JP4430718B2 - Atomic layer deposition system - Google Patents

Atomic layer deposition system Download PDF

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JP4430718B2
JP4430718B2 JP2008074544A JP2008074544A JP4430718B2 JP 4430718 B2 JP4430718 B2 JP 4430718B2 JP 2008074544 A JP2008074544 A JP 2008074544A JP 2008074544 A JP2008074544 A JP 2008074544A JP 4430718 B2 JP4430718 B2 JP 4430718B2
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film forming
film
forming chamber
measuring means
monitor
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JP2009228059A (en
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和俊 村田
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Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
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Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
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Priority to JP2008074544A priority Critical patent/JP4430718B2/en
Priority to KR1020107021219A priority patent/KR20100119807A/en
Priority to US12/933,677 priority patent/US20110017135A1/en
Priority to PCT/JP2009/055297 priority patent/WO2009116576A1/en
Priority to EP09723417A priority patent/EP2267183A4/en
Priority to TW098109130A priority patent/TW200951245A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Description

本発明は、原子層および分子層単位で薄膜の形成が可能な原子層成膜装置に関する。   The present invention relates to an atomic layer deposition apparatus capable of forming a thin film in units of atomic layers and molecular layers.

近年、３００℃以下の低温で良質な薄膜がより均質な状態で形成可能であるなどの種々の特徴を備える技術として、原子層および分子層単位で薄膜の形成が可能な原子層成長（Atomic Layer Deposition：ＡＬＤ）法が、注目されている。原子層成長法は、形成しようとする膜を構成する各元素の原料を基板に交互に供給することにより、原子層単位で薄膜を形成する技術である。原子層成長法では、各元素の原料を供給している間に１層あるいはｎ層（ｎは２以上の整数）だけを表面に吸着させ、余分な原料は成長に寄与させないようにしている。これを、成長の自己停止作用という。原子層成長法によれば、一般的なＣＶＤに比較して極めて優れた形状適応性と膜厚制御性を併せ持っており、より低温でより広い面積に対して均一な薄膜を再現性よく形成できる技術として、大画面のフラットパネルディスプレイ製造への適用が検討されている。   In recent years, atomic layer growth (atomic layer capable of forming thin films in atomic layer and molecular layer units) is a technology with various features such as the ability to form high-quality thin films in a more homogeneous state at low temperatures of 300 ° C or lower. The Deposition (ALD) method has attracted attention. The atomic layer growth method is a technique for forming a thin film in units of atomic layers by alternately supplying a raw material of each element constituting a film to be formed to a substrate. In the atomic layer growth method, only one layer or n layer (n is an integer of 2 or more) is adsorbed on the surface while the raw materials for each element are supplied, and excess raw materials are prevented from contributing to growth. This is called self-stopping action of growth. The atomic layer growth method has extremely excellent shape adaptability and film thickness controllability compared to general CVD, and can form a uniform thin film with a high reproducibility over a wider area at a lower temperature. As a technology, application to the production of large-screen flat panel displays is being studied.

大型化に対応する原子層成長装置としては、１辺が数十ｃｍを越える矩形の基板が対象となるため、基板に平行にガスを供給する横型の装置が提案されている。横型の装置では、よく知られているように、基板に平行にガスを供給しており、装置の構成が単純であり、基板の大型化に適用しやすい構成となっている。また、原子層成長法は、前述したように成長の自己停止作用を備えており、他の化学的気相成長法に比較し、形成される膜の状態が供給されるガスの分布にあまり影響をされない。このため、基板の大型化に伴い、ガスの供給口からの距離が大きく異なる状態となっていても、基板全域に対して均一な膜の形成が期待できる。   As an atomic layer growth apparatus corresponding to an increase in size, since a rectangular substrate having a side of several tens of centimeters is targeted, a horizontal apparatus for supplying gas in parallel to the substrate has been proposed. As is well known, in a horizontal apparatus, gas is supplied in parallel to the substrate, the structure of the apparatus is simple, and the structure is easy to apply to an increase in the size of the substrate. In addition, as described above, the atomic layer growth method has a self-stopping action of growth, and compared with other chemical vapor deposition methods, the state of the formed film has less influence on the distribution of the supplied gas. Not be. For this reason, even when the distance from the gas supply port is greatly different with the increase in size of the substrate, a uniform film can be expected to be formed over the entire area of the substrate.

特開２００７−１５７８８５号公報JP 2007-157885 A

ところが、上述した横型の薄膜形成装置で原子層成長を行う場合であっても、基板のガスの流れる中心領域と、この領域より離れる基板端部の領域とで、膜の状態に分布が発生することなどのことが、発明者らにより確認されている。この分布は、基板の大型化でより顕著となってきている。これを解消するために、ガスの供給口を増やして一方の側部のより広い領域よりガスを供給する構成とし、ガスが均一に供給される状態として不均一を解消しようとする技術がある（例えば特許文献１参照）。   However, even when atomic layer growth is performed by the above-described horizontal thin film forming apparatus, distribution occurs in the film state in the central region where the gas of the substrate flows and the region at the end of the substrate that is far from this region. This has been confirmed by the inventors. This distribution has become more prominent with an increase in the size of the substrate. In order to solve this, there is a technique for increasing the gas supply port to supply gas from a wider area on one side, and trying to eliminate non-uniformity as a state where the gas is uniformly supplied ( For example, see Patent Document 1).

