JP4000247B2 - Photomask cleaning method - Google Patents

Photomask cleaning method Download PDF

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Publication number
JP4000247B2
JP4000247B2 JP2001119950A JP2001119950A JP4000247B2 JP 4000247 B2 JP4000247 B2 JP 4000247B2 JP 2001119950 A JP2001119950 A JP 2001119950A JP 2001119950 A JP2001119950 A JP 2001119950A JP 4000247 B2 JP4000247 B2 JP 4000247B2
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photomask
cleaning
gas
dissolved water
shielding film
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JP2002316107A (en
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耕志 丹下
美一 永村
邦博 細野
保貴 菊地
友紀 大政
光一 木戸
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Renesas Technology Corp
Toppan Inc
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Renesas Technology Corp
Toppan Inc
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Priority to JP2001119950A priority Critical patent/JP4000247B2/en
Priority to US10/119,009 priority patent/US7001470B2/en
Priority to DE10215759A priority patent/DE10215759A1/en
Priority to FR0204538A priority patent/FR2823685A1/en
Priority to KR10-2002-0020780A priority patent/KR100456760B1/en
Priority to TW091107842A priority patent/TW584890B/en
Publication of JP2002316107A publication Critical patent/JP2002316107A/en
Priority to US11/209,614 priority patent/US20050274392A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、フォトマスクの洗浄方法に係り、特に、ガラス基板の表面に遮光膜を備えるフォトマスクを洗浄するうえで好適な洗浄方法に関する。
【０００２】
【従来の技術】
従来、ガラス基板の表面に、Cr系或いはMoSi系の材料で形成された遮光膜を有するフォトマスクが知られている。図４は、上記構成を有するフォトマスクを洗浄するための第１の従来方法の一例のフローチャートである。
【０００３】
図４に示すように、フォトマスクを洗浄するための従来の方法では、先ず、フォトマスクの表面に付着している有機物を除去するために、硫酸または硫酸過水を用いた洗浄工程が行われる（Ｓ１００）。フォトマスクの有機物汚染度は、その表面に滴下された水などの濡れ性により評価することができる。すなわち、フォトマスク上に滴下された水などの濡れ性は、フォトマスクの有機汚染度が低いほど良好となる。このため、Ｓ１００の洗浄工程の目的は、図４中に示すように、フォトマスクの濡れ性を改善すること、と換言することができる。
【０００４】
次に、フォトマスク上に付着している硫酸または硫酸過水を洗い流すために、純水によるリンス工程が行われる（Ｓ１０２）。フォトマスクの清浄度を高めるためには、この工程において、十分なリンス（すすぎ）を行うことが必要である。
【０００５】
次に、フォトマスクに付着している異物を除去するために、アンモニアまたは過酸化水素水を用いた洗浄工程が行われる（Ｓ１０４）。尚、この工程では、アンモニアまたは過酸化水素水の代わりに、純水、または純水に洗剤を添加した洗浄液が用いられることもある。
【０００６】
硫酸または硫酸過水を用いた洗浄の場合と同様に、上記Ｓ１０４の後にも、純水によるリンス工程が行われる（Ｓ１０６）。フォトマスクの清浄度を十分に高めるためには、この段階でも十分なリンスを行うことが必要である。
【０００７】
上記Ｓ１０６でフォトマスクが十分にすすがれた後、フォトマスクを乾燥させるための乾燥工程が行われる（Ｓ１０８）。
【０００８】
図５は、Cr系やMoSi系の遮光膜を有するフォトマスクを洗浄するための第２の従来方法のフローチャートである。第２の従来方法では、第１の従来方法の場合と同様に、先ず、有機物の除去、或いは濡れ性の改善を目的とした洗浄工程、すなわち、硫酸または硫酸過水を洗浄液とする洗浄工程が実行される（Ｓ１１０）。
