JP3354716B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

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Publication number
JP3354716B2
JP3354716B2 JP15734694A JP15734694A JP3354716B2 JP 3354716 B2 JP3354716 B2 JP 3354716B2 JP 15734694 A JP15734694 A JP 15734694A JP 15734694 A JP15734694 A JP 15734694A JP 3354716 B2 JP3354716 B2 JP 3354716B2
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Japan
Prior art keywords
bonding
silicon
integrated circuit
circuit device
liquid material
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Expired - Fee Related
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JP15734694A
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English (en)
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JPH0823007A (ja
Inventor
睦実 佐々木
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日本プレシジョン・サーキッツ株式会社
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Publication of JPH0823007A publication Critical patent/JPH0823007A/ja
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体集積回路装置の
製造方法に関するものである。
【０００２】
【従来の技術】従来、半導体チップ表面と封止パッケー
ジのモールド材との間の応力緩衝膜としてシリコン系液
材を介在させるものがあった。このようなものでは、図
４に示したように半導体チップ４１の中央にノズル４２
からシリコン系液材を滴下して形成していた。
【０００３】
【発明が解決しようとする課題】しかしながら、上記の
ものではシリコン系液材をチップの中央部分に滴下して
形成するので、シリコン系液材が全てのボンディングパ
ッド部分に十分いきわたらなかった。よって、ボンディ
ングパットのうちシリコン系液材で覆われていない部分
が水分の侵入によって腐食してしまい、半導体集積回路
装置の信頼性が低下してしまうという問題点を有してい
た。
【０００４】本願の発明の目的は、信頼性の向上が可能
な半導体集積回路装置の製造方法を提供することであ
る。
【０００５】
【課題を解決するための手段】本願の半導体集積回路装
置の製造方法に係る発明は、上記ボンディングワイヤの
頂点部分にシリコン系液材を滴下することにより、上記
ボンディングパッドおよび上記ボンディングワイヤの上
記ボンディングパッドとの接続部をシリコン系被膜で全
て被覆するものである。
【０００６】本願の半導体集積回路装置の製造方法に係
る発明は、上記のボンディングワイヤの頂点部分の配列
に応じた形状の部材から、上記ボンディングワイヤの頂
点部分にシリコン系液材を滴下することが望ましい。
【０００７】
【実施例】以下、本願の半導体集積回路装置の製造方法
に係る発明を図面に示す実施例に基づいて説明する。
【０００８】図１において、１は半導体集積回路のチッ
プで、チップ１上に設けてあるボンディングパッド２〜
２にボンディングワイヤ３〜３が接続してある。Ａ，Ｂ
は、対向するボンディングワイヤ３〜３の頂点分部の距
離をそれぞれ示している。４〜４はリードで、それぞれ
ボンディングワイヤ３〜３と接続している。５はノズル
で、各ボンディングワイヤ３〜３の頂点部分にＪＣＲコ
ートからなるシリコン系液材を滴下する。図２は、ノズ
ル５の注入口５ａの形状を示しており、図中Ａ，Ｂの長
さはそれぞれ図１のＡ，Ｂの長さに対応している。すな
わち、ノズル５の注入口５ａは、ボンディングワイヤ３
〜３の頂点部分の配列に応じた形状となっている。よっ
て、注入口５ａから滴下されるシリコン系液材は、各ボ
ンディングワイヤ３〜３の頂点部分に滴下される。この
滴下されたシリコン系液材はそれぞれのボンディングワ
イヤ３〜３を被覆しながらボンディングパッド２〜２に
達して、ボンディングパッド２〜２を被覆する。
【０００９】よって、図３に示したように、ボンディン
グワイヤ３〜３の頂点部分からボンディングパッド２〜
２との接続部までの部分およびボンディングパッド２〜
２がシリコン系被膜６で全て被覆される。同図は図１の
Ｃ−Ｃ線断面のボンディングバッド２が形成してある部
分の拡大図で、同図において、７はシリコン基板、８は
層間絶縁層、９は保護膜である。なお、図１と同一番号
のものは、同一のものとする。
【００１０】このように、ボンディングワイヤ３〜３の
頂点部分にシリコン系液材を滴下するので、ボンディン
グパッド２〜２およびボンディングワイヤ３〜３の頂点
部分からボンディングパッド２〜２との接続部までの部
分がシリコン系被膜６によって被覆され、水分の侵入に
よるボンディングパッド２〜２の腐食を解消でき、半導
体集積回路装置の信頼性が格段に向上する。
【００１１】なお、リード４〜４と接続している側のボ
ンディングワイヤ３〜３に流れるシリコン系液材も、ボ
ンディングワイヤ３〜３を被覆しながらリード４〜４に
達する。
【００１２】シリコン系液材６を滴下するノズル５の注
入口５ａの形状がボンディングワイヤ３〜３の頂点部分
の配列に応じた形状なので、シリコン系液材６を滴下す
る際にノズルとボンディングワイヤ３〜３の頂点との位
置合わせが一度で済み製造工程の簡略化が図れるととも
に、確実に全てのボンディンクワイヤ３〜３の頂点部分
にシリコン系液材６を滴下できる。
【００１３】なお、シリコン系液材６を滴下するノズル
５の形状は、図２に示したものに限らず、ボンディング
ワイヤ３〜３の頂点部分の配列に応じて、適宜変更可能
である。
【００１４】
【発明の効果】本願の半導体集積回路装置の製造方法に
よれば、ボンディングワイヤの頂点部分にシリコン系液
材を滴下することにより、ボンディングパッドおよびボ
ンディングワイヤのボンディングパッドとの接続部をシ
リコン系被膜で全て被覆できるので、信頼性の高い半導
体集積回路装置を製造できる。
【００１５】さらに、ボンディングワイヤの頂点部分の
配列に応じた形状の部材から、ボンディングワイヤの頂
点部分にシリコン系液材を滴下することにより、シリコ
ン系液材を滴下する際にシリコン系液材を滴下する部材
とボンディングワイヤとの位置合わせが一度で済むので
製造工程の簡略化が図れるとともに、確実に全てのボン
ディンクワイヤの頂点部分にシリコン系液材を滴下でき
る。
【図面の簡単な説明】
【図１】本発明の製造工程の一実施例を示した説明図。
【図２】図１の要部詳細図。
【図３】図１の要部断面図。
【図４】従来の半導体集積回路装置の製造工程を示した
説明図。
【符号の説明】
２ ボンディングパット ３ ボンディングワイヤ ５ 部材 ６ シリコン系被膜，シリコン系液材
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−85548（ＪＰ，Ａ) 特開 平４−56840（ＪＰ，Ａ) 特開 平５−121474（ＪＰ，Ａ) 特開 平５−152365（ＪＰ，Ａ) 特開 平６−333970（ＪＰ，Ａ) 特開 平７−86324（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 21/56