しかしながら、複数のガス供給口を用い、これらより均一にガスを供給（噴出）しても、均一性が確保されない場合が発生することが、発明者らにより確認された。このように、従来の技術では、複数のガス供給口を用いても、必ずしも均一性が確保できないという問題があった。   However, the inventors have confirmed that even when a plurality of gas supply ports are used and gas is supplied (spouted) more uniformly than these, uniformity may not be ensured. As described above, the conventional technique has a problem that uniformity cannot always be ensured even if a plurality of gas supply ports are used.

本発明は、以上のような問題点を解消するためになされたものであり、複数のガス供給口を用いた状態において、よりガスの均一性が確保できるようにすることを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to ensure more uniform gas in a state where a plurality of gas supply ports are used.

本発明に係る原子層成膜装置は、薄膜対象の基板が配置される成膜室と、基板に薄膜を形成するための原料を少なくとも含むガスを成膜室の第１側部の側より成膜室に供給するための複数のガス供給配管と、ガス供給配管の各々に設けられた複数のバルブと、成膜室の第１側部に対向する第２側部の側より成膜室の内部を排気するための排気配管と、成膜室の内部に配置されて基板の上における成膜室内の状態を測定する成膜室状態測定手段と、この成膜室状態測定手段が測定した結果をもとにバルブの開度または開放時間を個別に制御する制御手段とを少なくとも備えるものである。   The atomic layer deposition apparatus according to the present invention includes a deposition chamber in which a substrate to be thinned is disposed, and a gas containing at least a raw material for forming a thin film on the substrate from a first side portion side of the deposition chamber. A plurality of gas supply pipes for supplying to the film chamber, a plurality of valves provided in each of the gas supply pipes, and a second side portion facing the first side portion of the film formation chamber from the side of the film formation chamber Exhaust piping for exhausting the inside, a film forming chamber state measuring unit that is disposed inside the film forming chamber and measures the state of the film forming chamber on the substrate, and a result of measurement by the film forming chamber state measuring unit And at least control means for individually controlling the opening degree or opening time of the valve.

上記原子層成膜装置において、複数の排気配管を備え、排気配管の各々に設けられて排気配管内の状態を測定する複数の排気配管内状態測定手段を備え、制御手段は、成膜室状態測定手段が測定した結果に加え、排気配管内状態測定手段が測定した結果をもとにバルブの開度または開放時間を個別に制御する。   The atomic layer deposition apparatus includes a plurality of exhaust pipes, a plurality of exhaust pipe state measuring means provided in each of the exhaust pipes for measuring the state in the exhaust pipe, and the control means includes a film forming chamber state In addition to the results measured by the measuring means, the valve opening or opening time is individually controlled based on the results measured by the exhaust pipe state measuring means.

上記原子層成膜装置において、成膜室状態測定手段は、成膜室内の基板の上を流れるガスの量を測定するガス量測定手段，薄膜の膜厚を測定する膜厚測定手段、薄膜の屈折率を測定する屈折率測定手段、および基板上に発生する異物の状態を測定する異物測定手段の少なくとも１つである。また、排気配管内状態測定手段は、排気配管に流れるガスの量を測定するガス量測定手段である。   In the atomic layer film forming apparatus, the film forming chamber state measuring means includes a gas amount measuring means for measuring the amount of gas flowing over the substrate in the film forming chamber, a film thickness measuring means for measuring the film thickness of the thin film, It is at least one of a refractive index measuring unit that measures the refractive index and a foreign matter measuring unit that measures the state of the foreign matter generated on the substrate. Further, the exhaust pipe internal state measuring means is a gas amount measuring means for measuring the amount of gas flowing through the exhaust pipe.

以上説明したように、本発明によれば、成膜室の内部に配置されて基板の上における成膜室内の状態を測定する成膜室状態測定手段が測定した結果をもとに、制御手段が各バルブの開度または開放時間を個別に制御するようにしたので、複数のガス供給口を用いた状態において、よりガスの均一性が確保できるようになるという優れた効果が得られる。   As described above, according to the present invention, the control means is based on the result measured by the film forming chamber state measuring means that is disposed inside the film forming chamber and measures the state of the film forming chamber on the substrate. However, since the opening or opening time of each valve is individually controlled, an excellent effect can be obtained in that the gas uniformity can be ensured in a state where a plurality of gas supply ports are used.

