JP4430990B2 - Circuit forming etchant for semi-additive method - Google Patents
Circuit forming etchant for semi-additive method Download PDFInfo
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Description
本発明は、セミアディティブ法によるプリント回路基板の製造プロセスにおいて、下地銅層をエッチング除去する際に使用する回路形成用エッチング液に関する。 The present invention relates to an etching solution for forming a circuit used when a base copper layer is removed by etching in a manufacturing process of a printed circuit board by a semi-additive method.
プリント回路基板の製造法として、これまでは、樹脂基板上に銅の薄層を形成した銅張り積層板上に、ドライフィルムの層を形成し、回路パターンを露光・現像した後、エッチング処理して非回路部分の銅を除去することによって、銅の回路パターンを形成する所謂サブトラクティブ法が主として用いられていた。しかしながら、近年のプリント基板の細線化に伴って、サブトラクティブ法では細線化に限界があるため、これに代わる方法として所謂セミアディティブ法が検討されている。 As a printed circuit board manufacturing method, a dry film layer is formed on a copper-clad laminate in which a thin copper layer is formed on a resin substrate, and a circuit pattern is exposed and developed, followed by an etching process. Thus, a so-called subtractive method for forming a copper circuit pattern by removing copper in a non-circuit portion has been mainly used. However, with the recent thinning of printed circuit boards, the subtractive method has a limit in thinning, so a so-called semi-additive method has been studied as an alternative method.
図１に、代表的なセミアディティブ法のプロセスの概要を示す。樹脂基板１の表面に、電解メッキ法によって銅メッキ層（下地層）２を形成する（ｂ）。或いは、予め樹脂基板にＰｄ薄層などを形成しておき、基板１の表面に無電解メッキ法によって銅無電解メッキ層（下地層）２を形成してもよい。これによって、基板の表面上に銅の薄層（下地層）が形成された基板（銅張り積層板）が得られる。或いは、予め基板の表面上に銅の薄層を形成した銅張り積層板を別途入手して使用してもよい。次に、ドライフィルムレジスト（ＤＦＲ）３によって非回路部分をマスキングする（ｃ）。次に、電解メッキなどによって銅メッキを施すことによって、非マスキング部分に銅回路層４を形成する（ｄ）。次に、ドライフィルムレジストを、苛性ソーダ水溶液、苛性カリ水溶液などによって除去する（ｅ）。次に、銅下地層の曝露されている部分、即ち非回路部分となる不要な銅下地層２をエッチングによって除去する（ｆ）。このようにして、銅回路パターン４を形成した後、必要に応じて、回路部をニッケル・金などによってメッキすることにより、端子の保護層を形成して、プリント回路基板が完成する。 FIG. 1 shows an outline of a typical semi-additive process. A copper plating layer (underlying layer) 2 is formed on the surface of the resin substrate 1 by electrolytic plating (b). Alternatively, a Pd thin layer or the like may be formed on a resin substrate in advance, and a copper electroless plating layer (underlayer) 2 may be formed on the surface of the substrate 1 by an electroless plating method. Thereby, a substrate (copper-clad laminate) in which a thin copper layer (underlayer) is formed on the surface of the substrate is obtained. Alternatively, a copper-clad laminate in which a thin copper layer is previously formed on the surface of the substrate may be separately obtained and used. Next, the non-circuit portion is masked with a dry film resist (DFR) 3 (c). Next, the copper circuit layer 4 is formed in the non-masking portion by performing copper plating by electrolytic plating or the like (d). Next, the dry film resist is removed with an aqueous caustic soda solution, an aqueous caustic potash solution (e). Next, an exposed portion of the copper underlayer, that is, an unnecessary copper underlayer 2 that becomes a non-circuit portion is removed by etching (f). After the copper circuit pattern 4 is formed in this way, the circuit portion is plated with nickel / gold as necessary to form a terminal protective layer, thereby completing the printed circuit board.
