JP4111625B2 - Substrate cooling stand for vacuum processing equipment - Google Patents
Substrate cooling stand for vacuum processing equipment Download PDFInfo
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- JP4111625B2 JP4111625B2 JP09173699A JP9173699A JP4111625B2 JP 4111625 B2 JP4111625 B2 JP 4111625B2 JP 09173699 A JP09173699 A JP 09173699A JP 9173699 A JP9173699 A JP 9173699A JP 4111625 B2 JP4111625 B2 JP 4111625B2
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【０００１】
【発明の属する技術分野】
本発明は真空処理装置の基板冷却台に係わり、特に、半導体製造用ウエハのアッシング、エッチング等に使用される真空処理装置の基板冷却台に関する。
【０００２】
【従来の技術】
半導体製造用シリコンウエハ等の被処理基板を減圧雰囲気下で処理するための真空処理装置として、被処理基板の表面の薄膜をエッチング処理するエッチング装置、或いは被処理基板の表面のレジストを除去するアッシング装置がある。
【０００３】
また、エッチング／アッシング装置の一つに、処理室から離れた位置で生成したマイクロ波プラズマを利用して活性種を生成し、この活性種を被処理基板の表面に供給してエッチング又はアッシングを行う放電分離型のケミカルドライエッチング装置（ＣＤＥ装置）がある。なお、このＣＤＥ装置を用いてエッチングを行う場合にはプロセスガスとして酸素（Ｏ2）、酸素（Ｏ2）にＣＦ4、ＮＦ3等のフッ素系ガスを添加した混合ガス等が使用される。
【０００４】
半導体製造用ウエハに対してアッシングやエッチングの処理を行うための半導体製造装置（アッシャー又はエッチャーとも呼ばれている。）においては、減圧雰囲気下においてウエハを加熱しながら処理を行う場合がある。処理後のウエハはカセットに戻されて処理が終了するが、カセットは通常樹脂製であるために熱に弱く、高温のウエハをそのままカセットに戻すとカセットが変形し、或いは溶融してしまう。そこで、カセットに戻す前にウエハを冷却しなければならない。
【０００５】
また、従来は多数枚のウエハをバッチ処理する方法が一般的であったが、近年、その加工の安定性と制御性の観点から、ウエハを１枚ずつ処理する枚葉処理タイプの真空処理装置が普及している。
【０００６】
図３は、処理後のウエハＷを減圧チャンバー７の内部で冷却するための従来の水冷式の基板冷却台１０を示した縦断面図であり、この基板冷却台１０はウエハＷを載置する部分である円盤状の基板載置部１１と、この基板載置部１１の裏面中央部から下方に向けて突設された支軸部材１２とを備えている。
【０００７】
基板載置部１１の上面は、ウエハＷを載置するための、全面にわたって平坦な載置面１３を形成している。基板載置部１１及び支軸部材１２の内部には冷却水流路１４が形成されており、この冷却水流路１４内に冷却水を流通させることによって基板載置部１１を冷却し、これによって載置面１３上のウエハＷを冷却するようになっている。
【０００８】
【発明が解決しようとする課題】
ところが、図３に示した基板冷却台１０を用いて高温のウエハＷを減圧雰囲気下において冷却する場合、次のような問題がある。
【０００９】
すなわち、ウエハＷの裏面（下面）が急激に冷却されると瞬時に、ウエハＷの裏面と表面（上面）との間に温度差が生じ、両面間の熱膨張の差から、図３に示したようにウエハＷは上に凸状に反り返ってしまう。
【００１０】
その結果、基板冷却台１０の載置面１３とウエハＷの裏面との接触は周縁部のみとなり、接触面積の減少から冷却効率が落ちてしまう。また、ウエハＷの周縁部と中央部とで温度差が生じてしまう。このため、ウエハＷの冷却に要する時間が長期化してしまう。また、ウエハ内部の温度差が応力となり、ウエハＷを破損させてしまう恐れがある。
【００１１】
処理後のウエハＷの冷却に長時間を要するとスループットの低下がもたらされるので、冷却時間の短縮が望まれており、特に、枚葉処理タイプの真空処理装置においては１枚ずつ冷却する必要があるため、冷却時間の短縮が強く望まれている。
【００１２】
また、前記の如く冷却時に生じたウエハ内部の温度差によって応力が発生し、この応力によってウエハＷの破損がもたらされることを確実に防止しなければならない。
【００１３】
本発明は、上述した種々の問題点を考慮してなされたものであって、処理後の高温の被処理基板を効果的に冷却することができる真空処理装置の基板冷却台を提供することを目的とする。
【００１４】
【課題を解決するための手段】
