JP3326195B2 - Adhesive tape for fixing semiconductor wafers - Google Patents

Adhesive tape for fixing semiconductor wafers

Info

Publication number
JP3326195B2
JP3326195B2 JP09209492A JP9209492A JP3326195B2 JP 3326195 B2 JP3326195 B2 JP 3326195B2 JP 09209492 A JP09209492 A JP 09209492A JP 9209492 A JP9209492 A JP 9209492A JP 3326195 B2 JP3326195 B2 JP 3326195B2
Authority
JP
Japan
Prior art keywords
sensitive adhesive
pressure
ethylene
radiation
styrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP09209492A
Other languages
Japanese (ja)
Other versions
JPH05125338A (en
Inventor
宏志 中山
憲司 望木
栄二 白松
伸一 石渡
和繁 岩本
守邦 長谷部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP09209492A priority Critical patent/JP3326195B2/en
Priority to MYPI92001221A priority patent/MY111332A/en
Priority to TW081105027A priority patent/TW215453B/zh
Priority to KR1019920011393A priority patent/KR0162103B1/en
Priority to EP92110997A priority patent/EP0520515B1/en
Priority to DE69206331T priority patent/DE69206331T2/en
Publication of JPH05125338A publication Critical patent/JPH05125338A/en
Priority to US08/106,998 priority patent/US5538771A/en
Application granted granted Critical
Publication of JP3326195B2 publication Critical patent/JP3326195B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、各種半導体を製造する
工程において使用する粘着テープに関し、さらに詳しく
いえば、例えばパターンを形成したウエハを一つ一つの
パターン毎に切断し半導体素子として分割する際に使用
する半導体ウエハ固定用の放射線硬化性粘着テープに関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape used in a process for manufacturing various semiconductors. More specifically, for example, a wafer on which a pattern is formed is cut into individual patterns and divided into semiconductor elements. The present invention relates to a radiation-curable pressure-sensitive adhesive tape for fixing a semiconductor wafer used at the time.

【０００２】[0002]

【従来の技術】従来、回路パターンの形成された半導体
ウエハを素子小片に切断分離するダイシング加工を行う
際には、放射線硬化型粘着テープを用いるピックアップ
方式が提案されている。2. Description of the Related Art Conventionally, a pickup method using a radiation-curable pressure-sensitive adhesive tape has been proposed for performing a dicing process for cutting and separating a semiconductor wafer on which a circuit pattern is formed into element pieces.

【０００３】この方式において粘着テープとしては放射
線、例えば紫外線のような光、または電子線のような電
離性放射線を透過する基材フィルムと、この基材フィル
ム上に塗工された放射線照射により硬化する性質を有す
る粘着剤層とからなる半導体ウエハ固定用粘着テープを
用いる。この方式は、粘着テープのダイシング加工時の
素子固定粘着力を強接着力とし、半導体ウエハを素子小
片に切断分離後、基材フィルム側より放射線照射を行い
放射線硬化型粘着層を硬化させて、素子固定粘着力を大
幅に低下させるもので、素子小片の大きさに関係なく、
例えば２５mm2以上の大きな素子であっても容易にピッ
クアップすることができるようにした方式である。この
方式は、放射線透過性の基材フィルム上に放射線硬化性
粘着剤を塗工した半導体ウエハ固定用粘着テープの粘着
層中に含まれる放射線硬化性化合物を放射線照射によっ
て硬化させ粘着剤に三次元網状構造を与えて、その流動
性を著しく低下させる原理に基づくものである。In this method, an adhesive tape is used as a base film that transmits radiation, for example, light such as ultraviolet rays, or ionizing radiation such as an electron beam, and cured by irradiation with radiation applied to the base film. A pressure-sensitive adhesive tape for fixing a semiconductor wafer, comprising a pressure-sensitive adhesive layer having the following properties: In this method, the element fixing adhesive force at the time of dicing processing of the adhesive tape is made to be a strong adhesive force, and after cutting and separating the semiconductor wafer into element pieces, radiation is applied from the base film side to cure the radiation-curable adhesive layer, It significantly reduces the adhesive strength for fixing the element, regardless of the size of the element piece.
For example, even a large element of 25 mm 2 or more can be easily picked up. In this method, a radiation-curable compound contained in the adhesive layer of a semiconductor wafer fixing adhesive tape coated with a radiation-curable adhesive on a radiation-transparent base film is cured by irradiation with radiation, and the adhesive is three-dimensionally formed. It is based on the principle of providing a network structure and significantly reducing its flowability.

【０００４】しかし、このような粘着テープでは放射線
硬化性化合物の硬化反応により粘着剤を硬化させて三次
元網状化構造を与え粘着力を低下させるため、ダイシン
グ加工時に有していた粘着テープのゴム状弾性が硬化後
のピックアップ時には殆ど無くなってしまう結果とな
る。このため、従来行われていた粘着テープの放射状延
伸による素子間隙の拡大が困難になるという問題が生じ
ている。However, in such an adhesive tape, the adhesive is cured by a curing reaction of a radiation-curable compound to give a three-dimensional network structure and reduce the adhesive strength. As a result, the shape elasticity almost disappears at the time of pickup after curing. For this reason, there has been a problem that it is difficult to expand the element gap by the conventional radial stretching of the adhesive tape.

【０００５】この問題を解決するため、すでに軟質ポリ
塩化ビニル（ＰＶＣ）を基材フィルムの中心層とするも
のが実用化されているが、ポリ塩化ビニル樹脂は塩素系
樹脂であり、しかも金属化合物からなる安定剤や可塑剤
を含有しているため、塩素イオン、金属イオン、可塑剤
などが移行して半導体ウエハの表面を汚染する原因とな
ることがあった。[0005] In order to solve this problem, the use of a soft polyvinyl chloride (PVC) as the center layer of the base film has already been put into practical use. In some cases, chlorine ions, metal ions, plasticizers, etc. migrate and cause contamination of the surface of the semiconductor wafer.

【０００６】そこで、特開平２−２１５５２８号に開示
されるように、ゴム状弾性を有する熱可塑性樹脂例え
ば、ポリブテン−１、ポリウレタン、ポリエステルエラ
ストマー、１，２−ポリブタジエン、スチレン−イソプ
レン−スチレン共重合体の水添物、スチレン−エチレン
−ブテン−スチレン共重合体（ＳＥＢＳ）を中心層とす
る積層フィルムを基材フィルムとする粘着テープが提案
された。しかし、これらの粘着テープはいずれも、放射
線照射前の延伸では素子間隙の素子同士の接触を防止す
るに足りるだけの拡大は可能であるが、放射線照射後の
延伸においても画像認識を伴うピックアップ装置にて必
要とされる素子小片の大幅で均一な間隙量をとるには、
基材フィルム自体のネッキング（フィルム延伸時、力の
伝播性不良による部分的な伸びの発生）や放射線照射に
よる基材フィルムの劣化に伴うゴム状弾性の喪失などの
問題を生起し特性として不十分なものであった。Accordingly, as disclosed in JP-A-2-215528, a thermoplastic resin having rubbery elasticity, for example, polybutene-1, polyurethane, polyester elastomer, 1,2-polybutadiene, styrene-isoprene-styrene copolymer. A pressure-sensitive adhesive tape has been proposed in which a laminated film having a central layer of a hydrogenated product of a union, styrene-ethylene-butene-styrene copolymer (SEBS) is used as a base film. However, any of these adhesive tapes can be enlarged enough to prevent contact between the elements in the element gap by stretching before irradiation, but the pickup device with image recognition is also used in stretching after irradiation. In order to obtain a large and uniform gap amount of element pieces required in
Insufficient properties due to problems such as necking of the base film itself (partial elongation due to poor force transmission during film stretching) and loss of rubbery elasticity due to deterioration of the base film due to irradiation It was something.

