JP4033883B2 - 2ビーム半導体レーザ装置 - Google Patents
2ビーム半導体レーザ装置 Download PDFInfo
- Publication number
- JP4033883B2 JP4033883B2 JP2005514750A JP2005514750A JP4033883B2 JP 4033883 B2 JP4033883 B2 JP 4033883B2 JP 2005514750 A JP2005514750 A JP 2005514750A JP 2005514750 A JP2005514750 A JP 2005514750A JP 4033883 B2 JP4033883 B2 JP 4033883B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- beam semiconductor
- submount
- laser element
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Description
出射側を前方に向けた前記2ビーム半導体レーザ素子が前部に取り付けられるとともに、第1、第2半導体レーザ素子の電極にそれぞれ接して接続される第1、第2電極パッドを有したサブマウントと、
サブマウントが搭載された主フレームと、
主フレームとは独立した配線用の第1、第2の副フレームと、
を備え、主フレームと第1、第2の副フレームを絶縁性の樹脂成形部により一体化してフレームパッケージが構成された2ビーム半導体レーザ装置において、
サブマウントと第1、第2の副フレームとの間をそれぞれ第1、第2のワイヤーにより接続し、
第1、第2電極パッドは前記2ビーム半導体レーザ素子の後方に延びて形成され、前記2ビーム半導体レーザ素子の後方でそれぞれ第1、第2のワイヤの一端がワイヤーボンディングされることを特徴とする2ビーム半導体レーザ装置。
12、14、16、67、68、69 ワイヤー
22、82 フレーム
23、85 樹脂成形部
24、86 主フレーム
24a、86a 素子配置部
25、26、87、88 副フレーム
27、85a レーザ出射用窓
28、85b 枠部
29、29’ 先端部
55 第1発光部
59 第2発光部
60 n側共通電極
61 第1p側電極
62 第2p側電極
63 サブマウント
64 第1電極パッド
65 第2電極パッド
66 光検出器
80 半導体レーザ装置
LDC 2ビーム半導体レーザ素子
LD1 第1半導体レーザ素子
LD2 第2半導体レーザ素子
Claims (5)
- 独立して駆動可能な第1、第2半導体レーザ素子を基板上に一体に設けた2ビーム半導体レーザ素子と、
出射側を前方に向けた前記2ビーム半導体レーザ素子が前部に取り付けられるとともに、第1、第2半導体レーザ素子の電極にそれぞれ接して接続される第1、第2電極パッドを有したサブマウントと、
サブマウントが搭載された主フレームと、
主フレームとは独立した配線用の第1、第2の副フレームと、
を備え、主フレームと第1、第2の副フレームを絶縁性の樹脂成形部により一体化してフレームパッケージが構成された2ビーム半導体レーザ装置において、
サブマウントと第1、第2の副フレームとの間をそれぞれ第1、第2のワイヤーにより接続し、
第1、第2電極パッドは前記2ビーム半導体レーザ素子の後方に延びて形成され、前記2ビーム半導体レーザ素子の後方でそれぞれ第1、第2のワイヤの一端がワイヤーボンディングされることを特徴とする2ビーム半導体レーザ装置。 - 第1、第2電極パッドが前記サブマウントの後端でワイヤーボンディングされることを特徴とする請求項1に記載の2ビーム半導体レーザ装置。
- 前記2ビーム半導体レーザ素子の後端から第1、第2電極パッドがワイヤーボンディングされる位置までの距離を300μm以下にしたことを特徴とする請求項1または請求項2に記載の2ビーム半導体レーザ装置。
- 前記サブマウントの横幅を400μm以上700μm以下にしたことを特徴とする請求項1〜請求項3のいずれかに記載の2ビーム半導体レーザ装置。
- 前記2ビーム半導体レーザ素子と前記主フレームとを第3のワイヤーにより接続し、
3つの端子を有する3端子型にしたことを特徴とする請求項1〜請求項4のいずれかに記載の2ビーム半導体レーザ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003355478 | 2003-10-15 | ||
JP2003355478 | 2003-10-15 | ||
PCT/JP2004/015011 WO2005039001A1 (ja) | 2003-10-15 | 2004-10-12 | 2ビーム半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005039001A1 JPWO2005039001A1 (ja) | 2007-11-22 |
JP4033883B2 true JP4033883B2 (ja) | 2008-01-16 |
Family
ID=34463169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005514750A Expired - Fee Related JP4033883B2 (ja) | 2003-10-15 | 2004-10-12 | 2ビーム半導体レーザ装置 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7724798B2 (ja) |
JP (1) | JP4033883B2 (ja) |
KR (1) | KR100785203B1 (ja) |
CN (1) | CN100502177C (ja) |
TW (1) | TWI256757B (ja) |
WO (1) | WO2005039001A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060108672A1 (en) * | 2004-11-24 | 2006-05-25 | Brennan John M | Die bonded device and method for transistor packages |
JP2007048839A (ja) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | 半導体素子 |
US20070116071A1 (en) | 2005-11-22 | 2007-05-24 | Nlight Photonics Corporation | Modular diode laser assembly |
US20070115617A1 (en) * | 2005-11-22 | 2007-05-24 | Nlight Photonics Corporation | Modular assembly utilizing laser diode subassemblies with winged mounting blocks |
US7586963B2 (en) | 2005-11-22 | 2009-09-08 | Nlight Photonics Corporation | Modular diode laser assembly |
