JP4219798B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JP4219798B2
JP4219798B2 JP2003421719A JP2003421719A JP4219798B2 JP 4219798 B2 JP4219798 B2 JP 4219798B2 JP 2003421719 A JP2003421719 A JP 2003421719A JP 2003421719 A JP2003421719 A JP 2003421719A JP 4219798 B2 JP4219798 B2 JP 4219798B2
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substrate
processing unit
main surface
plasma
adhesion
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JP2005181644A (en
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友美 平下
光明 芳谷
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Description

この発明は、半導体ウエハ、フラットパネルディスプレイ用ガラス基板、フォトマスク用ガラス基板、プリント基板等の基板の主面にＨＭＤＳ（ヘキサメチルジシラザン）等の密着強化剤を被着させた後にレジスト膜を形成する基板処理装置に関する。 In the present invention, a resist film is formed after an adhesion reinforcing agent such as HMDS (hexamethyldisilazane) is deposited on the main surface of a substrate such as a semiconductor wafer, a glass substrate for flat panel display, a glass substrate for photomask, or a printed circuit board formed about board processor.

半導体ウエハ等の基板の表面にレジスト液を塗布してレジスト膜を形成する場合には、基板の表面とレジスト膜との密着性を強化するために、レジスト塗布工程前に基板表面にＨＭＤＳ等の密着強化剤を塗布して被着させる処理（アドヒージョン処理）が行われる。この処理においては、一般的に基板の温度を上げるほど基板表面と密着強化剤との密着性が高くなる。このため、密着強化剤の被着工程では、基板をホットプレート上に載置して、例えば８０℃〜１５０℃程度の温度に加熱し、基板表面と密着強化剤との反応を促進させるようにしている。そして、基板の温度が高くなったままではレジスト液の塗布処理に不都合を生じるため、密着強化剤が被着した基板をクールプレート上に移載して急速に冷却させ、その後に基板の表面にレジスト液を塗布するようにしている（例えば、特許文献１参照。）。
特開平１１−１４５２４６号公報（第５頁、図１） In the case of forming a resist film by applying a resist solution to the surface of a substrate such as a semiconductor wafer, in order to enhance the adhesion between the surface of the substrate and the resist film, HMDS or the like is applied to the substrate surface before the resist coating process. A process (adhesion process) for applying and adhering an adhesion enhancing agent is performed. In this process, generally, the higher the temperature of the substrate, the higher the adhesion between the substrate surface and the adhesion enhancer. For this reason, in the adhesion reinforcing agent deposition step, the substrate is placed on a hot plate and heated to a temperature of, for example, about 80 ° C. to 150 ° C. to promote the reaction between the substrate surface and the adhesion reinforcing agent. ing. Then, if the temperature of the substrate remains high, it causes inconvenience in the coating process of the resist solution. Therefore, the substrate coated with the adhesion reinforcing agent is transferred onto the cool plate and rapidly cooled, and then is applied to the surface of the substrate. A resist solution is applied (for example, refer to Patent Document 1).
JP-A-11-145246 (5th page, FIG. 1)

基板の表面に密着強化剤を塗布する際に基板を加熱するようにしたときは、基板を所定温度まで上昇させるための時間が必要となり、また、上記したようにレジスト塗布工程前に基板を冷却するための時間が必要となる。このため、一連の基板処理に時間がかかり、処理タクトが長くなる、といった問題点がある。また、基板を加熱するためのホットプレートや基板を冷却するためのクールプレートを設置する必要があり、また、基板をホットプレート上へ搬送して移載したり、ホットプレート上からクールプレート上へ基板を移載したりするために基板搬送ロボットを設置する必要がある。このため、一連の処理を行う装置全体の設置スペースが大きくなる、といった問題点がある。   When the substrate is heated when the adhesion enhancing agent is applied to the surface of the substrate, it takes time to raise the substrate to a predetermined temperature, and as described above, the substrate is cooled before the resist coating process. Time is required. For this reason, there is a problem that a series of substrate processing takes time and processing tact time becomes long. In addition, it is necessary to install a hot plate for heating the substrate and a cool plate for cooling the substrate. Also, the substrate can be transferred to the hot plate and transferred, or from the hot plate to the cool plate. It is necessary to install a substrate transfer robot to transfer the substrate. For this reason, there exists a problem that the installation space of the whole apparatus which performs a series of processes becomes large.

この発明は、以上のような事情に鑑みてなされたものであり、基板の主面に密着強化剤を被着させた後にレジスト膜を形成する基板処理において、基板の主面に密着強化剤を被着させる際に基板を加熱する必要を無くし、一連の基板処理に要する時間を短縮して、処理タクトを短くすることができ、また、一連の基板処理を行う装置全体の省スペース化を図ることができる基板処理装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and in the substrate processing for forming a resist film after depositing the adhesion reinforcing agent on the main surface of the substrate, the adhesion reinforcing agent is applied to the main surface of the substrate. There is no need to heat the substrate during deposition, the time required for a series of substrate processing can be shortened, the processing tact time can be shortened, and the entire apparatus for performing a series of substrate processing can be saved. it is an object of the invention to provide a board processing unit that can have.

請求項１に係る発明は、基板の主面にレジスト膜を形成する基板処理装置において、電極を有しその電極間を通過する気体をプラズマ化して吐出するノズル、および、このノズルへ気体を供給する気体供給手段を備えて構成され、常圧下で基板の主面の周囲にプラズマ雰囲気を形成させて基板の主面を活性化させるプラズマ処理部と、このプラズマ処理部に隣接して配置され、プラズマ処理部で活性化された基板の主面に常温下で密着強化剤を被着させる密着強化処理部と、密着強化剤が被着した基板の主面にレジスト液を塗布してレジスト膜を形成するレジスト塗布部と、前記プラズマ処理部において前記ノズルの吐出口と主面が近接するように基板を支持しつつ搬送するとともに、前記プラズマ処理部から前記密着強化処理部まで基板を連続的に搬送するローラコンベアとを備えたことを特徴とする。 According to a first aspect of the present invention, in a substrate processing apparatus for forming a resist film on a main surface of a substrate , a nozzle that has electrodes and discharges the gas passing between the electrodes into plasma, and supplies the gas to the nozzle is configured to include a gas supply means for a plasma processing unit to activate the main surface of the substrate to form a plasma atmosphere around the main surface of the substrate at atmospheric pressure, it is disposed adjacent to the plasma processing unit, Applying a resist solution to the main surface of the substrate coated with the adhesion enhancing agent on the main surface of the substrate activated by the plasma processing unit ; a resist coating unit for forming, together with the conveying while supporting the substrate to the discharge port and the main surface of the nozzle is closer in the plasma processing unit, the substrate from the plasma processing portion to the adhesion reinforcing processing unit Characterized by comprising a roller conveyor for conveying connection basis.

請求項１に係る発明の基板処理装置を使用すると、プラズマ処理部において、気体供給手段によってノズルへ供給された気体が、ノズルの電極間に発生したパルス電界中を通過する間にプラズマ化され、そのプラズマ化された気体がノズルから吐出されて、ローラコンベアによりノズルの吐出口と近接した状態で搬送される基板の主面へ供給され、基板の主面の周囲に高エネルギ状態のプラズマ雰囲気が形成される。そして、密着強化処理部において、プラズマのエネルギを利用して基板の主面に密着強化剤が被着させられる。このため、基板の主面に密着強化剤を被着させるために基板を加熱して基板に対し熱エネルギを与える必要が無くなり、基板を加熱しないので、レジスト塗布部において基板の主面にレジスト液を塗布する前に基板を冷却させる必要も無くなる。したがって、一連の基板処理に要する時間を短縮して、処理タクトを短くすることができ、また、一連の基板処理を行う装置全体の省スペース化を図ることができる。そして、プラズマ処理部では基板の主面の周囲にプラズマ雰囲気を形成させる処理が常圧下で行われ、また、密着強化処理部では基板の主面に密着強化剤を被着させる処理が常温下で行われるので、プラズマ処理部の内部から密着強化処理部の内部にかけてインライン化することが可能になる。また、ローラコンベアによりプラズマ処理部から密着強化処理部まで基板を連続的に搬送しながら一連の基板処理が行われ、装置をインライン化することができる。そして、ロボットによる基板搬送に比べて搬送手段の構成を簡易化することができる。 When the substrate processing apparatus of the invention according to claim 1 is used, in the plasma processing unit, the gas supplied to the nozzle by the gas supply means is converted into plasma while passing through the pulsed electric field generated between the electrodes of the nozzle, The plasma gas is discharged from the nozzle and supplied to the main surface of the substrate conveyed in a state close to the discharge port of the nozzle by a roller conveyor, and a high-energy plasma atmosphere is formed around the main surface of the substrate. Ru is formed. Then, in the adhesion strengthening processing unit, the adhesion enhancing agent is deposited on the main surface of the substrate using the energy of the plasma. For this reason, it is not necessary to heat the substrate and apply thermal energy to the substrate in order to deposit the adhesion reinforcing agent on the main surface of the substrate, and the substrate is not heated. There is no need to cool the substrate before coating. Therefore, the time required for a series of substrate processing can be shortened, the processing tact time can be shortened, and the space for the entire apparatus for performing the series of substrate processing can be saved. In the plasma processing unit, a process for forming a plasma atmosphere around the main surface of the substrate is performed under normal pressure. In the adhesion strengthening processing unit, a process for depositing an adhesion reinforcing agent on the main surface of the substrate is performed at room temperature. Since it is performed, it becomes possible to perform in-line from the inside of the plasma processing unit to the inside of the adhesion strengthening processing unit. In addition, a series of substrate processing is performed while the substrate is continuously conveyed from the plasma processing unit to the adhesion strengthening processing unit by the roller conveyor, so that the apparatus can be inlined. And the structure of a conveyance means can be simplified compared with the board | substrate conveyance by a robot.

図１ないし図３を参照しながら、この発明を実施するための最良の形態について説明する。
図１ないし図３は、この発明の実施形態の１例を示し、図１は、基板の主面にレジスト膜を形成するのに使用される基板処理装置の全体構成を示す概略図であり、図２は、この基板処理装置の一部であるプラズマ処理部および密着強化処理部を示す模式図であり、図３は、この基板処理装置の構成ユニットの１つであるプラズマ処理部の概略断面図である。 While Figures 1 Referring to FIG. 3, it described best mode for carrying out the present invention.
1 to 3 show an example of an embodiment of the present invention, and FIG. 1 is a schematic view showing an overall configuration of a substrate processing apparatus used for forming a resist film on a main surface of a substrate. FIG. 2 is a schematic view showing a plasma processing unit and an adhesion strengthening processing unit which are a part of the substrate processing apparatus, and FIG. 3 is a schematic cross section of the plasma processing unit which is one of the constituent units of the substrate processing apparatus. FIG.

この基板処理装置は、ＵＶ処理部１０、水洗処理部１２、乾燥処理部１４、プラズマ処理部１６、密着強化処理部１８およびレジスト塗布部２０を備えて構成されている。それぞれの処理部は、チャンバ２２〜３２を備えており、ＵＶ処理部１０、水洗処理部１２、乾燥処理部１４、プラズマ処理部１６および密着強化処理部１８のチャンバ２２〜３０の内部には、基板Ｗを水平方向へ連続的に搬送するためにローラコンベア３４ａ〜３４ｅがそれぞれ配設されている。 The substrate processing apparatus includes a UV processing unit 10, a water washing processing unit 12, a drying processing unit 14, a plasma processing unit 16, an adhesion strengthening processing unit 18, and a resist coating unit 20. Each processing unit includes chambers 22 to 32. Inside the chambers 22 to 30 of the UV processing unit 10, the water washing processing unit 12, the drying processing unit 14, the plasma processing unit 16, and the adhesion strengthening processing unit 18, b Rakonbea 34a~34e are respectively arranged to continuously transport the substrate W in the horizontal direction.