以下、本発明の実施の形態について図を参照して説明する。図１は、本発明の実施の形態における原子層成膜装置の構成を示す構成図である。図１は、本実施の形態における原子層成膜装置を平面視したものである。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing a configuration of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 1 is a plan view of an atomic layer deposition apparatus in the present embodiment.

本実施の形態における原子層成膜装置は、まず、原料ガスやオゾンガスなどの酸化ガスが導入されて薄膜形成対象の基板Ｗ上に薄膜形成を行う成膜室１０１と、薄膜を形成するための原料を含むガスを、成膜室１０１の一方の側部（第１側部）より成膜室１０１の領域に対して供給するためのガス供給配管１２１，ガス供給配管１２２，およびガス供給配管１２３と、ガス供給配管１２１，ガス供給配管１２２，およびガス供給配管１２３に設けられたバルブ１３１，バルブ１３２，およびバルブ１３３とを備える。   The atomic layer deposition apparatus according to the present embodiment first includes a deposition chamber 101 in which an oxidizing gas such as a source gas or ozone gas is introduced to form a thin film on a substrate W on which a thin film is to be formed, and a thin film for forming the thin film. A gas supply pipe 121, a gas supply pipe 122, and a gas supply pipe 123 for supplying a gas containing a raw material from one side (first side) of the film formation chamber 101 to the region of the film formation chamber 101. And a valve 131, a valve 132, and a valve 133 provided in the gas supply pipe 121, the gas supply pipe 122, and the gas supply pipe 123.

なお、図示していないが、ガス供給配管１２１，ガス供給配管１２２，およびガス供給配管１２３には、よく知られているように、液体原料を気化する気化器などを含むガス供給機構が接続し、トリメチルアルミニウム（ＴＭＡ）などの原料ガスやオゾンなどの酸化ガス、また、アルゴン（Ａｒ）などのパージガスが供給可能とされている。   Although not shown, a gas supply mechanism including a vaporizer for vaporizing the liquid material is connected to the gas supply pipe 121, the gas supply pipe 122, and the gas supply pipe 123, as is well known. A source gas such as trimethylaluminum (TMA), an oxidizing gas such as ozone, and a purge gas such as argon (Ar) can be supplied.

また、本実施の形態における原子層成膜装置は、成膜室１０１の内部に配置された成膜室モニター（成膜室状態測定手段）１４１，成膜室モニター１４２，成膜室モニター１４３，成膜室モニター１４４，成膜室モニター１４５，成膜室モニター１４６，成膜室モニター１４７，成膜室モニター１４８，および成膜室モニター１４９を備える。   In addition, the atomic layer deposition apparatus in this embodiment includes a deposition chamber monitor (deposition chamber state measuring unit) 141, a deposition chamber monitor 142, a deposition chamber monitor 143, which are disposed inside the deposition chamber 101. A deposition chamber monitor 144, a deposition chamber monitor 145, a deposition chamber monitor 146, a deposition chamber monitor 147, a deposition chamber monitor 148, and a deposition chamber monitor 149 are provided.

また、本実施の形態における原子層成膜装置は、成膜室１０１の他方の側部（第２側部）より成膜室１０１の内部を排気するための排気配管１５１および排気配管１５２と、排気配管１５１および排気配管１５２の途中に設けられた排気配管モニター１６１および排気配管モニター１６２とを備える。なお、図示していないが、よく知られているように、排気配管１５１および排気配管１５２には、ドライポンプなどの排気機構が接続され、これらにより成膜室１０１の内部の排気を可能としている。ここで、ガス供給配管１２１，ガス供給配管１２２，ガス供給配管１２３よりなる一連のガス供給部１０２と、排気配管１５１および排気配管１５２よりなる一連の排気部１０５は、成膜室１０１内で対向して配置されている。   In addition, the atomic layer deposition apparatus in this embodiment includes an exhaust pipe 151 and an exhaust pipe 152 for exhausting the inside of the film formation chamber 101 from the other side (second side) of the film formation chamber 101, An exhaust pipe monitor 161 and an exhaust pipe monitor 162 provided in the middle of the exhaust pipe 151 and the exhaust pipe 152 are provided. Although not shown, as is well known, an exhaust mechanism such as a dry pump is connected to the exhaust pipe 151 and the exhaust pipe 152, thereby enabling the exhaust of the inside of the film forming chamber 101. . Here, a series of gas supply sections 102 including a gas supply pipe 121, a gas supply pipe 122, and a gas supply pipe 123 and a series of exhaust sections 105 including an exhaust pipe 151 and an exhaust pipe 152 are opposed to each other in the film forming chamber 101. Are arranged.