US7436868B2 (en) | 2005-11-22 | 2008-10-14 | Nlight Photonics Corporation | Modular diode laser assembly |
US7420996B2 (en) | 2005-11-22 | 2008-09-02 | Nlight Photonics Corporation | Modular diode laser assembly |
US7443895B2 (en) | 2005-11-22 | 2008-10-28 | Nlight Photonics Corporation | Modular diode laser assembly |
JP2008016715A (ja) * | 2006-07-07 | 2008-01-24 | Sanyo Electric Co Ltd | フレームパッケージ型半導体レーザ装置 |
JP2008016714A (ja) * | 2006-07-07 | 2008-01-24 | Sanyo Electric Co Ltd | フレームパッケージ型半導体レーザ装置 |
JP2008021754A (ja) * | 2006-07-12 | 2008-01-31 | Sanyo Electric Co Ltd | フレームパッケージ型半導体レーザ装置 |
GB0723893D0 (en) * | 2007-12-06 | 2008-01-16 | Univ Cardiff | Analysis device and analysis techniques |
JP2009141157A (ja) * | 2007-12-07 | 2009-06-25 | Panasonic Corp | 半導体装置、半導体装置の製造方法および光ピックアップ装置ならびに光ディスクドライブ装置 |
JP5391753B2 (ja) * | 2009-03-16 | 2014-01-15 | 株式会社リコー | 光源ユニット・光源装置・光走査装置および画像形成装置 |
JP2012033733A (ja) | 2010-07-30 | 2012-02-16 | Sanyo Electric Co Ltd | 半導体レーザ装置および光装置 |
JP2012094765A (ja) * | 2010-10-28 | 2012-05-17 | Sanyo Electric Co Ltd | 半導体レーザ装置および光装置 |
WO2013038921A1 (ja) * | 2011-09-14 | 2013-03-21 | 三洋電機株式会社 | 半導体レーザ装置および光装置 |
JP6304282B2 (ja) * | 2016-02-16 | 2018-04-04 | 日亜化学工業株式会社 | 半導体レーザ装置 |
CN109326959B (zh) * | 2017-08-01 | 2020-03-27 | 山东华光光电子股份有限公司 | 一种双波长半导体激光器芯片结构 |
JP6615238B2 (ja) | 2018-01-04 | 2019-12-04 | 株式会社フジクラ | 半導体レーザモジュール |
CN110071413A (zh) * | 2018-01-23 | 2019-07-30 | 广东安捷康光通科技有限公司 | 双波长14pin蝶形激光器及其制作方法 |
CN113410750B (zh) * | 2020-03-17 | 2022-07-12 | 潍坊华光光电子有限公司 | 一种双光束半导体激光器及制作方法 |
DE102021130369A1 (de) * | 2021-11-19 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0523563U (ja) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | 半導体レーザ装置 |
JP2500591B2 (ja) | 1993-04-15 | 1996-05-29 | 日本電気株式会社 | 半導体レ―ザ装置 |
JPH11186651A (ja) * | 1997-12-19 | 1999-07-09 | Sony Corp | 集積型半導体発光装置 |
JP3186684B2 (ja) | 1997-12-29 | 2001-07-11 | ソニー株式会社 | 半導体レーザ装置 |
WO2000016455A1 (fr) * | 1998-09-10 | 2000-03-23 | Rohm Co., Ltd. | Element lumineux semi-conducteur et laser a semi-conducteur |
JP2000244060A (ja) | 1998-12-22 | 2000-09-08 | Sony Corp | 半導体発光装置およびその製造方法 |
JP2000252592A (ja) | 1999-03-01 | 2000-09-14 | Hitachi Ltd | 光ディスク装置 |
JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
JP2002006181A (ja) | 2000-06-20 | 2002-01-09 | Matsushita Electric Ind Co Ltd | 集積化光モジュールおよびその製造方法 |
JP2002008258A (ja) * | 2000-06-21 | 2002-01-11 | Pioneer Electronic Corp | 光ピックアップ装置 |
JP3806586B2 (ja) | 2000-07-26 | 2006-08-09 | 三洋電機株式会社 | 半導体レーザ装置 |
JP3723426B2 (ja) * | 2000-07-28 | 2005-12-07 | 三洋電機株式会社 | 半導体レーザ装置 |
DE60129991T2 (de) * | 2000-07-17 | 2008-04-30 | Sanyo Electric Co., Ltd., Moriguchi | Halbleiterlaservorrichtung |
JP4599687B2 (ja) * | 2000-08-08 | 2010-12-15 | ソニー株式会社 | レーザダイオード、半導体発光装置および製造方法 |
JP2002232061A (ja) * | 2001-02-01 | 2002-08-16 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法および半導体レーザ装置 |
JP2002289956A (ja) | 2001-03-22 | 2002-10-04 | Kyocera Corp | 半導体レーザ装置 |
JP4617600B2 (ja) * | 2001-05-02 | 2011-01-26 | ソニー株式会社 | 2波長半導体レーザ装置 |
JP4150511B2 (ja) * | 2001-05-16 | 2008-09-17 | 株式会社日立製作所 | 半導体レ−ザ装置 |