上記のようなセミアディティブ法によるプリント回路基板の製造プロセスにおいては、工程ｆの非回路部分の銅下地層を除去するための回路形成用エッチング液が重要である。
従来、銅及び銅合金の平面処理液としては、過酸化水素／硫酸を主成分とした種々のエッチング液が提唱されている。例えば、特許文献１，２，３，４などを参照されたい。しかしながら、これらのエッチング液は、銅の表面のソフトエッチングや、銅の表面形状を整えたり、銅の表面仕上げを行うことが目的であり、主に平面的な銅材の処理に対して有効であったが、上述のセミアディティブ工法における回路形成工程のように複雑な形状のエッチングを行うのに使用することはあまり想定されていなかった。このような事情により、回路形成用のエッチング液としては、塩化第２銅や塩化第２鉄が主として用いられており、過酸化水素／硫酸系のエッチング液は殆ど用いられていないのが現状である。
In the process of manufacturing a printed circuit board by the semi-additive method as described above, an etching solution for forming a circuit for removing the copper underlayer in the non-circuit part of step f is important.
Conventionally, various etching solutions mainly composed of hydrogen peroxide / sulfuric acid have been proposed as planar treatment solutions for copper and copper alloys. For example, see Patent Documents 1, 2, 3, 4 and the like. However, these etchants are intended for soft etching of copper surfaces, copper surface shapes, and copper surface finishing, and are effective mainly for planar copper processing. However, it has not been envisaged to be used for etching a complicated shape as in the circuit forming process in the semi-additive method described above. Under such circumstances, cupric chloride and ferric chloride are mainly used as circuit forming etching solutions, and hydrogen peroxide / sulfuric acid based etching solutions are hardly used at present. is there.
上述のように、近年の電子機器の超小型化に伴ってプリント基板の細線化が急速に進む中で細線化に対応可能なセミアディティブ工法の採用が広まりつつある。しかしながら、塩化第２銅、塩化第２鉄をセミアディティブ工法用の回路形成エッチング液として用いた場合、これらは液の粘度が高く、線幅が微細化すると線間の隙間に液が十分に浸透しにくくなるという問題があり、このため、セミアディティブ工法において塩化第２銅、塩化第２鉄系のエッチング液を回路形成エッチング液として用いて細線パターンを形成するのは難しかった。更に、塩化第２銅、塩化第２鉄系のエッチング液では廃液処理の問題もある。そこで、過酸化水素／硫酸系のエッチング液に注目が集まりつつある。特に、プリント回路基板の細線化、薄化、高機能化が進んでいる現在においては、今後益々細線回路形成用エッチング液の要求が高まることは予想に難くない。 As described above, the use of a semi-additive construction method that can cope with the thinning is becoming widespread while the thinning of the printed circuit board is rapidly progressing along with the recent miniaturization of electronic devices. However, when cupric chloride and ferric chloride are used as circuit forming etching solutions for the semi-additive method, the viscosity of these solutions is high, and when the line width is reduced, the solution penetrates sufficiently into the gaps between the lines. For this reason, it has been difficult to form a fine line pattern using a cupric chloride or ferric chloride etching solution as a circuit forming etching solution in the semi-additive method. Furthermore, cupric chloride and ferric chloride based etchants also have a problem of waste liquid treatment. Therefore, attention is being focused on hydrogen peroxide / sulfuric acid based etchants. In particular, at the present time when printed circuit boards are becoming thinner, thinner, and more advanced, it is not difficult to predict that the demand for etching solutions for forming thin wire circuits will increase in the future.
本発明は、上記のような現状下において、近年の回路微細化に対応可能なセミアディティブ工法用の回路形成エッチング液を提供することを目的とする。 An object of the present invention is to provide a circuit forming etching solution for a semi-additive method that can cope with recent circuit miniaturization under the above-described circumstances.