【０００９】
第２の従来方法では、次に、フォトマスク上の硫酸或いは異物を除去するために、アンモニアや、Ｈ２溶解水などのアルカリ性薬液を用いた洗浄工程が行われる（Ｓ１１２）。
【００１０】
上述した２つの洗浄工程の後、フォトマスクを乾燥させるための乾燥工程が実行される（Ｓ１１４）。
【００１１】
【発明が解決しようとする課題】
上述の如く、従来の洗浄方法では、Cr系或いはMoSi系の遮光膜を備えるフォトマスクが、先ず、硫酸または硫酸過水により洗浄される。このため、例えば第１の従来方法（図４）では、Ｓ１０２のリンス工程が不十分であると、フォトマスクの表面に硫酸イオンが残留し、フォトマスクの表面にくもりが生じ易いという問題が発生することがある。そして、第１の従来方法では、そのような問題を防ぐために、上記Ｓ１０２において、高温の純水を多量に使用する必要が生じていた。
【００１２】
また、第１または第２の従来方法では、特にMoSi系の遮光膜を有するハーフトーンフォトマスクが洗浄の対象で有る場合に、次のような問題が生じていた。すなわち、ハーフトーンフォトマスクにおいては、遮光膜の光学特性（透過率および位相角）が高い重要度を有している。このため、ハーフトーンフォトマスクを洗浄する場合には、その光学特性を変化させないことが重要である。しかしながら、近年では、マスクパターンの微細化が進むに連れて、硫酸や硫酸過水による洗浄（Ｓ１００やＳ１１０）に伴ってハーフトーンフォトマスクに生ずる光学特性の変化が無視できない状況になりつつある。
【００１３】
本発明は、上記のような課題を解決するためになされたもので、フォトマスクのくもりを容易に防止することができ、かつ、ハーフトーンフォトマスクの光学特性に実質的な影響を与えることのないフォトマスクの洗浄方法を提供することを目的とする。
【００１４】
【課題を解決するための手段】
請求項１記載の発明は、ガラス基板の表面に遮光膜を備えるフォトマスクを洗浄するための方法であって、
ガラス基板の表面にMoSi 系の遮光膜を有するハーフトーンフォトマスクを洗浄するための方法であって、
前記フォトマスクをＯ３ガス溶解水で洗浄する第１工程と、
前記フォトマスクの表面に付着している異物をアルカリ性の薬液にて洗浄し除去する第２工程と、
前記フォトマスクを乾燥させる第３工程と、
を含むことを特徴とするものである。
【００１６】
請求項２記載の発明は、請求項１に記載のフォトマスクの洗浄方法であって、前記Ｏ３ガス溶解水は、ｐｈ４〜５の酸性に調合されていることを特徴とするものである。
【００１７】
請求項３記載の発明は、請求項１または２に記載のフォトマスクの洗浄方法であって、前記Ｏ３ガス溶解水は、酸性の電解物質を含むことにより酸性に調合されていることを特徴とするものである。
【００１８】
請求項４記載の発明は、請求項１または２に記載のフォトマスクの洗浄方法であって、前記Ｏ３ガス溶解水は、酸性のガスを含むことにより酸性に調合されていることを特徴とするものである。
また、請求項５記載の発明は、請求項１乃至４の何れか１項に記載のフォトマスクの洗浄方法であって、前記Ｏ ３ ガス溶解水の液温度を室温〜８０℃としたことを特徴とするものである。
また、請求項６記載の発明は、請求項１乃至５の何れか１項に記載のフォトマスク洗浄方法であって、前記アルカリ性の薬液を、Ｈ ２ ガス溶解液、アンモニア水を添加したＨ ２ 溶解液、またはアルカリイオン水としたことを特徴とする。
【００１９】
請求項７記載の発明は、請求項１乃至６の何れか１項記載のフォトマスクの洗浄方法であって、前記第１工程および前記第２工程の少なくとも一方で超音波処理が行われることを特徴とするものである。
【００２０】
【発明の実施の形態】
以下、図面を参照してこの発明の実施の形態について説明する。尚、各図において共通する要素には、同一の符号を付して重複する説明を省略する。
【００２１】
実施の形態１．
図１は、本発明の実施の形態１であるフォトマスクの洗浄方法を説明するためのフローチャートを示す。本実施形態の洗浄方法は、ガラス基板の表面に、Cr系またはMoSi系の遮光膜を備えるフォトマスクを洗浄するための方法である。
【００２２】
図１に示すように、本実施形態の洗浄方法では、先ず、Ｏ３ガス溶解水を用いてフォトマスクを洗浄する工程が実行される（Ｓ１２０）。この洗浄工程は、フォトマスクの表面に付着している有機物の除去を目的として、すなわち、フォトマスク表面の濡れ性改善を目的として行われる。
【００２３】
次に、アルカリ性の薬液を用いて、より具体的には、Ｈ２ガス溶解水、微量のアンモニアを添加したＨ２溶解水、或いはアルカリイオン水などを用いてフォトマスクを洗浄する工程が実行される（Ｓ１２２）。この洗浄工程は、フォトマスクの表面に付着している異物の除去を目的として行われる。
【００２４】
最後に、上記Ｓ１２０およびＳ１２２の処理により洗浄されたフォトマスクを乾燥させるための工程が実行される（Ｓ１２４）。これらの工程が実行されることにより、Cr系やMoSi系の遮光膜を有するフォトマスクの表面を、清浄に洗浄することができる。
【００２５】
ところで、上述した実施の形態１の方法では、Ｓ１２０において、Ｏ３ガス溶解液を用いてフォトマスクの洗浄を行っているが、本発明はこれに限定されるものではない。すなわち、Ｓ１２０では、Ｏ３ガス溶解液に代えて、炭酸ガスを溶解することにより酸性に調合されたＯ３ガス溶解液、或いは、硫酸を微量に添加することで酸性に調合されたＯ３ガス溶解液を用いてフォトマスクを洗浄することとしてもよい。
【００２６】