加えて、本実施の形態における原子層成膜装置は、成膜室モニター１４１，成膜室モニター１４２，成膜室モニター１４３，成膜室モニター１４４，成膜室モニター１４５，成膜室モニター１４６，成膜室モニター１４７，成膜室モニター１４８，成膜室モニター１４９，排気配管モニター１６１，および排気配管モニター１６２が測定した結果により、バルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を各々個別に制御する制御部１０７を備える。   In addition, the atomic layer deposition apparatus in this embodiment includes a deposition chamber monitor 141, a deposition chamber monitor 142, a deposition chamber monitor 143, a deposition chamber monitor 144, a deposition chamber monitor 145, and a deposition chamber monitor 146. , The opening or opening time of the valve 131, the valve 132, and the valve 133 according to the results measured by the film forming chamber monitor 147, the film forming chamber monitor 148, the film forming chamber monitor 149, the exhaust pipe monitor 161, and the exhaust pipe monitor 162. Are provided with a control unit 107 for individually controlling the above.

ここで、成膜室１０１の内部において、各成膜室モニターは、例えば、図２に示すように、成膜室１０１の内部において、基板Ｗの上の天井１０１ａの部分に配置されている。図２は、本実施の形態における原子層成膜装置を断面視したものである。また、成膜室モニター１４１，成膜室モニター１４２，成膜室モニター１４３は、成膜室１０１内のガス供給部１０２の側に配置されている。また、成膜室モニター１４７，成膜室モニター１４８，成膜室モニター１４９は、成膜室１０１内の排気部１０５の側に配置されている。また、成膜室モニター１４４，成膜室モニター１４５，成膜室モニター１４６は、成膜室内のガス供給側と排気側との中間位置に配置されている。   Here, in the film forming chamber 101, each film forming chamber monitor is disposed in a portion of the ceiling 101a on the substrate W in the film forming chamber 101, for example, as shown in FIG. FIG. 2 is a cross-sectional view of the atomic layer deposition apparatus in the present embodiment. The film formation chamber monitor 141, the film formation chamber monitor 142, and the film formation chamber monitor 143 are arranged on the gas supply unit 102 side in the film formation chamber 101. Further, the film formation chamber monitor 147, the film formation chamber monitor 148, and the film formation chamber monitor 149 are arranged on the exhaust unit 105 side in the film formation chamber 101. The film formation chamber monitor 144, the film formation chamber monitor 145, and the film formation chamber monitor 146 are arranged at an intermediate position between the gas supply side and the exhaust side in the film formation chamber.

また、成膜室モニター１４１，成膜室モニター１４４，成膜室モニター１４７は、ガス供給側から排気側へのガスの流れ方向の例えば左側（左列）に配列され、成膜室モニター１４２，成膜室モニター１４５，成膜室モニター１４８は、ガス供給側から排気側へのガスの流れ方向の中央部（中央列）に配列され、成膜室モニター１４３，成膜室モニター１４６，成膜室モニター１４９は、ガス供給側から排気側へのガスの流れ方向の右側（右列）に配列されている。従って、成膜室１０１の内部では、この天井に、３行３列に配列された９個の成膜室モニターが配置され、基板Ｗに形成される薄膜を含めて基板Ｗの上における成膜室１０１の内部の状態をモニター可能としている。   The film formation chamber monitor 141, the film formation chamber monitor 144, and the film formation chamber monitor 147 are arranged, for example, on the left side (left column) in the gas flow direction from the gas supply side to the exhaust side. The film formation chamber monitor 145 and the film formation chamber monitor 148 are arranged at the center (center row) in the gas flow direction from the gas supply side to the exhaust side, and the film formation chamber monitor 143, film formation chamber monitor 146, and film formation The chamber monitor 149 is arranged on the right side (right column) in the gas flow direction from the gas supply side to the exhaust side. Therefore, in the film forming chamber 101, nine film forming chamber monitors arranged in 3 rows and 3 columns are arranged on this ceiling, and the film forming on the substrate W including the thin film formed on the substrate W is performed. The state inside the chamber 101 can be monitored.

また、排気配管モニター１６１は、排気配管１５１内の状態を測定し、排気配管モニター１６２は、排気配管１５２内の状態を測定する。   The exhaust pipe monitor 161 measures the state in the exhaust pipe 151, and the exhaust pipe monitor 162 measures the state in the exhaust pipe 152.

ここで、成膜室モニターは、例えば、水晶発振式のモニター（例えば、株式会社アルバック製水晶発振式膜厚モニターＣＲＴＭ−９０００）である。このモニターによれば、水晶振動子からなる検出部に基板Ｗの上と同様に堆積する膜の質量を測定可能であり、測定した質量により膜厚が測定可能である（膜厚測定手段）。なお、このモニターは、モニターの配置場所に流れるガスの量が間接的に測定されることにもなる（ガス量測定手段）。   Here, the film formation chamber monitor is, for example, a crystal oscillation type monitor (for example, a quartz oscillation type film thickness monitor CRTM-9000 manufactured by ULVAC, Inc.). According to this monitor, it is possible to measure the mass of the film deposited on the detection unit made of a crystal resonator in the same manner as on the substrate W, and the film thickness can be measured by the measured mass (film thickness measuring means). This monitor also indirectly measures the amount of gas flowing to the monitor location (gas amount measuring means).

