JP4281692B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP4281692B2 JP4281692B2 JP2005037153A JP2005037153A JP4281692B2 JP 4281692 B2 JP4281692 B2 JP 4281692B2 JP 2005037153 A JP2005037153 A JP 2005037153A JP 2005037153 A JP2005037153 A JP 2005037153A JP 4281692 B2 JP4281692 B2 JP 4281692B2
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- plasma
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 136
- 239000000919 ceramic Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 11
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 238000005530 etching Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Framework For Endless Conveyors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
ことにより、支持部材18のY方向の位置、すなわち可動ガイド13のY方向の位置が変更できるようになっている。固定部材15A,15Bには、支持部材18のX方向の位置を定めるための装着位置決め面15cが設けられており、支持部材18に設けられた位置決め面18a(図7参照)を装着位置決め面15cに沿わせる(当接させる)ことにより、支持部材18はX方向に位置決めされる。すなわち、固定部材15A、15Bは、支持部材18のX方向の位置を定める位置決め機能を有している。なお、この位置決め機能を実現する構造としては、溝の凹凸嵌合を利用する構造等、他の構造であってもよい。
て着脱することが可能となる。これにより、基板品種毎にセラミックス製の基板載置部を取り替えることによるコスト上昇を生じることなく、薄型基板を対象として異常放電を有効に防止可能な基板ガイド機構を実現することができる。
2 蓋部材
6 処理室
7 電極部
10 載置プレート
11 基板
12 固定ガイド
13 可動ガイド
14 高周波電源部
15A,15B 固定部材
18 支持部材
Claims (3)
- 処理室内に基板を収容して前記基板の表面をプラズマ処理するプラズマ処理装置であって、前記処理室の底部を形成するベース部と、前記ベース部に絶縁体を介して装着され上面が前記処理室内に露呈される電極部と、前記電極部の上部を構成し上面がセラミックスで覆われた基板載置部と、前記処理室内に前記プラズマ処理のためのプラズマを発生させるプラズマ発生手段と、前記基板載置部の上面に基板搬送方向に沿って複数配置され前記基板載置部に載置された基板の側端面をガイドする棒状セラミックス製のガイド部材と、前記ガイド部材の長手方向の両端部を所定間隔で保持するガイド部材保持手段とを備え、
前記ガイド部材保持手段は、前記ベース部に前記基板載置部の外縁に沿って基板搬送方向と直交する幅方向に固定配置された固定部材と、前記固定部材によって前記基板搬送方向の位置を位置決めされ、前記ガイド部材の両端部を支持するための位置決めピンが設けられた金属製の支持部材と、複数の前記支持部材を前記固定部材に前記幅方向の間隔を調整自在に装着する装着手段とを有し、前記ガイド部材を前記ガイド部材に設けられた位置合わせ孔に前記位置決めピンを嵌合させ自重のみによって前記支持部材に載置させることを特徴とするプラズマ処理装置。 - 前記基板載置部の上面には基板載置面を削り込んで複数条の溝部が前記基板搬送方向に沿って形成され、矩形棒状の前記ガイド部材の底面には前記溝部の深さ寸法よりも小さい凸出寸法の凸部および前記基板の厚み寸法よりも大きい切り込み寸法で前記底面を切り込んだ切込部が長手方向に連続して形成されており、前記凸部を前記溝部に進入させて前記ガイド部材を前記基板載置面に載置した状態において、前記基板載置面に載置された前記基板の側端部を前記切込部によってガイドすることを特徴とする請求項1記載のプラズマ処理装置。
- 前記装着手段は、前記固定部材に等ピッチで複数設けられたねじ孔と、前記支持部材に前記固定部材の長手方向に設けられた長尺の取付用長穴に挿通させて前記ねじ孔に螺合されるボルトから成り、また前記支持部材には前記ガイド部材を支持するための装着段差部が設けられており、前記支持部材に対して前記ガイド部材を下降させてこのガイド部材の底面から凸出した凸部を前記装着段差部に沿わせ、かつ前記ガイド部材に設けられた位置合わせ孔に前記位置決めピンを嵌合させることにより、前記ガイド部材を前記支持部材に
載置することを特徴とする請求項1記載のプラズマ処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005037153A JP4281692B2 (ja) | 2005-02-15 | 2005-02-15 | プラズマ処理装置 |
PCT/JP2006/302780 WO2006088114A1 (en) | 2005-02-15 | 2006-02-10 | Plasma treatment apparatus |
KR1020067019337A KR20070109791A (ko) | 2005-02-15 | 2006-02-10 | 플라즈마 처리장치 |
US10/593,385 US8016974B2 (en) | 2005-02-15 | 2006-02-10 | Plasma treatment apparatus |
CNB2006800001120A CN100474508C (zh) | 2005-02-15 | 2006-02-10 | 等离子处理装置 |
MYPI20060608A MY155260A (en) | 2005-02-15 | 2006-02-14 | Plasma treatment apparatus |
TW095104816A TW200638480A (en) | 2005-02-15 | 2006-02-14 | Plasma treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005037153A JP4281692B2 (ja) | 2005-02-15 | 2005-02-15 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006228773A JP2006228773A (ja) | 2006-08-31 |
JP4281692B2 true JP4281692B2 (ja) | 2009-06-17 |
Family
ID=36263866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005037153A Active JP4281692B2 (ja) | 2005-02-15 | 2005-02-15 | プラズマ処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8016974B2 (ja) |
JP (1) | JP4281692B2 (ja) |
KR (1) | KR20070109791A (ja) |
CN (1) | CN100474508C (ja) |
MY (1) | MY155260A (ja) |
TW (1) | TW200638480A (ja) |
WO (1) | WO2006088114A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7455735B2 (en) * | 2005-09-28 | 2008-11-25 | Nordson Corporation | Width adjustable substrate support for plasma processing |
