特徴とする請求項4に記載のパターン形成方法。
- 前記感光性樹脂膜の現像を、前記感光性樹脂膜の局所的な領域を現像する現像液の供給/回収を行う現像液供給/回収ノズルが前記感光性樹脂膜上を走査することによって前記感光性樹脂膜の略全面を現像する現像装置を用いて行い、
前記現像時の前記現像液供給/回収ノズルの走査方向を、前記走査型露光装置での前記一方向と直交する方向に設定し、かつ、前記現像液供給/回収ノズルの走査速度を前記被処理基板裏面と前記熱板表面との距離が大きい露光領域における前記現像液供給/回収ノズルの走査速度を前記距離が小さい露光領域よりも相対的に遅くなるように設定することことを特徴とする請求項5に記載のパターン形成方法。 - 請求項1〜6の何れかに記載されたパターン形成方法を用いて、半導体基板を含む前記被処理基板上に前記感光性樹脂膜パターンを形成する工程を含むことを特徴とする半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322495A JP4488867B2 (ja) | 2004-11-05 | 2004-11-05 | パターン形成方法 |
TW094137392A TW200632594A (en) | 2004-11-05 | 2005-10-25 | Pattern forming method and a semiconductor device manufacturing method |
CNB2005101175201A CN100573320C (zh) | 2004-11-05 | 2005-11-02 | 图形形成方法 |
US11/266,197 US7563561B2 (en) | 2004-11-05 | 2005-11-04 | Pattern forming method and a semiconductor device manufacturing method |
US12/457,108 US7972765B2 (en) | 2004-11-05 | 2009-06-01 | Pattern forming method and a semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004322495A JP4488867B2 (ja) | 2004-11-05 | 2004-11-05 | パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006135080A JP2006135080A (ja) | 2006-05-25 |
JP4488867B2 true JP4488867B2 (ja) | 2010-06-23 |
Family
ID=36461318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004322495A Expired - Fee Related JP4488867B2 (ja) | 2004-11-05 | 2004-11-05 | パターン形成方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7563561B2 (ja) |
JP (1) | JP4488867B2 (ja) |
CN (1) | CN100573320C (ja) |
TW (1) | TW200632594A (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4488867B2 (ja) * | 2004-11-05 | 2010-06-23 | 株式会社東芝 | パターン形成方法 |
JP2008053464A (ja) * | 2006-08-24 | 2008-03-06 | Tokyo Electron Ltd | 塗布、現像装置、レジストパターン形成装置、塗布、現像方法、レジストパターンの形成方法及び記憶媒体。 |
JP5580546B2 (ja) | 2009-04-07 | 2014-08-27 | ルネサスエレクトロニクス株式会社 | レジストパターン形成方法 |
UA111589C2 (uk) | 2010-05-31 | 2016-05-25 | Аска Фармасьютікал Ко., Лтд. | Кристалічна форма похідної тієнопіримідину (варіанти) |
CN102566284A (zh) * | 2010-12-08 | 2012-07-11 | 无锡华润上华科技有限公司 | 热板温度均匀性测试方法 |
KR101888287B1 (ko) * | 2014-01-27 | 2018-08-13 | 도쿄엘렉트론가부시키가이샤 | 패터닝된 필름의 임계 치수를 시프팅하기 위한 시스템 및 방법 |
JP6365852B2 (ja) * | 2014-02-24 | 2018-08-01 | 株式会社ニコン | 多層膜反射鏡及びその製造方法、並びに露光装置 |
JP6307022B2 (ja) * | 2014-03-05 | 2018-04-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記録媒体 |
JP2016071135A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社Screenホールディングス | 描画方法 |
JP6432458B2 (ja) * | 2015-07-07 | 2018-12-05 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
CN105137721B (zh) * | 2015-09-24 | 2017-04-12 | 山东科技大学 | 扫描工作台各速度段进行激光直写二值图案的方法与装置 |
JP6638796B2 (ja) * | 2018-11-06 | 2020-01-29 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
WO2023233627A1 (ja) * | 2022-06-02 | 2023-12-07 | ギガフォトン株式会社 | 感光基板の現像方法、フォトマスクの作成方法、及び電子デバイスの製造方法 |
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JPH0864494A (ja) * | 1994-08-19 | 1996-03-08 | Fujitsu Ltd | レジストパターン形成方法とその装置 |
JPH10189424A (ja) * | 1996-12-27 | 1998-07-21 | Nikon Corp | 露光装置 |
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JP2000277423A (ja) * | 1999-03-26 | 2000-10-06 | Denso Corp | 半導体装置の製造方法 |
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JP2003203837A (ja) * | 2001-12-28 | 2003-07-18 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
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JP4271982B2 (ja) * | 2003-04-28 | 2009-06-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7189491B2 (en) * | 2003-12-11 | 2007-03-13 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
JP4488867B2 (ja) * | 2004-11-05 | 2010-06-23 | 株式会社東芝 | パターン形成方法 |
-
2004
- 2004-11-05 JP JP2004322495A patent/JP4488867B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-25 TW TW094137392A patent/TW200632594A/zh not_active IP Right Cessation
- 2005-11-02 CN CNB2005101175201A patent/CN100573320C/zh not_active Expired - Fee Related
- 2005-11-04 US US11/266,197 patent/US7563561B2/en active Active
-
2009
- 2009-06-01 US US12/457,108 patent/US7972765B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7972765B2 (en) | 2011-07-05 |
US20090246710A1 (en) | 2009-10-01 |
TW200632594A (en) | 2006-09-16 |
US7563561B2 (en) | 2009-07-21 |
US20060110687A1 (en) | 2006-05-25 |
CN100573320C (zh) | 2009-12-23 |
TWI315029B (ja) | 2009-09-21 |
JP2006135080A (ja) | 2006-05-25 |
CN1770009A (zh) | 2006-05-10 |
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