JP4150401B2 - Double-sided wiring board - Google Patents

Double-sided wiring board Download PDF

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JP4150401B2
JP4150401B2 JP2006053409A JP2006053409A JP4150401B2 JP 4150401 B2 JP4150401 B2 JP 4150401B2 JP 2006053409 A JP2006053409 A JP 2006053409A JP 2006053409 A JP2006053409 A JP 2006053409A JP 4150401 B2 JP4150401 B2 JP 4150401B2
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insulating layer
layer
conductor
wiring
double
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JP2006148172A (en
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俊樹 内藤
佳史 篠木
大介 宇圓田
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Nitto Denko Corp
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Description

本発明は、絶縁層の両面に導体配線が形成された両面配線基板であって、特に、フレキシブル配線基板として好適な両面配線基板に関する。   The present invention relates to a double-sided wiring board in which conductor wiring is formed on both sides of an insulating layer, and more particularly to a double-sided wiring board suitable as a flexible wiring board.

従来の両面配線基板は、一般的には、図６に示すような方法によって製造されている。すなわち、図６（ａ）に示すように、ポリイミド等の絶縁層６１の両面に銅箔等の導体層６２が形成されたプリント基板材料６を用い、図６（ｂ）に示すように、当該材料６に対して、レーザや金型等を用いた穿孔、化学的な溶解、或いはこれらを併用する方法等によって、貫通孔６３を形成する。次に、図６（ｃ）に示すように、貫通孔６３の壁面に、薬液処理や、蒸着、スパッタ等の方法によって導電性の薄膜層６４を形成する。次に、図６（ｄ）に示すように、薄膜層６４上を含む基板材料６の表裏面全体に、電解めっきによって銅等からなる導体層６５を形成する。さらに、図６（ｅ）に示すように、導体層６５を感光性の皮膜６６で被覆した後、図６（ｆ）に示すように、所定の導体配線パターンに対応する箇所を露光・解像して、耐薬液性を有する皮膜６７にした後、当該皮膜６７で被覆されていない導体層６５及び導体層６２を薬液により化学的に溶解する。最後に、図６（ｇ）に示すように、皮膜６７を除去することにより、両面配線基板６０が製造される。   Conventional double-sided wiring boards are generally manufactured by a method as shown in FIG. That is, as shown in FIG. 6A, using a printed circuit board material 6 in which a conductor layer 62 such as copper foil is formed on both surfaces of an insulating layer 61 such as polyimide, as shown in FIG. The through-hole 63 is formed in the material 6 by drilling using a laser, a mold, or the like, chemical dissolution, or a method using these in combination. Next, as shown in FIG. 6C, a conductive thin film layer 64 is formed on the wall surface of the through-hole 63 by a chemical treatment, vapor deposition, sputtering, or the like. Next, as shown in FIG. 6D, a conductor layer 65 made of copper or the like is formed on the entire front and back surfaces of the substrate material 6 including the thin film layer 64 by electrolytic plating. Further, as shown in FIG. 6 (e), after the conductor layer 65 is covered with a photosensitive film 66, a portion corresponding to a predetermined conductor wiring pattern is exposed and resolved as shown in FIG. 6 (f). Then, after forming the film 67 having chemical resistance, the conductor layer 65 and the conductor layer 62 that are not covered with the film 67 are chemically dissolved by the chemical solution. Finally, as shown in FIG. 6G, the double-sided wiring board 60 is manufactured by removing the film 67.

つまり、上述した従来の両面配線基板６０の製造方法は、絶縁層６１の両面に形成された導体層６２の内、導体配線パターンとして不要な部分を取り除く、所謂サブトラクティブ工法が用いられている。   That is, the above-described conventional method for manufacturing the double-sided wiring board 60 uses a so-called subtractive method of removing unnecessary portions as a conductor wiring pattern from the conductor layer 62 formed on both surfaces of the insulating layer 61.

しかしながら、近年の両面配線基板においては、配線の高密度化や微細化の要求が高まり、これまで行われていたサブトラクティブ工法による配線形成では、前記要求への対応が困難な状況になりつつある。より具体的には、サブトラクティブ工法の場合、前述のように、所定の導体配線パターンに対応する箇所を露光・解像して得られた耐薬液性を有する皮膜６７をマスクとし、薬液を用いて導体層６５及び導体層６２を溶解することにより、導体配線が形成される。この方法では、微細配線や高密度配線の場合に、溶解用薬液の液回りが悪く、溶解速度が配線幅や間隙幅によって大きく異なることになるため、均一な配線が形成され難いという問題を有する。また、導体層６５及び導体層６２の表層の配線幅と底面の配線幅との差異が大きくなり易いという問題を有する。   However, in recent double-sided wiring boards, there is an increasing demand for higher density and miniaturization of wiring, and it is becoming difficult to meet the above demands by wiring formation by the subtractive method that has been performed so far. . More specifically, in the case of the subtractive method, as described above, a chemical solution is used with the film 67 having a chemical resistance obtained by exposing and resolving a portion corresponding to a predetermined conductor wiring pattern as a mask. Then, the conductor wiring 65 is formed by dissolving the conductor layer 65 and the conductor layer 62. In this method, in the case of fine wiring or high-density wiring, there is a problem that it is difficult to form a uniform wiring because the dissolution of the chemical solution for dissolution is poor and the dissolution rate varies greatly depending on the wiring width and gap width. . Further, there is a problem that the difference between the wiring width of the surface layer of the conductor layer 65 and the conductor layer 62 and the wiring width of the bottom surface tends to be large.

一方、前述したサブトラクティブ工法とは異なり、絶縁基板材料上に電解めっき等により導体配線を形成するアディティブ工法も知られている。しかしながら、特にフレキシブル配線基板の場合、前記絶縁基板材料が可撓性を有するフィルム状になることから、長尺搬送の場合、搬送張力によって前記絶縁基板材料に必然的に生じる応力が無視できない程に大きくなり、その結果、寸法安定性が低下したり、カールが生じ易いという問題がある。また、電解めっきにより導体配線を形成する場合、導体配線が電解析出金属となるため、折り曲げ特性等の屈曲特性が劣化し、十分な屈曲特性を必要とする両面配線基板の製造方法には適さないという問題もある。   On the other hand, unlike the subtractive method described above, an additive method is also known in which conductor wiring is formed on an insulating substrate material by electrolytic plating or the like. However, especially in the case of a flexible wiring board, the insulating substrate material is in the form of a flexible film. Therefore, in the case of long conveyance, the stress that is inevitably generated in the insulating substrate material due to conveyance tension cannot be ignored. As a result, there is a problem that dimensional stability is lowered and curling is likely to occur. In addition, when conductor wiring is formed by electrolytic plating, since the conductor wiring becomes an electrodeposited metal, the bending characteristics such as the bending characteristics deteriorate, and it is suitable for the manufacturing method of a double-sided wiring board that requires sufficient bending characteristics. There is also a problem of not.

本発明は、斯かる従来技術の問題点を解決するべくなされたもので、高密度・微細配線に対応できる一方、フレキシブル配線基板に適用した場合には、寸法安定性を具備し、カールが生じ難く、且つ屈曲用途にも使用可能な両面配線基板を提供することを課題とする。   The present invention has been made to solve such problems of the prior art, and can deal with high density and fine wiring. On the other hand, when applied to a flexible wiring board, it has dimensional stability and curls. It is an object to provide a double-sided wiring board that is difficult and can be used for bending.

前記課題を解決すべく本発明は、第１導体層の一方の面に第１絶縁層が形成された基板材料に対して、前記第１絶縁層の所定部位から、前記第１絶縁層のみを貫通する又は前記第１絶縁層及び前記第１導体層の両方を貫通する導通孔を形成する第１ステップと、前記第１絶縁層の表面及び前記導通孔の壁面に導電性薄膜層を形成する第２ステップと、前記導電性薄膜層上の所定部位に第２絶縁層を形成すると共に前記第１導体層の他方の面上の所定部位又は全面に絶縁層を形成する第３ステップと、前記導電性薄膜層上の前記第２絶縁層が形成されていない部位に、めっきによって第１導体配線を形成する第４ステップと、前記第１導体配線を耐薬液性を有する皮膜で被覆する第５ステップと、前記第２絶縁層と絶縁層とが対向する部位が、前記第１導体層と第１絶縁層のみで構成されるように、前記第１導体層の他方の面を化学的に溶解させることにより、第２導体配線を形成する第６ステップと、前記第２絶縁層及び前記皮膜を除去する第７ステップとにより製造されることを特徴とする両面配線基板を提供するものである。
In order to solve the above problems, the present invention provides a substrate material having a first insulating layer formed on one surface of a first conductor layer, and only the first insulating layer is formed from a predetermined portion of the first insulating layer. A first step of forming a conduction hole penetrating or penetrating both the first insulating layer and the first conductor layer; and forming a conductive thin film layer on a surface of the first insulating layer and a wall surface of the conduction hole. A second step, a third step of forming a second insulating layer at a predetermined portion on the conductive thin film layer and forming an insulating layer on the predetermined portion or the entire surface of the other surface of the first conductor layer ; A fourth step of forming a first conductor wiring by plating on a portion of the conductive thin film layer where the second insulating layer is not formed, and a fifth step of covering the first conductor wiring with a film having chemical resistance and step portion and the second insulating layer and the insulating layer are opposite, Serial to consist only of the first conductive layer and the first insulating layer, by chemically dissolving the other surface of the first conductor layer, and a sixth step of forming a second conductor wiring, the second The invention provides a double-sided wiring board manufactured by two insulating layers and a seventh step of removing the film.

