JP4222920B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4222920B2 JP4222920B2 JP2003343348A JP2003343348A JP4222920B2 JP 4222920 B2 JP4222920 B2 JP 4222920B2 JP 2003343348 A JP2003343348 A JP 2003343348A JP 2003343348 A JP2003343348 A JP 2003343348A JP 4222920 B2 JP4222920 B2 JP 4222920B2
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- Prior art keywords
- pad
- row
- semiconductor device
- semiconductor chip
- output terminal
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Description
(A1)それに並列するパッド列は他にない。
(A2)集約パッド列のパッド列は1直線状に配列されているか、または上記の相対向する2辺間の間隔の1/4以下の間隔で配列された2本の直線状に配列されている。
(A3)集約パッド列は、相対向する辺の1/2以上の長さにわたって形成される。
図1は本発明の実施の形態1における半導体装置の平面図であり、図2は図1におけるII−II線に沿う断面図である。図1および2を参照して、ダイパッド22に搭載された半導体チップ1には、パッド線19に沿って一列にボンディングパッド列5が配置されている。このボンディングパッド5は、半導体チップの相対向する2辺1bの間に、これら2辺1bに並列するパッド列が他にないように集約されてこれら2辺に並列して配列された集約パッド列である。すなわち、上記のボンディングパッド列5は、集約パッドが備えるべき条件(A1)、(A2)および(A3)を満たしている。図1において、条件(A3)は、s≧(1/2)Sと表現される。
図2に示すように、インナーリード21a,21b,21cは、半導体チップ1の表面よりも高い位置に設けられる。インナーリード21a,21b,21cと、半導体チップ1のボンディングパッド5とは、金属細線3によって接続されている。そして、半導体チップ1、ダイパッド22、金属細線3およびインナーリード21の根元部は、封止樹脂4により封止されている。インナーリード21の先端部が封止樹脂4から突き出るようにされている。
図6〜図8は、本発明の実施の形態2における半導体装置における半導体チップを示す図である。上記実施の形態1では、集約パッド列のみが配置された半導体チップを示した。図6では、平面的に見て、集約パッド列5とパッド列15a,15cとにより、H字型にパッドが配列されている。パッド列15a,15cは集約パッド列の条件(A1)および(A2)をともに満たすことはないので、集約パッド列ではない。パッド列15a,15cは交差辺1a,1cの縁に沿って位置するパッド列である。集約パッド列5とパッド列15a,15cとを組み合せてH字型にした配列したパッドによっても、従来の配列に比べてデッドスペースを抑制することができる。
図9は、本発明の実施の形態3における半導体装置を示す図である。上述の実施の形態1および2では、インナーリード21を半導体チップの辺に沿ってほぼ同じ密度で配置した構造について説明した。本実施の形態では、集約パッド列5のパッドが載るパッド線19と交差する辺1a,1cに対向するインナーリード列の配列を調整する点に特徴がある。
図11は、本発明の実施の形態4における半導体装置を示す図である。図2の半導体装置では、半導体チップはダイパッドに搭載され、裏面側も封止樹脂によって覆われていた。しかし、半導体チップは、図11に示すように、その裏面が封止樹脂から露出されていてもよい。また、半導体チップは、ダイパッドに搭載されていてもよいし、また搭載されなくてもよい。ダイパッドに搭載されている場合は、ダイパッドの裏面が封止樹脂から露出することになる。この場合も、本発明の範囲内に含まれる。
上述した各実施の形態では、QFP等に用いられる金属フレームの場合について説明した。しかし、本発明の実施の形態では、フレームは、FBGA(Flexible Ball Grid Array)等に用いられる樹脂フレームであってもよい。樹脂フレームを用いることにより、軽量化およびさらに小型化の効果を得た上で、上述の実施の形態と同様の効果を奏することができる。
Claims (16)
- 主面上に配列された集約パッド列を有する矩形状の半導体チップと、
前記半導体チップの周囲において少なくとも3つの辺に沿うように配列された出力端子列と、
前記集約パッド列と前記出力端子とを接続するものであって、前記半導体チップの主面を上から見て、前記出力端子列に前記半導体チップの主面の外周よりも外側の領域において接続されるボンディングワイヤとを備え、
前記集約パッド列は、前記半導体チップの相対向する2辺が延びる方向に沿って一直線状に並んでいる複数のパッドから構成される、半導体装置。 - 前記集約パッド列が前記相対向する2辺の中央に位置する、請求項1に記載の半導体装置。
- 前記集約パッド列が前記相対向する2辺間の、一方の辺の縁に配列される、請求項1に記載の半導体装置。
- 主面上に配列された集約パッド列を有する矩形状の半導体チップと、
前記半導体チップの周囲において少なくとも3辺に沿うように配列された出力端子列と、
前記集約パッド列と前記出力端子とを接続するものであって、前記半導体チップの主面を上から見て、前記出力端子列に前記半導体チップの主面の外周よりも外側の領域において接続されるボンディングワイヤとを備え、
前記集約パッド列は、前記半導体チップの相対向する2辺間の間隔の1/4以下の間隔で配列された2本の直線状パッド列から構成され、
前記直線状パッド列はそれぞれ、前記相対向する2辺が延びる方向に沿って一直線状に並んでいる複数のパッドから構成される、半導体装置。 - 前記半導体チップは、前記相対向する2辺と交差する前記半導体チップの辺である交差辺の縁に沿って配列されるパッド列をさらに有する、請求項1〜4のいずれかに記載の半導体装置。
- 平面的に見て、前記集約パッド列とパッド列とで形成されるパターンがH字型である、請求項5に記載の半導体装置。
- 平面的に見て、前記集約パッド列とパッド列とで形成されるパターンがU字型である、請求項5に記載の半導体装置。
- 平面的に見て、前記集約パッド列とパッド列とで形成されるパターンがクランク型である、請求項5に記載の半導体装置。
- 前記出力端子列は、前記相対向する2辺のうち一方の辺に対向して沿うように配列される第1の出力端子列の端子と、他方の辺に対向して沿うように配列される第2の出力端子列の端子とを含み、
前記複数のパッドは、パッドが並ぶ順番に前記第1の出力端子列と前記第2の出力端子列とに交互に接続される、請求項1〜3のいずれかに記載の半導体装置。 - 前記複数のパッドの端に位置するパッドから見て、前記複数のパッドを通るパッド線から一方の側に45°まで、また他方の側に45°までの計90°の範囲内に、出力端子を配置しない出力端子フリーゾーンを設けた、請求項1〜9のいずれかに記載の半導体装置。
- ボンディングワイヤで接続された、前記相対向する2辺に交差する前記半導体チップの辺である交差辺に沿うように配列された出力端子列の端子と、前記集約パッド列のパッドとを結ぶ直線が、平面的に見て、前記複数のパッドを通るパッド線と、およそ45°の角度をなす、請求項10に記載の半導体装置。
- 前記複数のパッドの端に位置するパッドから見て、前記複数のパッドを通るパッド線から一方の側に45°まで、また他方の側に45°までの計90°の範囲内に、出力端子を2つ以下配置した、請求項1〜9のいずれかに記載の半導体装置。
- 半導体チップの上面の高さが、前記出力端子列の端子の上面と同じか、より低い、請求項1〜12のいずれかに記載の半導体装置。
- 前記半導体装置は封止樹脂によって封止され、半導体チップの裏面がその封止樹脂から露出されている、請求項1〜13のいずれかに記載の半導体装置。
- 前記半導体装置は封止樹脂によって封止され、前記半導体チップの裏面側に配置されたダイパッドがその封止樹脂から露出されている、請求項1〜13のいずれかに記載の半導体装置。
- 前記半導体チップが、金属フレームおよび樹脂フレームのいずれかに搭載されている、請求項1〜13のいずれかに記載の半導体装置。
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