このような成膜室モニター１４１〜１４９を備えた本実施の形態における原子層成膜装置によれば、成膜室１０１において基板Ｗの上に形成される薄膜と同様の薄膜が検出部に形成されるようになるため、基板Ｗの上に形成される薄膜の膜厚を間接的に測定することができる。従って、成膜室モニター１４１〜１４９により、基板Ｗの上に形成される薄膜の膜厚の分布が間接的に測定されることになる。また、成膜室モニター１４１〜１４９により、基板Ｗの上に流れるガスの量の分布が間接的に測定されることになる。   According to the atomic layer deposition apparatus in the present embodiment provided with such deposition chamber monitors 141 to 149, a thin film similar to the thin film formed on the substrate W in the deposition chamber 101 is formed in the detection unit. Therefore, the film thickness of the thin film formed on the substrate W can be indirectly measured. Therefore, the film thickness distribution of the thin film formed on the substrate W is indirectly measured by the film forming chamber monitors 141 to 149. Further, the distribution of the amount of gas flowing on the substrate W is indirectly measured by the film forming chamber monitors 141 to 149.

このようにして測定された結果により、制御部１０７は、バルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を個別に制御する。例えば、左列に配列された成膜室モニター１４１，成膜室モニター１４４，成膜室モニター１４７による測定結果（膜厚）が、他の列の成膜モニターにより測定される膜厚より厚い場合、制御部１０７は、バルブ１３１の開度を小さくしまたは開放時間を短くし、ガス供給配管１２１により供給されるガスの量を減少させる。   Based on the measurement result, the control unit 107 individually controls the opening degree or opening time of the valve 131, the valve 132, and the valve 133. For example, when the measurement result (film thickness) by the film formation chamber monitor 141, the film formation chamber monitor 144, and the film formation chamber monitor 147 arranged in the left column is thicker than the film thickness measured by the film formation monitor in the other column The control unit 107 reduces the opening degree of the valve 131 or shortens the opening time, and decreases the amount of gas supplied by the gas supply pipe 121.

また、制御部１０７は、例えば、左列に配列された成膜室モニター１４１，成膜室モニター１４４，成膜室モニター１４７による測定結果（ガス量）が、他の列の成膜モニターにより測定される結果より多い場合、制御部１０７は、バルブ１３１の開度を小さくしまたは開放時間を短くし、ガス供給配管１２１により供給されるガスの量を減少させる。   Further, the control unit 107 measures, for example, the measurement results (gas amount) by the film formation chamber monitor 141, the film formation chamber monitor 144, and the film formation chamber monitor 147 arranged in the left column by the film formation monitors in the other columns. When there are more results, the control unit 107 decreases the opening degree of the valve 131 or shortens the opening time, and decreases the amount of gas supplied by the gas supply pipe 121.

また、成膜室モニターは、例えば、エリプソメータである。エリプソメータによれば、基板Ｗの上に形成される薄膜の膜厚および屈折率が測定可能である（膜厚測定手段）。このような成膜室モニター１４１〜１４９を備えた本実施の形態における原子層成膜装置によれば、成膜室１０１において基板Ｗの上に形成される薄膜の膜厚を直接測定することができる。従って、成膜室モニター１４１〜１４９により、基板Ｗの上に形成される薄膜の膜厚の分布が測定されることになる。   The film formation chamber monitor is, for example, an ellipsometer. According to the ellipsometer, the film thickness and refractive index of the thin film formed on the substrate W can be measured (film thickness measuring means). According to the atomic layer film forming apparatus in the present embodiment provided with such film forming chamber monitors 141 to 149, the film thickness of the thin film formed on the substrate W in the film forming chamber 101 can be directly measured. it can. Therefore, the film thickness distribution of the thin film formed on the substrate W is measured by the film forming chamber monitors 141 to 149.

このようにして測定された結果により、制御部１０７は、バルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を個別に制御する。例えば、左列に配列された成膜室モニター１４１，成膜室モニター１４４，成膜室モニター１４７による測定結果（膜厚）が、他の列の成膜モニターにより測定される膜厚より厚い場合、制御部１０７は、バルブ１３１の開度を小さくしまたは開放時間を短く、ガス供給配管１２１により供給されるガスの量を減少させる。   Based on the measurement result, the control unit 107 individually controls the opening degree or opening time of the valve 131, the valve 132, and the valve 133. For example, when the measurement result (film thickness) by the film formation chamber monitor 141, the film formation chamber monitor 144, and the film formation chamber monitor 147 arranged in the left column is thicker than the film thickness measured by the film formation monitor in the other column The control unit 107 decreases the opening degree of the valve 131 or shortens the opening time, and decreases the amount of gas supplied by the gas supply pipe 121.