斯かる発明によれば、めっきによって第１導体配線が形成されるため、当該第１導体配線は、高密度・微細配線の要求に対応することが可能である。つまり、配線幅や間隙幅の影響を受けることなく均一な第１導体配線を形成することができ、且つ、表層の配線幅と底面の配線幅の差異を極めて小さくすることが可能である。なお、第２導体配線自体は、第１導体層の他方の面の所定部位を薬液によって化学的に溶解し取り除く所謂サブトラクティブ工法によって形成されるため、高密度・微細配線に対応し難いことになるが、第２導体配線から、導通孔を介して、第１導体配線に配線の引き回しをなし得るため、製造される両面配線基板全体としては、高密度・微細配線の要求に対応することが可能である。   According to such an invention, since the first conductor wiring is formed by plating, the first conductor wiring can meet the demand for high density and fine wiring. That is, a uniform first conductor wiring can be formed without being affected by the wiring width and the gap width, and the difference between the wiring width on the surface layer and the wiring width on the bottom surface can be made extremely small. Note that the second conductor wiring itself is formed by a so-called subtractive method in which a predetermined portion of the other surface of the first conductor layer is chemically dissolved and removed by a chemical solution, so that it is difficult to cope with high density and fine wiring. However, since the wiring can be routed from the second conductor wiring to the first conductor wiring through the conduction hole, the entire double-sided wiring board to be manufactured can meet the demand for high density and fine wiring. Is possible.

また、本発明に係る両面配線基板をフレキシブル配線基板に適用した場合であっても、めっきによって第１導体配線を形成する第４ステップの段階で、既に第１絶縁層（この場合には可撓性を有するフィルム状の絶縁層となる）に第１導体層が形成されているため、長尺搬送の場合における搬送張力の影響を大きく低減することができ、その結果、寸法安定性を具備し、カールの生じ難い両面配線基板を得ることが可能である。つまり、一般的に、絶縁層に比べて導体層は高弾性であるため、前記第１の導体層の存在により、基板材料に生じる応力を分散乃至緩和させることができ、搬送張力の影響を大きく低減することが可能である。   Further, even when the double-sided wiring board according to the present invention is applied to a flexible wiring board, the first insulating layer (in this case flexible) is already formed in the fourth step of forming the first conductor wiring by plating. Since the first conductor layer is formed on the insulating layer in the form of a film having the property, the influence of the conveyance tension in the case of long conveyance can be greatly reduced, and as a result, dimensional stability is achieved. Thus, it is possible to obtain a double-sided wiring board that hardly causes curling. In other words, since the conductor layer is generally more elastic than the insulating layer, the presence of the first conductor layer can disperse or relieve the stress generated in the substrate material, and greatly affects the transport tension. It is possible to reduce.

さらに、折り曲げ特性等の屈曲特性を必要とする部位には、第２絶縁層を形成し、めっきによる第１導体配線が形成されないようにすることにより、十分な屈曲特性を得ることが可能である。
Furthermore, it is possible to obtain sufficient bending characteristics by forming a second insulating layer in a portion that requires bending characteristics such as bending characteristics so that the first conductor wiring by plating is not formed. The

以上に説明した本発明に係る両面配線基板によれば、電解めっきによって第１導体配線が形成されるため、当該第１導体配線側に半導体素子等を搭載することにより、高密度・微細配線の要求に対応することが可能である。つまり、配線幅や間隙幅の影響を受けることなく均一な第１導体配線を形成することができ、且つ、表層の配線幅と底面の配線幅の差異を極めて小さくすることが可能である。また、本発明に係る両面配線基板をフレキシブル配線基板に適用した場合であっても、電解めっきによって第１導体配線を形成する段階で、既に第１絶縁層に第１導体層が形成されているため、長尺工程における搬送張力の影響を大きく低減することができ、その結果、寸法安定性を具備し、カールの生じ難い両面配線基板を得ることが可能である。   According to the double-sided wiring board according to the present invention described above, since the first conductor wiring is formed by electrolytic plating, by mounting a semiconductor element or the like on the first conductor wiring side, high-density / fine wiring It is possible to respond to requests. That is, a uniform first conductor wiring can be formed without being affected by the wiring width and the gap width, and the difference between the wiring width on the surface layer and the wiring width on the bottom surface can be made extremely small. Further, even when the double-sided wiring board according to the present invention is applied to a flexible wiring board, the first conductor layer is already formed on the first insulating layer at the stage of forming the first conductor wiring by electrolytic plating. Therefore, it is possible to greatly reduce the influence of the conveyance tension in the long process, and as a result, it is possible to obtain a double-sided wiring board that has dimensional stability and hardly causes curling.

さらに、折り曲げ特性等の屈曲特性を必要とする部位には、第２絶縁層を形成し、めっきによる第１導体配線が形成されないようにすることにより、十分な屈曲特性を得ることが可能である。
Furthermore, it is possible to obtain sufficient bending characteristics by forming a second insulating layer in a portion that requires bending characteristics such as bending characteristics so that the first conductor wiring by plating is not formed. The

以下、添付図面を参照しつつ、本発明の実施形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

（参考形態）
図１は、本発明の参考形態に係る両面配線基板の製造方法を示す説明図である。図１（ａ）に示すように、本参考形態に係る両面配線基板の製造方法では、第１導体層１１の一方の面に第１絶縁層１２が形成された基板材料１が用いられる。ここで、第１導体層１１としては、銅箔、銅合金、ステンレス、ニッケル等の薬液により加工が可能な金属又は金属箔を使用するのが好ましく、その厚みは、通常１〜１００μｍ、好ましくは３〜３０μｍとされる。また、第１絶縁層１２としては、ポリイミド系樹脂等の耐薬品性、耐熱性、高寸法安定性に優れた樹脂を使用するのが好ましく、その厚みは、通常３〜２００μｍ、好ましくは５〜１００μｍとされる。 (Reference form)
FIG. 1 is an explanatory view showing a method for manufacturing a double-sided wiring board according to a reference embodiment of the present invention. As shown in FIG. 1A, in the method for manufacturing a double-sided wiring board according to the present embodiment, a substrate material 1 in which a first insulating layer 12 is formed on one surface of a first conductor layer 11 is used. Here, as the first conductor layer 11, it is preferable to use a metal or metal foil that can be processed by a chemical solution such as copper foil, copper alloy, stainless steel, nickel, and the thickness is usually 1 to 100 μm, preferably 3 to 30 μm. Further, as the first insulating layer 12, it is preferable to use a resin excellent in chemical resistance, heat resistance and high dimensional stability such as polyimide resin, and the thickness thereof is usually 3 to 200 μm, preferably 5 to 5 μm. 100 μm.

次に、図１（ｂ）に示すように、基板材料１に対して、第１絶縁層１２の所定部位から、第１絶縁層１２及び第１導体層１１の両方を貫通する導通孔１３が形成される。なお、導通孔１３の形成方法としては、レーザや金型等を用いた穿孔、薬液による溶解、感光性樹脂の使用等、公知の方法を使用することができ、導通孔１３の孔径は、通常１０〜５００μｍ、好ましくは３０〜３００μｍとされる。   Next, as shown in FIG. 1B, a conductive hole 13 penetrating both the first insulating layer 12 and the first conductor layer 11 from a predetermined portion of the first insulating layer 12 with respect to the substrate material 1 is formed. It is formed. In addition, as a method for forming the conduction hole 13, a known method such as drilling using a laser or a mold, dissolution with a chemical solution, use of a photosensitive resin, or the like can be used. The thickness is 10 to 500 μm, preferably 30 to 300 μm.

次に、図１（ｃ）に示すように、第１絶縁層１２の表面及び導通孔１３の壁面に導電性薄膜層１４が形成される。なお、導電性薄膜層１４としては、Ｎｉ、Ｃｒ、Ｃｕ、Ｎｉ／Ｃｒ合金、Ｃｕ／Ｎｉ合金、Ｔｉ、又はこれらの合金を使用するのが好ましく、より好ましくはＣｒ、Ｎｉ／Ｃｒ合金などのＣｒ系金属が使用され、その厚みは、通常３〜３０００Å、好ましくは５〜２０００Åとされる。また、導電性薄膜層１４は、単層に限らず、必要に応じて複数層を積層することも可能である。   Next, as shown in FIG. 1C, the conductive thin film layer 14 is formed on the surface of the first insulating layer 12 and the wall surface of the conduction hole 13. As the conductive thin film layer 14, it is preferable to use Ni, Cr, Cu, Ni / Cr alloy, Cu / Ni alloy, Ti, or an alloy thereof, more preferably Cr, Ni / Cr alloy or the like. A Cr-based metal is used, and its thickness is usually 3 to 3000 mm, preferably 5 to 2000 mm. Further, the conductive thin film layer 14 is not limited to a single layer, and a plurality of layers can be laminated as necessary.

次に、図１（ｄ）に示すように、導電性薄膜層１４上の所定部位に第２絶縁層１５が形成される。なお、第２絶縁層１５としては、耐電解めっき液性を有するものが使用され、その厚みは、後述する第１導体配線１６のめっき厚より大きくするのが好ましい。例えば、第１導体配線１６のめっき厚を１０μｍとする場合には、厚み１５μｍの第２絶縁層１５が形成される。また、第２絶縁層１５を後述する第１導体配線１６のパターンに相当する形状に加工するには、例えば、第２絶縁層１５として感光性の絶縁材料を使用し、当該絶縁材料の前記導体配線パターンに対応する部位を露光・解像した後、解像されなかった部位の絶縁材料を溶解すればよい。   Next, as shown in FIG. 1 (d), the second insulating layer 15 is formed at a predetermined position on the conductive thin film layer 14. In addition, as the 2nd insulating layer 15, what has electrolysis-plating-solution property is used, and it is preferable to make the thickness larger than the plating thickness of the 1st conductor wiring 16 mentioned later. For example, when the plating thickness of the first conductor wiring 16 is 10 μm, the second insulating layer 15 having a thickness of 15 μm is formed. In order to process the second insulating layer 15 into a shape corresponding to the pattern of the first conductor wiring 16 to be described later, for example, a photosensitive insulating material is used as the second insulating layer 15 and the conductor of the insulating material is used. After exposing and resolving the part corresponding to the wiring pattern, the insulating material of the part not resolved may be dissolved.