各処理部についての詳しい説明および図示はそれらを省略するが、ＵＶ処理部１０では、ローダ部（図示せず）からチャンバ２２内に搬入されてきた基板Ｗの主面に対し紫外線を照射して、基板Ｗの主面に付着している有機物汚染を酸化分解して除去する。水洗処理部１２では、純水を使用して、ロールブラシによるスクラブ洗浄、超音波スプレイ洗浄、高圧ジェット式スプレイ洗浄などの方法により基板Ｗの主面を洗浄する。乾燥処理部１４では、基板Ｗの主面に残留している液滴をエアーナイフにより吹き飛ばして除去した後、チャンバ２６内を排気しながら加熱気体、ヒータなどで基板Ｗを加熱して基板Ｗの主面から水分を除去する。また、プラズマ処理部１６では、基板Ｗの主面にプラズマ化したガスが供給され、密着強化処理部１８では、密着強化剤、例えばＨＭＤＳが基板Ｗの主面に供給されるが、これらの処理部については後述する。レジスト塗布部２０には、スピンコータが設置されており、また、密着強化処理部１８のチャンバ３０内から搬出されてくる基板Ｗを受け取ってスピンコータのスピンチャック上へ基板Ｗを搬送する搬送機構が設けられている。そして、レジスト塗布部２０において、基板Ｗの主面にレジスト液が塗布されてレジスト膜が形成される。さらに、レジスト塗布部２０の後段側には、図示していないが減圧乾燥処理部が設けられており、基板Ｗの主面に形成されたレジスト膜の減圧乾燥が行われる。   Although detailed description and illustration of each processing unit are omitted, the UV processing unit 10 irradiates the main surface of the substrate W carried into the chamber 22 from the loader unit (not shown) with ultraviolet rays. The organic contaminants adhering to the main surface of the substrate W are removed by oxidative decomposition. The washing unit 12 uses pure water to clean the main surface of the substrate W by a method such as scrub cleaning with a roll brush, ultrasonic spray cleaning, or high-pressure jet spray cleaning. In the drying processing unit 14, droplets remaining on the main surface of the substrate W are removed by blowing off with an air knife, and then the substrate W is heated with a heated gas, a heater, or the like while the chamber 26 is exhausted, and the substrate W is heated. Remove moisture from the main surface. Further, in the plasma processing unit 16, plasma gas is supplied to the main surface of the substrate W, and in the adhesion strengthening processing unit 18, an adhesion reinforcing agent such as HMDS is supplied to the main surface of the substrate W. The part will be described later. The resist coating unit 20 is provided with a spin coater, and is provided with a transport mechanism for receiving the substrate W carried out from the chamber 30 of the adhesion strengthening processing unit 18 and transporting the substrate W onto the spin chuck of the spin coater. It has been. In the resist coating unit 20, a resist solution is applied to the main surface of the substrate W to form a resist film. Further, although not shown, a reduced-pressure drying processing unit is provided on the rear side of the resist coating unit 20, and the resist film formed on the main surface of the substrate W is dried under reduced pressure.

