JP4332450B2 - 高電圧発生器 - Google Patents
高電圧発生器 Download PDFInfo
- Publication number
- JP4332450B2 JP4332450B2 JP2004056567A JP2004056567A JP4332450B2 JP 4332450 B2 JP4332450 B2 JP 4332450B2 JP 2004056567 A JP2004056567 A JP 2004056567A JP 2004056567 A JP2004056567 A JP 2004056567A JP 4332450 B2 JP4332450 B2 JP 4332450B2
- Authority
- JP
- Japan
- Prior art keywords
- high voltage
- control signal
- voltage generator
- oscillator
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Description
20 … 第1オシレータ
30 … 第2オシレータ
40 … 第1ポンプ
50 … 第2ポンプ
Claims (6)
- オプション制御信号に応じて複数の電圧源の中から一つを選択し、選択された電圧源の電圧と半導体素子チップ内の回路に供給すべき所定の高電圧とを比較するレベル検出器と、
前記オプション制御信号に応じて動作し、互いに異なる位相を有する複数のパルス信号を生成する第1オシレータと、
前記オプション制御信号に応じて動作し、パルス信号を生成する第2オシレータと、
前記オプション制御信号に応じてイネーブルされ、前記第1オシレータの出力に応じてポンピング動作して前記所定の高電圧を生成する第1チャージポンプと、
前記オプション制御信号に応じてイネーブルされ、前記第2オシレータの出力に応じてポンピング動作して前記所定の高電圧を生成する第2チャージポンプと
を備えてなる高電圧発生器。 - 請求項1に記載の高電圧発生器において、
前記レベル検出器は、
前記オプション制御信号に応じて第1電圧源の電圧の供給をスイッチングする第1スイッチング素子と、
前記オプション制御信号に応じて第2電圧源の電圧の供給をスイッチングする第2スイッチング素子と、
前記第1又は第2電圧源の電圧と前記所定の高電圧とを比較するための比較器とを含んでなる
ことを特徴とする高電圧発生器。 - 請求項2に記載の高電圧発生器において、
前記第1及び第2スイッチング素子のそれぞれがトランジスタで構成されている
ことを特徴とする高電圧発生器。 - 請求項1に記載の高電圧発生器において、
前記第2オシレータがリングオシレータで構成されている
ことを特徴とする高電圧発生器。 - 請求項1に記載の高電圧発生器において、
前記第1ポンプがダブルチャージポンプで構成されている
ことを特徴とする高電圧発生器。 - 請求項1に記載の高電圧発生器において、
前記第2ポンプがトリプルチャージポンプで構成されている
ことを特徴とする高電圧発生器。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030034131A KR100542708B1 (ko) | 2003-05-28 | 2003-05-28 | 고전압 발생기 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004355788A JP2004355788A (ja) | 2004-12-16 |
JP4332450B2 true JP4332450B2 (ja) | 2009-09-16 |
Family
ID=33448286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004056567A Expired - Fee Related JP4332450B2 (ja) | 2003-05-28 | 2004-03-01 | 高電圧発生器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6876247B2 (ja) |
JP (1) | JP4332450B2 (ja) |
KR (1) | KR100542708B1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100536603B1 (ko) * | 2003-07-10 | 2005-12-14 | 삼성전자주식회사 | 선택 모드를 갖는 전하 펌프 회로 |
KR100727440B1 (ko) * | 2005-03-31 | 2007-06-13 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100733419B1 (ko) | 2005-04-30 | 2007-06-29 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100733414B1 (ko) | 2005-04-30 | 2007-06-29 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100680441B1 (ko) * | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | 안정적인 승압 전압을 발생하는 승압 전압 발생기 |
KR100763331B1 (ko) * | 2005-06-24 | 2007-10-04 | 삼성전자주식회사 | 반도체 메모리 장치 |
KR100728553B1 (ko) | 2005-09-12 | 2007-06-15 | 주식회사 하이닉스반도체 | 반도체 집적회로 및 그 내부전압 제어방법 |
US7224207B2 (en) * | 2005-09-20 | 2007-05-29 | Taiwan Semiconductor Manufacturing Co. | Charge pump system with smooth voltage output |
US20070070725A1 (en) * | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Internal voltage supplying device |
US7710193B2 (en) | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
KR100772546B1 (ko) * | 2005-09-29 | 2007-11-02 | 주식회사 하이닉스반도체 | 고전압 생성장치 및 그를 사용한 메모리 장치의 워드라인구동 고전압 생성장치 |
KR100728904B1 (ko) * | 2005-12-28 | 2007-06-15 | 주식회사 하이닉스반도체 | 전압 발생기 및 이를 포함하는 반도체 메모리 장치 |
