JP4345473B2 - 弾性表面波素子の製造方法 - Google Patents
弾性表面波素子の製造方法 Download PDFInfo
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- JP4345473B2 JP4345473B2 JP2003423322A JP2003423322A JP4345473B2 JP 4345473 B2 JP4345473 B2 JP 4345473B2 JP 2003423322 A JP2003423322 A JP 2003423322A JP 2003423322 A JP2003423322 A JP 2003423322A JP 4345473 B2 JP4345473 B2 JP 4345473B2
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- polarization
- piezoelectric substrate
- acoustic wave
- surface acoustic
- wave
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- 238000010897 surface acoustic wave method Methods 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 88
- 230000010287 polarization Effects 0.000 claims description 69
- 230000005684 electric field Effects 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 27
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 7
- 229910052573 porcelain Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000032683 aging Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 LiTaO 3 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
候性、特に湿中放置時の共振周波数のシフト量が増大するという問題があった。
2…圧電性基板
2a…上面
2b,2c…端面
2f…下面
3…インターデジタルトランスデューサ
6a,6b,7a,7b…分極用電極
Claims (3)
- 第1,第2の主面を有する圧電性基板を用意する工程と、
前記圧電性基板の第1の主面と平行な方向に均一な分布の電界を印加し均一に分極を行う工程と、
前記分極時とは電界印加方向が逆向きでかつ前記圧電性基板の厚み方向に対して電界強度が傾斜的に分布するように電界の回り込み現象を利用して分極を行う工程と、
前記圧電性基板の第1の主面上にインターデジタルトランスデューサを形成する工程とを備えることを特徴とする、SH波型弾性表面波素子の製造方法。 - 前記圧電性基板として、圧電セラミックスを用いる、請求項1に記載のSH波型弾性表面波素子の製造方法。
- BGS波が励振される、請求項1または2に記載のSH波型弾性表面波素子の製造方法。
Priority Applications (1)
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JP2003423322A JP4345473B2 (ja) | 2003-12-19 | 2003-12-19 | 弾性表面波素子の製造方法 |
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JP2003423322A JP4345473B2 (ja) | 2003-12-19 | 2003-12-19 | 弾性表面波素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005184541A JP2005184541A (ja) | 2005-07-07 |
JP4345473B2 true JP4345473B2 (ja) | 2009-10-14 |
Family
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JP2003423322A Expired - Lifetime JP4345473B2 (ja) | 2003-12-19 | 2003-12-19 | 弾性表面波素子の製造方法 |
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JP (1) | JP4345473B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110797419B (zh) * | 2019-10-29 | 2021-04-06 | 华中科技大学 | 一种叉指电极结构偏振相关窄带探测器、其制备和应用 |
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2003
- 2003-12-19 JP JP2003423322A patent/JP4345473B2/ja not_active Expired - Lifetime
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JP2005184541A (ja) | 2005-07-07 |
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