JP4356263B2 - Power converter - Google Patents

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JP4356263B2
JP4356263B2 JP2001123522A JP2001123522A JP4356263B2 JP 4356263 B2 JP4356263 B2 JP 4356263B2 JP 2001123522 A JP2001123522 A JP 2001123522A JP 2001123522 A JP2001123522 A JP 2001123522A JP 4356263 B2 JP4356263 B2 JP 4356263B2
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conductor
semiconductor switch
module element
load
terminal
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JP2002320381A (en
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浩二 日野
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Fuji Electric Co Ltd
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Fuji Electric Systems Co Ltd
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Description

【０００１】
【発明の属する技術分野】
本発明は、直流電源からチョッパ回路により任意の直流電力を取り出す直流−直流電力変換装置に係り、特に自己消弧型の半導体スイッチを用いたチョッパ回路に好適な電力変換装置に関する。
【０００２】
【従来の技術】
図２（ａ）は降圧チョッパ回路の概略を示す回路図、図２（ｂ）はその負荷電流の波形図である。図２（ａ）で、半導体スイッチ１２をオンすると、直流電源１１から負荷１５へ供給される電流Ｉcは、直流リアクトル１４があるため徐々 に増加する。次に、半導体スイッチ１２をオフにすると、直流リアクトル１４に蓄えられたエネルギーにより、フリーホイリングダイオード１３を通じて負荷１５へ電流Ｉfが流れる。負荷１５に流れる負荷電流は、図２（ｂ）に示すようにΔＩだけ変動を繰り返す。
【０００３】
ここで例えば、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）のような自己消弧型の半導体スイッチを半導体スイッチ１２として用いたとき、半導体スイッチ１２がオンからオフへ切り替わる電流遮断時に、半導体スイッチ１２の端子間電圧Ｖsが跳ね上がる現象が発生する。この半導体スイッチ１２の電流遮断時の 跳ね上がり電圧の大きさは、直流電源１１から半導体スイッチ１２までのインダクタンスの大きさに比例する。跳ね上がり電圧が過大になると半導体スイッチ１２が過電圧で破壊される恐れがあるため、通常は、コンデンサを主体とするスナバ回路を付加して跳ね上がり電圧を吸収している。
【０００４】
図３は、降圧チョッパ回路を有する従来の電力変換装置の主回路の構成図である。チョッパ回路の半導体スイッチ１２及びフリーホイリングダイオード１３は、モジュール素子１内に構成されている。モジュール素子１の各端子は、それぞれＰ側引き出し導体３１，Ｎ側引き出し導体３２，出力引き出し導体３３を介してＰ側共通導体４１，Ｎ側共通導体４２，出力共通導体４３へ接続されている。なお、図３では１つのモジュール素子１のみが示されているが、複数のモジュール素子が同様にして、Ｐ側引き出し導体３１，Ｎ側引き出し導体３２，出力引き出し導体３３を介してＰ側共通導体４１，Ｎ側共通導体４２，出力共通導体４３へ接続される。
【０００５】
直流電源１１に接続されたＰ側共通導体４１及びＮ側共通導体４２は、コンデンサ等の付加回路の組立性を考慮して、モジュール素子１の端子面と直交する方向に並べられている。そして、Ｐ側引き出し導体３１及びＮ側引き出し導体３２は、モジュール素子１の各端子からＰ側共通導体４１及びＮ側共通導体４２までの距離を最短にするように斜めに構成されており、これによりインダクタンスを低減して半導体スイッチ１２の電流遮断時の跳ね上がり電圧を抑制している。
【０００６】
【発明が解決しようとする課題】
図４は、降圧チョッパ回路を有する従来の電力変換装置の主回路に発生する磁束変化の説明図である。降圧チョッパ回路の負荷電流がΔＩだけ変動を繰り返すため、出力引き出し導体３３の図４（ａ），図４（ｂ）に破線矢印で示した電流変化ΔＩに比例して、出力引き出し導体３３の周りに磁束φCが発生する。この 磁束φCがモジュール素子１の設置された金属筐体２に鎖交すると、金属筐体２ には鎖交磁束を打ち消すために渦電流が流れ、金属抵抗による渦電流損で誘導加熱が発生する。この金属筐体２に発生する誘導加熱は、電力変換装置が大容量化して負荷電流が大きくなる程顕著となる。
従来、金属筐体の誘導加熱の対策としては、抵抗の低いアルミニウム等の非磁性金属の使用や、磁気シールド等が試行されていた。
