JP3482969B2 - Continuous vacuum deposition equipment - Google Patents
Continuous vacuum deposition equipmentInfo
- Publication number
- JP3482969B2 JP3482969B2 JP00637593A JP637593A JP3482969B2 JP 3482969 B2 JP3482969 B2 JP 3482969B2 JP 00637593 A JP00637593 A JP 00637593A JP 637593 A JP637593 A JP 637593A JP 3482969 B2 JP3482969 B2 JP 3482969B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- evaporation
- vapor deposition
- divided
- split
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、連続真空蒸着装置に係
わり、更に詳しくは、真空中で鋼板などの連続基板にル
ツボから蒸発させた材料を蒸着させる連続真空蒸着装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous vacuum deposition apparatus, and more particularly to a continuous vacuum deposition apparatus for depositing a material evaporated from a crucible on a continuous substrate such as a steel plate in vacuum.
【０００２】[0002]
【従来の技術】従来の連続真空蒸着装置は、例えば、特
開昭６２−７０５７６号公報に開示されている。かかる
従来の装置は、図５に側面部（Ａ）と平面図（Ｂ）を示
すように、真空チャンバー内１に設けたルツボ３に蒸発
材料６を入れ、これに電子銃４より電子ビーム５を照射
して、蒸発材料６を溶融・蒸発（あるいは昇華）させ、
連続的にガイドロール９を介して供給される鋼板などの
蒸着基板２に蒸発材料６を蒸着するようになっている。
真空チャンバー１内は真空排気装置（図示せず）により
１０―３〜１０―５ｔｏｒｒに維持されている。上記公
報に記載されているように、蒸着基板２上の膜圧分布を
より均一にするために、ルツボ３の幅は、通常、蒸着基
板２の幅よりもやや広くしてある。また、図５におい
て、電子銃４からほぼ水平に出された電子ビーム５は、
ルツボ３の上方近傍に設けられた偏向磁場（図示せず）
により、ほぼ９０°に曲げられ、ルツボ３に照射するよ
うになっている。なお、イオンプレーティング装置の場
合は、上記と同様の構成であるが、イオン化プルーブ、
高周波アンテナ等（図示せず）により加速した電子を蒸
発流７に衝突させて蒸発流（の一部）を正にイオン化
し、負のバイアス電圧を印加した蒸着基板に成膜させる
ようになっている。鋼板などの蒸着基板２の幅は生産工
程では順次変更する必要がある。例えば、幅広の蒸着基
板から幅狭の基板へ、あるいは、その逆に順次変えるこ
とが、頻繁に要望される。かかる場合に、従来の装置及
び方法では、蒸着を効率良く行うために、例えば図６に
示すように、対応する所定の幅を持ったルツボ３にその
都度交換する必要があった。この場合、その都度、真空
チャンバー１の真空を破り大気に戻す必要があり、また
ルツボ３の交換後に再度真空引きが必要となる問題点が
あった。この結果、ルツボ交換作業と合わせ、時間、エ
ネルギー、及び労力の多大な浪費となり、かつ、この
間、運転（蒸着）が停止してしまい、生産性が大幅に低
下する問題点があった。また、図５に示すように、通
常、蒸着装置の真空チャンバー１の上流側および下流側
にも各々の別の真空チャンバー１１、１２があり、これ
らの真空チャンバー１１、１２は蒸着基板２の通過部を
介してつながっているため、蒸着部の真空チャンバー１
の真空を破り、大気に戻す場合は、蒸着部の上流側及び
下流側の真空チャンバー１も大気に戻ることになり、時
間とエネルギーと労力の浪費はより一層大きなものとな
る問題点があった。これらの問題点を回避するために、
例えば図７に示すように最大蒸着基板幅に対応したルツ
ボ（従って、最も幅広のルツボとなる）を蒸着基板の幅
が小さい場合にもそのまま使用することが提案され一部
で行われていた。しかし、この場合、蒸着基板２の幅よ
りやや広い範囲だけに電子ビーム５を照射するが、蒸発
材料６内の熱伝導により必要な範囲以上にルツボ３が加
熱されてしまう問題点があった。すなわち、図に示すよ
うに、電子ビーム５が直接照射されている部分（右下が
りの斜線部分）と、電子ビーム５は照射されていない
が、電子ビーム５が直接照射されている部分からの伝熱
により溶融している部分（左下がりの斜線部分）と、電
子ビーム５を照射されている部分からの伝熱により加熱
されている部分（点々で示す部分）の３つの部分が形成
され、この結果、熱損失が増加し、効率が低下し、十分
な蒸着速度を得るには電子銃４から余分な電子ビーム５
を放射する必要がありランニングコストが大幅に増加す
る問題点があった。また、ルツボ３の高温域が広がるた
め、広範囲から蒸発が起こり、蒸発材料の歩留りが低下
する問題点があった。また、この場合にルツボ３の中央
部と両端部では大きな温度差が付き、熱膨張量の違いに
よりルツボ３に大きな熱応力が発生し、クラックや破断
をもたらすことがあり、操業上の不安定要因となる問題
点があった。更に、ルツボ３の中央部は常に加熱される
ため損耗が最も激しいが、交換時には全体を丸ごと交換
する必要があり、交換作業が大変であると共に、費用が
かかる問題点があった。また、中央部以外のルツボ本体
も不必要な範囲まで加熱されるため、損耗する割合が増
え、全体として寿命が短くなる問題点があった。上述し
た種々の問題点を解決するために、従来から図１に示す
分割ルツボ１３が用いられてきた。2. Description of the Related Art A conventional continuous vacuum vapor deposition apparatus is disclosed, for example, in Japanese Patent Laid-Open No. 62-70576. In such a conventional apparatus, as shown in a side view (A) and a plan view (B) in FIG. 5, an evaporation material 6 is put in a crucible 3 provided in a vacuum chamber 1, and an electron beam 5 is emitted from an electron gun 4 into the evaporation material 6. Is irradiated to melt and evaporate (or sublimate) the evaporation material 6,
The evaporation material 6 is vapor-deposited on the vapor deposition substrate 2 such as a steel plate continuously supplied through the guide roll 9.