本発明は、減圧雰囲気下で処理された後の被処理基板を冷却するための真空処理装置の基板冷却台において、前記被処理基板を載置する載置面を有する基板載置部と、この基板載置部を冷却する冷却機構と、を備え、前記載置面は、前記冷却機構による冷却時に変形した前記被処理基板の凹形の裏面形状に対応するように凸形に形成され、冷却後に平坦となった前記被処理基板を安定して支持するために前記載置面の中央領域に平坦部を形成したことを特徴とする。
【００１５】
また、前記載置面は球面状又は円錐面状に形成することができる。
【００１７】
【発明の実施の形態】
以下、本発明の一実施形態による真空処理装置の基板冷却台について図面を参照して説明する。
【００１８】
図１は本実施形態による基板冷却台１の概略構成を示した縦断面図であり、この基板冷却台１は、減圧雰囲気下で加熱しながらエッチング処理又はアッシング処理された円形の被処理基板Ｗを、真空処理装置の減圧チャンバー７の内部において冷却するために使用される。被処理基板Ｗは、具体的には半導体製造用シリコンウエハである。
【００１９】
なお、冷却後のウエハＷは真空処理装置の内部に配置されたカセット（図示せず）に収納される。このようにウエハ（被処理基板）Ｗのエッチング／アッシング処理、処理後の冷却、及びカセットへの収納は、外界から隔離された真空処理装置の内部（真空領域）にて行われる。
【００２０】
図１に示したようにこの基板冷却台１は、ウエハＷを載置する部分である円盤状の基板載置部２と、この基板載置部２の裏面中央部から下方に向けて突設された支軸部材３を備えている。基板載置部２は、ウエハＷの外径と略同一又はこれよりも大きな外径を備えている。
【００２１】
基板載置部２の上面は、ウエハＷを載置するための載置面４を形成しており、この載置面４は、図１に示したように冷却時に変形したウエハＷの凹形の裏面形状に対応するように凸形に形成されている。より具体的には、載置面４は球面状に加工されている。また、載置面４を円錐面形状に加工することもできる。円弧が大きいために円錐に近似しており、また加工が簡易であるため工業的に有利な場合もあるためである。
【００２２】
基板載置部２及び支軸部材３の内部には、基板載置部２を冷却する冷却機構を構成する冷却水流路５が形成されており、この冷却水流路５内に冷却水を流通させることによって基板載置部２を冷却し、これによって載置面４上のウエハＷを冷却するようになっている。
【００２３】
また、載置面４の形状を単に上に凸の形状としただけでは、冷却完了後に反りがなくなって平坦となったウエハＷは、載置面４の中心部の小さな面積で支持される格好となり、ウエハＷの支持が不安定な状態になる恐れがある。
【００２４】
そこで、本実施形態の一変形例としては、冷却後に平坦となったウエハＷを安定して支持するために、図２に示したように載置面４の中央領域に平坦部６を形成することが望ましい。
【００２５】
以上述べたように本実施形態による真空処理装置の基板冷却台１によれば、ウエハＷを載置する載置面４の形状を、冷却時に変形したウエハＷの凹形の裏面形状に対応するように凸形に形成したので、冷却時にウエハＷの裏面と載置面４とが全面で接触し、これにより冷却効率を大幅に高めることができる。
【００２６】
また、前記の如く冷却時にウエハＷの裏面と載置面４とが全面で接触するので、ウエハＷの周辺部と中心部との間に大きな温度差が生じることがなく、このため、ウエハ内部の温度差により応力が発生してウエハＷを破損するようなことがない。
【００２７】
【発明の効果】
以上述べたように本発明による真空処理装置の基板冷却台によれば、被処理基板を載置する載置面の形状を、冷却時に変形した被処理基板の凹形の裏面形状に対応するように凸形に形成したので、冷却時において被処理基板の裏面と載置面との間で十分な接触面積が確保され、これにより冷却効率を大幅に高めることができる。
【００２８】
また、前記の如く冷却時において被処理基板の裏面と載置面との間で十分な接触面積が確保されるので、被処理基板の周辺部と中心部との間に大きな温度差が生じることがなく、このため、被処理基板内部の温度差により応力が発生して被処理基板を破損するようなことがない。
【図面の簡単な説明】
【図１】本発明の一実施形態による真空処理装置の基板冷却台の概略構成を示した縦断面図。
【図２】図１に示した実施形態の一変形例による真空処理装置の基板冷却台の概略構成を示した縦断面図。
【図３】従来の真空処理装置の基板冷却台の概略構成を示した縦断面図。
【符号の説明】
１ 基板冷却台
２ 基板載置部
３ 支軸部材
４ 載置面
５ 冷却水流路
６ 平坦部
Ｗ ウエハ（被処理基板）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate cooling table of a vacuum processing apparatus, and more particularly to a substrate cooling table of a vacuum processing apparatus used for ashing, etching, etc. of a semiconductor manufacturing wafer.
[0002]
[Prior art]