また、成膜室モニターは、例えば、基板Ｗの上部空間における発塵の状態を測定するパーティクルモニター（例えば、HACH Ultra Analytics社）である。このような成膜室モニター１４１〜１４９を備えた本実施の形態における原子層成膜装置によれば、成膜室１０１において基板Ｗの上部において発生しているパーティクル（発塵）の状態を測定することができる。発塵の状態は、基板Ｗの上に流れるガスの量に影響され、例えば、必要以上にガスが供給されている領域においては、パーティクルが発生しやすい状態となる。従って、成膜室モニター１４１〜１４９により、基板Ｗの上に流れているガスの分布が間接的に測定されることになる。   The film formation chamber monitor is, for example, a particle monitor (for example, HACH Ultra Analytics) that measures the state of dust generation in the upper space of the substrate W. According to the atomic layer deposition apparatus in the present embodiment provided with such deposition chamber monitors 141 to 149, the state of particles (dust generation) generated on the upper portion of the substrate W in the deposition chamber 101 is measured. can do. The state of dust generation is affected by the amount of gas flowing on the substrate W. For example, in a region where gas is supplied more than necessary, particles are likely to be generated. Therefore, the distribution of the gas flowing on the substrate W is indirectly measured by the film forming chamber monitors 141 to 149.

このようにして測定された結果により、制御部１０７は、バルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を個別に制御する。例えば、左列に配列された成膜室モニター１４１，成膜室モニター１４４，成膜室モニター１４７による測定結果（発塵量）が、他の列の成膜モニターにより測定される発塵量より多い場合、制御部１０７は、バルブ１３１の開度を小さくしまたは開放時間を短くし、ガス供給配管１２１により供給されるガスの量を減少させる。   Based on the measurement result, the control unit 107 individually controls the opening degree or opening time of the valve 131, the valve 132, and the valve 133. For example, the measurement result (dust generation amount) by the film formation chamber monitor 141, the film formation chamber monitor 144, and the film formation chamber monitor 147 arranged in the left column is based on the dust generation amount measured by the film formation monitor in the other column. When there are many, the control part 107 reduces the opening degree of the valve | bulb 131, or shortens opening time, and reduces the quantity of the gas supplied by the gas supply piping 121. FIG.

また、排気配管モニター１６１および排気配管モニター１６２は、例えば、水晶発振式のモニターである。このモニターによれば、前述したように、水晶振動子からなる検出部に基板Ｗの上と同様に堆積する膜の質量を測定可能であり、測定した質量により膜厚が測定可能である。このような排気配管モニター１６１および排気配管モニター１６２を備えた本実施の形態における原子層成膜装置によれば、排気配管１５１および排気配管１５２に流れるガスにより、基板Ｗの上に形成される薄膜と同様の薄膜が検出部に形成されるようになる。従って、排気配管モニター１６１および排気配管モニター１６２により、排気配管１５１および排気配管１５２に流れるガスの量が間接的に測定されることになる（ガス量測定手段）。   The exhaust pipe monitor 161 and the exhaust pipe monitor 162 are, for example, crystal oscillation type monitors. According to this monitor, as described above, it is possible to measure the mass of the film deposited on the detection unit made of the crystal resonator in the same manner as on the substrate W, and the film thickness can be measured by the measured mass. According to the atomic layer deposition apparatus in the present embodiment provided with such an exhaust pipe monitor 161 and an exhaust pipe monitor 162, a thin film formed on the substrate W by the gas flowing through the exhaust pipe 151 and the exhaust pipe 152. The same thin film is formed on the detection unit. Therefore, the amount of gas flowing through the exhaust pipe 151 and the exhaust pipe 152 is indirectly measured by the exhaust pipe monitor 161 and the exhaust pipe monitor 162 (gas amount measuring means).

このようにして測定された結果により、制御部１０７は、バルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を個別に制御する。例えば、排気配管モニター１６１による測定結果（ガス量）が、排気配管モニター１６２により測定される量より多い場合、制御部１０７は、バルブ１３１の開度を小さくしまたは開放時間を短くし、ガス供給配管１２１により供給されるガスの量を減少させる。   Based on the measurement result, the control unit 107 individually controls the opening degree or opening time of the valve 131, the valve 132, and the valve 133. For example, when the measurement result (gas amount) by the exhaust pipe monitor 161 is larger than the amount measured by the exhaust pipe monitor 162, the control unit 107 reduces the opening degree of the valve 131 or shortens the opening time to supply gas. The amount of gas supplied through the pipe 121 is reduced.