また、上述した実施の形態１の方法では、常温のＯ３ガス溶解液でフォトマスクを洗浄することとしているが、本発明はこれに限定されるものではない。すなわち、Ｏ３ガス溶解液、或いは、これに代えて用いられる酸性のＯ３ガス溶解液は、室温より高い温度（室温〜８０℃程度）に、より好ましくは４０℃程度に加熱されていてもよい。
【００２７】
次に、図２および図３を参照して、本実施形態の洗浄方法により得られる効果について説明する。
図２は、本実施形態の洗浄方法を含む複数の洗浄方法につき、洗浄前後のフォトマスクの清浄度を対比して表した図を示す。図２において、縦軸は、フォトマスクの表面に滴下された純水滴の接触角を示す。フォトマスク上に滴下された純水は、フォトマスクの有機汚染度が低いほど良好な濡れ性を示す。従って、その接触角は、フォトマスクの有機汚染度が低いほど小さな値となる。
【００２８】
以下、図２に示す結果を得るために行った実験の方法について説明する。この測定実験では、先ず、Crの遮光膜を有する清浄なフォトマスクの上、すなわち、Cr層の上に、HMDS（ヘキサメチルジシラザン）を均一に塗布することでテストピースが作成される。HMDSは、フォトマスクの表面を有機物により標準的に汚染するための評価用薬液である。
【００２９】
個々のテストピースには、洗浄工程に付される前に、純水が滴下される。そして、滴下された純水の接触角が、洗浄前の接触角として測定される。洗浄前の接触角が測定された後、個々のテストピースは、所定の洗浄方法で洗浄される。その後、再びテストピースの上に純水が滴下され、洗浄後の接触角が測定される。
【００３０】
図２において、符号Ａを付して表す２つの結果は、上述したテストピース（標準的に汚染されたフォトマスク）が硫酸過水で洗浄される前後の接触角を示す。符号Ｂを付して表す２つの結果は、テストピースがＯ３ガス溶解水で洗浄される前後の接触角を示す。また、符号Ｃを付して表す２つの結果は、テストピースが、４０℃に加熱された高温のＯ３ガス溶解液で洗浄される前後の接触角を示す。更に、符号Ｄを付して表す２つの結果は、テストピースが、酸性に調合されたＯ３ガス溶解液で洗浄される前後の接触角を示す。
【００３１】
尚、符号Ｄに対応するＯ３ガス溶解水は、バブリングによって炭酸ガスを溶解させることにより、そのphが４〜５になるように調合された溶液である。但し、図２には表示を省略しているが、硫酸を僅かに添加することによりph４〜５に調合したＯ３ガス溶解水を洗浄液として用いる場合にも、符号Ｄを付して示す結果と同等の結果を得ることができる。
【００３２】
図２に示す結果より明らかなように、Ｏ３ガス溶解水を用いた洗浄によれば、硫酸過水を用いた洗浄と同等の接触角を得ることができる。より具体的には、Ｏ３ガス溶解水を用いた洗浄によれば、洗浄液として硫酸過水が用いられる場合と同等に、フォトマスクの濡れ性を改善すること、すなわち、フォトマスク上の有機物を除去することができる。
【００３３】
また、その洗浄能力は、Ｏ３ガス溶解水が室温より高い温度（室温〜８０℃程度）に加熱された場合、およびＯ３ガス溶解水が弱酸性に調合された場合にも、ほぼ同様に確保される。更に、それらの溶解水による優れた洗浄能力は、洗浄の対象が、MoSi系の遮光膜を有するハーフトーンフォトマスクである場合にも同様に得られる。
【００３４】
このように、本実施形態の洗浄方法において用いられる洗浄液、すなわち、Ｏ３ガス溶解水、酸性のＯ３ガス溶解水、および加熱されたＯ３ガス溶解水は、Cr系またはMoSi系の遮光膜を有するフォトマスクの洗浄液として、何れも十分な有機物除去能力、すなわち、十分な濡れ性改善能力を有している。このため、本実施形態の洗浄方法によれば、硫酸または硫酸過水を用いることなく、それらが用いられる場合と同等の清浄度を確保することができる。つまり、本実施形態の洗浄方法によれば、硫酸や硫酸過水などの薬液の使用量を削減し、また、フォトマスクの表面に硫酸イオンが残留するのを防止し、更に、従来の洗浄方法（図４参照）では多量に使用されていたリンス液（純水）の使用量を大幅に削減することができる。
【００３５】
図３は、ハーフトーンフォトマスクが洗浄されることにより、そのマスクが有するMoSi系の遮光膜に生ずる光学特性の変化を、本実施形態の洗浄方法を含む複数の洗浄方法のそれぞれについて対比して表した図を示す。図３において、縦軸は、MoSi系遮光膜の透過率変化量（％）（図中、左側に表示）と、MoSi系遮光膜の位相角変化量（deg）（図中、右側に表示）とを示す。また、図３において横軸は、洗浄の繰り返し回数を示す。
【００３６】
以下、図３に示す結果を得るために行った実験の方法について説明する。この測定実験では、先ず、MoSi系の遮光膜を有するハーフトーンフォトマスクをテストピースとして準備する。このテストピースを、硫酸過水、Ｏ３ガス溶解水、および酸性に調合されたＯ３ガス溶解水（炭酸ガスのバブリングによって、ph４〜５とされたもの）の何れかで繰り返し洗浄する。そして、個々の洗浄の前後でMoSi系遮光膜に生ずる透過率変化量と、位相角変化量とを測定する。
【００３７】
図３において、□で示す結果は、硫酸過水を用いた洗浄が行われることにより遮光膜に生じた透過率の変化量を示す。この結果が示すように、洗浄液として硫酸過水が用いられる場合、MoSi系遮光膜の透過率は比較的大きく変化する。
【００３８】
図３において、△で示す結果、および▲で示す結果は、それぞれ、Ｏ３ガス溶解水を用いた洗浄が行われることにより遮光膜に生じた透過率および位相角の変化量を示す。この結果が示すように、洗浄液としてＯ３ガス溶解水が用いられる場合、MoSi系遮光膜の透過率は繰り返し洗浄が行われてもほとんど変化しない。