【０００７】個々に列挙すれば、ポリブテン−１、ポリ
エステルエラストマー、１，２−ポリブタジエンは、ネ
ッキングし易いため素子間隙が大きくできない（ＰＶＣ
並み）、ポリウレタンは、ゴム弾性が大き過ぎて素子間
隙の均一性に欠ける、またスチレン−イソプレン−スチ
レン共重合体の水添物は前記材料のポリマーよりは優れ
た特性を有するものの、ネッキングの問題が解消されず
素子間隙の広がりが不十分である等の欠点があった。ま
た、スチレン−エチレン−ブテン−スチレン共重合体
（ＳＥＢＳ）として特開平２−２１５５２８号では、実
施例において三菱油化（株）製のラバロンが使用されて
いるが、ラバロン系は、分子量１０万以上のＳＥＢＳと
ポリプロピレンまたはエチレン−プロピレン−ジエン共
重合体とのブレンド品であり、相溶化剤が粘着剤層に移
行して粘着力を不安定にしピックアップミスを起こした
り、ウエハを汚染する問題があった。また、ブレンド品
でなくＳＥＢＳのみを中心層に使用した場合スチレン含
有量や分子量によってはネッキングが素子間隙不足、あ
るいは放射線透過性が不良となるといった問題が生じ
た。[0007] When individually enumerated, polybutene-1, polyester elastomer and 1,2-polybutadiene are easily necked, so that the element gap cannot be increased (PVC).
On average), polyurethane has too large a rubber elasticity and lacks uniformity of element gaps. A hydrogenated styrene-isoprene-styrene copolymer has better properties than the polymer of the above material, but has a problem of necking. However, there is a disadvantage that the element gap is not sufficiently widened. Further, in Japanese Patent Application Laid-Open No. 2-215528, Lavalon manufactured by Mitsubishi Yuka Co., Ltd. is used as a styrene-ethylene-butene-styrene copolymer (SEBS). A blend of SEBS and polypropylene or an ethylene-propylene-diene copolymer as described above, in which the compatibilizer migrates to the pressure-sensitive adhesive layer, destabilizes the pressure-sensitive adhesive force, causes a pickup error, and contaminates the wafer. there were. When SEBS alone was used in the center layer instead of the blended product, there was a problem that necking was insufficient in the element gap or radiation transmittance was poor depending on the styrene content and molecular weight.

【０００８】[0008]

【発明が解決しようとする課題】本発明は、上記の問題
点を解決した半導体ウエハ固定用粘着テープを提供する
ことを目的とする。すなわち、本発明は放射線照射前は
半導体ウエハを固定するのに十分な粘着力を有し、素子
固定粘着力の低減が可能であるとともに、放射線照射後
の粘着テープにおいてゴム状弾性（柔軟性）を維持し放
射線照射後の粘着テープ延伸による素子間隙の大幅で、
かつ、均一な拡大を行うことができ、半導体素子を粘着
テープで汚染することのない半導体ウエハ固定用粘着テ
ープを提供するものである。SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer which has solved the above-mentioned problems. That is, the present invention has a sufficient adhesive strength to fix the semiconductor wafer before the radiation irradiation, enables the reduction of the element fixing adhesive force, and the rubbery elasticity (flexibility) in the adhesive tape after the radiation irradiation. The gap between elements is greatly increased by stretching the adhesive tape after irradiation,
Further, an object of the present invention is to provide a semiconductor wafer fixing adhesive tape which can perform uniform enlargement and does not contaminate semiconductor elements with the adhesive tape.

【０００９】[0009]

【課題を解決するための手段】本発明の半導体ウエハ固
定用粘着テープは、 （１）基材フィルムの片面に放射線硬化性粘着剤層を設
けてなる半導体ウエハ固定用粘着テープにおいて、前記
基材フィルムとして中心層に、スチレン重合体ブロック
成分（Ａ）およびエチレン−ブテン共重合体ブロック成
分（Ｂ）を有しかつ前記成分（Ａ）が成分（（Ａ）＋
（Ｂ））の１０〜３０重量％で、重量平均分子量が３５
０００〜９００００であるスチレン−エチレン−ブテン
−スチレンブロック共重合体系フィルムを用い、接着層
を介して又は直接、前記放射線硬化性粘着剤層を設ける
側の表面に粘着剤塗布層、他方側表面に転写防止層を積
層した積層フィルムを用いてなることを特徴とする、及
び （２）基材フィルムの片面に放射線硬化性粘着剤層を設
けてなる半導体ウエハ固定用粘着テープにおいて、前記
基材フィルムとして中心層にスチレン重合体ブロック成
分（Ａ）及びエチレン−ペンテン共重合体ブロック成分
（Ｃ）を有し、かつ前記成分（Ａ）が成分（（Ａ）＋
（Ｃ））の１０〜３０重量％で、重量平均分子量が１５
万〜５０万であるスチレン−エチレン−ペンテン−スチ
レンブロック共重合体系フィルムを用い、接着層を介し
てまたは直接、前記放射線硬化性粘着剤層を設ける側の
表面に粘着剤塗布層、他方側表面に転写防止層を積層し
たフィルムを用いてなることを特徴とするものである。
なお、ここで放射線とは、紫外線のような光線、又は電
子線などの電離性放射線を言う。According to the present invention, there is provided an adhesive tape for fixing a semiconductor wafer, comprising: (1) a pressure-sensitive adhesive tape for fixing a semiconductor wafer, wherein a radiation-curable adhesive layer is provided on one surface of a base film; The film has a styrene polymer block component (A) and an ethylene-butene copolymer block component (B) in a central layer as a film, and the component (A) is a component ( (A) +
(B) 10 to 30% by weight of ) and a weight average molecular weight of 35
Using a styrene-ethylene-butene-styrene block copolymer-based film of 000 to 90000, an adhesive coating layer on the surface on which the radiation-curable pressure-sensitive adhesive layer is provided, or directly on the surface on the other side, via an adhesive layer or (2) A pressure-sensitive adhesive tape for fixing a semiconductor wafer, wherein a radiation-curable pressure-sensitive adhesive layer is provided on one side of a base film, wherein the base film is provided. A styrene polymer block component (A) and an ethylene-pentene copolymer block component (C) in the center layer, and the component (A) is a component ( (A) +
(C) 10 to 30% by weight of ) and a weight average molecular weight of 15
A styrene-ethylene-pentene-styrene block copolymer-based film having a molecular weight of 10,000 to 500,000, and an adhesive coating layer on the surface on which the radiation-curable pressure-sensitive adhesive layer is provided via an adhesive layer or directly. And a film having a transfer prevention layer laminated on the other surface.
Here, the radiation refers to a light beam such as an ultraviolet ray or an ionizing radiation such as an electron beam.

