JPH0212204A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH0212204A JPH0212204A JP63162964A JP16296488A JPH0212204A JP H0212204 A JPH0212204 A JP H0212204A JP 63162964 A JP63162964 A JP 63162964A JP 16296488 A JP16296488 A JP 16296488A JP H0212204 A JPH0212204 A JP H0212204A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- transparent conductive
- plating
- conductive film
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 37
- 238000007747 plating Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000011282 treatment Methods 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 4
- 238000004299 exfoliation Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 51
- 229910052759 nickel Inorganic materials 0.000 description 26
- 239000000243 solution Substances 0.000 description 13
- 239000003054 catalyst Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nickel lidate Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Optical Filters (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はパターン形成方法に係り、更に詳しくは絶縁性
基板上に設けられた透明導電性物質の被膜やパターンの
所望部分にメッキ法によりメッキ鳴からなるパターンを
形成する方法に（資）するものである。本発明のパター
ン形成方法は、例えば高分子電着法により得られるカラ
ーフィルターのリードパターンやビクセルパターン等に
ニッケルメッキ層からなるパターンを形成する際に好適
に用いられる。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a pattern forming method, and more specifically, plating a desired portion of a transparent conductive material coating or pattern provided on an insulating substrate by a plating method. It contributes to the method of forming patterns consisting of sounds. The pattern forming method of the present invention is suitably used, for example, when forming a pattern made of a nickel plating layer on a lead pattern or a pixel pattern of a color filter obtained by polymer electrodeposition.
［従来の挟術］
カラーフィルター等に用いられる表面着色体は、例えば
青、緑、赤の３色の着色層が規則的に配列された、透明
導電性物質からなる３群のビクセルパターンと、各群の
ビクセルパターンの各パターン間を電気的に導通させる
、これも透明導電性物質からなるリードパターンとを透
明絶縁基板上に有し、このリードパターン上には、その
電気的導通性を向上させ、かつ遮光性をもたせるために
ニッケルメッキ層がしばしば形成される。[Conventional Pinching Technique] A surface colored body used in a color filter or the like has a three-group pixel pattern made of a transparent conductive material, in which colored layers of three colors of blue, green, and red are regularly arranged, and A lead pattern made of a transparent conductive material is provided on a transparent insulating substrate to provide electrical continuity between each pixel pattern in each group. A nickel plating layer is often formed to provide light shielding and light shielding properties.
上記の表面着色体の場合のように、透明導電性膜パター
ン上に微細な部分メッキを施すことは従来より行なわれ
ており、このため以下のような方法が採用されていた。As in the case of the above-mentioned surface-colored body, fine partial plating has been performed on transparent conductive film patterns, and the following method has been adopted for this purpose.
先ずインジウムスズ酸化物（以下ＩＴＯという）等の透
明導電性摸パターンを所定の方法により形成したガラス
基板上に７オトレジストを塗布した後、所定のフォトマ
スクを用いて選択的に露光し、現像することにより、前
記透明導電性膜パターンのメッキ処理されるべきでない
部分上にのみレジストパターンを形成する。First, a 7-photoresist is applied onto a glass substrate on which a transparent conductive pattern of indium tin oxide (hereinafter referred to as ITO) is formed by a predetermined method, and then selectively exposed using a predetermined photomask and developed. By doing so, a resist pattern is formed only on the portion of the transparent conductive film pattern that is not to be plated.
次に、メッキ処理のための前処理として、上記で得られ
たレジストパターン付きガラス１１を弱アルカリ性溶液
に浸漬して透明導電性膜パターンのメッキ処理されるべ
き部分の表面の活性化を図り、次いで５ｎＣ１２−Ｐｄ
Ｃ１２混合コロイド中に浸漬して触媒を付与し、さらに
触媒を活性化するため強酸の溶液に浸漬する。この際、
この強酸の溶液にはフッ化物を混合しておき、ガラス基
板上に付着した触媒をガラス基板を軽くエツチングする
ことにより除去する。なお、この強酸の溶液としては透
明導電性膜パターンをエツチングしないものが採用され
ている。Next, as a pretreatment for plating, the resist patterned glass 11 obtained above is immersed in a weak alkaline solution to activate the surface of the portion of the transparent conductive film pattern to be plated, Then 5nC12-Pd
The catalyst is applied by immersion in a C12 mixed colloid and further immersed in a solution of strong acid to activate the catalyst. On this occasion,
Fluoride is mixed in this strong acid solution, and the catalyst adhering to the glass substrate is removed by lightly etching the glass substrate. Note that this strong acid solution is one that does not etch the transparent conductive film pattern.
