JP4158055B2 - 薄膜トランジスタを製造する方法 - Google Patents
薄膜トランジスタを製造する方法 Download PDFInfo
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- JP4158055B2 JP4158055B2 JP2007324732A JP2007324732A JP4158055B2 JP 4158055 B2 JP4158055 B2 JP 4158055B2 JP 2007324732 A JP2007324732 A JP 2007324732A JP 2007324732 A JP2007324732 A JP 2007324732A JP 4158055 B2 JP4158055 B2 JP 4158055B2
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- film transistor
- thin film
- plasma
- manufacturing
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- 239000010409 thin film Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000001272 nitrous oxide Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 3
- 230000008569 process Effects 0.000 description 23
- 239000010408 film Substances 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 238000001994 activation Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- -1 boron ions Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Description
density)に換算すると、パワー密度が100ワット/(40cm×32cm)=0.078ワット/cm2である。N型薄膜トランジスタにとって、図16は、上述した条件の下で行われる閾値電圧の調整曲線を表す説明図である。10秒から50秒までの異なる工程時間に、N型薄膜トランジスタの閾値電圧が最初の2.5ボルトからそれぞれ1.4ボルトと0.4ボルトに下がる。P型薄膜トランジスタにとって、図17は、上述した条件の下で行われる閾値電圧の調整曲線を表す説明図である。10秒から50秒までの異なる工程時間に、P型薄膜トランジスタの閾値電圧が最初の−2.4ボルトからそれぞれ−4.2ボルトと−5.6ボルトに下がる。その後、脱水素工程を行う。
10、101 低温多結晶薄膜トランジスタ
12、112 バッファー層
14、114 非晶質シリコン層
14’、114’ 多結晶シリコン層
16、116 多結晶シリコンアイランド
18、26、118、126 レジスト
22、122 ゲート電極絶縁層
28、128 金属ゲート電極
Claims (8)
- 薄膜トランジスタを製造する方法であって、
基板を設置するステップと、
前記基板の上に非晶質シリコン層を堆積するステップと、
アンモニアプラズマ又は酸素を含むプラズマを前記非晶質シリコン層と接触させることによって、前記薄膜トランジスタの閾値電圧を調整するステップと、
結晶工程を行い、前記非晶質シリコン層を多結晶シリコン層に変換することを含んでなることを特徴とする薄膜トランジスタを製造する方法。 - 前記非晶質シリコン層を堆積する前に、更に前記基板の上に少なくとも一つのバッファー層を堆積するステップを含むことを特徴とする請求項1記載の薄膜トランジスタを製造する方法。
- 前記バッファー層が窒化珪素層を含むことを特徴とする請求項2記載の薄膜トランジスタを製造する方法。
- 前記バッファー層が酸化珪素層を含むことを特徴とする請求項2記載の薄膜トランジスタを製造する方法。
- 前記プラズマは、酸素を含むプラズマであり、前記薄膜トランジスタの閾値電圧をマイナス方向に偏移して調整することができることを特徴とする請求項1記載の薄膜トランジスタを製造する方法。
- 前記酸素を含むプラズマが亜酸化窒素のプラズマであることを特徴とする請求項5記載の薄膜トランジスタを製造する方法。
- 前記酸素を含むプラズマが酸素のプラズマであることを特徴とする請求項5記載の薄膜トランジスタを製造する方法。
- 前記プラズマは、アンモニアプラズマであり、前記薄膜トランジスタの閾値電圧をプラス方向に偏移して調整することができることを特徴とする請求項1記載の薄膜トランジスタを製造する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092105009A TWI222752B (en) | 2003-03-07 | 2003-03-07 | Method for manufacturing a thin film transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003143449A Division JP4079364B2 (ja) | 2003-03-07 | 2003-05-21 | 薄膜トランジスタを製造する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008147680A JP2008147680A (ja) | 2008-06-26 |
JP4158055B2 true JP4158055B2 (ja) | 2008-10-01 |
Family
ID=32924607
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2003143449A Expired - Fee Related JP4079364B2 (ja) | 2003-03-07 | 2003-05-21 | 薄膜トランジスタを製造する方法 |
JP2007324732A Expired - Lifetime JP4158055B2 (ja) | 2003-03-07 | 2007-12-17 | 薄膜トランジスタを製造する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003143449A Expired - Fee Related JP4079364B2 (ja) | 2003-03-07 | 2003-05-21 | 薄膜トランジスタを製造する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20040175870A1 (ja) |
JP (2) | JP4079364B2 (ja) |
TW (1) | TWI222752B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7600999B2 (en) * | 2003-02-26 | 2009-10-13 | Align Technology, Inc. | Systems and methods for fabricating a dental template |
TWI247432B (en) * | 2004-12-03 | 2006-01-11 | Chunghwa Picture Tubes Ltd | Manufacturing method of thin film transistor and poly-silicon layer |
TWI311213B (en) * | 2004-12-24 | 2009-06-21 | Au Optronics Corp | Crystallizing method for forming poly-si films and thin film transistors using same |
TW200924033A (en) * | 2007-11-16 | 2009-06-01 | Tpo Displays Corp | Method for forming a polysilicon thin film layer |
WO2012081474A1 (ja) * | 2010-12-14 | 2012-06-21 | シャープ株式会社 | 結晶性半導体膜の形成方法 |
CN102629558B (zh) * | 2012-01-09 | 2015-05-20 | 深超光电(深圳)有限公司 | 低温多晶硅薄膜晶体管制造方法 |
KR101507381B1 (ko) * | 2014-02-26 | 2015-03-30 | 주식회사 유진테크 | 폴리실리콘 막의 성막 방법 |
CN104037127A (zh) * | 2014-06-11 | 2014-09-10 | 京东方科技集团股份有限公司 | 一种多晶硅层及显示基板的制备方法、显示基板 |
KR101927579B1 (ko) * | 2016-02-19 | 2018-12-10 | 경희대학교 산학협력단 | 전이금속 디칼코게나이드 박막 트랜지스터 및 그 제조방법 |
CN108335969B (zh) * | 2018-02-05 | 2020-08-18 | 信利(惠州)智能显示有限公司 | 改善tft器件阈值电压的处理方法 |
CN109616476A (zh) * | 2018-12-17 | 2019-04-12 | 惠科股份有限公司 | 主动开关及其制作方法、显示装置 |
-
2003
- 2003-03-07 TW TW092105009A patent/TWI222752B/zh not_active IP Right Cessation
- 2003-04-22 US US10/249,585 patent/US20040175870A1/en not_active Abandoned
- 2003-05-21 JP JP2003143449A patent/JP4079364B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-17 JP JP2007324732A patent/JP4158055B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW200418190A (en) | 2004-09-16 |
US20040175870A1 (en) | 2004-09-09 |
JP2004274012A (ja) | 2004-09-30 |
JP4079364B2 (ja) | 2008-04-23 |
JP2008147680A (ja) | 2008-06-26 |
TWI222752B (en) | 2004-10-21 |
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