【００３９】
また、図３において、○で示す結果、および●で示す結果は、それぞれ、酸性に調合されたＯ３ガス溶解水を用いた洗浄が行われることにより遮光膜に生じた透過率および位相角の変化量を示す。この結果が示すように、酸性のＯ３ガス溶解水が用いられた場合にも、MoSi系遮光膜の透過率は、繰り返し洗浄が行われても大きく変化することはない。
【００４０】
尚、○または●で示す結果に対応するＯ３ガス溶解水は、バブリングによって炭酸ガスを溶解させることにより、そのphが４〜５になるように調合された溶液である。但し、図３には表示を省略しているが、硫酸を僅かに添加することによりph４〜５に調合したＯ３ガス溶解水を洗浄液として用いる場合にも、符号Ｄを付して示す結果と同等の結果を得ることができる。また、図３には表示を省略しているが、室温より高い温度（室温〜８０℃程度）に加熱されたＯ３ガスが洗浄液として用いられる場合にも、MoSi系遮光膜の光学特性（透過率、位相角）に大きな変化が生ずることはない。
【００４１】
このように、本実施形態の洗浄方法において用いられる洗浄液、すなわち、Ｏ３ガス溶解水、酸性のＯ３ガス溶解水、および加熱されたＯ３ガス溶解水は、MoSi系遮光膜の光学特性を安定に維持するうえで、硫酸系の溶液に比して優れている。このため、本実施形態の洗浄方法によれば、従来の洗浄方法において問題となっていた遮光膜の光学特性変化を引き起こすことなく、ハーフトーンフォトマスクを清浄に洗浄することができる。
【００４２】
ところで、上述した実施の形態１では、Ｏ３ガス溶解水を酸性にするために、バブリングによって炭酸ガスを溶解させる手法が用いられているが、Ｏ３ガス熔解水を酸性にするためにその中に熔解させるガスは炭酸ガスに限定されるものではない。すなわち、Ｏ３ガス溶解水に溶解させるガスは、その熔解水を酸性にできるものであれば、他のガスであってもよい。
【００４３】
また、上述した実施の形態１では、Ｏ３ガス溶解水を酸性にするために、硫酸を微量に添加する手法が用いられているが、Ｏ３ガス熔解水を酸性にするための手法はこれに限定されるものではない。すなわち、Ｏ３ガス溶解水は、硫酸の他、塩酸などの電解物質を添加することにより酸性に調合してもよい。
【００４４】
また、上述した実施の形態１では、Ｓ１２０やＳ１２２の洗浄工程を、どのように行うかは特に言及していないが、それらの洗浄工程は、Ｏ３ガス溶解水やアルカリ性の薬液などが導入されたオーバーフロー槽にフォトマスクを浸漬させることにより実現することができる。更に、オーバーフロー槽の内部で、洗浄液を介して、フォトマスクに超音波を印加することによれば、より高い洗浄効果を得ることができる。
【００４５】
【発明の効果】
この発明は以上説明したように構成されているので、以下に示すような効果を奏する。
請求項１記載の発明によれば、フォトマスクの遮光膜に付着した有機物を、硫酸系の薬液を用いることなく除去することができる。このため、本発明によれば、フォトマスクの表面に硫酸イオンが残留するのを確実に防止し、また、フォトマスクのリンスに要する純水の使用を削減することができる。また、この発明によれば、 MoSi 系の遮光膜を有するハーフトーンフォトマスクに付着した有機物を、ハーフトーンマスクの光学特性を変化させることなく除去することができる。
【００４７】
請求項２乃至４の何れか１項に記載の発明によれば、酸性に調合されたＯ３ガス溶解水を用いて、フォトマスクを清浄に洗浄することができる。
【００４８】
請求項７に記載の発明によれば、Ｏ３ガス溶解水を用いた洗浄工程（第１工程）、および異物の除去を目的とした洗浄工程（第２工程）の少なくとも一方において超音波洗浄が組み合わされるため、高い洗浄効果を得ることができる。
【図面の簡単な説明】
【図１】 本発明の実施の形態１のフォトマスクの洗浄方法の流れを説明するためのフローチャートである。
【図２】 フォトマスク上に滴下された純水滴の接触角と洗浄方法との関係を表す測定結果である。
【図３】 MoSi系の遮光膜を有するハーフトーンフォトマスクの光学特性と洗浄方法との関係を表す測定結果である。
【図４】 フォトマスクを洗浄するための第１の従来方法のフローチャートである。
【図５】 フォトマスクを洗浄するための第２の従来方法のフローチャートである。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a photomask cleaning method, and more particularly to a cleaning method suitable for cleaning a photomask having a light shielding film on the surface of a glass substrate.
[0002]
[Prior art]
Conventionally, a photomask having a light-shielding film formed of a Cr-based or MoSi-based material on the surface of a glass substrate is known. FIG. 4 is a flowchart of an example of a first conventional method for cleaning a photomask having the above configuration.
[0003]
As shown in FIG. 4, in the conventional method for cleaning a photomask, first, a cleaning process using sulfuric acid or sulfuric acid / hydrogen peroxide is performed to remove organic substances adhering to the surface of the photomask. (S100). The degree of organic contamination of a photomask can be evaluated by wettability of water or the like dripped onto the surface. That is, the wettability of water or the like dripped on the photomask becomes better as the organic contamination degree of the photomask is lower. For this reason, the purpose of the cleaning step of S100 can be rephrased as improving the wettability of the photomask as shown in FIG.
[0004]
Next, a rinsing process with pure water is performed in order to wash away sulfuric acid or sulfuric acid / hydrogen peroxide adhering to the photomask (S102). In order to increase the cleanliness of the photomask, it is necessary to perform sufficient rinsing (rinsing) in this step.
[0005]
Next, in order to remove the foreign matter adhering to the photomask, a cleaning process using ammonia or hydrogen peroxide is performed (S104). In this step, instead of ammonia or hydrogen peroxide solution, pure water or a cleaning liquid obtained by adding a detergent to pure water may be used.
[0006]
As in the case of cleaning using sulfuric acid or sulfuric acid / hydrogen peroxide, a rinsing step with pure water is also performed after S104 (S106). In order to sufficiently improve the cleanliness of the photomask, it is necessary to perform sufficient rinsing even at this stage.
[0007]
After the photomask is sufficiently rinsed in S106, a drying process for drying the photomask is performed (S108).
[0008]
FIG. 5 is a flowchart of a second conventional method for cleaning a photomask having a Cr-based or MoSi-based light-shielding film. In the second conventional method, as in the case of the first conventional method, first, there is a cleaning process for the purpose of removing organic substances or improving wettability, that is, a cleaning process using sulfuric acid or sulfuric acid / hydrogen peroxide as a cleaning liquid. It is executed (S110).
[0009]
In the second conventional method, next, a cleaning process using an alkaline chemical solution such as ammonia or H2 dissolved water is performed to remove sulfuric acid or foreign matters on the photomask (S112).
[0010]
After the two cleaning steps described above, a drying step for drying the photomask is performed (S114).
[0011]
[Problems to be solved by the invention]
As described above, in the conventional cleaning method, a photomask provided with a Cr-based or MoSi-based light-shielding film is first cleaned with sulfuric acid or sulfuric acid-hydrogen peroxide. For this reason, for example, in the first conventional method (FIG. 4), if the rinsing process of S102 is insufficient, sulfate ions remain on the surface of the photomask, and the problem arises that cloudiness is likely to occur on the surface of the photomask. There are things to do. In the first conventional method, in order to prevent such a problem, it has been necessary to use a large amount of high-temperature pure water in S102.
[0012]
Further, in the first or second conventional method, the following problem has arisen particularly when a halftone photomask having a MoSi-based light-shielding film is an object to be cleaned. That is, in the halftone photomask, the optical characteristics (transmittance and phase angle) of the light shielding film are highly important. For this reason, when cleaning a halftone photomask, it is important not to change its optical characteristics. However, in recent years, as the mask pattern becomes finer, changes in optical characteristics that occur in the halftone photomask due to cleaning with sulfuric acid or sulfuric acid / hydrogen peroxide (S100 and S110) are becoming ignorable.
[0013]
The present invention has been made to solve the above-described problems, and can easily prevent clouding of the photomask and substantially affect the optical characteristics of the halftone photomask. It is an object to provide a method for cleaning a non-photomask.
[0014]
[Means for Solving the Problems]
The invention according to claim 1 is a method for cleaning a photomask having a light shielding film on the surface of a glass substrate,
A method for cleaning a halftone photomask to the surface of the glass substrate having a light shielding film of MoSi-based,
A first step of cleaning the photomask with O 3 gas-dissolved water;
A second step of cleaning and removing foreign matter adhering to the surface of the photomask with an alkaline chemical ;
A third step of drying the photomask;
It is characterized by including.
[0016]
According to a second aspect of the invention, a method for cleaning a photo mask according to claim 1, wherein the O 3 gas dissolved water is characterized in that it is formulated acidified to pH 4-5.
[0017]
A third aspect of the present invention is the photomask cleaning method according to the first or second aspect , wherein the O 3 gas-dissolved water is prepared acidic by containing an acidic electrolytic substance. It is what.
[0018]
A fourth aspect of the present invention is the photomask cleaning method according to the first or second aspect , wherein the O 3 gas-dissolved water is acidified by containing an acidic gas. To do.
The invention according to claim 5 is the photomask cleaning method according to any one of claims 1 to 4, wherein the liquid temperature of the O 3 gas-dissolved water is set to room temperature to 80 ° C. It is a feature.
The invention of claim 6, wherein, there is provided a photomask cleaning method according to any one of claims 1 to 5, the alkaline chemical liquid, H 2 gas solution, H 2 with the addition of aqueous ammonia It is characterized by using a solution or alkaline ionized water.
[0019]
A seventh aspect of the present invention is the photomask cleaning method according to any one of the first to sixth aspects, wherein ultrasonic treatment is performed in at least one of the first step and the second step. It is a feature.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. In addition, the same code | symbol is attached | subjected to the element which is common in each figure, and the overlapping description is abbreviate | omitted.
