JP4155954B2 - リソグラフィ装置及びデバイス製造方法 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Description
放射線ビームを調整するように構成された照明装置と、
パターン形成装置が放射線ビームの断面にパターンを付与することにより、パターンの形成された放射線ビームを生成することのできるパターン形成装置を支持するように構成された支持体と、
基板を保持するように構成された基板テーブルと、
パターンの形成された放射線ビームを基板のターゲット部分に投影するように構成された投影装置と、
放射線受容要素、前記放射線受容要素を支持する透過板、及び放射線検出手段を含む基板高さのセンサとを含むリソグラフィ装置において、
前記基板高さのセンサが、前記放射線受容要素と前記放射線検出手段の最終要素との間での放射線の損失を防止するように構成されるリソグラフィ装置が提供される。
少なくとも一部分が放射線感光材料の層で被覆された基板を提供する段階と、
放射線装置を用いて放射線の投影ビームを提供する段階と、
パターン形成手段を用いて投影ビームの断面にパターンを付与する段階と、
パターンの形成された放射線ビームを放射線感光材料の層のターゲット部分に投影する段階と、
放射線受容要素によって放射線を受け、放射線検出要素によって前記放射線を検出する基板高さのセンサを提供する段階と、
前記放射線受容要素と前記放射線検出手段の最終要素との間での放射線の損失を防止するための手段を提供する段階とを含むデバイス製造方法が提供される。
放射線ビーム(例えば、UV放射線又はDUV放射線)Bを調節するように構成された照明装置(照明器)ILと、
パターン形成装置(例えばマスク)MAを支持するように構成され、あるパラメータに従ってパターン形成装置を正確に位置決めするように構成された第1の位置決め装置PMに接続された支持構造体(例えばマスク・テーブル)MTと、
基板(例えばレジスト塗布ウェハ)Wを保持するように構成され、あるパラメータに従って基板を正確に位置決めするように構成された第2の位置決め装置PWに接続された基板テーブル(例えばウェハ・テーブル)WTと、
パターン形成装置MAによって放射線ビームBに与えられたパターンを、基板Wの(例えば1つ又は複数のダイを含む)ターゲット部分Cに投影するように構成された投影装置(例えば屈折投影レンズ装置)PSとを含む。
1.ステップ・モード
マスク・テーブルMT及び基板テーブルWTを本質的に静止した状態に保ち、それと同時に放射線ビームに与えられたパターン全体を1回でターゲット部分Cに投影する(すなわち、ただ1回の静止露光)。次いで、異なるターゲット部分Cを露光することができるように、基板テーブルWTをX方向及び/又はY方向に移動させる。ステップ・モードでは、露光フィールドの最大サイズによって1回の静止露光で結像されるターゲット部分Cのサイズが制限される。
2.走査モード
マスク・テーブルMT及び基板テーブルWTを同期して走査し、それと同時に放射線ビームに与えられたパターンをターゲット部分Cに投影する(すなわち、ただ1回の動的露光)。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投影装置PSの拡大(縮小)率、及び像の反転特性によって決定することができる。走査モードでは、露光フィールドの最大サイズによって1回の動的露光におけるターゲット部分の(非走査方向の)幅が制限され、走査運動の長さによってターゲット部分の(走査方向の)高さが決定される。
プログラム可能なパターン形成装置を保持しながらマスク・テーブルMTを本質的に静止した状態に保ち、基板テーブルWTを移動又は走査し、それと同時に放射線ビームに与えられたパターンをターゲット部分Cに投影する。このモードでは、一般にパルス式の放射線源が使用され、基板テーブルWTが移動するたびに、又は走査中の連続する放射線パルスの合間に、プログラム可能なパターン形成装置が必要に応じて更新される。この作動モードは、先に言及したタイプのプログラム可能ミラー・アレイなど、プログラム可能なパターン形成装置を利用するマスクのないリソグラフィに簡単に適用することができる。
BD ビーム発射装置
C ターゲット部分
IF 位置センサ
IL 照明器
IN 入口
M1、M2 マスク位置調整用マーク
MA パターン形成装置、マスク
MT 支持構造体、マスク・テーブル
OUT 出口
P1、P2 基板位置調整用マーク
PL 投影装置
PM、PW 位置決め装置
SO 放射線源
W 基板
WT 基板テーブル
2 放射線受容要素
3 空隙
4 透過板
6 量子変換層
8 放射線検出要素、カメラ
10 基板
12 スペーサ
14 ボンディング・ワイヤ
16 充填シート
18 放射線受容要素、溝
20 センサ本体
22 ルミネセンス層、発光材料、蛍光体
24 放射線検出要素、フォトダイオード、光電池
25 センサ・ハウジング
30 充填シート、回折レンズ
34 微小レンズ配列
38 フォトダイオード
40 放射線検出要素、ダイオード、微小レンズ、光電池
Claims (18)
- 放射線ビームを調整するように構成された照明装置と、
放射線ビームの断面にパターンを付与することにより、パターンの形成された放射線ビームを生成することのできるパターン形成装置を支持するように構成された支持体と、
基板を保持するように構成された基板テーブルと、
パターンの形成された放射線ビームを基板のターゲット部分に投影するように構成された投影装置と、
放射線受容要素、該放射線受容要素を支持する透過板、及び放射線検出手段を含む基板高さのセンサとを含むリソグラフィ装置であって、
前記基板高さのセンサが1つ又は複数の透過性充填シートを有することにより、前記放射線受容要素と前記放射線検出手段の最終要素との間での放射線の損失を軽減するように構成されていることを特徴とするリソグラフィ装置。 - 前記1つ又は複数の充填シートが、前記放射線受容要素と前記放射線検出手段の最終要素との間に空隙が生じることを防止するように構成されている請求項1に記載されたリソグラフィ装置。
- 前記充填シートのそれぞれが、それを通過する放射線の主要な波長に対して透過性を有するように構成されている請求項1又は請求項2に記載されたリソグラフィ装置。
- 前記充填シートのそれぞれが、周囲の媒体との屈折率の適合性を最大にするように構成されている請求項1から請求項3までのいずれか1項に記載されたリソグラフィ装置。
- 前記充填シートが、光学的に粗い構成要素の界面に接触するように配置され、その表面の粗い外形に追従するように処理される請求項1から請求項4までのいずれか1項に記載されたリソグラフィ装置。
- 前記充填シートの処理が、機械的圧縮又は加熱による変形を含む請求項5に記載されたリソグラフィ装置。
- 放射線ビームを調整するように構成された照明装置と、
放射線ビームの断面にパターンを付与することにより、パターンの形成された放射線ビームを生成することのできるパターン形成装置を支持するように構成された支持体と、
基板を保持するように構成された基板テーブルと、
パターンの形成された放射線ビームを基板のターゲット部分に投影するように構成された投影装置と、
放射線受容要素、該放射線受容要素を支持する透過板、及び放射線検出手段を含む基板高さのセンサとを含むリソグラフィ装置であって、
前記透過板が、前記放射線受容要素と前記放射線検出要素との間の空隙を除去するように前記放射線受容要素から前記放射線検出要素へと連続的に拡張されている請求項1に記載されたリソグラフィ装置。 - 前記基板高さのセンサの光学成分の1つ又は複数が、その側面外側に内部反射を高めるための層を含む請求項1から請求項7までのいずれか1項に記載されたリソグラフィ装置。
- 前記内部反射を高めるための層が、金属被覆と共に、前記側面外側の粗面化された領域を含む請求項8に記載されたリソグラフィ装置。
