JP4160550B2 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- JP4160550B2 JP4160550B2 JP2004316704A JP2004316704A JP4160550B2 JP 4160550 B2 JP4160550 B2 JP 4160550B2 JP 2004316704 A JP2004316704 A JP 2004316704A JP 2004316704 A JP2004316704 A JP 2004316704A JP 4160550 B2 JP4160550 B2 JP 4160550B2
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 239000000758 substrate Substances 0.000 claims description 76
- 239000012535 impurity Substances 0.000 claims description 23
- 230000005669 field effect Effects 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 91
- 239000010410 layer Substances 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- -1 for example Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910003811 SiGeC Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
Description
図1は、この発明の第1の実施形態に係る不揮発性半導体記憶装置の一構造例を示す断面図である。
図6は、この発明の第2の実施形態に係る不揮発性半導体記憶装置の一構造例を示す断面図である。なお、図6において、図1と同一の部分については同一の参照符号を付し、異なる部分についてのみ説明する。
Claims (5)
- 1015cm−3より低い不純物濃度領域を持つ第1導電型の半導体基板と、
前記半導体基板内に形成された第1導電型の第1ウェルと、
前記第1ウェルに形成された複数のメモリセルトランジスタと、
前記第1ウェルの側面領域を囲む第1部分、及び前記第1ウェルの下部領域を囲む第2部分を有し、前記第1ウェルを前記半導体基板から電気的に分離する第2導電型の第2ウェルと、
前記半導体基板内に形成された第2導電型の第3ウェルと、
前記半導体基板内に、前記半導体基板領域を介して前記第2ウェルの側面と対向するように形成された第1導電型の第4ウェルと、
前記半導体基板上に形成され、前記メモリセルトランジスタのゲート絶縁膜よりも厚く、16nm以上50nm以下のゲート絶縁膜を有する第2絶縁ゲート型電界効果トランジスタと、を備え、
前記第3ウェルの深さは、前記第2ウェルの第2部分の深さよりも浅く、
前記第2絶縁ゲート型電界効果トランジスタは、前記第2ウェルと前記半導体基板領域と前記第4ウェルとを介して、前記メモリセルトランジスタと対向し、
前記第4ウェルは、前記第2ウェルの第1部分を囲むように形成される
ことを特徴とする不揮発性半導体記憶装置。 - 前記第4ウェルは、前記半導体基板表面から、0.5umから1.6umの範囲の深さとなること
を特徴とする請求項1に記載の不揮発性半導体記憶装置。 - 前記第3ウェルに形成された、前記メモリセルトランジスタのゲート絶縁膜よりも厚いゲート絶縁膜を有する絶縁ゲート型電界効果トランジスタを有すること
を特徴とする請求項1または2に記載の不揮発性半導体記憶装置。 - 前記第3ウェルには、前記半導体基板の電位に対し、15V以上の電位差が印加されること
を特徴とする請求項1乃至3のいずれか1項に記載の不揮発性半導体記憶装置。 - 前記メモリセルトランジスタは、データを一括して消去することが可能な不揮発性半導体記憶装置のメモリセルであること
を特徴とする請求項1乃至請求項4のいずれか1項に記載の不揮発性半導体記憶装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004316704A JP4160550B2 (ja) | 2004-10-29 | 2004-10-29 | 不揮発性半導体記憶装置 |
US11/031,036 US7800154B2 (en) | 2004-10-29 | 2005-01-10 | Nonvolatile semiconductor memory device with twin-well |
KR1020050101883A KR100798194B1 (ko) | 2004-10-29 | 2005-10-27 | 트윈-웰을 갖는 불휘발성 반도체 기억 장치 |
US12/175,201 US8008703B2 (en) | 2004-10-29 | 2008-07-17 | Nonvolatile semiconductor memory device with twin-well |
US13/170,592 US8268686B2 (en) | 2004-10-29 | 2011-06-28 | Nonvolatile semiconductor memory device with twin-well |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004316704A JP4160550B2 (ja) | 2004-10-29 | 2004-10-29 | 不揮発性半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008157050A Division JP4602441B2 (ja) | 2008-06-16 | 2008-06-16 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006128496A JP2006128496A (ja) | 2006-05-18 |
JP4160550B2 true JP4160550B2 (ja) | 2008-10-01 |
Family
ID=36260831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004316704A Expired - Fee Related JP4160550B2 (ja) | 2004-10-29 | 2004-10-29 | 不揮発性半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (3) | US7800154B2 (ja) |
JP (1) | JP4160550B2 (ja) |
KR (1) | KR100798194B1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108310A (ja) * | 2004-10-04 | 2006-04-20 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
JP2006310602A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
US7999299B2 (en) * | 2005-06-23 | 2011-08-16 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor for peripheral circuit |
JP4316540B2 (ja) * | 2005-06-24 | 2009-08-19 | 株式会社東芝 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
KR100719219B1 (ko) * | 2005-09-20 | 2007-05-16 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
JP4718961B2 (ja) * | 2005-09-30 | 2011-07-06 | 株式会社東芝 | 半導体集積回路装置及びその製造方法 |
US7548095B1 (en) * | 2008-01-30 | 2009-06-16 | Actel Corporation | Isolation scheme for static and dynamic FPGA partial programming |
