WO2013099778A1 - Substrate for stealth dicing film, film for stealth dicing, and method for manufacturing electronic component - Google Patents

Substrate for stealth dicing film, film for stealth dicing, and method for manufacturing electronic component Download PDF

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Publication number
WO2013099778A1
WO2013099778A1 PCT/JP2012/083154 JP2012083154W WO2013099778A1 WO 2013099778 A1 WO2013099778 A1 WO 2013099778A1 JP 2012083154 W JP2012083154 W JP 2012083154W WO 2013099778 A1 WO2013099778 A1 WO 2013099778A1
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WIPO (PCT)
Prior art keywords
layer
film
ionomer
stealth dicing
resin
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PCT/JP2012/083154
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French (fr)
Japanese (ja)
Inventor
中野　重則
雅弘 錦織
芳恵 橋本
雄介 宮下
Original Assignee
三井・デュポンポリケミカル株式会社
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Application filed by 三井・デュポンポリケミカル株式会社 filed Critical 三井・デュポンポリケミカル株式会社
Priority to KR1020167018806A priority Critical patent/KR101832297B1/en
Priority to JP2013551669A priority patent/JP6073810B2/en
Priority to KR1020147019552A priority patent/KR20140102756A/en
Priority to KR1020167010280A priority patent/KR101742647B1/en
Priority to CN201280064243.0A priority patent/CN104011836B/en
Publication of WO2013099778A1 publication Critical patent/WO2013099778A1/en

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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
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Definitions

  • the present invention relates to a stealth dicing film substrate, and a stealth dicing film and an electronic component manufacturing method using the same.
  • the wafer When dicing a semiconductor wafer, the wafer is cut by a dicing blade while using cooling water and cleaning water, and in the next expansion process, the dicing film corresponding to the cut wafer is expanded to form small chips. It was done. At this time, the semiconductor wafer was fixed with a dicing film to prevent chips from being scattered.
  • a method of dicing a semiconductor wafer with a laser beam has been proposed (see, for example, Japanese Patent Application Laid-Open No. 2007-245173).
  • a dicing method using laser light a surface ablation method in which a laser is focused on a wafer surface and absorbed to dig a groove has been known for a long time.
  • a method of dividing the wafer from the modified region as a starting point by pulling a dicing film corresponding to the wafer for example, stealth dicing
  • the dicing film In the dicing method using laser light, when the laser light is irradiated through the dicing film, the dicing film has high transparency in order to divide the wafer without hindering the irradiated laser light. It is required to do. In addition, the dicing film is required to have a property that allows good division of the wafer after laser irradiation.
  • a dicing film having an expansion ratio and a haze in a predetermined range is disclosed (for example, see JP 2011-61097 A). According to this dicing film, it is said that a high division rate can be obtained.
  • a substrate for a dicing tape provided with a layer containing a potassium ionomer has been disclosed (for example, see JP2011-40449A). According to this base material for dicing tape, it is said that it is excellent in antistatic performance. Also disclosed is a semiconductor wafer sheet having a base material sheet containing an ionomer resin as a base polymer and a predetermined crystal dispersant blended therein, and an adhesive layer (for example, JP 2000-273416 A). And JP 2000-345129 A). According to this semiconductor wafer sheet, it is said that expanded uniformity can be obtained.
  • the base film does not cause problems due to loosening after the heat shrinking step by setting the Vicat softening point and the stress increase due to heat shrinkage to a predetermined range.
  • a dicing film is described (for example, see JP 2011-216508 A).
  • An adhesive tape for fixing a semiconductor wafer having a structure is disclosed (for example, see Japanese Patent Application Laid-Open No. 7-230972). According to this adhesive tape for fixing a semiconductor wafer, it is said that necking during expansion and adhesion to a pickup pin are prevented.
  • the dicing film described in Japanese Patent Application Laid-Open No. 2011-61097 has a certain degree of suitability in that the substrate is efficiently divided, and the substrate for dicing tape described in Japanese Patent Application Laid-Open No. 2011-40449 is disclosed.
  • the materials the use of potassium ionomer is expected to improve the antistatic performance, but none of the materials necessarily meet the market demands in terms of transparency or wafer fragmentation.
  • the sheets described in Japanese Patent Laid-Open Nos. 2000-273416 and 2000-345129 are assumed to be diced with a dicing blade, and are difficult to apply to dicing with a laser beam.
  • 2011-216508 discloses a technique for applying an ionomer to an adhesive tape for wafer processing, but it is a technique for solving the problem at the time of dicing with a blade, up to the workability at the time of laser dicing. Is not planned.
  • Japanese Patent Application Laid-Open No. 2011-210887 also discloses the application of an ionomer to an adhesive tape for wafer processing. This disclosure is also a technique for solving the problem at the time of dicing with a blade, and the workability at the time of laser dicing is also disclosed. Until is not planned. As described above, further improvement is expected for the laser processability of the dicing film.
  • polyolefin such as polypropylene is used for the intermediate layer constituting the laminated structure.
  • polypropylene or the like has an extremely large stress when it is stretched. Therefore, when a dicing film is expanded after laser irradiation by a stealth dicing method, whitening is likely to occur when the dicing film is expanded.
  • Japanese Patent Laid-Open No. 7-230972 which has a three-layer structure in which a layer using a terpolymer is an intermediate layer, the stress at the initial stage of elongation becomes too small, so that the wafer is divided. It is difficult to do well.
  • the irradiated laser light is collected inside the wafer without being affected by absorption or scattering. From the viewpoint of making it light, it is the actual situation that sufficient transparency cannot be ensured. Furthermore, from the viewpoint of determining the laser beam irradiation position, transparency in the visible region is required.
  • the dicing film is expanded after the laser irradiation to uniformly expand the dicing film, and the cracks in the wafer corresponding to the dicing film are divided as starting points.
  • the stress required for the dicing film satisfies a predetermined range that does not adversely affect other properties such as whitening.
  • the stress of the dicing film is insufficient, sufficient splitting properties cannot always be obtained.
  • the dicing film is required to have antistatic properties.
  • the present invention has been made in view of the above circumstances, is suitable for stealth dicing by laser light, and has excellent transparency and wafer division properties, and a stealth dicing film substrate and a stealth dicing film, and wafer division.
  • the present invention provides a method for manufacturing an electronic component having excellent properties.
  • Wafer splitting is the ease of division in a modified region inside a wafer formed using laser light.
  • the film substrate for dicing has good extensibility that it has expandability (expansion rate) of 102% or more while having a stress of 9 MPa or more and 19 MPa or less (preferable lower limit is a range exceeding 10 MPa). It is preferable in terms of obtaining.
  • the inventors of the present invention provide a wafer cutting property of the base material (hereinafter sometimes referred to as “stealth dicing film base material”) provided when producing a stealth dicing film including an adhesive layer and a base material. Studies were repeated to improve (ie initial stress) and expandability.
  • the present invention maintains the thickness of the film base material at an appropriate thickness, and adjusts the initial stress and the expansion rate of the film base material to a predetermined range, so that the balance between the splitting property and the expandability of the film base material is achieved. It has been achieved based on such knowledge.
  • ⁇ 1> Used as the base material of a stealth dicing film provided with an adhesive layer and a base material. It is a film substrate for stealth dicing having a range of 102% to 120%, a haze value of 10 or less, and a total light transmittance of 90% or more.
  • ⁇ 2> Selected from magnesium ionomer of ethylene / (meth) acrylic acid copolymer and zinc ionomer of ethylene / (meth) acrylic acid copolymer, derived from (meth) acrylic acid alkyl ester in the copolymer It is a film base material for stealth dicing as described in ⁇ 1> containing the ionomer resin whose structural unit copolymerization ratio is less than 7 mass%.
  • the copolymerization ratio in the copolymer of the structural unit derived from (meth) acrylic acid of at least one of the magnesium ionomer and the zinc ionomer is more than 10% by mass and 30% by mass or less.
  • ⁇ 2> The film substrate for stealth dicing described in 1.
  • ⁇ 4> The stealth dicing film substrate according to ⁇ 2> or ⁇ 3>, wherein at least one of the magnesium ionomer and the zinc ionomer has a degree of neutralization of more than 0% and 60% or less.
  • At least one of the magnesium ionomer and the zinc ionomer is the film substrate for stealth dicing according to ⁇ 2> or ⁇ 3>, which has a degree of neutralization of 10% to 40%.
  • ⁇ 6> A multilayer structure in which the layer X, the first layer Y, and the second layer Z in contact with the adhesive layer are sequentially stacked, or the layer X, the second layer Z, and the first layer in contact with the adhesive layer
  • the layer X in contact with the adhesive layer contains the resin A, the bending rigidity of the resin A is in the range of 100 MPa to 350 MPa, the first layer Y contains the resin B, and the bending of the resin B
  • the rigidity is in the range of 5 MPa to 350 MPa
  • the second layer Z includes the resin C
  • the bending rigidity of the resin C is in the range of 50 MPa to 350 MPa.
  • Stealth according to ⁇ 6> wherein the larger absolute value of the difference obtained by subtracting the bending rigidity of the resin B from the bending rigidity of the resin A or the resin C is in the range of 50 MPa to 345 MPa. It is a film substrate for dicing.
  • the first layer Y includes a resin B, and the resin B is a low density polyethylene, a linear low density polyethylene, an ethylene vinyl acetate copolymer, an ethylene / unsaturated carboxylic acid binary copolymer, and ⁇ 6> to ⁇ 6> which is at least one selected from the ionomer, the ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid terpolymer and the ionomer, and the ethylene / unsaturated carboxylic acid terpolymer 9>
  • the film substrate for stealth dicing according to any one of 9>.
  • the second layer Z includes a resin C, and the resin C is an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary.
  • the film substrate for stealth dicing according to any one of ⁇ 6> to ⁇ 10> which is at least one selected from a copolymer and an ionomer thereof.
  • a stealth dicing film comprising an adhesive layer and the stealth dicing film substrate according to any one of ⁇ 1> to ⁇ 13>.
  • the step of attaching the stealth dicing film according to ⁇ 14> to the back surface of the wafer, and the wafer to which the stealth dicing film is attached is irradiated with laser light from the stealth dicing film side, And a step of dicing the wafer with a laser beam through a stealth dicing film.
  • the thickness is in the range of 50 ⁇ m to 200 ⁇ m, the initial stress is in the range of 9 MPa to 19 MPa, the expansion rate is in the range of 102% to 120%, the haze value is 10 or less, the total light
  • a film substrate having a transmittance of 90% or more is used as a substrate for a stealth dicing film.
  • ⁇ 17> Use of a film base material for producing a film for stealth dicing, wherein the thickness is in the range of 50 ⁇ m to 200 ⁇ m, the initial stress is in the range of 9 MPa to 19 MPa, and the expansion rate is 102% or more This is the use of a film substrate having a range of 120% or less, a haze value of 10 or less, and a total light transmittance of 90% or more.
  • a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
  • a stealth dicing film base material and a stealth dicing film which are suitable for dicing with a laser beam and which are excellent in transparency and wafer cutting property.
  • a method for manufacturing an electronic component excellent in wafer cutting property is provided.
  • FIG. 1 is a schematic cross-sectional view showing a configuration example of a stealth dicing film.
  • Stealth dicing is a dicing method in which a laser is focused inside a silicon wafer to form a modified layer (crack or the like) in the wafer and external stress is applied by tape expanding or the like to divide the chip.
  • the stealth dicing film 1 includes a stealth dicing film base material 11 (hereinafter referred to as a base material 11) and an adhesive layer 12 provided on the base material 11.
  • the substrate 11 may be configured as either a single layer or a multilayer.
  • the base material 11 is configured in multiple layers, for example, as shown in FIG. 2, the base material 11 includes a layer 11 ⁇ / b> X, an intermediate layer 11 ⁇ / b> Y (or 11 ⁇ / b> Z), and an inner layer 11 ⁇ / b> Z (in contact with the adhesive layer 12 constituting the stealth dicing film).
  • a structure including a three-layer structure in which 11Y) is stacked may be used.
  • the wafer is made into chips by utilizing the extension force of the dicing film.
  • dicing sheets used for blade dicing and laser dicing which have been widely used in the past have been used as they are when producing micro-sized semiconductor chips.
  • the initial expansion strength initial stress
  • the extension force is not sufficiently transmitted to the modified portion formed inside the wafer, so that it becomes difficult to chip the wafer.
  • each chip cannot be divided by a dicing line, and a plurality of chips are connected, which may reduce the production yield of semiconductor chips. Therefore, in the present invention, in order to improve the wafer severability (that is, initial strength (also referred to as initial stress)) and expandability of the film substrate for stealth dicing, the thickness of the substrate is maintained at a predetermined thickness, By adjusting the initial stress and the expansion rate of the base material to a predetermined range, a balance between breakability and expandability is achieved.
  • initial strength also referred to as initial stress
  • the film substrate of the present invention has a multi-layer structure, but the transparency of the layer is maintained, laser diffusion and absorption are small, and the processing suitability by stealth dicing is excellent.
  • the stealth dicing film 1 is used for so-called stealth dicing, in which one surface is formed as an adhesive surface, and the wafer is divided (separated) in a non-contact manner starting from a crack formed in the wafer by laser light irradiation.
  • the stealth dicing film 1 is placed on the dicing table 6 and attached to the back surface of the wafer W, and laser is irradiated through the stealth dicing film 1.
  • Laser light L is guided inside the wafer W by laser irradiation, and a plurality of modified regions W1 are formed inside the wafer W by the laser light as shown in FIG. 3B.
  • the wafer W is separated into individual chips starting from the modified region W1 by applying an external stress to the stealth dicing film 1 and expanding it in the direction of the arrow.
  • the stealth dicing film 1 can be applied not only to the above stealth dicing but also to a dicing method using a dicing blade and other dicing methods using laser light.
  • the substrate may be configured as either a single layer or a multilayer of two or more layers.
  • ⁇ A. Single layer configuration ⁇ First, the case where the base material is configured in a single layer structure will be described.
  • FIG. 1 shows an example in which the substrate 11 is configured in a single layer structure.
  • the base material 11 is an ionomer resin base material formed using a magnesium ionomer of an ethylene / (meth) acrylic acid copolymer and / or a zinc ionomer of an ethylene / (meth) acrylic acid copolymer. It is.
  • the magnesium ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • a magnesium ionomer partially neutralized with magnesium is preferred.
  • the copolymer may be any of a block copolymer, a random copolymer, and a graft copolymer, but in consideration of transparency, a binary random copolymer, a ternary random copolymer, a binary It is preferable to use a graft copolymer of a random copolymer or a graft copolymer of a ternary random copolymer, more preferably a binary random copolymer or a ternary random copolymer.
  • a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass.
  • the degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range.
  • the preferable neutralization degree is in the range of 10% to 40%, and within this range, the balance of expandability, splitting property and transparency is excellent.
  • the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • the zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • Zinc ionomers partially neutralized with zinc are preferred.
  • the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer. However, in consideration of transparency, the copolymer is a binary random copolymer or a ternary random copolymer.
  • a copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable, and a binary random copolymer or a ternary random copolymer is more preferable.
  • a suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass.
  • the following range was neutralized with zinc ions.
  • the degree of neutralization with zinc ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range.
  • the preferable neutralization degree is in the range of 10% or more and 40% or less.
  • the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • the ethylene / (meth) acrylic acid copolymer constituting the ionomer is a copolymer in which at least ethylene and acrylic acid or methacrylic acid are copolymerized, and further a ternary or more in which a third copolymerization component is copolymerized. It may be a multi-component copolymer.
  • the third copolymerization component includes unsaturated carboxylic acid esters (for example, methyl acrylate, (Meth) acrylic acid alkyl esters such as ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, diethyl maleate), vinyl esters (Eg, vinyl acetate, vinyl propionate, etc.), unsaturated hydrocarbons (eg, propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl sulfuric acid, vinyl nitric acid, etc.
  • unsaturated carboxylic acid esters for example, methyl acrylate, (Meth) acrylic acid alkyl esters such as ethyl acrylate, isobutyl acrylate, n
  • an unsaturated carboxylic acid ester is preferable, and a (meth) acrylic acid alkyl ester (preferably having 1 to 4 carbon atoms in the alkyl moiety) is more preferable.
  • the content ratio of the structural unit derived from the third copolymer component in the ethylene / (meth) acrylic acid copolymer is preferably less than 7% by mass.
  • the ionomer resin in the present invention may contain an unsaturated carboxylic acid ester, but the content ratio of the constituent unit derived from the (meth) acrylic acid alkyl ester in the copolymer is preferably less than 7% by mass.
  • the stress of the dicing film is maintained, so that more excellent fragmentation can be obtained.
  • the content ratio of the structural unit derived from the (meth) acrylic acid alkyl ester is preferably 5% by mass or less, and does not have the structural unit derived from the (meth) acrylic acid alkyl ester (content ratio: zero% [mass ratio ]) Is more preferable.
  • the base material 11 has a multilayer structure in which a layer 11X, a layer 11Y (first layer Y), and a layer 11Z (second layer Z) in contact with the adhesive layer 12 are stacked at least in this order, And a multilayer structure composed of three or more layers selected from a multilayer structure in which the layer X, the layer 11Z (second layer Z), and the layer 11Y (first layer Y) in contact with the adhesive layer 12 are stacked at least in this order. It can be provided and configured.
  • the base material 11 can constitute a stealth dicing film by bringing it into contact with an adhesive layer 12 for fixing the wafer on one side thereof.
  • the adhesive layer 12 is in close contact with the “layer 11X in contact with the adhesive layer” in the multilayer structure of the substrate 11, as shown in FIG. Therefore, the layer 11X in contact with the adhesive layer is provided so as to be positioned on the surface layer (outermost layer) of the multilayer structure.
  • the first layer Y forms a three-layer structure.
  • the multilayer structure is formed between the layer X and the first layer Y that is in contact with the adhesive layer or the first layer Y.
  • Another layer on the second layer Z which is one end of the three-layer structure of the layer X / the first layer Y / the second layer Z between the layer Y and the second layer Z or in contact with the adhesive layer May be provided to form a multilayer structure of four or more layers.
  • the 1st layer Y and the 2nd layer Z are reverse as another aspect of the multilayer structure which has the layer X which touches the adhesion layer, the 1st layer Y, and the 2nd layer Z.
  • the layer X, the second layer Z, and the first layer Y, which are disposed in contact with the adhesive layer may be configured in a multilayer structure in this order.
  • the second layer Z forms an intermediate layer forming a three-layer structure.
  • the layer X between the layer X and the second layer Z in contact with the adhesive layer, the second layer Z and the first layer Y, or the layer X in contact with the adhesive layer.
  • another layer may be provided to form a multilayer structure of four or more layers.
  • the layer X in contact with the adhesive layer is a layer that is in close contact with the adhesive layer 12 made of, for example, an adhesive for fixing the wafer as shown in FIG. 2, and at least a resin (“resin A” in the present specification). (Also called).
  • a resin resin A
  • As an adhesion method a method of directly applying an adhesive to the layer X surface using a known method such as a gravure roll coater, reverse roll coater, kiss roll coater, dip roll coater, bar coater, knife coater, spray coater, etc.
  • a pressure-sensitive adhesive is coated on the release sheet by the above-mentioned known method to provide a pressure-sensitive adhesive layer, which is then adhered to the layer X, and the pressure-sensitive adhesive layer is transferred.
  • the resin A of the layer X a resin having polarity and compatibility with the pressure-sensitive adhesive of the pressure-sensitive adhesive layer 12 that is suitably configured for ultraviolet curing is preferably used.
  • the adhesive layer 12 is preferably an ultraviolet curable layer.
  • the adhesive layer 12 can be preferably configured using a resin capable of maintaining an ultraviolet curable composition and good adhesion.
  • the layer X in contact with the adhesive layer contains the resin A.
  • the flexural modulus of the resin A is preferably in the range of 100 MPa to 350 MPa.
  • the bending rigidity of the resin A being within the above range indicates that it is suitable for processing by stealth dicing (partition processing, particularly maintenance of initial stress).
  • the bending rigidity of the resin A is more preferably 150 MPa or more and 350 MPa or less, and further preferably 180 MPa or more and 350 MPa or less in terms of wafer dividing property.
  • the resin A contained in the layer X in contact with the adhesive layer is preferably a thermoplastic resin, more preferably an olefin polymer, for example, an ethylene / unsaturated carboxylic acid system containing ethylene and an unsaturated carboxylic acid as a copolymerization component. It is a copolymer.
  • an ionomer of a binary copolymer (ethylene / unsaturated carboxylic acid binary copolymer) obtained by copolymerizing ethylene and an unsaturated carboxylic acid is preferably used.
  • an ionomer of an ethylene / unsaturated carboxylic acid binary copolymer it is excellent in transparency (haze and total light transmittance) and fragmentability.
  • the content of the structural unit derived from the unsaturated carboxylic acid is preferably in the range of 1% by mass to 35% by mass, and preferably 5% by mass.
  • the range of 25% by mass or less is more preferable, and the range of 10% by mass or more and 20% by mass or less is particularly preferable.
  • the content ratio of the structural unit derived from the unsaturated carboxylic acid is 1% by mass or more, this means that the structural unit is positively contained, and transparency and adhesion are improved due to the inclusion of the unsaturated carboxylic acid. Become.
  • induced from unsaturated carboxylic acid being 35 mass% or less.
  • the range of 99 to 65 mass% is preferable, More preferably, it is the range of 90 to 80 mass%.
  • Examples of the unsaturated carboxylic acid constituting the ethylene / unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoester, and the like. Acrylic acid or methacrylic acid is preferred.
  • metal ions that neutralize the carboxyl group in the binary copolymer that is the base polymer of the ionomer include alkali metal ions such as lithium ions, sodium ions, and potassium ions; magnesium ions, calcium ions, zinc ions, and aluminum. And ions of polyvalent metals such as ions. Among these, magnesium ion or zinc ion is more preferable. These metal ions may be used alone or in combination of two or more.
  • the ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the degree of neutralization is preferably 90% or less, more preferably in the range of 20% or more and 85% or less. is there.
  • the magnesium ionomer a magnesium ionomer in which at least a part of the ethylene / (meth) acrylic acid copolymer is neutralized with magnesium is preferable.
  • the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer, but a binary random copolymer is preferable in consideration of transparency.
  • a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass.
  • the degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range.
  • the preferable neutralization degree is in the range of 10% or more and 40% or less.
  • the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • the zinc ionomer a zinc ionomer in which at least a part of the ethylene / (meth) acrylic acid copolymer is neutralized with zinc is preferable.
  • the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer, but a binary random copolymer is preferable in consideration of transparency.
  • a suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass.
  • the following range was neutralized with zinc ions.
  • the degree of neutralization with zinc ions is in the range of more than 0% to 90%, and in this range, extensibility and severability are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 90% or less, and transparency is excellent in this range.
  • the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • an ethylene / acrylic acid copolymer magnesium (Mg) ionomer or zinc (Zn) ionomer, and an ethylene / methacrylic acid copolymer are available from the viewpoint of availability.
  • magnesium (Mg) ionomer or zinc (Zn) ionomer is preferred.
  • the thickness of the layer X in contact with the adhesive layer is preferably in the range of 10 ⁇ m to 100 ⁇ m. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress).
  • the preferred thickness of the layer X in contact with the adhesive layer is 15 ⁇ m or more and 80 ⁇ m or less.
  • the ratio of the thickness of the layer X in contact with the adhesive layer in the stealth dicing film base material is preferably 10% or more of the total thickness of the film base material from the viewpoint of stable production as a film base material.
  • the ratio of the thickness of the first layer Y is preferably 20% or more of the total thickness of the film substrate from the viewpoint of balancing the splitting property and expandability.
  • the layer 11Y (first layer Y) constituting the multilayer structure of the substrate 11 is an intermediate layer (FIG. 2) provided between the layer X in contact with the adhesive layer and a layer 11Z (second layer Z) described later. 11Y) or an inner layer (reference numeral 11Y in FIG. 2) provided via the layer 11Z (second layer Z) with respect to the layer X in contact with the adhesive layer.