- 前記充填シートが、前記投影装置の最終要素と前記基板との間の空間の少なくとも一部分を満たす浸漬液の屈折率以上の屈折率を有する請求項1から請求項6までのいずれか1項に記載されたリソグラフィ装置。
- 前記放射線検出要素が光電池を含む、又はルミネセンス層と共に光電池を含む請求項1から請求項10までのいずれか1項に記載されたリソグラフィ装置。
- 前記放射線検出要素が、DUV放射線を直接検出するように適合された光電池を含む請求項1から請求項10までのいずれか1項に記載されたリソグラフィ装置。
- 前記放射線受容要素と前記放射線検出要素の最終要素との間の空隙の厚さが、該空隙のそれぞれを通過すると予想される放射線の主要な波長より小さい請求項1に記載されたリソグラフィ装置。
- 前記放射線受容要素が、回折格子、又はピンホールを有する要素である請求項1から請求項13までのいずれか1項に記載されたリソグラフィ装置。
- 前記充填シートが、屈折率の異なる2つの層を有し、前記2つの層の界面に微小レンズ配列が形成されている請求項1から請求項6までのいずれか1項に記載されたリソグラフィ装置。
- 前記放射線受容要素と前記放射線検出要素との間に配置された回折レンズをさらに含む請求項1から請求項15までのいずれか1項に記載されたリソグラフィ装置。
- 前記放射線受容要素と前記放射線検出要素との間に配置された微小レンズをさらに含む請求項1から請求項16までのいずれか1項に記載されたリソグラフィ装置。
- 少なくとも一部分が放射線感光材料の層で被覆された基板を提供する段階と、
放射線装置を用いて放射線の投影ビームを提供する段階と、
パターン形成手段を用いて前記投影ビームの断面にパターンを付与する段階と、
パターンの形成された放射線ビームを放射線感光材料の層のターゲット部分に投影する段階と、
放射線受容要素によって放射線を受け、放射線検出要素によって前記放射線を検出する基板高さのセンサを提供する段階と、
前記放射線受容要素と前記放射線検出手段の最終要素との間に放射線の損失を軽減する1つ又は複数の透過性充填シートを提供する段階と、を含むことを特徴とするデバイス製造方法。
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US (8) | US7907255B2 (ja) |
JP (1) | JP4155954B2 (ja) |
KR (1) | KR100614293B1 (ja) |
CN (1) | CN100468200C (ja) |
SG (1) | SG109608A1 (ja) |
TW (1) | TWI263859B (ja) |
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DE10261775A1 (de) * | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP1857880B1 (en) | 2003-04-09 | 2015-09-16 | Nikon Corporation | Exposure method and apparatus and device manufacturing method |
SG10201404132YA (en) * | 2003-04-11 | 2014-09-26 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20180112884A (ko) | 2003-06-13 | 2018-10-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
TWI536430B (zh) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2466383B1 (en) * | 2003-07-08 | 2014-11-19 | Nikon Corporation | Wafer table for immersion lithography |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
KR101419192B1 (ko) * | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2005029559A1 (ja) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP5136566B2 (ja) * | 2003-09-29 | 2013-02-06 | 株式会社ニコン | 露光装置及び露光方法並びにデバイス製造方法 |
TWI497565B (zh) | 2003-09-29 | 2015-08-21 | 尼康股份有限公司 | An exposure apparatus and an exposure method, and an element manufacturing method |
JP4515209B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
TWI360158B (en) | 2003-10-28 | 2012-03-11 | Nikon Corp | Projection exposure device,exposure method and dev |
EP3392713A1 (en) | 2003-10-31 | 2018-10-24 | Nikon Corporation | Immersion exposure apparatus and method |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
KR101394764B1 (ko) * | 2003-12-03 | 2014-05-27 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
KR101941351B1 (ko) | 2003-12-15 | 2019-01-22 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
JPWO2005057635A1 (ja) * | 2003-12-15 | 2007-07-05 | 株式会社ニコン | 投影露光装置及びステージ装置、並びに露光方法 |
US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US7990516B2 (en) | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
TWI505329B (zh) | 2004-02-06 | 2015-10-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
JP4018647B2 (ja) * | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
CN1950929B (zh) * | 2004-03-25 | 2011-05-25 | 株式会社尼康 | 曝光装置及曝光方法、以及组件制造方法 |
JP4845880B2 (ja) | 2004-06-04 | 2011-12-28 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学結像系の像品質測定システム |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
JP2006228930A (ja) | 2005-02-17 | 2006-08-31 | Canon Inc | 測定装置及びそれを搭載した露光装置 |
US7282701B2 (en) * | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101455551B1 (ko) | 2005-05-12 | 2014-10-27 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US7268357B2 (en) * | 2005-05-16 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and method |
JP2006339448A (ja) * | 2005-06-02 | 2006-12-14 | Canon Inc | 受光ユニットを有する露光装置 |
JP4708876B2 (ja) * | 2005-06-21 | 2011-06-22 | キヤノン株式会社 | 液浸露光装置 |
US7583358B2 (en) * | 2005-07-25 | 2009-09-01 | Micron Technology, Inc. | Systems and methods for retrieving residual liquid during immersion lens photolithography |
US8054445B2 (en) * | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7456928B2 (en) * | 2005-08-29 | 2008-11-25 | Micron Technology, Inc. | Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography |
JP4125315B2 (ja) * | 2005-10-11 | 2008-07-30 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US8011915B2 (en) | 2005-11-04 | 2011-09-06 | Asml Netherlands B.V. | Imprint lithography |
US7878791B2 (en) * | 2005-11-04 | 2011-02-01 | Asml Netherlands B.V. | Imprint lithography |
US20070115452A1 (en) * | 2005-11-23 | 2007-05-24 | Asml Netherlands B.V. | Method of measuring the magnification of a projection system, device manufacturing method and computer program product |
US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
US7459669B2 (en) * | 2005-12-30 | 2008-12-02 | Asml Netherlands B.V. | Sensor and lithographic apparatus |
US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8472004B2 (en) * | 2006-01-18 | 2013-06-25 | Micron Technology, Inc. | Immersion photolithography scanner |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007266504A (ja) * | 2006-03-29 | 2007-10-11 | Canon Inc | 露光装置 |
EP2535744A3 (en) * | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
US7388652B2 (en) * | 2006-06-15 | 2008-06-17 | Asml Netherlands B.V. | Wave front sensor with grey filter and lithographic apparatus comprising same |
US8013977B2 (en) * | 2006-07-17 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor |
JP2008147577A (ja) * | 2006-12-13 | 2008-06-26 | Canon Inc | 露光装置及びデバイス製造方法 |
US8975599B2 (en) * | 2007-05-03 | 2015-03-10 | Asml Netherlands B.V. | Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus |
US20090002656A1 (en) * | 2007-06-29 | 2009-01-01 | Asml Netherlands B.V. | Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus |
US7708289B2 (en) * | 2007-09-07 | 2010-05-04 | Jaime Sr Richard A | Removable tubular variable lighting system for a skateboard |
US8681308B2 (en) | 2007-09-13 | 2014-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100535761C (zh) * | 2007-10-11 | 2009-09-02 | 上海微电子装备有限公司 | 光刻装置的传感器 |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
NL1036279A1 (nl) * | 2007-12-13 | 2009-06-16 | Asml Netherlands Bv | A device for transmission image detection for use in a lithographic projection apparatus and a method for determining third order distortions of a patterning device and/or a projection system of such a lithographic apparatus. |
NL1036898A1 (nl) * | 2008-05-21 | 2009-11-24 | Asml Netherlands Bv | Substrate table, sensor and method. |
EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
NL2003575A (en) * | 2008-10-29 | 2010-05-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2004322A (en) | 2009-04-13 | 2010-10-14 | Asml Netherlands Bv | Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement. |
NL2004242A (en) * | 2009-04-13 | 2010-10-14 | Asml Netherlands Bv | Detector module, cooling arrangement and lithographic apparatus comprising a detector module. |
NL2004888A (en) * | 2009-06-29 | 2010-12-30 | Asml Netherlands Bv | Deposition method and apparatus. |
JP2011166013A (ja) * | 2010-02-12 | 2011-08-25 | Nikon Corp | 光検出装置、光学特性計測装置、光学特性計測方法、露光装置、及び露光方法、及びデバイスの製造方法 |
US9389519B2 (en) | 2010-02-25 | 2016-07-12 | Nikon Corporation | Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method |
US10095129B2 (en) | 2014-07-04 | 2018-10-09 | Asml Netherlands B.V. | Lithographic apparatus and a method of manufacturing a device using a lithographic apparatus |
US11275312B1 (en) | 2020-11-30 | 2022-03-15 | Waymo Llc | Systems and methods for verifying photomask cleanliness |
CN116263565A (zh) * | 2021-12-13 | 2023-06-16 | 长鑫存储技术有限公司 | 光刻胶图案的形成方法和投影式曝光装置 |
Family Cites Families (250)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE206607C (ja) | ||||
DE242880C (ja) | ||||
DE224448C (ja) | ||||
DE221563C (ja) | ||||
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
JPS5919912Y2 (ja) | 1978-08-21 | 1984-06-08 | 清水建設株式会社 | 複合熱交換器 |
ATE1462T1 (de) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS57153433U (ja) | 1981-03-20 | 1982-09-27 | ||
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
DE3318980C2 (de) * | 1982-07-09 | 1986-09-18 | Perkin-Elmer Censor Anstalt, Vaduz | Vorrichtung zum Justieren beim Projektionskopieren von Masken |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6032014A (ja) * | 1983-08-01 | 1985-02-19 | Minolta Camera Co Ltd | カメラの焦点検出装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS61113376A (ja) | 1984-11-07 | 1986-05-31 | Sony Corp | テレビジヨン信号の動き検出装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS6265326U (ja) | 1985-10-16 | 1987-04-23 | ||
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS62156860A (ja) | 1985-12-28 | 1987-07-11 | Toshiba Corp | 固体撮像装置 |
JPS62121417U (ja) | 1986-01-24 | 1987-08-01 | ||
JPS62156860U (ja) | 1986-03-26 | 1987-10-05 | ||
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPS63157419U (ja) | 1987-03-31 | 1988-10-14 | ||
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
NL9000503A (nl) | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JP3521544B2 (ja) | 1995-05-24 | 2004-04-19 | 株式会社ニコン | 露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
EP0844503A4 (en) * | 1995-08-03 | 1999-01-13 | Matsushita Electric Ind Co Ltd | OPTICAL DEVICE AND MANUFACTURING METHOD |
US5798838A (en) * | 1996-02-28 | 1998-08-25 | Nikon Corporation | Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3447510B2 (ja) | 1997-04-09 | 2003-09-16 | Necエレクトロニクス株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
JPH10284414A (ja) | 1997-04-10 | 1998-10-23 | Nikon Corp | 結像位置検出装置及び半導体デバイスの製造方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US6381013B1 (en) | 1997-06-25 | 2002-04-30 | Northern Edge Associates | Test slide for microscopes and method for the production of such a slide |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6563565B2 (en) * | 1997-08-27 | 2003-05-13 | Nikon Corporation | Apparatus and method for projection exposure |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
AU2184799A (en) * | 1998-01-29 | 1999-08-16 | Nikon Corporation | Illumination meter and exposure system |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000068491A (ja) | 1998-08-24 | 2000-03-03 | Nikon Corp | 撮像素子、撮像素子の製造方法および露光装置 |
US6727980B2 (en) * | 1998-09-17 | 2004-04-27 | Nikon Corporation | Apparatus and method for pattern exposure and method for adjusting the apparatus |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