次に、図１（ｅ）に示すように、導電性薄膜層１４上の第２絶縁層１５が形成されていない部位に、電解めっきによって第１導体配線１６が形成される。ここで、本参考形態においては、導電性薄膜層１４が形成されていない第１導体層１１の他方の面にも、前記電解めっきによって導体層１６'が形成されることになる。なお、前記電解めっきは、例えば、電解硫酸銅めっき液中に基板材料１を浸漬し、印加することにより実施される。   Next, as shown in FIG.1 (e), the 1st conductor wiring 16 is formed by electrolytic plating in the site | part in which the 2nd insulating layer 15 on the electroconductive thin film layer 14 is not formed. Here, in the present embodiment, the conductor layer 16 ′ is also formed by the electrolytic plating on the other surface of the first conductor layer 11 where the conductive thin film layer 14 is not formed. The electrolytic plating is performed, for example, by immersing and applying the substrate material 1 in an electrolytic copper sulfate plating solution.

次に、図１（ｆ）に示すように、第１導体配線１６が、例えば、塩化第二鉄や塩化第二銅の酸に対する耐薬液性を有する皮膜１７で被覆される。ここで、皮膜１７としては、例えば感光性の絶縁材料が使用され、当該絶縁材料の全面を露光・解像することにより、耐薬液性を有する皮膜１７が形成される。なお、本参考形態では、導体層１６'上にも同様の皮膜１７'が形成されるが、皮膜１７'は、全面が露光・解像される皮膜１７と異なり、後述する第２導体配線１８パターンに対応する部位のみが露光・解像され、当該部位のみが耐薬液性を有することになる。また、皮膜１７'は、第２絶縁層１５と異なり、後述する第２導体配線１８をサブトラクティブ工法で形成する際の保護膜としての機能を奏するものであるため、表層の配線幅と底面の配線幅の差異を小さくする等の観点から、その厚みは薄いほど（例えば１５μｍ以下）好ましく、例えば液状のレジストを使用することにより形成される。   Next, as shown in FIG.1 (f), the 1st conductor wiring 16 is coat | covered with the membrane | film | coat 17 which has chemical resistance with respect to the acid of a ferric chloride or a cupric chloride, for example. Here, for example, a photosensitive insulating material is used as the film 17, and the film 17 having chemical resistance is formed by exposing and resolving the entire surface of the insulating material. In the present embodiment, the same film 17 ′ is formed on the conductor layer 16 ′. However, the film 17 ′ is different from the film 17 whose entire surface is exposed and resolved, and the second conductor wiring 18 described later. Only the part corresponding to the pattern is exposed and resolved, and only the part has chemical resistance. Further, unlike the second insulating layer 15, the film 17 ′ functions as a protective film when the second conductor wiring 18 described later is formed by the subtractive construction method. From the standpoint of reducing the difference in wiring width, etc., the thickness is preferably as thin as possible (for example, 15 μm or less). For example, it is formed by using a liquid resist.

次に、図１（ｇ）に示すように、第１導体層１１の他方の面の所定部位（本参考形態では皮膜１７'及び導体層１６'の所定部位も含む）を薬液によって化学的に溶解させ、第２導体配線１８が形成される。つまり、サブラクティブ工法によって第２導体配線１８が形成される。なお、本参考形態における導体層の溶解には、酸（例えば、塩化第二鉄や塩化第二銅）が使用される。   Next, as shown in FIG. 1 (g), a predetermined portion of the other surface of the first conductor layer 11 (including the predetermined portion of the film 17 ′ and the conductor layer 16 ′ in this embodiment) is chemically treated with a chemical solution. The second conductor wiring 18 is formed by melting. That is, the second conductor wiring 18 is formed by a subtractive method. An acid (for example, ferric chloride or cupric chloride) is used for dissolution of the conductor layer in the present embodiment.

次に、図１（ｈ）に示すように、皮膜１７、１７'及び第２絶縁層１５が除去される。なお、皮膜１７、１７'及び第２絶縁層１５は、例えば、アルカリ性の薬液によって剥離除去することができる。   Next, as shown in FIG. 1 (h), the films 17, 17 ′ and the second insulating layer 15 are removed. The films 17, 17 ′ and the second insulating layer 15 can be peeled and removed with an alkaline chemical solution, for example.

最後に、図１（ｉ）に示すように、第１絶縁層１２上に残存する導電性薄膜層１４が除去され、第１導体配線１６及び第２導体配線１８を有する両面配線基板１０が完成する。なお、導電性薄膜層１４は、例えば、酸性の薬液によって剥離除去することができる。   Finally, as shown in FIG. 1I, the conductive thin film layer 14 remaining on the first insulating layer 12 is removed, and the double-sided wiring board 10 having the first conductor wiring 16 and the second conductor wiring 18 is completed. To do. In addition, the electroconductive thin film layer 14 can be peeled and removed by an acidic chemical solution, for example.

なお、本参考形態に係る両面配線基板１０の所定部位１９には、電解めっきによる第１導体配線１６及び第２導体配線１８が形成されず、第１絶縁層１２のみによって構成されるため、第１絶縁層１２を例えば可撓性を有するフィルム状の材料から形成することにより、当該部位１９において、十分な屈曲特性を得ることが可能である。   In addition, since the first conductor wiring 16 and the second conductor wiring 18 by electrolytic plating are not formed in the predetermined portion 19 of the double-sided wiring board 10 according to the present embodiment, and only the first insulating layer 12 is formed. By forming the insulating layer 12 from, for example, a flexible film-like material, it is possible to obtain sufficient bending characteristics at the portion 19.

（第１の実施形態）
図２は、本発明の第１の実施形態に係る両面配線基板の製造方法を示す説明図である。図２（ａ）に示すように、本実施形態に係る両面配線基板の製造方法でも、参考形態と同様に、第１導体層２１の一方の面に第１絶縁層２２が形成された基板材料２が用いられる。第１導体層２１及び第１絶縁層２２を形成する好ましい材料や厚みについては、参考形態と同様である。 (First embodiment)
FIG. 2 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the first embodiment of the present invention. As shown in FIG. 2A, in the method for manufacturing a double-sided wiring board according to the present embodiment, the substrate material in which the first insulating layer 22 is formed on one surface of the first conductor layer 21 as in the reference embodiment. 2 is used. A preferable material and thickness for forming the first conductor layer 21 and the first insulating layer 22 are the same as those in the reference embodiment.

次に、図２（ｂ）に示すように、基板材料２に対して、第１絶縁層２２の所定部位から、第１絶縁層２２及び第１導体層２１の両方を貫通する導通孔２３が形成される。なお、導通孔１３の好ましい形成方法や孔径については、参考形態と同様である。   Next, as shown in FIG. 2B, a conductive hole 23 penetrating both the first insulating layer 22 and the first conductor layer 21 from a predetermined portion of the first insulating layer 22 with respect to the substrate material 2 is formed. It is formed. In addition, about the preferable formation method and hole diameter of the conduction | electrical_connection hole 13, it is the same as that of a reference form.

次に、図２（ｃ）に示すように、第１絶縁層２２の表面及び導通孔２３の壁面に導電性薄膜層２４が形成される。なお、導電性薄膜層２４の好ましい材料や厚みについては、参考形態と同様である。   Next, as shown in FIG. 2C, the conductive thin film layer 24 is formed on the surface of the first insulating layer 22 and the wall surface of the conduction hole 23. In addition, about the preferable material and thickness of the electroconductive thin film layer 24, it is the same as that of a reference form.

次に、図２（ｄ）に示すように、導電性薄膜層２４上の所定部位に第２絶縁層２５が形成される。なお、本実施形態では、第１導体層２１の他方の面上の所定部位にも絶縁層２５'が形成される。なお、第２絶縁層２５及び絶縁層２５'の好ましい材料や厚みについては、参考形態における第２絶縁層１５と同様である。   Next, as shown in FIG. 2D, a second insulating layer 25 is formed at a predetermined position on the conductive thin film layer 24. In the present embodiment, the insulating layer 25 ′ is also formed at a predetermined portion on the other surface of the first conductor layer 21. In addition, about the preferable material and thickness of 2nd insulating layer 25 and insulating layer 25 ', it is the same as that of the 2nd insulating layer 15 in a reference form.

次に、図２（ｅ）に示すように、導電性薄膜層２４上の第２絶縁層２５が形成されていない部位に、電解めっきによって第１導体配線２６が形成される。ここで、本実施形態においては、導電性薄膜層２４が形成されていない第１導体層２１の他方の面上であって、絶縁層２５'が形成されていない部位にも、前記電解めっきによって導体層２６'が形成されることになる。なお、前記電解めっきは、参考形態と同様に、例えば、電解硫酸銅めっき液中に基板材料２を浸漬し、印加することにより実施される。   Next, as shown in FIG. 2 (e), the first conductor wiring 26 is formed by electrolytic plating at a portion on the conductive thin film layer 24 where the second insulating layer 25 is not formed. Here, in the present embodiment, a portion on the other surface of the first conductor layer 21 where the conductive thin film layer 24 is not formed and where the insulating layer 25 ′ is not formed is also formed by the electrolytic plating. A conductor layer 26 'is formed. In addition, the said electrolytic plating is implemented by immersing and applying the board | substrate material 2 in an electrolytic copper sulfate plating solution similarly to the reference form, for example.