【０００７】
本発明は、金属筐体に発生する誘導加熱を抑制することを目的とする。
本発明はまた、半導体スイッチの電流遮断時の跳ね上がり電圧を抑制することを目的とする。
【０００８】
【課題を解決するための手段】
本発明に係る電力変換装置は、自己消弧型の半導体スイッチとフリーホイリングダイオードとを含むチョッパ回路を備え、半導体スイッチ及びフリーホイリングダイオードを金属筐体に設置されたモジュール素子内に構成し、このモジュール素子の端子面に，半導体スイッチの入力側と接続されている第１の端子と，フリーホイリングダイオードのアノード側と接続されている第２の端子と，半導体スイッチの出力側及びフリーホイリングダイオードのカソード側の両方と接続されている第３の端子とを設け、直流電源の正極側とモジュール素子の第１の端子とを接続する第１の導体と、負荷と直流電源の負極側とを接続する第１の経路と、負荷とモジュール素子の第２の端子とを接続する第２の経路とを有する第２の導体と、モジュール素子の第３の端子と負荷側とを接続する第３の導体とを備え、前記第１，第２および第３の各端子はこの順に並べてモジュール素子の端子面に配設し、第３の導体を，第２の導体の第１及び第２の経路の共通部分よりもモジュール素子側に配設するとともに、第２の導体の第１及び第２の経路の共通部分と第３の導体とを平行に近接して配置したものである。
第２の導体の負荷と直流電源の負極側とを接続する第１の経路及び負荷とフリーホイリングダイオードのアノード側とを接続する第２の経路に流れる電流は、半導体スイッチの出力側及びフリーホイリングダイオードのカソード側と負荷側とを接続する第３の導体に流れる電流とは逆向きとなる。従って、第２の導体の第１及び第２の経路の共通部分と第３の導体とを平行に近接して配置すると、互いの導体で発生する磁束が打ち消され、金属筐体に鎖交する磁束が減少して誘導加熱が抑制される。
【０００９】
さらに、本発明に係る電力変換装置は、第１の導体を，第２の導体の第１の経路よりもモジュール素子側に配設するとともに、第２の導体の第１の経路と第１の導体とを平行に近接して配置したものである。
第２の導体の負荷と直流電源の負極側とを接続する第１の経路に流れる電流は、直流電源の正極側と半導体スイッチの入力側とを接続する第１の導体に流れる電流とは逆向きとなる。従って、第２の導体の第１の経路と第１の導体とを平行に近接して配置すると、互いの導体で発生する磁束が打ち消され、金属筐体に鎖交する磁束が減少して誘導加熱が抑制される。また、互いの導体の自己インダクタンスが打ち消されるので、直流電源から半導体スイッチまでのインダクタンスが減少して、半導体スイッチの電流遮断時の跳ね上がり電圧が抑制される。
さらに、本発明に係る電力変換装置は、第２の導体と第３の導体との間，及び第２の導体と第１の導体との間に絶縁層を形成したものである。
【００１０】
【発明の実施の形態】
以下、本発明の実施の形態を添付図面に従って説明する。図１は、本発明の一実施の形態による電力変換装置の主回路の構成図である。本実施の形態は、半導体スイッチ１２として絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）を使用した例を示している。
【００１１】
図１において、チョッパ回路の半導体スイッチ１２及びフリーホイリングダイオード１３は、モジュール素子１内に構成されている。第１の導体２１は、直流電源１１の正極側と半導体スイッチ１２の入力側とを接続している。第２の導体２２は、電流経路が途中で分岐しており、負荷１５と直流電源１１の負極側とを接続する第１の経路と、負荷１５とフリーホイリングダイオード１３のアノード側とを接続する第２の経路とを有する。第３の導体２３は、半導体スイッチ１２の出力側及びフリーホイリングダイオード１３のカソード側と負荷１５とを接続している。そして、第２の導体２２の第１及び第２の経路の共通部分と第３の導体２３とが、互いに平行に近接して配置されている。また、第２の導体２２の第１の経路と第１の導体２１も、互いに平行に近接して配置されている。なお、第２の導体２２と第３の導体２３の間、及び第２の導体２２と第１の導体２１の間には、図示は省略するが絶縁フィルム等により絶縁層が形成されている。
【００１２】
図１において、第３の導体２３に破線矢印で示した電流が流れるとき、第２の導体２２の第１及び第２の経路の共通部分には破線矢印で示した逆向きの電流が流れる。従って、第３の導体２３に流れる電流により発生する磁束φCは、第２ の導体２２の第１及び第２の経路の共通部分に流れる電流により発生する磁束φnで打ち消される。このため、金属筐体２に鎖交する磁束が減少し、金属筐体２ に発生する渦電流損が減少して誘導加熱が抑制される。
【００１３】
同様に、第１の導体２１に破線矢印で示した電流が流れるとき、第２の導体２２の第１の経路には破線矢印で示した逆向きの電流が流れる。従って、第１の導体２１に流れる電流により発生する磁束は、第２の導体２２の第１の経路に流れる電流により発生する磁束で打ち消される。このため、金属筐体２に鎖交する磁束が減少し、金属筐体２に発生する渦電流損が減少して誘導加熱が抑制される。
【００１４】
また、互いに逆向きの電流が流れる２つの導体は、発生する磁束を打ち消すだけでなく、互いの導体の自己インダクタンスを打ち消す作用を持つ。従って、第２の導体２２の第１の経路と第１の導体２１とを互いに平行に近接して配置することにより、直流電源１１から半導体スイッチ１２までのインダクタンスが減少して、半導体スイッチ１２の電流遮断時の跳ね上がり電圧が抑制される。
【００１５】
図５は、降圧チョッパ回路を有する従来の電力変換装置に流れる電流の説明図である。図５の破線矢印は、半導体スイッチ１２がオンしているときに流れる電流を示している。図５に示すように、直流電源１１の正極側と半導体スイッチ１２の入力側とを接続するＰ側引き出し導体３１と、負荷１５とフリーホイリングダイオード１３のアノード側とを接続するＮ側引き出し導体３２とでは、同時に逆向きの電流が流れない。従って、従来の電力変換装置では、Ｐ側引き出し導体３１とＮ側引き出し導体３２とが平行に配置されていても、本発明のように直流電源１１から半導体スイッチ１２までのインダクタンスを減少する効果は発揮されない。
【００１６】
本実施の形態ではチョッパ回路の半導体スイッチ及びフリーホイリングダイオードがモジュール素子内に構成されていたが、本発明はモジュール素子に限らず適用できる。
また、本実施の形態では半導体スイッチとして絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）を使用した例を示したが、本発明の半導体スイッチはこれに限らず、ゲートターンオフサイリスタ（ＧＴＯ），電界効果トランジスタ（ＦＥＴ），ＭＯＳＦＥＴ等、自己消弧型の半導体スイッチであればよい。
なお、本発明の第１の導体，第２の導体，第３の導体の形状は、以上説明した実施の形態に限らず、第２の導体の第１及び第２の経路と第３の導体とを平行に近接して配置できるもの、または第２の導体の第１の経路と第１の導体とを平行に近接して配置できるものであれば、様々な形状を工夫することができる。
【００１７】
【発明の効果】
本発明によれば、第２の導体の負荷と直流電源の負極側とを接続する第１の経路及び負荷とフリーホイリングダイオードのアノード側とを接続する第２の経路と、半導体スイッチの出力側及びフリーホイリングダイオードのカソード側と負荷とを接続する第３の導体とを平行に近接して配置することにより、金属筐体の鎖交磁束が減少して、金属筐体に発生する誘導加熱を抑制することができる。
また、本発明によれば、第２の導体の負荷と直流電源の負極側とを接続する第１の経路と、直流電源の正極側と半導体スイッチの入力側とを接続する第１の導体とを平行に近接して配置することにより、直流電源から半導体スイッチまでのインダクタンスが減少して、半導体スイッチの電流遮断時の跳ね上がり電圧を抑制することができる。
【図面の簡単な説明】
【図１】 本発明の一実施の形態による電力変換装置の主回路の構成図である。
【図２】 図２（ａ）は降圧チョッパ回路の概略を示す回路図、図２（ｂ）はその負荷電流の波形図である。
【図３】 降圧チョッパ回路を有する従来の電力変換装置の主回路の構成図である。
【図４】 降圧チョッパ回路を有する従来の電力変換装置の主回路に発生する磁束変化の説明図である。
【図５】 降圧チョッパ回路を有する従来の電力変換装置に流れる電流の説明図である。
【符号の説明】
１…モジュール素子、２…金属筐体、１１…直流電源、１２…半導体スイッチ、１３…フリーホイリングダイオード、１４…直流リアクトル、１５…負荷、
２１…第１の導体、２２…第２の導体、２３…第３の導体[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a DC-DC power converter that extracts arbitrary DC power from a DC power source using a chopper circuit, and more particularly to a power converter suitable for a chopper circuit using a self-extinguishing semiconductor switch.
[0002]
[Prior art]
FIG. 2A is a circuit diagram showing an outline of the step-down chopper circuit, and FIG. 2B is a waveform diagram of the load current. In FIG. 2 (a), when turning on the semiconductor switch 12, the current I c supplied from the DC power supply 11 to the load 15 increases gradually because of the DC reactor 14. Next, when the semiconductor switch 12 is turned off, the current If flows through the freewheeling diode 13 to the load 15 due to the energy stored in the DC reactor 14. The load current flowing through the load 15 repeats fluctuations by ΔI as shown in FIG.
[0003]
Here, for example, when a self-extinguishing semiconductor switch such as an insulated gate bipolar transistor (IGBT) is used as the semiconductor switch 12, the voltage across the terminals of the semiconductor switch 12 at the time of current interruption when the semiconductor switch 12 switches from on to off. A phenomenon occurs in which V s jumps up. The magnitude of the jumping voltage when the current of the semiconductor switch 12 is interrupted is proportional to the magnitude of the inductance from the DC power supply 11 to the semiconductor switch 12. If the jumping voltage becomes excessive, the semiconductor switch 12 may be destroyed by the overvoltage. Therefore, a snubber circuit mainly composed of a capacitor is usually added to absorb the jumping voltage.
[0004]
FIG. 3 is a configuration diagram of a main circuit of a conventional power converter having a step-down chopper circuit. The semiconductor switch 12 and the freewheeling diode 13 of the chopper circuit are configured in the module element 1. Each terminal of the module element 1 is connected to a P-side common conductor 41, an N-side common conductor 42, and an output common conductor 43 through a P-side lead conductor 31, an N-side lead conductor 32, and an output lead conductor 33, respectively. Although only one module element 1 is shown in FIG. 3, a plurality of module elements are similarly connected to the P-side common conductor via the P-side lead conductor 31, the N-side lead conductor 32, and the output lead conductor 33. 41, the N-side common conductor 42, and the output common conductor 43.
[0005]
The P-side common conductor 41 and the N-side common conductor 42 connected to the DC power supply 11 are arranged in a direction orthogonal to the terminal surface of the module element 1 in consideration of the assembling property of an additional circuit such as a capacitor. The P-side lead conductor 31 and the N-side lead conductor 32 are obliquely configured to minimize the distance from each terminal of the module element 1 to the P-side common conductor 41 and the N-side common conductor 42. Thus, the inductance is reduced to suppress the jumping voltage when the current of the semiconductor switch 12 is interrupted.
[0006]
[Problems to be solved by the invention]
FIG. 4 is an explanatory diagram of magnetic flux changes that occur in a main circuit of a conventional power converter having a step-down chopper circuit. Since the load current of the step-down chopper circuit repeatedly fluctuates by ΔI, the output lead conductor 33 surrounds the output lead conductor 33 in proportion to the current change ΔI indicated by the broken line arrow in FIGS. 4A and 4B. A magnetic flux φ C is generated. When this magnetic flux φ C interlinks with the metal housing 2 in which the module element 1 is installed, an eddy current flows in the metal housing 2 to cancel the interlinkage magnetic flux, and induction heating occurs due to eddy current loss due to metal resistance. To do. The induction heating generated in the metal housing 2 becomes more prominent as the capacity of the power converter increases and the load current increases.
Conventionally, as a countermeasure against induction heating of a metal casing, use of a nonmagnetic metal such as aluminum having a low resistance, a magnetic shield, or the like has been tried.
[0007]
An object of the present invention is to suppress induction heating generated in a metal casing.
Another object of the present invention is to suppress the jumping voltage when the current of the semiconductor switch is interrupted.
[0008]
[Means for Solving the Problems]
A power conversion device according to the present invention includes a chopper circuit including a self-extinguishing semiconductor switch and a free-wheeling diode, and the semiconductor switch and the free-wheeling diode are configured in a module element installed in a metal casing. , A first terminal connected to the input side of the semiconductor switch, a second terminal connected to the anode side of the freewheeling diode, the output side of the semiconductor switch, and the free terminal A third terminal connected to both the cathode side of the wheeling diode, a first conductor connecting the positive side of the DC power source and the first terminal of the module element , a load and a negative side of the DC power source a first path for connecting the side, and a second conductor having a second path for connecting the second terminal of the load and the module elements, the module containing The third terminal and a third conductor connecting the load side of said first, second and third terminals of disposed on the terminal surface of the module element are arranged in this order, the third conductor of Is disposed closer to the module element than the common part of the first and second paths of the second conductor, and the common part of the first and second paths of the second conductor and the third conductor are connected to each other. They are arranged close to each other in parallel.
The current flowing through the first path connecting the load of the second conductor and the negative electrode side of the DC power source and the second path connecting the load and the anode side of the freewheeling diode is the output side of the semiconductor switch and the free side. The current flowing in the third conductor connecting the cathode side and the load side of the wheeling diode is in the opposite direction. Therefore, when the common part of the first and second paths of the second conductor and the third conductor are arranged close to each other in parallel, the magnetic flux generated by each conductor is canceled out and linked to the metal housing. Magnetic flux decreases and induction heating is suppressed.
[0009]
Furthermore, in the power conversion device according to the present invention, the first conductor is disposed closer to the module element than the first path of the second conductor, and the first path of the second conductor and the first path The conductor is arranged close to each other in parallel.
The current flowing through the first path connecting the load of the second conductor and the negative side of the DC power supply is opposite to the current flowing through the first conductor connecting the positive side of the DC power supply and the input side of the semiconductor switch. It becomes the direction. Therefore, when the first path of the second conductor and the first conductor are arranged close to each other in parallel, the magnetic flux generated by each conductor is canceled out, and the magnetic flux interlinked with the metal casing is reduced to induce. Heating is suppressed. Further, since the self-inductance of the mutual conductors is canceled out, the inductance from the DC power source to the semiconductor switch is reduced, and the jumping voltage when the current of the semiconductor switch is interrupted is suppressed.
Furthermore, the power converter device according to the present invention includes an insulating layer formed between the second conductor and the third conductor, and between the second conductor and the first conductor.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a configuration diagram of a main circuit of a power conversion device according to an embodiment of the present invention. This embodiment shows an example in which an insulated gate bipolar transistor (IGBT) is used as the semiconductor switch 12.