【００１０】本発明におけるスチレン−エチレン−ブテ
ンもしくはペンテン−スチレン系ブロック共重合体とし
ては、スチレン−エチレン−ブテンもしくはペンテン−
スチレンブロック共重合体、上記共重合体に必要に応じ
てカルボキシル基などの官能基を含むマレイン酸などの
低分子を付加又は置換し変性した変性体、上記共重合体
を主成分としこれとポリオレフィンなどの汎用樹脂等従
来公知のものと混合物を本発明の目的とする効果を損な
わない範囲で使用することができる。In the present invention, the styrene-ethylene-butene or pentene-styrene block copolymer may be styrene-ethylene-butene or pentene-styrene.
Styrene block copolymers, modified products obtained by adding or substituting low-molecular compounds such as maleic acid containing a functional group such as a carboxyl group to the above-mentioned copolymers, if necessary, and the above-mentioned copolymers as main components and polyolefins Mixtures with conventionally known resins such as general-purpose resins can be used as long as the effects intended by the present invention are not impaired.

【００１１】上記共重合体は、グラフト共重合体を含む
ことはもちろんであり、上記混合物はいわゆるアロイを
含むことはもちろんである。スチレン重合体ブロック成
分（Ａ）のガラス転位温度は２０℃以上のものが好まし
く、エチレン−ブテン共重合体ブロック成分（Ｂ）又は
エチレン−ペンテン共重合体ブロック成分（Ｃ）のガラ
ス転位温度は−２０℃以下のものが好ましい。The above-mentioned copolymer naturally contains a graft copolymer, and the above-mentioned mixture naturally contains a so-called alloy. The glass transition temperature of the styrene polymer block component (A) is preferably 20 ° C. or higher, and the glass transition temperature of the ethylene-butene copolymer block component (B) or the ethylene-pentene copolymer block component (C) is − Those having a temperature of 20 ° C. or lower are preferred.

【００１２】本発明のスチレン−エチレン−ブテンもし
くはペンテン−スチレン系ブロック共重合体において、
粘着剤を放射線照射によって硬化後、放射状延伸による
素子間隙の拡大を行うにはスチレン重合体ブロック成分
（Ａ）の含有量を１０〜３０重量％の範囲とすることが
必要である。この成分（Ａ）の含有量が１０重量％未満
では該共重合体の性質がポリエチレンに近くなるためネ
ッキングを起こしやすくなって均一延伸することができ
なくなり、素子間隙が広がらない。また３０重量％を越
えると紫外線が透過せず照射後の粘着力が低下しない。
そのためピックアップミスを起こしたり、ウエハを汚染
する。また、ゴム状弾性が低く均一延伸による素子間隙
の増大が困難になる。In the styrene-ethylene-butene or pentene-styrene block copolymer of the present invention,
After the pressure-sensitive adhesive is cured by irradiation with radiation, the content of the styrene polymer block component (A) must be in the range of 10 to 30% by weight in order to expand the element gap by radial stretching. If the content of the component (A) is less than 10% by weight, the properties of the copolymer become close to that of polyethylene, so that necking is apt to occur and uniform stretching cannot be performed, and the element gap does not widen. On the other hand, if it exceeds 30% by weight, the ultraviolet light does not transmit and the adhesive strength after irradiation does not decrease.
For this reason, a pick-up error occurs or the wafer is contaminated. Further, rubber-like elasticity is low, and it becomes difficult to increase the element gap by uniform stretching.

【００１３】また、前記ブロック成分（Ａ）と（Ｂ）の
共重合体の場合、該共重合体の重量平均分子量を３５０
００〜９００００とする。これは３５０００未満では引
張強度が弱く破断のおそれがあり、また９００００を越
えるとフィルム成形性が悪くなり、分子が絡み合って延
伸しにくくなるからである。また、前記ブロック成分
（Ａ）と（Ｃ）の共重合体の場合、該共重合体の重量平
均分子量を１５万〜５０万とする。これは１５万未満で
は引張強度が弱く破断のおそれがあり、また５０万を越
えるとフィルム成形性が悪くなり、分子が絡み合って延
伸しにくくなるからである。In the case of the copolymer of the block components (A) and (B), the weight average molecular weight of the copolymer is 350
00 to 90000. This is because if it is less than 35,000, the tensile strength is weak and there is a risk of breaking, and if it exceeds 90000, the film formability deteriorates, and the molecules become entangled, making it difficult to stretch. In the case of a copolymer of the block components (A) and (C), the weight average molecular weight of the copolymer is 150,000 to 500,000. This is because if it is less than 150,000, the tensile strength is weak and there is a possibility of breaking, and if it exceeds 500,000, the film formability deteriorates and the molecules become entangled and it becomes difficult to stretch.

【００１４】本発明のスチレン−エチレン−ブテンもし
くはペンテン−スチレン共重合体（ＳＥＢＳ又はＳＥＰ
Ｓ）系フィルムに積層するフィルム用の樹脂は放射線透
過性が良好であること以外、特に制限されるものではな
いが柔軟性を有する方が好ましい。例えば、低密度ポリ
エチレン、直鎖低密度ポリエチレン、ポリプロピレン、
エチレン−プロピレン共重合体、エチレン−酢酸ビニル
共重合体、ポリメチルペンテン、エチレン−アクリル酸
エチル共重合体、エチレン−アクリル酸メチル共重合
体、エチレン−アクリル酸共重合体、エチレン−メタク
リル酸メチル共重合体、エチレン−メタアクリル酸エチ
ル共重合体、アイオノマー、エチレン−プロピレン−ジ
エン共重合体などの単独重合体、共重合体等従来公知の
もの、あるいはこれらの混合物、または他の樹脂及びエ
ラストマーとの混合物等が挙げられ基材フィルムの要求
特性、コストなどの諸事情に応じて樹脂の種類、厚み比
率、放射線硬化性粘着層側のフィルムを任意に選択する
ことができる。The styrene-ethylene-butene or pentene-styrene copolymer of the present invention (SEBS or SEP
The resin for the film to be laminated on the S) -based film is not particularly limited except that it has good radiation transmittance, but it is preferable that the resin has flexibility. For example, low density polyethylene, linear low density polyethylene, polypropylene,
Ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, polymethylpentene, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ethylene-methyl methacrylate Copolymers, ethylene-ethyl methacrylate copolymers, ionomers, homopolymers such as ethylene-propylene-diene copolymers, conventionally known polymers such as copolymers, or mixtures thereof, or other resins and elastomers The type of the resin, the thickness ratio, and the film on the radiation-curable pressure-sensitive adhesive layer side can be arbitrarily selected depending on the required characteristics of the base film, cost, and other circumstances.

【００１５】上記共重合体は、グラフト共重合体を含む
ことはもちろんであり、上記混合物はいわゆるアロイを
含むことはもちろんである。この複層フィルムの製法と
しては、従来公知の共押出法、ラミネート法などが用い
られ、この際通常のラミネートフィルムの製造で通常行
われているように、複層フィルム間に接着剤を塗布して
もよい。このような接着剤としては、エチレン−酢酸ビ
ニル共重合体またはこれをマレイン酸変性したもの等、
従来公知の接着剤を使用することができる。The above-mentioned copolymer naturally contains a graft copolymer, and the above-mentioned mixture naturally contains a so-called alloy. As a method for producing the multilayer film, a conventionally known co-extrusion method, a laminating method, or the like is used. At this time, an adhesive is applied between the multilayer films as is usually performed in the production of a normal laminated film. You may. Examples of such an adhesive include an ethylene-vinyl acetate copolymer or a maleic acid-modified ethylene-vinyl acetate copolymer.
Conventionally known adhesives can be used.

【００１６】本発明に用いられる放射線硬化性粘着剤を
塗布する側の粘着剤塗布層用の樹脂としては、放射線透
過性で、半導体ウエハを汚染し難く、放射線硬化性粘着
剤との粘着力が大きいもの、例えばエチレン系のものが
好ましく、低密度ポリエチレン、直鎖低密度ポリエチレ
ン、エチレン−酢酸ビニル共重合体、エチレン−メタア
クリル酸メチル共重合体、エチレン−メタアクリル酸エ
チル共重合体、エチレン−メタアクリル酸共重合体、エ
チレン−アクリル酸共重合体等従来公知のもの、あるい
はこれらの混合物等が挙げられ、用いられる放射線硬化
性粘着剤との接着性によって任意に選択することができ
る。この粘着剤塗布層は、中心層からのブリード物が半
導体ウエハを汚染するのを防止すると同時に粘着剤と基
材フィルムとの接着力を大きくすることにより粘着テー
プ延伸時の粘着剤の剥離による半導体ウエハの汚染を防
止するためのものである。The resin for the pressure-sensitive adhesive coating layer on the side to be coated with the radiation-curable pressure-sensitive adhesive used in the present invention is radiation-transparent, hardly contaminates semiconductor wafers, and has an adhesive force with the radiation-curable pressure-sensitive adhesive. Larger ones, for example, ethylene-based ones are preferable, and low-density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer, ethylene-ethyl methacrylate copolymer, ethylene -Conventionally known materials such as methacrylic acid copolymer and ethylene-acrylic acid copolymer, and mixtures thereof, etc., can be arbitrarily selected depending on the adhesiveness to the radiation-curable pressure-sensitive adhesive used. This pressure-sensitive adhesive coating layer prevents bleeding from the central layer from contaminating the semiconductor wafer and at the same time increases the adhesive strength between the pressure-sensitive adhesive and the base film, thereby removing the pressure-sensitive adhesive when the pressure-sensitive adhesive tape is stretched. This is to prevent wafer contamination.

【００１７】本発明に用いられる転写防止層用の樹脂と
しては、例えばエチレン系のものが好ましく、低密度ポ
リエチエン、直鎖低密度ポリエチエン、エチレン−酢酸
ビニル共重合体、エチレン−メタアクリル酸メチル共重
合体、エチレン−メタアクリル酸エチル共重合体、エチ
レン−メタアクリル酸共重合体、エチレン−アクリル酸
共重合体等、従来公知のもの、あるいはこれらの混合物
等が挙げられる。この転写防止層は、粘着テープの伸び
特性を妨げず、基材フィルムのブロッキングを防止し、
また基材フィルムまたは粘着テープを巻状態で保管する
際に中心層からのブリード物が放射線硬化性粘着層また
は粘着剤塗布層に転写し、結果的に半導体ウエハを汚染
することを防止するためのものである。The resin for the anti-transfer layer used in the present invention is preferably, for example, an ethylene resin, and is preferably a low-density polyethylene, a linear low-density polyethene, an ethylene-vinyl acetate copolymer, or an ethylene-methyl methacrylate copolymer. A conventionally known polymer such as a polymer, an ethylene-ethyl methacrylate copolymer, an ethylene-methacrylic acid copolymer, an ethylene-acrylic acid copolymer, or a mixture thereof may be used. This anti-transfer layer does not hinder the elongation characteristics of the adhesive tape, prevents blocking of the base film,
Also, to prevent bleed from the central layer from being transferred to the radiation-curable pressure-sensitive adhesive layer or pressure-sensitive adhesive coating layer when storing the base film or the pressure-sensitive adhesive tape in a wound state, thereby preventing the semiconductor wafer from being contaminated. Things.

【００１８】なお、粘着テープ延伸時の粘着テープと治
具との摩擦を減少し、基材フィルムのネッキングを防止
するために転写防止層として低密度ポリエチエン、エチ
レン−酢酸ビニル共重合体、さらにエチレン−酢酸ビニ
ル共重合体は酢酸ビニル含量が５％以下のエチレン−酢
酸ビニル共重合体を用いることが好ましい。中心層と粘
着剤塗布層又は転写防止層とを接着するための接着剤と
しては、エチレン−酢酸ビニル共重合体、これをマレイ
ン酸変性したもの、マレイン酸変性エチレン−α−オレ
フィン共重合体、共重合ポリエステル系樹脂等従来公知
の接着性化合物、又はこれらの混合物等を用いることが
できる。In order to reduce the friction between the pressure-sensitive adhesive tape and the jig when the pressure-sensitive adhesive tape is stretched and prevent necking of the base film, a low-density polyethylene, ethylene-vinyl acetate copolymer, and ethylene It is preferable to use an ethylene-vinyl acetate copolymer having a vinyl acetate content of 5% or less as the vinyl acetate copolymer. As an adhesive for bonding the center layer and the pressure-sensitive adhesive coating layer or the transfer prevention layer, an ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-α-olefin copolymer, A conventionally known adhesive compound such as a copolymerized polyester resin, or a mixture thereof can be used.

【００１９】なお、接着剤として用いるエチレン−酢酸
ビニル共重合体、これをマレイン酸変性体は酢酸ビニル
含量が２０％以上のものが接着力が大きく層間剥離を起
こし難いので好ましい。この積層フィルムの製造は共押
出法、ラミネート法など公知の方法が用いられる。The ethylene-vinyl acetate copolymer used as the adhesive and the maleic acid-modified copolymer having a vinyl acetate content of 20% or more are preferred because they have a large adhesive strength and hardly cause delamination. Known methods such as a coextrusion method and a lamination method are used for the production of the laminated film.