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】 ボンディングパッドおよびこのボンディ
    ングパッドに接続されるボンディングワイヤを有する半
    導体集積回路装置の製造方法において、上記ボンディングワイヤの頂点部分にシリコン系液材を
    滴下することにより、 上記ボンディングパッドおよび上
    記ボンディングワイヤの上記ボンディングパッドとの接
    続部をシリコン系被膜で全て被覆する工程を有すること
    を特徴とする半導体集積回路装置の製造方法。
  2. 【請求項２】 ボンディングパッドおよびこのボンディ
    ングパッドに接続されるボンディングワイヤを有する半
    導体集積回路装置の製造方法において、上記のボンディングワイヤの頂点部分の配列に応じた形
    状の部材から、 上記ボンディングワイヤの頂点部分にシ
    リコン系液材を滴下することにより、上記ボンディング
    パッドおよび上記ボンディングワイヤの上記ボンディン
    グパッドとの接続部をシリコン系被膜で全て被覆する工
    程を有することを特徴とする半導体集積回路装置の製造
    方法。
JP15734694A 1994-07-08 1994-07-08 半導体集積回路装置の製造方法 Expired - Fee Related JP3354716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15734694A JP3354716B2 (ja) 1994-07-08 1994-07-08 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15734694A JP3354716B2 (ja) 1994-07-08 1994-07-08 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPH0823007A JPH0823007A (ja) 1996-01-23
JP3354716B2 true JP3354716B2 (ja) 2002-12-09

Family

ID=15647678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15734694A Expired - Fee Related JP3354716B2 (ja) 1994-07-08 1994-07-08 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JP3354716B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201432864A (zh) * 2013-02-01 2014-08-16 Murata Manufacturing Co 半導體裝置

Also Published As

Publication number Publication date
JPH0823007A (ja) 1996-01-23

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