KR100933797B1 (ko) * | 2005-12-29 | 2009-12-24 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 승압전압 레벨 감지기 |
KR100744133B1 (ko) * | 2006-02-25 | 2007-08-01 | 삼성전자주식회사 | 안정적인 전압레벨을 제공하는 승압전압 발생회로 |
EP1881589A1 (en) * | 2006-07-19 | 2008-01-23 | STMicroelectronics S.r.l. | Charge pump circuit |
KR100757933B1 (ko) * | 2006-07-20 | 2007-09-11 | 주식회사 하이닉스반도체 | 반도체 집적 회로의 내부 전압 생성 장치 및 방법 |
KR100803363B1 (ko) * | 2006-11-13 | 2008-02-13 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압 생성 회로 |
KR20090014783A (ko) * | 2007-08-07 | 2009-02-11 | 삼성전자주식회사 | 차지 펌프 회로 및 차지 펌핑 방법 |
KR100884605B1 (ko) | 2007-09-17 | 2009-02-19 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
KR100915816B1 (ko) * | 2007-10-04 | 2009-09-07 | 주식회사 하이닉스반도체 | 내부 전압 생성 회로 |
KR100915834B1 (ko) * | 2008-08-08 | 2009-09-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 펌핑 전압 생성 회로 |
EP2166656B1 (en) * | 2008-09-18 | 2013-04-10 | STMicroelectronics Srl | Electric circuit for generating low voltage and high frequency phases in a charge pump, in particular for supplies lower than 1V |
JP5285371B2 (ja) * | 2008-09-22 | 2013-09-11 | セイコーインスツル株式会社 | バンドギャップ基準電圧回路 |
KR101003140B1 (ko) * | 2009-03-20 | 2010-12-21 | 주식회사 하이닉스반도체 | 내부 전원 발생 장치와 그의 제어 방법 |
KR101097444B1 (ko) * | 2009-12-29 | 2011-12-23 | 주식회사 하이닉스반도체 | 내부전압 생성회로 및 내부전압 생성방법 |
KR102581100B1 (ko) * | 2019-03-07 | 2023-09-20 | 삼성전기주식회사 | 차지 펌프 기반의 네가티브 전압 회로 |
TWI762401B (zh) * | 2021-08-12 | 2022-04-21 | 力晶積成電子製造股份有限公司 | 升壓時脈產生器 |
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JPH04255989A (ja) * | 1991-02-07 | 1992-09-10 | Mitsubishi Electric Corp | 半導体記憶装置および内部電圧発生方法 |
JP3245037B2 (ja) * | 1996-02-05 | 2002-01-07 | 株式会社東芝 | 半導体集積回路装置 |
TW423162B (en) * | 1997-02-27 | 2001-02-21 | Toshiba Corp | Power voltage supplying circuit and semiconductor memory including the same |
KR100244465B1 (ko) * | 1997-04-21 | 2000-02-01 | 김영환 | 동기식 승압전압 발생기 |
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US6275096B1 (en) * | 1999-12-14 | 2001-08-14 | International Business Machines Corporation | Charge pump system having multiple independently activated charge pumps and corresponding method |
KR100387266B1 (ko) * | 1999-12-28 | 2003-06-11 | 주식회사 하이닉스반도체 | 전압제어회로 |
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KR100353538B1 (ko) | 2000-10-24 | 2002-09-27 | 주식회사 하이닉스반도체 | 반도체 장치의 전압 발생 조절 회로 |
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KR100390154B1 (ko) * | 2000-12-30 | 2003-07-04 | 주식회사 하이닉스반도체 | 반도체 메모리장치의 차지 펌프회로 |
US7336121B2 (en) | 2001-05-04 | 2008-02-26 | Samsung Electronics Co., Ltd. | Negative voltage generator for a semiconductor memory device |
-
2003
- 2003-05-28 KR KR1020030034131A patent/KR100542708B1/ko active IP Right Grant
- 2003-12-17 US US10/738,233 patent/US6876247B2/en not_active Expired - Lifetime
-
2004
- 2004-03-01 JP JP2004056567A patent/JP4332450B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20040102610A (ko) | 2004-12-08 |
US20040239409A1 (en) | 2004-12-02 |
US6876247B2 (en) | 2005-04-05 |
JP2004355788A (ja) | 2004-12-16 |
KR100542708B1 (ko) | 2006-01-11 |
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