JP4264375B2 - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP4264375B2 JP4264375B2 JP2004095429A JP2004095429A JP4264375B2 JP 4264375 B2 JP4264375 B2 JP 4264375B2 JP 2004095429 A JP2004095429 A JP 2004095429A JP 2004095429 A JP2004095429 A JP 2004095429A JP 4264375 B2 JP4264375 B2 JP 4264375B2
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- Engineering & Computer Science (AREA)
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Description
20 ベースプレート
22 穴
30 ケーシング
40 ターミナル要素
42、44、46 ワイヤボンディング接続部
50 基板
52 絶縁材料ボディ
53 金属被覆(銅層)
54 接続パス(銅層)
56 パワー半導体素子
58 センサ機構構成部品
60、61 バネ接触部(接触バネ)
70 カバー
71 導体プレート(プリント配線板)
72 導体パス
74 差込ピンコネクタ
76 接触ピン
78 接触点(接触面)
Claims (5)
- ベースプレート(20)を備えた又は冷却体上に直接的に取り付けるパワー半導体モジュール(10)であって、このパワー半導体モジュールが、フレーム状のケーシング(30)と、カバー(70)とを有し、更にケーシング(30)の内部に配設されている電気絶縁式の少なくとも1つの基板(50)を備えていて、この基板が絶縁材料ボディ(52)を有し、この絶縁材料ボディ上に設けられていて互いに絶縁されている金属性の多数の接続パス(54)と、これらの接続パス上に設けられていて回路に適してこれらの接続パスと接続されている多数のパワー半導体素子(56)と、負荷接触及び補助接触のために外部へと通じる多数のターミナル要素とを備えている、前記パワー半導体モジュールにおいて、
これらのターミナル要素の少なくとも一部が、パワー半導体モジュールの内部にて、接続パス(54)と導体プレート(71)上の接触点(78)との間に配設されている接触コネクタ(60)により形成され、これらの接触コネクタ(60)が接触バネとして形成されていて、更には導体プレート(71)が導体パス(72)を有し、これらの導体パスが、それらの接触点(78)を、接触要素(76)であって基板(50)上の内部ターミナル配列とは異なる外部ターミナル配列を有して外部へと通じる接触要素(76)と接続させ、そして導体プレート(71)が、フレーム状に形成されているカバー(70)の内側に埋設されていて、カバー(70)のための組込構成部分であることを特徴とするパワー半導体モジュール。 - 導体プレート(71)上に能動的な電子構成要素及び/又は受動的な電子構成要素(80、82)が配設されていて、回路に適して導体パス(72)と接続されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- ベースプレート(20)又は冷却体も少なくとも1つの接触コネクタ(61)を用いて導体プレート(71)と接続されていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 接触要素(76)が差込ピンコネクタ又はロウ付けラグとして形成されていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 少なくとも1つの基板(50)がセンサ機構構成部品を有することを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10316355A DE10316355C5 (de) | 2003-04-10 | 2003-04-10 | Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung |
Publications (2)
Publication Number | Publication Date |
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JP2004319991A JP2004319991A (ja) | 2004-11-11 |
JP4264375B2 true JP4264375B2 (ja) | 2009-05-13 |
Family
ID=32404459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004095429A Expired - Fee Related JP4264375B2 (ja) | 2003-04-10 | 2004-03-29 | パワー半導体モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US6958534B2 (ja) |
EP (1) | EP1467407B1 (ja) |
JP (1) | JP4264375B2 (ja) |
AT (1) | ATE416478T1 (ja) |
DE (2) | DE10316355C5 (ja) |
DK (1) | DK1467407T3 (ja) |
ES (1) | ES2316889T3 (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10333329B4 (de) | 2003-07-23 | 2011-07-21 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungshalbleitermodul mit biegesteifer Grundplatte |
DE10333328B3 (de) | 2003-07-23 | 2005-01-27 | Semikron Elektronik Gmbh | Leistungshalbleitermodul in skalierbarer Aufbautechnik |
DE102004025609B4 (de) * | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102005024900B4 (de) * | 2004-06-08 | 2012-08-16 | Fuji Electric Co., Ltd. | Leistungsmodul |
FR2877436B1 (fr) * | 2004-11-03 | 2007-01-26 | Mitsubishi Electric Corp | Dispositif de detection de courant |
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2003
- 2003-04-10 DE DE10316355A patent/DE10316355C5/de not_active Expired - Fee Related
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2004
- 2004-03-13 EP EP04006022A patent/EP1467407B1/de not_active Expired - Lifetime
- 2004-03-13 ES ES04006022T patent/ES2316889T3/es not_active Expired - Lifetime
- 2004-03-13 DE DE502004008566T patent/DE502004008566D1/de not_active Expired - Lifetime
- 2004-03-13 DK DK04006022T patent/DK1467407T3/da active
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EP1467407B1 (de) | 2008-12-03 |
ATE416478T1 (de) | 2008-12-15 |
US20040245548A1 (en) | 2004-12-09 |
DE10316355B3 (de) | 2004-07-01 |
US6958534B2 (en) | 2005-10-25 |
ES2316889T3 (es) | 2009-04-16 |
JP2004319991A (ja) | 2004-11-11 |
EP1467407A1 (de) | 2004-10-13 |
DE10316355C5 (de) | 2008-03-06 |
DE502004008566D1 (de) | 2009-01-15 |
DK1467407T3 (da) | 2009-02-23 |
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