JP4104154B2 - 液晶ポリマーのエッチング液及び液晶ポリマーのエッチング方法。 - Google Patents
液晶ポリマーのエッチング液及び液晶ポリマーのエッチング方法。 Download PDFInfo
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- JP4104154B2 JP4104154B2 JP2005102888A JP2005102888A JP4104154B2 JP 4104154 B2 JP4104154 B2 JP 4104154B2 JP 2005102888 A JP2005102888 A JP 2005102888A JP 2005102888 A JP2005102888 A JP 2005102888A JP 4104154 B2 JP4104154 B2 JP 4104154B2
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- Prior art keywords
- liquid crystal
- crystal polymer
- etching
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- 238000005530 etching Methods 0.000 title claims description 138
- 229920000106 Liquid crystal polymer Polymers 0.000 title claims description 89
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims description 89
- 238000000034 method Methods 0.000 title claims description 21
- 239000000243 solution Substances 0.000 claims description 74
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 42
- 239000003513 alkali Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 21
- 150000001414 amino alcohols Chemical class 0.000 claims description 15
- 229920000728 polyester Polymers 0.000 claims description 15
- 239000007864 aqueous solution Substances 0.000 claims description 13
- -1 aliphatic amino alcohol Chemical class 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 33
- 229910052802 copper Inorganic materials 0.000 description 33
- 239000004973 liquid crystal related substance Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 238000012360 testing method Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000002585 base Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000010959 steel Substances 0.000 description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 238000006460 hydrolysis reaction Methods 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229920000544 Gore-Tex Polymers 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920006267 polyester film Polymers 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 239000004645 polyester resin Substances 0.000 description 3
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 3
- 229910001950 potassium oxide Inorganic materials 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- BSIUFWMDOOFBSP-UHFFFAOYSA-N 2-azanylethanol Chemical compound NCCO.NCCO BSIUFWMDOOFBSP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 description 1
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- BESJRHHIPGWPTC-UHFFFAOYSA-N azane;copper Chemical compound N.[Cu] BESJRHHIPGWPTC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910001389 inorganic alkali salt Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C11D2111/22—
Description
材料:「BIAC」はジャパンゴアテックス株式会社の銅張り液晶ポリマーフィルム基材、「VECSTAR」は新日本製鉄化学株式会社の銅張り液晶ポリマーフィルム基材である。
Claims (5)
- 液晶ポリマーのエッチング液において、30重量%以上35重量%未満のアルカリ金属水酸化物などの無機アルカリ化合物と、45〜50重量%の分子中に少なくとも1個以上のアミノ基と水酸基を有する脂肪族アミノアルコール及び水とからなり、かつ、全アルカリ成分濃度(無機アルカリ化合物とアミノアルコールの合計)が75重量%〜80重量%の水溶液であることを特徴とする液晶ポリマーのエッチング液。
- 前記アルカリ金属水酸化物が水酸化カリウムまたは水酸化ナトリウムであり、前記脂肪族アミノアルコールが2−アミノエタノールであることを特徴とする請求項1に記載の液晶ポリマーのエッチング液。
- 前記液晶ポリマーが全芳香族ポリエステルであることを特徴とする請求項1または請求項2に記載の液晶ポリマーのエッチング液。
- 請求項1〜3のいずれか一つに記載の液晶ポリマーのエッチング液を用いて、金属張り液晶ポリマーフィルム基材をエッチングすることを特徴とする液晶ポリマーのエッチング方法。
- 前記液晶ポリマーのエッチング液の液温度が60°C以上90°C以下であることを特徴とする請求項4に記載の液晶ポリマーのエッチング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005102888A JP4104154B2 (ja) | 2005-03-31 | 2005-03-31 | 液晶ポリマーのエッチング液及び液晶ポリマーのエッチング方法。 |
TW095110913A TW200641101A (en) | 2005-03-31 | 2006-03-29 | Etching solution for liquid crystal polymer and method for etching liquid crystal polymer |
KR1020060028747A KR20060105541A (ko) | 2005-03-31 | 2006-03-30 | 액정 폴리머의 에칭액 및 액정 폴리머의 에칭방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005102888A JP4104154B2 (ja) | 2005-03-31 | 2005-03-31 | 液晶ポリマーのエッチング液及び液晶ポリマーのエッチング方法。 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006282791A JP2006282791A (ja) | 2006-10-19 |
JP4104154B2 true JP4104154B2 (ja) | 2008-06-18 |
Family
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Family Applications (1)
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JP2005102888A Active JP4104154B2 (ja) | 2005-03-31 | 2005-03-31 | 液晶ポリマーのエッチング液及び液晶ポリマーのエッチング方法。 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4104154B2 (ja) |
KR (1) | KR20060105541A (ja) |
TW (1) | TW200641101A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113169249A (zh) * | 2018-10-30 | 2021-07-23 | 三星显示有限公司 | 发光二极管结构及发光二极管制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008210891A (ja) * | 2007-02-23 | 2008-09-11 | Fujikura Ltd | フレキシブルプリント基板 |
TW201842165A (zh) * | 2017-04-06 | 2018-12-01 | 日商三菱製紙股份有限公司 | 樹脂組成物用之蝕刻液及蝕刻方法 |
WO2020085447A1 (ja) * | 2018-10-24 | 2020-04-30 | 三菱製紙株式会社 | 樹脂組成物のエッチング液及びエッチング方法 |
JP6805397B1 (ja) * | 2019-04-03 | 2020-12-23 | 三菱製紙株式会社 | 液晶ポリマー用エッチング液及び液晶ポリマーのエッチング方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001288286A (ja) * | 2000-02-01 | 2001-10-16 | Toray Ind Inc | エッチング方法 |
JP2001310959A (ja) * | 2000-02-23 | 2001-11-06 | Toray Ind Inc | 樹脂膜のウエットエッチング用エッチング液及びそれを用いて成るエッチング方法 |
US6923919B2 (en) * | 2000-07-18 | 2005-08-02 | 3M Innovative Properties Company | Liquid crystal polymers for flexible circuits |
JP2003261699A (ja) * | 2002-03-08 | 2003-09-19 | Toray Eng Co Ltd | 液晶ポリマー用エッチング液及びそれを用いるエッチング方法 |
JP3929925B2 (ja) * | 2003-04-10 | 2007-06-13 | 東レエンジニアリング株式会社 | 金属張り液晶ポリエステル基材の製造方法 |
-
2005
- 2005-03-31 JP JP2005102888A patent/JP4104154B2/ja active Active
-
2006
- 2006-03-29 TW TW095110913A patent/TW200641101A/zh unknown
- 2006-03-30 KR KR1020060028747A patent/KR20060105541A/ko not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113169249A (zh) * | 2018-10-30 | 2021-07-23 | 三星显示有限公司 | 发光二极管结构及发光二极管制造方法 |
US20220013693A1 (en) * | 2018-10-30 | 2022-01-13 | Samsung Display Co., Ltd. | Light emitting element structure and method of fabricating a light emitting element |
US11949045B2 (en) * | 2018-10-30 | 2024-04-02 | Samsung Display Co., Ltd. | Light emitting element structure and method of fabricating a light emitting element |
CN113169249B (zh) * | 2018-10-30 | 2024-05-07 | 三星显示有限公司 | 发光元件结构及制造发光元件的方法 |
Also Published As
Publication number | Publication date |
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TW200641101A (en) | 2006-12-01 |
KR20060105541A (ko) | 2006-10-11 |
JP2006282791A (ja) | 2006-10-19 |
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