The inside of the vacuum chamber 1 is maintained at 10-3 to 10-5 torr by a vacuum exhaust device (not shown). As described in the above publication, the width of the crucible 3 is usually made slightly wider than the width of the vapor deposition substrate 2 in order to make the film pressure distribution on the vapor deposition substrate 2 more uniform. Further, in FIG. 5, the electron beam 5 emitted from the electron gun 4 in a substantially horizontal direction is
A deflection magnetic field (not shown) provided near the upper part of the crucible 3.
Thus, the crucible 3 is bent at about 90 ° and is irradiated. In the case of an ion plating device, the structure is the same as the above, but an ionization probe,
Electrons accelerated by a high-frequency antenna or the like (not shown) collide with the evaporation flow 7 to positively ionize the evaporation flow (a part thereof), and form a film on a vapor deposition substrate to which a negative bias voltage is applied. There is. The width of the vapor deposition substrate 2 such as a steel plate needs to be sequentially changed in the production process. For example, it is frequently desired to sequentially change from a wide vapor deposition substrate to a narrow substrate or vice versa. In such a case, in the conventional apparatus and method, in order to efficiently perform vapor deposition, it was necessary to replace the crucible 3 with a corresponding predetermined width each time as shown in FIG. 6, for example. In this case, it is necessary to break the vacuum of the vacuum chamber 1 and return it to the atmosphere each time, and there is a problem that the vacuuming is required again after the replacement of the crucible 3 . As a result, there is a problem that a great amount of time, energy, and labor are wasted in addition to the crucible replacement work, and the operation (vapor deposition) is stopped during this period, resulting in a significant decrease in productivity. Further, as shown in FIG. 5, normally, there is another vacuum chamber 11, 12 of the upstream and respectively in downstream vacuum chamber 1 of the deposition apparatus, these vacuum chambers 11 and 12 of the vapor deposition substrate 2 Since it is connected through the passage, the vacuum chamber 1 of the vapor deposition section
When the vacuum of 1 is broken and returned to the atmosphere, the vacuum chambers 1 on the upstream side and the downstream side of the vapor deposition section also return to the atmosphere, and there is a problem that the waste of time, energy and labor is further increased. . In order to avoid these problems,
For example, as shown in FIG. 7, it has been proposed and partially used to use a crucible corresponding to the maximum vapor deposition substrate width (hence the crucible having the widest width) as it is even when the vapor deposition substrate has a small width. However, in this case, although the electron beam 5 is irradiated only in a range slightly wider than the width of the vapor deposition substrate 2, there is a problem that the heat conduction in the evaporation material 6 causes the crucible 3 to be heated beyond a necessary range. That is, as shown in FIG., The portion where the electron beam 5 is irradiated directly (hatched portion of the right edge), the electron beam 5 is not irradiated, heat from the portion where the electron beam 5 is irradiated directly Three parts are formed: a part that is melted by heat (diagonally shaded part to the left) and a part that is heated by heat transfer from the part that is being irradiated with the electron beam 5 (parts shown by dots). As a result, the heat loss is increased, the efficiency is decreased, and the extra electron beam 5 is emitted from the electron gun 4 to obtain a sufficient deposition rate.
