JP3977379B2 - 薄膜材料の結晶化方法及びその装置 - Google Patents
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- 239000000463 material Substances 0.000 title claims description 117
- 239000010409 thin film Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 39
- 239000013078 crystal Substances 0.000 claims description 42
- 238000002425 crystallisation Methods 0.000 claims description 37
- 230000008025 crystallization Effects 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 239000002210 silicon-based material Substances 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000003111 delayed effect Effects 0.000 claims description 8
- 238000007493 shaping process Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Description
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(2)が、所定の強度I A以上の極大ピーク(22,23)を少なくとも2つ有し、材料(12,112)に溶融を生ずる極大ピーク(22)から極小点(21)にまで強度が低下して材料(12,112)に結晶化を生じた後、材料(12,112)に溶融を生ずる極大ピーク(23)を有することを特徴とする薄膜材料の結晶化方法である。
請求項2の発明は、薄膜状のシリコン製の材料(12,112)に、パルス状レーザを複数回照射して結晶粒を形成する際、パルス状レーザを複数の分割レーザに分割・遅延させて材料(12,112)に照射する薄膜材料の結晶化方法において、
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(3)が、照射の開始点(30)と第1 極小点(31)間の第1極大ピーク(41)と、第1極小点(31)と第2極小点(32)間の第2極大ピーク(42)と、第(N−1)極小点(37)と第N極小点(38)間の第N極大ピーク(48)と、第N極小点と照射の終了点(50)間の第(N+1)極大ピーク(49)とからなる材料(12,112)に結晶化を生ずる合計N個の極小点と材料(12,112)に溶融を生ずる(N+1)個の極大ピークとを有し、
Nが3以上の整数であり、
第n極小点の強度が、直前の第n極大ピークの強度Inに対して、I n/10以上でI n/2以下の強度であり、nが1〜Nの範囲の整数であることを特徴とする薄膜材料の結晶化方法である。
請求項3の発明は、第n極小点の強度が、直後の第n+1極大ピークの強度Inに対して、I n/10以上でI n/2以下の強度であることを特徴とする請求項2の薄膜材料の結晶化方法である。
請求項4の発明は、前記材料(12,112)の1箇所当たりのパルス状レーザの照射回数が10回以下であることを特徴とする請求項1,2又は3の薄膜材料の結晶化方法である。
請求項5の発明は、前記パルス状レーザが直線偏光でないレーザであつて、材料(12,112)の法線に対する入射光線の入射角が1°以上であることを特徴とする請求項1,2,3又は4の薄膜材料の結晶化方法である。
請求項6の発明は、薄膜状のシリコン製の材料(12,112)に、レーザ発振器(1,101)からのパルス状レーザ(20,102)を複数回照射して結晶粒を形成する際、パルス状レーザを複数の分割レーザに分割・遅延させて材料(12,112)に照射する薄膜材料の結晶化装置において、
パルス状レーザを複数の分割レーザに遅延させて分割する分割手段と、
複数の分割レーザの強度分布を整形して材料(12,112)に重畳させて照射する整形手段(110,111)とを有し、
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(2)が、所定の強度(I A)以上の極大ピーク(22,23)を少なくとも2つ有し、材料(12,112)に溶融を生ずる極大ピーク(22)から極小点(21)にまで強度が低下して材料(12,112)に結晶化を生じた後、材料(12,112)に溶融を生ずる極大ピーク(23)を有することを特徴とする薄膜材料の結晶化装置である。
XeClエキシマレーザ発振器101よりパルスエネルギー:670mJ,繰返し周波数:300Hzで出射したパルス波形のパルス状レーザ102を、反射率がR1,R2,R3,R4の4つのミラー103,104,105,106によつて分割・方向転換し、前記ミラー103,104,105,106間に設けた遅延回路107,108,109により隣接する分割レーザ120a〜120d同士を時間遅延させ、長軸ホモジナイザー110に次々に入射して、長軸:200mm長さの矩形波の空間強度分布に公知手段で整形し、材料12であるガラス上の膜厚50nmのa−Si膜112へ照射した。ミラー103の反射率はR1、ミラー104の反射率はR2、ミラー105の反射率はR3、全反射ミラー106の反射率はR4=100%である。
2,3:パルス波形
12,112:薄膜状のシリコン製の材料
20,102:パルス状レーザ
20a,20b,120a、120b、120c、120d:分割レーザ
21,31,32,37,38:極小点
22,23,41,42,48,49:極大ピーク
30:開始点
50:終了点
103,104,105:半透過ミラー(分割手段)
106:全反射ミラー(分割手段)
107,108,109:遅延回路(分割手段)
110,111:ホモジナイザー(整形手段)
221:半透過ミラー(分割手段)
222:全反射ミラー(分割手段)
223:遅延回路(分割手段)
Claims (6)
- 薄膜状のシリコン製の材料(12,112)に、パルス状レーザを複数回照射して結晶粒を形成する際、パルス状レーザを複数の分割レーザに分割・遅延させて材料(12,112)に照射する薄膜材料の結晶化方法において、
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(2)が、所定の強度(I A)以上の極大ピーク(22,23)を少なくとも2つ有し、材料(12,112)に溶融を生ずる極大ピーク(22)から極小点(21)にまで強度が低下して材料(12,112)に結晶化を生じた後、材料(12,112)に溶融を生ずる極大ピーク(23)を有することを特徴とする薄膜材料の結晶化方法。 - 薄膜状のシリコン製の材料(12,112)に、パルス状レーザを複数回照射して結晶粒を形成する際、パルス状レーザを複数の分割レーザに分割・遅延させて材料(12,112)に照射する薄膜材料の結晶化方法において、
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(3)が、照射の開始点(30)と第1 極小点(31)間の第1極大ピーク(41)と、第1極小点(31)と第2極小点(32)間の第2極大ピーク(42)と、第(N−1)極小点(37)と第N極小点(38)間の第N極大ピーク(48)と、第N極小点と照射の終了点(50)間の第(N+1)極大ピーク(49)とからなる材料(12,112)に結晶化を生ずる合計N個の極小点と材料(12,112)に溶融を生ずる(N+1)個の極大ピークとを有し、
Nが3以上の整数であり、
第n極小点の強度が、直前の第n極大ピークの強度Inに対して、I n/10以上でI n/2以下の強度であり、nが1〜Nの範囲の整数であることを特徴とする薄膜材料の結晶化方法。 - 第n極小点の強度が、直後の第n+1極大ピークの強度Inに対して、I n/10以上でI n/2以下の強度であることを特徴とする請求項2の薄膜材料の結晶化方法。
- 前記材料(12,112)の1箇所当たりのパルス状レーザの照射回数が10回以下であることを特徴とする請求項1,2又は3の薄膜材料の結晶化方法。
- 前記パルス状レーザが直線偏光でないレーザであつて、材料(12,112)の法線に対する入射光線の入射角が1°以上であることを特徴とする請求項1,2,3又は4の薄膜材料の結晶化方法。
- 薄膜状のシリコン製の材料(12,112)に、レーザ発振器(1,101)からのパルス状レーザ(20,102)を複数回照射して結晶粒を形成する際、パルス状レーザを複数の分割レーザに分割・遅延させて材料(12,112)に照射する薄膜材料の結晶化装置において、
パルス状レーザを複数の分割レーザに遅延させて分割する分割手段と、
複数の分割レーザの強度分布を整形して材料(12,112)に重畳させて照射する整形手段(110,111)とを有し、
エキシマレーザからなる複数の分割レーザの重畳によつて形成される1つのパルス状レーザのパルス波形(2)が、所定の強度(I A)以上の極大ピーク(22,23)を少なくとも2つ有し、材料(12,112)に溶融を生ずる極大ピーク(22)から極小点(21)にまで強度が低下して材料(12,112)に結晶化を生じた後、材料(12,112)に溶融を生ずる極大ピーク(23)を有することを特徴とする薄膜材料の結晶化装置。
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JP2005095938A JP3977379B2 (ja) | 2005-03-29 | 2005-03-29 | 薄膜材料の結晶化方法及びその装置 |
PCT/JP2006/302459 WO2006103836A1 (ja) | 2005-03-29 | 2006-02-13 | 薄膜材料の結晶化方法及びその装置 |
KR1020077024239A KR100930855B1 (ko) | 2005-03-29 | 2006-02-13 | 박막 재료의 결정화 방법 및 그 장치 |
TW095107073A TW200717608A (en) | 2005-03-29 | 2006-03-02 | Crystallization method of thin film material and equipment using this method |
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WO2011056787A1 (en) * | 2009-11-03 | 2011-05-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
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US20040097103A1 (en) * | 2001-11-12 | 2004-05-20 | Yutaka Imai | Laser annealing device and thin-film transistor manufacturing method |
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KR20070112485A (ko) | 2007-11-26 |
TW200717608A (en) | 2007-05-01 |
KR100930855B1 (ko) | 2009-12-10 |
TWI301293B (ja) | 2008-09-21 |
WO2006103836A1 (ja) | 2006-10-05 |
JP2006278746A (ja) | 2006-10-12 |
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