【００２０】基材フィルムの厚みは、強伸度特性、放射
線透過性の観点から通常３０〜３００μｍが適当であ
る。基材フィルムが積層フィルムの場合、中心層の厚さ
比率は、基材フィルムの要求特性に応じて任意に設定さ
れるが、通常積層フィルムの総厚に対して３０％以上が
好ましく、５０〜９０％がより好ましい。また、接着剤
塗布層と転写防止層の両方とも設けると、基材フィルム
の構造が対称系となるので、基材フィルムの端がどちら
か一方にカールすることがなく、操作上好ましい。The thickness of the base film is usually suitably from 30 to 300 μm from the viewpoints of strong elongation characteristics and radiation transparency. When the base film is a laminated film, the thickness ratio of the center layer is arbitrarily set according to the required characteristics of the base film, but is usually preferably 30% or more with respect to the total thickness of the laminated film, and 50 to 50%. 90% is more preferred. Further, when both the adhesive coating layer and the transfer prevention layer are provided, the structure of the base film becomes symmetrical, so that the end of the base film does not curl to one side, which is preferable in operation.

【００２１】なお、基材フィルムの放射線硬化性粘着剤
を塗布する側の他方側をシボ加工もしくは滑剤コーティ
ングするとブロッキングの防止、粘着テープ延伸時の粘
着テープと治具との摩擦を減少する事による基材フィル
ムのネッキングの防止となるので好ましい。When the other side of the base film on which the radiation-curable pressure-sensitive adhesive is applied is textured or coated with a lubricant, blocking is prevented, and friction between the pressure-sensitive adhesive tape and the jig during stretching of the pressure-sensitive adhesive tape is reduced. This is preferable because necking of the base film is prevented.

【００２２】放射線硬化性粘着剤としては、例えば従来
公知の粘着剤が用いられるがアクリル系粘着剤１００重
量部に対し炭素−炭素二重結合を有するシアヌレート化
合物及びイソシアヌレート化合物の群から選ばれた少な
くとも一種の化合物１０〜２００重量部と炭素−炭素二
重結合を二個有する直鎖状のポリエステルまたはポリオ
ール系ウレタンアクリレート化合物５〜１００重量部と
を含有する粘着剤を用いると放射線照射後の粘着層のゴ
ム状弾性を維持することができ放射線照射後の粘着テー
プにおいて、ゴム状弾性（柔軟性）を維持する効果が特
に大きい。As the radiation-curable pressure-sensitive adhesive, for example, a conventionally known pressure-sensitive adhesive is used, and is selected from the group consisting of a cyanurate compound and an isocyanurate compound having a carbon-carbon double bond per 100 parts by weight of an acrylic pressure-sensitive adhesive. When an adhesive containing 10 to 200 parts by weight of at least one compound and 5 to 100 parts by weight of a linear polyester or a polyol-based urethane acrylate compound having two carbon-carbon double bonds is used, the adhesiveness after irradiation is obtained. The rubbery elasticity of the layer can be maintained, and the effect of maintaining the rubbery elasticity (flexibility) of the pressure-sensitive adhesive tape after irradiation is particularly large.

【００２３】なお、本発明の半導体ウエハ固定用粘着テ
ープを紫外線照射によって硬化させる場合には、光重合
開始剤、例えばイソプロピルベンゾインエーテル、イソ
ブチルベンゾインエーテル、ベンゾフェノン、ミヒラー
ズケトン、クロロチオキサントン、ドデシルチオキサン
トン、ジメチルチオキサントン、ジエチルチオキサント
ン、ベンジルジメチルケタール、α−ヒドロキシシクロ
ヘキシルフェニルケトン、２−ヒドロキシメチルフェニ
ルプロパン等を粘着剤層に添加すると硬化反応時間また
は紫外線照射量が少なくても効率よく硬化反応を進行さ
せ、素子固定粘着力を低下させることができる。さらに
必要に応じて放射線照射後の素子固定粘着力を良好に低
下させるため放射線硬化性のシリコンアクリレート又は
シリコンメタアクリレートあるいは被着体である半導体
ウエハの表面に金属物質のコーティングされている特殊
処理面に対しても同様に素子固定粘着力を低下させるた
め、イオン封鎖剤等を、またタッキファイアー、粘着調
整剤、界面活性剤など、あるいはその他の改質剤及び慣
用成分を配合することができる。この放射線硬化性粘着
剤層の厚さは通常２〜５０μｍとする。When the adhesive tape for fixing a semiconductor wafer of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone is used. , Diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. added to the pressure-sensitive adhesive layer allows the curing reaction to proceed efficiently even if the curing reaction time or the amount of ultraviolet irradiation is small, and the element is fixed. Adhesive strength can be reduced. In addition, if necessary, a radiation-curable silicon acrylate or silicon methacrylate, or a specially treated surface coated with a metal material on the surface of the semiconductor wafer to be adhered, in order to reduce the adhesive strength of the device after radiation irradiation properly. Similarly, in order to lower the adhesive strength for fixing the element, an ion sequestering agent and the like, a tackifier, an adhesion regulator, a surfactant, and the like, or other modifiers and common components can be blended. The thickness of the radiation-curable pressure-sensitive adhesive layer is usually 2 to 50 μm.

【００２４】[0024]

【実施例】次に本発明を実施例に基づきさらに詳細に説
明する。なお、以下の実施例で各特性は次のように試験
し、評価した。Next, the present invention will be described in more detail with reference to examples. In the following examples, each characteristic was tested and evaluated as follows.

【００２５】（１）粘着力（ｇ／２５ｍｍ） 素子固定粘着力の照射前の大きさと照射後の低さの程度
を調べる指標である。作成した放射線硬化性粘着テープ
に直径５インチの大きさのＳｉウエハを被着体とし、Ｊ
ＩＳＺ−０２３７に基づき紫外線照射前後の粘着力を測
定した（９０℃剥離、剥離強度５０mm/min）。この際、
粘着テープに貼合するウエハの表面状態は、鏡面、及び
ラッピング＃６００仕上げ面（表面状態がＵＳメッシュ
＃６００相当の微細な凹凸を有する）の２つの面状態と
した。粘着力は次のように評価される。 ＵＶ照射前 良好：≧１２０（ｇ／２５ｍｍ） 不良：＜１２０（ｇ／２５ｍｍ） ＵＶ照射後 良好：≦３０（ｇ／２５ｍｍ） 不良：＞３０（ｇ／２５ｍｍ）(1) Adhesive force (g / 25 mm) This is an index for examining the magnitude of the element fixing adhesive force before irradiation and the degree of lowness after irradiation. A 5-inch diameter Si wafer was used as an adherend on the radiation-curable adhesive tape thus prepared.
Based on ISZ-0237, the adhesive strength before and after ultraviolet irradiation was measured (peeling at 90 ° C., peeling strength 50 mm / min). On this occasion,
The surface state of the wafer to be bonded to the adhesive tape was two surface states: a mirror surface and a lapping # 600 finished surface (having fine irregularities equivalent to US mesh # 600). The adhesive strength is evaluated as follows. Before UV irradiation Good: ≧ 120 (g / 25 mm) Bad: <120 (g / 25 mm) After UV irradiation Good: ≦ 30 (g / 25 mm) Bad:> 30 (g / 25 mm)

【００２６】（２）素子間隙（μｍ） 粘着テープ延伸時の素子間隙の大きさと縦方向／横方向
の均一性の程度を調べる指標である。３×３ｍｍの大き
さにフルカットし、紫外線硬化後、ウエハ拡張装置（エ
アー圧２．０kg/cm2）にて延伸した際の縦方向、横方向
の素子間隙量を測定し、素子間隙の大きさ、均一性をみ
た。素子間隙量は、ダイシング時のブレード厚さ４０μ
ｍを含む。 素子間隙の大きさ（ｑ） ｑ≧２００μｍ：素子の画像認識が十分可能である。 ２００＞ｑ≧１００μｍ：素子の画像認識が可能であ
る。 １００＞ｑ≧８０μｍ：素子の画像認識が困難である。 ｑ＜８０μｍ：素子の画像認識が不可能である。 均一性 縦方向／横方向≦１．５：良好 縦方向／横方向＞１．５：不良(2) Element gap (μm) This is an index for examining the size of the element gap and the degree of uniformity in the vertical and horizontal directions when the adhesive tape is stretched. After full-cut to a size of 3 × 3 mm, and after ultraviolet curing, the vertical and horizontal device gap amounts when stretched by a wafer expansion device (air pressure 2.0 kg / cm 2 ) were measured, and the device gap was measured. The size and uniformity were checked. The element gap amount is 40μ of blade thickness at the time of dicing.
m. Size of element gap (q) q ≧ 200 μm: Image recognition of the element is sufficiently possible. 200> q ≧ 100 μm: Image recognition of the element is possible. 100> q ≧ 80 μm: It is difficult to recognize the image of the element. q <80 μm: image recognition of the element is impossible. Uniformity Vertical / horizontal ≦ 1.5: good Vertical / horizontal> 1.5: bad

【００２７】（３）Ｓｉウエハの汚染 半導体ウエハを放射線硬化性粘着剤が汚染する程度（放
射線硬化性粘着材と基材フィルムとの接着性）を調べる
指標であり、また、半導体ウエハに悪影響を及ぼすか汚
染する化合物の存在の程度を調べる指標である。(3) Contamination of Si Wafer This is an index for examining the degree to which the radiation-curable adhesive contaminates the semiconductor wafer (adhesion between the radiation-curable adhesive and the base material film). It is an index for examining the degree of presence of a compound that exerts or contaminates.

【００２８】ウエハに対する接着強度が初期に３００〜
３５０ｇ／２５ｍｍ巾、硬化後に１０〜１５ｇ／２５ｍ
ｍ巾であるアクリル系接着剤を用いて巻物で保管してい
た基材フィルムにＳｉウエハを固定し４０℃×１カ月後
にＳｉウエハの汚染を評価し、次の基準に従って評価し
た。≧４Ｗのみが合格である。 ≧４Ｗ：４週間経過後も汚染されていない ３Ｗ：３週間経過迄は汚染されていない ２Ｗ：２週間経過迄は汚染されていない １Ｗ：１週間経過迄は汚染されていない ＜１Ｗ：１週間経過前に汚染されているThe adhesive strength to the wafer is initially 300 to
350g / 25mm width, 10-15g / 25m after curing
The Si wafer was fixed to the base film stored in a roll using an acrylic adhesive having a width of m, and the contamination of the Si wafer was evaluated after one month at 40 ° C., and evaluated according to the following criteria. Only ≧ 4 W is acceptable. ≧ 4W: not contaminated after 4 weeks 3W: not contaminated until 3 weeks 2W: not contaminated until 2 weeks 1W: not contaminated until 1 week <1W: 1 week Contaminated before passing

【００２９】（４）エキスパンドストローク３０ｍｍに
したときの状態 ○：破断しない ×：破断する。(4) State when expanded stroke is 30 mm ○: not broken ×: broken.

【００３０】実施例１〜７及び比較例１〜３ 表１、表２に示したような各層構成の基材フィルムを押
出機を用いて樹脂単体またはニーダー練りブレンド組成
物を（共）押出加工により作成した。得られた基材フィ
ルムの厚みはすべて１００μｍである。得られた基材フ
ィルムの粘着剤塗布側にコロナ処理をして、乾燥後の粘
着剤層の厚さが１０μｍとなるように粘着材を塗工し、
放射線硬化性粘着テープを作成した。この粘着テープの
各物性を上記に従って試験し、その結果を表１、表２に
示した。Examples 1 to 7 and Comparative Examples 1 to 3 The base films having the respective layers shown in Tables 1 and 2 were extruded from a resin alone or a kneaded blend composition using an extruder. Created by All of the obtained base films have a thickness of 100 μm. The obtained substrate film is subjected to a corona treatment on the pressure-sensitive adhesive application side, and a pressure-sensitive adhesive is applied so that the thickness of the pressure-sensitive adhesive layer after drying is 10 μm,
A radiation-curable adhesive tape was prepared. Each physical property of this pressure-sensitive adhesive tape was tested as described above, and the results are shown in Tables 1 and 2.

【００３１】なお、この実施例及び比較例で用いた化合
物は次の通りである。なお、粘着テープの中心層として
用いる材料において分子量が９万より大きいものは、ポ
リマー単独のものは、フィルムに成形できなかったの
で、評価に至らなかった。The compounds used in the examples and comparative examples are as follows. In addition, the material used as the center layer of the pressure-sensitive adhesive tape having a molecular weight of more than 90,000 was not evaluated because the polymer alone could not be formed into a film.

【００３２】材料Ａ（ＳＥＢＳ） シェル化学社製 ＫＲＡＴＯＮ Ｇ−１６５０ スチレン：２９％、分子量７００００ 材料Ｂ（ＳＥＢＳ） シェル化学社製 ＫＲＡＴＯＮ Ｇ−１６５７× スチレン：１３％、分子量８００００ 材料Ｃ（マレイン酸変性ＳＥＢＳ） 旭化成社製 タフテック Ｍ１９４３ スチレン：２０％、分子量５００００ 材料Ｄ（ＳＥＢＳ） 旭化成社製 タフテック Ｈ１０４１ スチレン：３０％、分子量５００００ 材料Ｅ（ＳＥＢＳ） 旭化成社製 タフテック Ｈ１０３１ スチレン：２０％、分子量３００００ 材料Ｆ（ＳＥＢＳ） 旭化成社製 タフテック Ｈ１０５１ スチレン：４０％、分子量５００００ 材料Ｇ（ＳＥＢＳ（分子量１０万以上、スチレン含量３
０％）とＥＰＤＭのブレンド） 三菱油化社製 ラバロン ＭＥ５３０２ＣMaterial A (SEBS) KRATON G-1650 styrene manufactured by Shell Chemical Co., Ltd .: 29%, molecular weight 70000 Material B (SEBS) KRATON G-1657 × styrene manufactured by Shell Chemical Co., Ltd .: 13%, molecular weight 80000 Material C (modified with maleic acid) SEBS) Asahi Kasei Corporation Tuftec M1943 Styrene: 20%, molecular weight 50,000 Material D (SEBS) Asahi Kasei Corporation Tuftec H1041 Styrene: 30%, molecular weight 50,000 Material E (SEBS) Asahi Kasei Corporation Tuftec H1031 Styrene: 20%, molecular weight 30,000 Material F (SEBS) Tuftec H1051 styrene manufactured by Asahi Kasei Corporation: 40%, molecular weight: 50,000 Material G (SEBS (molecular weight: 100,000 or more, styrene content: 3)
0%) and EPDM) Lavalon ME5302C manufactured by Mitsubishi Yuka