KR20090120689A (ko) * | 2008-05-20 | 2009-11-25 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의제조 방법 |
US7990772B2 (en) | 2009-03-11 | 2011-08-02 | Micron Technology Inc. | Memory device having improved programming operation |
US9184097B2 (en) * | 2009-03-12 | 2015-11-10 | System General Corporation | Semiconductor devices and formation methods thereof |
JP2012038818A (ja) | 2010-08-04 | 2012-02-23 | Toshiba Corp | 半導体装置 |
US8878337B1 (en) * | 2011-07-19 | 2014-11-04 | Xilinx, Inc. | Integrated circuit structure having a capacitor structured to reduce dishing of metal layers |
KR20130019242A (ko) * | 2011-08-16 | 2013-02-26 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US9059630B2 (en) * | 2011-08-31 | 2015-06-16 | Knowles Electronics, Llc | High voltage multiplier for a microphone and method of manufacture |
KR20130074353A (ko) * | 2011-12-26 | 2013-07-04 | 삼성전자주식회사 | 트랜지스터를 포함하는 반도체 소자 |
US9196749B1 (en) * | 2011-12-30 | 2015-11-24 | Altera Corporation | Programmable device with a metal oxide semiconductor field effect transistor |
US8772940B2 (en) * | 2012-07-10 | 2014-07-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
KR20140023806A (ko) | 2012-08-17 | 2014-02-27 | 삼성전자주식회사 | 자기 저항 메모리 장치의 배치 구조 |
US9240417B1 (en) * | 2014-08-27 | 2016-01-19 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
US10204917B2 (en) | 2016-12-08 | 2019-02-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing embedded non-volatile memory |
JP2022127907A (ja) * | 2021-02-22 | 2022-09-01 | キオクシア株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (15)
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US6740958B2 (en) * | 1985-09-25 | 2004-05-25 | Renesas Technology Corp. | Semiconductor memory device |
JP3226589B2 (ja) * | 1992-03-12 | 2001-11-05 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
JPH10223770A (ja) * | 1997-02-10 | 1998-08-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3419672B2 (ja) * | 1997-12-19 | 2003-06-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6013932A (en) * | 1998-01-07 | 2000-01-11 | Micron Technology, Inc. | Supply voltage reduction circuit for integrated circuit |
JP2978467B2 (ja) | 1998-03-16 | 1999-11-15 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP2000299475A (ja) * | 1999-02-12 | 2000-10-24 | Sumitomo Electric Ind Ltd | 電界効果トランジスタおよびその製造方法 |
JP2001028191A (ja) * | 1999-07-12 | 2001-01-30 | Mitsubishi Electric Corp | 不揮発性半導体メモリの自動消去方法 |
KR100391404B1 (ko) * | 1999-07-13 | 2003-07-12 | 가부시끼가이샤 도시바 | 반도체 메모리 |
JP2001102553A (ja) | 1999-09-29 | 2001-04-13 | Sony Corp | 半導体装置、その駆動方法および製造方法 |
EP1091408A1 (en) * | 1999-10-07 | 2001-04-11 | STMicroelectronics S.r.l. | Non-volatile memory cell with a single level of polysilicon |
JP2002280460A (ja) * | 2001-03-22 | 2002-09-27 | Mitsubishi Electric Corp | 半導体装置 |
JP3944013B2 (ja) * | 2002-07-09 | 2007-07-11 | 株式会社東芝 | 不揮発性半導体メモリ装置およびその製造方法 |
JP4115283B2 (ja) * | 2003-01-07 | 2008-07-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2006310602A (ja) | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2004
- 2004-10-29 JP JP2004316704A patent/JP4160550B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-10 US US11/031,036 patent/US7800154B2/en not_active Expired - Fee Related
- 2005-10-27 KR KR1020050101883A patent/KR100798194B1/ko not_active IP Right Cessation
-
2008
- 2008-07-17 US US12/175,201 patent/US8008703B2/en not_active Expired - Fee Related
-
2011
- 2011-06-28 US US13/170,592 patent/US8268686B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8268686B2 (en) | 2012-09-18 |
US20060091470A1 (en) | 2006-05-04 |
JP2006128496A (ja) | 2006-05-18 |
US8008703B2 (en) | 2011-08-30 |
KR20060052271A (ko) | 2006-05-19 |
KR100798194B1 (ko) | 2008-01-24 |
US20110254097A1 (en) | 2011-10-20 |
US7800154B2 (en) | 2010-09-21 |
US20080283896A1 (en) | 2008-11-20 |
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