As a vacuum processing apparatus for processing a substrate to be processed such as a silicon wafer for semiconductor manufacturing under a reduced pressure atmosphere, an etching apparatus for etching a thin film on the surface of the substrate to be processed, or ashing for removing a resist on the surface of the substrate to be processed There is a device.
[0003]
Further, in one of the etching / ashing apparatuses, active species are generated using microwave plasma generated at a position away from the processing chamber, and this active species is supplied to the surface of the substrate to be processed for etching or ashing. There is a discharge separation type chemical dry etching apparatus (CDE apparatus) to be performed. The oxygen (O 2) as a process gas in the case of performing etching by using the CDE system, oxygen (O 2) in CF 4, NF 3 mixed gas obtained by adding a fluorine-based gas or the like is used.
[0004]
In a semiconductor manufacturing apparatus (also called asher or etcher) for performing ashing or etching processing on a semiconductor manufacturing wafer, processing may be performed while heating the wafer in a reduced pressure atmosphere. The processed wafer is returned to the cassette and the processing ends. However, since the cassette is usually made of resin, it is vulnerable to heat, and if the high temperature wafer is returned to the cassette as it is, the cassette is deformed or melted. Therefore, the wafer must be cooled before returning it to the cassette.
[0005]
Conventionally, a batch processing method for a large number of wafers has been common, but in recent years, from the viewpoint of stability and controllability of processing, a single wafer processing type vacuum processing apparatus that processes wafers one by one. Is popular.
[0006]
FIG. 3 is a longitudinal sectional view showing a conventional water-cooled substrate cooling table 10 for cooling the processed wafer W inside the decompression chamber 7, and the substrate cooling table 10 places the wafer W thereon. A disk-shaped
[0007]
An upper surface of the
[0008]
[Problems to be solved by the invention]
However, when the high-temperature wafer W is cooled in a reduced-pressure atmosphere using the substrate cooling table 10 shown in FIG. 3, there are the following problems.