プラズマ処理部１６には、図２に示すように、基板搬入口３６および基板搬出口３８を有する密閉型のチャンバ２８内に、ガスをプラズマ化して吐出するノズル４０が配設されている。チャンバ２８の内部は、常圧に保たれている。ノズル４０は、その下端の吐出口がローラコンベア３４ｄにより支持されて搬送される基板Ｗの主面（上面）と対向し近接するように配置される。このノズル４０は、図３に示すように一対の電極４２ａ、４２ｂを有し、一方の電極４２ａが電源に接続され、他方の電極４２ｂが接地されている。ノズル４０には、ガス供給管４４が連通接続されており、ガス供給管４４を通してノズル４０にガス、例えば酸素、窒素、アルゴン等のガスが供給されるようになっている。そして、ノズル４０に供給されたガスが、電極４２ａ、４２ｂ間に発生したパルス電界中を通過する間にプラズマ化され、プラズマ化されたガスがノズル４０の吐出口から基板Ｗの主面に向けて吐出される。これにより、基板Ｗの主面の周囲に高エネルギ状態のプラズマ雰囲気が形成される。また、チャンバ２８には排気口４６が設けられ、その排気口４６に排気管４８が連通接続されており、この排気管４８を通してチャンバ２８内の排気が行われる。これにより、チャンバ２８内から雰囲気ガスが漏れないようにされている。 As shown in FIG. 2, the plasma processing unit 16 is provided with a nozzle 40 that converts gas into plasma and discharges it into a sealed chamber 28 having a substrate carry-in port 36 and a substrate carry-out port 38. The interior of the chamber 28 is maintained at normal pressure. The nozzle 40 is disposed such that the discharge port at the lower end faces and is close to the main surface (upper surface) of the substrate W that is supported and conveyed by the roller conveyor 34d. As shown in FIG. 3, the nozzle 40 has a pair of electrodes 42a and 42b. One electrode 42a is connected to a power source, and the other electrode 42b is grounded. A gas supply pipe 44 is connected in communication with the nozzle 40, and a gas such as oxygen, nitrogen, argon or the like is supplied to the nozzle 40 through the gas supply pipe 44. The gas supplied to the nozzle 40 is turned into plasma while passing through the pulsed electric field generated between the electrodes 42 a and 42 b, and the plasmaized gas is directed from the discharge port of the nozzle 40 toward the main surface of the substrate W. Discharged. As a result, a high-energy plasma atmosphere is formed around the main surface of the substrate W. In addition, an exhaust port 46 is provided in the chamber 28, and an exhaust pipe 48 is connected to the exhaust port 46, and the exhaust in the chamber 28 is performed through the exhaust pipe 48. This prevents atmospheric gas from leaking out of the chamber 28 .

密着強化処理部１８のチャンバ３０は、図２に示すように、プラズマ処理部１６のチャンバ２８の基板搬出口３８と対向する基板搬入口５０を有し、他方の側面に基板搬出口５２が形設されて、密閉された構造を有している。チャンバ３０にはガス供給口５４が設けられ、そのガス供給口５４にガス供給管５６が連通接続されており、このガス供給管５６を通してＨＭＤＳがチャンバ３０内へ供給されるようになっている。ＨＭＤＳは、例えば窒素ガスによるバブリングによりミスト化して窒素ガスと共にチャンバ３０内へ供給される。このようにすることにより、基板Ｗの主面にＨＭＤＳを均一に塗布することができ、また、基板Ｗの主面に塗布されたＨＭＤＳが蒸発し易くなる。また、チャンバ３０には排気口５８が設けられ、その排気口５８に排気管６０が連通接続されており、この排気管６０を通してチャンバ３０内の排気が行われる。これにより、チャンバ３０内からＨＭＤＳを含む雰囲気ガスが漏れないようにされている。チャンバ３０の内部は常温に保たれ、チャンバ３０内に供給されたＨＭＤＳのミスト雰囲気中を、ローラコンベア３４ｅによって基板Ｗが搬送されることにより、基板Ｗの主面にＨＭＤＳが塗布され被着される。 As shown in FIG. 2, the chamber 30 of the adhesion strengthening processing unit 18 has a substrate carry-in port 50 facing the substrate carry-out port 38 of the chamber 28 of the plasma processing unit 16, and the substrate carry-out port 52 is formed on the other side surface. It has a sealed structure. A gas supply port 54 is provided in the chamber 30, and a gas supply pipe 56 is connected to the gas supply port 54, and HMDS is supplied into the chamber 30 through the gas supply pipe 56. The HMDS is misted by bubbling with nitrogen gas, for example, and supplied into the chamber 30 together with the nitrogen gas. By doing in this way, HMDS can be uniformly apply | coated to the main surface of the board | substrate W, and HMDS apply | coated to the main surface of the board | substrate W becomes easy to evaporate. An exhaust port 58 is provided in the chamber 30, and an exhaust pipe 60 is connected to the exhaust port 58, and the chamber 30 is exhausted through the exhaust pipe 60. This prevents atmospheric gas containing HMDS from leaking from the chamber 30. The interior of the chamber 30 is kept at room temperature, and the substrate W is transported by the roller conveyor 34e through the HMDS mist atmosphere supplied into the chamber 30 , so that the main surface of the substrate W is applied and deposited. The

上記した構成を備えた基板処理装置を使用して基板の主面にレジスト膜を形成するときは、プラズマ処理部１６において基板Ｗの主面の周囲に高エネルギ状態のプラズマ雰囲気が形成され、このような状態の基板Ｗがプラズマ処理部１６から密着強化処理部１８へ搬送され、密着強化処理部１８においてプラズマのエネルギを利用して基板Ｗの主面にＨＭＤＳが被着させられる。このため、密着強化処理部１８の前段側および密着強化処理部１８に、基板Ｗを加熱するためのベーク部を設ける必要が無くなり、また、基板Ｗを加熱しないので、密着強化処理部１８とレジスト塗布部２０との間に基板Ｗを冷却させるための冷却部を設ける必要も無くなる。そして、基板Ｗの一連の処理は、ＵＶ処理部１０から密着強化処理部１８まで基板Ｗをローラコンベア３４ａ〜３４ｅによって連続的に搬送しながら行うことができる。したがって、一連の基板処理に要する時間を短縮して処理タクトを短くすることができ、また、装置全体の設置スペースを小さくすることができる。   When a resist film is formed on the main surface of the substrate using the substrate processing apparatus having the above-described configuration, a high-energy plasma atmosphere is formed around the main surface of the substrate W in the plasma processing unit 16. The substrate W in such a state is transferred from the plasma processing unit 16 to the adhesion strengthening processing unit 18, and HMDS is deposited on the main surface of the substrate W using the energy of the plasma in the adhesion strengthening processing unit 18. For this reason, it is not necessary to provide a bake part for heating the substrate W on the upstream side of the adhesion strengthening processing unit 18 and the adhesion strengthening processing unit 18, and the substrate W is not heated. There is no need to provide a cooling unit for cooling the substrate W between the coating unit 20 and the coating unit 20. And a series of processes of the board | substrate W can be performed, conveying the board | substrate W from the UV process part 10 to the contact | adherence reinforcement | strengthening process part 18 by the roller conveyors 34a-34e continuously. Accordingly, the time required for a series of substrate processings can be shortened, the processing tact time can be shortened, and the installation space of the entire apparatus can be reduced.

なお、密着強化処理部１８の後段側に、基板Ｗの主面に塗布されたＨＭＤＳの蒸発を促進させるための手段、例えば４０℃〜５０℃程度の温度に基板Ｗを加熱する加熱部、真空排気チャンバ、基板Ｗの主面に対して乾燥エアーを供給するブロー部などを設けるようにしてもよい。また、レジスト塗布部２０の前段側に、基板Ｗの温度を所定温度に調整する温度調整機構を設けるようにしてもよい。   A means for promoting evaporation of HMDS applied to the main surface of the substrate W, for example, a heating unit for heating the substrate W to a temperature of about 40 ° C. to 50 ° C. A blow unit for supplying dry air to the main surface of the exhaust chamber and the substrate W may be provided. Further, a temperature adjustment mechanism that adjusts the temperature of the substrate W to a predetermined temperature may be provided on the front side of the resist coating unit 20.