【００３３】 粘着剤Ａ：アクリル系粘着剤 １００重量部 イソシアヌレート化合物 ８０重量部 ウレタンアクリレート化合物 ２０重量部 光重合開始剤 １重量部 粘着剤Ｂ：アクリル系粘着剤 １００重量部 シアヌレート化合物 ４０重量部 ウレタンアクリレート化合物 １０重量部 粘着剤Ｃ：アクリル系粘着剤 １００重量部 イソシアヌレート化合物 ８０重量部 光重合開始剤 １重量部 ＥＶＡ−１５（エチレン−酢酸ビニル共重合体（酢酸ビ
ニル含量１０％）：住友化学工業社製 エバテート Ｈ
２０２１Ｆ ＥＶＡ−３（エチレン−酢酸ビニル共重合体（酢酸ビニ
ル含量３％）：三菱油化社製 ユカロン−エバＶ１１３
ＫAdhesive A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight Adhesive B: Acrylic adhesive 100 parts by weight Cyanurate compound 40 parts by weight Urethane Acrylate compound 10 parts by weight Adhesive C: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Photopolymerization initiator 1 part by weight EVA-15 (ethylene-vinyl acetate copolymer (vinyl acetate content 10%): Sumitomo Chemical Industrial Company Evatate H
2021F EVA-3 (Ethylene-vinyl acetate copolymer (vinyl acetate content 3%): Yucalon-Eva V113 manufactured by Mitsubishi Yuka Co., Ltd.
K

【００３４】[0034]

【表１】 [Table 1]

【００３５】[0035]

【表２】 [Table 2]

【００３６】実施例８及び比較例４、５ 表３に示したような各層構成の基材フィルムを用いた以
外は実施例１と全く同様にして放射線硬化性粘着テープ
を作成した。この粘着テープの各物性を実施例１と全く
同様に試験し、その結果を表３に示した。Example 8 and Comparative Examples 4 and 5 Radiation-curable pressure-sensitive adhesive tapes were prepared in exactly the same manner as in Example 1 except that the base films having the respective layer constitutions as shown in Table 3 were used. Each physical property of the pressure-sensitive adhesive tape was tested in exactly the same manner as in Example 1, and the results are shown in Table 3.

【００３７】なお、この実施例及び比較例で用いた化合
物は次の通りである。材料Ａ（エチレン−スチレン−ペ
ンテン共重合体） クラレ社製 セプトン ２０４３ スチレン：１３％、分子量約２０万 材料Ｂ（エチレン−スチレン−ペンテン共重合体） クラレ社製 セプトン ２０６３ スチレン：１３％、分子量約１０万 材料Ｃ（エチレン−スチレン−ペンテン共重合体） クラレ社製 セプトン ２１０３ スチレン：５０％、分子量約２０万The compounds used in Examples and Comparative Examples are as follows. Material A (Ethylene-styrene-pentene copolymer) Septon 2043 Styrene manufactured by Kuraray Co., Ltd .: 13%, molecular weight of about 200,000 Material B (Ethylene-styrene-pentene copolymer) Septon 2063 Styrene manufactured by Kuraray Co., Ltd .: 13%, molecular weight of about 10% 100,000 material C (ethylene-styrene-pentene copolymer) Septon 2103 styrene manufactured by Kuraray: 50%, molecular weight about 200,000

【００３８】 粘着剤Ａ：アクリル系粘着剤 １００重量部 イソシアヌレート化合物 ８０重量部 ウレタンアクリレート化合物 ２０重量部 光重合開始剤 １重量部 ＥＶＡ−１０（エチレン−酢酸ビニル共重合体（酢酸ビ
ニル含量１０％））：住友化学工業社製 エバテート
Ｈ２０２１Ｆ ＥＶＡ−３（エチレン−酢酸ビニル共重合体（酢酸ビニ
ル含量３％））：三菱油化社製 ユカロン−エバＶ１１
３ＫAdhesive A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight EVA-10 (ethylene-vinyl acetate copolymer (vinyl acetate content 10%) )): Evatate manufactured by Sumitomo Chemical Co., Ltd.
H2021F EVA-3 (ethylene-vinyl acetate copolymer (vinyl acetate content: 3%)): Yucalon-Eva V11 manufactured by Mitsubishi Yuka
3K

【００３９】[0039]

【表３】 [Table 3]

【００４０】[0040]

【発明の効果】本発明の半導体固定用粘着テープを半導
体ウエハ等の切断加工に用いた場合、回転丸刃による素
子切断時に素子小片の離脱や位置ずれが生ずることが無
い十分に固定することができるだけの素子固定粘着力を
有し、基材フィルムの放射透過性が良好であるので放射
線照射後には接着剤が三次元網状化構造をとり素子のピ
ックアップ時には十分に素子固定粘着力を低下せしめる
ことができる。また放射線照射後の粘着テープが柔軟性
を維持し延伸性が優れているので粘着テープによる素子
間隙の大幅で均一な拡大が可能となる。よって、素子を
容易にしかも損傷することなくピックアップすることが
できるという優れた効果を奏する。また基材フィルムに
半導体のウエハに悪影響を及ぼす塩素系化合物を使用せ
ず、半導体ウエハを汚染する金属化合物系安定剤、可塑
剤等の添加物を含有せず、半導体素子を放射線硬化性粘
着剤で汚染する事がないので、素子の歩留りを減少する
という優れた効果も奏する。When the adhesive tape for fixing a semiconductor according to the present invention is used for cutting a semiconductor wafer or the like, it is possible to sufficiently fix the element piece without detachment or displacement when the element is cut by a rotary round blade. Adhesive has a three-dimensional network structure after radiation irradiation because it has the element fixing adhesive strength as much as possible and the radiation transmittance of the base film is good, so that the element fixing adhesive force is sufficiently reduced when picking up the element Can be. In addition, since the adhesive tape after irradiation maintains flexibility and has excellent stretchability, the adhesive tape can greatly and uniformly expand the element gap. Therefore, there is an excellent effect that the element can be picked up easily and without damage. In addition, the base film does not use chlorine-based compounds that adversely affect semiconductor wafers, does not contain additives such as metal compound stabilizers and plasticizers that contaminate semiconductor wafers, and uses radiation-curable pressure-sensitive adhesives for semiconductor devices. , And an excellent effect of reducing the yield of the device is also achieved.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石渡 伸一 東京都千代田区丸の内２丁目６番１号 古河電気工業株式会社内 (72)発明者 岩本 和繁 東京都千代田区丸の内２丁目６番１号 古河電気工業株式会社内 (72)発明者 長谷部 守邦 東京都千代田区丸の内２丁目６番１号 古河電気工業株式会社内 (56)参考文献 特開 平３−37286（ＪＰ，Ａ) 特開 平３−205470（ＪＰ，Ａ) 特開 平４−309583（ＪＰ，Ａ) 特開 昭53−101027（ＪＰ，Ａ) 特開 昭61−243878（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C09J 7/02 H01L 21/301 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Ishiwatari 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Kazushige Iwamoto 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (72) Inventor Morikuni Hasebe 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (56) References JP-A-3-37286 (JP, A) 3-205470 (JP, A) JP-A-4-309583 (JP, A) JP-A-53-101027 (JP, A) JP-A-61-243878 (JP, A) (58) Fields investigated (Int. Cl. 7, DB name) C09J 7/02 H01L 21/301

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 基材フィルムの片面に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムとして中心層にスチレン重合体ブ
ロック成分（Ａ）及びエチレン−ブテン共重合体ブロッ
ク成分（Ｂ）を有し、かつ前記成分（Ａ）が成分
（（Ａ）＋（Ｂ））の１０〜３０重量％で、重量平均分
子量が３５０００〜９００００であるスチレン−エチレ
ン−ブテン−スチレンブロック共重合体系フィルムを用
い、接着層を介してまたは直接、前記放射線硬化性粘着
剤層を設ける側の表面に粘着剤塗布層、他方側表面に転
写防止層を積層したフィルムを用いてなることを特徴と
する半導体ウエハ固定用粘着テープ。1. A pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one surface of a base film, wherein a styrene polymer block component (A) and ethylene-butene It has a polymer block component (B), and the component (A) is a component
10 to 30% by weight of ((A) + (B) ), a styrene having a weight average molecular weight of from 35,000 to 90,000 - ethylene - butene - using styrene block copolymer film, or directly via the adhesive layer, wherein A pressure-sensitive adhesive tape for fixing a semiconductor wafer, comprising a film having a pressure-sensitive adhesive applied layer on the surface on which a radiation-curable pressure-sensitive adhesive layer is provided and a transfer prevention layer laminated on the other surface. 【請求項２】 基材フィルムの片面に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムとして中心層にスチレン重合体ブ
ロック成分（Ａ）及びエチレン−ペンテン共重合体ブロ
ック成分（Ｃ）を有し、かつ前記成分（Ａ）が成分
（（Ａ）＋（Ｃ））の１０〜３０重量％で、重量平均分
子量が１５万〜５０万であるスチレン−エチレン−ペン
テン−スチレンブロック共重合体系フィルムを用い、接
着層を介してまたは直接、前記放射線硬化性粘着剤層を
設ける側の表面に粘着剤塗布層、他方側表面に転写防止
層を積層したフィルムを用いてなることを特徴とする半
導体ウエハ固定用粘着テープ。2. A pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one surface of a base film, wherein the base film has a styrene polymer block component (A) and ethylene-pentene in a central layer. It has a polymer block component (C), and the component (A) is a component
10 to 30% by weight of ((A) + (C) ), styrene weight average molecular weight of from 150,000 to 500,000 - ethylene - pentene - using styrene block copolymer film, or directly via the adhesive layer A pressure-sensitive adhesive tape for fixing a semiconductor wafer, comprising a film having a pressure-sensitive adhesive coating layer laminated on the surface on which the radiation-curable pressure-sensitive adhesive layer is provided and a transfer prevention layer laminated on the other surface.
JP09209492A 1991-06-28 1992-03-18 Adhesive tape for fixing semiconductor wafers Expired - Lifetime JP3326195B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP09209492A JP3326195B2 (en) 1991-06-28 1992-03-18 Adhesive tape for fixing semiconductor wafers
MYPI92001221A MY111332A (en) 1991-06-28 1992-06-26 Semiconductor wafer-securing adhesive tape.
TW081105027A TW215453B (en) 1991-06-28 1992-06-26
KR1019920011393A KR0162103B1 (en) 1991-06-28 1992-06-27 Semiconductor wafer-securing adhesive tape
EP92110997A EP0520515B1 (en) 1991-06-28 1992-06-29 Semiconductor wafer-securing adhesive tape
DE69206331T DE69206331T2 (en) 1991-06-28 1992-06-29 Adhesive tape for attaching semiconductor chips.
US08/106,998 US5538771A (en) 1991-06-28 1993-08-17 Semiconductor wafer-securing adhesive tape

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18539791 1991-06-28
JP3-185397 1991-06-28
JP09209492A JP3326195B2 (en) 1991-06-28 1992-03-18 Adhesive tape for fixing semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH05125338A JPH05125338A (en) 1993-05-21
JP3326195B2 true JP3326195B2 (en) 2002-09-17

Family

ID=26433576

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3326195B2 (en)

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US8377514B2 (en) 2008-05-09 2013-02-19 Kraton Polymers Us Llc Sulfonated block copolymer fluid composition for preparing membranes and membrane structures
US8445631B2 (en) 2009-10-13 2013-05-21 Kraton Polymers U.S. Llc Metal-neutralized sulfonated block copolymers, process for making them and their use
EP2757136A1 (en) * 2011-10-31 2014-07-23 Tokyo Ohka Kogyo Co., Ltd. Adhesive composition for bonding water and supporting body for said wafer, adhesive film, and laminate
US9365662B2 (en) 2010-10-18 2016-06-14 Kraton Polymers U.S. Llc Method for producing a sulfonated block copolymer composition
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KR101393895B1 (en) * 2011-11-02 2014-05-13 (주)엘지하우시스 Adhesive film for protecting surfase of semiconductorwafer which has excellent cutting property
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Publication number Priority date Publication date Assignee Title
US8377514B2 (en) 2008-05-09 2013-02-19 Kraton Polymers Us Llc Sulfonated block copolymer fluid composition for preparing membranes and membrane structures
US8263713B2 (en) 2009-10-13 2012-09-11 Kraton Polymers U.S. Llc Amine neutralized sulfonated block copolymers and method for making same
US8445631B2 (en) 2009-10-13 2013-05-21 Kraton Polymers U.S. Llc Metal-neutralized sulfonated block copolymers, process for making them and their use
US9394414B2 (en) 2010-09-29 2016-07-19 Kraton Polymers U.S. Llc Elastic, moisture-vapor permeable films, their preparation and their use
US9429366B2 (en) 2010-09-29 2016-08-30 Kraton Polymers U.S. Llc Energy recovery ventilation sulfonated block copolymer laminate membrane
US9365662B2 (en) 2010-10-18 2016-06-14 Kraton Polymers U.S. Llc Method for producing a sulfonated block copolymer composition
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EP2757136A4 (en) * 2011-10-31 2015-03-25 Tokyo Ohka Kogyo Co Ltd Adhesive composition for bonding water and supporting body for said wafer, adhesive film, and laminate

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