JP4146815B2 - 光通信用半導体装置の製造方法 - Google Patents
光通信用半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4146815B2 JP4146815B2 JP2004091768A JP2004091768A JP4146815B2 JP 4146815 B2 JP4146815 B2 JP 4146815B2 JP 2004091768 A JP2004091768 A JP 2004091768A JP 2004091768 A JP2004091768 A JP 2004091768A JP 4146815 B2 JP4146815 B2 JP 4146815B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- light receiving
- sealing
- sealing portion
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004891 communication Methods 0.000 title claims description 27
- 230000003287 optical effect Effects 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229920005989 resin Polymers 0.000 claims abstract description 79
- 239000011347 resin Substances 0.000 claims abstract description 79
- 238000007789 sealing Methods 0.000 claims abstract description 69
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 abstract description 8
- 229920000515 polycarbonate Polymers 0.000 abstract description 7
- 239000002482 conductive additive Substances 0.000 abstract description 5
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229920000049 Carbon (fiber) Polymers 0.000 description 6
- 239000004917 carbon fiber Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000004677 Nylon Substances 0.000 description 3
- 229930182556 Polyacetal Natural products 0.000 description 3
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920006324 polyoxymethylene Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Selective Calling Equipment (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
(a) 導電性樹脂の成形が良好に行えず、生産性が良くない、
(b) 導電性樹脂の導通性が悪く、電磁ノイズシールド効果が不十分である、
(c) 実装時、特に半田付け時に加わる熱等によって外観及び導通性が変動(劣化)する、という問題が生じる。
リードフレーム上に受光素子と信号処理部とを搭載すると共に、上記受光素子に上記信号処理部を電気的に接続する工程と、
上記受光素子と信号処理部を透光性樹脂で封止して、凸状の受光用レンズ部を有し上記透光性樹脂からなる第1封止部を作製する工程と、
成形型を用いて上記第1封止部の周りに導電性樹脂を注入して、上記受光用レンズ部の凸面を網状に覆うメッシュ部を有し上記導電性樹脂からなる第2封止部を作製する工程とを備え、
上記成形型は、上記リードフレームの一部からなる信号入出力端子が上記第1封止部の外へ突出する面とは反対の面の側で、上記受光用レンズ部に対向する樹脂注入用ゲートを有することを特徴とする。
i) リードフレーム1(第3リード1c)の搭載部2上に受光チップ3および制御用ICチップ5を搭載するダイボンド工程と、
ii) 導電性ワイヤ6a〜6eを既述のように配線して受光チップ3および制御用ICチップ5等を電気的に接続するワイヤボンド工程と、
iii) 金型を用いて受光チップ3および制御用ICチップ5の周りに赤外透過性樹脂を注入して、赤外透過性樹脂からなる第1封止部7作製する第1封止工程と、
iv) 金型を用いて第1封止部7の周りに導電性樹脂を注入して、導電性樹脂からなる第2封止部8を作製する第2封止工程と
で製造される。
また、ベース樹脂がポリカーボネートである試料であっても、カーボンファイバ含有量が10%以下のもの(試料10)については、初期抵抗値が不良(×)であった。
(a) 導電性樹脂の成形が良好に行えて、生産性が良い、
(b) 導電性樹脂の導通性が良く、電磁ノイズシールド効果が十分である、
(c) 実装時、特に半田付け時に加わる熱等によって外観及び導通性が変動(劣化)しない、
という優れたものが得られることが分かった。また、金属シールドケースを用いてシールドを行う場合に比して、小型,低コストで基板への実装自由度を高めることができる。
まず、この金型41は、上記受光用レンズ部7Aの頂点7Pに対応する部位に入れ子42を有する。これにより、上記第2封止工程でこの金型41に導電性樹脂を注入したとき、金型本体41と入れ子42との間の僅かな隙間から空気が逃げる。したがって、上記導電性樹脂が受光用レンズ部7Aの周りに首尾良く回り込んで、上記メッシュ部31が精度良く形成される。
1a 第1リード
1b 第2リード
1c 第3リード
2 搭載部
3 受光チップ
5 制御用ICチップ
7 第1封止部
8 第2封止部
31 メッシュ部
Claims (2)
- リードフレーム上に受光素子と信号処理部とを搭載すると共に、上記受光素子に上記信号処理部を電気的に接続する工程と、
上記受光素子と信号処理部を透光性樹脂で封止して、凸状の受光用レンズ部を有し上記透光性樹脂からなる第1封止部を作製する工程と、
成形型を用いて上記第1封止部の周りに導電性樹脂を注入して、上記受光用レンズ部の凸面を網状に覆うメッシュ部を有し上記導電性樹脂からなる第2封止部を作製する工程とを備え、
上記成形型は、上記リードフレームの一部からなる信号入出力端子が上記第1封止部の外へ突出する面とは反対の面の側で、上記受光用レンズ部に対向する樹脂注入用ゲートを有することを特徴とする光通信用半導体装置の製造方法。 - 請求項1に記載の半導体製造方法において、
上記樹脂注入用ゲートは、上記受光用レンズ部の周縁部から頂点へ向かって樹脂を注入するように前後方向に傾斜していることを特徴とする光通信用半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004091768A JP4146815B2 (ja) | 2004-03-26 | 2004-03-26 | 光通信用半導体装置の製造方法 |
CNA2005100591093A CN1674775A (zh) | 2004-03-26 | 2005-03-22 | 光通信半导体装置及其制造方法 |
US11/087,860 US20050212100A1 (en) | 2004-03-26 | 2005-03-24 | Semiconductor device for optical communication and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004091768A JP4146815B2 (ja) | 2004-03-26 | 2004-03-26 | 光通信用半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005277296A JP2005277296A (ja) | 2005-10-06 |
JP4146815B2 true JP4146815B2 (ja) | 2008-09-10 |
Family
ID=34988796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004091768A Expired - Fee Related JP4146815B2 (ja) | 2004-03-26 | 2004-03-26 | 光通信用半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050212100A1 (ja) |
JP (1) | JP4146815B2 (ja) |
CN (1) | CN1674775A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153356A (ja) * | 2006-12-15 | 2008-07-03 | Matsushita Electric Works Ltd | 光電変換モジュール |
CN102136523B (zh) * | 2010-12-22 | 2012-11-28 | 木林森股份有限公司 | 眼珠型红外接收器的封装方法、专用模具及制造的产品 |
CN102789026A (zh) * | 2011-05-18 | 2012-11-21 | 亚洲光学股份有限公司 | 光监控模块 |
CN106501903B (zh) * | 2015-09-08 | 2019-07-02 | 许多 | 光电转换器及其制造方法 |
JP7208032B2 (ja) * | 2019-01-28 | 2023-01-18 | キヤノン株式会社 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838319B1 (en) * | 2000-08-31 | 2005-01-04 | Micron Technology, Inc. | Transfer molding and underfilling method and apparatus including orienting the active surface of a semiconductor substrate substantially vertically |
US7026388B2 (en) * | 2001-03-28 | 2006-04-11 | Ube Industries, Ltd. | Conductive resin composition and process for producing the same |
DE60219853T2 (de) * | 2001-07-18 | 2008-01-17 | Mitsubishi Engineering-Plastics Corp. | Thermoplastische Harzzusammensetzung |
JP3991018B2 (ja) * | 2003-09-01 | 2007-10-17 | シャープ株式会社 | 半導体装置 |
-
2004
- 2004-03-26 JP JP2004091768A patent/JP4146815B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-22 CN CNA2005100591093A patent/CN1674775A/zh active Pending
- 2005-03-24 US US11/087,860 patent/US20050212100A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050212100A1 (en) | 2005-09-29 |
CN1674775A (zh) | 2005-09-28 |
JP2005277296A (ja) | 2005-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3991018B2 (ja) | 半導体装置 | |
US7348551B2 (en) | Remote-control light receiving unit and electronic apparatus using the same | |
KR100824154B1 (ko) | 수광 모듈 | |
KR100700188B1 (ko) | 반도체 모듈 | |
JP2005183882A (ja) | 光結合器およびそれを用いた電子機器 | |
JP4146815B2 (ja) | 光通信用半導体装置の製造方法 | |
US6855886B2 (en) | Photodetection sensor | |
JP4486591B2 (ja) | リード端子導出型電子部品 | |
CN100377338C (zh) | 半导体装置及电子设备 | |
JP2966591B2 (ja) | 光半導体装置 | |
US20130280961A1 (en) | Ear jack of mobile terminal | |
US7476036B2 (en) | Optocoupler for converting optical signals into electrical signals and vice versa | |
JP3745156B2 (ja) | 光通信用半導体受光デバイス | |
JPH1074962A (ja) | 赤外線リモコン受光ユニット及びその製造方法 | |
JP5268468B2 (ja) | 表面実装型赤外線受光ユニット、表面実装型赤外線受光ユニット製造方法、および電子機器 | |
JP3066236B2 (ja) | 受光ユニットの製造方法 | |
JP2009043909A (ja) | リモコン受光ユニットおよびこれを搭載した電子機器 | |
US20080298817A1 (en) | Light Receiving Device | |
KR102142122B1 (ko) | 카메라 모듈 | |
JPH11121770A (ja) | リモコン受光ユニット | |
KR101007120B1 (ko) | 카메라 모듈 및 그 제조 방법 | |
JP5121576B2 (ja) | 遠隔制御用受光装置および電子機器 | |
JP2015198051A (ja) | コネクタのシールド接続構造 | |
JP2000236102A (ja) | 電子部品 | |
KR101039308B1 (ko) | 수신기의 프리앰프 구조 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060125 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080603 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080620 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110627 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120627 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120627 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130627 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |