JP2004319991A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP2004319991A JP2004319991A JP2004095429A JP2004095429A JP2004319991A JP 2004319991 A JP2004319991 A JP 2004319991A JP 2004095429 A JP2004095429 A JP 2004095429A JP 2004095429 A JP2004095429 A JP 2004095429A JP 2004319991 A JP2004319991 A JP 2004319991A
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Abstract
【解決手段】 ターミナル要素の少なくとも一部が、パワー半導体モジュールの内部にて、接続パス(54)と導体プレート(71)上の接触点(78)との間に配設されている接触コネクタ(60)により形成され、更には導体プレート(71)が導体パス(72)を有し、これらの導体パスが、それらの接触点を、外部へと通じる接触要素(76)と接続させること。
【選択図】 図3
Description
20 ベースプレート
22 穴
30 ケーシング
40 ターミナル要素
42、44、46 ワイヤボンディング接続部
50 基板
52 絶縁材料ボディ
53 金属被覆(銅層)
54 接続パス(銅層)
56 パワー半導体素子
58 センサ機構構成部品
60、61 バネ接触部(接触バネ)
70 カバー
71 導体プレート(プリント配線板)
72 導体パス
74 差込ピンコネクタ
76 接触ピン
78 接触点(接触面)
Claims (9)
- ベースプレート(20)を備えた又は冷却体上に直接的に取り付けるパワー半導体モジュール(10)であって、このパワー半導体モジュールが、フレーム状のケーシング(30)とカバー(70)とを有し、更にケーシング(30)の内部に配設されている電気絶縁式の少なくとも1つの基板(50)を備えていて、この基板の方は絶縁材料ボディ(52)を有し、この絶縁材料ボディが、この絶縁材料ボディ上に設けられていて互いに絶縁されている金属性の多数の接続パス(54)と、これらの接続パス上に設けられていて回路に適してこれらの接続パスと接続されている多数のパワー半導体素子(56)と、負荷接触及び補助接触のために外部へと通じる多数のターミナル要素とを備えている前記パワー半導体モジュールにおいて、
これらのターミナル要素の少なくとも一部が、パワー半導体モジュールの内部にて、接続パス(54)と導体プレート(71)上の接触点(78)との間に配設されている接触コネクタ(60)により形成され、更には導体プレート(71)が導体パス(72)を有し、これらの導体パスが、それらの接触点を、外部へと通じる接触要素(76)と接続させることを特徴とするパワー半導体モジュール。 - 導体プレート(71)上に能動的な電子構成要素及び/又は受動的な電子構成要素(80、82)が配設されていて、回路に適して導体パス(72)と接続されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- ベースプレート(20)又は冷却体も少なくとも1つの接触コネクタ(61)を用いて導体プレート(71)と接続されていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 接触コネクタ(60)が接触バネとして形成されていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 導体プレート(71)がパワー半導体モジュール(10)の内部で基板(50)とカバー(70)との間にて平行に配列されていて、この導体プレート(71)が接触要素(76)を有し、これらの接触要素が導体プレート自体並びにカバーを貫いて通じていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 導体プレート(71)がフレーム状に形成されているカバー(70)の内部に埋設されていて、それによりこの導体プレート自体がカバー(70)の一部を形成することを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 導体プレートがカバー(70)自体から形成されていて、同時にその内側面上には導体パスが配設されていて、更にはパワー半導体モジュールがこのカバーを貫いて通じる接触要素(76)を有することを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 接触要素が差込ピンコネクタ又はロウ付けラグとして形成されていることを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
- 少なくとも1つの基板(50)がセンサ機構構成部品を有することを特徴とする、請求項1又は2に記載のパワー半導体モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE10316355A DE10316355C5 (de) | 2003-04-10 | 2003-04-10 | Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung |
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JP2004319991A true JP2004319991A (ja) | 2004-11-11 |
JP4264375B2 JP4264375B2 (ja) | 2009-05-13 |
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JP2004095429A Expired - Fee Related JP4264375B2 (ja) | 2003-04-10 | 2004-03-29 | パワー半導体モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US6958534B2 (ja) |
EP (1) | EP1467407B1 (ja) |
JP (1) | JP4264375B2 (ja) |
AT (1) | ATE416478T1 (ja) |
DE (2) | DE10316355C5 (ja) |
DK (1) | DK1467407T3 (ja) |
ES (1) | ES2316889T3 (ja) |
Cited By (3)
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JP2007335858A (ja) * | 2006-06-14 | 2007-12-27 | Semikron Elektronik Gmbh & Co Kg | 互いに電気絶縁された端子要素を備えたパワー半導体モジュール |
JP2008283183A (ja) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co Kg | 金属接触層を有するパワー半導体基板並びにそのための製造方法 |
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JP2001036002A (ja) * | 1999-07-23 | 2001-02-09 | Fuji Electric Co Ltd | 半導体装置 |
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JP2001189416A (ja) * | 1999-12-28 | 2001-07-10 | Mitsubishi Electric Corp | パワーモジュール |
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US6373125B1 (en) | 2000-02-23 | 2002-04-16 | International Business Machines Corporation | Chip scale package with direct attachment of chip to lead frame |
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JP3923258B2 (ja) * | 2001-01-17 | 2007-05-30 | 松下電器産業株式会社 | 電力制御系電子回路装置及びその製造方法 |
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-
2003
- 2003-04-10 DE DE10316355A patent/DE10316355C5/de not_active Expired - Fee Related
-
2004
- 2004-03-13 EP EP04006022A patent/EP1467407B1/de not_active Expired - Lifetime
- 2004-03-13 AT AT04006022T patent/ATE416478T1/de not_active IP Right Cessation
- 2004-03-13 ES ES04006022T patent/ES2316889T3/es not_active Expired - Lifetime
- 2004-03-13 DE DE502004008566T patent/DE502004008566D1/de not_active Expired - Lifetime
- 2004-03-13 DK DK04006022T patent/DK1467407T3/da active
- 2004-03-29 JP JP2004095429A patent/JP4264375B2/ja not_active Expired - Fee Related
- 2004-04-09 US US10/821,290 patent/US6958534B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007150303A (ja) * | 2005-11-23 | 2007-06-14 | Semikron Elektronik Gmbh & Co Kg | 端子要素を備えたパワー半導体モジュール |
JP2007335858A (ja) * | 2006-06-14 | 2007-12-27 | Semikron Elektronik Gmbh & Co Kg | 互いに電気絶縁された端子要素を備えたパワー半導体モジュール |
JP2008283183A (ja) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co Kg | 金属接触層を有するパワー半導体基板並びにそのための製造方法 |
Also Published As
Publication number | Publication date |
---|---|
ES2316889T3 (es) | 2009-04-16 |
JP4264375B2 (ja) | 2009-05-13 |
EP1467407B1 (de) | 2008-12-03 |
DE10316355C5 (de) | 2008-03-06 |
US6958534B2 (en) | 2005-10-25 |
DE502004008566D1 (de) | 2009-01-15 |
DK1467407T3 (da) | 2009-02-23 |
US20040245548A1 (en) | 2004-12-09 |
ATE416478T1 (de) | 2008-12-15 |
DE10316355B3 (de) | 2004-07-01 |
EP1467407A1 (de) | 2004-10-13 |
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