次に、図２（ｆ）に示すように、第１導体配線２６が、例えば、塩化第二鉄や塩化第二銅の酸に対する耐薬液性を有する皮膜２７で被覆される。なお、本実施形態においても、参考形態と同様に、導体層２６'上にも同様の皮膜２７'が形成される。皮膜２７、２７'の好ましい材料や厚みについては、それぞれ参考形態における皮膜１７、１７'と同様である。   Next, as shown in FIG.2 (f), the 1st conductor wiring 26 is coat | covered with the membrane | film | coat 27 which has chemical resistance with respect to the acid of ferric chloride or a cupric chloride, for example. In the present embodiment, similar to the reference embodiment, a similar film 27 ′ is also formed on the conductor layer 26 ′. The preferable materials and thicknesses of the films 27 and 27 ′ are the same as those of the films 17 and 17 ′ in the reference form, respectively.

次に、図２（ｇ）に示すように、第１導体層２１の他方の面の所定部位（本実施形態では皮膜２７'及び導体層２６'の所定部位も含む）を薬液によって化学的に溶解させ、第２導体配線２８が形成される。なお、溶解方法は、参考形態と同様である。   Next, as shown in FIG. 2 (g), a predetermined portion of the other surface of the first conductor layer 21 (including the predetermined portion of the film 27 'and the conductor layer 26' in this embodiment) is chemically treated with a chemical solution. The second conductor wiring 28 is formed by melting. The dissolution method is the same as in the reference form.

次に、図２（ｈ）に示すように、皮膜２７、２７'、第２絶縁層２５及び絶縁層２５'が除去される。なお、これらの除去方法は、参考形態と同様である。   Next, as shown in FIG. 2 (h), the films 27 and 27 ′, the second insulating layer 25, and the insulating layer 25 ′ are removed. These removal methods are the same as in the reference embodiment.

最後に、図２（ｉ）に示すように、第１絶縁層２２上に残存する導電性薄膜層２４が除去され、第１導体配線２６及び第２導体配線２８を有する両面配線基板２０が完成する。なお、導電性薄膜層２４の除去方法は、参考形態と同様である。   Finally, as shown in FIG. 2I, the conductive thin film layer 24 remaining on the first insulating layer 22 is removed, and the double-sided wiring board 20 having the first conductor wiring 26 and the second conductor wiring 28 is completed. To do. The method for removing the conductive thin film layer 24 is the same as in the reference embodiment.

なお、本実施形態に係る両面配線基板２０の所定部位２９には、電解めっきによる第１導体配線２６が形成されず、第１絶縁層２２と第１導体層２１のみによって構成されるため、第１絶縁層１２を例えば可撓性を有するフィルム状の材料から形成し、第１導体層２１を圧延銅箔等から形成することにより、当該部位２９において、十分な屈曲特性を得ることが可能である。 In addition, since the first conductor wiring 26 by electrolytic plating is not formed in the predetermined portion 29 of the double-sided wiring board 20 according to the present embodiment, and is configured only by the first insulating layer 22 and the first conductor layer 21, By forming the insulating layer 12 from, for example, a flexible film-like material and forming the first conductor layer 21 from rolled copper foil or the like, sufficient bending characteristics can be obtained at the portion 29. Oh Ru.

（第２の実施形態）
図３は、本発明の第２の実施形態に係る両面配線基板の製造方法を示す説明図である。図３（ａ）に示すように、本実施形態に係る両面配線基板の製造方法でも、参考形態と同様に、第１導体層３１の一方の面に第１絶縁層３２が形成された基板材料３が用いられる。第１導体層３１及び第１絶縁層３２を形成する好ましい材料や厚みについては、参考形態と同様である。 (Second Embodiment)
FIG. 3 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the second embodiment of the present invention. As shown in FIG. 3A, in the method for manufacturing a double-sided wiring board according to this embodiment, as in the reference embodiment, the substrate material in which the first insulating layer 32 is formed on one surface of the first conductor layer 31. 3 is used. A preferable material and thickness for forming the first conductor layer 31 and the first insulating layer 32 are the same as those in the reference embodiment.

次に、図３（ｂ）に示すように、基板材料３に対して、第１絶縁層３２の所定部位から、第１絶縁層３２及び第１導体層３１の両方を貫通する導通孔３３が形成される。なお、導通孔３３の好ましい形成方法や孔径については、参考形態と同様である。   Next, as shown in FIG. 3B, a conductive hole 33 penetrating both the first insulating layer 32 and the first conductor layer 31 from a predetermined portion of the first insulating layer 32 with respect to the substrate material 3 is formed. It is formed. In addition, about the preferable formation method and hole diameter of the conduction | electrical_connection hole 33, it is the same as that of a reference form.

次に、図３（ｃ）に示すように、第１絶縁層３２の表面及び導通孔３３の壁面に導電性薄膜層３４が形成される。なお、導電性薄膜層３４の好ましい材料や厚みについては、参考形態と同様である。   Next, as shown in FIG. 3C, the conductive thin film layer 34 is formed on the surface of the first insulating layer 32 and the wall surface of the conduction hole 33. In addition, about the preferable material and thickness of the electroconductive thin film layer 34, it is the same as that of a reference form.

次に、図３（ｄ）に示すように、導電性薄膜層３４上の所定部位に第２絶縁層３５が形成される。なお、本実施形態では、第１導体層３１の他方の面の全面にも絶縁層３５'が形成される。なお、第２絶縁層３５及び絶縁層３５'の好ましい材料や厚みについては、参考形態における第２絶縁層１５と同様である。   Next, as shown in FIG. 3D, a second insulating layer 35 is formed at a predetermined position on the conductive thin film layer 34. In the present embodiment, the insulating layer 35 ′ is also formed on the entire other surface of the first conductor layer 31. In addition, about the preferable material and thickness of 2nd insulating layer 35 and insulating layer 35 ', it is the same as that of the 2nd insulating layer 15 in a reference form.

次に、図３（ｅ）に示すように、導電性薄膜層３４上の第２絶縁層３５が形成されていない部位に、電解めっきによって第１導体配線３６が形成される。ここで、本実施形態においては、第１導体層３１の他方の面の全面に絶縁層３５'が形成されているため、第１導体層３１の他方の面には、前記電解めっきによる導体層は形成されない。なお、前記電解めっきは、参考形態と同様に、例えば、電解硫酸銅めっき液中に基板材料３を浸漬することにより実施される。   Next, as shown in FIG. 3E, a first conductor wiring 36 is formed by electrolytic plating at a portion on the conductive thin film layer 34 where the second insulating layer 35 is not formed. Here, in this embodiment, since the insulating layer 35 ′ is formed on the entire other surface of the first conductor layer 31, the conductor layer formed by the electrolytic plating is formed on the other surface of the first conductor layer 31. Is not formed. In addition, the said electrolytic plating is implemented by immersing the board | substrate material 3 in an electrolytic copper sulfate plating solution similarly to the reference form, for example.

次に、図３（ｆ）に示すように、第１導体配線３６が、例えば、塩化第二鉄や塩化第二銅の酸に対する耐薬液性を有する皮膜３７で被覆される。なお、本実施形態においても、参考形態と同様に、絶縁層３５'上にも同様の皮膜３７'が形成される。皮膜３７、３７'の好ましい材料や厚みについては、それぞれ参考形態における皮膜１７、１７'と同様である。   Next, as shown in FIG.3 (f), the 1st conductor wiring 36 is coat | covered with the membrane | film | coat 37 which has the chemical solution resistance with respect to the acid of a ferric chloride or a cupric chloride, for example. In the present embodiment, the same film 37 ′ is formed on the insulating layer 35 ′ as in the reference embodiment. The preferable materials and thicknesses of the films 37 and 37 ′ are the same as those of the films 17 and 17 ′ in the reference form, respectively.

次に、図３（ｇ）に示すように、第１導体層３１の他方の面の所定部位（本実施形態では皮膜３７'及び絶縁層３５'の所定部位も含む）を薬液によって化学的に溶解させ、第２導体配線３８が形成される。なお、溶解方法は、参考形態と同様である。   Next, as shown in FIG. 3G, a predetermined portion of the other surface of the first conductor layer 31 (including a predetermined portion of the film 37 ′ and the insulating layer 35 ′ in this embodiment) is chemically treated with a chemical solution. The second conductor wiring 38 is formed by melting. The dissolution method is the same as in the reference form.

次に、図３（ｈ）に示すように、皮膜３７、３７'、第２絶縁層３５及び絶縁層３５'が除去される。なお、これらの除去方法は、参考形態と同様である。   Next, as shown in FIG. 3H, the coatings 37 and 37 ′, the second insulating layer 35, and the insulating layer 35 ′ are removed. These removal methods are the same as in the reference embodiment.

最後に、図３（ｉ）に示すように、第１絶縁層３２上に残存する導電性薄膜層３４が除去され、第１導体配線３６及び第２導体配線３８を有する両面配線基板３０が完成する。なお、導電性薄膜層３４の除去方法は、参考形態と同様である。   Finally, as shown in FIG. 3I, the conductive thin film layer 34 remaining on the first insulating layer 32 is removed, and the double-sided wiring board 30 having the first conductor wiring 36 and the second conductor wiring 38 is completed. To do. The method for removing the conductive thin film layer 34 is the same as in the reference embodiment.