[0011]
In FIG. 1, the semiconductor switch 12 and the freewheeling diode 13 of the chopper circuit are configured in the module element 1. The first conductor 21 connects the positive side of the DC power supply 11 and the input side of the semiconductor switch 12. The second conductor 22 branches in the middle of the current path, and connects the first path connecting the load 15 and the negative side of the DC power source 11 to the load 15 and the anode side of the freewheeling diode 13. And a second route to The third conductor 23 connects the output side of the semiconductor switch 12 and the cathode side of the freewheeling diode 13 to the load 15. The common part of the first and second paths of the second conductor 22 and the third conductor 23 are arranged in parallel and close to each other. The first path of the second conductor 22 and the first conductor 21 are also arranged close to each other in parallel. Note that an insulating layer is formed between the second conductor 22 and the third conductor 23 and between the second conductor 22 and the first conductor 21 by an insulating film or the like although not shown.
[0012]
In FIG. 1, when the current indicated by the broken line arrow flows through the third conductor 23, the reverse current indicated by the broken line arrow flows through the common part of the first and second paths of the second conductor 22. Therefore, the magnetic flux φ C generated by the current flowing through the third conductor 23 is canceled out by the magnetic flux φ n generated by the current flowing through the common part of the first and second paths of the second conductor 22. For this reason, the magnetic flux linked to the metal housing 2 is reduced, the eddy current loss generated in the metal housing 2 is reduced, and induction heating is suppressed.
[0013]
Similarly, when a current indicated by a broken line arrow flows through the first conductor 21, a reverse current indicated by a broken line arrow flows through the first path of the second conductor 22. Accordingly, the magnetic flux generated by the current flowing through the first conductor 21 is canceled out by the magnetic flux generated by the current flowing through the first path of the second conductor 22. For this reason, the magnetic flux linked to the metal housing 2 is reduced, the eddy current loss generated in the metal housing 2 is reduced, and induction heating is suppressed.
[0014]
Further, the two conductors through which currents flowing in opposite directions not only cancel the generated magnetic flux, but also have the action of canceling the self-inductance of the mutual conductors. Therefore, by arranging the first path of the second conductor 22 and the first conductor 21 in close proximity to each other, the inductance from the DC power supply 11 to the semiconductor switch 12 is reduced, and the semiconductor switch 12 The jumping voltage at the time of current interruption is suppressed.
[0015]
FIG. 5 is an explanatory diagram of a current flowing in a conventional power converter having a step-down chopper circuit. A broken-line arrow in FIG. 5 indicates a current that flows when the semiconductor switch 12 is on. As shown in FIG. 5, a P-side lead conductor 31 that connects the positive side of the DC power supply 11 and the input side of the semiconductor switch 12, and an N-side lead conductor that connects the load 15 and the anode side of the freewheeling diode 13. With 32, no reverse current flows at the same time. Therefore, in the conventional power converter, even if the P-side lead conductor 31 and the N-side lead conductor 32 are arranged in parallel, the effect of reducing the inductance from the DC power supply 11 to the semiconductor switch 12 as in the present invention is not. It is not demonstrated.
[0016]
In this embodiment, the semiconductor switch of the chopper circuit and the freewheeling diode are configured in the module element, but the present invention is not limited to the module element and can be applied.
In this embodiment, an example in which an insulated gate bipolar transistor (IGBT) is used as a semiconductor switch is shown. However, the semiconductor switch of the present invention is not limited to this, and a gate turn-off thyristor (GTO), a field effect transistor (FET). A self-extinguishing semiconductor switch such as a MOSFET may be used.
The shapes of the first conductor, the second conductor, and the third conductor of the present invention are not limited to the embodiment described above, and the first and second paths and the third conductor of the second conductor. Various shapes can be devised, as long as the first path of the second conductor and the first conductor can be arranged close to each other in parallel.
[0017]
【The invention's effect】
According to the present invention, the first path connecting the load of the second conductor and the negative electrode side of the DC power supply, the second path connecting the load and the anode side of the freewheeling diode, and the output of the semiconductor switch By arranging the side and the cathode side of the freewheeling diode and the third conductor connecting the load in parallel and close to each other, the interlinkage magnetic flux of the metal casing is reduced and induction generated in the metal casing Heating can be suppressed.
In addition, according to the present invention, the first path connecting the load of the second conductor and the negative electrode side of the DC power supply, the first conductor connecting the positive electrode side of the DC power supply and the input side of the semiconductor switch, Are arranged close to each other in parallel, the inductance from the DC power source to the semiconductor switch is reduced, and the jumping voltage when the current of the semiconductor switch is interrupted can be suppressed.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a main circuit of a power conversion device according to an embodiment of the present invention.
