JP4342843B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4342843B2 JP4342843B2 JP2003167422A JP2003167422A JP4342843B2 JP 4342843 B2 JP4342843 B2 JP 4342843B2 JP 2003167422 A JP2003167422 A JP 2003167422A JP 2003167422 A JP2003167422 A JP 2003167422A JP 4342843 B2 JP4342843 B2 JP 4342843B2
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- film
- semiconductor film
- semiconductor
- gettering
- layer
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- 239000010703 silicon Substances 0.000 claims description 30
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 27
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
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- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
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- 238000007740 vapor deposition Methods 0.000 description 3
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 150000002367 halogens Chemical class 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
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- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003167422A JP4342843B2 (ja) | 2002-06-12 | 2003-06-12 | 半導体装置の作製方法 |
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Application Number | Priority Date | Filing Date | Title |
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JP2002171224 | 2002-06-12 | ||
JP2003167422A JP4342843B2 (ja) | 2002-06-12 | 2003-06-12 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004072083A JP2004072083A (ja) | 2004-03-04 |
JP2004072083A5 JP2004072083A5 (ko) | 2006-06-22 |
JP4342843B2 true JP4342843B2 (ja) | 2009-10-14 |
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JP2003167422A Expired - Fee Related JP4342843B2 (ja) | 2002-06-12 | 2003-06-12 | 半導体装置の作製方法 |
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Country | Link |
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JP (1) | JP4342843B2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5030406B2 (ja) * | 2004-08-30 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP5235051B2 (ja) * | 2005-08-31 | 2013-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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