[0009]
That is, when the back surface (lower surface) of the wafer W is rapidly cooled, a temperature difference is instantly generated between the back surface and the front surface (upper surface) of the wafer W, and the difference in thermal expansion between both surfaces is shown in FIG. As described above, the wafer W warps upward in a convex shape.
[0010]
As a result, the contact between the mounting surface 13 of the substrate cooling table 10 and the back surface of the wafer W is only at the peripheral edge, and the cooling efficiency decreases due to the reduction in the contact area. In addition, a temperature difference occurs between the peripheral edge portion and the central portion of the wafer W. For this reason, the time required for cooling the wafer W is prolonged. Further, the temperature difference inside the wafer becomes stress, which may damage the wafer W.
[0011]
If a long time is required for cooling the wafer W after processing, the throughput is lowered. Therefore, it is desired to reduce the cooling time. In particular, in a single wafer processing type vacuum processing apparatus, it is necessary to cool one by one. Therefore, it is strongly desired to shorten the cooling time.
[0012]
Further, it is necessary to reliably prevent the stress caused by the temperature difference inside the wafer generated during the cooling as described above, and the damage of the wafer W caused by this stress.
[0013]
The present invention has been made in consideration of the above-mentioned various problems, and provides a substrate cooling table of a vacuum processing apparatus capable of effectively cooling a high-temperature processed substrate after processing. Objective.
[0014]
[Means for Solving the Problems]
The present invention provides a substrate cooling stage of a vacuum processing apparatus for cooling a substrate to be processed after being processed in a reduced pressure atmosphere, a substrate mounting portion having a mounting surface on which the substrate to be processed is mounted, comprising a cooling mechanism for cooling the substrate mounting part, and the mounting surface is formed in a convex shape so as to correspond to the concave back surface shape of the substrate to be processed which is deformed during cooling by the cooling mechanism, cooling In order to stably support the substrate to be processed which has become flat later, a flat portion is formed in the central region of the mounting surface .
[0015]
Further, the mounting surface can be formed in a spherical shape or a conical surface shape.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a substrate cooling table of a vacuum processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
[0018]
FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate cooling table 1 according to the present embodiment. This substrate cooling table 1 is a circular target substrate W that has been etched or ashed while being heated in a reduced-pressure atmosphere. Is used to cool the inside of the vacuum chamber 7 of the vacuum processing apparatus. The substrate W to be processed is specifically a silicon wafer for manufacturing semiconductors.
[0019]
The cooled wafer W is stored in a cassette (not shown) arranged inside the vacuum processing apparatus. As described above, etching / ashing processing of the wafer (substrate to be processed) W, cooling after processing, and storage in the cassette are performed inside the vacuum processing apparatus (vacuum region) isolated from the outside.
[0020]
As shown in FIG. 1, the substrate cooling table 1 is provided with a disk-shaped
[0021]
The upper surface of the
[0022]
A cooling
[0023]
Further, if the shape of the mounting surface 4 is simply an upwardly convex shape, the wafer W that has been flattened after the completion of cooling is supported by a small area at the center of the mounting surface 4. Therefore, the support of the wafer W may become unstable.
[0024]
Therefore, as a modification of the present embodiment, in order to stably support the wafer W that has become flat after cooling, a flat portion 6 is formed in the central region of the mounting surface 4 as shown in FIG. It is desirable.
[0025]
As described above, according to the substrate cooling table 1 of the vacuum processing apparatus according to the present embodiment, the shape of the mounting surface 4 on which the wafer W is mounted corresponds to the concave back surface shape of the wafer W deformed during cooling. Thus, the back surface of the wafer W and the mounting surface 4 are in contact with each other at the time of cooling, so that the cooling efficiency can be greatly increased.
[0026]
In addition, since the back surface of the wafer W and the mounting surface 4 are in contact with each other during cooling as described above, there is no large temperature difference between the peripheral portion and the central portion of the wafer W. This prevents the wafer W from being damaged due to the temperature difference.
[0027]
【The invention's effect】
As described above, according to the substrate cooling stand of the vacuum processing apparatus according to the present invention, the shape of the mounting surface on which the substrate to be processed is mounted corresponds to the concave back surface shape of the substrate to be processed deformed during cooling. In this case, a sufficient contact area is ensured between the back surface of the substrate to be processed and the mounting surface during cooling, whereby the cooling efficiency can be greatly increased.
[0028]
In addition, since a sufficient contact area is ensured between the back surface and the mounting surface of the substrate to be processed during cooling as described above, a large temperature difference occurs between the peripheral portion and the center portion of the substrate to be processed. Therefore, stress is not generated due to a temperature difference inside the substrate to be processed, and the substrate to be processed is not damaged.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate cooling stand of a vacuum processing apparatus according to an embodiment of the present invention.
2 is a longitudinal sectional view showing a schematic configuration of a substrate cooling stand of a vacuum processing apparatus according to a modification of the embodiment shown in FIG. 1;
FIG. 3 is a longitudinal sectional view showing a schematic configuration of a substrate cooling table of a conventional vacuum processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate cooling stand 2
Claims (2)
前記被処理基板を載置する載置面を有する基板載置部と、
この基板載置部を冷却する冷却機構と、
を備え、
前記載置面は、前記冷却機構による冷却時に変形した前記被処理基板の凹形の裏面形状に対応するように凸形に形成され、冷却後に平坦となった前記被処理基板を安定して支持するために前記載置面の中央領域に平坦部を形成したことを特徴とする真空処理装置の基板冷却台。In a substrate cooling stand of a vacuum processing apparatus for cooling a substrate to be processed after being processed in a reduced pressure atmosphere,
A substrate mounting portion having a mounting surface for mounting the substrate to be processed;
A cooling mechanism for cooling the substrate placement unit;
With
The mounting surface is formed in a convex shape so as to correspond to the concave back surface shape of the substrate to be processed deformed during cooling by the cooling mechanism, and stably supports the substrate to be processed that has become flat after cooling. In order to achieve this, a substrate cooling table of a vacuum processing apparatus, wherein a flat portion is formed in a central region of the mounting surface .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09173699A JP4111625B2 (en) | 1999-03-31 | 1999-03-31 | Substrate cooling stand for vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09173699A JP4111625B2 (en) | 1999-03-31 | 1999-03-31 | Substrate cooling stand for vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000286243A JP2000286243A (en) | 2000-10-13 |
| JP4111625B2 true JP4111625B2 (en) | 2008-07-02 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09173699A Expired - Lifetime JP4111625B2 (en) | 1999-03-31 | 1999-03-31 | Substrate cooling stand for vacuum processing equipment |
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| Country | Link |
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| JP (1) | JP4111625B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10111313B2 (en) | 2012-03-27 | 2018-10-23 | Shibaura Mechatronics Corporation | Plasma processing apparatus and plasma processing method |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100270004A1 (en) * | 2005-05-12 | 2010-10-28 | Landess James D | Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates |
| US7960297B1 (en) | 2006-12-07 | 2011-06-14 | Novellus Systems, Inc. | Load lock design for rapid wafer heating |
| US8052419B1 (en) | 2007-11-08 | 2011-11-08 | Novellus Systems, Inc. | Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| KR20140119726A (en) | 2012-01-06 | 2014-10-10 | 노벨러스 시스템즈, 인코포레이티드 | Adaptive heat transfer methods and systems for uniform heat transfer |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
-
1999
- 1999-03-31 JP JP09173699A patent/JP4111625B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10111313B2 (en) | 2012-03-27 | 2018-10-23 | Shibaura Mechatronics Corporation | Plasma processing apparatus and plasma processing method |
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| Publication number | Publication date |
|---|---|
| JP2000286243A (en) | 2000-10-13 |
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