（第３の実施形態）
図４は、本発明の第３の実施形態に係る両面配線基板の製造方法を示す説明図である。図４（ａ）に示すように、本実施形態に係る両面配線基板の製造方法でも、参考形態と同様に、第１導体層４１の一方の面に第１絶縁層４２が形成された基板材料４が用いられる。第１導体層４１及び第１絶縁層４２を形成する好ましい材料や厚みについては、参考形態と同様である。 (Third embodiment)
FIG. 4 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the third embodiment of the present invention. As shown in FIG. 4A, the substrate material in which the first insulating layer 42 is formed on one surface of the first conductor layer 41 also in the method for manufacturing the double-sided wiring board according to the present embodiment, as in the reference embodiment. 4 is used. A preferable material and thickness for forming the first conductor layer 41 and the first insulating layer 42 are the same as those in the reference embodiment.

次に、図４（ｂ）に示すように、基板材料４に対して、第１絶縁層４２の所定部位から、第１絶縁層４２のみを貫通する導通孔４３が形成される。なお、導通孔４３の好ましい形成方法や孔径については、参考形態と同様である。   Next, as shown in FIG. 4B, a conduction hole 43 that penetrates only the first insulating layer 42 from a predetermined portion of the first insulating layer 42 is formed in the substrate material 4. In addition, about the preferable formation method and hole diameter of the conduction | electrical_connection hole 43, it is the same as that of a reference form.

次に、図４（ｃ）に示すように、第１絶縁層４２の表面及び導通孔４３の壁面に、さらに本実施形態では、これらに加え、導通孔４３の底面、つまり第１導体層４１の露呈した面に導電性薄膜層４４が形成される。なお、導電性薄膜層４４の好ましい材料や厚みについては、参考形態と同様である。   Next, as shown in FIG. 4C, on the surface of the first insulating layer 42 and the wall surface of the conduction hole 43, in this embodiment, in addition to these, the bottom surface of the conduction hole 43, that is, the first conductor layer 41. A conductive thin film layer 44 is formed on the exposed surface. In addition, about the preferable material and thickness of the electroconductive thin film layer 44, it is the same as that of a reference form.

次に、図４（ｄ）に示すように、導電性薄膜層４４上の所定部位に第２絶縁層４５が形成される。なお、本実施形態では、第１導体層４１の他方の面の全面にも絶縁層４５'が形成される。なお、第２絶縁層４５及び絶縁層４５'の好ましい材料や厚みについては、参考形態における第２絶縁層１５と同様である。   Next, as shown in FIG. 4D, a second insulating layer 45 is formed at a predetermined position on the conductive thin film layer 44. In the present embodiment, the insulating layer 45 ′ is also formed on the entire other surface of the first conductor layer 41. In addition, about the preferable material and thickness of 2nd insulating layer 45 and insulating layer 45 ', it is the same as that of the 2nd insulating layer 15 in a reference form.

次に、図４（ｅ）に示すように、導電性薄膜層４４上の第２絶縁層４５が形成されていない部位に、電解めっきによって第１導体配線４６が形成される。ここで、本実施形態においては、第１導体層４１の他方の面の全面に絶縁層４５'が形成されているため、第１導体層４１の他方の面には、前記電解めっきによる導体層は形成されない。なお、前記電解めっきは、参考形態と同様に、例えば、電解硫酸銅めっき液中に基板材料４を浸漬することにより実施される。   Next, as shown in FIG. 4E, a first conductor wiring 46 is formed by electrolytic plating at a site on the conductive thin film layer 44 where the second insulating layer 45 is not formed. Here, in this embodiment, since the insulating layer 45 ′ is formed on the entire other surface of the first conductor layer 41, the conductor layer formed by the electrolytic plating is formed on the other surface of the first conductor layer 41. Is not formed. In addition, the said electrolytic plating is implemented by immersing the board | substrate material 4 in an electrolytic copper sulfate plating solution similarly to the reference form, for example.

次に、図４（ｆ）に示すように、第１導体配線４６が、例えば、塩化第二鉄や塩化第二銅の酸に対する耐薬液性を有する皮膜４７で被覆される。なお、本実施形態においても、参考形態と同様に、絶縁層４５'上にも同様の皮膜４７'が形成される。皮膜４７、４７'の好ましい材料や厚みについては、それぞれ参考形態における皮膜１７、１７'と同様である。   Next, as shown in FIG.4 (f), the 1st conductor wiring 46 is coat | covered with the membrane | film | coat 47 which has the chemical solution resistance with respect to the acid of a ferric chloride or a cupric chloride, for example. In the present embodiment, the same film 47 ′ is formed on the insulating layer 45 ′ as in the reference embodiment. The preferable materials and thicknesses of the films 47 and 47 ′ are the same as those of the films 17 and 17 ′ in the reference form, respectively.

次に、図４（ｇ）に示すように、第１導体層４１の他方の面の所定部位（本実施形態では皮膜４７'及び絶縁層４５'の所定部位も含む）を薬液によって化学的に溶解させ、第２導体配線４８が形成される。なお、溶解方法は、参考形態と同様である。   Next, as shown in FIG. 4G, the predetermined portion (including the predetermined portion of the film 47 ′ and the insulating layer 45 ′ in this embodiment) on the other surface of the first conductor layer 41 is chemically treated with a chemical solution. The second conductor wiring 48 is formed by melting. The dissolution method is the same as in the reference form.

次に、図４（ｈ）に示すように、皮膜４７、４７'、第２絶縁層４５及び絶縁層４５'が除去される。なお、これらの除去方法は、参考形態と同様である。   Next, as shown in FIG. 4H, the films 47 and 47 ′, the second insulating layer 45, and the insulating layer 45 ′ are removed. These removal methods are the same as in the reference embodiment.

最後に、図４（ｉ）に示すように、第１絶縁層４２上に残存する導電性薄膜層４４が除去され、第１導体配線４６及び第２導体配線４８を有する両面配線基板４０が完成する。なお、導電性薄膜層４４の除去方法は、参考形態と同様である。   Finally, as shown in FIG. 4I, the conductive thin film layer 44 remaining on the first insulating layer 42 is removed, and the double-sided wiring board 40 having the first conductor wiring 46 and the second conductor wiring 48 is completed. To do. The method for removing the conductive thin film layer 44 is the same as in the reference embodiment.

（第４の実施形態）
図５は、本発明の第４の実施形態に係る両面配線基板の製造方法を示す説明図である。図５（ａ）に示すように、本実施形態に係る両面配線基板の製造方法でも、参考形態と同様に、第１導体層５１の一方の面に第１絶縁層５２が形成された基板材料５が用いられる。第１導体層５１及び第１絶縁層５２を形成する好ましい材料や厚みについては、参考形態と同様である。 (Fourth embodiment)
FIG. 5 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the fourth embodiment of the present invention. As shown in FIG. 5A, in the method for manufacturing a double-sided wiring board according to the present embodiment, the substrate material in which the first insulating layer 52 is formed on one surface of the first conductor layer 51 as in the reference embodiment. 5 is used. A preferable material and thickness for forming the first conductor layer 51 and the first insulating layer 52 are the same as those in the reference embodiment.

次に、図５（ｂ）に示すように、基板材料５に対して、第１絶縁層５２の所定部位から、第１絶縁層５２のみを貫通する導通孔５３が形成される。なお、導通孔５３の好ましい形成方法や孔径については、参考形態と同様である。   Next, as shown in FIG. 5B, a conduction hole 53 that penetrates only the first insulating layer 52 from a predetermined portion of the first insulating layer 52 is formed in the substrate material 5. In addition, about the preferable formation method and hole diameter of the conduction | electrical_connection hole 53, it is the same as that of a reference form.

次に、図５（ｃ）に示すように、第１絶縁層５２の表面、導通孔５３の壁面、導通孔５３の底面に導電性薄膜層５４が形成される。なお、導電性薄膜層５４の好ましい材料や厚みについては、参考形態と同様である。   Next, as shown in FIG. 5C, the conductive thin film layer 54 is formed on the surface of the first insulating layer 52, the wall surface of the conduction hole 53, and the bottom surface of the conduction hole 53. In addition, about the preferable material and thickness of the electroconductive thin film layer 54, it is the same as that of a reference form.

次に、図５（ｄ）に示すように、導電性薄膜層５４上の所定部位に第２絶縁層５５が形成される。なお、本実施形態では、第１導体層５１の他方の面の全面にも絶縁層５５'が形成される。なお、第２絶縁層５５及び絶縁層５５'の好ましい材料や厚みについては、参考形態における第２絶縁層１５と同様である。   Next, as shown in FIG. 5D, a second insulating layer 55 is formed at a predetermined position on the conductive thin film layer 54. In the present embodiment, the insulating layer 55 ′ is also formed on the entire other surface of the first conductor layer 51. In addition, about the preferable material and thickness of 2nd insulating layer 55 and insulating layer 55 ', it is the same as that of the 2nd insulating layer 15 in a reference form.

次に、図５（ｅ）に示すように、導電性薄膜層５４上の第２絶縁層５５が形成されていない部位に、電解めっきによって第１導体配線５６が形成される。ここで、本実施形態においては、第１導体層５１の他方の面の全面に絶縁層５５'が形成されているため、第１導体層５１の他方の面には、前記電解めっきによる導体層は形成されない。なお、前記電解めっきは、参考形態と同様に、例えば、電解硫酸銅めっき液中に基板材料５を浸漬し、印加することにより実施される。   Next, as shown in FIG. 5E, a first conductor wiring 56 is formed by electrolytic plating in a portion where the second insulating layer 55 on the conductive thin film layer 54 is not formed. Here, in this embodiment, since the insulating layer 55 ′ is formed on the entire other surface of the first conductor layer 51, the conductor layer formed by the electrolytic plating is formed on the other surface of the first conductor layer 51. Is not formed. In addition, the said electrolytic plating is implemented by immersing and applying the board | substrate material 5 in an electrolytic copper sulfate plating solution similarly to the reference form, for example.

次に、図５（ｆ）に示すように、第１導体配線５６が、例えば、塩化第二鉄や塩化第二銅の酸に対する耐薬液性を有する皮膜５７で被覆される。なお、本実施形態においても、参考形態と同様に、絶縁層５５'上にも同様の皮膜５７'が形成される。皮膜５７、５７'の好ましい材料や厚みについては、それぞれ参考形態における皮膜１７、１７'と同様である。   Next, as shown in FIG.5 (f), the 1st conductor wiring 56 is coat | covered with the membrane | film | coat 57 which has chemical resistance with respect to the acid of a ferric chloride or a cupric chloride, for example. In the present embodiment, similar to the reference embodiment, a similar film 57 ′ is formed on the insulating layer 55 ′. The preferable materials and thicknesses of the films 57 and 57 ′ are the same as those of the films 17 and 17 ′ in the reference form, respectively.

次に、図５（ｇ）に示すように、第１導体層５１の他方の面の所定部位（本実施形態では皮膜５７'及び絶縁層５５'の所定部位も含む）を薬液によって化学的に溶解させ、第２導体配線５８が形成される。なお、溶解方法は、参考形態と同様である。   Next, as shown in FIG. 5G, a predetermined portion of the other surface of the first conductor layer 51 (including a predetermined portion of the film 57 ′ and the insulating layer 55 ′ in this embodiment) is chemically treated with a chemical solution. The second conductor wiring 58 is formed by melting. The dissolution method is the same as in the reference form.

次に、図５（ｈ）に示すように、皮膜５７、５７'、第２絶縁層５５及び絶縁層５５'が除去される。なお、これらの除去方法は、参考形態と同様である。   Next, as shown in FIG. 5H, the films 57 and 57 ′, the second insulating layer 55, and the insulating layer 55 ′ are removed. These removal methods are the same as in the reference embodiment.

最後に、図５（ｉ）に示すように、第１絶縁層５２上に残存する導電性薄膜層５４が除去され、第１導体配線５６及び第２導体配線５８を有する両面配線基板５０が完成する。なお、導電性薄膜層５４の除去方法は、参考形態と同様である。   Finally, as shown in FIG. 5I, the conductive thin film layer 54 remaining on the first insulating layer 52 is removed, and the double-sided wiring board 50 having the first conductor wiring 56 and the second conductor wiring 58 is completed. To do. The method for removing the conductive thin film layer 54 is the same as in the reference embodiment.

なお、以上に説明した参考形態及び第１〜第４の実施形態に係る両面配線基板は、必要に応じて、第１導体配線及び第２導体配線上に絶縁層（カバーレイ）が形成され、さらに、必要に応じて、当該絶縁層上に金めっき等の表面処理が施される場合がある。   In the double-sided wiring board according to the reference embodiment and the first to fourth embodiments described above, an insulating layer (cover lay) is formed on the first conductor wiring and the second conductor wiring, if necessary. Furthermore, surface treatment such as gold plating may be performed on the insulating layer as necessary.

以下に実施例を示し、本発明の特徴をより一層明らかにする。   The following examples illustrate the features of the present invention more clearly.

（参考例）
本参考例では、図１に示す参考形態に係る両面配線基板の製造方法に従って、両面配線基板を製造した。まず、基板材料１として、厚み１２μｍの銅箔からなる第１導体層１１上に、第１絶縁層１２としての厚み２５μｍのポリイミド樹脂が直接形成された銅張積層板（例えば、新日鐵化学製エスパネックス、三井化学製ネオフレックス等）を用いた。次に、ＹＡＧレーザによって、孔径７５μｍの導通孔１３を形成した。次に、スパッタにより、厚み５００ÅのＮｉ／Ｃｒ合金からなる導電性薄膜層１４を形成した。次に、第２絶縁層１５として、厚み１５μｍの感光性の絶縁フィルム（例えば旭化成製ＳＰＧ１５２）をラミネートにより積層し、所定位置を遮光することのできるガラスマスクを介して、第２絶縁層１５に紫外線を照射した後、アルカリ溶液中で解像を行った。次に、基板材料１を電解硫酸銅めっき液中に浸漬し、２．５Ａ／ｄｍ２で約１８分間めっきすることにより、厚み８μｍの銅めっき配線からなる第１導体配線１６を形成した。また、第１導体層１１の他方の面の全面にも厚み８μｍの銅めっきからなる導体層１６'を形成し、第１導体層１１と合わせて合計の厚みが２０μｍである銅層を形成した。次に、皮膜１７、１７'として、厚み１０μｍの感光性の絶縁フィルム（例えば旭化成製ＳＦＧ１０２）をラミネートにより積層し、皮膜１７'を所望する配線パターンに応じて露光・解像した後、塩化第二鉄を用いて前記２０μｍ厚の銅層を溶解し、第２導体配線１８を形成した。さらに、皮膜１７、１７'、第２絶縁層１５及び導電性薄膜層１４を除去し、両面配線基板１０を得た。本参考例に係る両面配線基板１０は、第１導体配線１６が均一に形成され、表層の配線幅と底面の配線幅の差異が極めて小さくなることが確認された。また、寸法安定性を具備し、カールが生じ難いと共に、十分な屈曲特性を得ることができた。 (Reference example)
In this reference example, a double-sided wiring board was manufactured according to the double-sided wiring board manufacturing method according to the reference embodiment shown in FIG. First, a copper-clad laminate (for example, Nippon Steel Chemical Co., Ltd.) in which a polyimide resin having a thickness of 25 μm as the first insulating layer 12 is directly formed on the first conductor layer 11 made of a copper foil having a thickness of 12 μm as the substrate material 1. Espanex made by Mitsui Chemicals, etc.). Next, a conduction hole 13 having a hole diameter of 75 μm was formed by a YAG laser. Next, the conductive thin film layer 14 made of a Ni / Cr alloy having a thickness of 500 mm was formed by sputtering. Next, as the second insulating layer 15, a photosensitive insulating film having a thickness of 15 μm (for example, SPG152 manufactured by Asahi Kasei) is laminated and laminated on the second insulating layer 15 through a glass mask that can shield light at a predetermined position. After irradiation with ultraviolet rays, resolution was performed in an alkaline solution. Next, the substrate material 1 was immersed in an electrolytic copper sulfate plating solution and plated at 2.5 A / dm 2 for about 18 minutes to form a first conductor wiring 16 made of a copper-plated wiring having a thickness of 8 μm. Also, a conductor layer 16 ′ made of copper plating having a thickness of 8 μm was formed on the entire other surface of the first conductor layer 11, and a copper layer having a total thickness of 20 μm was formed together with the first conductor layer 11. . Next, as the films 17 and 17 ′, a 10 μm-thick photosensitive insulating film (for example, SFG102 manufactured by Asahi Kasei) is laminated, and the film 17 ′ is exposed and resolved in accordance with a desired wiring pattern. The 20 μm thick copper layer was dissolved using ferrous iron to form the second conductor wiring 18. Further, the films 17 and 17 ′, the second insulating layer 15 and the conductive thin film layer 14 were removed to obtain the double-sided wiring board 10. In the double-sided wiring board 10 according to this reference example, it was confirmed that the first conductor wiring 16 was uniformly formed, and the difference between the wiring width of the surface layer and the wiring width of the bottom surface was extremely small. In addition, it has dimensional stability, hardly curls, and has sufficient bending characteristics.

（実施例１）
本実施例では、図２に示す第１の実施形態に係る両面配線基板の製造方法に従って、両面配線基板を製造した。まず、基板材料２として、厚み１２μｍの銅箔からなる第１導体層２１上に、第１絶縁層２２としての厚み１２μｍのポリイミド樹脂が直接形成された銅張積層板（例えば、新日鐵化学製エスパネックス、三井化学製ネオフレックス等）を用いた。次に、ＹＡＧレーザによって、孔径１００μｍの導通孔２３を形成した。次に、スパッタにより、厚み３００ÅのＮｉ／Ｃｕ合金からなる導電性薄膜層２４を形成した。次に、第２絶縁層２５及び絶縁層２５'として、厚み１５μｍの感光性の絶縁フィルム（例えば旭化成製ＳＰＧ１５２）をラミネートにより積層し、所定位置を遮光することのできるガラスマスクを介して、第２絶縁層２５及び絶縁層２５'に紫外線を照射した後、アルカリ溶液中で解像を行った。次に、基板材料２を電解硫酸銅めっき液中に浸漬し、２．５Ａ／ｄｍ２で約２０分間めっきすることにより、厚み１０μｍの銅めっき配線からなる第１導体配線２６を形成した。また、第１導体層２１の他方の面上であって、絶縁層２５'が形成されていない部位にも厚み１０μｍの銅めっきからなる導体層２６'を形成し、第１導体層２１と合わせて合計の厚みが２２μｍである銅層を形成した。次に、皮膜２７、２７'として、厚み６μｍの感光性の絶縁フィルム（日立化成製ＲＹ３２０６）をラミネートにより積層し、皮膜２７'を所望する配線パターンに応じて露光・解像した後、塩化第二鉄を用いて前記２２μｍ厚の銅層を溶解し、第２導体配線２８を形成した。さらに、皮膜２７、２７'、第２絶縁層２５、絶縁層２５'及び導電性薄膜層２４を除去し、両面配線基板２０を得た。本実施例に係る両面配線基板２０は、第１導体配線２６が均一に形成され、表層の配線幅と底面の配線幅の差異が極めて小さくなることが確認された。また、寸法安定性を具備し、カールが生じ難いと共に、十分な屈曲特性を得ることができた。 (Example 1)
In this example, a double-sided wiring board was manufactured according to the double-sided wiring board manufacturing method according to the first embodiment shown in FIG. First, a copper-clad laminate (for example, Nippon Steel Chemical Co., Ltd.) in which a polyimide resin having a thickness of 12 μm as a first insulating layer 22 is directly formed on a first conductor layer 21 made of a copper foil having a thickness of 12 μm as the substrate material 2. Espanex made by Mitsui Chemicals, etc.). Next, a conduction hole 23 having a hole diameter of 100 μm was formed by a YAG laser. Next, a conductive thin film layer 24 made of a Ni / Cu alloy having a thickness of 300 mm was formed by sputtering. Next, as the second insulating layer 25 and the insulating layer 25 ′, a photosensitive insulating film having a thickness of 15 μm (for example, SPG152 manufactured by Asahi Kasei Co., Ltd.) is laminated and laminated through a glass mask capable of shielding light at a predetermined position. 2 After irradiating the insulating layer 25 and the insulating layer 25 ′ with ultraviolet rays, resolution was performed in an alkaline solution. Next, the substrate material 2 was immersed in an electrolytic copper sulfate plating solution and plated at 2.5 A / dm 2 for about 20 minutes to form a first conductor wiring 26 made of a copper-plated wiring having a thickness of 10 μm. Further, a conductor layer 26 ′ made of copper plating having a thickness of 10 μm is formed on the other surface of the first conductor layer 21 where the insulating layer 25 ′ is not formed, and is combined with the first conductor layer 21. A copper layer having a total thickness of 22 μm was formed. Next, as the coatings 27 and 27 ′, a 6 μm-thick photosensitive insulating film (RY3206 manufactured by Hitachi Chemical Co., Ltd.) is laminated, and the coating 27 ′ is exposed and resolved in accordance with a desired wiring pattern. The 22 μm-thick copper layer was dissolved using ferrous iron to form the second conductor wiring 28. Further, the coatings 27 and 27 ′, the second insulating layer 25, the insulating layer 25 ′, and the conductive thin film layer 24 were removed to obtain the double-sided wiring board 20. In the double-sided wiring board 20 according to the present example, it was confirmed that the first conductor wiring 26 was uniformly formed, and the difference between the wiring width of the surface layer and the wiring width of the bottom surface was extremely small. In addition, it has dimensional stability, hardly curls, and has sufficient bending characteristics.

（実施例２）
本実施例では、図３に示す第２の実施形態に係る両面配線基板の製造方法に従って、両面配線基板を製造した。まず、基板材料３として、厚み１８μｍの銅箔からなる第１導体層３１上に、第１絶縁層３２としての厚み１２μｍのポリイミド樹脂が直接形成された銅張積層板（例えば、新日鐵化学製エスパネックス、三井化学製ネオフレックス等）を用いた。次に、パンチング加工によって、孔径１５０μｍの導通孔３３を形成した。次に、スパッタにより、厚み４００ÅのＣｒからなる導電性薄膜層３４を形成した。次に、第２絶縁層３５及び絶縁層３５'として、厚み２５μｍの感光性の絶縁フィルム（例えば旭化成製ＳＰＧ２５２）をラミネートにより積層し、所定位置を遮光することのできるガラスマスクを介して、第２絶縁層３５及び絶縁層３５'に紫外線を照射した後、アルカリ溶液中で解像を行った。次に、基板材料３を電解硫酸銅めっき液中に浸漬し、２．５Ａ／ｄｍ２で約３６分間めっきすることにより、厚み１８μｍの銅めっき配線からなる第１導体配線３６を形成した。次に、皮膜３７、３７'として、厚み６μｍの感光性の絶縁フィルム（日立化成製ＲＹ３２０６）をラミネートにより積層し、皮膜３７'を所望する配線パターンに応じて露光・解像した後、塩化第二鉄を用いて前記１８μｍ厚の第１導体層３１を溶解し、第２導体配線３８を形成した。さらに、皮膜３７、３７'、第２絶縁層３５、絶縁層３５'及び導電性薄膜層３４を除去し、両面配線基板３０を得た。本実施例に係る両面配線基板３０は、第１導体配線３６が均一に形成され、表層の配線幅と底面の配線幅の差異が極めて小さくなることが確認された。また、寸法安定性を具備し、カールが生じ難いと共に、十分な屈曲特性を得ることができた。 (Example 2)
In this example, a double-sided wiring board was manufactured according to the double-sided wiring board manufacturing method according to the second embodiment shown in FIG. First, a copper-clad laminate (for example, Nippon Steel Chemical Co., Ltd.) in which a polyimide resin with a thickness of 12 μm as a first insulating layer 32 is directly formed on a first conductor layer 31 made of a copper foil with a thickness of 18 μm as the substrate material 3. Espanex made by Mitsui Chemicals, etc.). Next, a conduction hole 33 having a hole diameter of 150 μm was formed by punching. Next, a conductive thin film layer 34 made of Cr having a thickness of 400 mm was formed by sputtering. Next, as the second insulating layer 35 and the insulating layer 35 ′, a photosensitive insulating film (for example, SPG252 manufactured by Asahi Kasei Co., Ltd.) having a thickness of 25 μm is laminated by lamination, and the first position is passed through a glass mask that can shield light at a predetermined position. 2 After irradiating the insulating layer 35 and the insulating layer 35 ′ with ultraviolet rays, resolution was performed in an alkaline solution. Next, the substrate material 3 was immersed in an electrolytic copper sulfate plating solution and plated at 2.5 A / dm 2 for about 36 minutes to form a first conductor wiring 36 made of a copper-plated wiring having a thickness of 18 μm. Next, as the coatings 37 and 37 ′, a photosensitive insulating film (RY3206 manufactured by Hitachi Chemical Co., Ltd.) having a thickness of 6 μm is laminated by laminating, and the coating 37 ′ is exposed and resolved in accordance with a desired wiring pattern. The first conductor layer 31 having a thickness of 18 μm was dissolved using ferrous iron to form a second conductor wiring 38. Further, the coatings 37 and 37 ′, the second insulating layer 35, the insulating layer 35 ′, and the conductive thin film layer 34 were removed to obtain a double-sided wiring board 30. In the double-sided wiring board 30 according to the present example, it was confirmed that the first conductor wiring 36 was uniformly formed, and the difference between the wiring width of the surface layer and the wiring width of the bottom surface was extremely small. In addition, it has dimensional stability, hardly curls, and has sufficient bending characteristics.

（実施例３）
本実施例では、図４に示す第３の実施形態に係る両面配線基板の製造方法に従って、両面配線基板を製造した。まず、基板材料４として、厚み１８μｍの銅箔からなる第１導体層４１上に、第１絶縁層４２としての厚み１２μｍのポリイミド樹脂が直接形成された銅張積層板（例えば、新日鐵化学製エスパネックス、三井化学製ネオフレックス等）を用いた。次に、薬液によって、孔径８０μｍの導通孔４３を形成した。次に、スパッタにより、厚み４００ÅのＮｉ／Ｃｒ合金からなる導電性薄膜層４４を形成した。さらに、スパッタにより、Ｃｕからなる導電性薄膜層を導電性薄膜層４４の上に形成した。次に、第２絶縁層４５及び絶縁層４５'として、厚み２５μｍの感光性の絶縁フィルム（例えば旭化成製ＳＰＧ２５２）をラミネートにより積層し、所定位置を遮光することのできるガラスマスクを介して、第２絶縁層４５及び絶縁層４５'に紫外線を照射した後、アルカリ溶液中で解像を行った。次に、基板材料４を電解硫酸銅めっき液中に浸漬し、２．５Ａ／ｄｍ２で約１８分間めっきすることにより、厚み８μｍの銅めっき配線からなる第１導体配線４６を形成した。次に、皮膜４７、４７'として、厚み６μｍの感光性の絶縁フィルム（日立化成製ＲＹ３２０６）をラミネートにより積層し、皮膜４７'を所望する配線パターンに応じて露光・解像した後、塩化第二鉄を用いて前記１８μｍ厚の第１導体層４１を溶解し、第２導体配線４８を形成した。さらに、皮膜４７、４７'、第２絶縁層４５、絶縁層４５'及び導電性薄膜層４４を除去し、両面配線基板４０を得た。本実施例に係る両面配線基板４０は、第１導体配線４６が均一に形成され、表層の配線幅と底面の配線幅の差異が極めて小さくなることが確認された。また、寸法安定性を具備し、カールが生じ難いと共に、十分な屈曲特性を得ることができた。 (Example 3)
In this example, a double-sided wiring board was manufactured according to the double-sided wiring board manufacturing method according to the third embodiment shown in FIG. First, a copper-clad laminate (for example, Nippon Steel Chemical Co., Ltd.) in which a polyimide resin with a thickness of 12 μm as a first insulating layer 42 is directly formed on a first conductor layer 41 made of a copper foil with a thickness of 18 μm as the substrate material 4. Espanex made by Mitsui Chemicals, etc.). Next, a conduction hole 43 having a hole diameter of 80 μm was formed with a chemical solution. Next, a conductive thin film layer 44 made of a Ni / Cr alloy having a thickness of 400 mm was formed by sputtering. Further, a conductive thin film layer made of Cu was formed on the conductive thin film layer 44 by sputtering. Next, as the second insulating layer 45 and the insulating layer 45 ′, a photosensitive insulating film (for example, SPG252 manufactured by Asahi Kasei Co., Ltd.) having a thickness of 25 μm is laminated by lamination, and the first position is passed through a glass mask that can shield light at a predetermined position. The two insulating layers 45 and 45 ′ were irradiated with ultraviolet rays, and then resolved in an alkaline solution. Next, the substrate material 4 was immersed in an electrolytic copper sulfate plating solution and plated at 2.5 A / dm 2 for about 18 minutes to form a first conductor wiring 46 made of a copper-plated wiring having a thickness of 8 μm. Next, as the films 47 and 47 ′, a 6 μm thick photosensitive insulating film (RY3206 manufactured by Hitachi Chemical Co., Ltd.) is laminated, and the film 47 ′ is exposed and resolved in accordance with a desired wiring pattern. The first conductor layer 41 having a thickness of 18 μm was dissolved using ferrous iron to form a second conductor wiring 48. Further, the films 47 and 47 ′, the second insulating layer 45, the insulating layer 45 ′, and the conductive thin film layer 44 were removed to obtain a double-sided wiring board 40. In the double-sided wiring board 40 according to this example, it was confirmed that the first conductor wiring 46 was formed uniformly, and the difference between the wiring width of the surface layer and the wiring width of the bottom surface was extremely small. In addition, it has dimensional stability, hardly curls, and has sufficient bending characteristics.

（実施例４）
本実施例では、図５に示す第４の実施形態に係る両面配線基板の製造方法に従って、両面配線基板を製造した。まず、基板材料５として、厚み１８μｍの銅箔からなる第１導体層５１上に、第１絶縁層５２としての厚み１２μｍの感光性ポリイミド樹脂が直接形成された銅張積層板を用いた。次に、薬液によって、孔径８０μｍの導通孔５３を形成した。次に、スパッタにより、厚み４００ÅのＮｉ／Ｃｒ合金からなる導電性薄膜層５４を形成した。次に、第２絶縁層５５及び絶縁層５５'として、厚み２５μｍの感光性の絶縁フィルム（例えば旭化成製ＳＰＧ２５２）をラミネートにより積層し、所定位置を遮光することのできるガラスマスクを介して、第２絶縁層５５及び絶縁層５５'に紫外線を照射した後、アルカリ溶液中で解像を行った。次に、基板材料５を電解硫酸銅めっき液中に浸漬し、２．５Ａ／ｄｍ２で約３６分間めっきすることにより、厚み１８μｍの銅めっき配線からなる第１導体配線５６を形成した。次に、皮膜５７、５７'として、厚み６μｍの感光性の絶縁フィルム（日立化成製ＲＹ３２０６）をラミネートにより積層し、皮膜５７'を所望する配線パターンに応じて露光・解像した後、塩化第二鉄を用いて前記１８μｍ厚の第１導体層５１を溶解し、第２導体配線５８を形成した。さらに、皮膜５７、５７'、第２絶縁層５５、絶縁層５５'及び導電性薄膜層５４を除去し、両面配線基板５０を得た。本実施例に係る両面配線基板５０は、第１導体配線５６が均一に形成され、表層の配線幅と底面の配線幅の差異が極めて小さくなることが確認された。また、寸法安定性を具備し、カールが生じ難いと共に、十分な屈曲特性を得ることができた。 Example 4
In this example, a double-sided wiring board was manufactured according to the double-sided wiring board manufacturing method according to the fourth embodiment shown in FIG. First, as the substrate material 5, a copper-clad laminate in which a photosensitive polyimide resin having a thickness of 12 μm as a first insulating layer 52 was directly formed on a first conductor layer 51 made of a copper foil having a thickness of 18 μm was used. Next, a conduction hole 53 having a hole diameter of 80 μm was formed with a chemical solution. Next, the conductive thin film layer 54 made of a Ni / Cr alloy having a thickness of 400 mm was formed by sputtering. Next, as the second insulating layer 55 and the insulating layer 55 ′, a photosensitive insulating film having a thickness of 25 μm (for example, SPG 252 manufactured by Asahi Kasei) is laminated by lamination, and a glass mask that can shield light at a predetermined position is used. 2 The insulating layer 55 and the insulating layer 55 ′ were irradiated with ultraviolet rays, and then resolved in an alkaline solution. Next, the substrate material 5 was immersed in an electrolytic copper sulfate plating solution and plated at 2.5 A / dm 2 for about 36 minutes to form a first conductor wiring 56 made of a copper-plated wiring having a thickness of 18 μm. Next, as the films 57 and 57 ′, a 6 μm-thick photosensitive insulating film (RY3206 manufactured by Hitachi Chemical Co., Ltd.) is laminated, and the film 57 ′ is exposed and resolved in accordance with a desired wiring pattern. The first conductor layer 51 having a thickness of 18 μm was dissolved using ferrous iron to form the second conductor wiring 58. Further, the films 57 and 57 ′, the second insulating layer 55, the insulating layer 55 ′, and the conductive thin film layer 54 were removed to obtain the double-sided wiring board 50. In the double-sided wiring board 50 according to the present example, it was confirmed that the first conductor wiring 56 was uniformly formed, and the difference between the wiring width of the surface layer and the wiring width of the bottom surface was extremely small. In addition, it has dimensional stability, hardly curls, and has sufficient bending characteristics.

図１は、参考形態に係る両面配線基板の製造方法を示す説明図である。FIG. 1 is an explanatory view showing a method for manufacturing a double-sided wiring board according to a reference embodiment. 図２は、本発明の第１の実施形態に係る両面配線基板の製造方法を示す説明図である。FIG. 2 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the first embodiment of the present invention. 図３は、本発明の第２の実施形態に係る両面配線基板の製造方法を示す説明図である。FIG. 3 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the second embodiment of the present invention. 図４は、本発明の第３の実施形態に係る両面配線基板の製造方法を示す説明図である。FIG. 4 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the third embodiment of the present invention. 図５は、本発明の第４の実施形態に係る両面配線基板の製造方法を示す説明図である。FIG. 5 is an explanatory view showing a method for manufacturing a double-sided wiring board according to the fourth embodiment of the present invention. 図６は、従来の両面配線基板の製造方法を示す説明図である。FIG. 6 is an explanatory view showing a conventional method for manufacturing a double-sided wiring board.

符号の説明Explanation of symbols

１，２，３，４，５…基板材料、１１，２１，３１，４１，５１…第１導体層、１２，２２，３２，４２，５２…第１絶縁層、１３，２３，３３，４３，５３…導通孔、１４，２４，３４，４４，５４…導電性薄膜層、１５，２５，３５，４５，５５…第２絶縁層、１６，２６，３６，４６，５６…第１導体配線、１７，２７，３７，４７，５７…皮膜、１８，２８，３８，４８，５８・・・第２導体配線   1, 2, 3, 4, 5 ... substrate material, 11, 21, 31, 41, 51 ... first conductor layer, 12, 22, 32, 42, 52 ... first insulating layer, 13, 23, 33, 43 , 53 ... conduction hole, 14, 24, 34, 44, 54 ... conductive thin film layer, 15, 25, 35, 45, 55 ... second insulating layer, 16, 26, 36, 46, 56 ... first conductor wiring , 17, 27, 37, 47, 57 ... coating, 18, 28, 38, 48, 58 ... second conductor wiring

Claims (1)

第１導体層の一方の面に第１絶縁層が形成された基板材料に対して、
前記第１絶縁層の所定部位から、前記第１絶縁層のみを貫通する又は前記第１絶縁層及び前記第１導体層の両方を貫通する導通孔を形成する第１ステップと、
前記第１絶縁層の表面及び前記導通孔の壁面に導電性薄膜層を形成する第２ステップと、
前記導電性薄膜層上の所定部位に第２絶縁層を形成すると共に前記第１導体層の他方の面上の所定部位又は全面に絶縁層を形成する第３ステップと、
前記導電性薄膜層上の前記第２絶縁層が形成されていない部位に、めっきによって第１導体配線を形成する第４ステップと、
前記第１導体配線を耐薬液性を有する皮膜で被覆する第５ステップと、
前記第２絶縁層と絶縁層とが対向する部位が、前記第１導体層と第１絶縁層のみで構成されるように、前記第１導体層の他方の面を化学的に溶解させることにより、第２導体配線を形成する第６ステップと、
前記第２絶縁層及び前記皮膜を除去する第７ステップとにより製造されることを特徴とする両面配線基板。 For the substrate material in which the first insulating layer is formed on one surface of the first conductor layer,
A first step of forming a conduction hole penetrating only the first insulating layer or penetrating both the first insulating layer and the first conductor layer from a predetermined portion of the first insulating layer;
A second step of forming a conductive thin film layer on the surface of the first insulating layer and the wall surface of the conduction hole;
A third step of forming a second insulating layer at a predetermined portion on the conductive thin film layer and forming an insulating layer on the predetermined portion or the entire surface of the other surface of the first conductor layer ;
A fourth step of forming a first conductor wiring by plating on a portion of the conductive thin film layer where the second insulating layer is not formed;
A fifth step of coating the first conductor wiring with a film having chemical resistance;
By chemically dissolving the other surface of the first conductor layer so that the portion where the second insulating layer and the insulating layer face each other is constituted only by the first conductor layer and the first insulating layer. A sixth step of forming a second conductor wiring;
A double-sided wiring board manufactured by the seventh step of removing the second insulating layer and the film.
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JPH05218598A (en) * 1992-01-31 1993-08-27 Showa Electric Wire & Cable Co Ltd Printed-wiring board
JPH0645364U (en) * 1992-11-26 1994-06-14 古河電気工業株式会社 Flexible printed circuit board
JP3278302B2 (en) * 1994-09-28 2002-04-30 新光電気工業株式会社 Method for manufacturing double-sided wiring type film carrier
JP2003234572A (en) * 2002-02-06 2003-08-22 Nitto Denko Corp Method of manufacturing double-sided wiring board

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