JP4476105B2 - 窒化物半導体装置およびその製造方法 - Google Patents
窒化物半導体装置およびその製造方法 Download PDFInfo
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- JP4476105B2 JP4476105B2 JP2004337282A JP2004337282A JP4476105B2 JP 4476105 B2 JP4476105 B2 JP 4476105B2 JP 2004337282 A JP2004337282 A JP 2004337282A JP 2004337282 A JP2004337282 A JP 2004337282A JP 4476105 B2 JP4476105 B2 JP 4476105B2
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- 239000004065 semiconductor Substances 0.000 title claims description 69
- 150000004767 nitrides Chemical class 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 10, PP5917-5919.
図1を用いて、本発明の実施の形態1の窒化物半導体装置を説明する。図1に示すように、本実施の形態の半導体装置においては、P型コンタクト層1上にP型電極が設けられている。P型電極は、AuGa膜2、Au膜3、Pt膜4、およびAu膜5からなっている。P型コンタクト層1上にはAuGa膜2が設けられている。AuGa膜2上にはAu膜3が設けられている。Au膜3上にはPt膜4が設けられている。Pt膜4上にはAu膜5が設けられている。なお、前述の窒化物半導体装置においては、窒化物半導体であるP型コンタクト層1としてP型のAlxGa1-xN(0≦x≦1)が使用されている。
次に、図10を用いて、本発明の実施の形態2の窒化物半導体装置を説明する。本実施の形態の窒化物半導体装置においては、P型コンタクト層1の上面にP型電極材料が設けられている。P型電極は、Au膜8、AuGa膜9、Pt膜4、およびAu膜5からなっている。P型コンタクト層1上にはAu膜9が設けられている。Au膜8上にはAuGa膜9が設けられている。AuGa膜9上にはPt膜4が設けられている。Pt膜4上にはAu膜5が設けられている。
Claims (4)
- 窒化物半導体であるP型コンタクト層と、
前記P型コンタクト層上に設けられ、Ga原子の含有率が2%以上48%以下であるAuGa膜と、
前記AuGa膜上に設けられたAu膜とを備えた、窒化物半導体装置。 - 前記Au膜および前記AuGa膜の合計の膜厚に対する前記AuGa膜の膜厚の比が25%以上65%以下である、請求項1に記載の窒化物半導体装置。
- 窒化物半導体であるP型コンタクト層上にGa原子の含有率が2%以上48%以下であるAuGa膜を形成する工程と、
前記AuGa膜上にAu膜を形成する工程と、
前記AuGa膜と前記Au膜とを酸素雰囲気または大気雰囲気中において650℃以上860℃以下の温度で熱処理する工程とを備えた、窒化物半導体装置の製造方法。 - 前記Au膜および前記AuGa膜の合計の膜厚に対する前記AuGa膜の膜厚の比が25%以上65%以下である、請求項3に記載の窒化物半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004337282A JP4476105B2 (ja) | 2004-11-22 | 2004-11-22 | 窒化物半導体装置およびその製造方法 |
US11/274,422 US7842962B2 (en) | 2004-11-22 | 2005-11-16 | Nitride semiconductor device and method of manufacturing the same |
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JP2004337282A JP4476105B2 (ja) | 2004-11-22 | 2004-11-22 | 窒化物半導体装置およびその製造方法 |
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JP2006147914A JP2006147914A (ja) | 2006-06-08 |
JP4476105B2 true JP4476105B2 (ja) | 2010-06-09 |
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JP (1) | JP4476105B2 (ja) |
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KR100714638B1 (ko) * | 2006-02-16 | 2007-05-07 | 삼성전기주식회사 | 단면 발광형 led 및 그 제조방법 |
JP2008130717A (ja) | 2006-11-20 | 2008-06-05 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
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JP2000049114A (ja) * | 1998-07-30 | 2000-02-18 | Sony Corp | 電極およびその形成方法ならびに半導体装置およびその製造方法 |
JP2000223742A (ja) | 1999-01-29 | 2000-08-11 | Toshiba Corp | 窒素化合物半導体素子 |
US6653215B1 (en) * | 2000-10-05 | 2003-11-25 | Emcore Corporation | Contact to n-GaN with Au termination |
JP3889933B2 (ja) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | 半導体発光装置 |
JP2008130717A (ja) * | 2006-11-20 | 2008-06-05 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
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- 2004-11-22 JP JP2004337282A patent/JP4476105B2/ja active Active
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US7842962B2 (en) | 2010-11-30 |
US20060108596A1 (en) | 2006-05-25 |
JP2006147914A (ja) | 2006-06-08 |
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