[0021]
Embodiment 1 FIG.
FIG. 1 is a flowchart for explaining a photomask cleaning method according to the first embodiment of the present invention. The cleaning method of this embodiment is a method for cleaning a photomask having a Cr-based or MoSi-based light-shielding film on the surface of a glass substrate.
[0022]
As shown in FIG. 1, in the cleaning method of this embodiment, first, a step of cleaning the photomask using O 3 gas-dissolved water is performed (S120). This cleaning step is performed for the purpose of removing organic substances adhering to the surface of the photomask, that is, for improving the wettability of the photomask surface.
[0023]
Next, using an alkaline chemical liquid, and more specifically, H 2 gas dissolved water, H 2 dissolved water with the addition of ammonia traces, or washing the photomask by using an alkaline ionized water is performed (S122). This cleaning process is performed for the purpose of removing foreign substances adhering to the surface of the photomask.
[0024]
Finally, a process for drying the photomask cleaned by the processes of S120 and S122 is executed (S124). By performing these steps, the surface of the photomask having a Cr-based or MoSi-based light-shielding film can be cleaned cleanly.
[0025]
By the way, in the method of the first embodiment described above, the photomask is cleaned using the O 3 gas solution in S120, but the present invention is not limited to this. That is, in S120, instead of the O 3 gas solution, O 3 gas solution that is formulated acidified by dissolving carbon dioxide gas, or, O 3 gas, which is formulated acidified by adding sulfuric acid in a trace amount It is good also as washing | cleaning a photomask using a solution.
[0026]
In the method of the first embodiment described above, the photomask is washed with a room temperature O 3 gas solution, but the present invention is not limited to this. That is, the O 3 gas solution or the acidic O 3 gas solution used in place of it is heated to a temperature higher than room temperature (room temperature to about 80 ° C.), more preferably about 40 ° C. Good.
[0027]
Next, with reference to FIG. 2 and FIG. 3, the effect obtained by the cleaning method of this embodiment will be described.
FIG. 2 is a diagram showing the degree of cleanliness of the photomask before and after cleaning for a plurality of cleaning methods including the cleaning method of the present embodiment. In FIG. 2, the vertical axis indicates the contact angle of pure water droplets dropped on the surface of the photomask. The pure water dropped on the photomask exhibits better wettability as the organic contamination of the photomask is lower. Therefore, the contact angle becomes smaller as the organic contamination degree of the photomask is lower.
[0028]
Hereinafter, a method of an experiment performed to obtain the result shown in FIG. 2 will be described. In this measurement experiment, first, a test piece is created by uniformly applying HMDS (hexamethyldisilazane) on a clean photomask having a Cr light-shielding film, that is, on a Cr layer. HMDS is a chemical solution for evaluation for standard contamination of the photomask surface with organic substances.
[0029]
Each test piece is dripped with pure water before being subjected to a cleaning process. And the contact angle of the dripped pure water is measured as the contact angle before cleaning. After the contact angle before cleaning is measured, the individual test pieces are cleaned by a predetermined cleaning method. Thereafter, pure water is dropped again on the test piece, and the contact angle after cleaning is measured.
[0030]
In FIG. 2, the two results represented by the symbol A indicate the contact angles before and after the above-described test piece (a standardly contaminated photomask) is cleaned with sulfuric acid / hydrogen peroxide. The two results represented by the symbol B indicate the contact angles before and after the test piece is cleaned with O 3 gas dissolved water. Also, the two results represented by the symbol C indicate the contact angles before and after the test piece is cleaned with a high-temperature O 3 gas solution heated to 40 ° C. Furthermore, the two results represented by the symbol D show the contact angle before and after the test piece is cleaned with an acid-prepared O 3 gas solution.
[0031]
Note that the O 3 gas-dissolved water corresponding to the symbol D is a solution prepared so as to have a ph of 4 to 5 by dissolving carbon dioxide by bubbling. However, although not shown in FIG. 2, the results shown with the symbol D are also used when the O 3 gas-dissolved water prepared to pH 4 to 5 by adding a slight amount of sulfuric acid is used as the cleaning liquid. Equivalent results can be obtained.
[0032]
As is apparent from the results shown in FIG. 2, according to the cleaning using the O 3 gas-dissolved water, it is possible to obtain a contact angle equivalent to the cleaning using sulfuric acid / hydrogen peroxide. More specifically, according to the cleaning using the O 3 gas-dissolved water, the wettability of the photomask is improved as in the case where sulfuric acid / hydrogen peroxide is used as the cleaning liquid. Can be removed.
[0033]
Moreover, its cleaning ability, when the O 3 gas dissolved water is heated to a temperature above room temperature (about room temperature to 80 ° C.), and O 3 even if the gas dissolved water is formulated in a weakly acidic, substantially similar to Secured. Further, the excellent cleaning ability with the dissolved water can be obtained similarly when the object to be cleaned is a halftone photomask having a MoSi light-shielding film.
[0034]
Thus, the cleaning liquid used in the cleaning method of the present embodiment, that is, the O 3 gas-dissolved water, the acidic O 3 gas-dissolved water, and the heated O 3 gas-dissolved water is a Cr-based or MoSi-based light-shielding film. Each of the photomask cleaning liquids has sufficient organic substance removing ability, that is, sufficient wettability improving ability. For this reason, according to the cleaning method of the present embodiment, it is possible to ensure the cleanliness equivalent to the case where they are used without using sulfuric acid or sulfuric acid / hydrogen peroxide. That is, according to the cleaning method of the present embodiment, the amount of chemical solution such as sulfuric acid and sulfuric acid / hydrogen peroxide is reduced, and sulfate ions are prevented from remaining on the surface of the photomask. In the case of (see FIG. 4), the amount of rinse liquid (pure water) used in a large amount can be greatly reduced.
[0035]
FIG. 3 shows a comparison of the change in the optical characteristics that occur in the MoSi-based light-shielding film of the halftone photomask with respect to each of a plurality of cleaning methods including the cleaning method of the present embodiment. A diagram is shown. In FIG. 3, the vertical axis represents the transmittance change amount (%) of the MoSi-based light-shielding film (displayed on the left side in the figure) and the phase angle change amount (deg) of the MoSi-based light-shielding film (displayed on the right side in the figure). It shows. In FIG. 3, the horizontal axis indicates the number of cleaning repetitions.
[0036]
Hereinafter, a method of an experiment performed to obtain the result shown in FIG. 3 will be described. In this measurement experiment, first, a halftone photomask having a MoSi-based light-shielding film is prepared as a test piece. This test piece is repeatedly washed with any of sulfuric acid / hydrogen peroxide, O 3 gas-dissolved water, and acid-prepared O 3 gas-dissolved water (made to have a pH of 4 to 5 by bubbling carbon dioxide). Then, the transmittance change amount and the phase angle change amount generated in the MoSi light-shielding film before and after each cleaning are measured.
[0037]
In FIG. 3, the result indicated by □ indicates the amount of change in transmittance generated in the light-shielding film due to the cleaning using sulfuric acid / hydrogen peroxide. As shown by this result, when sulfuric acid / hydrogen peroxide is used as the cleaning liquid, the transmittance of the MoSi light-shielding film changes relatively greatly.
[0038]
In FIG. 3, the results indicated by Δ and the results indicated by ▲ indicate the amount of change in transmittance and phase angle generated in the light-shielding film as a result of cleaning using O 3 gas-dissolved water, respectively. As this result shows, when O 3 gas-dissolved water is used as the cleaning liquid, the transmittance of the MoSi light-shielding film hardly changes even when repeated cleaning is performed.
[0039]
Further, in FIG. 3, the results indicated by ◯ and the results indicated by ● are respectively the transmittance and phase angle generated in the light-shielding film by the cleaning using the acid-prepared O 3 gas dissolved water. Indicates the amount of change. As shown in this result, even when acidic O 3 gas-dissolved water is used, the transmittance of the MoSi light-shielding film does not change greatly even when repeated cleaning is performed.
[0040]
Incidentally, the O 3 gas-dissolved water corresponding to the results indicated by “◯” or “●” is a solution prepared so that its ph becomes 4 to 5 by dissolving carbon dioxide gas by bubbling. However, although the display is omitted in FIG. 3, even when O 3 gas-dissolved water prepared to pH 4 to 5 by adding a slight amount of sulfuric acid is used as a cleaning liquid, the result indicated by reference sign D is shown. Equivalent results can be obtained. Although not shown in FIG. 3, even when O 3 gas heated to a temperature higher than room temperature (room temperature to about 80 ° C.) is used as a cleaning liquid, the optical characteristics (transmission characteristics) of the MoSi light-shielding film are also shown. The rate and phase angle) do not change significantly.
[0041]
As described above, the cleaning liquid used in the cleaning method of the present embodiment, that is, the O 3 gas-dissolved water, the acidic O 3 gas-dissolved water, and the heated O 3 gas-dissolved water have the optical characteristics of the MoSi-based light-shielding film. It is superior to sulfuric acid-based solutions in maintaining stability. For this reason, according to the cleaning method of this embodiment, the halftone photomask can be cleaned cleanly without causing a change in the optical characteristics of the light shielding film, which has been a problem in the conventional cleaning method.
[0042]
Incidentally, in the first embodiment described above, the O 3 gas dissolved water to acidic, although techniques for dissolving carbon dioxide gas by bubbling is employed, therein the O 3 gas melted water to acidified The gas to be dissolved in is not limited to carbon dioxide. That is, the gas dissolved in the O 3 gas-dissolved water may be another gas as long as the dissolved water can be acidified.
[0043]
In the first embodiment described above, the O 3 gas dissolved water for acidic, have been used a technique of adding sulfuric acid to the small amount, method for the O 3 gas melting water acidified This It is not limited to. That is, the O 3 gas-dissolved water may be acidified by adding an electrolytic substance such as hydrochloric acid in addition to sulfuric acid.
[0044]
Moreover, in Embodiment 1 mentioned above, although it does not mention in particular how the cleaning process of S120 or S122 is performed, in these cleaning processes, O 3 gas-dissolved water, an alkaline chemical solution, or the like is introduced. This can be realized by immersing the photomask in the overflow tank. Furthermore, a higher cleaning effect can be obtained by applying ultrasonic waves to the photomask through the cleaning liquid inside the overflow tank.