次に、触媒が堆積されたガラス基板を、ｌｉｄ酸ニッケ
ル等のニッケル塩、還元剤および錯化剤等を含有してな
る無電解ニッケルメッキ液に浸漬して、透明導電性膜パ
ターンのメッキ処理されるべき部分にニッケルメッキ層
を形成させる。このメッキ処理によりレジストパターン
の上にもニッケルメッキ層が形成されるが、ガラス基板
表面上の触媒は予め除去されているので、ガラス基板上
にはニッケルメッキ層は形成されない。Next, the glass substrate on which the catalyst has been deposited is immersed in an electroless nickel plating solution containing a nickel salt such as nickel lidate, a reducing agent, a complexing agent, etc. to plate a transparent conductive film pattern. A nickel plating layer is formed on the area to be coated. Through this plating process, a nickel plating layer is also formed on the resist pattern, but since the catalyst on the surface of the glass substrate has been removed in advance, no nickel plating layer is formed on the glass substrate.
次に、ニッケルメッキ層が形成されたガラス基板をアセ
トン、メチルセロソルブアセテート等の＠機溶剤又はＮ
ａＯＨ水溶液等のアルカリ水溶液中に浸漬してレジスト
パターンをその上のニッケルメッキ層とともに剥離し、
透明導電性膜パターンのメッキ処理される部分にのみニ
ッケルメッキ層からなるパターンを有する、透明導電性
膜パターン付き基板を得る。Next, the glass substrate on which the nickel plating layer has been formed is coated with a solvent such as acetone, methyl cellosolve acetate, or N
The resist pattern is peeled off together with the nickel plating layer thereon by immersion in an alkaline aqueous solution such as an aOH aqueous solution,
A substrate with a transparent conductive film pattern is obtained, which has a pattern consisting of a nickel plating layer only on the portion of the transparent conductive film pattern to be plated.
［発明が解決しようとする課題］
上述の従来のメッキパターン形成方法は次のような欠点
があった。即ち、従来のようなメッキ処理のための前処
理方法では基板表面を清浄な状態に保とうとしても、透
明導電性膜パターンのメッキされるべき部分の表面上の
汚れ、異物等を十分に除去できず、ニッケルメッキ処理
後に上記のアルカリ水溶液等を用い超音波あるいはスク
ラブ洗浄によりレジストパターンを剥離する際に、上記
の汚れや異物が原因となってニッケルメッキパターンに
ピンホールやニッケルパターンの剥れが生じるという問
題があった。[Problems to be Solved by the Invention] The conventional plating pattern forming method described above has the following drawbacks. In other words, in conventional pretreatment methods for plating, even when trying to keep the substrate surface clean, it is difficult to sufficiently remove dirt, foreign matter, etc. from the surface of the portion of the transparent conductive film pattern to be plated. However, when the resist pattern is removed by ultrasonic waves or scrub cleaning using the above-mentioned alkaline aqueous solution after nickel plating, the above dirt and foreign matter may cause pinholes in the nickel plating pattern or peeling of the nickel pattern. There was a problem that this occurred.
本発明は、このような問題点乃至欠点を除去するために
なされたものであり、その目的は、透明導電性物質の被
膜又はパターンのメッキ処理されるべき部分の表面上に
存在する汚れ、異物等を取り除き、メッキの付着不良を
防止することができるメッキパターン形成方法を提供す
ることにある。The present invention has been made to eliminate such problems and drawbacks, and its purpose is to eliminate dirt and foreign matter existing on the surface of the transparent conductive material coating or pattern to be plated. It is an object of the present invention to provide a plating pattern forming method that can prevent defects in adhesion of plating by removing such problems.
