JP4478077B2 - 液晶表示装置の製造方法及び液晶表示装置 - Google Patents
液晶表示装置の製造方法及び液晶表示装置 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Description
−−第1の実施の形態−−
102:ゲート配線
104:ゲート電極
108:ゲート絶縁膜
110:純粋非晶質シリコーン層
112:不純物非晶質シリコーン層
120:金属パターン
124:ソース電極
126:ドレイン電極
128:第1保護膜
130:カラーフィルター層
132:第2保護膜
134:感光パターン
136:ドレインコンタクトホール
138:ストレージコンタクトホール
Claims (15)
- 基板上に第1マスク工程でゲート配線とゲート電極を形成する段階と、
前記ゲート配線とゲート電極を含む基板の全面にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上部に単一マスクを利用した第2マスク工程で、アクティブ層とオーミックコンタクト層、ソース電極、ドレイン電極、及び前記ゲート配線と交差して画素領域を定義するデータ配線を形成する段階と、
前記ソース及びドレイン電極とデータ配線を含む基板全面に第1保護膜を形成する段階と、
前記アクティブ層上部の第1保護膜上に第3マスク工程で、ブラックマトリックスを形成する段階と、
前記画素領域の前記第1保護膜上部に第4マスク工程で、カラーフィルター層を形成する段階と、
前記カラーフィルター及びブラックマトリックスが形成された基板の全面に第2保護膜を形成する段階と、
第5マスク工程で、前記画素領域及び前記ドレイン電極の一部に対応する第2保護膜を露出する感光パターンを形成する段階と、
前記感光パターンをマスクとして前記露出した第2保護膜を除去して、前記第2保護膜に接触する第1保護膜部分を除去して前記ドレイン電極の一部を露出する段階と、
前記ドレイン電極の露出した部分を含み、前記感光パターンが形成された基板全面に透明導電層を形成する段階と、
前記感光パターンと前記感光パターン上部の透明導電層を除去して、前記画素領域内に前記ドレイン電極の露出した部分と接触する画素電極を形成する段階と
を含む液晶表示装置の製造方法。 - 前記第2マスク工程は前記ゲート配線の上部に前記画素電極と接触する金属パターンを形成する段階を含むことを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第1マスク工程は前記ゲート配線の一端にゲートパッドを形成する段階を含んで、前記第2マスク工程は前記データ配線の一端にデータパッドを形成する段階を含むことを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記画素電極を形成する段階は前記ゲートパッドと接触するゲートパッド端子及び前記データパッドと接触するデータパッド端子を形成する段階を含むことを特徴とする請求項3に記載の液晶表示装置の製造方法。
- 前記画素電極と、ゲートパッド端子及びデータパッド端子は透明導電物質で形成されることを特徴とする請求項4に記載の液晶表示装置の製造方法。
- 前記画素電極を含む基板上に、前記ゲート及びデータ配線に対応する柱状のスペーサーを形成する段階をさらに含むことを特徴とする請求項4に記載の液晶表示装置の製造方法。
- 前記柱状のスペーサーを形成する段階は、前記ゲートパッド端子を覆う第1遮断層を形成する段階と、前記データパッド端子を覆う第2遮断層を形成する段階を含むことを特徴とする請求項6に記載の液晶表示装置の製造方法。
- 前記第2マスク工程は、
前記ゲート絶縁膜上に純粋非晶質シリコーン層と不純物非晶質シリコーン層と金属層と感光層を積層する段階と、
前記金属層上部に感光層を形成する段階と、
前記感光層上部に、透過部と半透過部及び遮断部を含む前記単一マスクを位置させる段階と、
前記単一マスクを介して前記感光層を露光して現像して、互いに異なる厚さを有する感光パターンを形成する段階と、
前記感光パターンにより露出した前記金属層と不純物非晶質シリコーン層及び純粋非晶質シリコーン層の一部を除去する段階と、
さらに薄い厚さを有する前記感光パターンの部分を除去して前記単一マスクの半透過部に対応する金属層を露出する段階と、
前記露出した金属層を除去して不純物非晶質シリコーンを露出する段階と、
前記露出した不純物非晶質シリコーン層を除去する段階と、
前記残っている感光パターンを除去する段階を含むことを特徴とする請求項1に記載の液晶表示装置の製造方法。 - 前記単一マスクを利用して前記データ配線下部に、純粋非晶質シリコーン層と不純物非晶質シリコーン層を含む半導体パターンを形成する段階をさらに含むことを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第2保護膜は前記画素領域で選択的にパターニングされて前記カラーフィルター層を選択的に露出することを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記画素電極と離隔されて同じ層上に位置する共通電極を形成する段階をさらに含むことを特徴とする請求項10に記載の液晶表示装置の製造方法。
- 基板と、
前記基板上に形成されたゲート配線とゲート電極と、
前記ゲート配線とゲート電極上部のゲート絶縁膜と、
前記ゲート電極上部のゲート絶縁膜上に形成されたアクティブ層と、
前記アクティブ層上部のオーミックコンタクト層と、
前記オーミックコンタクト層上部に形成されたソース電極とドレイン電極、及び前記ゲート配線と交差して画素領域を定義するデータ配線と、
前記ソース及びドレイン電極とデータ配線上部の第1保護膜と、
前記アクティブ層上部の前記第1保護膜上に形成されたブラックマトリックスと、
前記画素領域の第1保護膜上に形成されたカラーフィルター層と、
前記ブラックマトリックス及びカラーフィルター層上部に形成されて、前記画素領域のカラーフィルター層を露出する第2保護膜と、
前記第2保護膜と水平に重畳することなく前記第2保護膜と同じ層上に位置し、前記画素領域の露出したカラーフィルター層上部に形成されて、前記ドレイン電極と連結された画素電極と
を含む液晶表示装置。 - 前記ゲート配線及びデータ配線上部に柱状のスペーサーをさらに含むことを特徴とする請求項12に記載の液晶表示装置。
- 前記第2保護膜は前記画素領域で選択的にパターニングされて前記カラーフィルター層を選択的に露出することを特徴とする請求項12に記載の液晶表示装置。
- 前記画素領域で選択的に露出したカラーフィルター層上に、前記画素電極と離隔して設けられ同じ層上に位置する共通電極をさらに含むことを特徴とする請求項14に記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR20040050171 | 2004-06-30 | ||
KR1020050010589A KR101100674B1 (ko) | 2004-06-30 | 2005-02-04 | 씨오티 구조 액정표시장치용 어레이 기판 제조방법 |
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JP2006018295A JP2006018295A (ja) | 2006-01-19 |
JP4478077B2 true JP4478077B2 (ja) | 2010-06-09 |
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Cited By (1)
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KR101920935B1 (ko) * | 2010-09-13 | 2018-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 액정 표시 장치의 제작 방법 |
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US20060006385A1 (en) | 2006-01-12 |
US20100003776A1 (en) | 2010-01-07 |
US7858452B2 (en) | 2010-12-28 |
US7612373B2 (en) | 2009-11-03 |
JP2006018295A (ja) | 2006-01-19 |
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