本発明者らは、上記の課題を解決するために鋭意研究を重ねた結果、過酸化水素／硫酸系のエッチング液に、添加剤としてアゾール類を加えることによって、セミアディティブ工法における非回路部分の銅下地層の選択的除去に極めて好適なエッチング液が提供されることを見出し、本発明を完成するに到った。 As a result of intensive studies to solve the above problems, the present inventors have added an azole as an additive to a hydrogen peroxide / sulfuric acid-based etching solution, thereby eliminating the non-circuit portion in the semi-additive method. It has been found that an etching solution that is extremely suitable for the selective removal of the copper underlayer is provided, and the present invention has been completed.
即ち、本発明の一態様は、過酸化水素及び硫酸を主成分とし、更にアゾール類を添加剤として含むことを特徴とするセミアディティブ工法用銅回路形成エッチング液を提供する。なお、本発明において「銅」とは、所謂金属銅と銅合金の両方を指す。 That is, one embodiment of the present invention provides a copper circuit forming etching solution for a semi-additive method characterized by containing hydrogen peroxide and sulfuric acid as main components and further containing an azole as an additive. In the present invention, “copper” refers to both so-called metallic copper and copper alloys.
本発明にかかるエッチング液は、過酸化水素と硫酸とを主成分として含む。本発明に係るエッチング液における過酸化水素の含有量は、１g/L〜１００g/Lが好ましく、５g/L〜５０g/Lがより好ましく、１０g/L〜４０g/Lが更に好ましい。また、本発明に係るエッチング液における硫酸の含有量は、１g/L〜１０００g/Lが好ましく、１０g/L〜５００g/Lがより好ましく、５０g/L〜２００g/Lが更に好ましい。本発明のエッチング液において、過酸化水素及び硫酸は、銅又は銅合金の溶解の主剤として機能する。 The etching solution according to the present invention contains hydrogen peroxide and sulfuric acid as main components. The content of hydrogen peroxide in the etching solution according to the present invention is preferably 1 g / L to 100 g / L, more preferably 5 g / L to 50 g / L, and still more preferably 10 g / L to 40 g / L. In addition, the content of sulfuric acid in the etching solution according to the present invention is preferably 1 g / L to 1000 g / L, more preferably 10 g / L to 500 g / L, and still more preferably 50 g / L to 200 g / L. In the etching solution of the present invention, hydrogen peroxide and sulfuric acid function as main components for dissolving copper or a copper alloy.
本発明にかかるエッチング液は、上述の主成分に加えて、更にアゾール類を添加剤として含むことを特徴とする。アゾール類を添加することによって、本発明にかかるエッチング液は、セミアディティブ工法の非回路部分の銅下地層を選択的に除去するのに極めて好適な特性を示す。 The etching solution according to the present invention is characterized by further containing an azole as an additive in addition to the above-mentioned main components. By adding azoles, the etching solution according to the present invention exhibits extremely suitable characteristics for selectively removing the copper underlayer in the non-circuit portion of the semi-additive method.
図２に示すように、セミアディティブ工法において、下地銅層２の上に回路用銅層４を形成した場合、下地銅層２と回路用銅層４とは一体化している訳ではなく、接合界面が存在する。この界面部分の物性（耐薬品性）は下地銅層及び回路用銅層４と比べて若干弱いため、エッチング工程においてこの界面部分のエッチングがより進行しやすいものと考えられる。しかしながら、従来銅材の表面処理用に用いられていた過酸化水素／硫酸系のエッチング液では、いずれの箇所もほぼ均等にエッチングが進行すると共に、回路用銅層４の間の隙間の深部ではエッチング液の交換が起こりにくいためにエッチングの進行が遅い。この結果、図３に示すような裾引き形状の回路が形成されてしまう。 As shown in FIG. 2, when the circuit copper layer 4 is formed on the base copper layer 2 in the semi-additive method, the base copper layer 2 and the circuit copper layer 4 are not integrated, but joined. There is an interface. Since the physical properties (chemical resistance) of the interface portion are slightly weaker than those of the base copper layer and the circuit copper layer 4, it is considered that the etching of the interface portion is more likely to proceed in the etching process. However, in the hydrogen peroxide / sulfuric acid based etching solution that has been used for the surface treatment of copper materials in the past, the etching proceeds almost uniformly in any part, and in the deep part of the gap between the circuit copper layers 4. Etching progresses slowly because the etchant hardly changes. As a result, a tail-shaped circuit as shown in FIG. 3 is formed.
本発明に係るエッチング液においては、添加剤としてアゾール類を含ませた。アゾール類は、下地銅層２と回路用銅層４との接合界面５におけるエッチングを周囲に比べて加速させる界面腐食増進剤として機能すると考えられる。即ち、アゾール類は、銅表面に吸着して過酸化水素と硫酸の銅への直接的な接触によるエッチングを阻害すると共に、界面５及びその周囲の銅から間接的に電子を過酸化水素に供与する被膜を形成するので、界面部分及びその周囲の銅が電子を放出して銅イオンをなって溶解するため、界面５及びその周囲の銅がエッチングされ易い。放出された電子は被膜を通して過酸化水素に受け渡される。この反応の繰り返しによって、接合界面５及びその周囲の銅のみが優先的に溶解する。アゾール類は、銅材の表面粗化剤としてエッチング液に添加して用いることができることが知られているが、これも同様の機構に基づいている。即ち、銅材の表面に微細欠陥があると、アゾール類はそれ以外の表面を優先的に保護するため、微細欠陥の内部が優先的にエッチングされ、銅材の表面が粗化する。 In the etching solution according to the present invention, azoles are included as additives. The azoles are considered to function as an interfacial corrosion enhancer that accelerates etching at the bonding interface 5 between the base copper layer 2 and the circuit copper layer 4 as compared to the surroundings. In other words, the azoles adsorb on the copper surface and inhibit etching by direct contact of hydrogen peroxide and sulfuric acid with copper, and indirectly donate electrons to the hydrogen peroxide from the interface 5 and its surrounding copper. Since the coating film to be formed is formed, the interface portion and its surrounding copper emit electrons and dissolve as copper ions, so that the interface 5 and its surrounding copper are easily etched. The emitted electrons are transferred to hydrogen peroxide through the coating. By repeating this reaction, only the bonding interface 5 and its surrounding copper are preferentially dissolved. It is known that azoles can be added to an etching solution as a surface roughening agent for a copper material, and this is also based on a similar mechanism. That is, if there is a fine defect on the surface of the copper material, the azoles preferentially protect the other surfaces, so the inside of the fine defect is preferentially etched and the surface of the copper material is roughened.
以上に説明したようなメカニズムによって、アゾール類を含む過酸化水素／硫酸系エッチング液によって非回路部分の銅下地層の選択的エッチングを行うと、理論的には図４に示すように接合界面５及びその周囲部分が大きく除去されて逆台形状の回路が形成されると考えられる。しかしながら、実際の操作では回路用銅層４の間の隙間の深部でエッチング液の交換が起こりにくいためにエッチングの進行が遅く、図３に示すような形状が形成される傾向がある。したがって、本発明に係るエッチング液を用いると、図３の形状と図４の形状とが合成されて図５に示すような裾引きのない直方体に近い形状の銅回路が形成されると考えられる。 When the copper underlayer in the non-circuit portion is selectively etched with a hydrogen peroxide / sulfuric acid-based etchant containing azoles by the mechanism described above, the bonding interface 5 is theoretically shown in FIG. In addition, it is considered that an inverted trapezoidal circuit is formed by largely removing the surrounding portion. However, in actual operation, since the etching solution is hardly exchanged in the deep part of the gap between the circuit copper layers 4, the etching progresses slowly, and the shape as shown in FIG. 3 tends to be formed. Therefore, when the etching solution according to the present invention is used, it is considered that the shape of FIG. 3 and the shape of FIG. 4 are combined to form a copper circuit having a shape close to a rectangular parallelepiped as shown in FIG. .
本発明に係るエッチング液において、アゾール類の添加量は、０．００１g/L〜５０g/Lが好ましく、０．０１g/L〜２０g/Lがより好ましく、０．１g/L〜５g/Lが更に好ましい。
また、本発明にかかるエッチング液において、過酸化水素と硫酸との量比は、重量比で１：１〜１：１０００が好ましく、１：２〜１：１００がより好ましく、１：４〜１：２０が更に好ましい。更に、本発明に係るエッチング液において、過酸化水素＋硫酸とアゾール類との量比は、重量比で、１５００：１〜１０：１が好ましく、１０００：１〜２０：１がより好ましく、２００：１〜５０：１が更に好ましい。
In the etching solution according to the present invention, the addition amount of azoles is preferably 0.001 g / L to 50 g / L, more preferably 0.01 g / L to 20 g / L, and 0.1 g / L to 5 g / L. Further preferred.
In the etching solution according to the present invention, the weight ratio of hydrogen peroxide to sulfuric acid is preferably 1: 1 to 1: 1000, more preferably 1: 2 to 1: 100, and 1: 4 to 1 in terms of weight ratio. : 20 is more preferable. Further, in the etching solution according to the present invention, the weight ratio of hydrogen peroxide + sulfuric acid to azoles is preferably 1500: 1 to 10: 1, more preferably 1000: 1 to 20: 1, and more preferably 200 to 200. : 1 to 50: 1 is more preferable.
本発明に係るエッチング液は、下地層として電解メッキによる銅層を形成するセミアディティブ工法での非回路部分の銅下地層の選択的エッチングに特に好適に用いることができる。 The etching solution according to the present invention can be particularly suitably used for selective etching of a copper underlayer in a non-circuit portion in a semi-additive method in which a copper layer is formed by electrolytic plating as the underlayer.
本発明は、上記に説明したエッチング液を用いて、所謂セミアディティブ工法によってプリント回路基板を作成する方法にも関する。即ち、本発明の他の態様は、樹脂基板上に銅下地層として銅の薄層を形成した銅張り積層板の銅下地層の上にドライフィルムレジスト等によって非回路部分のマスクパターンを形成し；基板を銅メッキ処理にかけて、ドライフィルムレジスト等のマスクパターンの間に銅回路パターンを作成し；ドライフィルムレジスト等を除去し；非回路部分の銅下地層をエッチングして銅回路を形成する；ことによって銅回路基板を形成する方法であって、非回路部分の銅下地層のエッチングを、上記記載の本発明にかかるエッチング液によって行なうことを特徴とする方法に関する。 The present invention also relates to a method for producing a printed circuit board by the so-called semi-additive method using the etching solution described above. That is, in another aspect of the present invention, a mask pattern of a non-circuit portion is formed by a dry film resist or the like on a copper underlayer of a copper-clad laminate in which a copper thin layer is formed as a copper underlayer on a resin substrate. Applying a copper plating process to the substrate to create a copper circuit pattern between mask patterns such as a dry film resist; removing the dry film resist; and etching a copper underlayer in a non-circuit portion to form a copper circuit; The present invention relates to a method for forming a copper circuit board, wherein the etching of the copper underlayer in the non-circuit portion is performed by the etching solution according to the present invention described above.
かかるセミアディティブ法によるプリント回路基板の製造方法において、基板上への銅下地層の形成は、当該技術において公知の方法によって行うことができる。例えば電解メッキ法によって基板上に銅の下地層を形成することもできるし、あるいは、基板に予めＰｄ薄層を形成しておき、基板上に無電解メッキ法によって銅の下地層を形成することもできる。更に、銅の薄層が形成された銅張り積層板を用いて本発明によってプリント回路基板を形成することもできる。しかしながら、本発明は、下地銅層が電解銅である基板を用いたセミアディティブ工法における下地銅のエッチングを行うのに特に好適である。形成した銅下地層上へのドライフィルムレジストによるマスクパターンの形成は、当該技術において公知の方法によって行なうことができる。銅メッキによる回路パターンの形成も、当該技術において公知の方法によって行なうことができる。例えば、電解メッキ法又は無電解メッキ法を使用することができる。銅メッキによる回路パターンの形成後に非回路部分のドライフィルムレジストを除去する工程は、当該技術において公知の方法によって行なうことができる。 In the method of manufacturing a printed circuit board by the semi-additive method, the formation of the copper underlayer on the board can be performed by a method known in the art. For example, a copper underlayer can be formed on the substrate by electrolytic plating, or a Pd thin layer is previously formed on the substrate and a copper underlayer is formed on the substrate by electroless plating. You can also. Furthermore, a printed circuit board can be formed according to the present invention using a copper-clad laminate on which a thin copper layer is formed. However, the present invention is particularly suitable for etching the base copper in a semi-additive method using a substrate whose base copper layer is electrolytic copper. Formation of the mask pattern with the dry film resist on the formed copper underlayer can be performed by a method known in the art. Formation of a circuit pattern by copper plating can also be performed by a method known in the art. For example, an electrolytic plating method or an electroless plating method can be used. The step of removing the dry film resist in the non-circuit portion after the circuit pattern is formed by copper plating can be performed by a method known in the art.
以下の実施例により本発明を更に具体的に説明するが、本発明は以下の記載によって限定されるものではない。 The following examples further illustrate the present invention, but the present invention is not limited by the following description.
実施例１
以下の成分を配合することによって、本発明にかかるエッチング液を形成した。
過酸化水素：２０g/L
硫酸：９０g/L
１Ｈ−ベンゾトリアゾール：０．２５g/L
１Ｈ−１，２，３−トリアゾール：１g/L
フェノールスルホン酸ナトリウム・１水和物：１g/L
純水：残量
なお、フェノールスルホン酸ナトリウムは、過酸化水素の安定剤として添加した。
Example 1
The etching liquid concerning this invention was formed by mix | blending the following components.
Hydrogen peroxide: 20g / L
Sulfuric acid: 90 g / L
1H-benzotriazole: 0.25 g / L
1H-1,2,3-triazole: 1 g / L
Sodium phenolsulfonate monohydrate: 1g / L
Pure water: remaining amount Sodium phenol sulfonate was added as a hydrogen peroxide stabilizer.
樹脂基板上に下地電解銅箔（厚さ３μm）を貼付し、ＤＦＲによって部分的にマスキングをした後に電解銅による回路を形成し、ＤＦＲを除去した。次に、非回路部分の電解銅箔層（銅下地層）に上記のエッチング液をスプレー塗布することによって銅下地層をエッチング除去して回路基板を形成した。エッチング工程でのエッチング液の温度は３０℃、エッチング液のスプレー圧は０．１MPa、エッチングの処理時間は９０秒であった。 A base electrolytic copper foil (thickness 3 μm) was pasted on the resin substrate, and after partially masking with DFR, a circuit with electrolytic copper was formed, and DFR was removed. Next, the copper base layer was etched away by spraying the above-mentioned etching solution onto the electrolytic copper foil layer (copper base layer) in the non-circuit portion, thereby forming a circuit board. In the etching step, the temperature of the etching solution was 30 ° C., the spray pressure of the etching solution was 0.1 MPa, and the etching processing time was 90 seconds.
ＤＦＲを除去した段階の基板の断面写真を図６及び図７に、非回路部分の電解銅箔層をエッチングによって除去した後の基板の断面写真を図８及び図９に示す。回路のやせ細りが極めて少なく、且つ裾引きのない回路が形成された。 6 and 7 show cross-sectional photographs of the substrate after the DFR is removed, and FIGS. 8 and 9 show cross-sectional photographs of the substrate after the electrolytic copper foil layer in the non-circuit portion is removed by etching. A circuit with very little thinning of the circuit and no tailing was formed.