However, there is a problem that the running cost is significantly increased. Moreover, since the high temperature region of the crucible 3 is widened, evaporation occurs from a wide range, and there is a problem that the yield of the evaporation material decreases. In this case marked with a large temperature difference at the central portion of the crucible 3 and the both end portions, a large thermal stress on the crucible 3 by a difference of thermal expansion amount is generated, it may lead to cracks and breakage, operation on the unstable There was a problem that became a factor. Further, since the central portion of the crucible 3 is constantly heated, it is most worn. However, it is necessary to replace the whole crucible at the time of replacement, and the replacement work is difficult and costly. Further, since the crucible body other than the central portion is also heated to an unnecessary range, there is a problem that the rate of wear increases and the life as a whole is shortened. In order to solve the various problems described above, the split crucible 13 shown in FIG. 1 has been conventionally used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、分割ル
ツボ１３と隣の分割ルツボ１３の間は、蒸発材料６がな
く、蒸発しないため、境界部の影響を受け膜圧分布が均
一化できないといった問題があった。However, since there is no evaporation material 6 between the divided crucible 13 and the adjacent divided crucible 13 , there is a problem that the film pressure distribution cannot be made uniform due to the influence of the boundary portion. there were.
【０００４】[0004]
【課題を解決するための手段】本発明によれば、真空中
で、電子銃によりルツボから蒸発材料を蒸発又は昇華さ
せ、連続的に供給される蒸着基板の表面に蒸着膜を形成
する連続真空蒸着装置において、前記ルツボは複数の独
立な分割ルツボからなり、各分割ルツボの境界部は密接
して配置され、分割ルツボの隣接する境界線は蒸着基板
の走行方向に対して斜めに設けられ、前記電子銃は前記
分割ルツボ内の蒸発材料の蒸発量をそれぞれ任意に調節
できる制御部をもち、該制御部は、前記電子銃が供給さ
れる蒸着基板の幅に対応させて前記分割ルツボに電子ビ
ームを照射する制御を行う、ことを特徴とする連続真空
蒸着装置が提供される。また、好ましくは、前記ルツボ
は、少なくとも１つ以上の分割ルツボからなる中央部
と、該中央部の両側にそれぞれ少なくとも１つずつ配置
された分割ルツボからなる両端部とから構成され、前記
制御部は、前記電子銃が前記分割ルツボのうち両端部に
配置された分割ルツボ内の蒸発材料の蒸発量を中央部に
配置された分割ルツボ内の蒸発材料の蒸発量より多くす
るように電子ビームを照射する制御と、前記電子銃が前
記分割ルツボのうち中央部に配置された各分割ルツボ内
のそれぞれの両端部に位置する蒸発材料の蒸発量を当該
各分割ルツボ内のそれぞれの中央部に位置する蒸発材料
の蒸発量より多くするように電子ビームを照射する制御
を行う。 According to the present invention, in a vacuum
The evaporation material is evaporated or sublimated from the crucible with an electron gun.
In a continuous vacuum vapor deposition apparatus for forming a vapor deposition film on the surface of a vapor deposition substrate that is continuously supplied, the crucible has a plurality of independent crucibles.
The dividing crucible is composed of vertical dividing crucibles, the boundary portions of the dividing crucibles are closely arranged, and adjacent dividing lines of the dividing crucible are provided obliquely to the traveling direction of the vapor deposition substrate, and the electron gun is
Each of the divided crucibles has a control unit that can arbitrarily adjust the evaporation amount of the evaporation material , and the control unit is supplied by the electron gun.
There is provided a continuous vacuum vapor deposition apparatus characterized in that the divided crucible is controlled to be irradiated with an electron beam according to the width of the vapor deposition substrate . Also, preferably, the crucible
Is a central part consisting of at least one split crucible
And at least one on each side of the center
And both ends of the divided crucible,
The control unit controls the evaporation amount of the evaporation material in the divided crucibles in which the electron gun is arranged at both ends of the divided crucible to the central portion.
More than the amount of evaporation of the evaporation material in the divided crucibles arranged.
Control to irradiate the electron beam so that the electron gun
Within each split crucible located in the center of the split crucible
The evaporation amount of the evaporation material located at each end of
Evaporation material located in the center of each split crucible
Control to irradiate electron beam so that the amount of evaporation is larger than that of
I do.
【０００５】[0005]
【作用】上記本発明の構成によれば、分割ルツボと分割
ルツボの間の境界部の影響が緩和され、蒸着基板上の膜
厚分布を一定範囲内に入るように制御することができ
る。また、この構成では、分割ルツボの端部の蒸発量を
少し多くするだけで、分割ルツボ間の蒸発材料がなく蒸
発（昇華）がない部分の膜厚への影響をほとんどなくす
ことができるため、蒸着基板上の膜厚分布の均一化に対
応することができる。According to the above-mentioned structure of the present invention, the influence of the boundary between the divided crucibles can be mitigated, and the film thickness distribution on the vapor deposition substrate can be controlled to fall within a certain range. Further, in this configuration, by only slightly increasing the amount of evaporation at the end of the split crucible, it is possible to almost eliminate the effect on the film thickness of the part without vaporization material between the split crucible and without evaporation (sublimation), The film thickness distribution on the vapor deposition substrate can be made uniform.
【０００６】[0006]
【実施例】以下、本発明の好ましい実施例を図面を参照
して説明する。図４は、本発明による連続真空蒸着装置
の部分平面図である。この図において、本発明による連
続真空蒸着装置は、真空中で、電子銃４によりルツボ１
０から蒸発材料６を蒸発又は昇華させ、連続的に供給さ
れる蒸着基板２の表面に蒸着膜を形成するようになって
いる。ルツボ１０は、その全体幅が前記蒸着基板２の最
大幅より広く、かつ複数の独立な分割ルツボ１４からな
り、各分割ルツボ１４は密接して配置されている。ま
た、電子銃４は、照射される電子ビーム５を分割ルツボ
１４のいずれにも任意に照射でき、各分割ルツボ１４か
らの蒸発材料の蒸発量を電子ビーム５により任意に調整
できる制御部を有している。この制御部は、電子銃４が
供給される蒸着基板２の幅に対応させて分割ルツボ１４
に電子ビーム５を照射する制御を行う。さらに、図４に
示すように、分割ルツボ１４の隣接する境界線を、蒸発
基板２の走行方向に対し傾斜して設けている。同図で
は、平行四辺形、台形、長方形のルツボを組合せて様々
な範囲としている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. FIG. 4 is a partial plan view of the continuous vacuum deposition apparatus according to the present invention. In this figure, the continuous vacuum vapor deposition apparatus according to the present invention shows that the crucible 1 is moved by an electron gun 4 in vacuum.
The evaporation material 6 is evaporated or sublimated from 0 to form a vapor deposition film on the surface of the vapor deposition substrate 2 which is continuously supplied. The crucible 10 has an overall width wider than the maximum width of the vapor deposition substrate 2 and is composed of a plurality of independent divided crucibles 14 , and the divided crucibles 14 are closely arranged. The electron gun 4 is divided crucible electron beam 5 to be irradiated
It has a control unit that can arbitrarily irradiate any of 14 and can adjust the evaporation amount of the evaporation material from each divided crucible 14 by the electron beam 5. This control unit uses the electron gun 4
Dividing crucible 14 corresponding to the width of vapor deposition substrate 2 supplied.
The control of irradiating the electron beam 5 is performed. Further, as shown in FIG. 4, adjacent dividing lines of the crucible 14 are provided so as to be inclined with respect to the traveling direction of the evaporation substrate 2 . In the figure, the parallelogram, trapezoid, and rectangular crucibles are combined into various ranges.
【０００７】また、本実施形態では図２に示すように、
ある分割ルツボ１４と隣の分割ルツボ１４の間は、蒸発
材料６がなく、蒸発しないため、制御部により、電子銃
４が分割ルツボのうち中央部に配置された分割ルツボ１
４内のそれぞれの両端部に位置する蒸発材料６の蒸発量
を図２（Ｂ）に示すように当該各分割ルツボ内のそれぞ
れの中央部に位置する蒸発材料６の蒸発量より多くする
ように電子ビームを照射する制御を行うのがよい。これ
により、境界部の影響を受けることなく、蒸着基板２全
体にほぼ均一に蒸着することができる。この調整は、ル
ツボ上にスキャンニングしている電子ビーム５の照射ピ
ッチを小さくしたり、ビームの滞在時間を多くすること
によって行うことができる。また、制御部により、電子
銃４が両端部に配置された分割ルツボ１４（図２（Ａ）
の丸付き数字１、２、８、９）内の蒸発材料６の蒸発量
を中央部に配置された分割ルツボ１４内の蒸発材料６の
蒸発量より多くするように電子ビームを照射する制御を
行うのがよい。このように分割ルツボ１４からの蒸発材
料６の蒸発量を調整することによって、蒸着基板上の膜
厚分布（図２（Ｃ））を一定範囲内に入るように制御す
ることができる。Further, in this embodiment, as shown in FIG.
Since there is no evaporation material 6 between a certain divided crucible 14 and an adjacent divided crucible 14 , no vaporization material 6 is generated.
4 is a crucible divided in the center of the crucible 1
As shown in FIG. 2B , the evaporation amount of the evaporation material 6 located at each end of each of the divided crucibles 4 is shown in each divided crucible.
Increase the amount of evaporation of the evaporation material 6 located in the center
It is preferable to control the irradiation of the electron beam . Thereby, the vapor deposition substrate 2 can be vapor-deposited substantially uniformly without being affected by the boundary portion. This adjustment can be performed by reducing the irradiation pitch of the electron beam 5 scanning the crucible or increasing the staying time of the beam. In addition, the control unit
Split crucible 14 guns 4 are disposed at both ends (see FIG. 2 (A)
Of the evaporation material 6 in the circled numbers 1, 2, 8, 9 ) of the evaporation material 6 in the divided crucible 14 arranged in the central portion .
The control for irradiating an electron beam to more than the amount of evaporation
Good to do . Thus, the evaporation material from the split crucible 14
By adjusting the evaporation amount of the material 6, the film thickness distribution (FIG. 2C) on the vapor deposition substrate can be controlled to fall within a certain range.
【０００８】なお、図３のように、蒸着基板２の幅が最
小の場合は（予定幅の中で最小）は、分割ルツボ１４の
うち中央部（丸付き数字５）のみに電子ビーム５を照射
・蒸発（昇華）させる。この場合も図２と同様に、分割
ルツボ１４内の両端部に位置する蒸発材料の蒸発量を中
央部に位置する蒸発材料の蒸発量よりやや多くすること
によって、蒸着基板上の膜厚分布を均一にできる。As shown in FIG. 3, when the width of the vapor deposition substrate 2 is the smallest (smallest among the planned widths ) , the electron beam 5 is applied only to the central portion (circled numeral 5) of the divided crucible 14. Irradiate and evaporate (sublimate). Similar to FIG. 2 again, the middle of the evaporation amount of the evaporation material located at both ends of the split crucible 14
By slightly increasing the evaporation amount of the evaporation material located in the central portion, the film thickness distribution on the vapor deposition substrate can be made uniform.
