CN115799077B - Copper-clad ceramic substrate step etching method - Google Patents
Copper-clad ceramic substrate step etching method Download PDFInfo
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- CN115799077B CN115799077B CN202310077414.3A CN202310077414A CN115799077B CN 115799077 B CN115799077 B CN 115799077B CN 202310077414 A CN202310077414 A CN 202310077414A CN 115799077 B CN115799077 B CN 115799077B
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Abstract
The invention discloses a copper-clad ceramic substrate step etching method, relates to the field of ceramic substrate preparation, and aims to solve the problems of copper surface crystal boundary enlargement and copper surface roughness caused by the conventional step etching, and the technical scheme is characterized in that: a copper-clad ceramic substrate step etching method comprises the following steps: s1, preparing a step etching solution: according to the mass percentage, the Sancy701A is 5%, the hydrogen peroxide is 45%, and the pure water is 50%; s2, heating the step etching solution: heating to 40 ℃ and continuously reducing the temperature in a gradient way; s3, soaking: soaking the substrate in an etching solution; s4, removing copper oxide: washing the substrate, and then putting the substrate into a pickling solution to remove surface copper oxide; s5, cleaning: and cleaning the residual liquid medicine on the substrate by using a water washing tank. The copper-clad ceramic substrate step etching method reduces the surface roughness of copper and the grain spacing and increases the glossiness.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a copper-clad ceramic substrate step etching method.
Background
With the rise and development of the third generation semiconductor, the power device, especially the semiconductor device, is promoted to be high-power, miniaturized, integrated and multifunctional continuously, and the performance of the packaging substrate is promoted greatly. The ceramic substrate is also a ceramic circuit board widely applied to electronic device packaging, and is mainly due to the advantages of high thermal conductivity, high temperature resistance, low thermal expansion coefficient, high mechanical strength, corrosion resistance, good insulating property and radiation resistance of the ceramic substrate. In the manufacturing process of the copper-clad ceramic substrate, a good step etching process is particularly important, and the existing step etching process can cause the increase of the grain boundary gap of the copper surface and the large roughness of the copper surface, so that a good step etching method needs to be developed urgently to further improve the yield of products.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a copper-clad ceramic substrate step etching method which can etch steps with high quality, has small grain boundary gap and reduces the roughness of a copper surface.
The technical purpose of the invention is realized by the following technical scheme: a copper-clad ceramic substrate step etching method is characterized by comprising the following steps:
s1, preparing a step etching solution: the water-based paint comprises 5% of Sancy701A, 45% of hydrogen peroxide and 50% of pure water in percentage by mass;
s2, heating the step etching solution: heating to 40 ℃ and continuously reducing the temperature in a gradient way;
s3, soaking: soaking the substrate in an etching solution;
s4, removing copper oxide: washing the substrate, and then putting the substrate into a pickling solution to remove surface copper oxide;
s5, cleaning: and cleaning the residual liquid medicine on the substrate by using a water washing tank.
The invention is further configured to: the Sancy701A consists of C12-C15 fatty alcohol polyoxyethylene 7 ether, a copper corrosion inhibitor, sulfuric acid isopropanol and pure water.
The invention is further configured to: wherein the mass percent of the C12-C15 fatty alcohol polyoxyethylene 7 ether is 3-15%; the mass percentage of the copper corrosion inhibitor is 0.5-2%; the mass percent of the sulfuric acid is 15-33%; the mass percent of the isopropanol is 18-40%, and the balance is pure water.
The invention is further configured to: in the step S4, the concentration of the pickling solution is 5%.
The invention is further configured to: in the step S3, the soaking time is 3-4min.
The invention is further configured to: the soaking mode is standing or shaking.
The invention is further configured to: in the step S2, after heating to 40 ℃, gradient cooling is carried out, and heat preservation is carried out for 30S every time when the temperature is reduced by 5 ℃ until etching is finished.
In conclusion, the invention has the following beneficial effects: according to the step etching process, a layer of copper can be stripped uniformly in an isotropic manner on the whole through the proportion of the liquid medicine and the control of the temperature, and the rate of stripping the copper by the liquid medicine is adjusted by utilizing the cooperation of the Sancy701A and the temperature, so that the surface roughness and the grain spacing of the copper are reduced and the surface glossiness of the copper is increased compared with the conventional step etching process.
Drawings
FIG. 1 is a comparison of grain boundary gaps under a microscope after etching by the prior art and the present invention;
FIG. 2 is a comparison of the grain boundary gaps under SEM after etching in the prior art and the inventive process.
Detailed description of the preferred embodiments
The invention is described in detail below with reference to the figures and examples.
The step etching refers to etching part of copper on the copper side wall of the ceramic copper-clad substrate to expose part of solder, and the exposed solder is the step; the step etch requires etching of the copper primarily on the sides, with the undercut copper being a very small layer (including on the sides). At present, the normal copper etching in the market mainly etches a pattern, the etched copper amount is larger, and the application direction of the etched copper is different from that of the step etching of the invention.
A copper-clad ceramic substrate step etching method mainly comprises the following steps:
s1, preparing a step etching solution: according to the mass percentage, the Sancy701A is 5%, the hydrogen peroxide is 45%, and the pure water is 50%;
s2, heating the step etching solution: heating to 40 ℃ and continuously reducing the temperature in a gradient way;
s3, soaking: soaking the substrate in an etching solution;
s4, removing copper oxide: washing the substrate, and then putting the substrate into a pickling solution to remove surface copper oxide;
s5, cleaning: and cleaning the residual liquid medicine of the substrate by using a water washing tank.
Wherein the polishing solution Sancy701A was mixed with the following components in pure water, as referred to in the following table:
firstly preparing a step etching solution
The configuration method comprises the following steps: mixing 5 mass parts of Sancy701A, 45 mass parts of hydrogen peroxide and 50 mass parts of pure water according to the proportion, and uniformly stirring;
then independently preparing a proper amount of single pickling solution and two rinsing baths with the concentration of 5 percent;
then heating the step etching solution to 40 ℃ and preserving heat;
soaking the substrate in the etching solution for 30s, cooling the etching solution to 35 ℃, keeping the temperature for 30s, and continuously keeping the temperature for cooling according to the method, wherein in the process, the substrate is soaked in the etching solution in a standing or shaking way; the whole soaking time lasts for 3-4min;
then putting the soaked substrate into a water tank to be washed clean;
putting the rinsed substrate into a pickling solution, and completely cleaning the copper oxide on the surface;
and then cleaning the residual liquid medicine of the substrate by using a water washing tank.
And then measuring the step etching thickness and the roughness of the substrate and observing the glossiness of the crystal grains on the surface of the copper.
The comparison is better, and the existing process called in the following table is to prepare the ceramic copper-clad substrate by adopting a common hydrogen peroxide etching system through the steps of primary etching, water washing, acid washing, water washing, secondary etching, water washing, acid washing, tertiary etching, water washing and taking out of a solder, and measure the steps;
the inventive process referred to in the following table refers to a ceramic copper-clad substrate produced by using the process steps of the present invention, and this was measured.
The process categories in the following tables refer to the substrate produced by the existing process and the substrate produced by the process of the present invention, 6 substrates were randomly taken to measure the surface roughness, and the roughness measurement results were as follows:
visual inspection of the substrate (small pieces 1 and 2 described in the table refer to substrates made by the manufacturing method of the present invention):
and the copper reduction amount of the substrate in different etching states:
and referring to fig. 1 and 2, as is evident from fig. 1, the substrate copper surface grain gaps of the present invention are smaller than those of the prior art; FIG. 2 shows that the substrate produced by the process of the present invention has smoother grains and smaller grain boundary gaps.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and all technical solutions that belong to the idea of the present invention belong to the scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (6)
1. A copper-clad ceramic substrate step etching method is characterized by comprising the following steps:
s1, preparing a step etching solution: the water-based paint comprises 5% of Sancy701A, 45% of hydrogen peroxide and 50% of pure water in percentage by mass;
s2, heating the step etching solution: heating to 40 ℃ and preserving heat;
s3, soaking: soaking the substrate in etching solution, and simultaneously carrying out gradient cooling on the step etching solution;
s4, removing copper oxide: washing the substrate, and then putting the substrate into a pickling solution to remove surface copper oxide;
s5, cleaning: washing residual liquid medicine of the substrate by using a washing tank;
wherein the Sancy701A consists of C12-C15 fatty alcohol-polyoxyethylene 7 ether, a copper corrosion inhibitor, sulfuric acid isopropanol and pure water.
2. The copper-clad ceramic substrate step etching method according to claim 1, characterized in that: wherein the mass percent of the C12-C15 fatty alcohol polyoxyethylene 7 ether is 3-15%; the mass percentage of the copper corrosion inhibitor is 0.5-2%; the mass percent of the sulfuric acid is 15-33%; 18-40% of isopropanol and the balance of pure water.
3. The copper-clad ceramic substrate step etching method according to claim 1, characterized in that: in the step S4, the concentration of the pickling solution is 5%.
4. The copper-clad ceramic substrate step etching method according to claim 1, characterized in that: in the step S3, the soaking time is 3-4min.
5. The copper-clad ceramic substrate step etching method according to claim 4, characterized in that: the soaking mode is standing or shaking.
6. The method for etching a step of a copper-clad ceramic substrate according to claim 1, wherein: in the step S3, the gradient cooling is set to be carried out for 30S every 5 ℃ until the etching is finished.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4430990B2 (en) * | 2004-06-29 | 2010-03-10 | 株式会社荏原電産 | Circuit forming etchant for semi-additive method |
| CN101952484B (en) * | 2008-02-12 | 2014-05-07 | 三菱制纸株式会社 | Etching method |
| JP4864949B2 (en) * | 2008-09-12 | 2012-02-01 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| KR101256276B1 (en) * | 2010-08-25 | 2013-04-18 | 플란제 에스이 | Etchant composition for etching a conductive multi-layer film and etching method using the same |
| CN105338751B (en) * | 2014-08-12 | 2018-02-02 | 鹏鼎控股(深圳)股份有限公司 | Circuit board and preparation method thereof |
| CN109136931A (en) * | 2018-08-31 | 2019-01-04 | 深圳市华星光电技术有限公司 | A kind of high-efficiency copper molybdenum etching liquid and engraving method |
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