以上に説明したように、本実施の形態における原子層成膜装置では、制御部１０７が、成膜室モニター１４１などの成膜室に配置されたモニターにより、基板Ｗの上における成膜室１０１内の状態を測定し、この測定結果をもとにバルブ１３１，バルブ１３２，およびバルブ１３３の開度または開放時間を個別に制御するようにした。例えば、各成膜室モニターの測定結果より、供給されるガスの流れていく方向に対する幅方向の左側において、膜厚が厚く形成されるという分布が確認されると、この左側におけるガスの流量が減少するように、バルブ１３１の開度または開放時間を小さくする。また、右側におけるガスの流量が増加するように、バルブ１３３の開度を大きくしまたは開放時間を長くする。この結果、本実施の形態における原子層成膜装置によれば、成膜室モニターにより測定された成膜室１０１内におけるガスの流量分布や基板Ｗの上に形成される膜厚の分布に対応し、この分布の偏りが解消されるようになる。   As described above, in the atomic layer deposition apparatus according to the present embodiment, the control unit 107 uses the monitor disposed in the deposition chamber such as the deposition chamber monitor 141 to form the deposition chamber 101 on the substrate W. The opening degree or opening time of the valve 131, the valve 132, and the valve 133 is individually controlled based on the measurement result. For example, when the distribution result that the film thickness is formed is confirmed on the left side in the width direction with respect to the flowing direction of the supplied gas from the measurement result of each film forming chamber monitor, the flow rate of the gas on the left side is The opening degree or opening time of the valve 131 is decreased so as to decrease. Further, the opening degree of the valve 133 is increased or the opening time is extended so that the gas flow rate on the right side increases. As a result, according to the atomic layer deposition apparatus in the present embodiment, it corresponds to the distribution of the gas flow rate in the deposition chamber 101 and the distribution of the film thickness formed on the substrate W measured by the deposition chamber monitor. However, this distribution bias is eliminated.

なお、上述では、成膜室１０１の一方の側部（第１側部）に、３つのガス供給配管１２１，ガス供給配管１２２，およびガス供給配管１２３を備えるようにしたが、これに限るものではなく、２つのガス供給配管を設けるようにしてもよく、また、４つ以上のガス供給配管を設けるようにしてもよい。また、上述では、左列，中央列，および右列に、各々３個の成膜室モニターを配置するようにしたが、これに限るものではなく、例えば、各列に１つの成膜室モニターを配置するようにしてもよい。また、左側と右側との２箇所に成膜室モニターを設けるようにしてもよい。また、ガスの流れる方向に平行な４つ以上の複数の列を設定し、これら各列に各々成膜室モニターを配置または配列させるようにしてもよい。   In the above description, the three gas supply pipes 121, the gas supply pipe 122, and the gas supply pipe 123 are provided on one side (first side) of the film forming chamber 101. Instead, two gas supply pipes may be provided, or four or more gas supply pipes may be provided. In the above description, three film forming chamber monitors are arranged in each of the left column, the central column, and the right column. However, the present invention is not limited to this. For example, one film forming chamber monitor is provided for each column. May be arranged. In addition, film formation chamber monitors may be provided at two locations, the left side and the right side. Alternatively, a plurality of four or more rows parallel to the gas flow direction may be set, and a film formation chamber monitor may be arranged or arranged in each of these rows.

また、図３に示すように、成膜室１０１の一方の側部（第１側部）のガス供給部において、成膜室１０１の上下方向に、ガス供給配管１２２ａおよびガス供給配管１２２ｂを設けるなど、複数のガス供給配管を設けるようにしてもよい。例えば、ガス供給配管１２２ａからは酸化ガスが供給され、ガス供給配管１２２ｂからは原料ガスが供給されるようにすればよい。なお、各ガス供給配管１２２ａ，１２２ｂに、各々バルブ１３２ａ，１３２ｂを設ける。同様に、成膜室１０１の他方の側部（第２側部）の排気部において、成膜室１０１の上下方向に、排気配管１５２ａおよび排気配管１５２ｂを設けるなど、複数の排気配管を設けるようにしてもよい。例えば、酸化ガスの排気は排気配管１５２ａで行い、原料ガスの排気は排気配管１５２ｂで行うようにすればよい。   As shown in FIG. 3, a gas supply pipe 122 a and a gas supply pipe 122 b are provided in the vertical direction of the film formation chamber 101 in the gas supply section on one side (first side) of the film formation chamber 101. For example, a plurality of gas supply pipes may be provided. For example, the oxidizing gas may be supplied from the gas supply pipe 122a and the source gas may be supplied from the gas supply pipe 122b. The gas supply pipes 122a and 122b are provided with valves 132a and 132b, respectively. Similarly, a plurality of exhaust pipes such as an exhaust pipe 152 a and an exhaust pipe 152 b are provided in the vertical direction of the film formation chamber 101 in the exhaust portion on the other side (second side) of the film formation chamber 101. It may be. For example, the exhaust gas 152 may be exhausted by the exhaust pipe 152a, and the source gas may be exhausted by the exhaust pipe 152b.

また、制御部１０７の制御により、各排気配管による排気量の制御を各々個別に行うようにしても、上述と同様の効果が得られる。   Further, even if the control of the exhaust amount by each exhaust pipe is individually controlled by the control of the control unit 107, the same effect as described above can be obtained.

本発明の実施の形態における原子層成膜装置の構成を示す構成図である。It is a block diagram which shows the structure of the atomic layer film-forming apparatus in embodiment of this invention. 本発明の実施の形態における原子層成膜装置の構成を示す構成図である。It is a block diagram which shows the structure of the atomic layer film-forming apparatus in embodiment of this invention. 本発明の実施の形態における他の原子層成膜装置の構成を示す構成図である。It is a block diagram which shows the structure of the other atomic layer film-forming apparatus in embodiment of this invention.

符号の説明Explanation of symbols

１０１…成膜室、１０２…ガス供給部、１０５…排気部、１０７…制御部、１２１，１２２，１２３…ガス供給配管、１３１，１３２，１３３…バルブ、１４１，１４２，１４３，１４４，１４５，１４６，１４７，１４８，１４９…成膜室モニター、１５１，１５２…排気配管、１６１，１６２…排気配管モニター。   DESCRIPTION OF SYMBOLS 101 ... Film-forming chamber, 102 ... Gas supply part, 105 ... Exhaust part, 107 ... Control part, 121, 122, 123 ... Gas supply piping, 131, 132, 133 ... Valve, 141, 142, 143, 144, 145 146, 147, 148, 149 ... Deposition chamber monitor, 151, 152 ... Exhaust piping, 161, 162 ... Exhaust piping monitor.

Claims (3)

薄膜対象の基板が配置される成膜室と、
前記基板に薄膜を形成するための原料を少なくとも含むガスを前記成膜室の第１側部の側より前記成膜室に供給するための複数のガス供給配管と、
前記ガス供給配管の各々に設けられた複数のバルブと、
前記成膜室の前記第１側部に対向する第２側部の側より前記成膜室の内部を排気するための複数の排気配管と、
前記成膜室の内部に配置されて前記基板の上における前記成膜室内の状態を測定する成膜室状態測定手段と、
この成膜室状態測定手段が測定した結果をもとに前記バルブの開度または開放時間を個別に制御する制御手段と、
前記排気配管の各々に設けられて前記排気配管内の状態を測定する複数の排気配管内状態測定手段を備え、
前記制御手段は、前記成膜室状態測定手段が測定した結果に加え、前記排気配管内状態測定手段が測定した結果をもとに前記バルブの開度または開放時間を個別に制御する
ことを特徴とする原子層成膜装置。 A film formation chamber in which a thin film target substrate is disposed;
A plurality of gas supply pipes for supplying a gas containing at least a raw material for forming a thin film on the substrate from the first side of the film forming chamber to the film forming chamber;
A plurality of valves provided in each of the gas supply pipes;
A plurality of exhaust pipes for exhausting the inside of the film forming chamber from the side of the second side facing the first side of the film forming chamber;
A film forming chamber state measuring means which is disposed inside the film forming chamber and measures the state of the film forming chamber on the substrate;
Control means for individually controlling the opening degree or opening time of the valve based on the result measured by the film forming chamber state measuring means,
A plurality of exhaust pipe state measuring means provided in each of the exhaust pipes for measuring the state in the exhaust pipe;
The control means individually controls the opening degree or the opening time of the valve based on the result measured by the exhaust pipe state measuring means in addition to the result measured by the film forming chamber state measuring means. An atomic layer deposition apparatus. 請求項１記載の原子層成膜装置において、
前記成膜室状態測定手段は、
前記成膜室内の前記基板の上を流れるガスの量を測定するガス量測定手段，前記薄膜の膜厚を測定する膜厚測定手段、前記薄膜の屈折率を測定する屈折率測定手段、および前記基板上に発生する異物の状態を測定する異物測定手段の少なくとも１つである
ことを特徴とする原子層成膜装置。 The atomic layer deposition apparatus according to claim 1 ,
The film forming chamber state measuring means includes
Gas amount measuring means for measuring the amount of gas flowing over the substrate in the film forming chamber, film thickness measuring means for measuring the film thickness of the thin film, refractive index measuring means for measuring the refractive index of the thin film, and An atomic layer deposition apparatus characterized by being at least one of foreign matter measuring means for measuring the state of foreign matter generated on a substrate. 請求項１または２記載の原子層成膜装置において、
前記排気配管内状態測定手段は、前記排気配管に流れるガスの量を測定するガス量測定手段である
ことを特徴とする原子層成膜装置。 The atomic layer deposition apparatus according to claim 1 or 2 ,
The atomic layer deposition apparatus, wherein the exhaust pipe internal state measuring means is a gas amount measuring means for measuring an amount of gas flowing through the exhaust pipe.
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US12/933,677 US20110017135A1 (en) 2008-03-21 2009-03-18 Tomic layer film forming apparatus
PCT/JP2009/055297 WO2009116576A1 (en) 2008-03-21 2009-03-18 Atomic layer film-forming device
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