【０００９】上述したように、本発明の構成によれば、
分割ルツボを用いた場合においても、分割ルツボ間の境
界部の影響が緩和され、蒸着基板上の膜厚分布を一定範
囲内に入るように制御することができる。また、この構
成では、分割ルツボの端部の蒸発量を少し多くするだけ
で蒸着基板上の膜厚分布の均一化に対応することができ
る。As described above, according to the configuration of the present invention,
Even when the divided crucibles are used, the influence of the boundary between the divided crucibles is alleviated, and the film thickness distribution on the vapor deposition substrate can be controlled to fall within a certain range. Further, with this configuration, it is possible to deal with uniform film thickness distribution on the vapor deposition substrate by only slightly increasing the amount of evaporation at the end of the split crucible.
【００１０】[0010]
【発明の効果】上述したように本発明によれば、以下の
効果を得ることができる。（１）
図４のように斜めのルツボ構成とすることによ
り、分割ルツボと分割ルツボの間の蒸発材料がなく蒸発
（昇華）がない部分の膜厚への影響をほとんどなくすこ
とができる。（２）
図２および図３に示す様に、分割ルツボ内の端部
の蒸発量を中央部よりやや多くすることによって、蒸着
基板上の膜厚分布を均一にできる。As described above, according to the present invention, the following effects can be obtained. (1) With the slanting crucible structure as shown in FIG. 4, it is possible to almost eliminate the influence on the film thickness of the portion where there is no evaporation material between the divided crucibles and there is no evaporation (sublimation). (2) As shown in FIGS. 2 and 3, by slightly increasing the evaporation amount at the end portion in the divided crucible compared to the central portion, the film thickness distribution on the vapor deposition substrate can be made uniform.
【００１１】従って、本発明によれば、ルツボを分割し
たにもかかわらず、ルツボ間の蒸発（昇華）がない部分
への膜厚への影響をほとんどなくすことができる。Therefore, according to the present invention, even though the crucible is divided, it is possible to almost eliminate the influence on the film thickness in the portion where there is no evaporation (sublimation) between the crucibles.
【図１】従来の分割ルツボを用いた連続真空蒸着装置を
示す部分平面図である。FIG. 1 is a partial plan view showing a continuous vacuum vapor deposition apparatus using a conventional split crucible.
【図２】本発明による連続真空蒸着装置により蒸着する
場合の、各分割ルツボからの設定蒸発量及び蒸着基板上
の膜厚分布の一例である。FIG. 2 is an example of a set evaporation amount from each divided crucible and a film thickness distribution on a vapor deposition substrate when vapor deposition is performed by the continuous vacuum vapor deposition apparatus according to the present invention.
【図３】図２と同様の別の図である。FIG. 3 is another view similar to FIG.
【図４】本発明に係る連続真空蒸着装置の分割ルツボの
構成例を示す平面図である。FIG. 4 is a plan view showing a configuration example of a divided crucible of the continuous vacuum vapor deposition device according to the present invention .
【図５】従来の蒸着装置の全体構成図である。FIG. 5 is an overall configuration diagram of a conventional vapor deposition device.
【図６】蒸着基板幅に対応してルツボを変える場合を示
す従来例である。FIG. 6 is a conventional example showing a case where the crucible is changed in accordance with the width of a vapor deposition substrate.
【図７】ルツボは変えずに電子ビームの照射範囲を変え
て蒸着基板幅の変化に対応する場合の従来例である。FIG. 7 shows a conventional example in which the irradiation range of the electron beam is changed without changing the crucible to cope with the change in the width of the vapor deposition substrate.