［課題を解決するための手段］
本発明は上記目的を達成させるためになされたものであ
り、本発明のパターン形成方法は、絶縁性基板上に形成
された透明導電性物質の被膜又はパターンのメッキ処理
されるべき所望部分にメッキ処理のための前処理を施し
た後、メッキ処理を施してメッキ層からなるパターンを
形成する、メッキ法によるパターン形成方法において、
前記メッキ処理のための前処理が、前記透明導電性物質
の被膜又はパターンの前記所望部分の表面をエツチング
処理する工程を含むことを特徴とする。[Means for Solving the Problems] The present invention has been made to achieve the above object, and the pattern forming method of the present invention is a method for forming a pattern of a transparent conductive material formed on an insulating substrate. In a pattern forming method using a plating method, in which a desired portion to be plated is pretreated for plating, and then plated to form a pattern consisting of a plated layer,
The method is characterized in that the pretreatment for the plating treatment includes a step of etching the surface of the desired portion of the transparent conductive material coating or pattern.
［作用］
本発明の方法によれば、透明導電性物質の被膜又はパタ
ーンのメッキ処理されるべき所望部分の表面をエツチン
グ処理することにより、汚れ、異物等が除去されるので
、上記メッキ所望部分の表面上に密着性のあるメッキ層
が形成される。[Operation] According to the method of the present invention, dirt, foreign matter, etc. are removed by etching the surface of the desired portion of the transparent conductive material film or pattern to be plated, so that the desired portion of the transparent conductive material coating or pattern is removed. An adhesive plating layer is formed on the surface.
［実施例〕
本発明のパターン形成方法を透明導電性膜パターンの部
分メッキに適用した実施例を第１図を参照しながら以下
に説明する。[Example] An example in which the pattern forming method of the present invention is applied to partial plating of a transparent conductive film pattern will be described below with reference to FIG.
［予備工程としてのレジストパターン形成工程］アルミ
ノボロシリケートガラスからなる透明絶縁性基板１の一
生表面上に真空蒸着法によりＩＴＯからなる透明導電性
膜を形成し、その後レジスト塗布・露光・現像・エツチ
ング・レジスト剥離の各工程を含むフォトリソグラフィ
法により透明導電性膜をパターン化することにより、透
明導電性膜パターン２ａ、２ｂを交互に有する透明絶縁
性基板１を得たく第１図（１）参照）。なお、本実施例
は部分メッキに関するものであり、後）ホするようにカ
ラーフィルターのリードパターンに相当する透明導電性
膜パターン２ａ（線幅１０ｕｌ）には膜厚０．１７μｍ
のニッケルメッキ層５ａが被盾されるが、カラーフィル
ターのピクセルパターンに相当する透明導電性膜パター
ン２ｂ（線幅１００μ−）にはニッケルメッキ苦は被着
されない。[Resist pattern forming step as a preliminary step] A transparent conductive film made of ITO is formed on the surface of the transparent insulating substrate 1 made of aluminoborosilicate glass by vacuum evaporation, and then resist is applied, exposed, developed, and etched. - To obtain a transparent insulating substrate 1 having transparent conductive film patterns 2a and 2b alternately by patterning the transparent conductive film by a photolithography method including each step of resist stripping, see FIG. 1 (1). ). Note that this example relates to partial plating, and as shown in (a) below, the transparent conductive film pattern 2a (line width 10 ul) corresponding to the lead pattern of the color filter has a film thickness of 0.17 μm.
However, the transparent conductive film pattern 2b (line width: 100 μm) corresponding to the pixel pattern of the color filter is not coated with nickel plating layer 5a.
