TW200717608A - Crystallization method of thin film material and equipment using this method - Google Patents
Crystallization method of thin film material and equipment using this methodInfo
- Publication number
- TW200717608A TW200717608A TW095107073A TW95107073A TW200717608A TW 200717608 A TW200717608 A TW 200717608A TW 095107073 A TW095107073 A TW 095107073A TW 95107073 A TW95107073 A TW 95107073A TW 200717608 A TW200717608 A TW 200717608A
- Authority
- TW
- Taiwan
- Prior art keywords
- maximum peak
- thin film
- strength
- film material
- maximum
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 6
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000002425 crystallisation Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003111 delayed effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
To provide a crystallization method of a thin film material and equipment using this method which can melt the material at a maximum peak point equivalent to maximum strength I or other maximum peak points, and crystallize the material at a minimum point between two maximum peak points. When crystal grains are formed by irradiating a pulsed laser several times to the thin film silicon materials 12 and 112, the pulsed laser is divided into many split lasers and delayed. In the crystallization method of the thin film material in which the pulsed lasers are irradiated to the materials 12 and 112, a single pulsed laser signal waveform 2 generated by the superposition of many split lasers has the maximum peak point 23 equivalent to the maximum strength I, at least one maximum peak point 22 with strength exceeding I/2, and the minimum point 21 which is positioned between at least two adjacent maximum peak points 22 and 23 and has strength reduced to I/2 or less.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005095938A JP3977379B2 (en) | 2005-03-29 | 2005-03-29 | Method and apparatus for crystallizing thin film material |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200717608A true TW200717608A (en) | 2007-05-01 |
TWI301293B TWI301293B (en) | 2008-09-21 |
Family
ID=37053105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095107073A TW200717608A (en) | 2005-03-29 | 2006-03-02 | Crystallization method of thin film material and equipment using this method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP3977379B2 (en) |
KR (1) | KR100930855B1 (en) |
TW (1) | TW200717608A (en) |
WO (1) | WO2006103836A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4863407B2 (en) * | 2009-02-02 | 2012-01-25 | 株式会社日本製鋼所 | Laser annealing method for semiconductor film |
WO2011056787A1 (en) * | 2009-11-03 | 2011-05-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
TWI528418B (en) * | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | Crystallization processing for semiconductor applications |
JP5454911B2 (en) * | 2010-03-25 | 2014-03-26 | 株式会社日本製鋼所 | Method of manufacturing annealed body and laser annealing apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174216A (en) * | 1997-08-29 | 1999-03-16 | Japan Steel Works Ltd:The | Pulse light irradiation method and device thereof |
JP3289681B2 (en) * | 1998-07-01 | 2002-06-10 | 日本電気株式会社 | Method for forming semiconductor thin film, pulsed laser irradiation device, and semiconductor device |
JP2002261042A (en) * | 2000-12-26 | 2002-09-13 | Semiconductor Energy Lab Co Ltd | Device and method for irradiating laser |
JP2002270510A (en) * | 2000-12-26 | 2002-09-20 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
US20040097103A1 (en) * | 2001-11-12 | 2004-05-20 | Yutaka Imai | Laser annealing device and thin-film transistor manufacturing method |
-
2005
- 2005-03-29 JP JP2005095938A patent/JP3977379B2/en active Active
-
2006
- 2006-02-13 KR KR1020077024239A patent/KR100930855B1/en active IP Right Grant
- 2006-02-13 WO PCT/JP2006/302459 patent/WO2006103836A1/en not_active Application Discontinuation
- 2006-03-02 TW TW095107073A patent/TW200717608A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20070112485A (en) | 2007-11-26 |
KR100930855B1 (en) | 2009-12-10 |
TWI301293B (en) | 2008-09-21 |
WO2006103836A1 (en) | 2006-10-05 |
JP3977379B2 (en) | 2007-09-19 |
JP2006278746A (en) | 2006-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |