JP4451874B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4451874B2 JP4451874B2 JP2006317988A JP2006317988A JP4451874B2 JP 4451874 B2 JP4451874 B2 JP 4451874B2 JP 2006317988 A JP2006317988 A JP 2006317988A JP 2006317988 A JP2006317988 A JP 2006317988A JP 4451874 B2 JP4451874 B2 JP 4451874B2
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Description
日経BP社発行の日経エレクトロニクス〔1994年、2月28日号、第111頁乃至第117頁〕
Claims (8)
- (a)金属で構成される枠体と、前記枠体に形成され、かつスリットが設けられた接着領域と、前記枠体の内側に位置するように前記接着領域に固定されたフィルム基材とを備えたフレーム構造体を準備する工程と、
(b)主面、裏面、及び前記主面に形成された複数の第2電極を有する半導体チップを準備する工程と、
(c)前記半導体チップの裏面を前記フィルム基材の樹脂封止領域に搭載する工程と、
(d)前記(c)工程の後、前記半導体チップの複数の第2電極と前記フィルム基材の前記樹脂封止領域に形成された複数の第1電極とを、複数のワイヤを介してそれぞれ電気的に接続する工程と、
(e)前記(d)工程の後、前記フィルム基材の表面において、前記樹脂封止領域と前記枠体との間の領域が露出するように、前記半導体チップ及び前記複数のワイヤを封止する樹脂封止体を前記樹脂封止領域上に形成する工程と、
(f)前記(e)工程の後、前記フィルム基材において、前記接着領域よりも内側を切断し、個片化する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記(e)工程では、さらに前記フィルム基材の前記表面に、サブランナー樹脂の一部が形成されることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記サブランナー樹脂は、前記樹脂封止体と前記枠体との間に位置することを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記サブランナー樹脂は、前記枠体の外側から内側に向かって延在していることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
さらに前記樹脂封止体から前記サブランナー樹脂を分割する工程を有することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記フィルム基材は、絶縁樹脂から成ることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記枠体は、前記フレーム構造体にエッチング加工又はプレス打抜き加工を施すことによって形成されていることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記フィルム基材は、前記接着領域に接着材を介して固定されていることを特徴とする半導体装置の製造方法。
Priority Applications (1)
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JP2006317988A JP4451874B2 (ja) | 2006-11-27 | 2006-11-27 | 半導体装置の製造方法 |
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JP2006317988A JP4451874B2 (ja) | 2006-11-27 | 2006-11-27 | 半導体装置の製造方法 |
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JP2003118043A Division JP3908689B2 (ja) | 2003-04-23 | 2003-04-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007081425A JP2007081425A (ja) | 2007-03-29 |
JP4451874B2 true JP4451874B2 (ja) | 2010-04-14 |
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JP2006317988A Expired - Fee Related JP4451874B2 (ja) | 2006-11-27 | 2006-11-27 | 半導体装置の製造方法 |
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JP (1) | JP4451874B2 (ja) |
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