次に、透明導電着膜パターン２ａ、２ｂを有する透明絶
縁性基板１を純水、イソプロピルアルコール中で各４．
５分ずつ超音波洗浄し、次いでフロンペーパー乾燥を行
なった後、透明導電性膜パターン２ａ、２ｂ及びこれら
のパターンを被着している基板１の表面にポジ型フォト
レジスト（例：ヘキスト社製ＡＺ１３５０）をスピンコ
ード法により１．０μｍの厚さに塗布し、９０℃で３０
分間ベータした。Next, the transparent insulating substrate 1 having the transparent conductive deposited film patterns 2a and 2b is placed in pure water and isopropyl alcohol for 4 hours each.
After performing ultrasonic cleaning for 5 minutes each and then drying with fluoropaper, a positive photoresist (for example, manufactured by Hoechst) is applied to the surfaces of the transparent conductive film patterns 2a, 2b and the substrate 1 on which these patterns are adhered. AZ1350) was coated to a thickness of 1.0 μm using a spin code method and heated at 90°C for 30 minutes.
Beta'd for a minute.
次に所定のフォトマスク（露光・現像後パターン２ｂ上
にのみレジストが残るようなパターンを有するもの）を
用い、前記フォトレジストを紫外線により選択的に密着
露光した後、所定の現像液（例：△Ｚ専用現像液を純水
により２倍に希釈した溶液）を用いて現像処理して、露
光部分のレジストを溶解除去しレジストパターン３を透
明導電性膜パターン２ｂ上に形成する（第１図（２）参
照）。Next, the photoresist is selectively exposed to ultraviolet rays using a predetermined photomask (having a pattern such that the resist remains only on the pattern 2b after exposure and development), and then a predetermined developer (e.g. The resist pattern 3 is formed on the transparent conductive film pattern 2b by performing a development process using a solution prepared by diluting a △Z exclusive developer to 2 times with pure water, and dissolving and removing the resist in the exposed area (see Fig. 1). (See (2)).
なお、透明導電性膜パターン２ｂ、２ｂ間の７４トレジ
ストを露光することから、透明導電性膜パターン２ａ上
及び基板１表面上の７４トレジストは露光され、現＠処
理により溶解除去されているので、透明導電性膜パター
ン２ａ及び基板１上にはレジストパターンは形成されな
い。Note that since the transparent conductive film patterns 2b and 74 resists between 2b are exposed, the resists 74 on the transparent conductive film patterns 2a and on the surface of the substrate 1 are exposed and dissolved and removed by the current treatment. No resist pattern is formed on the transparent conductive film pattern 2a and the substrate 1.
［メッキ前処理工程］
このようにして得られた透明導電性膜パターン２ａ、２
ｂ及びレジストパターン３付き基板１を希釈塩酸（３５
重量％塩酸と水とを容積比１：１で混合したもの、液温
２０℃）に２分間浸漬処理し、その後純水にて充分リン
スした。この処理によって、透明導電性躾パターン２ａ
の表面部分がエツチングされる。その結果、この処理後
の透明導電性膜パターン２ａの表面は汚れ、異物等のな
いものであった。[Plating pre-treatment step] Transparent conductive film patterns 2a, 2 thus obtained
b and the substrate 1 with the resist pattern 3 in diluted hydrochloric acid (35
The sample was immersed for 2 minutes in a mixture of wt% hydrochloric acid and water at a volume ratio of 1:1 (liquid temperature: 20°C), and then thoroughly rinsed with pure water. By this process, the transparent conductive pattern 2a
The surface part of is etched. As a result, the surface of the transparent conductive film pattern 2a after this treatment was free of dirt, foreign matter, and the like.
次いで無電解メッキ処理のためのその後の前処理を行な
った。すなわち、ＩＴＯリダクタ−溶液「１３１のＩＴ
Ｏリダクタ−（奥野製薬工業（株）製）を５２７の水に
混合し、塩酸にてｐＨを９．０〜９．２の弱アルカリ性
に調整したちの：温度４０℃］に透明導電性膜パターン
２ａ、２ｂ及びレジストパターン３付き基＆１を２分間
浸漬した後、よく純水でリンスし、５ｎＣ１２−ＰｄＣ
１２混合コロイド［例えば奥野製薬工業（株）製のＩＴ
Ｏ触媒３．２１、ＩＴＯ５ＡＬ２．５Ｋｙ及び３５重ｆ
ｆ１％塩！！６．８１を５０１ＣＤ水に混合した水溶液
：温度３０℃］中に３分間浸漬して触媒４ａ、４ｂを付
与したく第１図（３）参照）。Subsequent pretreatment for electroless plating was then performed. That is, ITO reductor solution "131 IT
O-reductor (manufactured by Okuno Pharmaceutical Co., Ltd.) was mixed with 527 water, and the pH was adjusted to a weak alkalinity of 9.0 to 9.2 with hydrochloric acid. After immersing patterns 2a, 2b and resist pattern 3-attached group &1 for 2 minutes, rinse well with pure water and add 5nC12-PdC.
12 mixed colloid [for example, IT manufactured by Okuno Pharmaceutical Co., Ltd.
O catalyst 3.21, ITO5AL2.5Ky and 35 heavy f
f1% salt! ! The catalysts 4a and 4b were immersed in an aqueous solution of 6.81 mixed with 501CD water at a temperature of 30° C. for 3 minutes (see FIG. 1 (3)).
次いで純水でリンスした後、フッ化物を含有づる酸溶液
［例えば奥野製薬工業〈株）製のＩＴＯアクセレーター
１０１を水４０１に混合したちの温度２０〜ｂ
性化し、同時にこの酸溶液で基板１表面をエツチングす
ることにより基板１表面上の触媒を除去したく第１図（
４）参照）。Next, after rinsing with pure water, a fluoride-containing acid solution [for example, ITO Accelerator 101 manufactured by Okuno Pharmaceutical Co., Ltd.] is mixed with water 401 at a temperature of 20 to 200°C, and at the same time, the substrate is treated with this acid solution. In order to remove the catalyst on the surface of the substrate 1 by etching the surface of the substrate 1, as shown in FIG.
4)).
［メッキ工程］
次に、上記の様に前処理された触媒４ａ、４ｂを有する
基板１を８０℃に加熱されているニッケルメッキ液（例
えば奥野製薬工業（株）製のＩＴＯ−９０ＭとＩＴＯ−
９０−１をそれぞれ３．３１．１．６１採り、これらに
水３０１を混合し、Ｎ ｉ ０１２等のニッケル塩及び
Ｎ ａ Ｈ２Ｐ Ｏ２等の還元剤等を加えた混合溶液：
ｐＨ＝５．１＞に約３分間浸漬して、厚さ２８００人の
ニッケルメッキ層５ａ、５ｂを形成した（第１図（５）
参照）。[Plating process] Next, the substrate 1 having the catalysts 4a and 4b pretreated as described above is coated with a nickel plating solution heated to 80°C (for example, ITO-90M and ITO-90M manufactured by Okuno Pharmaceutical Co., Ltd.).
3.31.1.61 of each of 90-1 were taken, water 301 was mixed with these, and a nickel salt such as N i 012 and a reducing agent such as Na H2P O2 were added to create a mixed solution:
It was immersed for about 3 minutes in pH=5.1> to form nickel plating layers 5a and 5b with a thickness of 2800 mm (Fig. 1 (5)).
reference).
［レジスト及びメッキ剥離工程］
前工程でメッキ層５ａ、５ｂを形成した基板１を５重量
％のＮａＯＨ溶液中で１．５時間超音波洗浄し、レジス
トパターン３を、その上に堆積したニッケルメッキ層５
ｂとともに完全に剥離し、カラーフィルターのビクセル
パターンに相当する透明導電性膜パターン２ｂにはメッ
キ層は存在せず、カラーフィルターのリードパターンに
相当覆る透明導電性膜パターン２ａ上にのみメッキ層５
ａを有する基板１を得たく第１図（６）参照）。[Resist and plating removal process] The substrate 1 on which the plating layers 5a and 5b were formed in the previous step was ultrasonically cleaned in a 5% by weight NaOH solution for 1.5 hours, and the resist pattern 3 was removed from the nickel plating deposited thereon. layer 5
There is no plating layer on the transparent conductive film pattern 2b that corresponds to the pixel pattern of the color filter, and the plating layer 5 is completely peeled off along with b, and the plating layer 5 is only on the transparent conductive film pattern 2a that corresponds to the lead pattern of the color filter.
(See FIG. 1 (6)) to obtain a substrate 1 having a.
本実施例においては、試料５０枚について上記の各処理
を行ない、それぞれの試料についてメッキ状態を観察し
た。また比較例として、同数の試ｒ１５０枚を、希釈塩
酸による浸漬処理を行なわなかった以外は実施例と全く
同様に処理し、それぞれの試料についてメッキ状態を観
察した。In this example, each of the above-mentioned treatments was performed on 50 samples, and the plating state of each sample was observed. As a comparative example, the same number of 150 samples were treated in exactly the same manner as in the example except that the dipping treatment with diluted hydrochloric acid was not performed, and the plating state of each sample was observed.
実施例及び比較例の結果を第１表に示す。Table 1 shows the results of Examples and Comparative Examples.
第１表
ここで、良品とは、剥れ、ピンホールが認められないも
の、不良品とは剥れ、ピンホールが認められたもの、そ
の他の不良品とは扱いキズ等が原因によるものであり、
その他の不良品も不良品（剥れ、ピンホール品）と同様
に不良品として歩留りを求めた。Table 1 Here, good products are those with no peeling or pinholes, defective products are those with peeling or pinholes, and other defective products are those caused by handling scratches, etc. can be,
The yield of other defective products was determined as defective products in the same way as defective products (peeling and pinhole products).
この結果から明らかなように、本発明によれば、従来法
と比べはるかに高い歩留りで部分ニッケルメッキを行な
うことができることが判る。As is clear from these results, according to the present invention, it is possible to perform partial nickel plating with a much higher yield than the conventional method.
以上、実施例により本発明を説明してきたが、本発明は
下記の変形例及び応用例を含むものである。Although the present invention has been described above with reference to Examples, the present invention includes the following modifications and applications.
（１）実施例では、３５重量％塩酸と水との容積１：１
の混合液を用いた。その理由は、２０．２４重量％以下
の塩酸は共沸混合物となり塩酸ガスの発生を最小限に抑
えることができるが、上記混合液も塩酸濃度２０．２４
重量％以下となるので、取り扱いが容易になるからであ
る。しかし２０．２４重量％を超える塩酸を含有する水
溶液を用いても良いことはもちろんである。また塩酸単
独でもよいが、塩酸と硝酸の混合水溶液でも同様な効果
が得られる。更に、ヨウ化水素や塩化第２鉄の水溶液な
ど、透明導電性膜をエツチングすることができる溶液を
用いてもよい。(1) In the example, the volume of 35% by weight hydrochloric acid and water is 1:1
A mixture of these was used. The reason for this is that hydrochloric acid with a concentration of 20.24% by weight or less becomes an azeotrope and can minimize the generation of hydrochloric acid gas, but the above mixed solution also has a hydrochloric acid concentration of 20.24% by weight.
This is because handling becomes easier since the amount is less than % by weight. However, it is of course possible to use an aqueous solution containing more than 20.24% by weight of hydrochloric acid. Further, although hydrochloric acid alone may be used, a mixed aqueous solution of hydrochloric acid and nitric acid can also provide the same effect. Furthermore, a solution capable of etching a transparent conductive film, such as an aqueous solution of hydrogen iodide or ferric chloride, may be used.