JP3987716B2 (ja) * | 2001-12-10 | 2007-10-10 | シャープ株式会社 | 半導体レーザ装置およびその製造方法 |
JP3737769B2 (ja) | 2002-03-28 | 2006-01-25 | 株式会社東芝 | 半導体レーザ装置 |
-
2004
- 2004-10-12 US US10/575,680 patent/US7724798B2/en not_active Expired - Fee Related
- 2004-10-12 KR KR1020067006159A patent/KR100785203B1/ko not_active IP Right Cessation
- 2004-10-12 TW TW093130853A patent/TWI256757B/zh not_active IP Right Cessation
- 2004-10-12 JP JP2005514750A patent/JP4033883B2/ja not_active Expired - Fee Related
- 2004-10-12 CN CNB2004800301535A patent/CN100502177C/zh not_active Expired - Fee Related
- 2004-10-12 WO PCT/JP2004/015011 patent/WO2005039001A1/ja active Application Filing
-
2009
- 2009-02-27 US US12/395,084 patent/US8126026B2/en not_active Expired - Fee Related
- 2009-02-27 US US12/395,123 patent/US8290015B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20060058139A (ko) | 2006-05-29 |
CN100502177C (zh) | 2009-06-17 |
TWI256757B (en) | 2006-06-11 |
TW200515662A (en) | 2005-05-01 |
US20090161336A1 (en) | 2009-06-25 |
US8290015B2 (en) | 2012-10-16 |
JPWO2005039001A1 (ja) | 2007-11-22 |
US7724798B2 (en) | 2010-05-25 |
US20090161718A1 (en) | 2009-06-25 |
US20060285476A1 (en) | 2006-12-21 |
WO2005039001A1 (ja) | 2005-04-28 |
CN1868097A (zh) | 2006-11-22 |
US8126026B2 (en) | 2012-02-28 |
KR100785203B1 (ko) | 2007-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4033883B2 (ja) | 2ビーム半導体レーザ装置 | |
US8619825B2 (en) | Light-emitting device having a thermal conductive member with wiring function and method of manufacturing the same | |
US8275013B2 (en) | Semiconductor laser device and method of manufacturing the same | |
JP5521611B2 (ja) | 光装置および光機器 | |
JP5522977B2 (ja) | 多波長半導体レーザ装置 | |
JP2005317918A (ja) | 半導体レーザ装置および光装置 | |
JP3759081B2 (ja) | 半導体レーザ装置 | |
JP2005317896A (ja) | 半導体レーザ装置 | |
US8138663B2 (en) | Light emitting device and method of manufacturing the same | |
JP5227666B2 (ja) | 半導体レーザ装置およびその製造方法 | |
US8509278B2 (en) | Light emitting device and optical apparatus using the same | |
JP4917704B2 (ja) | 半導体レーザの製法 | |
JP5799727B2 (ja) | 多波長半導体レーザ装置及び多波長半導体レーザ装置の製造方法 | |
JP4535698B2 (ja) | 2波長半導体レーザ装置 | |
JP2000252592A (ja) | 光ディスク装置 | |
JP5216807B2 (ja) | 半導体レーザ装置 | |
JP2008053483A (ja) | 2波長半導体レーザ装置及びその製造方法 | |
JP2008016715A (ja) | フレームパッケージ型半導体レーザ装置 | |
JP2002232063A (ja) | 半導体レーザ装置及び光ピックアップ装置 | |
JP2011029677A5 (ja) | ||
JP2010183111A5 (ja) | ||
JP2002043676A (ja) | サブマウント及びその製造方法並びに半導体レーザ装置 | |
JP2008016714A (ja) | フレームパッケージ型半導体レーザ装置 | |
JP2010056185A (ja) | 半導体レーザ装置 | |
GB2477458A (en) | Multi-wavelength semiconductor laser device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070817 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070925 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071023 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111102 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111102 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121102 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121102 Year of fee payment: 5 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121102 Year of fee payment: 5 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131102 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |