JP3883777B2 - フォトレジストパターン形成方法 - Google Patents

フォトレジストパターン形成方法 Download PDF

Info

Publication number: JP3883777B2
Authority: JP; Japan
Prior art keywords: photoresist pattern; forming; pattern according; exposure; photosensitive agent
Prior art date: 1999-04-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2000108608A

Other languages

English (en)

Japanese (ja)

Other versions

JP2000311854A (ja

Inventor

載昌鄭

珍秀金

亨基金

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hynix Semiconductor Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-04-08

Filing date

2000-04-10

Publication date

2007-02-21

2000-04-10 Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc

2000-11-07 Publication of JP2000311854A publication Critical patent/JP2000311854A/ja

2007-02-21 Application granted granted Critical

2007-02-21 Publication of JP3883777B2 publication Critical patent/JP3883777B2/ja

2020-04-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims description 51
229920002120 photoresistant polymer Polymers 0.000 title claims description 42
239000003795 chemical substances by application Substances 0.000 claims description 19
239000003504 photosensitizing agent Substances 0.000 claims description 17
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
239000004065 semiconductor Substances 0.000 claims description 9
239000000758 substrate Substances 0.000 claims description 7
239000007864 aqueous solution Substances 0.000 claims description 6
238000010438 heat treatment Methods 0.000 claims description 6
239000000178 monomer Substances 0.000 claims description 4
238000004528 spin coating Methods 0.000 claims description 4
239000003513 alkali Substances 0.000 claims description 3
238000010884 ion-beam technique Methods 0.000 claims description 3
150000001412 amines Chemical class 0.000 description 13
239000002253 acid Substances 0.000 description 10
229920000642 polymer Polymers 0.000 description 9
239000012298 atmosphere Substances 0.000 description 7
230000000052 comparative effect Effects 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000000203 mixture Substances 0.000 description 4
239000011347 resin Substances 0.000 description 4
229920005989 resin Polymers 0.000 description 4
239000002904 solvent Substances 0.000 description 4
DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
238000011161 development Methods 0.000 description 3
230000018109 developmental process Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
239000000126 substance Substances 0.000 description 3
125000002723 alicyclic group Chemical group 0.000 description 2
125000001931 aliphatic group Chemical group 0.000 description 2
238000000576 coating method Methods 0.000 description 2
230000003111 delayed effect Effects 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
238000011160 research Methods 0.000 description 2
239000007921 spray Substances 0.000 description 2
FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
230000003321 amplification Effects 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
235000009508 confectionery Nutrition 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000004132 cross linking Methods 0.000 description 1
239000003431 cross linking reagent Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000002156 mixing Methods 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
229920000058 polyacrylate Polymers 0.000 description 1
238000006116 polymerization reaction Methods 0.000 description 1
230000007261 regionalization Effects 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000003860 storage Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Materials For Photolithography (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP2000108608A 1999-04-08 2000-04-10 フォトレジストパターン形成方法 Expired - Fee Related JP3883777B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR10-1999-0012383A KR100367502B1 (ko)	1999-04-08	1999-04-08	반도체소자의 미세패턴 제조방법
KR1999P-12383		1999-04-08

Publications (2)

Publication Number	Publication Date
JP2000311854A JP2000311854A (ja)	2000-11-07
JP3883777B2 true JP3883777B2 (ja)	2007-02-21

Family

ID=19579164

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2000108608A Expired - Fee Related JP3883777B2 (ja)	1999-04-08	2000-04-10	フォトレジストパターン形成方法

Country Status (4)

Country	Link
US (1)	US6403287B1 (ko)
JP (1)	JP3883777B2 (ko)
KR (1)	KR100367502B1 (ko)
TW (1)	TWI274966B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20030043724A (ko) *	2001-11-27	2003-06-02	엔이씨 일렉트로닉스 코포레이션	반도체 장치 제조 방법
US7875415B2 (en) *	2005-12-30	2011-01-25	Intel Corporation	Helical pixilated photoresist
JP2007305697A (ja) *	2006-05-09	2007-11-22	Az Electronic Materials Kk	フォトレジストの塗布方法
CN110928149B (zh) *	2018-09-20	2024-04-19	长鑫存储技术有限公司	关键尺寸的控制方法及控制***
US10994300B2 (en)	2018-11-27	2021-05-04	Service Support Specialties, Inc	Method and/or system for coating a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59114820A (ja) *	1982-12-21	1984-07-03	Fujitsu Ltd	パタ−ン形成方法
JP3000745B2 (ja) *	1991-09-19	2000-01-17	富士通株式会社	レジスト組成物とレジストパターンの形成方法
JP3115134B2 (ja) *	1992-11-27	2000-12-04	松下電器産業株式会社	薄膜処理装置および薄膜処理方法
US6159653A (en) *	1998-04-14	2000-12-12	Arch Specialty Chemicals, Inc.	Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
US6174651B1 (en) *	1999-01-14	2001-01-16	Steag Rtp Systems, Inc.	Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6177238B1 (en) *	1999-06-04	2001-01-23	Xerox Corporation	Ink jet printheads containing arylene ether alcohol polymers and processes for their formation
JP2001068490A (ja) *	1999-08-27	2001-03-16	Sony Corp	回転塗布装置および回転塗布方法

1999
- 1999-04-08 KR KR10-1999-0012383A patent/KR100367502B1/ko not_active IP Right Cessation
2000
- 2000-03-01 TW TW089103557A patent/TWI274966B/zh not_active IP Right Cessation
- 2000-03-10 US US09/524,024 patent/US6403287B1/en not_active Expired - Lifetime
- 2000-04-10 JP JP2000108608A patent/JP3883777B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR20000065754A (ko)	2000-11-15
JP2000311854A (ja)	2000-11-07
US6403287B1 (en)	2002-06-11
KR100367502B1 (ko)	2003-01-10
TWI274966B (en)	2007-03-01

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2006-09-09	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060908
2006-11-02	TRDD	Decision of grant or rejection written
2006-11-08	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20061107
2006-11-24	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20061115
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