JP2008226514A (ja) * | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP5995205B2 (ja) * | 2013-06-26 | 2016-09-21 | パナソニックIpマネジメント株式会社 | プラズマ処理装置、および、プラズマ処理方法 |
JP6032649B2 (ja) * | 2013-06-26 | 2016-11-30 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
JP6160820B2 (ja) * | 2013-07-26 | 2017-07-12 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
JP2015082471A (ja) * | 2013-10-24 | 2015-04-27 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
WO2017005290A1 (en) * | 2015-07-06 | 2017-01-12 | Applied Materials, Inc. | Carrier for supporting at least one substrate during a sputter deposition process, apparatus for sputter deposition on at least one substrate, and method for sputter deposition on at least one substrate |
CN108138314A (zh) * | 2015-09-21 | 2018-06-08 | 应用材料公司 | 基板载体、以及溅射沉积设备和其使用方法 |
JP6524531B2 (ja) * | 2015-12-17 | 2019-06-05 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6473974B2 (ja) * | 2016-09-30 | 2019-02-27 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6932601B2 (ja) * | 2017-09-27 | 2021-09-08 | パナソニックスマートファクトリーソリューションズ株式会社 | 搬送装置 |
FR3072974A1 (fr) * | 2017-10-31 | 2019-05-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Porte-substrat, destine a etre utilise dans un appareil de pulverisation cathodique magnetron radio-frequence, et procede de fabrication d'une couche mince isolante electronique utilisant un tel porte-substrat |
CN108284284A (zh) * | 2018-03-22 | 2018-07-17 | 珠海宝丰堂电子科技有限公司 | 等离子处理设备及其等离子处理腔体 |
JP7300609B2 (ja) * | 2019-09-05 | 2023-06-30 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59124591A (ja) * | 1982-12-30 | 1984-07-18 | 大日本スクリ−ン製造株式会社 | 薄板物の移送装置 |
JP3071202B2 (ja) | 1989-07-19 | 2000-07-31 | 富士電機株式会社 | 半導体圧力センサの増巾補償回路 |
JP2758755B2 (ja) * | 1991-12-11 | 1998-05-28 | 松下電器産業株式会社 | ドライエッチング装置及び方法 |
JP3149550B2 (ja) | 1992-06-19 | 2001-03-26 | キヤノン株式会社 | 接触式帯電装置及び画像形成装置 |
US5823416A (en) * | 1995-07-28 | 1998-10-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment apparatus |
JP3173339B2 (ja) | 1995-08-24 | 2001-06-04 | 松下電器産業株式会社 | 表面処理装置 |
JP3597310B2 (ja) | 1996-07-11 | 2004-12-08 | 東洋食品機械株式会社 | 物品搬送装置に於けるガイド装置 |
JP3324417B2 (ja) | 1996-11-14 | 2002-09-17 | 松下電器産業株式会社 | プラズマクリーニング装置 |
JP3201302B2 (ja) | 1997-02-10 | 2001-08-20 | 松下電器産業株式会社 | 基板のプラズマクリーニング装置 |
JP3663902B2 (ja) | 1998-04-06 | 2005-06-22 | 松下電器産業株式会社 | 基板の搬送用ベルトおよび基板の搬送装置 |
JP2000212777A (ja) * | 1999-01-26 | 2000-08-02 | Matsushita Electric Ind Co Ltd | プラズマエッチング装置 |
JP2001358122A (ja) | 2000-06-12 | 2001-12-26 | Matsushita Electric Ind Co Ltd | 基板のプラズマ処理装置 |
JP3842052B2 (ja) | 2001-02-16 | 2006-11-08 | 不二精機株式会社 | 食品等の容器自動供給装置 |
US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
-
2005
- 2005-02-15 JP JP2005037153A patent/JP4281692B2/ja active Active
-
2006
- 2006-02-10 WO PCT/JP2006/302780 patent/WO2006088114A1/en active Application Filing
- 2006-02-10 US US10/593,385 patent/US8016974B2/en active Active
- 2006-02-10 CN CNB2006800001120A patent/CN100474508C/zh active Active
- 2006-02-10 KR KR1020067019337A patent/KR20070109791A/ko not_active Application Discontinuation
- 2006-02-14 MY MYPI20060608A patent/MY155260A/en unknown
- 2006-02-14 TW TW095104816A patent/TW200638480A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20080251208A1 (en) | 2008-10-16 |
CN1943012A (zh) | 2007-04-04 |
WO2006088114A1 (en) | 2006-08-24 |
CN100474508C (zh) | 2009-04-01 |
JP2006228773A (ja) | 2006-08-31 |
MY155260A (en) | 2015-09-30 |
KR20070109791A (ko) | 2007-11-15 |
TW200638480A (en) | 2006-11-01 |
US8016974B2 (en) | 2011-09-13 |
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