JP4426871B2 - Fib/sem複合装置の画像ノイズ除去 - Google Patents
Fib/sem複合装置の画像ノイズ除去 Download PDFInfo
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- JP4426871B2 JP4426871B2 JP2004050465A JP2004050465A JP4426871B2 JP 4426871 B2 JP4426871 B2 JP 4426871B2 JP 2004050465 A JP2004050465 A JP 2004050465A JP 2004050465 A JP2004050465 A JP 2004050465A JP 4426871 B2 JP4426871 B2 JP 4426871B2
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- Prior art keywords
- fib
- sem
- electron beam
- noise
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000010894 electron beam technology Methods 0.000 claims description 50
- 238000001878 scanning electron micrograph Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 101100066398 Caenorhabditis elegans fib-1 gene Proteins 0.000 description 1
- 101100042258 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) sem-1 gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
SEM FIB
(1) 1Dot時間 = 1Line周期
(2) 1Line周期 = 1Line周期
(3) 1Frame周期 = 1Line周期
上記した完全一致の例は(2)に相当する。
3 チャンバー 4 二次電子検出器
5 コンピュータ 6 ディスプレイ
8 FIB電源 9 SEM電源
Claims (3)
- ブランキング電極を備えたFIB照射系、電子ビーム照射系と、二次電子検出器とを備え、前記FIB照射系と前記電子ビーム照射系とは独立してビーム走査するFIB/SEM複合装置を用いて、
FIBで励起した二次電子と電子ビームで励起した二次電子を検出し、その検出レベルを画素の輝度とし前記電子ビームの照射位置に対応させて画像化させたSEM画像のノイズ除去方法において、
前記電子ビームの電流量を前記FIBの電流量の2から3倍とし、
前記電子ビームが1ドットに滞留している時間を前記FIBが1ライン走査する時間と等しくすることにより、FIBブランキング期間ノイズを前記SEM画像から排除するようにしたノイズ除去方法。 - ブランキング電極を備えたFIB照射系、電子ビーム照射系と、二次電子検出器とを備え、前記FIB照射系と前記電子ビーム照射系とは独立してビーム走査するFIB/SEM複合装置を用いて、
FIBで励起した二次電子と電子ビームで励起した二次電子を検出し、その検出レベルを画素の輝度とし前記電子ビームの照射位置に対応させて画像化させたSEM画像のノイズ除去方法において、
前記電子ビームの電流量を前記FIBの電流量の2から3倍とし、
前記SEMの1ライン走査時間を前記FIBの1ライン走査時間と等しくすることにより、FIBブランキング期間ノイズを前記SEM画像から排除するようにしたノイズ除去方法。 - ブランキング電極を備えたFIB照射系、電子ビーム照射系と、二次電子検出器とを備え、前記FIB照射系と前記電子ビーム照射系とは独立してビーム走査するFIB/SEM複合装置を用いて、
FIBで励起した二次電子と電子ビームで励起した二次電子を検出し、その検出レベルを画素の輝度とし前記電子ビームの照射位置に対応させて画像化させたSEM画像のノイズ除去方法において、
前記電子ビームの電流量を前記FIBの電流量の2から3倍とし、
前記SEMの1フレーム走査時間を前記FIBの1ライン走査時間と等しくすることにより、FIBブランキング期間ノイズを前記SEM画像から排除するようにしたノイズ除去方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004050465A JP4426871B2 (ja) | 2004-02-25 | 2004-02-25 | Fib/sem複合装置の画像ノイズ除去 |
US11/059,434 US7173261B2 (en) | 2004-02-25 | 2005-02-16 | Image noise removing method in FIB/SEM complex apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004050465A JP4426871B2 (ja) | 2004-02-25 | 2004-02-25 | Fib/sem複合装置の画像ノイズ除去 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005243368A JP2005243368A (ja) | 2005-09-08 |
JP4426871B2 true JP4426871B2 (ja) | 2010-03-03 |
Family
ID=34858302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004050465A Expired - Lifetime JP4426871B2 (ja) | 2004-02-25 | 2004-02-25 | Fib/sem複合装置の画像ノイズ除去 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7173261B2 (ja) |
JP (1) | JP4426871B2 (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4563049B2 (ja) * | 2004-02-24 | 2010-10-13 | エスアイアイ・ナノテクノロジー株式会社 | Fib−sem複合装置を用いたイオンビーム加工方法 |
JP4431459B2 (ja) * | 2004-07-29 | 2010-03-17 | 株式会社日立ハイテクノロジーズ | 集束イオン・ビーム装置及び集束イオン・ビーム照射方法 |
US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US8041103B2 (en) | 2005-11-18 | 2011-10-18 | Kla-Tencor Technologies Corp. | Methods and systems for determining a position of inspection data in design data space |
US7676077B2 (en) | 2005-11-18 | 2010-03-09 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
JP4851804B2 (ja) * | 2006-02-13 | 2012-01-11 | 株式会社日立ハイテクノロジーズ | 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法 |
US7877722B2 (en) * | 2006-12-19 | 2011-01-25 | Kla-Tencor Corp. | Systems and methods for creating inspection recipes |
US8194968B2 (en) | 2007-01-05 | 2012-06-05 | Kla-Tencor Corp. | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
US8213704B2 (en) | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
US7796804B2 (en) | 2007-07-20 | 2010-09-14 | Kla-Tencor Corp. | Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer |
TWI469235B (zh) | 2007-08-20 | 2015-01-11 | Kla Tencor Corp | 決定實際缺陷是潛在系統性缺陷或潛在隨機缺陷之由電腦實施之方法 |
US8078997B2 (en) * | 2007-12-28 | 2011-12-13 | Cadence Design Systems, Inc. | Method, system, and computer program product for implementing a direct measurement model for an electronic circuit design |
US8090183B2 (en) * | 2009-03-12 | 2012-01-03 | Visiongate, Inc. | Pattern noise correction for pseudo projections |
US8139844B2 (en) | 2008-04-14 | 2012-03-20 | Kla-Tencor Corp. | Methods and systems for determining a defect criticality index for defects on wafers |
JP5274897B2 (ja) * | 2008-06-04 | 2013-08-28 | 日本電子株式会社 | 断面観察用走査電子顕微鏡 |
WO2010014609A2 (en) | 2008-07-28 | 2010-02-04 | Kla-Tencor Corporation | Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer |
US8775101B2 (en) | 2009-02-13 | 2014-07-08 | Kla-Tencor Corp. | Detecting defects on a wafer |
US8204297B1 (en) | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
US8112241B2 (en) | 2009-03-13 | 2012-02-07 | Kla-Tencor Corp. | Methods and systems for generating an inspection process for a wafer |
US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US9087367B2 (en) | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
US8831334B2 (en) | 2012-01-20 | 2014-09-09 | Kla-Tencor Corp. | Segmentation for wafer inspection |
US8826200B2 (en) | 2012-05-25 | 2014-09-02 | Kla-Tencor Corp. | Alteration for wafer inspection |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US9053527B2 (en) | 2013-01-02 | 2015-06-09 | Kla-Tencor Corp. | Detecting defects on a wafer |
US9134254B2 (en) | 2013-01-07 | 2015-09-15 | Kla-Tencor Corp. | Determining a position of inspection system output in design data space |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
CN104956461B (zh) * | 2013-01-31 | 2016-10-19 | 株式会社日立高新技术 | 复合带电粒子检测器、带电粒子束装置以及带电粒子检测器 |
WO2014149197A1 (en) | 2013-02-01 | 2014-09-25 | Kla-Tencor Corporation | Detecting defects on a wafer using defect-specific and multi-channel information |
US9865512B2 (en) | 2013-04-08 | 2018-01-09 | Kla-Tencor Corp. | Dynamic design attributes for wafer inspection |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
JP6298601B2 (ja) * | 2013-07-12 | 2018-03-20 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
US11069054B2 (en) | 2015-12-30 | 2021-07-20 | Visiongate, Inc. | System and method for automated detection and monitoring of dysplasia and administration of immunotherapy and chemotherapy |
JP7165633B2 (ja) * | 2019-08-27 | 2022-11-04 | 株式会社日立ハイテク | 荷電粒子ビーム制御装置 |
US11101105B1 (en) * | 2020-05-28 | 2021-08-24 | Applied Materials Israel Ltd. | Noise reduction of a high voltage supply voltage |
US11756285B2 (en) | 2021-06-10 | 2023-09-12 | Bank Of America Corporation | Image processing system and method for image noise removal |
Family Cites Families (14)
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JPH02121252A (ja) * | 1988-10-28 | 1990-05-09 | Jeol Ltd | 荷電粒子ビーム複合装置 |
US5111043A (en) * | 1990-01-10 | 1992-05-05 | Hitachi, Ltd. | Apparatus for material surface observation |
JPH0676781A (ja) * | 1992-08-27 | 1994-03-18 | Yokogawa Electric Corp | イオンビーム走査画像の取得方法、および集束イオンビーム装置 |
JP3153391B2 (ja) * | 1993-07-07 | 2001-04-09 | 株式会社日立製作所 | 集束イオンビーム装置 |
JPH07230784A (ja) * | 1994-02-16 | 1995-08-29 | Jeol Ltd | 複合荷電粒子ビーム装置 |
JP3221797B2 (ja) * | 1994-06-14 | 2001-10-22 | 株式会社日立製作所 | 試料作成方法及びその装置 |
JPH09161712A (ja) * | 1995-12-12 | 1997-06-20 | Hitachi Ltd | イオンビームによる試料加工装置 |
JPH09274883A (ja) * | 1996-04-03 | 1997-10-21 | Hitachi Ltd | Fib/sem複合装置 |
JPH11317434A (ja) * | 1999-02-08 | 1999-11-16 | Seiko Instruments Inc | 断面加工像観察方法 |
JP3805565B2 (ja) * | 1999-06-11 | 2006-08-02 | 株式会社日立製作所 | 電子線画像に基づく検査または計測方法およびその装置 |
JP3897271B2 (ja) * | 1999-09-17 | 2007-03-22 | 株式会社日立製作所 | 加工観察装置及び試料加工方法 |
JP2001167726A (ja) * | 1999-12-09 | 2001-06-22 | Jeol Ltd | 仕事関数像生成装置 |
JP2004510295A (ja) * | 2000-09-20 | 2004-04-02 | エフ・イ−・アイ・カンパニー | 荷電粒子ビームシステムにおける同時の映像化と照射のためのリアルタイムモニタリング |
JP2004209626A (ja) * | 2002-11-14 | 2004-07-29 | Seiko Instruments Inc | 3次元微細構造体作製方法および作製装置 |
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2004
- 2004-02-25 JP JP2004050465A patent/JP4426871B2/ja not_active Expired - Lifetime
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2005
- 2005-02-16 US US11/059,434 patent/US7173261B2/en active Active
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US7173261B2 (en) | 2007-02-06 |
JP2005243368A (ja) | 2005-09-08 |
US20050184252A1 (en) | 2005-08-25 |
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