この発明の実施形態の１例を示し、基板の主面にレジスト膜を形成するのに使用される基板処理装置の全体構成を示す概略図である。FIG. 1 is a schematic diagram illustrating an overall configuration of a substrate processing apparatus used to form a resist film on a main surface of a substrate according to an example of an embodiment of the present invention. 図１に示した基板処理装置の一部であるプラズマ処理部および密着強化処理部を示す模式図である。It is a schematic diagram which shows the plasma processing part and adhesion reinforcement | strengthening process part which are some substrate processing apparatuses shown in FIG. 図１に示した基板処理装置の構成ユニットの１つであるプラズマ処理部の概略断面図である。 It is a schematic sectional drawing of the plasma processing part which is one of the structural units of the substrate processing apparatus shown in FIG .

符号の説明Explanation of symbols

Ｗ 基板
１０ ＵＶ処理部
１２ 水洗処理部
１４ 乾燥処理部
１６ プラズマ処理部
１８ 密着強化処理部
２０ レジスト塗布部
２２〜３２ チャンバ
３４ａ〜３４ｅ ローラコンベア
３６、５０ チャンバの基板搬入口
３８、５２ チャンバの基板搬出口
４０ ノズル
４２ａ、４２ｂ 電極
４４ ガス供給管
４８、６０ 排気管
５４ チャンバのガス供給口
５６ ガス供給管 W substrate 10 UV processing section 12 water washing processing section 14 drying processing section 16 plasma processing section 18 adhesion strengthening processing section 20 resist coating section 22-32 chamber 34a-34 e roller conveyor 36, 50 chamber substrate inlet 38, 52 chamber Substrate carry-out port 40 Nozzle 42a, 42b Electrode 44 Gas supply pipe 48, 60 Exhaust pipe 54 Gas supply port 56 of the chamber 56 Gas supply pipe

Claims (1)

基板の主面にレジスト膜を形成する基板処理装置において、
電極を有しその電極間を通過する気体をプラズマ化して吐出するノズル、および、このノズルへ気体を供給する気体供給手段を備えて構成され、常圧下で基板の主面の周囲にプラズマ雰囲気を形成させて基板の主面を活性化させるプラズマ処理部と、
このプラズマ処理部に隣接して配置され、プラズマ処理部で活性化された基板の主面に常温下で密着強化剤を被着させる密着強化処理部と、
密着強化剤が被着した基板の主面にレジスト液を塗布してレジスト膜を形成するレジスト塗布部と、
前記プラズマ処理部において前記ノズルの吐出口と主面が近接するように基板を支持しつつ搬送するとともに、前記プラズマ処理部から前記密着強化処理部まで基板を連続的に搬送するローラコンベアと、
を備えたことを特徴とする基板処理装置。 In a substrate processing apparatus for forming a resist film on the main surface of a substrate,
A nozzle that has electrodes and discharges the gas passing between the electrodes into plasma, and gas supply means for supplying the gas to the nozzle, and is configured to provide a plasma atmosphere around the main surface of the substrate under normal pressure. A plasma processing unit for forming and activating the main surface of the substrate;
An adhesion strengthening processing unit that is disposed adjacent to the plasma processing unit and adheres an adhesion reinforcing agent to the main surface of the substrate activated by the plasma processing unit at room temperature,
A resist application part that forms a resist film by applying a resist solution to the main surface of the substrate to which the adhesion reinforcing agent is applied;
A roller conveyor that conveys the substrate continuously from the plasma processing unit to the adhesion strengthening processing unit while conveying the substrate so that the discharge port of the nozzle and the main surface are close to each other in the plasma processing unit,
A substrate processing apparatus comprising:
JP2003421719A 2003-12-18 2003-12-18 Substrate processing equipment Expired - Fee Related JP4219798B2 (en)

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