JP4137840B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP4137840B2 JP4137840B2 JP2004139823A JP2004139823A JP4137840B2 JP 4137840 B2 JP4137840 B2 JP 4137840B2 JP 2004139823 A JP2004139823 A JP 2004139823A JP 2004139823 A JP2004139823 A JP 2004139823A JP 4137840 B2 JP4137840 B2 JP 4137840B2
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 239000011347 resin Substances 0.000 claims description 125
- 229920005989 resin Polymers 0.000 claims description 125
- 238000003825 pressing Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 description 39
- 230000001070 adhesive effect Effects 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
図1は、本実施の形態1に係る電力用半導体装置の構成を示す断面図である。絶縁基板2の表主面上に電極パターン4を介して電力用半導体素子(以下単に半導体素子と称する場合がある)6,7が並列に配置されている。半導体素子6は、例えばダイオードである。また半導体素子7は、例えばIGBT(Insulated Gate Bipolar Transistor)である。そして半導体素子6と半導体素子7の図示しない上部電極同士が、アルミワイヤ8等の金属配線で接続されている。半導体素子6,7の図示しない下部電極は、電極パターン4と電気的に接続されている。そして、電極パターン4と外部電極25がアルミワイヤ10で接続されている。また、半導体素子7の図示しない上部電極と外部電極14が、アルミワイヤ9で接続されている。
図6は本実施の形態に用いられるベース板1の上面図を示す。本実施の形態においては、ベース板1上の樹脂ケース1との接合面に対応する位置に、金属ワイヤ31が配置されている。金属ワイヤ31は所定の長さに切断されており、所定の間隔毎に長手方向が樹脂ケース1の接合面の周方向に沿うように配置されている。金属ワイヤ31は、半田等の接着材32により、ベース板1に接合されている。その他の構成は実施の形態1と同様であり、同一の構成には同一の符号を付し、重複する説明は省略する。
図8は本実施の形態3に用いられる樹脂ケース12の下面図を示している。本実施の形態においては、樹脂ケース12に突起部19が形成されている。突起部19は、樹脂ケース12のうち、ベース板1への接合面に形成されている。突起部19は、円柱状の形状を備えている。そして突起部19は、所定間隔毎に配置されている。
図10は、本実施の形態4に用いられる樹脂ケース12の下面図を示す図である。本実施の形態では、突起部19の両側に2つの溝部61が設けられている。2つの溝部61は、樹脂ケース12の接合面に周状に形成されている。そして突起部19を挟んで内側と外側にそれぞれ形成されている。その他の構成は実施の形態3と同一であり、同一の構成には同一の符号を付し、重複する説明は省略する。
図13は、本実施の形態に係る電力用半導体装置の上面図である。また図14は、図13のB−B線断面図を示している。図15は、図13のC−C線断面図を示している。図14に示すように、本実施の形態に係る電力用半導体装置は、複数のベース板(部分ベース板)1を備えている。ここで本実施の形態では、3つのベース板1を備えた例を示している。
Claims (3)
- ベース板と、
前記ベース板上に絶縁基板を介して接合された半導体素子と、
前記半導体素子を囲うように、前記ベース板上に接合された樹脂ケースを備える電力用半導体装置であって、
前記ベース板と前記樹脂ケースの接合面のうち、前記ベース板若しくは前記樹脂ケースの少なくとも一方に形成され、所定の高さを有する突起部と、
前記樹脂ケースと前記ベース板を押圧して接合する押圧手段と、
を備え、
前記押圧手段は、前記樹脂ケースと反対側から前記ベース板を前記樹脂ケースに螺着する螺着体であって、
前記螺着体の端が前記ベース板の裏主面より突出しないことを特徴とする電力用半導体装置。 - 前記突起部は、所定の配列線に沿って設けられ、
前記螺着体は、前記配列線上に配列されたことを特徴とする請求項1に記載の電力用半導体装置。 - ベース板と、
前記ベース板上に絶縁基板を介して接合された半導体素子と、
前記半導体素子を囲うように、前記ベース板上に接合された樹脂ケースを備える電力用半導体装置であって、
前記ベース板と前記樹脂ケースの接合面のうち、前記ベース板若しくは前記樹脂ケースの少なくとも一方に形成され、所定の高さを有する突起部と、
前記樹脂ケースと前記ベース板を押圧して接合する押圧手段と、
を備え、
前記樹脂ケースは、前記接合面のうち、前記突起部に対応する部分の両側に設けられた溝部を有することを特徴とする電力用半導体装置。
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JP2004139823A JP4137840B2 (ja) | 2004-05-10 | 2004-05-10 | 電力用半導体装置 |
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JP2004139823A JP4137840B2 (ja) | 2004-05-10 | 2004-05-10 | 電力用半導体装置 |
Publications (2)
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JP2005322784A JP2005322784A (ja) | 2005-11-17 |
JP4137840B2 true JP4137840B2 (ja) | 2008-08-20 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4894783B2 (ja) * | 2008-02-25 | 2012-03-14 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5602077B2 (ja) * | 2011-03-23 | 2014-10-08 | 三菱電機株式会社 | 半導体装置 |
WO2015045648A1 (ja) * | 2013-09-30 | 2015-04-02 | 富士電機株式会社 | 半導体装置、半導体装置の組み立て方法、半導体装置用部品及び単位モジュール |
EP3166140B1 (en) * | 2014-07-04 | 2020-06-03 | Mitsubishi Materials Corporation | Substrate unit for power modules, and power module |
JP6316434B2 (ja) * | 2014-07-31 | 2018-04-25 | 三菱電機株式会社 | 半導体装置 |
CN107112316B (zh) * | 2014-12-26 | 2020-04-21 | 三菱电机株式会社 | 半导体模块 |
WO2018055667A1 (ja) * | 2016-09-20 | 2018-03-29 | 三菱電機株式会社 | 半導体装置 |
JP6811580B2 (ja) * | 2016-10-20 | 2021-01-13 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
JP6827402B2 (ja) * | 2017-11-17 | 2021-02-10 | 三菱電機株式会社 | 半導体装置 |
DE112019007915T5 (de) * | 2019-11-27 | 2022-09-08 | Mitsubishi Electric Corporation | Halbleitermodul |
JP7482833B2 (ja) | 2021-05-27 | 2024-05-14 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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