実施例２
市販の銅張り積層板上の銅箔をエッチング除去した後、樹脂基板上に無電解銅箔（厚さ１μm）を形成し、ＤＦＲによって部分的にマスキングをした後に電解銅による回路を形成し、ＤＦＲを除去した。次に、非回路部分の電解銅箔層（銅下地層）に上記のエッチング液をスプレー塗布することによって銅下地層をエッチング除去して回路基板を形成した。エッチング工程でのエッチング液の温度は３０℃、エッチング液のスプレー圧は０．１MPa、エッチングの処理時間は３５秒であった。
Example 2
After etching and removing the copper foil on the commercially available copper-clad laminate, an electroless copper foil (thickness 1 μm) is formed on the resin substrate, and after partially masking with DFR, a circuit with electrolytic copper is formed. DFR was removed. Next, the copper base layer was etched away by spraying the above-mentioned etching solution onto the electrolytic copper foil layer (copper base layer) in the non-circuit portion, thereby forming a circuit board. The temperature of the etching solution in the etching process was 30 ° C., the spray pressure of the etching solution was 0.1 MPa, and the etching processing time was 35 seconds.
ＤＦＲを除去した段階の基板の断面写真を図１０及び図１１に、非回路部分の電解銅箔層をエッチングによって除去した後の基板の断面写真を図１２及び図１３に示す。回路のやせ細りが極めて少なく、且つ裾引きのない回路が形成された。本発明のエッチング液が下地電解銅だけではなく、下地無電解銅によるセミアディティブ工法にも適用可能であることが実証された。 10 and 11 are cross-sectional photographs of the substrate after the DFR is removed, and FIGS. 12 and 13 are cross-sectional photographs of the substrate after the electrolytic copper foil layer in the non-circuit portion is removed by etching. A circuit with very little thinning of the circuit and no tailing was formed. It has been demonstrated that the etching solution of the present invention can be applied not only to the base electrolytic copper but also to the semi-additive method using the base electroless copper.
比較例１
以下の成分を配合することによって、本比較例のエッチング液を形成した。
過酸化水素：２０g/L
硫酸：９０g/L
１，４−ブタンジオール：２０g/L
フェノールスルホン酸ナトリウム・１水和物：１g/L
純水：残量
Comparative Example 1
The etching liquid of this comparative example was formed by mix | blending the following components.
Hydrogen peroxide: 20g / L
Sulfuric acid: 90 g / L
1,4-butanediol: 20 g / L
Sodium phenolsulfonate monohydrate: 1g / L
Pure water: remaining amount
回路形成用エッチング液として上述の配合のものを用いた他は、実施例１と同様の操作によって回路の形成を行った。非回路部分の電解銅箔層をエッチングによって除去した後の基板の断面写真を図１４及び図１５に示す。形成された回路はやせ細りが大きいと共に、裾引きの多いものであった。 A circuit was formed by the same operation as in Example 1 except that the above-mentioned composition was used as the circuit forming etching solution. 14 and 15 show cross-sectional photographs of the substrate after the electrolytic copper foil layer in the non-circuit portion is removed by etching. The formed circuit was thin and thin, and had many tailings.
本発明にかかるセミアディティブ工法用回路形成エッチング液によれば、セミアディティブ工法による銅微細回路を形成するにあたって、回路部分のやせ細りや裾引き形状を抑制することができ、プリント回路基板の小型化及び薄化に十分対応することができる。 According to the circuit forming etching solution for a semi-additive method according to the present invention, when forming a copper microcircuit by a semi-additive method, it is possible to suppress the thinning and bottoming shape of the circuit part, and to reduce the size of the printed circuit board and It can cope with thinning sufficiently.
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| KR20150110481A (en) | 2013-03-29 | 2015-10-02 | 멜텍스 가부시키가이샤 | Copper etching solution |
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