１真空チャンバー ２蒸着基板 ３ルツボ ４電子銃 ５ 電子ビーム ６ 蒸発材料 ７ 蒸発流 ８ 真空排気 ９ ガイドロール １０ ルツボ １１、１２ 真空チャンバー １３ 分割ルツボ１４ 分割ルツボ DESCRIPTION OF SYMBOLS 1 vacuum chamber 2 vapor deposition substrate 3 crucible 4 electron gun 5 electron beam 6 evaporation material 7 evaporation flow 8 vacuum exhaust 9 guide rolls 10 crucibles 11 and 12 vacuum chamber 13 split crucible 14 split crucible
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/56 C23C 14/30 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) C23C 14/56 C23C 14/30
Claims (2)
材料を蒸発又は昇華させ、連続的に供給される蒸着基板
の表面に蒸着膜を形成する連続真空蒸着装置において、 前記ルツボは複数の独立な分割ルツボからなり、 各 分割ルツボの境界部は密接して配置され、分割 ルツボの隣接する境界線は蒸着基板の走行方向に対
して斜めに設けられ、 前記電子銃は前記分割ルツボ内の蒸発材料の蒸発量をそ
れぞれ任意に調節できる制御部をもち、該制御部は、前記電子銃が供給される蒸着基板の幅に対
応させて 前記分割ルツボに電子ビームを照射する制御を
行う、ことを特徴とする連続真空蒸着装置。1. Evaporating from a crucible with an electron gun in a vacuum
In a continuous vacuum vapor deposition apparatus that evaporates or sublimes a material and forms a vapor deposition film on the surface of a vapor deposition substrate that is continuously supplied, the crucible is composed of a plurality of independent divided crucibles, and the boundary portion of each divided crucible is closely contacted. disposed Te, adjacent boundary lines of division crucible is provided obliquely with respect to the running direction of the deposition substrate, the electron gun its evaporation amount of the evaporation material of the divided crucible
Each has a control unit that can be adjusted as desired, and the control unit corresponds to the width of the vapor deposition substrate to which the electron gun is supplied.
The split crucible by response control for irradiating an electron beam
A continuous vacuum vapor deposition apparatus characterized by performing .
割ルツボからなる中央部と、該中央部の両側にそれぞれ
少なくとも１つずつ配置された分割ルツボからなる両端
部とから構成され、 前記制御部は、前記電子銃が前記分割ルツボのうち 両端
部に配置された分割ルツボ内の蒸発材料の蒸発量を中央
部に配置された分割ルツボ内の蒸発材料の蒸発量より多
くするように電子ビームを照射する制御と、前記電子銃
が前記分割ルツボのうち中央部に配置された各分割ルツ
ボ内のそれぞれの両端部に位置する蒸発材料の蒸発量を
当該各分割ルツボ内のそれぞれの中央部に位置する蒸発
材料の蒸発量より多くするように電子ビームを照射する
制御を行う、ことを特徴とする請求項１に記載の連続真
空蒸着装置。2. The crucible comprises at least one crucible.
A central part consisting of split crucibles and on both sides of the central part
Both ends consisting of split crucibles with at least one each
Is composed of a part, the control unit, the central evaporation of the evaporation material of the electron gun in a split crucible disposed at both ends of the divided crucible
More than the evaporation amount of the evaporation material in the divided crucible
A control for irradiating an electron beam onto Kusuru so, the electron gun
Is a divided crucible arranged in the center of the divided crucible
The evaporation amount of the evaporation material located at each end of each
Evaporation located in the center of each divided crucible
Irradiate with an electron beam so that the amount of evaporation is greater than that of the material
The continuous vacuum vapor deposition apparatus according to claim 1, which is controlled .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00637593A JP3482969B2 (en) | 1993-01-19 | 1993-01-19 | Continuous vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00637593A JP3482969B2 (en) | 1993-01-19 | 1993-01-19 | Continuous vacuum deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06212425A JPH06212425A (en) | 1994-08-02 |
| JP3482969B2 true JP3482969B2 (en) | 2004-01-06 |
Family
ID=11636637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00637593A Expired - Fee Related JP3482969B2 (en) | 1993-01-19 | 1993-01-19 | Continuous vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3482969B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
| JP4704605B2 (en) | 2001-05-23 | 2011-06-15 | 淳二 城戸 | Continuous vapor deposition apparatus, vapor deposition apparatus and vapor deposition method |
| SG113448A1 (en) | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
| DE102006056984A1 (en) * | 2006-11-30 | 2008-06-05 | Leybold Optics Gmbh | Running coating |
| JP6586216B1 (en) * | 2018-11-22 | 2019-10-02 | 長州産業株式会社 | Vapor deposition apparatus and vapor deposition method |
-
1993
- 1993-01-19 JP JP00637593A patent/JP3482969B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06212425A (en) | 1994-08-02 |
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