[0045]
【The invention's effect】
Since the present invention is configured as described above, the following effects can be obtained.
According to the first aspect of the present invention, organic substances adhering to the light-shielding film of the photomask can be removed without using a sulfuric acid-based chemical solution. For this reason, according to the present invention, it is possible to reliably prevent sulfate ions from remaining on the surface of the photomask, and to reduce the use of pure water required for rinsing the photomask. In addition, according to the present invention, organic substances attached to a halftone photomask having a MoSi- based light-shielding film can be removed without changing the optical characteristics of the halftone mask.
[0047]
According to the invention described in any one of claims 2 to 4, with the O 3 gas dissolved water, which is formulated in the acidic, can be cleaned photomask clean.
[0048]
According to the invention described in claim 7, ultrasonic cleaning is combined in at least one of a cleaning process using O3 gas-dissolved water (first process) and a cleaning process for removing foreign substances (second process). Therefore, a high cleaning effect can be obtained.
[Brief description of the drawings]
FIG. 1 is a flowchart for explaining a flow of a photomask cleaning method according to a first embodiment of the present invention;
FIG. 2 is a measurement result showing a relationship between a contact angle of a pure water droplet dropped on a photomask and a cleaning method.
FIG. 3 is a measurement result showing a relationship between an optical characteristic of a halftone photomask having a MoSi-based light-shielding film and a cleaning method.
FIG. 4 is a flowchart of a first conventional method for cleaning a photomask.
FIG. 5 is a flowchart of a second conventional method for cleaning a photomask.

Claims (7)

ガラス基板の表面にMoSi 系の遮光膜を有するハーフトーンフォトマスクを洗浄するための方法であって、
前記フォトマスクをＯ３ガス溶解水で洗浄する第１工程と、
前記フォトマスクの表面に付着している異物をアルカリ性の薬液にて洗浄し除去する第２工程と、
前記フォトマスクを乾燥させる第３工程と、
を含むことを特徴とするフォトマスクの洗浄方法。A method for cleaning a halftone photomask to the surface of the glass substrate having a light shielding film of MoSi-based,
A first step of cleaning the photomask with O 3 gas-dissolved water;
A second step of cleaning and removing foreign matter adhering to the surface of the photomask with an alkaline chemical ;
A third step of drying the photomask;
A method for cleaning a photomask, comprising: 前記Ｏ３ガス溶解水は、ｐｈ４〜５の酸性に調合されていることを特徴とする請求項１に記載のフォトマスクの洗浄方法。The photomask cleaning method according to claim 1, wherein the O 3 gas-dissolved water is prepared to have an acidity of ph 4 to 5 . 前記Ｏ３ガス溶解水は、酸性の電解物質を含むことにより酸性に調合されていることを特徴とする請求項１または２に記載のフォトマスクの洗浄方法。The O 3 gas dissolved water, the photo mask cleaning method according to claim 1 or 2, characterized in that it is formulated in the acidic by including acidic electrolytes. 前記Ｏ３ガス溶解水は、酸性のガスを含むことにより酸性に調合されていることを特徴とする請求項１または２に記載のフォトマスクの洗浄方法。The O 3 gas dissolved water, the photo mask cleaning method according to claim 1 or 2, characterized in that it is formulated in the acidic by including acidic gases. 前記ＯO ３3 ガス溶解水の液温度を室温〜８０℃としたことを特徴とする請求項１乃至４の何れか１項に記載のフォトマスクの洗浄方法。The method for cleaning a photomask according to any one of claims 1 to 4, wherein the temperature of the gas-dissolved water is from room temperature to 80 ° C. 前記アルカリ性の薬液を、ＨThe alkaline chemical solution is H ２2 ガス溶解液、アンモニア水を添加したＨH with gas solution and ammonia water added ２2 溶解液、またはアルカリイオン水としたことを特徴とする請求項１乃至５の何れか１項に記載のフォトマスク洗浄方法。6. The photomask cleaning method according to claim 1, wherein the photomask cleaning solution is a solution or alkaline ionized water. 前記第１工程および前記第２工程の少なくとも一方で超音波処理が行われることを特徴とする請求項１乃至５の何れか１項記載のフォトマスクの洗浄方法。  6. The photomask cleaning method according to claim 1, wherein ultrasonic treatment is performed in at least one of the first step and the second step. 7.
JP2001119950A 2001-04-18 2001-04-18 Photomask cleaning method Expired - Lifetime JP4000247B2 (en)

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US10/119,009 US7001470B2 (en) 2001-04-18 2002-04-10 Cleaning process for photomasks
DE10215759A DE10215759A1 (en) 2001-04-18 2002-04-10 Cleaning process for a photomask
FR0204538A FR2823685A1 (en) 2001-04-18 2002-04-11 Photomask cleaning process involves drying photomask after contamination adhered on its surface is eliminated by using oxide gas solved water
KR10-2002-0020780A KR100456760B1 (en) 2001-04-18 2002-04-17 Cleaning Process for Photomasks
TW091107842A TW584890B (en) 2001-04-18 2002-04-17 Cleaning process for photomasks
US11/209,614 US20050274392A1 (en) 2001-04-18 2005-08-24 Cleaning process for photomasks

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