2A is a circuit diagram showing an outline of a step-down chopper circuit, and FIG. 2B is a waveform diagram of its load current.
FIG. 3 is a configuration diagram of a main circuit of a conventional power converter having a step-down chopper circuit.
FIG. 4 is an explanatory diagram of changes in magnetic flux generated in a main circuit of a conventional power converter having a step-down chopper circuit.
FIG. 5 is an explanatory diagram of a current flowing in a conventional power converter having a step-down chopper circuit.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Module element, 2 ... Metal housing, 11 ... DC power supply, 12 ... Semiconductor switch, 13 ... Free-wheeling diode, 14 ... DC reactor, 15 ... Load,
21 ... 1st conductor, 22 ... 2nd conductor, 23 ... 3rd conductor

Claims (3)

自己消弧型の半導体スイッチとフリーホイリングダイオードとを含むチョッパ回路を備え、
前記半導体スイッチ及び前記フリーホイリングダイオードを金属筐体に設置されたモジュール素子内に構成し、
このモジュール素子の端子面に，半導体スイッチの入力側と接続されている第１の端子と，フリーホイリングダイオードのアノード側と接続されている第２の端子と，半導体スイッチの出力側及びフリーホイリングダイオードのカソード側の両方と接続されている第３の端子とを設け、
直流電源の正極側と前記モジュール素子の第１の端子とを接続する第１の導体と、
負荷と直流電源の負極側とを接続する第１の経路と、負荷と前記モジュール素子の第２の端子とを接続する第２の経路とを有する第２の導体と、
前記モジュール素子の第３の端子と負荷側とを接続する第３の導体とを備え、
前記第１，第２および第３の各端子はこの順に並べてモジュール素子の端子面に配設し、
前記第３の導体を，前記第２の導体の第１及び第２の経路の共通部分よりもモジュール素子側に配設するとともに、
前記第２の導体の第１及び第２の経路の共通部分と前記第３の導体とを平行に近接して配置したことを特徴とする電力変換装置。It has a chopper circuit including a self-extinguishing type semiconductor switch and a freewheeling diode ,
The semiconductor switch and the freewheeling diode are configured in a module element installed in a metal casing,
On the terminal surface of the module element, a first terminal connected to the input side of the semiconductor switch, a second terminal connected to the anode side of the freewheeling diode, the output side of the semiconductor switch, and the freewheel. Providing a third terminal connected to both the cathode side of the ring diode ;
A first conductor connecting a positive electrode side of a DC power source and a first terminal of the module element ;
A second conductor having a first path connecting the load and the negative electrode side of the DC power source, and a second path connecting the load and the second terminal of the module element ;
A third conductor connecting the third terminal of the module element and the load side ;
The first, second and third terminals are arranged in this order and arranged on the terminal surface of the module element,
The third conductor is disposed closer to the module element than the common part of the first and second paths of the second conductor,
The power converter according to claim 1, wherein a common portion of the first and second paths of the second conductor and the third conductor are arranged close to each other in parallel. 前記第１の導体を，前記第２の導体の第１の経路よりもモジュール素子側に配設するとともに、
前記第２の導体の第１の経路と前記第１の導体とを平行に近接して配置したことを特徴とする請求項１に記載の電力変換装置。 The first conductor is disposed closer to the module element than the first path of the second conductor,
The power converter according to claim 1, wherein the first path of the second conductor and the first conductor are arranged close to each other in parallel. 前記第２の導体と前記第３の導体との間，及び前記第２の導体と前記第１の導体との間に絶縁層を形成したことを特徴とする請求項１または２に記載の電力変換装置。The electric power according to claim 1, wherein an insulating layer is formed between the second conductor and the third conductor, and between the second conductor and the first conductor. Conversion device.
JP2001123522A 2001-04-20 2001-04-20 Power converter Expired - Lifetime JP4356263B2 (en)

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