AU6022400A (en) | 1999-07-23 | 2001-02-13 | Nikon Corporation | Exposure method, exposure system, light source, and method of device manufacture |
DE69930398T2 (de) | 1999-09-20 | 2006-10-19 | Nikon Corp. | Belichtungssystem mit einem parallelen Verbindungsmechanismus und Belichtungsverfahren |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
US6568594B1 (en) * | 1999-12-15 | 2003-05-27 | Koninklijke Philips Electronics N.V. | Optical scanning device |
JP2001176118A (ja) * | 1999-12-15 | 2001-06-29 | Minolta Co Ltd | 光ヘッド、記録再生装置、および固浸レンズ |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
TW550377B (en) | 2000-02-23 | 2003-09-01 | Zeiss Stiftung | Apparatus for wave-front detection |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
US6721389B2 (en) | 2000-08-25 | 2004-04-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
EP1182511B1 (en) | 2000-08-25 | 2006-02-01 | ASML Netherlands B.V. | Lithographic apparatus |
EP1184727A1 (en) | 2000-09-01 | 2002-03-06 | Asm Lithography B.V. | Lithographic apparatus |
JP2002170754A (ja) | 2000-11-30 | 2002-06-14 | Nikon Corp | 露光装置、光学特性検出方法及び露光方法 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6897941B2 (en) * | 2001-11-07 | 2005-05-24 | Applied Materials, Inc. | Optical spot grid array printer |
US7474424B2 (en) | 2002-01-07 | 2009-01-06 | Canon Kabushiki Kaisha | Image forming apparatus, method of controlling the image forming apparatus in order to process a duplex printing sequence, program, and storage medium |
US6813431B2 (en) * | 2002-02-26 | 2004-11-02 | Intel Corporation | Integrated photodevice and waveguide |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US6828542B2 (en) * | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
JP2005536775A (ja) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
CN101470360B (zh) * | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60319658T2 (de) | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
JP2004301825A (ja) | 2002-12-10 | 2004-10-28 | Nikon Corp | 面位置検出装置、露光方法、及びデバイス製造方法 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
WO2004053950A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2004053955A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
CN1717776A (zh) | 2002-12-10 | 2006-01-04 | 株式会社尼康 | 光学元件及使用该光学元件的投影曝光装置 |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
KR101101737B1 (ko) | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
US20040119964A1 (en) | 2002-12-18 | 2004-06-24 | Nikon Corporation | Double isolation fine stage |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
CN1316482C (zh) | 2002-12-19 | 2007-05-16 | 皇家飞利浦电子股份有限公司 | 照射层上斑点的方法和装置 |
EP1584089B1 (en) | 2002-12-19 | 2006-08-02 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP2004251764A (ja) * | 2003-02-20 | 2004-09-09 | Tokyo Seimitsu Co Ltd | 電子ビーム像用tdiセンサ及びマスク検査装置 |
US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101364928B1 (ko) | 2003-04-10 | 2014-02-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
US20040202429A1 (en) * | 2003-04-10 | 2004-10-14 | Lambda Crossing Ltd. | Planar optical component for coupling light to a high index waveguide, and method of its manufacture |
WO2004093160A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
SG10201404132YA (en) | 2003-04-11 | 2014-09-26 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101597475B1 (ko) | 2003-04-11 | 2016-02-24 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
KR20050122269A (ko) | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
TW200509205A (en) * | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4046334B2 (ja) | 2003-06-18 | 2008-02-13 | 臼井国際産業株式会社 | コモンレール用分岐接続体の接続構造 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
SG109000A1 (en) * | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7145643B2 (en) * | 2003-08-07 | 2006-12-05 | Asml Netherlands B.V. | Interface unit, lithographic projection apparatus comprising such an interface unit and a device manufacturing method |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE20313678U1 (de) * | 2003-09-01 | 2004-02-19 | Leica Microsystems Wetzlar Gmbh | Mikroskop |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) * | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2005093948A (ja) | 2003-09-19 | 2005-04-07 | Nikon Corp | 露光装置及びその調整方法、露光方法、並びにデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
EP1519230A1 (en) * | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI497565B (zh) * | 2003-09-29 | 2015-08-21 | 尼康股份有限公司 | An exposure apparatus and an exposure method, and an element manufacturing method |
EP1519231B1 (en) * | 2003-09-29 | 2005-12-21 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
EP1700163A1 (en) | 2003-12-15 | 2006-09-13 | Carl Zeiss SMT AG | Objective as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
JP5420821B2 (ja) * | 2004-01-14 | 2014-02-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 反射屈折投影対物レンズ |
KR101230757B1 (ko) | 2004-01-16 | 2013-02-06 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
CN1938646B (zh) | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US8852850B2 (en) | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
CN101727021A (zh) | 2004-02-13 | 2010-06-09 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
EP1721201A1 (en) | 2004-02-18 | 2006-11-15 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
JP5769356B2 (ja) | 2004-05-17 | 2015-08-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 中間像を有するカタジオプトリック投影対物レンズ |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4845880B2 (ja) | 2004-06-04 | 2011-12-28 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学結像系の像品質測定システム |
KR101199076B1 (ko) | 2004-06-04 | 2012-11-07 | 칼 짜이스 에스엠티 게엠베하 | 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 |
DE102005003905B4 (de) | 2005-01-27 | 2007-04-12 | Infineon Technologies Ag | Anordnung zur Projektion eines Musters in eine Bildebene |
US7282701B2 (en) * | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
DE102006036671A1 (de) | 2006-08-03 | 2008-02-07 | Dürr Assembly Products GmbH | Verfahren zur Bestimmung der Achsgeometrie eines Fahrzeugs |
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US20160209761A1 (en) | 2016-07-21 |
US8035798B2 (en) | 2011-10-11 |
KR100614293B1 (ko) | 2006-08-21 |
US20070132971A1 (en) | 2007-06-14 |
US20180314169A1 (en) | 2018-11-01 |
CN100468200C (zh) | 2009-03-11 |
US9316919B2 (en) | 2016-04-19 |
JP2005079587A (ja) | 2005-03-24 |
US20050078287A1 (en) | 2005-04-14 |
US10514618B2 (en) | 2019-12-24 |
US8947637B2 (en) | 2015-02-03 |
US10025204B2 (en) | 2018-07-17 |
US11003096B2 (en) | 2021-05-11 |
US20170153556A1 (en) | 2017-06-01 |
TWI263859B (en) | 2006-10-11 |
US20200124990A1 (en) | 2020-04-23 |
US7907255B2 (en) | 2011-03-15 |
US20110317143A1 (en) | 2011-12-29 |
US20150116683A1 (en) | 2015-04-30 |
US9568841B2 (en) | 2017-02-14 |
CN1591196A (zh) | 2005-03-09 |
KR20050021871A (ko) | 2005-03-07 |
SG109608A1 (en) | 2005-03-30 |
TW200513788A (en) | 2005-04-16 |
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