JP3766085B2 - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
- Publication number
- JP3766085B2 JP3766085B2 JP2003382954A JP2003382954A JP3766085B2 JP 3766085 B2 JP3766085 B2 JP 3766085B2 JP 2003382954 A JP2003382954 A JP 2003382954A JP 2003382954 A JP2003382954 A JP 2003382954A JP 3766085 B2 JP3766085 B2 JP 3766085B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- layer
- cleavage plane
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
やSi3 N4 などの保護膜を第2導電型半導体層4表面全面に設けて行ってもよいし、保護膜を設けることなく行っても良い。また、アニール条件も適宜活性化できるような必要な条件で行えばよい。なお、アニール以外の方法で活性化させてもよいし、特に活性化させる必要がない場合には省略することも可能である。
などの不純物原料ガスとして反応ガス内に混入すれば得られる。p型にするためには、MgやZnをEtCp2 MgやDMZnの有機金属ガスとして原料ガスに混入する。ただしn型の場合は不純物を混入しなくても、成膜時にNが蒸発し易く自然にn型になるため、その性質を利用してもよい。
の混合ガスの雰囲気の下で反応性イオンエッチングなどのドライエッチングなどを行うことにより得られる。
4 活性層
5 金属部
6 共振器端面
9 半導体積層部
Claims (4)
- 基板と、該基板上に設けられ該基板の劈開面と平行でない劈開面を有する材料からなり、活性層を含む半導体積層部と、
前記半導体積層部の劈開面である共振器端面に、前記基板と前記活性層との間で前記基板から離間した位置に設けられた金属部とを有しており、金属部が共振器方向において共振器端面からその近傍のみに設けられている半導体レーザ。 - 基板と、該基板上に設けられ該基板の劈開面と平行でない劈開面を有する材料からなり、活性層を含む半導体積層部と、
前記活性層を超えるように前記半導体積層部をメサエッチングして露出されたコンタクト面よりも前記活性層側に設けられた金属部とを有しており、
前記金属部が、前記半導体積層部の劈開面である共振器端面に、前記活性層と平行方向に前記共振器端面を横断するように、かつ共振器方向において共振器端面からその近傍のみに、設けられている半導体レーザ。 - 前記金属部が半導体積層部を構成する原子を含む請求項1または2に記載の半導体レーザ。
- 前記金属部が、前記半導体積層部をレーザにて溶融することによって設けられた、請求項3記載の半導体レーザ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382954A JP3766085B2 (ja) | 2003-11-12 | 2003-11-12 | 半導体レーザ |
US10/578,477 US20070131939A1 (en) | 2003-11-12 | 2004-11-12 | Semiconductor laser and method for manufacturing the same |
KR1020067009189A KR20060114696A (ko) | 2003-11-12 | 2004-11-12 | 반도체 레이저 및 그 제법 |
CNA2004800332016A CN1879267A (zh) | 2003-11-12 | 2004-11-12 | 半导体激光器及其制法 |
PCT/JP2004/016872 WO2005048420A1 (ja) | 2003-11-12 | 2004-11-12 | 半導体レーザ及びその製法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382954A JP3766085B2 (ja) | 2003-11-12 | 2003-11-12 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005150255A JP2005150255A (ja) | 2005-06-09 |
JP3766085B2 true JP3766085B2 (ja) | 2006-04-12 |
Family
ID=34587272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003382954A Expired - Fee Related JP3766085B2 (ja) | 2003-11-12 | 2003-11-12 | 半導体レーザ |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070131939A1 (ja) |
JP (1) | JP3766085B2 (ja) |
KR (1) | KR20060114696A (ja) |
CN (1) | CN1879267A (ja) |
WO (1) | WO2005048420A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4845790B2 (ja) | 2007-03-30 | 2011-12-28 | 三洋電機株式会社 | 半導体レーザ素子およびその製造方法 |
JP2009032970A (ja) * | 2007-07-27 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
US20200357698A1 (en) * | 2018-03-29 | 2020-11-12 | Mitsubishi Electric Corporation | Semiconductor device production method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555403B1 (en) * | 1997-07-30 | 2003-04-29 | Fujitsu Limited | Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
JP2000244068A (ja) * | 1998-12-22 | 2000-09-08 | Pioneer Electronic Corp | 窒化物半導体レーザ及びその製造方法 |
EP1104031B1 (en) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
JP2001284732A (ja) * | 2000-03-31 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法 |
US6765232B2 (en) * | 2001-03-27 | 2004-07-20 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
-
2003
- 2003-11-12 JP JP2003382954A patent/JP3766085B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-12 US US10/578,477 patent/US20070131939A1/en not_active Abandoned
- 2004-11-12 KR KR1020067009189A patent/KR20060114696A/ko not_active Application Discontinuation
- 2004-11-12 CN CNA2004800332016A patent/CN1879267A/zh active Pending
- 2004-11-12 WO PCT/JP2004/016872 patent/WO2005048420A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20070131939A1 (en) | 2007-06-14 |
WO2005048420A1 (ja) | 2005-05-26 |
CN1879267A (zh) | 2006-12-13 |
KR20060114696A (ko) | 2006-11-07 |
JP2005150255A (ja) | 2005-06-09 |
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