（２）実施例では透１ｌｌｌ電性躾からなるリードパタ
ーンが部分メッキ処理されたが、本発明の方法は透明導
電性膜からなるピクセルパターンに部分メッキ処理を施
す場合に適用しても良い。すなわち、カラーフィルター
において黒色の光硬化型樹脂からなる遮光パターン（ブ
ラックマスク）を透明導電ＭＩＴＩからなるピクセルパ
ターンの間隙に形成する前に、このピクセルパターンに
ニッケルメッキ層を形成しても良い。このニッケルメッ
キ層は、ニッケルメッキ層形成後に塗布された未硬化の
黒色顔料含有光硬化型樹脂を背面露光して硬化させる際
のマスクとして動き、黒色の光硬化型樹脂からなる遮光
パターン（ブラックマスク）の形成後は剥離され、ニッ
ケルメッキ層の剥離後のピクセルパターン上には高分子
′Ｒ着法等により単色ないし多色の着色層が形成される
。(2) In the example, a lead pattern made of a transparent conductive film was partially plated, but the method of the present invention may also be applied to a case where a pixel pattern made of a transparent conductive film is partially plated. That is, before forming a light shielding pattern (black mask) made of a black photocurable resin in the gap between the pixel patterns made of transparent conductive MITI in the color filter, a nickel plating layer may be formed on the pixel patterns. This nickel plating layer acts as a mask when the uncured black pigment-containing photocurable resin applied after the formation of the nickel plating layer is exposed to light on the back side and cured, and serves as a light-shielding pattern (black mask) made of black photocurable resin. ) is peeled off, and a monochromatic or multicolored colored layer is formed on the pixel pattern after the nickel plating layer is peeled off using a polymer R deposition method or the like.
本発明の方法は透明導電性膜パターンの全部をメッキ処
理する場合に適用しても良く、その例として透明導電性
膜からなるピクセルパターン及びリードパターンの双方
にメッキ層を形成する場合が挙げられる。すなわち、カ
ラーフィルターにおいて黒色の光硬化型樹脂からなる遮
光パターン（ブラックマスク）をピクセルパターンの間
隙に形成する前に、ピクセルパターン及びリードパター
ンにニッケルメッキ層を形成し、その後、各パターンを
形成した透明絶縁性１＆上にレジストを塗布した後、リ
ードパターン上のレジストのみを露光・現像工程を絆で
除去し、次いでメッキ剥離液により露出したリードパタ
ーン上のメッキ層を剥離する。その後、レジストを剥離
してビクセルパターン上にのみニッケルメッキ層を残存
させ、上記したと同様にブラックマスクを形成する。The method of the present invention may be applied to the case where the entire transparent conductive film pattern is plated, such as when a plating layer is formed on both the pixel pattern and the lead pattern made of the transparent conductive film. . That is, before forming a light shielding pattern (black mask) made of a black photocurable resin in the gap between the pixel patterns in the color filter, a nickel plating layer was formed on the pixel pattern and the lead pattern, and then each pattern was formed. After applying a resist on the transparent insulating material 1&, only the resist on the lead pattern is removed by an exposure/development process, and then the plating layer on the exposed lead pattern is removed using a plating stripping solution. Thereafter, the resist is peeled off to leave the nickel plating layer only on the vixel pattern, and a black mask is formed in the same manner as described above.
（３） 実施例では、無電解メッキ法によりニッケル
メッキ層を形成させたが、無電解メッキすることができ
る金属はニッケルに限定されるものではなく、銀、金、
銅、クロム等の純金属やこれらを組み合わせた金属及び
鉄・ニッケル合金等の合金を挙げることができる。(3) In the examples, the nickel plating layer was formed by electroless plating, but metals that can be electrolessly plated are not limited to nickel, and include silver, gold,
Examples include pure metals such as copper and chromium, metals that are a combination of these metals, and alloys such as iron-nickel alloys.
（４）透明導電性物質はＩＴＯ以外に、酸化インジラム
や酸化錫等の物質、あるいはそれらにｓｂやＡｓを混合
したものであってもよい。また、透明導電性膜は真空蒸
る法以外に、スパッタリング法、ＣＶＤ法、塗布法、デ
イツプ法等の方法によって形成してもよい。(4) In addition to ITO, the transparent conductive substance may be a substance such as indilam oxide or tin oxide, or a mixture thereof with sb or arsenic. Further, the transparent conductive film may be formed by a sputtering method, a CVD method, a coating method, a dip method, or the like other than the vacuum vaporization method.
（５） 実施例ではメッキされる透明導電性膜はパタ
ーン化したものであったが、絶縁性基板上にパターン化
せずに形成された透明導電性物質の被膜であってもよく
、この場合は、活被股上にレジストパターンを形成し、
レジストパターンが形成されていない露出部分にメッキ
処理が施される。(5) In the examples, the transparent conductive film to be plated was patterned, but it may also be a transparent conductive film formed on an insulating substrate without patterning. forms a resist pattern on the active crotch,
A plating process is performed on the exposed portion where the resist pattern is not formed.
（６） 絶縁性基板としては、ソーダライムガラスや
ボロシリケートガラス等のガラス、あるいはセラミック
等を用いてもよい。(6) As the insulating substrate, glass such as soda lime glass or borosilicate glass, or ceramic may be used.
レジストパターンを形成するに際しては、ポジ型及びネ
ガ型フォトレジスト以外に電子線レジス１へを用い、そ
れを電子線により露光する工程を経てレジメｉ−パター
ンを形成してもよい。When forming a resist pattern, an electron beam resist 1 other than a positive type or negative type photoresist may be used, and a resist pattern may be formed through a step of exposing it to an electron beam.
（７）実施例では、メッキ層の付着力増強、メッキ処理
の安定化をより促進づ−るため、ＩＴＯリダクタ−溶液
からなる弱アルカリ液で処理したが、この処理を施さな
くとも付着力は充分でメッキ処理も安定づることを実験
で確認しており、省略してもよい。(7) In the example, in order to enhance the adhesion of the plating layer and to further stabilize the plating process, a weak alkaline solution consisting of an ITO reductor solution was used. However, even without this treatment, the adhesion was It has been confirmed through experiments that this is sufficient and the plating process is stable, so it may be omitted.
［発明の効果］
以上詳述した通り、本発明のパターン形成方法によれば
、メッキ層の剥れやピンホール等の欠陥のＲ１を防止で
き、メッキ品の歩留りが向上するという技術的効果が得
られる。[Effects of the Invention] As detailed above, the pattern forming method of the present invention has the technical effect of preventing R1 defects such as peeling of the plating layer and pinholes, and improving the yield of plated products. can get.
第１図は本発明のパターン形成方法を説明するための工
程図である。
１・・・基板、２ａ、２ｂ・・・透明導電性膜パターン
、３・・・レジストパターン、４ａ、４ｂ・・・触媒、
５ａ。
５ｂ・・・メッキ層口FIG. 1 is a process diagram for explaining the pattern forming method of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2a, 2b... Transparent conductive film pattern, 3... Resist pattern, 4a, 4b... Catalyst,
5a. 5b...Plating layer opening
Claims (1)
はパターンのメッキ処理されるべき所望部分にメッキ処
理のための前処理を施した後、メッキ処理を施してメッ
キ層からなるパターンを形成する、メッキ法によるパタ
ーン形成方法において、前記メッキ処理のための前処理
が、前記透明導電性物質の被膜又はパターンの前記所望
部分の表面をエッチング処理する工程を含むことを特徴
とするパターン形成方法。1. After performing pretreatment for plating on the desired portion of the transparent conductive material coating or pattern formed on the insulating substrate to be plated, perform plating to form a pattern consisting of a plated layer. A pattern forming method using a plating method, wherein the pretreatment for the plating treatment includes a step of etching the surface of the desired portion of the transparent conductive substance coating or pattern. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63162964A JPH0212204A (en) | 1988-06-30 | 1988-06-30 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63162964A JPH0212204A (en) | 1988-06-30 | 1988-06-30 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0212204A true JPH0212204A (en) | 1990-01-17 |
Family
ID=15764627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63162964A Pending JPH0212204A (en) | 1988-06-30 | 1988-06-30 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0212204A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010095427A1 (en) | 2009-02-17 | 2010-08-26 | 株式会社日本触媒 | Polyacrylic acid-based water-absorbing resin powder and method for producing the same |
-
1988
- 1988-06-30 JP JP63162964A patent/JPH0212204A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010095427A1 (en) | 2009-02-17 | 2010-08-26 | 株式会社日本触媒 | Polyacrylic acid-based water-absorbing resin powder and method for producing the same |
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