  • the first layer Y includes a resin B.
  • the flexural rigidity of the resin B is preferably in the range of 5 MPa to 350 MPa.
  • the bending rigidity of the resin B being within the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress).
  • the bending rigidity rate of resin B is more preferably 5 MPa or more and 330 MPa or less, and more preferably 10 MPa or more and 270 MPa or less in terms of expandability.
  • the resin B contained in the first layer Y is preferably a thermoplastic resin, such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and ethylene.
  • LDPE low-density polyethylene
  • LLDPE linear low-density polyethylene
  • ethylene Vinyl acetate copolymer, ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer, ethylene / unsaturated carboxylic acid ester 2
  • An original copolymer or the like is preferably used.
  • an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer are unsaturated carboxylic acid.
  • the content ratio of the structural unit derived from is preferably in the range of 1% by mass to 35% by mass, more preferably in the range of 5% by mass to 25% by mass, and particularly preferably in the range of 10% by mass to 20% by mass. Range.
  • the content ratio of the structural unit derived from the unsaturated carboxylic acid is 1% by mass or more, this means that the structural unit is positively contained, and transparency and metal adhesion are good due to the inclusion of the unsaturated carboxylic acid. become. Practical heat resistance is maintained by the content rate of the structural unit guide
  • Examples of the unsaturated carboxylic acid constituting the binary copolymer or the ternary copolymer include acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoester, and the like. In particular, acrylic acid or methacrylic acid is preferable.
  • Examples of the unsaturated carboxylic acid ester constituting the terpolymer include, for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, methacrylic acid
  • Examples include (meth) acrylic acid alkyl esters such as isobutyl acid, dimethyl maleate, and diethyl maleate. Of these, (meth) acrylic acid alkyl ester (the alkyl moiety preferably has 1 to 4 carbon atoms) is more preferable.
  • the metal ion for neutralizing the carboxyl group in the binary copolymer or ternary copolymer serving as the ionomer base polymer magnesium, zinc, sodium, potassium and the like are preferable, and among these, magnesium and zinc are more preferable.
  • the ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the neutralization degree is preferably 90% or less, more preferably 20% or more and 85% or less. is there.
  • the magnesium ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • a magnesium ionomer partially neutralized with magnesium is preferred.
  • the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer, but in consideration of transparency, a binary random copolymer, a ternary random copolymer, It is preferable to use a graft copolymer of an original random copolymer or a graft copolymer of a ternary random copolymer, more preferably a binary random copolymer or a ternary random copolymer.
  • a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass.
  • the degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range.
  • the preferable neutralization degree is in the range of 10% or more and 40% or less.
  • the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • the zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • Zinc ionomers partially neutralized with zinc are preferred.
  • the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer. However, in consideration of transparency, the copolymer is a binary random copolymer or a ternary random copolymer.
  • a copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable, and a binary random copolymer or a ternary random copolymer is more preferable.
  • a suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass.
  • the following range was neutralized with zinc ions.
  • the degree of neutralization with zinc ions is in the range of more than 0% to 90%, and in this range, extensibility and splitting are excellent.
  • the degree of neutralization is preferably in the range of 10% or more and 90% or less, and transparency is excellent in this range.
  • the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
  • the ethylene / unsaturated carboxylic acid ester copolymer is preferably an ethylene / (meth) acrylic acid alkyl ester copolymer.
  • the (meth) acrylic acid alkyl ester constituting the ethylene / (meth) acrylic acid alkyl ester copolymer include, for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methacrylic acid.
  • Preferable examples include methyl acid, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, and diethyl maleate.
  • one of the preferred embodiments is an embodiment in which the first layer Y is provided as an intermediate layer disposed between the layer X in contact with the adhesive layer and the second layer Z.
  • Another preferred embodiment is an embodiment in which the second layer Z is provided as an intermediate layer disposed between the layer X in contact with the adhesive layer and the first layer Y.
  • the first layer Y is provided as an intermediate layer disposed between the layer X and the second layer Z in contact with the adhesive layer constituting the multilayer structure, the layer X and the second layer Z in contact with the adhesive layer
  • the resin B contained in the first layer Y is, for example, a low layer from the viewpoint of reducing the stress (particularly the initial stress) as a film base material and providing an expansion function.
  • Low-density polyethylene LDPE
  • linear low-density polyethylene LLDPE
  • ethylene vinyl acetate copolymer ethylene / unsaturated carboxylic acid binary copolymer and its ionomer
  • Ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid terpolymers and their ionomers are preferred.
  • the resin C contained in the second layer Z is, for example, a low-density polyethylene (low-density polyethylene) from the viewpoint of providing an expansion function and providing sliding properties with the expansion stage that contacts the layer Y during expansion and blocking resistance.
  • LDPE linear low-density polyethylene
  • LLDPE linear low-density polyethylene
  • ethylene / unsaturated carboxylic acid binary copolymer and its ionomer ethylene / unsaturated carboxylic acid binary copolymer and its ionomer
  • ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester Ternary copolymers and their ionomers are preferred.
  • the thickness of the first layer Y is preferably in the range of 10 ⁇ m to 100 ⁇ m. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress).
  • a preferable thickness of the first layer Y is 15 ⁇ m or more and 80 ⁇ m or less.
  • the ratio of the thickness of the first layer Y in the film substrate for stealth dicing is preferably 10% or more of the thickness of the entire film substrate from the viewpoint of stable production as a film substrate.
  • the ratio of the thickness of the first layer Y is preferably 20% or more of the total thickness of the film substrate from the viewpoint of balancing the splitting property and expandability.
  • the layer 11Z (second layer Z) constituting the multi-layer structure of the substrate 11 is an inner layer (reference numeral in FIG. 2) provided via the layer 11Y (first layer Y) with respect to the layer X in contact with the adhesive layer. 11Z) or as an intermediate layer (reference numeral 11Z in FIG. 2) provided between the layer X in contact with the adhesive layer and the layer 11Y (first layer Y).
  • the second layer Z includes a resin C.
  • the bending rigidity of the resin C is preferably in the range of 50 MPa to 350 MPa.
  • the bending rigidity of the resin C being within the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress).
  • the flexural rigidity of the resin C is more preferably 50 MPa or more and 330 MPa or less, and further preferably 70 MPa or more and 330 MPa or less in terms of wafer parting properties.
  • the resin C contained in the second layer Z is preferably a thermoplastic resin, for example, an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary.
  • a copolymer and its ionomer are preferably used.
  • an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer are unsaturated carboxylic acid.
  • the content ratio of the structural unit derived from is preferably in the range of 1% by mass to 35% by mass, and more preferably in the range of 5% by mass to 20% by mass.
  • induced from unsaturated carboxylic acid being 35 mass% or less.
  • the content ratio of the structural unit derived from ethylene is preferably in the range of 99% by mass to 65% by mass, and more preferably in the range of 95% by mass to 80% by mass.
  • the details of the unsaturated carboxylic acid constituting the binary copolymer or the ternary copolymer and the unsaturated carboxylic acid ester constituting the ternary copolymer are as follows. It is synonymous with the unsaturated carboxylic acid and unsaturated carboxylic acid ester which comprise a binary copolymer or a ternary copolymer, and its preferable aspect is also the same.
  • metal ions that neutralize the carboxyl group in the binary copolymer that is the base polymer of the ionomer include alkali metal ions such as lithium ions, sodium ions, and potassium ions; magnesium ions, calcium ions, zinc ions, and aluminum. Examples include ions of polyvalent metals such as ions. Among these, magnesium ion or zinc ion is more preferable. These metal ions may be used alone or in combination of two or more.
  • the ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the degree of neutralization is preferably 90% or less, more preferably in the range of 20% or more and 85% or less. is there.
  • magnesium ionomer includes ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • a magnesium ionomer in which at least a part of the polymer is neutralized with magnesium is preferred.
  • the zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer.
  • Zinc ionomers partially neutralized with zinc are preferred.
  • the details of these magnesium ionomer and zinc ionomer are the same as the magnesium ionomer and zinc ionomer described in the section of the first layer Y described above, and the preferred embodiments are also the same.
  • the thickness of the second layer Z is preferably in the range of 10 ⁇ m to 100 ⁇ m. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress).
  • a preferred thickness of the second layer Z is not less than 15 ⁇ m and not more than 80 ⁇ m.
  • the ratio of the thickness of the second layer Z in the stealth dicing film base material is preferably 10% or more of the thickness of the entire film base material from the viewpoint of stable production as a film base material.
  • the ratio of the thickness of the second layer Z is preferably 20% or more of the total thickness of the film base material from the viewpoint of balancing the splitting property and the expandability.
  • the bending rigidity of the resin B included in the layer Y is subtracted from the bending rigidity of the resin A included in the layer X in contact with the adhesive layer or the bending rigidity of the resin C included in the layer Z.
  • the larger value of the absolute value of the difference (
  • ” represents an absolute value. When the value is 50 MPa or more, the wafer cutting property is excellent even when the strength of X is low, and the extensibility is excellent even when the strength of X is high.
  • the value is 345 MPa or less, it is advantageous in that the strength (flexural rigidity) of the layer X in contact with the adhesive layer can be relaxed to a good degree of separation.
  • the value having the larger absolute value of the difference is in the range of 50 MPa to 330 MPa.
  • the film base material for stealth dicing of the present invention is superior in terms of the ability to divide the wafer by stealth dicing, and the thickness of the layer X in contact with the adhesive layer is 15 ⁇ m or more and 80 ⁇ m or less, and the thickness of the layer Y is 15 ⁇ m or more and 80 ⁇ m or less. And the thickness of the layer Z is preferably 15 ⁇ m or more and 80 ⁇ m or less.
  • the film substrate for stealth dicing includes a multilayer structure in which the layer X, the first layer Y, and the second layer Z in contact with the adhesive layer are sequentially stacked, or the layer X and the second layer in contact with the adhesive layer. Z and the first layer Y are sequentially laminated, the layer X in contact with the adhesive layer contains the resin A, the bending rigidity of the resin A is 180 MPa or more and 350 MPa or less, the first A mode in which the layer Y includes the resin B, the bending rigidity of the resin B is 10 MPa or more and 270 MPa or less, the second layer Z includes the resin C, and the bending rigidity of the resin C is 70 MPa or more and 330 MPa or less. Is preferred.
  • the film substrate for stealth dicing of the present invention includes a multilayer structure in which a layer X in contact with the adhesive layer, a first layer Y, and a second layer Z are sequentially stacked, and the layer X in contact with the adhesive layer
  • the resin A included is an ethylene / acrylic acid copolymer Zn ionomer or Mg ionomer, an ethylene / methacrylic acid copolymer Zn ionomer or Mg ionomer
  • the resin B included in the first layer Y is a low density polyethylene.
  • LDPE Low-density polyethylene
  • LLDPE linear low-density polyethylene
  • ethylene vinyl acetate copolymer ethylene / (meth) acrylic acid binary copolymer and its Zn ionomer
  • the embodiment which is an original copolymer and its ionomer is preferable.
  • the ratio of each layer thickness is selected so that the total is 100%.
  • the ratio [%] is obtained from “thickness of each layer / total thickness ⁇ 100”.
  • the haze of the film substrate for stealth dicing according to the present invention is preferably as small as possible so as not to impede the transmission of laser light in terms of enhancing the splitting property.
  • the haze is 10 or less.
  • a haze of 10 or less indicates that the haze has transparency suitable for processing by stealth dicing using laser light.
  • the haze is preferably 9.0 or less, and more preferably 8.0 or less.
  • the haze is a value measured according to JIS K 7136 using a haze meter.
  • the total light transmittance of the film substrate for stealth dicing of the present invention is 90% or more from the viewpoint of improving the irradiation position accuracy using the camera in the stealth dicing process.
  • a total light transmittance of 90% or more indicates that the light transmittance suitable for processing by stealth dicing using laser light is provided.
  • the total light transmittance is a value measured according to JIS K 7361 using HM-150 type (manufactured by Murakami Color Research Co., Ltd.) in an atmosphere of 23 ° C. and 50% relative humidity.
  • the initial stress of the film substrate for stealth dicing of the present invention is in the range of 9 MPa to 19 MPa, and the preferred lower limit is in the range exceeding 10 MPa. Furthermore, the initial stress is more preferably 10 MPa or more and less than 17 MPa. If the initial stress is less than 9 MPa, the external stress when the wafer is divided cannot be maintained, and the wafer cannot be divided satisfactorily. On the other hand, when the initial stress exceeds 19 MPa, the expansion rate is deteriorated, and it is inferior in severability such as being unable to sever uniformly.
  • the initial stress in the present invention is based on JIS K 7127, and the test speed: 500 mm / s, test piece: width 10 mm ⁇ length 200 mm, and chuck interval: 100 mm for the MD direction and the TD direction of the film substrate for stealth dicing. Under the conditions, it is obtained as the stress measured when the specimen is stretched by 6%, and is evaluated by the average of the measured values of MD and TD.
  • the expansion rate of the film substrate for stealth dicing according to the present invention is 102% or more and 120% or less, preferably 104% or more and 120% or less, and more preferably 104% or more and 110% or less. If the expansion rate is less than the lower limit (102%) of the above range, the external stress at the time of dividing the wafer cannot be maintained, and the wafer cannot be divided well. A film substrate for stealth dicing whose expansion rate exceeds the upper limit (120%) of the above range cannot actually exist in the range of the initial stress of 9 MPa to 19 MPa.
  • the expansion rate is a value measured by the following method.
  • a rectangular sample piece having a longitudinal (MD) direction of 300 mm or more and a transverse (TD) direction of 300 mm or more is cut out from the produced stealth dicing film substrate.
  • the thickness of the substrate 11 is in the range of 50 ⁇ m to 200 ⁇ m.
  • the total thickness of the base material being within the above range indicates that the base material is suitable for stealth dicing.
  • the thickness of the substrate is preferably 150 ⁇ m or less from the viewpoints of expandability and transparency, and is preferably 80 ⁇ m or more from the viewpoint of fragmentability.
  • the base material 11 is what does not scatter the laser beam L, and it is preferable that the surface and the back surface are smooth.
  • the surface 11 and the back surface of the substrate 11 preferably have a surface roughness Ra (calculated average roughness) of 1.0 ⁇ m or less.
  • the surface roughness (Ra) is a value measured according to JIS B 0601-2001 using an optical interference type non-contact type surface shape roughness measuring instrument.
  • the surface resistivity of the stealth dicing film substrate of the present invention is preferably 1.0 ⁇ 10 9 ⁇ / sq or more and 1.0 ⁇ 10 12 ⁇ / sq or less from the viewpoint of antistatic performance.
  • a method of adding an antistatic agent containing a polyetherester component or an ion conductive compound is added in advance to a film substrate for stealth dicing. It can carry out using well-known methods, such as the method of doing.
  • the surface resistivity is a value measured with an applied voltage of 500 V using a Hiresta-UP (manufactured by Mitsubishi Chemical Corporation) at a test temperature of 23 ° C. and a relative humidity of 50%.
  • the film substrate for stealth dicing of the present invention preferably contains an antistatic agent containing a polyether ester component.
  • the melting point of the antistatic agent is preferably 155 ° C. or higher and 185 ° C. or lower, more preferably 160 ° C. or higher and 185 ° C. or lower, and particularly preferably 160 ° C. or higher and 180 ° C. or lower.
  • the antistatic property can be enhanced without impairing the transparency of the film substrate.
  • the melting point of the antistatic agent is within the above range, the transparency of the ionomer resin (particularly, zinc ionomer or magnesium ionomer) when containing the antistatic agent can be maintained high.
  • the melting point is obtained from the peak waveform that appears by measuring the difference in the calorific value between the measurement sample and the reference material by differential scanning calorimetry (DSC).
  • DSC differential scanning calorimetry
  • the antistatic agent examples include a low molecular weight antistatic agent and a high molecular weight antistatic agent, and a high molecular weight antistatic agent is preferable, and the high molecular weight antistatic agent includes a sulfonate in the molecule.
  • examples thereof include vinyl copolymers, alkyl sulfonates, alkyl benzene sulfonates, and betaines.
  • the salt of the inorganic proton acid examples include alkali metal salts, alkaline earth metals, zinc salts, and ammonium salts.
  • polyether ester amide examples include a block copolymer composed of a polyamide block and a polyoxyalkylene glycol block, and these blocks are ester-bonded.
  • Polyamide blocks in the polyether ester amide include, for example, dicarboxylic acid (eg, succinic acid, succinic acid, adipic acid, sebacic acid, dodecanedioic acid, terephthalic acid, isophthalic acid, 1,4-cyclohexanedicarboxylic acid, etc.) and diamine ( Examples: ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, decamethylenediamine, 2,2,4-trimethylhexamethylenediamine, 2,4,4-trimethylhexamethylenediamine, 1,3-bis (aminomethyl) ) Cyclohexane, 1,4-bis (aminomethyl) cyclohexane, methylenebis (4-aminocycl
  • Lactam It can be obtained by ring-opening polymerization, polycondensation of aminocarboxylic acids such as 6-aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, 12-aminododecanoic acid, or copolymerization of the lactam, dicarboxylic acid and diamine.
  • Such polyamide segments are nylon 4, nylon 6, nylon 46, nylon 66, nylon 610, nylon 612, nylon 6T, nylon 11, nylon 12, nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, and nylon 11 and nylon 12 are particularly preferable.
  • the molecular weight of the polyamide block is, for example, about 400 to 5000.
  • polyether block examples include polyoxyethylene glycol, polyoxypropylene glycol, polyoxytetramethylene glycol, polyoxyalkylene glycols such as polyoxyethylene / polyoxypropylene glycol, and mixtures thereof. These molecular weights are preferably about 400 to 6000, and more preferably about 600 to 5000.
  • antistatic agent examples include irgastat P-16, P-18, P-20, and P-22 manufactured by BASF Japan, Sanyo.
  • examples include Pelestat 230, Pelestat HC250, Pelestat 300, Pelestat 2450, Peletron PVH, and ENTILA MK400, MK440, SD100 manufactured by Mitsui DuPont Polychemical Co., Ltd.
  • the antistatic agent can be melt-mixed in a predetermined amount in the thermoplastic resin, or dry blended with an antistatic agent, and melt-mixed.
  • the antistatic agent may be contained in any of the layer X, the layer Y, and the layer Z constituting the film base material, or may be contained in all the layers of the layer X, the layer Y, and the layer Z.
  • the ultraviolet absorber When the ultraviolet absorber is contained, it can be carried out by the above-described method such as a method of kneading the ultraviolet absorber.
  • the content of the antistatic agent in the film base material is preferably more than 10% by mass, more preferably 30% by mass, and more than 10% by mass to 20% by mass with respect to the ionomer resin. % Is more preferable. When the content of the antistatic agent exceeds 10% by mass, the antistatic effect of the film substrate is excellent.
  • the transparency of a film base material is maintained because content of an antistatic agent is 30 mass% or less.
  • content of an antistatic agent is 30 mass% or less.
  • the stealth dicing film substrate of the present invention may further contain various other additives in addition to the above components.
  • additives include antioxidants, heat stabilizers, light stabilizers, UV absorbers, lubricants, antiblocking agents, rust inhibitors, antibacterial agents, flame retardants, flame retardant aids, crosslinking materials, and crosslinking agents.
  • An auxiliary agent etc. can be mentioned.
  • a conventionally known method such as a T-die cast molding method, a T-die nip molding method, an inflation molding method, an extrusion laminating method, or a calendar molding method can be used.
  • the adhesive layer 12 is not particularly limited, but is preferably an ultraviolet curable layer, and can be formed using, for example, an ultraviolet curable acrylic adhesive.
  • UV curable acrylic pressure-sensitive adhesives include (meth) acrylic monomers (meth) acrylic monomers such as (meth) acrylic acid and (meth) acrylic acid esters, the (meth) acrylic Copolymers of functional monomers and functional monomers (for example, polyacrylic esters such as polybutyl acrylate and 2-ethylhexyl polyacrylate), urethane acrylate oligomers, and mixtures of these polymers;
  • An ultraviolet curable pressure-sensitive adhesive containing at least a photopolymerization initiator can be mentioned.
  • the average molecular weight of the polymer is preferably a high molecular weight of about 500,000 to 1,000,000.
  • the average molecular weight refers to the weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
  • Examples of the (meth) acrylic acid ester include trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol mono.
  • Hydroxypenta (meth) acrylate dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, oligoester (Meth) acrylate etc. are mentioned.
  • the urethane acrylate oligomer is an ultraviolet polymerizable compound having at least two carbon-carbon unsaturated double bonds.
  • a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2, 4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.
  • the terminal isocyanate urethane prepolymer to be used is an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate).
  • DOO polyethylene glycol acrylate, those obtained by reacting a polyethylene glycol methacrylate).
  • Examples of the photopolymerization initiator include isopropyl benzoin ether, isobutyl benzine ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl Examples include propane.
  • a photoinitiator can be used individually or in combination of 2 or more types. By adding a photopolymerization initiator to the adhesive layer, the curing reaction can be efficiently advanced while suppressing the curing reaction time or radiation dose.
  • the adhesive layer also has high transparency like the base material described above.
  • the light transmittance of visible light in the adhesive layer is preferably 90% or more in the entire wavelength region of visible light from 400 nm to 800 nm.
  • the light transmittance of the whole stealth dicing film is preferably 90% or more, and more preferably 400 nm to 800 nm.
  • the light transmittance of the entire stealth dicing film is preferably 90% or more.
  • the light transmittance is a value measured using a spectrophotometer.
  • the thickness of the adhesive layer 12 is preferably 5 ⁇ m or more, and more preferably 10 ⁇ m or more.
  • the haze of the stealth dicing film of the present invention is preferably as small as possible so as not to impede the transmission of laser light in terms of increasing the fractionation rate.
  • the haze is preferably 10.0 or less, more preferably 9.0 or less, and still more preferably 8.0 or less.
  • the method for measuring haze is as described above. Further, it is desirable that no whitening phenomenon is observed in the whole or a part of the film after the film expansion.
  • the initial stress of the stealth dicing film of the present invention is preferably more than 9 MPa, more preferably 10 MPa or more and 19 MPa or less, and still more preferably 10 MPa or more and less than 17 MPa.
  • the initial stress is in the range exceeding 9 MPa, the external stress at the time of dividing the wafer is maintained, and the wafer can be divided satisfactorily.
  • it is advantageous in terms of expandability when the initial stress is 19 MPa or less.
  • the method for measuring the initial stress is as described above (based on JIS K 7127).
  • the expansion rate of the stealth dicing film of the present invention is preferably 102% to 120%, more preferably 104% to 120%.
  • the expansion rate is equal to or greater than the lower limit of the above range, the external stress at the time of dividing the wafer is maintained, and the wafer can be divided well.
  • the expansion rate is less than or equal to the upper limit of the above range, the film is uniformly stretched, and expansion unevenness and film distortion can be suppressed.
  • the method for measuring the expansion rate is as described above.
  • the manufacturing method of the electronic component using the film for stealth dicing of this invention is explained in full detail.
  • the method for manufacturing an electronic component of the present invention includes a step of attaching the above-described stealth dicing film of the present invention to the back surface of the wafer (film pasting step)
  • a step (dicing step) of irradiating a laser beam from the dicing film side and stealth dicing the wafer with the laser beam through the stealth dicing film is provided.
  • the method for manufacturing an electronic component of the present invention may be configured by further providing other steps as necessary.
  • the adhesive layer 12 of the stealth dicing film 1 is fixed to the back surface (surface opposite to the element forming surface) of the wafer W, and the stealth dicing film 1 is attached to the end of the adhesive layer 12. Is placed in contact with the dicing table 6 and fixed to the dicing table with the adhesive layer 12 (film sticking step). Next, laser light is irradiated from the substrate 11 side of the dicing tape 1 and the laser light L is guided to the inside of the wafer W through the stealth dicing film 1, thereby along the dicing line inside the wafer W. Then, as shown in FIG. 3B, a reforming portion (modified region) W1 is formed. Thereafter, as shown in FIG.
  • the film is expanded by pulling the end of the stealth dicing film 1 in the direction of the arrow (dicing step).
  • the wafer W is divided into a plurality of parts along the reforming portion W1 starting from the reforming portion W1.
  • the adhesive layer 12 of the stealth dicing film 1 is irradiated with ultraviolet rays, the adhesive layer 12 is solidified and the adhesive strength of the layer is reduced. Thereby, a plurality of wafers, that is, individual chips (electronic components) can be removed from the stealth dicing film 1, and a desired electronic component can be obtained.
  • a known laser such as an Nd: YAG laser, an Nd: YVO laser, an Nd: YLF laser, a titanium sapphire laser, a CO 2 laser, or an argon ion laser that generates pulsed laser light is selected depending on the case. can do.
  • the method for manufacturing an electronic component according to the present invention is intended for a silicon wafer.
  • a compound semiconductor wafer such as a glass wafer, a silicon carbide wafer, a sapphire wafer, a gallium phosphide wafer, or a gallium arsenide wafer may be used. .
  • the ethylene unit content is the content ratio of structural units derived from ethylene
  • the methacrylic acid unit content is the content ratio of structural units derived from methacrylic acid
  • the isobutyl acrylate unit content is the content of structural units derived from isobutyl acrylate. The ratio is shown respectively.
  • Ionomer (IO-1) Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
  • Metal cation source Magnesium Neutralization degree: 35% MFR (190 ° C., 2160 g load): 5.9 g / 10 minutes
  • Ionomer (IO-2) Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
  • Metal cation source Magnesium Neutralization degree: 54% MFR (190 ° C., 2160 g load): 0.7 g / 10 min
  • Ionomer (IO-3) Base polymer: ethylene / methacrylic acid / isobutyl acrylate copolymer (ethylene unit content: 80 mass%, methacrylic acid unit content: 10 mass%, isobutyl acrylate unit content: 10 mass%)
  • Ethylene / (meth) acrylic acid copolymer Ethylene / methacrylic acid copolymer (ethylene unit content: 91% by mass, methacrylic acid unit content: 9% by mass) MFR (190 ° C., 2160 g load): 3.0 g / 10 min
  • Polyetherester component (B-1) Product name: Irgastat P-16 (melting point (DSC measurement): 158 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
  • Polyetherester component (B-2) Product name: Irgastat P-18 (melting point (DSC measurement): 173 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
  • Polyetherester component (B-3) Product name: Irgastat P-20 (melting point (DSC measurement): 195 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
  • the cutting performance of each stealth dicing film base material produced was evaluated according to the following evaluation criteria.
  • the division rate [%] is a value obtained by “(number of actually divided) / (total number of divisions) ⁇ 100”.
  • D The division could not be easily performed.
  • Examples 1 to 4 are shown in comparison with Comparative Examples.
  • Example 1 Using a 50 mm ⁇ single-screw extruder inflation molding machine, the ionomer (IO-1) is introduced into the resin inlet of this molding machine, and the die temperature is set to 190 ° C. and the 80 ⁇ m-thick ionomer film substrate (stealth dicing film) Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 2 an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was changed to the ionomer (IO-6) and the die temperature was changed to 200 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 3 an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-2) and the die temperature was changed to 230 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 4 In Example 1, except that the ionomer (IO-1) was replaced with the ionomer (IO-4) and the die temperature was changed to 180 ° C., the ionomer film substrate (the film for stealth dicing) was the same as in Example 1. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 1 an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-3) and the die temperature was changed to 210 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 2 an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-5) and the die temperature was changed to 180 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 3 In Example 1, except that the ionomer (IO-1) was replaced with the ionomer (IO-7), the die temperature was changed to 210 ° C., and the thickness was changed to 220 ⁇ m. (Film substrate for stealth dicing) was produced. About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 4 a film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 1 except that ionomer (IO-1) was replaced with EMAA and the die temperature was changed to 180 ° C. . About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
  • Example 5 examples in the case of containing an antistatic agent are shown in Examples 5 to 9.
  • the ionomer (IO-1) used was 85 parts by mass of ionomer (IO-1), 7.5 parts by mass of irgastat P-16 (polyetherester component (B-1)), and irgastat. Instead of 7.5 parts by mass of P-18 (polyether ester component (B-2)), these components were dry blended. The dry blended raw material was charged into a resin charging port of a single screw extruder equipped with a full flight type screw (40 mm ⁇ ), and then melt kneaded and pelletized.
  • an ionomer film substrate (film substrate for stealth dicing) was produced in the same manner as in Example 1. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 6 In Example 1, the ionomer (IO-1) used was replaced with 85 parts by weight of ionomer (IO-1) and 15 parts by weight of Irgastat P-18 (polyetherester component (B-2)). Dry blended. The dry blended raw material was charged into a resin charging port of a single screw extruder equipped with a full flight type screw (40 mm ⁇ ), and then melt kneaded and pelletized. Using the obtained pellets, an ionomer film substrate (film substrate for stealth dicing) was produced in the same manner as in Example 1. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 7 An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 5 except that ionomer (IO-1) was replaced with ionomer (IO-2) in Example 5. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 8 An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the ionomer (IO-1) was replaced with the ionomer (IO-2) in Example 6. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 9 In Example 6, the ionomer (IO-1) was replaced with the ionomer (IO-2), and Irgastat P-18 (15 parts by mass) was replaced with Irgastat P-16 (polyetherester component (B-1)) 15
  • An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the mass parts were replaced. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 6 the ionomer (IO-1) was replaced with the ionomer (IO-2), and Irgastat P-18 (15 parts by mass) was replaced with Irgastat P-20 (polyetherester component (B-3)) 15
  • An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the mass parts were replaced. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
  • Example 10 to 18 As the base material, the ionomer film base materials prepared in Examples 1 to 9 were prepared, and as the adhesive material for forming the adhesive layer, an ultraviolet curable acrylic adhesive (Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd.) was used. Oligomer)) was prepared. An ionomer film base material 11 as shown in FIG. 1 is applied on the base material by bar coating using the above base material and pressure-sensitive adhesive, which is obtained by dissolving an ultraviolet curable acrylic pressure-sensitive adhesive material in ethyl acetate. / Nine types of stealth dicing films having a multilayer structure of the adhesive layer 12 having a dry thickness of 20 ⁇ m were prepared.
  • an ultraviolet curable acrylic adhesive Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd.
  • Oligomer Oligomer
  • Example 19 to 27 As shown in FIG. 3A, the adhesive layer 12 of each stealth dicing film 1 was fixed to the back surface of the wafer W using the stealth dicing films prepared in Examples 10 to 18, and the stealth dicing film 1 was The end of the adhesive layer 12 is brought into contact with the dicing table 6 and fixed to the dicing table. Next, the laser beam is irradiated from the base material 11 side of the dicing tape 1 and guided through the stealth dicing film 1, thereby modifying along the dicing line inside the wafer W as shown in FIG. 3B. A portion W1 is formed. Thereafter, as shown in FIG.
  • the end portion of the stealth dicing film 1 is pulled in the direction of the arrow to expand the film, and is divided into a plurality of portions starting from the modified portion W1. Thereafter, the adhesive layer 12 is irradiated with ultraviolet rays, and a plurality of chips are taken out to obtain a desired electronic component.
  • Ethylene / (meth) acrylic acid copolymer Ethylene / methacrylic acid copolymer (ethylene unit content: 91% by mass, methacrylic acid unit content: 9% by mass) MFR (190 ° C., 2160 g load): 3.0 g / 10 min Flexural rigidity (according to JIS K 7106): 140 MPa (8) Ethylene / vinyl acetate copolymer (EVA) Ethylene / vinyl acetate copolymer (ethylene unit content: 81% by mass, vinyl acetate unit content: 19% by mass) MFR (190 ° C., 2160 g load): 2.5 g / 10 min Flexural rigidity (according to JIS K 7106): 40 MPa
  • Polyetherester component (B-1) Product name: Irgastat P-16, manufactured by BASF Japan Ltd.
  • Polyether ester component (B-2) Product name: Irgastat P-18, manufactured by BASF Japan Ltd.
  • Polyether ester component (B-4) Product name: Pelestat 230, manufactured by Sanyo Chemical Industries, Ltd. (melting point (DSC measurement): 163 ° C.)
  • Flexural rigidity (Olsen type) The raw material was press-molded with a press molding machine set at 190 ° C., and a 250 mm ⁇ 250 mm, 2 mm thick press sheet was prepared. About the created 2 mm thickness sheet
  • Example 28 Using a three-type three-layer inflation molding machine with a screw diameter of 45 mm ⁇ , IO-12 (Mg) as layer X forming resin in contact with the adhesive layer, IO-13 (Zn) as layer Y forming resin, and layer Z Using IO-12 (Mg) as a forming resin, a three-layer film having a multilayer structure of layer X / layer Y / layer Z in contact with the adhesive layer at a die temperature of 220 ° C. (total thickness 80 ⁇ m; stealth dicing Film base material).
  • the layer thicknesses of the layer X, the layer Y, and the layer Z that are in contact with the adhesive layer of the three-layer film are 25 ⁇ m, 30 ⁇ m, and 25 ⁇ m, respectively. Subsequently, the initial stress, haze, total light transmittance, and expansion rate were measured for the produced three-layer film. The results are shown in Table 3 below.
  • Example 29 Ionomer (IO-11 (Mg)) 85 parts by mass, Irgastat P-16 (polyetherester component (B-1)) 7.5 parts by mass, and Irgastat P-18 (polyetherester component (B-2) )) 7.5 parts by mass were melt-kneaded with a single screw extruder having a screw diameter of 40 mm ⁇ to prepare an ionomer composition for forming layer X and layer Z in contact with the adhesive layer.
  • this ionomer composition is used as the layer X forming resin in contact with the adhesive layer
  • IO-14 (Zn) is used as the layer Y forming resin
  • the die temperature is changed from 220 ° C. to 210 ° C.
  • a three-layer film was produced in the same manner as in Example 1 except that. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below. In addition, when the surface resistivity was measured, the surface resistivity was 1.7 ⁇ 10 14 ⁇ / sq.
  • Example 30 In Example 28, the layer X forming resin in contact with the adhesive layer was changed to IO-15 (Zn), the layer Z forming resin was changed to IO-15 (Zn), and the die temperature was changed from 220 ° C. to 200 ° C.
  • a three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 31 In Example 28, the layer X forming resin in contact with the adhesive layer was changed to IO-14 (Zn), the layer Z forming resin was changed to IO-14 (Zn), and the die temperature was changed from 220 ° C. to 200 ° C.
  • a three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 32 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. The same as Example 28, except that the temperature was changed from 220 ° C. to 210 ° C., and the thicknesses of the layers X (A), Y, and Z of the three-layer film were 28 ⁇ m, 21 ⁇ m, and 30 ⁇ m, respectively. Thus, a three-layer film was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 33 In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with C1, and the layer Z-forming resin is replaced with IO-16 (Zn).
  • a three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 34 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed.
  • a three-layer film was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 35 In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with EMAA, and the layer Z-forming resin is replaced with IO-16 (Zn).
  • IO-16 Zn
  • a three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 200 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 36 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed from 220 ° C. to 210 ° C.
  • a three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 37 In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with EVA, and the layer Z-forming resin is replaced with IO-16 (Zn).
  • IO-16 Zn
  • a three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 38 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film to 28 ⁇ m, 22 ⁇ m, and 30 ⁇ m, respectively (total thickness of the three-layer film: 80 ⁇ m) Produced a three-layer film in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 39 Using a three-type three-layer cast film molding machine with a screw diameter of 40 mm ⁇ , IO-16 (Zn) is used as the layer X forming resin in contact with the adhesive layer, EMAA is used as the layer Y forming resin, and layer Z forming resin is used.
  • IO-16 (Zn) is used as the layer X forming resin in contact with the adhesive layer
  • EMAA is used as the layer Y forming resin
  • layer Z forming resin is used.
  • a three-layer film having a multilayer structure of layer X / layer Y / layer Z in contact with the adhesive layer using IO-16 (Zn) at a die temperature of 210 ° C. (total thickness 77 ⁇ m; film substrate for stealth dicing) ) was produced.
  • the layer thicknesses of the layer X, the layer Y, and the layer Z that are in contact with the adhesive layer of the produced three-layer film are 29 ⁇ m, 20 ⁇ m, and 28 ⁇ m, respectively. Subsequently, the initial stress, haze, total light transmittance, and expansion rate were measured for the prepared three-layer film. These results are also shown in Table 3 below.
  • Example 40 In Example 39, a three-layer film was produced in the same manner as in Example 39 except that the layer Y forming resin was changed to C1. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
  • Example 41 85 parts by mass of ionomer (IO-16 (Zn)) and 15 parts by mass of perestat 230 (B-4) were melt-kneaded by a twin screw extruder having a screw diameter of 30 mm ⁇ , and layer X and layer Z in contact with the adhesive layer were obtained.
  • An ionomer composition was prepared for forming.
  • the ionomer composition is used as the layer X-forming resin in contact with the adhesive layer, the layer Y-forming resin C2, the layer Z-forming resin is used as the ionomer resin composition, and the die temperature is set.
  • a three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C.
  • Example 42 In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with C1, and the layer Z-forming resin is replaced with IO-16 (Zn).
  • a three-layer film having a multilayer structure of layer X / layer Z / layer Y was produced under the same conditions as in Example 28 except that was changed from 220 ° C. to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • Example 43 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film to 30 ⁇ m, 20 ⁇ m, and 30 ⁇ m, respectively (total thickness of the three-layer film: 80 ⁇ m) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • Example 44 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 20 ⁇ m, 30 ⁇ m, and 30 ⁇ m, respectively (total thickness of the three-layer film: 80 ⁇ m) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • Example 45 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 20 ⁇ m, 40 ⁇ m, and 20 ⁇ m, respectively (total thickness of the three-layer film: 80 ⁇ m) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • Example 46 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 15 ⁇ m, 50 ⁇ m, and 15 ⁇ m (total thickness of the three-layer film: 80 ⁇ m), respectively.
  • Example 47 To melt and knead 85 parts by mass of ionomer (IO-16 (Zn)) and 15 parts by mass of perestat 230 (B-4) with a twin screw extruder having a screw diameter of 30 mm ⁇ to form layer X in contact with the adhesive layer An ionomer composition was prepared. Further, an ionomer for forming layer Z by melt-kneading 85 parts by mass of ionomer (IO-13 (Zn)) and 15 parts by mass of perestat 230 (B-4) with a twin screw extruder having a screw diameter of 30 mm ⁇ . Composition Z was prepared.
  • Example 28 using this ionomer composition as the layer X forming resin in contact with the adhesive layer, using C2 as the layer Y forming resin, and using this ionomer resin composition Z as the layer Z forming resin, the die temperature was changed from 220 ° C. to 210 ° C., and the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film were changed to 45 ⁇ m, 15 ⁇ m, and 30 ⁇ m, respectively (total thickness of the three-layer film: 90 ⁇ m).
  • a three-layer film having a multilayer structure of layer X / layer Z / layer Y was prepared in the same manner as in Example 28 except for the above.
  • Example 47 In Example 47, except that the layer thicknesses of the layer X, layer Y, and layer Z of the three-layer film were changed to 35 ⁇ m, 15 ⁇ m, and 40 ⁇ m (total thickness of the three-layer film: 90 ⁇ m), respectively.
  • a three-layer film having a multilayer structure of layer X / layer Z / layer Y configuration was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • the surface resistivity was measured. The surface resistivity was 2.1 ⁇ 10 11 ⁇ / sq.
  • Example 49 Example 47 In Example 47, except that the layer thicknesses of the layer X, layer Y, and layer Z of the three-layer film were changed to 40 ⁇ m, 15 ⁇ m, and 25 ⁇ m (total thickness of the three-layer film: 80 ⁇ m), respectively.
  • a three-layer film having a multilayer structure of layer X / layer Z / layer Y configuration was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
  • the surface resistivity was measured, the surface resistivity was 1.7 ⁇ 10 11 ⁇ / sq.
  • Example 28 the layer X forming resin in contact with the adhesive layer was replaced with IO-13 (Zn), the layer Z forming resin was replaced with IO-13 (Zn), and the die temperature was changed from 220 ° C. to 210 ° C.
  • a film was produced in the same manner as in Example 28 except for the above. Here, each layer is formed using IO-13 (Zn), and the substantially produced film is composed of a single layer. Moreover, with respect to the produced film, the initial stress, haze, total light transmittance, and expansion rate were measured. These results are also shown in Table 5 below.
  • Example 39 the layer X forming resin in contact with the adhesive layer is changed to C4, the layer Y forming resin is changed to C4, the layer Z forming resin is changed to C4, the die temperature is changed from 210 ° C. to 240 ° C., and A film was produced in the same manner as in Example 39 except that the total thickness was 80 ⁇ m.
  • each layer is formed using C4, and the substantially produced film consists of a single layer.
  • the initial stress and the expansion rate were measured with respect to the produced film.
  • Example 8 In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 70 ⁇ m, 90 ⁇ m, and 70 ⁇ m (total thickness of the three-layer film: 230 ⁇ m), respectively.
  • Example 9 In Example 28, the layer X forming resin in contact with the adhesive layer was changed to C2, the layer Y forming resin was changed to EVA, the layer Z forming resin was changed to C2, and the die temperature was changed from 220 ° C. to 200 ° C. A three-layer film was produced in the same manner as in Example 28 except for the above. About this produced three-layer film, the initial stress, the haze, and the total light transmittance were measured. These results are also shown in Table 5 below.
  • Example 10 the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C3, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed.
  • a three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 5 below.
  • Example 50 to 69 As the base material, the ionomer film base materials prepared in Examples 28 to 49 were prepared, and as the adhesive material for forming the adhesive layer, an ultraviolet curable acrylic adhesive (Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd.) was used. Oligomer)) was prepared. Using the above-mentioned base material and pressure-sensitive adhesive, an ionomer film base material 11 as shown in FIG. 2 is applied on the base material by bar coating a solution obtained by dissolving an ultraviolet curable acrylic pressure-sensitive adhesive material in ethyl acetate. / A film for stealth dicing consisting of a multilayer structure of the adhesive layer 12 having a dry thickness of 20 ⁇ m was prepared.
  • an ultraviolet curable acrylic adhesive Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd. Oligomer
  • Examples 70 to 89 Using the stealth dicing films prepared in Examples 50 to 69, as shown in FIG. 3A, the adhesive layer 12 of each stealth dicing film 1 was fixed to the back surface of the wafer W, and the stealth dicing film 1 was The end of the adhesive layer 12 is brought into contact with the dicing table 6 and fixed to the dicing table. Next, the laser beam is irradiated from the base material 11 side of the dicing tape 1 and guided through the stealth dicing film 1, thereby modifying along the dicing line inside the wafer W as shown in FIG. 3B. A portion W1 is formed. Thereafter, as shown in FIG.
  • the end portion of the stealth dicing film 1 is pulled in the direction of the arrow to expand the film, and is divided into a plurality of portions starting from the modified portion W1. Thereafter, the adhesive layer 12 is irradiated with ultraviolet rays, and a plurality of chips are taken out to obtain a desired electronic component.

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Abstract

Provided is a substrate for stealth dicing film in which the thickness is within the range of 50 µm to 200 µm inclusive, the initial stress is within the range of 9 MPa to 19 MPa inclusive, the expansion rate is within the range of 102 % to 120 % inclusive, the haze value is 10 or less, and the total light transmittance is 90 % or more.

Description

[規則37.2に基づきISAが決定した発明の名称]　レーザーダイシング用フィルム基材、レーザーダイシング用フィルム、及び電子部品の製造方法[Name of invention determined by ISA based on Rule 37.2] Laser dicing film substrate, laser dicing film, and electronic component manufacturing method
　本発明は、ステルスダイシング用フィルム基材、並びにそれを用いたステルスダイシング用フィルム及び電子部品の製造方法に関する。 The present invention relates to a stealth dicing film substrate, and a stealth dicing film and an electronic component manufacturing method using the same.
　半導体ウエハをダイシングする際には、冷却水及び洗浄水を用いながらダイシングブレードによりウエハを切断し、次の拡張工程において、切断されたウエハに対応するダイシング用フィルムを拡張することにより、チップを小片化することが行なわれていた。この際、半導体ウエハをダイシング用フィルムにて固定し、チップの飛散を防止していた。 When dicing a semiconductor wafer, the wafer is cut by a dicing blade while using cooling water and cleaning water, and in the next expansion process, the dicing film corresponding to the cut wafer is expanded to form small chips. It was done. At this time, the semiconductor wafer was fixed with a dicing film to prevent chips from being scattered.
　一方、半導体ウエハのダイシング方法として、レーザ光により半導体ウエハをダイシングする方法が提案されている（例えば、特開２００７－２４５１７３号公報参照）。レーザ光を利用したダイシング法については、レーザをウエハ表面に集光、吸収させて溝を掘っていく表面アブレーション方式が古くから知られている。近年では、レーザ光をウエハ内部に集光して改質領域を形成した後、ウエハと対応するダイシング用フィルムを引っ張ることで、前記改質領域を起点としてウエハを分割する方法（例えば、ステルスダイシング法）が提案されている。 On the other hand, as a semiconductor wafer dicing method, a method of dicing a semiconductor wafer with a laser beam has been proposed (see, for example, Japanese Patent Application Laid-Open No. 2007-245173). As a dicing method using laser light, a surface ablation method in which a laser is focused on a wafer surface and absorbed to dig a groove has been known for a long time. In recent years, after forming a modified region by condensing laser light inside the wafer, a method of dividing the wafer from the modified region as a starting point by pulling a dicing film corresponding to the wafer (for example, stealth dicing) Law) has been proposed.
　レーザ光を利用したダイシング法において、レーザ光を、ダイシング用フィルムを介して照射する場合、照射されたレーザ光を阻害することなくウエハを分断するためには、ダイシング用フィルムが高い透明性を有していることが求められる。また、ダイシング用フィルムには、レーザ照射後のウエハの分断が良好に行なえる性状を有していることが求められる。 In the dicing method using laser light, when the laser light is irradiated through the dicing film, the dicing film has high transparency in order to divide the wafer without hindering the irradiated laser light. It is required to do. In addition, the dicing film is required to have a property that allows good division of the wafer after laser irradiation.
　上記事情との関連において、レーザ光を利用したダイシング法に関する技術としては、例えば、所定の引張弾性率や粘着力等を有する粘着層と、所定の引張弾性率を有する基材層とを含み、拡張率及びヘイズが所定の範囲にあるダイシングフィルムが開示されている（例えば、特開２０１１－６１０９７号公報参照）。このダイシングフィルムによれば、高い分断率が得られるとされている。 In relation to the above circumstances, as a technique related to the dicing method using laser light, for example, including an adhesive layer having a predetermined tensile elastic modulus and adhesive force, and a base material layer having a predetermined tensile elastic modulus, A dicing film having an expansion ratio and a haze in a predetermined range is disclosed (for example, see JP 2011-61097 A). According to this dicing film, it is said that a high division rate can be obtained.
　アイオノマーを用いたダイシング技術として、カリウムアイオノマーを含む層を備えたダイシングテープ用基材が開示されている（例えば、特開２０１１－４０４４９号公報参照）。このダイシングテープ用基材によれば、帯電防止性能に優れるとされている。また、アイオノマー樹脂をベースポリマーとし、所定の結晶分散剤が配合された基材シートと、粘着剤層と、を有する半導体ウエハ用のシートが開示されている（例えば、特開２０００－２７３４１６号公報及び特開２０００－３４５１２９号公報参照）。この半導体ウエハ用のシートによれば、エキスパンド均一性が得られるとされている。 As a dicing technique using an ionomer, a substrate for a dicing tape provided with a layer containing a potassium ionomer has been disclosed (for example, see JP2011-40449A). According to this base material for dicing tape, it is said that it is excellent in antistatic performance. Also disclosed is a semiconductor wafer sheet having a base material sheet containing an ionomer resin as a base polymer and a predetermined crystal dispersant blended therein, and an adhesive layer (for example, JP 2000-273416 A). And JP 2000-345129 A). According to this semiconductor wafer sheet, it is said that expanded uniformity can be obtained.
　また、アイオノマーを含む架橋樹脂を用いたダイシング技術としては、基材フィルムとしてビカット軟化点及び熱収縮による応力の増大を所定の範囲とすることで、加熱収縮工程の後に、緩みによる不具合を引き起こさないダイシングフィルムが記載されている（例えば、特開２０１１－２１６５０８号公報参照）。また、ヒゲ状切削屑の糸状化を防ぐ観点から、亜鉛やマグネシウム等の金属イオンで架橋されたアイオノマー樹脂を用いることが開示されている（例えば、特開２０１１－２１０８８７号公報参照）。 In addition, as a dicing technique using a cross-linked resin containing an ionomer, the base film does not cause problems due to loosening after the heat shrinking step by setting the Vicat softening point and the stress increase due to heat shrinkage to a predetermined range. A dicing film is described (for example, see JP 2011-216508 A). In addition, from the viewpoint of preventing thread-like shavings from being threaded, it is disclosed to use an ionomer resin crosslinked with a metal ion such as zinc or magnesium (see, for example, Japanese Patent Application Laid-Open No. 2011-210887).
　さらに、ＥＭＡＡを用いた３０μｍ厚の粘着剤塗布層と、低密度ポリエチレンを用いた３０μｍ厚のエキスパンドリング接触層との間に、結晶性ポリプロピレンを含有する４０μｍ厚の中間層が配置された３層構造のウエハダイシングテープ用基材が開示されている（例えば、特開２００３－１５８０９８号公報参照）。このウエハダイシングテープ用基材によれば、均一拡張性に優れるとされている。また、低密度ポリエチレンを用いた２層の間に、エチレン－メタクリル酸－（アクリル酸２－メチル－プロピル）３元共重合体又はその亜鉛アイオノマー樹脂を用いた中心層が配置された、３層構造の半導体ウエハ固定用粘着テープが開示されている（例えば、特開平７－２３０９７２号公報参照）。この半導体ウエハ固定用粘着テープによれば、エキスパンド時のネッキング及びピックアップピンへの付着が防止されるとされている。 Furthermore, three layers in which a 40 μm thick intermediate layer containing crystalline polypropylene is disposed between a 30 μm thick adhesive coating layer using EMAA and a 30 μm thick expanding ring contact layer using low density polyethylene A substrate for a wafer dicing tape having a structure has been disclosed (for example, see Japanese Patent Application Laid-Open No. 2003-158098). According to this wafer dicing tape substrate, it is said that it has excellent uniform expandability. In addition, a three-layer structure in which a central layer using an ethylene-methacrylic acid- (2-methyl-propyl acrylate) terpolymer or its zinc ionomer resin is disposed between two layers using low-density polyethylene. An adhesive tape for fixing a semiconductor wafer having a structure is disclosed (for example, see Japanese Patent Application Laid-Open No. 7-230972). According to this adhesive tape for fixing a semiconductor wafer, it is said that necking during expansion and adhesion to a pickup pin are prevented.
　しかしながら、特開２０１１－６１０９７号公報に記載のダイシング用フィルムについては、効率良く基板を分割する点で、ある程度の適性を有しており、特開２０１１－４０４４９号公報に記載のダイシングテープ用基材については、カリウムアイオノマーを用いることで帯電防止性能の向上が期待されるが、いずれも透明性又はウエハの分断性の点で、市場の要求に必ずしも適合していない場合がある。また、特開２０００－２７３４１６号公報及び特開２０００－３４５１２９号公報に記載されているシートは、ダイシングブレードによるダイシングを想定したものであり、レーザ光によるダイシングへの適用は難しい。さらに、特開２０１１－２１６５０８号公報には、ウエハ加工用粘着テープにアイオノマーを適用することに関する開示があるが、ブレードによるダイシング時の課題解消のための技術であり、レーザダイシング時の加工性までは予定されていない。 However, the dicing film described in Japanese Patent Application Laid-Open No. 2011-61097 has a certain degree of suitability in that the substrate is efficiently divided, and the substrate for dicing tape described in Japanese Patent Application Laid-Open No. 2011-40449 is disclosed. As for the materials, the use of potassium ionomer is expected to improve the antistatic performance, but none of the materials necessarily meet the market demands in terms of transparency or wafer fragmentation. In addition, the sheets described in Japanese Patent Laid-Open Nos. 2000-273416 and 2000-345129 are assumed to be diced with a dicing blade, and are difficult to apply to dicing with a laser beam. Furthermore, Japanese Patent Application Laid-Open No. 2011-216508 discloses a technique for applying an ionomer to an adhesive tape for wafer processing, but it is a technique for solving the problem at the time of dicing with a blade, up to the workability at the time of laser dicing. Is not planned.
　特開２０１１－２１０８８７号公報にも、ウエハ加工用粘着テープにアイオノマーを適用することに関する開示があるが、この開示もブレードによるダイシング時の課題解消のための技術であり、レーザダイシング時の加工性までは予定されていない。
　上記のように、ダイシング用フィルムのレーザ加工性については、更なる改良が期待されている。 Japanese Patent Application Laid-Open No. 2011-210887 also discloses the application of an ionomer to an adhesive tape for wafer processing. This disclosure is also a technique for solving the problem at the time of dicing with a blade, and the workability at the time of laser dicing is also disclosed. Until is not planned.
As described above, further improvement is expected for the laser processability of the dicing film.
　また、特開２００３－１５８０９８号公報に記載されているウエハダイシングテープ用基材では、積層構造を構成する中間層にポリプロピレン等のポリオレフィンが用いられている。一般にポリプロピレン等は伸長させる際の応力が極めて大きいため、特にステルスダイシング法でレーザ照射後にダイシング用フィルムをエキスパンドすると、ダイシング用フィルムを拡張したときに白化現象を招きやすい。逆に、３元共重合体を用いた層を中間層とした３層構造に構成する特開平７－２３０９７２号公報に記載の技術では、伸長初期における応力が小さくなり過ぎるため、ウエハの分断を良好に行なうことは難しい。この場合にウエハの分断性を高めるには、テープのエキスパンド量を増やす必要があるが、テープのエキスパンド量を増やすとテープ撓み量が増大する結果、搬送工程等に悪影響を及ぼす懸念がある。 In the substrate for wafer dicing tape described in JP-A-2003-158098, polyolefin such as polypropylene is used for the intermediate layer constituting the laminated structure. In general, polypropylene or the like has an extremely large stress when it is stretched. Therefore, when a dicing film is expanded after laser irradiation by a stealth dicing method, whitening is likely to occur when the dicing film is expanded. On the contrary, in the technique described in Japanese Patent Laid-Open No. 7-230972, which has a three-layer structure in which a layer using a terpolymer is an intermediate layer, the stress at the initial stage of elongation becomes too small, so that the wafer is divided. It is difficult to do well. In this case, it is necessary to increase the amount of expansion of the tape in order to improve the dividing property of the wafer. However, if the amount of expansion of the tape is increased, the amount of tape deflection increases, which may adversely affect the transport process and the like.
　このように、レーザ光を利用した従来のダイシング技術では、レーザ光を、ダイシング用フィルムを介して照射する場合、照射されたレーザ光をその吸収や散乱等の影響を受けずにウエハ内部に集光させる観点から、必ずしも十分な透明性を確保し得るに至っていないのが実情である。さらに、レーザ光照射位置を決める観点から、可視領域の透明性が必要となる。 As described above, in the conventional dicing technology using laser light, when the laser light is irradiated through the dicing film, the irradiated laser light is collected inside the wafer without being affected by absorption or scattering. From the viewpoint of making it light, it is the actual situation that sufficient transparency cannot be ensured. Furthermore, from the viewpoint of determining the laser beam irradiation position, transparency in the visible region is required.
　また、レーザ光を利用するステルスダイシング法では、レーザ照射後にダイシング用フィルムをエキスパンドすることによりダイシング用フィルムを均一に拡張し、ダイシング用フィルムに対応するウエハ内部のクラックを起点に分断する。このときの分断性を高めるためには、ダイシング用フィルムに必要とされる応力が、白化等他の性状に悪影響を与えることのない所定の範囲を充足していることが求められる。特にダイシング用フィルムの応力が不足している場合には、必ずしも充分な分断性は得られない。更にダイシング用フィルムには、帯電防止性を備えていることも要求される。 Also, in the stealth dicing method using laser light, the dicing film is expanded after the laser irradiation to uniformly expand the dicing film, and the cracks in the wafer corresponding to the dicing film are divided as starting points. In order to improve the division property at this time, it is required that the stress required for the dicing film satisfies a predetermined range that does not adversely affect other properties such as whitening. In particular, when the stress of the dicing film is insufficient, sufficient splitting properties cannot always be obtained. Further, the dicing film is required to have antistatic properties.
　本発明は、上記事情に鑑みてなされたものであり、レーザ光によるステルスダイシングに適しており、透明性とウエハ分断性とに優れたステルスダイシング用フィルム基材及びステルスダイシング用フィルム、並びにウエハ分断性に優れた電子部品の製造方法を提供するものである。 The present invention has been made in view of the above circumstances, is suitable for stealth dicing by laser light, and has excellent transparency and wafer division properties, and a stealth dicing film substrate and a stealth dicing film, and wafer division. The present invention provides a method for manufacturing an electronic component having excellent properties.
　ウエハの分断性とは、レーザ光を利用して形成されたウエハ内部の改質領域における分割のし易さである。ダイシング用フィルム基材は、９ＭＰａ以上１９ＭＰａ以下の範囲（好ましい下限値は１０ＭＰａを超える範囲）の応力をそなえながら１０２％以上の拡張性（拡張率）を有していることが良好な分断性を得る点で好ましい。 Wafer splitting is the ease of division in a modified region inside a wafer formed using laser light. The film substrate for dicing has good extensibility that it has expandability (expansion rate) of 102% or more while having a stress of 9 MPa or more and 19 MPa or less (preferable lower limit is a range exceeding 10 MPa). It is preferable in terms of obtaining.
　本発明者らは、粘着層と基材とを備えたステルスダイシング用フィルムを作製する際に設けられる前記基材（以下、「ステルスダイシング用フィルム基材」ということがある。）のウエハ分断性（すなわち初期応力）と拡張性とを改善するために検討を重ねた。本発明は、前記フィルム基材の厚みを適切な厚みに保持し、フィルム基材の初期応力及び拡張率を所定の範囲に調節することで、フィルム基材の分断性と拡張性とのバランスが図れるとの知見を得、かかる知見に基づいて達成されたものである。 The inventors of the present invention provide a wafer cutting property of the base material (hereinafter sometimes referred to as “stealth dicing film base material”) provided when producing a stealth dicing film including an adhesive layer and a base material. Studies were repeated to improve (ie initial stress) and expandability. The present invention maintains the thickness of the film base material at an appropriate thickness, and adjusts the initial stress and the expansion rate of the film base material to a predetermined range, so that the balance between the splitting property and the expandability of the film base material is achieved. It has been achieved based on such knowledge.
　前記課題を解決するための具体的手段は以下の通りである。
　＜１＞　粘着層と基材とを備えたステルスダイシング用フィルムの前記基材として用いられ、厚みが５０μｍ以上２００μｍ以下の範囲であり、初期応力が９ＭＰａ以上１９ＭＰａ以下の範囲であり、拡張率が１０２％以上１２０％以下の範囲であり、ヘイズ値が１０以下であり、全光線透過率が９０％以上であるステルスダイシング用フィルム基材である。
　＜２＞　エチレン・（メタ）アクリル酸系共重合体のマグネシウムアイオノマー及びエチレン・（メタ）アクリル酸系共重合体の亜鉛アイオノマーから選ばれ、共重合体中における（メタ）アクリル酸アルキルエステル由来の構成単位の共重合比が７質量％未満であるアイオノマー樹脂を含む＜１＞に記載のステルスダイシング用フィルム基材である。
　＜３＞　前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一方の、前記（メタ）アクリル酸由来の構成単位の共重合体中における共重合比が、１０質量％を超え３０質量％以下である＜２＞に記載のステルスダイシング用フィルム基材である。
　＜４＞前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一種は、中和度が０％を超えて６０％以下である＜２＞又は＜３＞に記載のステルスダイシング用フィルム基材である。
　＜５＞前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一種は、中和度が１０％以上４０％以下である＜２＞又は＜３＞に記載のステルスダイシング用フィルム基材である。 Specific means for solving the above problems are as follows.
<1> Used as the base material of a stealth dicing film provided with an adhesive layer and a base material. It is a film substrate for stealth dicing having a range of 102% to 120%, a haze value of 10 or less, and a total light transmittance of 90% or more.
<2> Selected from magnesium ionomer of ethylene / (meth) acrylic acid copolymer and zinc ionomer of ethylene / (meth) acrylic acid copolymer, derived from (meth) acrylic acid alkyl ester in the copolymer It is a film base material for stealth dicing as described in <1> containing the ionomer resin whose structural unit copolymerization ratio is less than 7 mass%.
<3> The copolymerization ratio in the copolymer of the structural unit derived from (meth) acrylic acid of at least one of the magnesium ionomer and the zinc ionomer is more than 10% by mass and 30% by mass or less. <2> The film substrate for stealth dicing described in 1.
<4> The stealth dicing film substrate according to <2> or <3>, wherein at least one of the magnesium ionomer and the zinc ionomer has a degree of neutralization of more than 0% and 60% or less.
<5> At least one of the magnesium ionomer and the zinc ionomer is the film substrate for stealth dicing according to <2> or <3>, which has a degree of neutralization of 10% to 40%.
　＜６＞　前記粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとが順に重層された重層構造、又は前記粘着層と接する層Ｘと第２の層Ｚと第１の層Ｙとが順に重層された重層構造を有し、前記層Ｘ、前記層Ｙ、及び前記層Ｚの厚みが１０μｍ以上１００μｍ以下の範囲である＜１＞に記載のステルスダイシング用フィルム基材である。
　＜７＞　前記粘着層と接する層Ｘが樹脂Ａを含み、前記樹脂Ａの曲げ剛性率が１００ＭＰａ以上３５０ＭＰａ以下の範囲であり、前記第１の層Ｙが樹脂Ｂを含み、前記樹脂Ｂの曲げ剛性率が５ＭＰａ以上３５０ＭＰａ以下の範囲であり、前記第２の層Ｚが樹脂Ｃを含み、前記樹脂Ｃの曲げ剛性率が５０ＭＰａ以上３５０ＭＰａ以下の範囲であり、
　前記樹脂Ａ又は前記樹脂Ｃの曲げ剛性率のそれぞれから前記樹脂Ｂの曲げ剛性率を差し引いた差の絶対値の大きい方の値が５０ＭＰａ以上３４５ＭＰａ以下の範囲内である＜６＞に記載のステルスダイシング用フィルム基材である。
　＜８＞　前記粘着層と接する層Ｘが樹脂Ａを含み、前記樹脂Ａが、エチレン・不飽和カルボン酸２元共重合体のアイオノマーである＜６＞又は＜７＞に記載のステルスダイシング用フィルム基材である。
　＜９＞　前記２元共重合体中における不飽和カルボン酸から導かれる構成単位の含有量は、１質量％以上３５質量％以下である＜８＞に記載のステルスダイシング用フィルム基材である。 <6> A multilayer structure in which the layer X, the first layer Y, and the second layer Z in contact with the adhesive layer are sequentially stacked, or the layer X, the second layer Z, and the first layer in contact with the adhesive layer The film substrate for stealth dicing according to <1>, wherein Y has a multilayer structure in which layers are sequentially stacked, and the thickness of the layer X, the layer Y, and the layer Z is in the range of 10 μm to 100 μm. .
<7> The layer X in contact with the adhesive layer contains the resin A, the bending rigidity of the resin A is in the range of 100 MPa to 350 MPa, the first layer Y contains the resin B, and the bending of the resin B The rigidity is in the range of 5 MPa to 350 MPa, the second layer Z includes the resin C, and the bending rigidity of the resin C is in the range of 50 MPa to 350 MPa.
Stealth according to <6>, wherein the larger absolute value of the difference obtained by subtracting the bending rigidity of the resin B from the bending rigidity of the resin A or the resin C is in the range of 50 MPa to 345 MPa. It is a film substrate for dicing.
<8> The stealth dicing film according to <6> or <7>, wherein the layer X in contact with the adhesive layer contains a resin A, and the resin A is an ionomer of an ethylene / unsaturated carboxylic acid binary copolymer. It is a substrate.
<9> The stealth dicing film substrate according to <8>, wherein the content of the structural unit derived from the unsaturated carboxylic acid in the binary copolymer is 1% by mass or more and 35% by mass or less.
　＜１０＞　前記第１の層Ｙが樹脂Ｂを含み、前記樹脂Ｂが、低密度ポリエチレン、直鎖状低密度ポリエチレン、エチレン酢酸ビニル共重合体、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、エチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸エステル２元共重合体から選ばれる少なくとも１種である＜６＞～＜９＞のいずれか１つに記載のステルスダイシング用フィルム基材である。
　＜１１＞　前記第２の層Ｚが樹脂Ｃを含み、前記樹脂Ｃが、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーから選ばれる少なくとも１種である＜６＞～＜１０＞のいずれか１つに記載のステルスダイシング用フィルム基材である。
　＜１２＞　融点が１５５℃以上１８５℃以下の帯電防止剤を含む＜１＞～＜１１＞のいずれか１つに記載のステルスダイシング用フィルム基材である。
　＜１３＞　表面抵抗率が、１×１０９Ω／sq以上１×１０１２Ω／sq以下である＜１＞～＜１２＞のいずれか１つに記載のステルスダイシング用フィルム基材である。 <10> The first layer Y includes a resin B, and the resin B is a low density polyethylene, a linear low density polyethylene, an ethylene vinyl acetate copolymer, an ethylene / unsaturated carboxylic acid binary copolymer, and <6> to <6> which is at least one selected from the ionomer, the ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid terpolymer and the ionomer, and the ethylene / unsaturated carboxylic acid terpolymer 9> The film substrate for stealth dicing according to any one of 9>.
<11> The second layer Z includes a resin C, and the resin C is an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary. The film substrate for stealth dicing according to any one of <6> to <10>, which is at least one selected from a copolymer and an ionomer thereof.
<12> The film substrate for stealth dicing according to any one of <1> to <11>, comprising an antistatic agent having a melting point of 155 ° C. or higher and 185 ° C. or lower.
<13> The film substrate for stealth dicing according to any one of <1> to <12>, which has a surface resistivity of 1 × 10 9 Ω / sq to 1 × 10 12 Ω / sq.
　＜１４＞　粘着層と、＜１＞～＜１３＞のいずれか１つに記載のステルスダイシング用フィルム基材とを備えたステルスダイシング用フィルムである。
　＜１５＞　ウエハの裏面に＜１４＞に記載のステルスダイシング用フィルムを貼り付ける工程と、前記ステルスダイシング用フィルムが貼り付けられたウエハに対し、前記ステルスダイシング用フィルム側からレーザ光を照射し、ステルスダイシング用フィルムを介してレーザ光により前記ウエハをダイシングする工程と、を含む電子部品の製造方法である。 <14> A stealth dicing film comprising an adhesive layer and the stealth dicing film substrate according to any one of <1> to <13>.
<15> The step of attaching the stealth dicing film according to <14> to the back surface of the wafer, and the wafer to which the stealth dicing film is attached is irradiated with laser light from the stealth dicing film side, And a step of dicing the wafer with a laser beam through a stealth dicing film.
　＜１６＞　厚みが５０μｍ以上２００μｍ以下の範囲であり、初期応力が９ＭＰａ以上１９ＭＰａ以下の範囲であり、拡張率が１０２％以上１２０％以下の範囲であり、ヘイズ値が１０以下であり、全光線透過率が９０％以上であるフィルム基材を、ステルスダイシング用フィルムの基材として使用する方法である。
　＜１７＞　ステルスダイシング用フィルムの製造のためのフィルム基材の使用であって、厚みが５０μｍ以上２００μｍ以下の範囲であり、初期応力が９ＭＰａ以上１９ＭＰａ以下の範囲であり、拡張率が１０２％以上１２０％以下の範囲であり、ヘイズ値が１０以下であり、全光線透過率が９０％以上であるフィルム基材の使用である。 <16> The thickness is in the range of 50 μm to 200 μm, the initial stress is in the range of 9 MPa to 19 MPa, the expansion rate is in the range of 102% to 120%, the haze value is 10 or less, the total light In this method, a film substrate having a transmittance of 90% or more is used as a substrate for a stealth dicing film.
<17> Use of a film base material for producing a film for stealth dicing, wherein the thickness is in the range of 50 μm to 200 μm, the initial stress is in the range of 9 MPa to 19 MPa, and the expansion rate is 102% or more This is the use of a film substrate having a range of 120% or less, a haze value of 10 or less, and a total light transmittance of 90% or more.
　なお、本明細書において「～」を用いて表される数値範囲は、「～」の前後に記載される数値を下限値及び上限値として含む範囲を意味する。 In the present specification, a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
　本発明によれば、レーザ光によるダイシングに適しており、透明性とウエハ分断性とに優れたステルスダイシング用フィルム基材及びステルスダイシング用フィルムが提供される。また、本発明によれば、ウエハ分断性に優れた電子部品の製造方法が提供される。 According to the present invention, there are provided a stealth dicing film base material and a stealth dicing film which are suitable for dicing with a laser beam and which are excellent in transparency and wafer cutting property. In addition, according to the present invention, a method for manufacturing an electronic component excellent in wafer cutting property is provided.
本発明の一実施形態に係るステルスダイシング用フィルムの構成例を示す概略断面図である。It is a schematic sectional drawing which shows the structural example of the film for stealth dicing which concerns on one Embodiment of this invention. 図１のステルスダイシング用フィルム基材の他の構成例を示す概略断面図である。It is a schematic sectional drawing which shows the other structural example of the film base material for stealth dicing of FIG. ウエハのダイシングに際し、ステルスダイシング用フィルムを介してレーザ光を照射しているところを示す概略図である。It is the schematic which shows the place which has irradiated the laser beam through the film for stealth dicing in the case of dicing of a wafer. ウエハのダイシングに際し、ウエハに改質部が形成された状態を示す概略図である。It is the schematic which shows the state in which the modification part was formed in the wafer in the case of dicing of a wafer. ステルスダイシング用フィルムに外部応力を与えてウエハを複数のチップに分離するところを示す概略図である。It is the schematic which shows the place which gives external stress to the film for stealth dicing, and isolate | separates a wafer into a some chip | tip.
　以下、本発明のステルスダイシング用フィルム基材、並びにこれを用いたステルスダイシング用フィルム及び電子部品の製造方法について、図面を参照して説明する。 Hereinafter, a stealth dicing film substrate of the present invention, and a stealth dicing film and an electronic component manufacturing method using the same will be described with reference to the drawings.
［ステルスダイシング用フィルム基材及びステルスダイシング用フィルム］
　図１～図４を参照して、ステルスダイシング用フィルム１について説明し、該説明を通じて本発明のステルスダイシング用フィルム基材について詳述する。図１は、ステルスダイシング用フィルムの構成例を示す概略断面図である。 [Stealth dicing film substrate and stealth dicing film]
The stealth dicing film 1 will be described with reference to FIGS. 1 to 4, and the stealth dicing film substrate of the present invention will be described in detail through the description. FIG. 1 is a schematic cross-sectional view showing a configuration example of a stealth dicing film.
　ステルスダイシングは、シリコンウエハの内部にレーザを集光することでウエハ内に改質層（クラック等）を形成し、テープエキスパンド等で外部応力を与えてチップ分割を行なうダイシング方法である。 Stealth dicing is a dicing method in which a laser is focused inside a silicon wafer to form a modified layer (crack or the like) in the wafer and external stress is applied by tape expanding or the like to divide the chip.
　図１に示すように、ステルスダイシング用フィルム１は、ステルスダイシング用フィルム基材１１（以下、基材１１という。）と、基材１１上に設けられた粘着層１２とを備えている。
　基材１１は、単層又は多層のいずれに構成されてもよい。基材１１が多層に構成される場合、基材１１は、例えば図２に示すように、ステルスダイシング用フィルムを構成する粘着層１２と接する層１１Ｘと中間層１１Ｙ（又は１１Ｚ）と内層１１Ｚ（又は１１Ｙ）とを重層した３層構造を含む構造に構成することができる。 As shown in FIG. 1, the stealth dicing film 1 includes a stealth dicing film base material 11 (hereinafter referred to as a base material 11) and an adhesive layer 12 provided on the base material 11.
The substrate 11 may be configured as either a single layer or a multilayer. When the base material 11 is configured in multiple layers, for example, as shown in FIG. 2, the base material 11 includes a layer 11 </ b> X, an intermediate layer 11 </ b> Y (or 11 </ b> Z), and an inner layer 11 </ b> Z (in contact with the adhesive layer 12 constituting the stealth dicing film). Alternatively, a structure including a three-layer structure in which 11Y) is stacked may be used.
　ステルスダイシング法では、ダイシング用フィルムの伸長力を利用し、ウエハをチップ化する。近年注目されているステルスダイシング法では、微小サイズの半導体チップを生産する場合、従来から広く利用されているブレードダイシングやレーザダイシングに使用されているダイシングシートがそのまま用いられてきた。しかしながら、このような従来のダイシングシートを使用すると、拡張初期の強度（初期応力）が低過ぎる場合がある。フィルムの初期応力があまり低すぎると、ウエハ内部に形成された改質部に伸長力が充分に伝達しないため、ウエハをチップ化することが困難となる。すなわち、初期応力が充分に得られないフィルムでは、各チップをダイシングラインで分割することができず、チップが複数個繋がった状態となり、半導体チップの生産歩留まりが低下するおそれがある。そのため、本発明においては、ステルスダイシング用フィルム基材のウエハ分断性（すなわち初期強度（初期応力ともいう））及び拡張性を改善するため、前記基材の厚みを所定の厚みに保持し、前記基材の初期応力及び拡張率を所定の範囲に調節することで、分断性と拡張性とのバランスが図られている。
　特に基材が多層に構成される場合、前記同様にウエハ分断性（初期強度）及び拡張性を改善するため、粘着層に接する層Ｘに対して層１１Ｙ（第１の層Ｙ）と層１１Ｚ（第２の層Ｚ）とを重層するようにし、基材の初期応力を９ＭＰａ以上１９ＭＰａ以下の範囲に調整することで、分断性と拡張性とのバランスが図られる。また、本発明のフィルム基材は、重層構造としながら、層の透明性は維持されており、レーザの拡散や吸収が少なく、ステルスダイシングによる加工適性に優れている。 In the stealth dicing method, the wafer is made into chips by utilizing the extension force of the dicing film. In the stealth dicing method which has been attracting attention in recent years, dicing sheets used for blade dicing and laser dicing which have been widely used in the past have been used as they are when producing micro-sized semiconductor chips. However, when such a conventional dicing sheet is used, the initial expansion strength (initial stress) may be too low. If the initial stress of the film is too low, the extension force is not sufficiently transmitted to the modified portion formed inside the wafer, so that it becomes difficult to chip the wafer. That is, in a film in which initial stress cannot be obtained sufficiently, each chip cannot be divided by a dicing line, and a plurality of chips are connected, which may reduce the production yield of semiconductor chips. Therefore, in the present invention, in order to improve the wafer severability (that is, initial strength (also referred to as initial stress)) and expandability of the film substrate for stealth dicing, the thickness of the substrate is maintained at a predetermined thickness, By adjusting the initial stress and the expansion rate of the base material to a predetermined range, a balance between breakability and expandability is achieved.
In particular, when the substrate is composed of multiple layers, the layer 11Y (first layer Y) and the layer 11Z with respect to the layer X in contact with the adhesive layer in order to improve the wafer severability (initial strength) and expandability as described above. By balancing the (second layer Z) and adjusting the initial stress of the base material to a range of 9 MPa or more and 19 MPa or less, a balance between the breakability and the expandability can be achieved. In addition, the film substrate of the present invention has a multi-layer structure, but the transparency of the layer is maintained, laser diffusion and absorption are small, and the processing suitability by stealth dicing is excellent.
　ステルスダイシング用フィルム１は、一方面が粘着面に構成され、レーザ光の照射によりウエハに形成されたクラックを起点に非接触でウエハを分断（分離）する、いわゆるステルスダイシングに用いられる。具体的には、図３Ａに示すように、ステルスダイシング用フィルム１をダイシングテーブル６上に置いてウエハＷの裏面に貼り付け、ステルスダイシング用フィルム１を介してレーザを照射する。レーザ照射によりウエハＷの内部にレーザ光Ｌを導光し、図３Ｂに示すように、レーザ光によりウエハＷの内部に改質領域Ｗ１を複数形成する。その後、図４に示すように、ステルスダイシング用フィルム１に外部応力を与えて矢印方向に拡張することにより、前記改質領域Ｗ１を起点にウエハＷを個々のチップに分離する。 The stealth dicing film 1 is used for so-called stealth dicing, in which one surface is formed as an adhesive surface, and the wafer is divided (separated) in a non-contact manner starting from a crack formed in the wafer by laser light irradiation. Specifically, as shown in FIG. 3A, the stealth dicing film 1 is placed on the dicing table 6 and attached to the back surface of the wafer W, and laser is irradiated through the stealth dicing film 1. Laser light L is guided inside the wafer W by laser irradiation, and a plurality of modified regions W1 are formed inside the wafer W by the laser light as shown in FIG. 3B. Thereafter, as shown in FIG. 4, the wafer W is separated into individual chips starting from the modified region W1 by applying an external stress to the stealth dicing film 1 and expanding it in the direction of the arrow.
　なお、ステルスダイシング用フィルム１は、上記のステルスダイシングのみならず、ダイシングブレードによるダイシング方法やレーザ光を利用した他のダイシング方法にも適用可能である。 The stealth dicing film 1 can be applied not only to the above stealth dicing but also to a dicing method using a dicing blade and other dicing methods using laser light.
（基材）
　基材は、単層又は２層以上の多層のいずれに構成されてもよい。
～Ａ．単層構成～
　まず、基材が単層構造に構成されている場合を説明する。
　図１は、基材１１が単層構造に構成された例を示す。図１では、基材１１は、エチレン・（メタ）アクリル酸系共重合体のマグネシウムアイオノマー及び／又はエチレン・（メタ）アクリル酸系共重合体の亜鉛アイオノマーを用いて形成されたアイオノマー樹脂基材である。 (Base material)
The substrate may be configured as either a single layer or a multilayer of two or more layers.
~ A. Single layer configuration ~
First, the case where the base material is configured in a single layer structure will be described.
FIG. 1 shows an example in which the substrate 11 is configured in a single layer structure. In FIG. 1, the base material 11 is an ionomer resin base material formed using a magnesium ionomer of an ethylene / (meth) acrylic acid copolymer and / or a zinc ionomer of an ethylene / (meth) acrylic acid copolymer. It is.
　マグネシウムアイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部がマグネシウムで中和されたマグネシウムアイオノマーが好ましい。共重合体においては、ブロック共重合体、ランダム共重合体、グラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体、３元ランダム共重合体、２元ランダム共重合体のグラフト共重合体あるいは３元ランダム共重合体のグラフト共重合体を使用するのが好ましく、より好ましくは２元ランダム共重合体又は３元ランダム共重合体である。 The magnesium ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. A magnesium ionomer partially neutralized with magnesium is preferred. The copolymer may be any of a block copolymer, a random copolymer, and a graft copolymer, but in consideration of transparency, a binary random copolymer, a ternary random copolymer, a binary It is preferable to use a graft copolymer of a random copolymer or a graft copolymer of a ternary random copolymer, more preferably a binary random copolymer or a ternary random copolymer.
　前記アイオノマー樹脂のうち、好適なマグネシウムアイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、マグネシウムイオンで中和したものである。マグネシウムイオンによる中和度は０％を超えて６０％の範囲であり、この範囲では拡張性と分断性とに優れる。好ましい中和度は１０％以上６０％以下の範囲であり、この範囲内であると透明性に優れる。更に好ましい中和度は１０％以上４０％以下の範囲であり、この範囲内であると拡張性、分断性及び透明性のバランスに優れる。
　中でも、マグネシウムアイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 Among the ionomer resins, a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass. In the range of more than 30% by mass and neutralized with magnesium ions. The degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent. The degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range. Furthermore, the preferable neutralization degree is in the range of 10% to 40%, and within this range, the balance of expandability, splitting property and transparency is excellent.
Among them, the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　亜鉛アイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部が亜鉛で中和された亜鉛アイオノマーが好ましい。共重合体は、前記マグネシウムアイオノマーと同様、ブロック共重合体、ランダム共重合体、又はグラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体、３元ランダム共重合体、２元ランダム共重合体のグラフト共重合体あるいは３元ランダム共重合体のグラフト共重合体が好ましく、より好ましくは２元ランダム共重合体又は３元ランダム共重合体である。 The zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. Zinc ionomers partially neutralized with zinc are preferred. The copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer. However, in consideration of transparency, the copolymer is a binary random copolymer or a ternary random copolymer. A copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable, and a binary random copolymer or a ternary random copolymer is more preferable.
　好適な亜鉛アイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、亜鉛イオンで中和したものである。亜鉛イオンによる中和度は０％を超えて６０％の範囲であり、この範囲では拡張性と分断性とに優れる。好ましい中和度は１０％以上６０％以下の範囲であり、この範囲内であると透明性に優れる。更に好ましい中和度は１０％以上４０％以下の範囲あり、この範囲内であると拡張性、分断性及び透明性のバランスに優れる。
　中でも、亜鉛アイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 A suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass. The following range was neutralized with zinc ions. The degree of neutralization with zinc ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent. The degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range. Furthermore, the preferable neutralization degree is in the range of 10% or more and 40% or less.
Among them, the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　アイオノマーを構成するエチレン・（メタ）アクリル酸系共重合体は、少なくともエチレンとアクリル酸又はメタクリル酸とが共重合した共重合体であり、さらに第３の共重合成分が共重合した３元以上の多元共重合体であってもよい。 The ethylene / (meth) acrylic acid copolymer constituting the ionomer is a copolymer in which at least ethylene and acrylic acid or methacrylic acid are copolymerized, and further a ternary or more in which a third copolymerization component is copolymerized. It may be a multi-component copolymer.
　多元共重合体を形成するモノマーとしては、エチレン及び該エチレンと共重合可能な前記（メタ）アクリル酸のほかに、第３の共重合成分として、不飽和カルボン酸エステル（例えば、アクリル酸メチル、アクリル酸エチル、アクリル酸イソブチル、アクリル酸ｎ－ブチル、アクリル酸イソオクチル、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸イソブチル、マレイン酸ジメチル、マレイン酸ジエチル等の（メタ）アクリル酸アルキルエステル）、ビニルエステル（例えば、酢酸ビニル、プロピオン酸ビニル等）、不飽和炭化水素（例えば、プロピレン、ブテン、１，３－ブタジエン、ペンテン、１，３－ペンタジエン、１－ヘキセン等）、ビニル硫酸やビニル硝酸等の酸化物、ハロゲン化合物（例えば、塩化ビニル、フッ化ビニル等）、ビニル基含有１，２級アミン化合物、一酸化炭素、二酸化硫黄等が共重合されていてもよい。
　中でも、前記第３の共重合成分としては、不飽和カルボン酸エステルが好ましく、（メタ）アクリル酸アルキルエステル（アルキル部位の好ましい炭素数は１～４）がより好ましい。 In addition to ethylene and the (meth) acrylic acid copolymerizable with ethylene, the third copolymerization component includes unsaturated carboxylic acid esters (for example, methyl acrylate, (Meth) acrylic acid alkyl esters such as ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, diethyl maleate), vinyl esters (Eg, vinyl acetate, vinyl propionate, etc.), unsaturated hydrocarbons (eg, propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl sulfuric acid, vinyl nitric acid, etc. Oxides, halogen compounds (eg, vinyl chloride, vinyl fluoride) Le), vinyl group-containing 1,2 amine compounds, carbon monoxide, may be sulfur dioxide and the like have been copolymerized.
Among these, as the third copolymer component, an unsaturated carboxylic acid ester is preferable, and a (meth) acrylic acid alkyl ester (preferably having 1 to 4 carbon atoms in the alkyl moiety) is more preferable.
　前記第３の共重合成分に由来の構成単位のエチレン・（メタ）アクリル酸系共重合体中における含有比率は、７質量％未満の範囲が好ましい。
　本発明におけるアイオノマー樹脂は、不飽和カルボン酸エステルを含んでもよいが、特に（メタ）アクリル酸アルキルエステル由来の構成単位の共重合体中に占める含有比率を７質量％未満とすることが好ましい。（メタ）アクリル酸アルキルエステル由来の構成単位の含有比率が７質量％未満であると、ダイシング用フィルムの応力を保つのでより優れた分断性が得られる。（メタ）アクリル酸アルキルエステル由来の構成単位の含有比率としては、５質量％以下とすることが好ましく、（メタ）アクリル酸アルキルエステル由来の構成単位を有しない（含有比率：ゼロ％［質量比］）ことがより好ましい。 The content ratio of the structural unit derived from the third copolymer component in the ethylene / (meth) acrylic acid copolymer is preferably less than 7% by mass.
The ionomer resin in the present invention may contain an unsaturated carboxylic acid ester, but the content ratio of the constituent unit derived from the (meth) acrylic acid alkyl ester in the copolymer is preferably less than 7% by mass. When the content ratio of the structural unit derived from the (meth) acrylic acid alkyl ester is less than 7% by mass, the stress of the dicing film is maintained, so that more excellent fragmentation can be obtained. The content ratio of the structural unit derived from the (meth) acrylic acid alkyl ester is preferably 5% by mass or less, and does not have the structural unit derived from the (meth) acrylic acid alkyl ester (content ratio: zero% [mass ratio ]) Is more preferable.
～Ｂ．多層構成～
　次に、基材が多層構造に構成されている場合を説明する。
　基材１１は、図２に示すように、粘着層１２と接する層１１Ｘと層１１Ｙ（第１の層Ｙ）と層１１Ｚ（第２の層Ｚ）とが少なくともこの順に重層された重層構造、及び前記粘着層１２と接する層Ｘと層１１Ｚ（第２の層Ｚ）と層１１Ｙ（第１の層Ｙ）とが少なくともこの順に重層された重層構造から選ばれる３層以上からなる多層構造を設けて構成することができる。 ~ B. Multi-layer configuration
Next, a case where the base material has a multilayer structure will be described.
As shown in FIG. 2, the base material 11 has a multilayer structure in which a layer 11X, a layer 11Y (first layer Y), and a layer 11Z (second layer Z) in contact with the adhesive layer 12 are stacked at least in this order, And a multilayer structure composed of three or more layers selected from a multilayer structure in which the layer X, the layer 11Z (second layer Z), and the layer 11Y (first layer Y) in contact with the adhesive layer 12 are stacked at least in this order. It can be provided and configured.
　基材１１は、図２に示すように、その一方の側においてウエハを固定化するための粘着層１２と接触させることで、ステルスダイシング用フィルムを構成することができる。ステルスダイシング用フィルムとした場合、粘着層１２は、図２に示すように、基材１１の重層構造における「粘着層と接する層１１Ｘ」と密着される。そのため、粘着層と接する層１１Ｘは、重層構造の表層（最外層）に位置するように設けられている。 As shown in FIG. 2, the base material 11 can constitute a stealth dicing film by bringing it into contact with an adhesive layer 12 for fixing the wafer on one side thereof. In the case of a stealth dicing film, the adhesive layer 12 is in close contact with the “layer 11X in contact with the adhesive layer” in the multilayer structure of the substrate 11, as shown in FIG. Therefore, the layer 11X in contact with the adhesive layer is provided so as to be positioned on the surface layer (outermost layer) of the multilayer structure.
　基材１１が、粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとがこの順に配された重層構造を有している場合、第１の層Ｙが３層構造を形成する中間層をなす。また、この重層構造は、粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとの３層に加え、粘着層と接する層Ｘと第１の層Ｙの間又は第１の層Ｙと第２の層Ｚの間、あるいは粘着層と接する層Ｘ／第１の層Ｙ／第２の層Ｚの３層構造の一端である第２の層Ｚ上に、さらに他の層が設けられて４層以上の重層構造に構成されてもよい。 When the substrate 11 has a multilayer structure in which the layer X in contact with the adhesive layer, the first layer Y, and the second layer Z are arranged in this order, the first layer Y forms a three-layer structure. Make an intermediate layer. In addition to the three layers of the layer X, the first layer Y, and the second layer Z that are in contact with the adhesive layer, the multilayer structure is formed between the layer X and the first layer Y that is in contact with the adhesive layer or the first layer Y. Another layer on the second layer Z, which is one end of the three-layer structure of the layer X / the first layer Y / the second layer Z between the layer Y and the second layer Z or in contact with the adhesive layer May be provided to form a multilayer structure of four or more layers.
　また、基材１１は、粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとを有する重層構造の他の態様として、第１の層Ｙと第２の層Ｚとが逆に配置され、粘着層と接する層Ｘと第２の層Ｚと第１の層Ｙとがこの順に配された重層構造に構成されてもよい。この場合、第２の層Ｚが３層構造を形成する中間層をなす。この重層構造の場合も上記構造の場合と同様に、粘着層と接する層Ｘと第２の層Ｚの間又は第２の層Ｚと第１の層Ｙの間、あるいは粘着層と接する層Ｘ／第２の層Ｚ／第１の層Ｙの３層構造の一端である第１の層Ｙ上に、さらに他の層が設けられて４層以上の重層構造に構成されてもよい。 Moreover, as for the base material 11, the 1st layer Y and the 2nd layer Z are reverse as another aspect of the multilayer structure which has the layer X which touches the adhesion layer, the 1st layer Y, and the 2nd layer Z. The layer X, the second layer Z, and the first layer Y, which are disposed in contact with the adhesive layer, may be configured in a multilayer structure in this order. In this case, the second layer Z forms an intermediate layer forming a three-layer structure. In the case of this multi-layer structure, as in the case of the above-described structure, the layer X between the layer X and the second layer Z in contact with the adhesive layer, the second layer Z and the first layer Y, or the layer X in contact with the adhesive layer. On the first layer Y that is one end of the three-layer structure of / second layer Z / first layer Y, another layer may be provided to form a multilayer structure of four or more layers.
［粘着層と接する層Ｘ］
　粘着層と接する層Ｘは、図２に示すようにウエハを固定化するための、例えば粘着剤からなる粘着層１２と密着される層であり、少なくとも樹脂（本明細書中において「樹脂Ａ」ともいう）を含有する。密着の方法としては、層Ｘ面に粘着剤を公知の方法、例えばグラビアロールコーター、リバースロールコーター、キスロールコーター、ディップロールコーター、バーコーター、ナイフコーター、スプレーコーター等を用いて直接塗布する方法、あるいは剥離シート上に粘着剤を上記公知の方法で塗布して粘着層を設けた後、これを層Ｘに貼着し、粘着層を転写する方法等を用いることができる。層Ｘの樹脂Ａとしては、極性を有し、紫外線硬化性に好適に構成される粘着層１２の粘着剤と相性のよい樹脂が好ましく用いられる。粘着層１２は、後述するように紫外線硬化性に構成された層が好適であり、このような場合は紫外線硬化性の組成と良好な密着が保てる樹脂を用いて好適に構成することができる。 [Layer X in contact with adhesive layer]
The layer X in contact with the adhesive layer is a layer that is in close contact with the adhesive layer 12 made of, for example, an adhesive for fixing the wafer as shown in FIG. 2, and at least a resin (“resin A” in the present specification). (Also called). As an adhesion method, a method of directly applying an adhesive to the layer X surface using a known method such as a gravure roll coater, reverse roll coater, kiss roll coater, dip roll coater, bar coater, knife coater, spray coater, etc. Alternatively, it is possible to use a method in which a pressure-sensitive adhesive is coated on the release sheet by the above-mentioned known method to provide a pressure-sensitive adhesive layer, which is then adhered to the layer X, and the pressure-sensitive adhesive layer is transferred. As the resin A of the layer X, a resin having polarity and compatibility with the pressure-sensitive adhesive of the pressure-sensitive adhesive layer 12 that is suitably configured for ultraviolet curing is preferably used. As described later, the adhesive layer 12 is preferably an ultraviolet curable layer. In such a case, the adhesive layer 12 can be preferably configured using a resin capable of maintaining an ultraviolet curable composition and good adhesion.
　粘着層と接する層Ｘは、樹脂Ａを含む。前記樹脂Ａの曲げ剛性率としては、１００ＭＰａ以上３５０ＭＰａ以下の範囲であることが好ましい。樹脂Ａの曲げ剛性率が前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。中でも、樹脂Ａの曲げ剛性率は、ウエハ分断性の点で、１５０ＭＰａ以上３５０ＭＰａ以下がより好ましく、１８０ＭＰａ以上３５０ＭＰａ以下が更に好ましい。 The layer X in contact with the adhesive layer contains the resin A. The flexural modulus of the resin A is preferably in the range of 100 MPa to 350 MPa. The bending rigidity of the resin A being within the above range indicates that it is suitable for processing by stealth dicing (partition processing, particularly maintenance of initial stress). Among them, the bending rigidity of the resin A is more preferably 150 MPa or more and 350 MPa or less, and further preferably 180 MPa or more and 350 MPa or less in terms of wafer dividing property.
　粘着層と接する層Ｘに含まれる樹脂Ａとしては、熱可塑性樹脂が好ましく、より好ましくはオレフィン系重合体であり、例えばエチレン及び不飽和カルボン酸を共重合成分として含むエチレン・不飽和カルボン酸系共重合体である。この中でもエチレンと不飽和カルボン酸とが共重合した２元共重合体（エチレン・不飽和カルボン酸２元共重合体）のアイオノマーが好適に用いられる。エチレン・不飽和カルボン酸２元共重合体のアイオノマーを用いることで、透明性（ヘイズ及び全光線透過率）及び分断性に優れる。 The resin A contained in the layer X in contact with the adhesive layer is preferably a thermoplastic resin, more preferably an olefin polymer, for example, an ethylene / unsaturated carboxylic acid system containing ethylene and an unsaturated carboxylic acid as a copolymerization component. It is a copolymer. Among these, an ionomer of a binary copolymer (ethylene / unsaturated carboxylic acid binary copolymer) obtained by copolymerizing ethylene and an unsaturated carboxylic acid is preferably used. By using an ionomer of an ethylene / unsaturated carboxylic acid binary copolymer, it is excellent in transparency (haze and total light transmittance) and fragmentability.
　アイオノマーのベースポリマーとなる前記エチレン・不飽和カルボン酸２元共重合体において、不飽和カルボン酸から導かれる構成単位の含有割合は、１質量％以上３５質量％以下の範囲が好ましく、５質量％以上２５質量％以下の範囲がより好ましく、特に好ましくは１０質量％以上２０質量％以下の範囲である。不飽和カルボン酸から導かれる構成単位の含有割合が１質量％以上であることは、この構成単位を積極的に含むことを意味し、不飽和カルボン酸の含有により透明性や接着性が良好になる。不飽和カルボン酸から導かれる構成単位の含有割合が３５質量％以下であることで、実用的な耐熱性が維持される。
　また、エチレンから導かれる構成単位の含有割合としては、９９質量％以上６５質量％以下の範囲が好ましく、より好ましくは９０質量％以上８０質量％以下の範囲である。 In the ethylene / unsaturated carboxylic acid binary copolymer serving as the base polymer of the ionomer, the content of the structural unit derived from the unsaturated carboxylic acid is preferably in the range of 1% by mass to 35% by mass, and preferably 5% by mass. The range of 25% by mass or less is more preferable, and the range of 10% by mass or more and 20% by mass or less is particularly preferable. When the content ratio of the structural unit derived from the unsaturated carboxylic acid is 1% by mass or more, this means that the structural unit is positively contained, and transparency and adhesion are improved due to the inclusion of the unsaturated carboxylic acid. Become. Practical heat resistance is maintained by the content rate of the structural unit guide | induced from unsaturated carboxylic acid being 35 mass% or less.
Moreover, as a content rate of the structural unit guide | induced from ethylene, the range of 99 to 65 mass% is preferable, More preferably, it is the range of 90 to 80 mass%.
　エチレン・不飽和カルボン酸２元共重合体を構成する不飽和カルボン酸としては、例えば、アクリル酸、メタクリル酸、マレイン酸、フマル酸、無水マレイン酸、マレイン酸モノエステル等が挙げられ、特に、アクリル酸又はメタクリル酸が好ましい。 Examples of the unsaturated carboxylic acid constituting the ethylene / unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoester, and the like. Acrylic acid or methacrylic acid is preferred.
　アイオノマーのベースポリマーとなる２元共重合体中のカルボキシル基を中和する金属イオンとしては、例えば、リチウムイオン、ナトリウムイオン、カリウムイオン等のアルカリ金属イオン；マグネシウムイオン、カルシウムイオン、亜鉛イオン、アルミニウムイオン等の多価金属のイオン等が挙げられる。
　これらの中でも、マグネシウムイオン又は亜鉛イオンがより好ましい。これら金属イオンは１種単独で用いてもよいし、２種以上を組み合わせて用いてもよい。アイオノマーは、２元共重合体中のカルボキシル基の１００％以下の範囲で前記金属イオンにより中和され、その中和度は９０％以下が好ましく、より好ましくは２０％以上８５％以下の範囲である。 Examples of metal ions that neutralize the carboxyl group in the binary copolymer that is the base polymer of the ionomer include alkali metal ions such as lithium ions, sodium ions, and potassium ions; magnesium ions, calcium ions, zinc ions, and aluminum. And ions of polyvalent metals such as ions.
Among these, magnesium ion or zinc ion is more preferable. These metal ions may be used alone or in combination of two or more. The ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the degree of neutralization is preferably 90% or less, more preferably in the range of 20% or more and 85% or less. is there.
　マグネシウムアイオノマーとしては、エチレン・（メタ）アクリル酸共重合体の少なくとも一部がマグネシウムで中和されたマグネシウムアイオノマーが好ましい。共重合体においては、ブロック共重合体、ランダム共重合体、又はグラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体が好ましい。 As the magnesium ionomer, a magnesium ionomer in which at least a part of the ethylene / (meth) acrylic acid copolymer is neutralized with magnesium is preferable. The copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer, but a binary random copolymer is preferable in consideration of transparency.
　前記アイオノマー樹脂のうち、好適なマグネシウムアイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、マグネシウムイオンで中和したものである。マグネシウムイオンによる中和度は０％を超えて６０％の範囲であり、この範囲では拡張性と分断性とに優れる。好ましい中和度は１０％以上６０％以下の範囲であり、この範囲内であると透明性に優れる。更に好ましい中和度は１０％以上４０％以下の範囲あり、この範囲内であると拡張性、分断性、及び透明性のバランスに優れる。
　中でも、マグネシウムアイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 Among the ionomer resins, a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass. In the range of more than 30% by mass and neutralized with magnesium ions. The degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent. The degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range. Furthermore, the preferable neutralization degree is in the range of 10% or more and 40% or less.
Among them, the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　亜鉛アイオノマーとしては、エチレン・（メタ）アクリル酸共重合体の少なくとも一部が亜鉛で中和された亜鉛アイオノマーが好ましい。共重合体は、前記マグネシウムアイオノマーと同様、ブロック共重合体、ランダム共重合体、又はグラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体が好ましい。 As the zinc ionomer, a zinc ionomer in which at least a part of the ethylene / (meth) acrylic acid copolymer is neutralized with zinc is preferable. The copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer, but a binary random copolymer is preferable in consideration of transparency.
　好適な亜鉛アイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、亜鉛イオンで中和したものである。亜鉛イオンによる中和度は０％を超えて９０％の範囲であり、この範囲では拡張性と分断性とに優れる。好ましい中和度は１０％以上９０％以下の範囲であり、この範囲内であると透明性に優れる。
　中でも、亜鉛アイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 A suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass. The following range was neutralized with zinc ions. The degree of neutralization with zinc ions is in the range of more than 0% to 90%, and in this range, extensibility and severability are excellent. The degree of neutralization is preferably in the range of 10% or more and 90% or less, and transparency is excellent in this range.
Among them, the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　粘着層と接する層Ｘを形成するアイオノマーとしては、入手のしやすさの点で、エチレン・アクリル酸共重合体のマグネシウム（Ｍｇ）アイオノマー又は亜鉛（Ｚｎ）アイオノマー、及びエチレン・メタクリル酸共重合体のマグネシウム（Ｍｇ）アイオノマー又は亜鉛（Ｚｎ）アイオノマーが好ましい。 As the ionomer forming the layer X in contact with the adhesive layer, an ethylene / acrylic acid copolymer magnesium (Mg) ionomer or zinc (Zn) ionomer, and an ethylene / methacrylic acid copolymer are available from the viewpoint of availability. Of these, magnesium (Mg) ionomer or zinc (Zn) ionomer is preferred.
　前記粘着層と接する層Ｘの厚みとしては、１０μｍ以上１００μｍ以下の範囲が好ましい。この厚みが前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。粘着層と接する層Ｘの好ましい厚みは、１５μｍ以上８０μｍ以下である。 The thickness of the layer X in contact with the adhesive layer is preferably in the range of 10 μm to 100 μm. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress). The preferred thickness of the layer X in contact with the adhesive layer is 15 μm or more and 80 μm or less.
　粘着層と接する層Ｘのステルスダイシング用フィルム基材における厚みの比率としては、フィルム基材としての安定生産の観点からは、フィルム基材全体の厚みの１０％以上であることが好ましい。第１の層Ｙの厚みの比率は、分断性と拡張性とのバランスを図る観点からは、フィルム基材全体の厚みの２０％以上であることが好ましい。 The ratio of the thickness of the layer X in contact with the adhesive layer in the stealth dicing film base material is preferably 10% or more of the total thickness of the film base material from the viewpoint of stable production as a film base material. The ratio of the thickness of the first layer Y is preferably 20% or more of the total thickness of the film substrate from the viewpoint of balancing the splitting property and expandability.
［第１の層Ｙ］
　基材１１の重層構造を構成する層１１Ｙ（第１の層Ｙ）は、前記粘着層と接する層Ｘと後述する層１１Ｚ（第２の層Ｚ）との間に設けられる中間層（図２の符号１１Ｙ）として、あるいは前記粘着層と接する層Ｘに対して層１１Ｚ（第２の層Ｚ）を介して設けられる内層（図２の符号１１Ｙ）として、配設されていることが好ましい。 [First layer Y]
The layer 11Y (first layer Y) constituting the multilayer structure of the substrate 11 is an intermediate layer (FIG. 2) provided between the layer X in contact with the adhesive layer and a layer 11Z (second layer Z) described later. 11Y) or an inner layer (reference numeral 11Y in FIG. 2) provided via the layer 11Z (second layer Z) with respect to the layer X in contact with the adhesive layer.
　第１の層Ｙは、樹脂Ｂを含む。前記樹脂Ｂの曲げ剛性率としては、５ＭＰａ以上３５０ＭＰａ以下の範囲であることが好ましい。樹脂Ｂの曲げ剛性率が前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。中でも、樹脂Ｂの曲げ剛性率は、拡張性の点で、５ＭＰａ以上３３０ＭＰａ以下がより好ましく、１０ＭＰａ以上２７０ＭＰａ以下がより好ましい。 The first layer Y includes a resin B. The flexural rigidity of the resin B is preferably in the range of 5 MPa to 350 MPa. The bending rigidity of the resin B being within the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress). Especially, the bending rigidity rate of resin B is more preferably 5 MPa or more and 330 MPa or less, and more preferably 10 MPa or more and 270 MPa or less in terms of expandability.
　第１の層Ｙに含まれる樹脂Ｂとしては、熱可塑性樹脂が好ましく、例えば、低密度ポリエチレン（low-density polyethylene；ＬＤＰＥ）、直鎖状低密度ポリエチレン（linear low-density polyethylene；ＬＬＤＰＥ）、エチレン酢酸ビニル共重合体、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、エチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマー、エチレン・不飽和カルボン酸エステル２元共重合体等が好適に用いられる。 The resin B contained in the first layer Y is preferably a thermoplastic resin, such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and ethylene. Vinyl acetate copolymer, ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer, ethylene / unsaturated carboxylic acid ester 2 An original copolymer or the like is preferably used.
　前記樹脂Ｂの例のうち、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーは、不飽和カルボン酸から導かれる構成単位の含有割合が１質量％以上３５質量％以下の範囲であることが好ましく、５質量％以上２５質量％以下の範囲がより好ましく、特に好ましくは１０質量％以上２０質量％以下の範囲である。不飽和カルボン酸から導かれる構成単位の含有割合が１質量％以上であることは、この構成単位を積極的に含むことを意味し、不飽和カルボン酸の含有により透明性や金属接着性が良好になる。不飽和カルボン酸から導かれる構成単位の含有割合が３５質量％以下であることで、実用的な耐熱性が維持される。
　また、エチレンから導かれる構成単位の含有割合としては、９９質量％以上６５質量％以下の範囲が好ましく、より好ましくは９０質量％以上８０質量％以下の範囲である。 Among the examples of the resin B, an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer are unsaturated carboxylic acid. The content ratio of the structural unit derived from is preferably in the range of 1% by mass to 35% by mass, more preferably in the range of 5% by mass to 25% by mass, and particularly preferably in the range of 10% by mass to 20% by mass. Range. When the content ratio of the structural unit derived from the unsaturated carboxylic acid is 1% by mass or more, this means that the structural unit is positively contained, and transparency and metal adhesion are good due to the inclusion of the unsaturated carboxylic acid. become. Practical heat resistance is maintained by the content rate of the structural unit guide | induced from unsaturated carboxylic acid being 35 mass% or less.
Moreover, as a content rate of the structural unit guide | induced from ethylene, the range of 99 to 65 mass% is preferable, More preferably, it is the range of 90 to 80 mass%.
　前記２元共重合体又は前記３元共重合体を構成する不飽和カルボン酸としては、例えば、アクリル酸、メタクリル酸、マレイン酸、フマル酸、無水マレイン酸、マレイン酸モノエステル等が挙げられ、特に、アクリル酸又はメタクリル酸が好ましい。 Examples of the unsaturated carboxylic acid constituting the binary copolymer or the ternary copolymer include acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoester, and the like. In particular, acrylic acid or methacrylic acid is preferable.
　前記３元共重合体を構成する不飽和カルボン酸エステルとしては、例えば、アクリル酸メチル、アクリル酸エチル、アクリル酸イソブチル、アクリル酸ｎ－ブチル、アクリル酸イソオクチル、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸イソブチル、マレイン酸ジメチル、マレイン酸ジエチル等の（メタ）アクリル酸アルキルエステル等が挙げられる。中でも、（メタ）アクリル酸アルキルエステル（アルキル部位の好ましい炭素数は１～４）がより好ましい。 Examples of the unsaturated carboxylic acid ester constituting the terpolymer include, for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, methacrylic acid Examples include (meth) acrylic acid alkyl esters such as isobutyl acid, dimethyl maleate, and diethyl maleate. Of these, (meth) acrylic acid alkyl ester (the alkyl moiety preferably has 1 to 4 carbon atoms) is more preferable.
　アイオノマーのベースポリマーとなる２元共重合体又は３元共重合体中のカルボキシル基を中和する金属イオンとしては、マグネシウム、亜鉛、ナトリウム、カリウム等が好ましく、中でもマグネシウム、及び亜鉛がより好ましい。アイオノマーは、２元共重合体中のカルボキシル基の１００％以下の範囲で前記金属イオンにより中和され、その中和度は９０％以下が好ましく、より好ましくは２０％以上８５％以下の範囲である。 As the metal ion for neutralizing the carboxyl group in the binary copolymer or ternary copolymer serving as the ionomer base polymer, magnesium, zinc, sodium, potassium and the like are preferable, and among these, magnesium and zinc are more preferable. The ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the neutralization degree is preferably 90% or less, more preferably 20% or more and 85% or less. is there.
　マグネシウムアイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部がマグネシウムで中和されたマグネシウムアイオノマーが好ましい。共重合体においては、ブロック共重合体、ランダム共重合体、又はグラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体、３元ランダム共重合体、２元ランダム共重合体のグラフト共重合体あるいは３元ランダム共重合体のグラフト共重合体を使用するのが好ましく、より好ましくは２元ランダム共重合体又は３元ランダム共重合体である。 The magnesium ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. A magnesium ionomer partially neutralized with magnesium is preferred. The copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer, but in consideration of transparency, a binary random copolymer, a ternary random copolymer, It is preferable to use a graft copolymer of an original random copolymer or a graft copolymer of a ternary random copolymer, more preferably a binary random copolymer or a ternary random copolymer.
　前記アイオノマー樹脂のうち、好適なマグネシウムアイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、マグネシウムイオンで中和したものである。マグネシウムイオンによる中和度は０％を超えて６０％の範囲であり、この範囲では拡張性と分断性とに優れる。好ましい中和度は１０％以上６０％以下の範囲であり、この範囲内であると透明性に優れる。更に好ましい中和度は１０％以上４０％以下の範囲あり、この範囲内であると拡張性、分断性及び透明性のバランスに優れる。
　中でも、マグネシウムアイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 Among the ionomer resins, a preferable magnesium ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid is 10% by mass. In the range of more than 30% by mass and neutralized with magnesium ions. The degree of neutralization with magnesium ions is in the range of more than 0% to 60%, and in this range, extensibility and severability are excellent. The degree of neutralization is preferably in the range of 10% or more and 60% or less, and transparency is excellent in this range. Furthermore, the preferable neutralization degree is in the range of 10% or more and 40% or less.
Among them, the copolymerization ratio of (meth) acrylic acid in the magnesium ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　亜鉛アイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部が亜鉛で中和された亜鉛アイオノマーが好ましい。共重合体は、前記マグネシウムアイオノマーと同様、ブロック共重合体、ランダム共重合体、又はグラフト共重合体のいずれであってもよいが、透明性を考慮すると２元ランダム共重合体、３元ランダム共重合体、２元ランダム共重合体のグラフト共重合体あるいは３元ランダム共重合体のグラフト共重合体が好ましく、より好ましくは２元ランダム共重合体又は３元ランダム共重合体である。 The zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. Zinc ionomers partially neutralized with zinc are preferred. The copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer as in the case of the magnesium ionomer. However, in consideration of transparency, the copolymer is a binary random copolymer or a ternary random copolymer. A copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable, and a binary random copolymer or a ternary random copolymer is more preferable.
　好適な亜鉛アイオノマーは、高圧ラジカル重合法で合成されたエチレンと（メタ）アクリル酸との共重合体をベースとし、前記（メタ）アクリル酸の共重合比を１０質量％を超えて３０質量％以下の範囲としたものを、亜鉛イオンで中和したものである。亜鉛イオンによる中和度は０％を超えて９０％の範囲であり、この範囲では拡張性と分断性に優れる。好ましい中和度は１０％以上９０％以下の範囲であり、この範囲内であると透明性に優れる。
　中でも、亜鉛アイオノマー中における（メタ）アクリル酸の共重合比は、拡張性、成形加工性、分断性、及び透明性のバランスが優れ、工業的に入手しやすい点で、１０質量％を超えて２０質量％以下がより好ましい。 A suitable zinc ionomer is based on a copolymer of ethylene and (meth) acrylic acid synthesized by a high-pressure radical polymerization method, and the copolymerization ratio of the (meth) acrylic acid exceeds 10% by mass and is 30% by mass. The following range was neutralized with zinc ions. The degree of neutralization with zinc ions is in the range of more than 0% to 90%, and in this range, extensibility and splitting are excellent. The degree of neutralization is preferably in the range of 10% or more and 90% or less, and transparency is excellent in this range.
Among them, the copolymerization ratio of (meth) acrylic acid in the zinc ionomer exceeds 10% by mass in terms of excellent balance of expandability, molding processability, fragmentability, and transparency, and is easily available industrially. 20 mass% or less is more preferable.
　前記樹脂Ｂの例のうち、エチレン・不飽和カルボン酸エステル共重合体は、エチレン・（メタ）アクリル酸アルキルエステル共重合体が好ましい。
　エチレン・（メタ）アクリル酸アルキルエステル共重合体を構成する（メタ）アクリル酸アルキルエステルとしては、例えば、アクリル酸メチル、アクリル酸エチル、アクリル酸イソブチル、アクリル酸ｎ－ブチル、アクリル酸イソオクチル、メタクリル酸メチル、メタクリル酸エチル、メタクリル酸イソブチル、マレイン酸ジメチル、マレイン酸ジエチル等が好適に挙げられる。 Among the examples of the resin B, the ethylene / unsaturated carboxylic acid ester copolymer is preferably an ethylene / (meth) acrylic acid alkyl ester copolymer.
Examples of the (meth) acrylic acid alkyl ester constituting the ethylene / (meth) acrylic acid alkyl ester copolymer include, for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methacrylic acid. Preferable examples include methyl acid, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, and diethyl maleate.
　本発明においては、好ましい態様の一つは、第１の層Ｙが、粘着層と接する層Ｘと第２の層Ｚとの間に配される中間層として設けられた態様である。別の好ましい様態の一つは第２の層Ｚが、粘着層と接する層Ｘと第１の層Ｙとの間に配される中間層として設けられた態様である。
　第１の層Ｙが、重層構造を構成する粘着層と接する層Ｘと第２の層Ｚとの間に配される中間層として設けられる場合、粘着層と接する層Ｘ及び第２の層Ｚに対して比較的柔らかい層に構成し、フィルム基材としての応力（特に初期応力）を緩和し、拡張機能を持たせる観点から、第１の層Ｙに含まれる樹脂Ｂとしては、例えば、低密度ポリエチレン（low-density polyethylene；ＬＤＰＥ）、直鎖状低密度ポリエチレン（linear low-density polyethylene；ＬＬＤＰＥ）、エチレン酢酸ビニル共重合体、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーが好ましい。
　また、第２の層Ｚが、粘着層と接する層Ｘと第１の層Ｙとの間に配される中間層として設けられる場合、フィルム基材としての応力（特に初期応力）を緩和し、拡張機能を持たせ、拡張時に層Ｙと接する拡張ステージとのすべり性や、耐ブロッキング性を持たせる観点から、第２の層Ｚに含まれる樹脂Ｃとしては、例えば、低密度ポリエチレン（low-density polyethylene；ＬＤＰＥ）、直鎖状低密度ポリチレン（linear low-density polyethylene；ＬＬＤＰＥ）、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーが好ましい。 In the present invention, one of the preferred embodiments is an embodiment in which the first layer Y is provided as an intermediate layer disposed between the layer X in contact with the adhesive layer and the second layer Z. Another preferred embodiment is an embodiment in which the second layer Z is provided as an intermediate layer disposed between the layer X in contact with the adhesive layer and the first layer Y.
When the first layer Y is provided as an intermediate layer disposed between the layer X and the second layer Z in contact with the adhesive layer constituting the multilayer structure, the layer X and the second layer Z in contact with the adhesive layer The resin B contained in the first layer Y is, for example, a low layer from the viewpoint of reducing the stress (particularly the initial stress) as a film base material and providing an expansion function. Low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), ethylene vinyl acetate copolymer, ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and Ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid terpolymers and their ionomers are preferred.
Further, when the second layer Z is provided as an intermediate layer disposed between the layer X and the first layer Y in contact with the adhesive layer, the stress (particularly the initial stress) as the film substrate is relieved, The resin C contained in the second layer Z is, for example, a low-density polyethylene (low-density polyethylene) from the viewpoint of providing an expansion function and providing sliding properties with the expansion stage that contacts the layer Y during expansion and blocking resistance. density polyethylene (LDPE), linear low-density polyethylene (LLDPE), ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester Ternary copolymers and their ionomers are preferred.
　前記第１の層Ｙの厚みとしては、１０μｍ以上１００μｍ以下の範囲が好ましい。この厚みが前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。第１の層Ｙの好ましい厚みは、１５μｍ以上８０μｍ以下である。 The thickness of the first layer Y is preferably in the range of 10 μm to 100 μm. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress). A preferable thickness of the first layer Y is 15 μm or more and 80 μm or less.
　第１の層Ｙのステルスダイシング用フィルム基材における厚みの比率としては、フィルム基材としての安定生産の観点からは、フィルム基材全体の厚みの１０％以上であることが好ましい。第１の層Ｙの厚みの比率は、分断性と拡張性とのバランスを図る観点からは、フィルム基材全体の厚みの２０％以上であることが好ましい。 The ratio of the thickness of the first layer Y in the film substrate for stealth dicing is preferably 10% or more of the thickness of the entire film substrate from the viewpoint of stable production as a film substrate. The ratio of the thickness of the first layer Y is preferably 20% or more of the total thickness of the film substrate from the viewpoint of balancing the splitting property and expandability.
［第２の層Ｚ］
　基材１１の重層構造を構成する層１１Ｚ（第２の層Ｚ）は、前記粘着層と接する層Ｘに対して層１１Ｙ（第１の層Ｙ）を介して設けられる内層（図２の符号１１Ｚ）として、あるいは前記粘着層と接する層Ｘと前記層１１Ｙ（第１の層Ｙ）との間に設けられる中間層（図２の符号１１Ｚ）として、配設される。 [Second layer Z]
The layer 11Z (second layer Z) constituting the multi-layer structure of the substrate 11 is an inner layer (reference numeral in FIG. 2) provided via the layer 11Y (first layer Y) with respect to the layer X in contact with the adhesive layer. 11Z) or as an intermediate layer (reference numeral 11Z in FIG. 2) provided between the layer X in contact with the adhesive layer and the layer 11Y (first layer Y).
　第２の層Ｚは、樹脂Ｃを含む。前記樹脂Ｃの曲げ剛性率としては、５０ＭＰａ以上３５０ＭＰａ以下の範囲であることが好ましい。樹脂Ｃの曲げ剛性率が前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。中でも、樹脂Ｃの曲げ剛性率は、ウエハ分断性の点で、５０ＭＰａ以上３３０ＭＰａ以下がより好ましく、７０ＭＰａ以上３３０ＭＰａ以下が更に好ましい。 The second layer Z includes a resin C. The bending rigidity of the resin C is preferably in the range of 50 MPa to 350 MPa. The bending rigidity of the resin C being within the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress). Among these, the flexural rigidity of the resin C is more preferably 50 MPa or more and 330 MPa or less, and further preferably 70 MPa or more and 330 MPa or less in terms of wafer parting properties.
　第２の層Ｚに含まれる樹脂Ｃとしては、熱可塑性樹脂が好ましく、例えばエチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーが好適に用いられる。 The resin C contained in the second layer Z is preferably a thermoplastic resin, for example, an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary. A copolymer and its ionomer are preferably used.
　前記樹脂Ｃの例のうち、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーは、不飽和カルボン酸から導かれる構成単位の含有割合が１質量％以上３５質量％以下の範囲であることが好ましく、より好ましくは５質量％以上２０質量％以下の範囲である。不飽和カルボン酸から導かれる構成単位の含有割合が１質量％以上であることは、この構成単位を積極的に含むことを意味し、不飽和カルボン酸の含有により透明性や金属接着性が良好になる。不飽和カルボン酸から導かれる構成単位の含有割合が３５質量％以下であることで、実用的な耐熱性が維持される。
　また、エチレンから導かれる構成単位の含有割合としては、９９質量％以上６５質量％以下の範囲が好ましく、より好ましくは９５質量％以上８０質量％以下の範囲である。 Among the examples of the resin C, an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer and its ionomer are unsaturated carboxylic acid. The content ratio of the structural unit derived from is preferably in the range of 1% by mass to 35% by mass, and more preferably in the range of 5% by mass to 20% by mass. When the content ratio of the structural unit derived from the unsaturated carboxylic acid is 1% by mass or more, this means that the structural unit is positively contained, and transparency and metal adhesion are good due to the inclusion of the unsaturated carboxylic acid. become. Practical heat resistance is maintained by the content rate of the structural unit guide | induced from unsaturated carboxylic acid being 35 mass% or less.
Further, the content ratio of the structural unit derived from ethylene is preferably in the range of 99% by mass to 65% by mass, and more preferably in the range of 95% by mass to 80% by mass.
　前記２元共重合体又は前記３元共重合体を構成する不飽和カルボン酸、並びに前記３元共重合体を構成する不飽和カルボン酸エステルの詳細については、既述の第１の層Ｙにおける２元共重合体又は３元共重合体を構成する不飽和カルボン酸、及び不飽和カルボン酸エステルと同義であり、好ましい態様も同様である。 The details of the unsaturated carboxylic acid constituting the binary copolymer or the ternary copolymer and the unsaturated carboxylic acid ester constituting the ternary copolymer are as follows. It is synonymous with the unsaturated carboxylic acid and unsaturated carboxylic acid ester which comprise a binary copolymer or a ternary copolymer, and its preferable aspect is also the same.
　アイオノマーのベースポリマーとなる２元共重合体中のカルボキシル基を中和する金属イオンとしては、例えば、リチウムイオン、ナトリウムイオン、カリウムイオンなどのアルカリ金属イオン；マグネシウムイオン、カルシウムイオン、亜鉛イオン、アルミニウムイオン等の多価金属のイオン等が挙げられる。
　これらの中でも、マグネシウムイオン又は亜鉛イオンがより好ましい。これら金属イオンは１種単独で用いてもよいし、２種以上を組み合わせて用いてもよい。アイオノマーは、２元共重合体中のカルボキシル基の１００％以下の範囲で前記金属イオンにより中和され、その中和度は９０％以下が好ましく、より好ましくは２０％以上８５％以下の範囲である。 Examples of metal ions that neutralize the carboxyl group in the binary copolymer that is the base polymer of the ionomer include alkali metal ions such as lithium ions, sodium ions, and potassium ions; magnesium ions, calcium ions, zinc ions, and aluminum. Examples include ions of polyvalent metals such as ions.
Among these, magnesium ion or zinc ion is more preferable. These metal ions may be used alone or in combination of two or more. The ionomer is neutralized by the metal ions in the range of 100% or less of the carboxyl group in the binary copolymer, and the degree of neutralization is preferably 90% or less, more preferably in the range of 20% or more and 85% or less. is there.
　上記のうち、マグネシウムアイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部がマグネシウムで中和されたマグネシウムアイオノマーが好ましい。
　亜鉛アイオノマーとしては、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸アルキルエステル共重合体、又はエチレン・（メタ）アクリル酸・（メタ）アクリル酸アルキルエステル共重合体の少なくとも一部が亜鉛で中和された亜鉛アイオノマーが好ましい。
　これらマグネシウムアイオノマー、亜鉛アイオノマーの詳細については、既述の第１の層Ｙの項で説明したマグネシウムアイオノマー、及び亜鉛アイオノマーと同様であり、好ましい態様も同様である。 Among the above, magnesium ionomer includes ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. A magnesium ionomer in which at least a part of the polymer is neutralized with magnesium is preferred.
The zinc ionomer includes at least ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid alkyl ester copolymer, or ethylene / (meth) acrylic acid / (meth) acrylic acid alkyl ester copolymer. Zinc ionomers partially neutralized with zinc are preferred.
The details of these magnesium ionomer and zinc ionomer are the same as the magnesium ionomer and zinc ionomer described in the section of the first layer Y described above, and the preferred embodiments are also the same.
　前記第２の層Ｚの厚みとしては、１０μｍ以上１００μｍ以下の範囲が好ましい。この厚みが前記範囲内にあることは、ステルスダイシングによる加工（分断加工、特に初期応力の維持）に適していることを示す。第２の層Ｚの好ましい厚みは、１５μｍ以上８０μｍ以下である。 The thickness of the second layer Z is preferably in the range of 10 μm to 100 μm. That this thickness is in the above range indicates that it is suitable for processing by stealth dicing (parting processing, particularly maintaining initial stress). A preferred thickness of the second layer Z is not less than 15 μm and not more than 80 μm.
　第２の層Ｚのステルスダイシング用フィルム基材における厚みの比率としては、フィルム基材としての安定生産の観点からは、フィルム基材全体の厚みの１０％以上であることが好ましい。第２の層Ｚの厚みの比率は、分断性と拡張性とのバランスを図る観点からは、フィルム基材全体の厚みの２０％以上であることが好ましい。 The ratio of the thickness of the second layer Z in the stealth dicing film base material is preferably 10% or more of the thickness of the entire film base material from the viewpoint of stable production as a film base material. The ratio of the thickness of the second layer Z is preferably 20% or more of the total thickness of the film base material from the viewpoint of balancing the splitting property and the expandability.
　本発明においては、前記粘着層と接する層Ｘに含まれる樹脂Ａの曲げ剛性率又は前記層Ｚに含まれる樹脂Ｃの曲げ剛性率のそれぞれから層Ｙに含まれる樹脂Ｂの曲げ剛性率を差し引いた差の絶対値（｜樹脂Ａの曲げ剛性率－樹脂Ｂの曲げ剛性率｜、又は｜樹脂Ｃの曲げ剛性率－樹脂Ｂの曲げ剛性率｜）の大きい方の値が、５０ＭＰａ以上３４５ＭＰａ以下の範囲内であることが好ましい。なお、「｜｜」の記号は、絶対値を表す。
　前記値が５０ＭＰａ以上であると、Ｘの強度が低い場合でもウエハ分断性により優れ、またＸの強度が高い場合でも拡張性により優れる。また、前記値が３４５ＭＰａ以下であると、粘着層と接する層Ｘの強度（曲げ剛性率）を分断性に良好な程度に緩和することができる点で有利である。
　中でも、前記同様の理由から、前記差の絶対値の大きい方の値は、５０ＭＰａ以上３３０ＭＰａ以下の範囲であることがより好ましい。 In the present invention, the bending rigidity of the resin B included in the layer Y is subtracted from the bending rigidity of the resin A included in the layer X in contact with the adhesive layer or the bending rigidity of the resin C included in the layer Z. The larger value of the absolute value of the difference (| the bending rigidity of resin A−the bending rigidity of resin B | or | the bending rigidity of resin C−the bending rigidity of resin B |) is 50 MPa or more and 345 MPa or less. It is preferable to be within the range. The symbol “||” represents an absolute value.
When the value is 50 MPa or more, the wafer cutting property is excellent even when the strength of X is low, and the extensibility is excellent even when the strength of X is high. Further, when the value is 345 MPa or less, it is advantageous in that the strength (flexural rigidity) of the layer X in contact with the adhesive layer can be relaxed to a good degree of separation.
Among these, for the same reason as described above, it is more preferable that the value having the larger absolute value of the difference is in the range of 50 MPa to 330 MPa.
　本発明のステルスダイシング用フィルム基材は、ステルスダイシングによるウエハの分断性により優れる点で、粘着層と接する層Ｘの厚みが１５μｍ以上８０μｍ以下であり、前記層Ｙの厚みが１５μｍ以上８０μｍ以下であり、前記層Ｚの厚みが１５μｍ以上８０μｍ以下である態様が好ましい。 The film base material for stealth dicing of the present invention is superior in terms of the ability to divide the wafer by stealth dicing, and the thickness of the layer X in contact with the adhesive layer is 15 μm or more and 80 μm or less, and the thickness of the layer Y is 15 μm or more and 80 μm or less. And the thickness of the layer Z is preferably 15 μm or more and 80 μm or less.
　本発明のステルスダイシング用フィルム基材は、粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとが順に重層された重層構造、又は粘着層と接する層Ｘと第２の層Ｚと第１の層Ｙとが順に重層された重層構造を含み、前記粘着層と接する層Ｘが樹脂Ａを含み、前記樹脂Ａの曲げ剛性率が１８０ＭＰａ以上３５０ＭＰａ以下であり、前記第１の層Ｙが樹脂Ｂを含み、前記樹脂Ｂの曲げ剛性率が１０ＭＰａ以上２７０ＭＰａ以下であり、前記第２の層Ｚが樹脂Ｃを含み、前記樹脂Ｃの曲げ剛性率が７０ＭＰａ以上３３０ＭＰａ以下である態様が好ましい。
　さらに、本発明のステルスダイシング用フィルム基材は、粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとが順に重層された重層構造を含み、前記粘着層と接する層Ｘに含まれる樹脂Ａがエチレン・アクリル酸共重合体のＺｎアイオノマー又はＭｇアイオノマー、エチレン・メタクリル酸共重合体のＺｎアイオノマー又はＭｇアイオノマーであり、前記第１の層Ｙに含まれる樹脂Ｂが低密度ポリエチレン（low-density polyethylene；ＬＤＰＥ）、直鎖状低密度ポリエチレン（linear low-density polyethylene；ＬＬＤＰＥ）、エチレン酢酸ビニル共重合体、エチレン・（メタ）アクリル酸２元共重合体及びそのＺｎアイオノマー、エチレン・（メタ）アクリル酸・（メタ）アクリル酸（好ましくは炭素数１～４の）アルキルエステル３元共重合体及びそのＺｎアイオノマーであり、前記第２の層Ｚに含まれる樹脂Ｃがエチレン・（メタ）アクリル酸２元共重合体及びそのＺｎアイオノマー及びＭｇアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーである態様が好ましい。 The film substrate for stealth dicing according to the present invention includes a multilayer structure in which the layer X, the first layer Y, and the second layer Z in contact with the adhesive layer are sequentially stacked, or the layer X and the second layer in contact with the adhesive layer. Z and the first layer Y are sequentially laminated, the layer X in contact with the adhesive layer contains the resin A, the bending rigidity of the resin A is 180 MPa or more and 350 MPa or less, the first A mode in which the layer Y includes the resin B, the bending rigidity of the resin B is 10 MPa or more and 270 MPa or less, the second layer Z includes the resin C, and the bending rigidity of the resin C is 70 MPa or more and 330 MPa or less. Is preferred.
Furthermore, the film substrate for stealth dicing of the present invention includes a multilayer structure in which a layer X in contact with the adhesive layer, a first layer Y, and a second layer Z are sequentially stacked, and the layer X in contact with the adhesive layer The resin A included is an ethylene / acrylic acid copolymer Zn ionomer or Mg ionomer, an ethylene / methacrylic acid copolymer Zn ionomer or Mg ionomer, and the resin B included in the first layer Y is a low density polyethylene. (Low-density polyethylene (LDPE)), linear low-density polyethylene (LLDPE), ethylene vinyl acetate copolymer, ethylene / (meth) acrylic acid binary copolymer and its Zn ionomer, ethylene・ (Meth) acrylic acid ・ (Meth) acrylic acid (preferably having 1 to 4 carbon atoms) alkyl ester terpolymer and its Zn Resin C contained in the second layer Z, which is an ionomer, is an ethylene / (meth) acrylic acid binary copolymer, its Zn ionomer and Mg ionomer, and ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester 3 The embodiment which is an original copolymer and its ionomer is preferable.
　ステルスダイシング用フィルム基材を構成する粘着層と接する層Ｘと第２の層Ｚ（又は層Ｙ）と第１の層Ｙ（又は層Ｚ）との層厚（μｍ）の比率（Ｘ／Ｚ／Ｙ（又はＸ／Ｙ／Ｚ））としては、層Ｘの比率が１０％以上８０％以下であり、層Ｙの比率が１０％以上７０％以下であり、層Ｚの比率が１０％以上８０％以下であることが好ましい。各層厚の比率は、合計が１００％になるように選択する。比率［％］は、「各層の厚み／総厚×１００」より求められる。 Ratio of layer thickness (μm) of layer X, second layer Z (or layer Y) and first layer Y (or layer Z) in contact with the adhesive layer constituting the stealth dicing film substrate (X / Z) / Y (or X / Y / Z)), the ratio of layer X is 10% or more and 80% or less, the ratio of layer Y is 10% or more and 70% or less, and the ratio of layer Z is 10% or more. It is preferable that it is 80% or less. The ratio of each layer thickness is selected so that the total is 100%. The ratio [%] is obtained from “thickness of each layer / total thickness × 100”.
～物性～
　本発明のステルスダイシング用フィルム基材のヘイズは、分断性を高める点で、レーザ光の透過を阻害しないよう小さいほど好ましい。具体的には、ヘイズは、１０以下とする。ヘイズが１０以下であることは、レーザ光を利用したステルスダイシングによる加工に適した透明性を有していることを示す。中でも、ヘイズは、９．０以下が好ましく、より好ましくは８．０以下である。
　ヘイズは、ヘイズメーターを用いて、ＪＩＳ　Ｋ　７１３６にしたがって測定される値である。 ~ Physical properties ~
The haze of the film substrate for stealth dicing according to the present invention is preferably as small as possible so as not to impede the transmission of laser light in terms of enhancing the splitting property. Specifically, the haze is 10 or less. A haze of 10 or less indicates that the haze has transparency suitable for processing by stealth dicing using laser light. Among them, the haze is preferably 9.0 or less, and more preferably 8.0 or less.
The haze is a value measured according to JIS K 7136 using a haze meter.
　また、本発明のステルスダイシング用フィルム基材の全光線透過率は、ステルスダイシング工程におけるカメラを使った照射位置精度を高める点で、９０％以上とする。全光線透過率が９０％以上であることは、レーザ光を利用したステルスダイシングによる加工に適した光透過性をそなえていることを示す。全光線透過率は、ＨＭ－１５０型（（株）村上色彩研究所製）を用い、２３℃、５０％相対湿度雰囲気下で、ＪＩＳ　Ｋ　７３６１に準拠して測定される値である。 In addition, the total light transmittance of the film substrate for stealth dicing of the present invention is 90% or more from the viewpoint of improving the irradiation position accuracy using the camera in the stealth dicing process. A total light transmittance of 90% or more indicates that the light transmittance suitable for processing by stealth dicing using laser light is provided. The total light transmittance is a value measured according to JIS K 7361 using HM-150 type (manufactured by Murakami Color Research Co., Ltd.) in an atmosphere of 23 ° C. and 50% relative humidity.
　本発明のステルスダイシング用フィルム基材の初期応力は、９ＭＰａ以上１９ＭＰａ以下の範囲とし、好ましい下限値は１０ＭＰａを超える範囲である。更に、初期応力は、１０ＭＰａ以上１７ＭＰａ未満であることがより好ましい。初期応力が９ＭＰａ未満であると、ウエハを分断する際の外部応力を保てず、ウエハの分割が良好に行なえない。また、初期応力が１９ＭＰａを超えると、拡張率が悪化し、均一に分断できない等、分断性に劣る。
　本発明における初期応力は、ＪＩＳ　Ｋ　７１２７に準拠し、ステルスダイシング用フィルム基材のＭＤ方向、及びＴＤ方向について、試験速度：５００ｍｍ／ｓ、試験片：幅１０ｍｍ×長２００ｍｍ、チャック間：１００ｍｍの条件下で、試験片が６％伸長したときに測定される応力として得られ、ＭＤ及びＴＤの測定値の平均で評価する。 The initial stress of the film substrate for stealth dicing of the present invention is in the range of 9 MPa to 19 MPa, and the preferred lower limit is in the range exceeding 10 MPa. Furthermore, the initial stress is more preferably 10 MPa or more and less than 17 MPa. If the initial stress is less than 9 MPa, the external stress when the wafer is divided cannot be maintained, and the wafer cannot be divided satisfactorily. On the other hand, when the initial stress exceeds 19 MPa, the expansion rate is deteriorated, and it is inferior in severability such as being unable to sever uniformly.
The initial stress in the present invention is based on JIS K 7127, and the test speed: 500 mm / s, test piece: width 10 mm × length 200 mm, and chuck interval: 100 mm for the MD direction and the TD direction of the film substrate for stealth dicing. Under the conditions, it is obtained as the stress measured when the specimen is stretched by 6%, and is evaluated by the average of the measured values of MD and TD.
　本発明のステルスダイシング用フィルム基材の拡張率は、１０２％以上１２０％以下とし、好ましくは１０４％以上１２０％以下であり、より好ましくは１０４％以上１１０％以下である。拡張率が前記範囲の下限値（１０２％）未満であると、ウエハを分断する際の外部応力が保てず、ウエハの分断が良好に行なえない。拡張率が前記範囲の上限値（１２０％）を超えるステルスダイシング用フィルム基材は、初期応力９ＭＰａ以上１９ＭＰａ以下の範囲で、現実的に存在しえない。
　拡張率は、以下の方法により測定される値である。
　すなわち、作製したステルスダイシング用フィルム基材から縦（ＭＤ）方向３００ｍｍ以上×横（ＴＤ）方向３００ｍｍ以上の４角形の試料片を切り出す。この試料片に１４１ｍｍ角の正方形を油性ペン等の筆記用具で描いた測定対象１を作成し、この測定対象１を、ステージ中心と測定対象１に描いた正方形の中心とが合うように、８インチウエハ用のウエハ拡張装置（テクノビジョン社製のウエハ拡張装置ＴＥＸ－２１８Ｇ　ＧＲ－８）にセットする。次いで、ステージを１５ｍｍ引き上げ、ステルスダイシング用フィルムを拡張した後６０秒間静置し、測定対象１の正方形の各辺の長さ（辺長）を測定する。得られる辺長４点について、それぞれ伸び率（％；＝拡張後の辺長／拡張前の辺長×１００）を計算し、その平均値を求める。 The expansion rate of the film substrate for stealth dicing according to the present invention is 102% or more and 120% or less, preferably 104% or more and 120% or less, and more preferably 104% or more and 110% or less. If the expansion rate is less than the lower limit (102%) of the above range, the external stress at the time of dividing the wafer cannot be maintained, and the wafer cannot be divided well. A film substrate for stealth dicing whose expansion rate exceeds the upper limit (120%) of the above range cannot actually exist in the range of the initial stress of 9 MPa to 19 MPa.
The expansion rate is a value measured by the following method.
That is, a rectangular sample piece having a longitudinal (MD) direction of 300 mm or more and a transverse (TD) direction of 300 mm or more is cut out from the produced stealth dicing film substrate. A measuring object 1 in which a 141 mm square is drawn on this sample piece with a writing instrument such as an oil-based pen is created. It is set in a wafer expansion device for inch wafers (a wafer expansion device TEX-218G GR-8 manufactured by Technovision). Next, the stage is pulled up by 15 mm, the film for stealth dicing is expanded, and then left still for 60 seconds, and the length (side length) of each side of the square of the measuring object 1 is measured. The elongation percentage (%; = side length after extension / side length before extension × 100) is calculated for each of the four obtained side lengths, and the average value is obtained.
　基材１１の厚みとしては、５０μｍ以上２００μｍ以下の範囲である。基材の総厚が前記範囲内にあることは、ステルスダイシングに適した基材の厚みであることを示す。また、基材の厚みは、拡張性と透明性との観点から、１５０μｍ以下が好適であり、また分断性の観点から、８０μｍ以上であることが好ましい。 The thickness of the substrate 11 is in the range of 50 μm to 200 μm. The total thickness of the base material being within the above range indicates that the base material is suitable for stealth dicing. Further, the thickness of the substrate is preferably 150 μm or less from the viewpoints of expandability and transparency, and is preferably 80 μm or more from the viewpoint of fragmentability.
　また、基材１１は、レーザ光Ｌを散乱させないものであることが好ましく、表面及び裏面が平滑であることが好ましい。基材１１の表面及び裏面は、その表面粗さＲａ（算出平均粗さ）が１．０μｍ以下であることが好ましい。
　表面粗さ（Ｒａ）は、光干渉式の非接触型表面形状粗さ測定器を使用し、ＪＩＳ　Ｂ　０６０１－２００１に準拠して測定される値である。 Moreover, it is preferable that the base material 11 is what does not scatter the laser beam L, and it is preferable that the surface and the back surface are smooth. The surface 11 and the back surface of the substrate 11 preferably have a surface roughness Ra (calculated average roughness) of 1.0 μm or less.
The surface roughness (Ra) is a value measured according to JIS B 0601-2001 using an optical interference type non-contact type surface shape roughness measuring instrument.
　本発明のステルスダイシング用フィルム基材の表面抵抗率は、帯電防止性能の観点より、１．０×１０９Ω／sq以上１．０×１０１２Ω／sq以下であることが好ましい。表面抵抗率の調整は、例えば、特許第４６０６０２９号に開示されているように、ポリエーテルエステル成分を含む帯電防止剤を添加する方法や、イオン伝導性化合物をステルスダイシング用フィルム基材に前もって添加する方法等の公知の方法を用いて行なうことができる。
　表面抵抗率は、Ｈｉｒｅｓｔａ－ＵＰ（三菱化学（株）製）を用い、試験温度２３℃、相対湿度５０％の条件で、印加電圧５００Ｖとして測定される値である。 The surface resistivity of the stealth dicing film substrate of the present invention is preferably 1.0 × 10 9 Ω / sq or more and 1.0 × 10 12 Ω / sq or less from the viewpoint of antistatic performance. For adjusting the surface resistivity, for example, as disclosed in Japanese Patent No. 4,606,029, a method of adding an antistatic agent containing a polyetherester component or an ion conductive compound is added in advance to a film substrate for stealth dicing. It can carry out using well-known methods, such as the method of doing.
The surface resistivity is a value measured with an applied voltage of 500 V using a Hiresta-UP (manufactured by Mitsubishi Chemical Corporation) at a test temperature of 23 ° C. and a relative humidity of 50%.
　本発明のステルスダイシング用フィルム基材は、ポリエーテルエステル成分を含む帯電防止剤を含むことが好ましい。帯電防止剤の融点は、１５５℃以上１８５℃以下であることが好ましく、１６０℃以上１８５℃以下であることがより好ましく、１６０℃以上１８０℃以下であることが特に好ましい。このような帯電防止剤を含むことで、フィルム基材の透明性を損なうことなく、帯電防止性を高めることができる。帯電防止剤の融点が前記範囲内であることで、帯電防止剤を含有した場合のアイオノマー樹脂（特に、亜鉛アイオノマー又はマグネシウムアイオノマー）の透明性を高く維持することができる。 The film substrate for stealth dicing of the present invention preferably contains an antistatic agent containing a polyether ester component. The melting point of the antistatic agent is preferably 155 ° C. or higher and 185 ° C. or lower, more preferably 160 ° C. or higher and 185 ° C. or lower, and particularly preferably 160 ° C. or higher and 180 ° C. or lower. By including such an antistatic agent, the antistatic property can be enhanced without impairing the transparency of the film substrate. When the melting point of the antistatic agent is within the above range, the transparency of the ionomer resin (particularly, zinc ionomer or magnesium ionomer) when containing the antistatic agent can be maintained high.
　融点は、示差走査熱量測定（Differential scanning calorimetry；ＤＳＣ）により、測定試料と基準物質との間の熱量の差を計測し、現れるピーク波形から求められる。 The melting point is obtained from the peak waveform that appears by measuring the difference in the calorific value between the measurement sample and the reference material by differential scanning calorimetry (DSC).
　前記帯電防止剤としては、低分子型帯電防止剤や高分子型帯電防止剤が挙げられるが、高分子型帯電防止剤が好ましく、高分子型帯電防止剤としては、分子内にスルホン酸塩を有するビニル共重合体、アルキルスルホン酸塩、アルキルベンゼンスルホン酸塩、ベタイン等が挙げられる。更に、ポリエーテル、ポリアミドエラストマー、ポリエステルエラストマー、ポリエーテルアミド又はポリエーテルエステルアミドの無機プロトン酸の塩等を挙げることができる。無機プロトン酸の塩としては、アルカリ金属塩、アルカリ土類金属、亜鉛塩、又はアンモニウム塩が挙げられる。 Examples of the antistatic agent include a low molecular weight antistatic agent and a high molecular weight antistatic agent, and a high molecular weight antistatic agent is preferable, and the high molecular weight antistatic agent includes a sulfonate in the molecule. Examples thereof include vinyl copolymers, alkyl sulfonates, alkyl benzene sulfonates, and betaines. Further, mention may be made of inorganic protonic acid salts of polyether, polyamide elastomer, polyester elastomer, polyether amide or polyether ester amide. Examples of the salt of the inorganic proton acid include alkali metal salts, alkaline earth metals, zinc salts, and ammonium salts.
　ポリエーテルエステルアミドとしては、ポリアミドブロックとポリオキシアルキレングリコールブロックとから構成され、これらブロックがエステル結合されたブロック共重合体が挙げられる。
　ポリエーテルエステルアミドにおけるポリアミドブロックは、例えば、ジカルボン酸（例：蓚酸、コハク酸、アジピン酸、セバシン酸、ドデカン二酸、テレフタル酸、イソフタル酸、１，４－シクロヘキサンジカルボン酸等）と、ジアミン（例：エチレンジアミン、テトラメチレンジアミン、ペンタメチレンジアミン、ヘキサメチレンジアミン、デカメチレンジアミン、２，２，４－トリメチルヘキサメチレンジアミン、２，４，４－トリメチルヘキサメチレンジアミン、１，３－ビス（アミノメチル）シクロヘキサン、１，４－ビス（アミノメチル）シクロヘキサン、メチレンビス（４－アミノシクロヘキサン）、ｍ－キシリレンジアミン、ｐ－キシリレンジアミン等）との重縮合、ε－カプロラクタム、ω－ドデカラクタム等のラクタムの開環重合、６－アミノカプロン酸、９－アミノノナン酸、１１－アミノウンデカン酸、１２－アミノドデカン酸等のアミノカルボン酸の重縮合、あるいは前記ラクタムとジカルボン酸とジアミンとの共重合等により得られるものである。このようなポリアミドセグメントは、ナイロン４、ナイロン６、ナイロン４６、ナイロン６６、ナイロン６１０、ナイロン６１２、ナイロン６Ｔ、ナイロン１１、ナイロン１２、ナイロン６／６６、ナイロン６／１２、ナイロン６／６１０、ナイロン６６／１２、ナイロン６／６６／６１０などであり、特にナイロン１１、ナイロン１２などが好ましい。ポリアミドブロックの分子量は、例えば４００～５０００程度である。
　また、ポリエーテルブロックとしては、ポリオキシエチレングリコール、ポリオキシプロピレングリコール、ポリオキシテトラメチレングリコール、ポリオキシエチレン・ポリオキシプロピレングリコール等のポリオキシアルキレングリコールあるいはこれらの混合物などが例示される。これらの分子量は、例えば４００～６０００程度、更には６００～５０００程度がよい。 Examples of the polyether ester amide include a block copolymer composed of a polyamide block and a polyoxyalkylene glycol block, and these blocks are ester-bonded.
Polyamide blocks in the polyether ester amide include, for example, dicarboxylic acid (eg, succinic acid, succinic acid, adipic acid, sebacic acid, dodecanedioic acid, terephthalic acid, isophthalic acid, 1,4-cyclohexanedicarboxylic acid, etc.) and diamine ( Examples: ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, decamethylenediamine, 2,2,4-trimethylhexamethylenediamine, 2,4,4-trimethylhexamethylenediamine, 1,3-bis (aminomethyl) ) Cyclohexane, 1,4-bis (aminomethyl) cyclohexane, methylenebis (4-aminocyclohexane), m-xylylenediamine, p-xylylenediamine, etc.), ε-caprolactam, ω-dodecalactam, etc. Lactam It can be obtained by ring-opening polymerization, polycondensation of aminocarboxylic acids such as 6-aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, 12-aminododecanoic acid, or copolymerization of the lactam, dicarboxylic acid and diamine. Is. Such polyamide segments are nylon 4, nylon 6, nylon 46, nylon 66, nylon 610, nylon 612, nylon 6T, nylon 11, nylon 12, nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, and nylon 11 and nylon 12 are particularly preferable. The molecular weight of the polyamide block is, for example, about 400 to 5000.
Examples of the polyether block include polyoxyethylene glycol, polyoxypropylene glycol, polyoxytetramethylene glycol, polyoxyalkylene glycols such as polyoxyethylene / polyoxypropylene glycol, and mixtures thereof. These molecular weights are preferably about 400 to 6000, and more preferably about 600 to 5000.
　帯電防止剤としては、上市されている市販品を用いてもよく、具体例として、ＢＡＳＦジャパン社製のイルガスタットＰ－１６、同Ｐ－１８、同Ｐ－２０、同Ｐ－２２等、三洋化成工業社製のペレスタット２３０、ペレスタットＨＣ２５０、ペレスタット３００、ペレスタット２４５０、ペレクトロンＰＶＨ、三井・デュポン ポリケミカル社製のエンティラＭＫ４００、ＭＫ４４０、ＳＤ１００等が挙げられる。 Commercially available products may be used as the antistatic agent. Specific examples include irgastat P-16, P-18, P-20, and P-22 manufactured by BASF Japan, Sanyo. Examples include Pelestat 230, Pelestat HC250, Pelestat 300, Pelestat 2450, Peletron PVH, and ENTILA MK400, MK440, SD100 manufactured by Mitsui DuPont Polychemical Co., Ltd.
　前記帯電防止剤は、熱可塑性樹脂中に所定量を溶融混合する、又は帯電防止剤をドライブレンドし、これを溶融混合することができる。 The antistatic agent can be melt-mixed in a predetermined amount in the thermoplastic resin, or dry blended with an antistatic agent, and melt-mixed.
　前記帯電防止剤は、フィルム基材を構成する層Ｘ、層Ｙ、及び層Ｚのいずれに含有されてもよいし、層Ｘ、層Ｙ、及び層Ｚの全層に含有させてもよい。紫外線吸収剤を含有させる場合、紫外線吸収剤を練り込む方法など前記方法により行なえる。
　前記帯電防止剤を含有する場合、前記帯電防止剤のフィルム基材中における含有量としては、アイオノマー樹脂に対して、１０質量％を超えて３０質量％が好ましく、１０質量％を超えて２０質量％がより好ましい。帯電防止剤の含有量が１０質量％を超えることで、フィルム基材の帯電防止効果に優れる。帯電防止剤の含有量が３０質量％以下であることで、フィルム基材の透明性が保たれる。帯電防止剤の含有量を上記範囲とすることによって、フィルム基材の表面抵抗率を１．０×１０９Ω／sq以上１．０×１０１２Ω／sq以下の範囲に好適に調整することができる。 The antistatic agent may be contained in any of the layer X, the layer Y, and the layer Z constituting the film base material, or may be contained in all the layers of the layer X, the layer Y, and the layer Z. When the ultraviolet absorber is contained, it can be carried out by the above-described method such as a method of kneading the ultraviolet absorber.
When the antistatic agent is contained, the content of the antistatic agent in the film base material is preferably more than 10% by mass, more preferably 30% by mass, and more than 10% by mass to 20% by mass with respect to the ionomer resin. % Is more preferable. When the content of the antistatic agent exceeds 10% by mass, the antistatic effect of the film substrate is excellent. The transparency of a film base material is maintained because content of an antistatic agent is 30 mass% or less. By adjusting the content of the antistatic agent in the above range, the surface resistivity of the film substrate is suitably adjusted to a range of 1.0 × 10 9 Ω / sq to 1.0 × 10 12 Ω / sq. Can do.
　本発明のステルスダイシング用フィルム基材には、上記成分のほか、更に、任意の各種添加剤を配合することができる。このような添加剤の一例として、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、ブロッキング防止剤、防錆剤、抗菌剤、難燃剤、難燃助剤、架橋材、架橋助剤等を挙げることができる。また、必要に応じて、ステルスダイシング用フィルム基材に電子線照射を行なってもよい。 The stealth dicing film substrate of the present invention may further contain various other additives in addition to the above components. Examples of such additives include antioxidants, heat stabilizers, light stabilizers, UV absorbers, lubricants, antiblocking agents, rust inhibitors, antibacterial agents, flame retardants, flame retardant aids, crosslinking materials, and crosslinking agents. An auxiliary agent etc. can be mentioned. Moreover, you may perform electron beam irradiation to the film base material for stealth dicing as needed.
　ステルスダイシング用フィルム基材の製造方法としては、従来公知のＴダイキャスト成形法、Ｔダイニップ成形法、インフレーション成形法、押出ラミネート法、カレンダー成形法等の方法を用いることができる。 As a method for producing a stealth dicing film base material, a conventionally known method such as a T-die cast molding method, a T-die nip molding method, an inflation molding method, an extrusion laminating method, or a calendar molding method can be used.
（粘着層）
　粘着層１２は、特に限定されないが、紫外線硬化性に構成された層が好ましく、例えば紫外線硬化タイプのアクリル系粘着剤等を用いて形成することができる。 (Adhesive layer)
The adhesive layer 12 is not particularly limited, but is preferably an ultraviolet curable layer, and can be formed using, for example, an ultraviolet curable acrylic adhesive.
　紫外線硬化タイプのアクリル系粘着剤の具体例としては、（メタ）アクリル酸や（メタ）アクリル酸エステル等の（メタ）アクリル系単量体の（メタ）アクリル系重合体、前記（メタ）アクリル系単量体と官能性単量体（例えば、ポリアクリル酸ブチルやポリアクリル酸２－エチルヘキシル等のポリアクリル酸エステル）との共重合体、ウレタンアクリレート系オリゴマー、及びこれら重合体の混合物と、光重合開始剤とを少なくとも含む紫外線硬化性粘着剤が挙げられる。
　前記重合体の平均分子量は、５０万～１００万程度の高分子量が好ましい。平均分子量は、ゲルパーミエーションクロマトグラフィー（ＧＰＣ）で測定したポリスチレン換算の重量平均分子量をいう。 Specific examples of UV curable acrylic pressure-sensitive adhesives include (meth) acrylic monomers (meth) acrylic monomers such as (meth) acrylic acid and (meth) acrylic acid esters, the (meth) acrylic Copolymers of functional monomers and functional monomers (for example, polyacrylic esters such as polybutyl acrylate and 2-ethylhexyl polyacrylate), urethane acrylate oligomers, and mixtures of these polymers; An ultraviolet curable pressure-sensitive adhesive containing at least a photopolymerization initiator can be mentioned.
The average molecular weight of the polymer is preferably a high molecular weight of about 500,000 to 1,000,000. The average molecular weight refers to the weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
　前記（メタ）アクリル酸エステルとしては、例えば、トリメチロールプロパントリ（メタ）アクリレート、テトラメチロールメタンテトラ（メタ）アクリレート、ペンタエリスリトールトリ（メタ）アクリレート、ペンタエリスリトールテトラ（メタ）アクリレート、ジペンタエリスリトールモノヒドロキシペンタ（メタ）アクリレート、ジペンタエリスリトールヘキサ（メタ）アクリレート、１，４－ブチレングリコールジ（メタ）アクリレート、１，６－ヘキサンジオールジ（メタ）アクリレート、ポリエチレングリコールジ（メタ）アクリレート、オリゴエステル（メタ）アクリレート等が挙げられる。 Examples of the (meth) acrylic acid ester include trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol mono. Hydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, oligoester (Meth) acrylate etc. are mentioned.
　前記ウレタンアクリレート系オリゴマーは、少なくとも２つの炭素－炭素不飽和二重結合を有する紫外線重合性化合物であり、例えば、ポリエステル型又はポリエーテル型等のポリオール化合物と、多価イソシアネート化合物（例えば、２，４－トリレンジイソシアナート、２，６－トリレンジイソシアナート、１，３－キシリレンジイソシアナート、１，４－キシリレンジイソシアナート、ジフエニルメタン４，４－ジイソシアナート等）とを反応させて得られる端末イソシアナートウレタンプレポリマーに、ヒドロキシル基を有するアクリレートあるいはメタクリレート（例えば、２－ヒドロキシエチルアクリレート、２－ヒドロキシエチルメタクリレート、２－ヒドロキシプロピルアクリレート、２－ヒドロキシプロピルメタクリレート、ポリエチレングリコールアクリレート、ポリエチレングリコールメタクリレート等）を反応させて得られるものが挙げられる。 The urethane acrylate oligomer is an ultraviolet polymerizable compound having at least two carbon-carbon unsaturated double bonds. For example, a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2, 4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) The terminal isocyanate urethane prepolymer to be used is an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate). DOO, polyethylene glycol acrylate, those obtained by reacting a polyethylene glycol methacrylate).
　前記光重合開始剤としては、例えば、イソプロピルベンゾインエーテル、イソブチルベンジンエーテル、ベンゾフェノン、ミヒラーズケトン、クロロチオキサントン、ドデシルチオキサントン、ジメチルチオキサントン、ジエチルチオキサントン、ベンジルジメチルケタール、α‐ヒドロキシシクロヘキシルフェニルケトン、２－ヒドロキシメチルフェニルプロパン等が挙げられる。光重合開始剤は、単独でもしくは２種類以上を組み合わせて用いることができる。光重合開始剤を粘着層に添加することで、硬化反応時間又は放射線照射量を抑えて効率よく硬化反応を進行させることができる。 Examples of the photopolymerization initiator include isopropyl benzoin ether, isobutyl benzine ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl Examples include propane. A photoinitiator can be used individually or in combination of 2 or more types. By adding a photopolymerization initiator to the adhesive layer, the curing reaction can be efficiently advanced while suppressing the curing reaction time or radiation dose.
　また、粘着層も、既述の基材と同様に透明性が高いことが好ましい。
　粘着層における可視光の光線透過率としては、可視光線の４００ｎｍ～８００ｎｍの全波長領域において、粘着層における光線透過率が９０％以上であることが好ましい。
　さらに、基材の光線透過率が９０％以上となる波長の可視光線を用いた場合に、ステルスダイシング用フィルム全体での光線透過率が９０％以上であることが好ましく、更には４００ｎｍ～８００ｎｍの全波長領域の光を用いた場合に、ステルスダイシング用フィルム全体の光線透過率が９０％以上であることが好ましい。
　なお、光線透過率は、分光光度計を用いて測定される値である。 Moreover, it is preferable that the adhesive layer also has high transparency like the base material described above.
As the light transmittance of visible light in the adhesive layer, the light transmittance in the adhesive layer is preferably 90% or more in the entire wavelength region of visible light from 400 nm to 800 nm.
Furthermore, when visible light having a wavelength at which the light transmittance of the substrate is 90% or more is used, the light transmittance of the whole stealth dicing film is preferably 90% or more, and more preferably 400 nm to 800 nm. When light in the entire wavelength region is used, the light transmittance of the entire stealth dicing film is preferably 90% or more.
The light transmittance is a value measured using a spectrophotometer.
　粘着層１２の厚みは、５μｍ以上が好ましく、より好ましくは１０μｍ以上である。 The thickness of the adhesive layer 12 is preferably 5 μm or more, and more preferably 10 μm or more.
　本発明のステルスダイシング用フィルムのヘイズは、分断率を高める点で、レーザ光の透過を阻害しないよう小さいほど好ましい。具体的には、ヘイズは、１０．０以下が好ましく、より好ましくは９．０以下、更に好ましくは８．０以下である。ヘイズの測定方法は、既述の通りである。
　また、フィルム拡張後に、フィルムの全体又は一部分に白化現象が確認されないことが望ましい。 The haze of the stealth dicing film of the present invention is preferably as small as possible so as not to impede the transmission of laser light in terms of increasing the fractionation rate. Specifically, the haze is preferably 10.0 or less, more preferably 9.0 or less, and still more preferably 8.0 or less. The method for measuring haze is as described above.
Further, it is desirable that no whitening phenomenon is observed in the whole or a part of the film after the film expansion.
　本発明のステルスダイシング用フィルムの初期応力は、９ＭＰａを超えることが好ましく、１０ＭＰａ以上１９ＭＰａ以下であることがより好ましく、１０ＭＰａ以上１７ＭＰａ未満であることが更に好ましい。初期応力が９ＭＰａを超える範囲であると、ウエハを分断する際の外部応力が保たれ、ウエハの分断が良好に行なえる。また、初期応力が１９ＭＰａ以下であると、拡張性の点で有利である。初期応力の測定方法は、既述の通り（ＪＩＳ　Ｋ　７１２７に準拠）である。 The initial stress of the stealth dicing film of the present invention is preferably more than 9 MPa, more preferably 10 MPa or more and 19 MPa or less, and still more preferably 10 MPa or more and less than 17 MPa. When the initial stress is in the range exceeding 9 MPa, the external stress at the time of dividing the wafer is maintained, and the wafer can be divided satisfactorily. Moreover, it is advantageous in terms of expandability when the initial stress is 19 MPa or less. The method for measuring the initial stress is as described above (based on JIS K 7127).
　本発明のステルスダイシング用フィルムの拡張率は、１０２％以上１２０％以下が好ましく、より好ましくは１０４％以上１２０％以下である。拡張率が前記範囲の下限値以上であると、ウエハを分断する際の外部応力が保たれ、ウエハの分断が良好に行なえる。拡張率が前記範囲の上限値以下であると、均一にフィルムが伸張し、拡張のムラやフィルム歪みの発生を抑えることができる。拡張率の測定方法は、既述の通りである。 The expansion rate of the stealth dicing film of the present invention is preferably 102% to 120%, more preferably 104% to 120%. When the expansion rate is equal to or greater than the lower limit of the above range, the external stress at the time of dividing the wafer is maintained, and the wafer can be divided well. When the expansion rate is less than or equal to the upper limit of the above range, the film is uniformly stretched, and expansion unevenness and film distortion can be suppressed. The method for measuring the expansion rate is as described above.
［電子部品の製造方法］
　本発明のステルスダイシング用フィルムを用いた電子部品の製造方法について詳述する。
　本発明の電子部品の製造方法は、ウエハの裏面に、既述の本発明のステルスダイシング用フィルムを貼り付ける工程（フィルム貼付工程）と、ステルスダイシング用フィルムが貼り付けられたウエハに対し、ステルスダイシング用フィルム側からレーザ光を照射し、ステルスダイシング用フィルムを介してレーザ光によりウエハをステルスダイシングする工程（ダイシング工程）とを設けて構成されている。本発明の電子部品の製造方法は、必要に応じて、更に他の工程を設けて構成されていてもよい。 [Method of manufacturing electronic parts]
The manufacturing method of the electronic component using the film for stealth dicing of this invention is explained in full detail.
The method for manufacturing an electronic component of the present invention includes a step of attaching the above-described stealth dicing film of the present invention to the back surface of the wafer (film pasting step) A step (dicing step) of irradiating a laser beam from the dicing film side and stealth dicing the wafer with the laser beam through the stealth dicing film is provided. The method for manufacturing an electronic component of the present invention may be configured by further providing other steps as necessary.
　図３Ａに示すように、ステルスダイシング用フィルム１の粘着層１２をウエハＷの裏面（素子形成面と反対側の面）に固定するとともに、ステルスダイシング用フィルム１を、その粘着層１２の端部がダイシングテーブル６と接するように置き、粘着層１２にてダイシングテーブルに固定する（フィルム貼付工程）。
　次に、ダイシングテープ１の基材１１側からレーザ光を照射し、ステルスダイシング用フィルム１を介してウエハＷの内部にレーザ光Ｌを導光することにより、ウエハＷの内部のダイシングラインに沿って、図３Ｂに示すように改質部（改質領域）Ｗ１を形成する。その後、図４に示すように、ステルスダイシング用フィルム１の端部を矢印方向に引っ張ることで、フィルムを拡張させる（ダイシング工程）。これにより、前記改質部Ｗ１を起点に、ウエハＷが改質部Ｗ１に沿って複数に分割されることとなる。
　次いで、ステルスダイシング用フィルム１の粘着層１２に紫外線を照射すると、粘着層１２が固化し、該層の粘着力は低下する。これにより、ステルスダイシング用フィルム１から複数のウエハ、すなわち個々のチップ（電子部品）を取り外すことができ、所望とする電子部品が得られる。 As shown in FIG. 3A, the adhesive layer 12 of the stealth dicing film 1 is fixed to the back surface (surface opposite to the element forming surface) of the wafer W, and the stealth dicing film 1 is attached to the end of the adhesive layer 12. Is placed in contact with the dicing table 6 and fixed to the dicing table with the adhesive layer 12 (film sticking step).
Next, laser light is irradiated from the substrate 11 side of the dicing tape 1 and the laser light L is guided to the inside of the wafer W through the stealth dicing film 1, thereby along the dicing line inside the wafer W. Then, as shown in FIG. 3B, a reforming portion (modified region) W1 is formed. Thereafter, as shown in FIG. 4, the film is expanded by pulling the end of the stealth dicing film 1 in the direction of the arrow (dicing step). As a result, the wafer W is divided into a plurality of parts along the reforming portion W1 starting from the reforming portion W1.
Next, when the adhesive layer 12 of the stealth dicing film 1 is irradiated with ultraviolet rays, the adhesive layer 12 is solidified and the adhesive strength of the layer is reduced. Thereby, a plurality of wafers, that is, individual chips (electronic components) can be removed from the stealth dicing film 1, and a desired electronic component can be obtained.
　レーザとしては、例えば、パルスレーザ光を発生するＮｄ：ＹＡＧレーザ、Ｎｄ：ＹＶＯレーザ、Ｎｄ：ＹＬＦレーザ、チタンサファイヤレーザ、ＣＯ２レーザ、アルゴンイオンレーザ等の公知のレーザを、場合に応じて選択することができる。 As the laser, for example, a known laser such as an Nd: YAG laser, an Nd: YVO laser, an Nd: YLF laser, a titanium sapphire laser, a CO 2 laser, or an argon ion laser that generates pulsed laser light is selected depending on the case. can do.
　本発明の電子部品の製造方法は、シリコンウエハを対象とするが、例えば、ガラスウエハ、炭化ケイ素ウエハ、サファイアウエハ、リン化ガリウムウエハ、ヒ化ガリウムウエハ等の化合物半導体ウエハ等を用いてもよい。 The method for manufacturing an electronic component according to the present invention is intended for a silicon wafer. For example, a compound semiconductor wafer such as a glass wafer, a silicon carbide wafer, a sapphire wafer, a gallium phosphide wafer, or a gallium arsenide wafer may be used. .
　以下、本発明を実施例により説明するが、本発明はこれらの実施例に限定されるものではない。なお、エチレン単位含有量はエチレン由来の構成単位の含有比率を、メタクリル酸単位含有量はメタクリル酸由来の構成単位の含有比率を、アクリル酸イソブチル単位含有量はアクリル酸イソブチル由来の構成単位の含有比率を、それぞれ示す。 Hereinafter, the present invention will be described by way of examples, but the present invention is not limited to these examples. The ethylene unit content is the content ratio of structural units derived from ethylene, the methacrylic acid unit content is the content ratio of structural units derived from methacrylic acid, and the isobutyl acrylate unit content is the content of structural units derived from isobutyl acrylate. The ratio is shown respectively.
〔Ａ〕実施例１～２７及び比較例１～４
　以下に示す実施例１～２７及び比較例１～４に用いる原料の組成及び物性、並びに得られたフィルム及びシートの物性の測定方法は、以下の通りである。 [A] Examples 1-27 and Comparative Examples 1-4
The composition and physical properties of raw materials used in Examples 1 to 27 and Comparative Examples 1 to 4 shown below, and methods for measuring the physical properties of the obtained films and sheets are as follows.
－１．原材料－
（１）アイオノマー（ＩＯ－１）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：マグネシウム
　中和度：３５％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．９ｇ／１０分
（２）アイオノマー（ＩＯ－２）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：マグネシウム
　中和度：５４％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：０．７ｇ／１０分
（３）アイオノマー（ＩＯ－３）
　ベースポリマー：エチレン・メタクリル酸・アクリル酸イソブチル共重合体（エチレン単位含有量：８０質量％、メタクリル酸単位含有量：１０質量％、アクリル酸イソブチル単位含有量：１０質量％）
　金属カチオン源：亜鉛
　中和度：７０％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：１．０ｇ／１０分
（４）アイオノマー（ＩＯ－４）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８９質量％、メタクリル酸単位含有量：１１質量％）
　金属カチオン源：亜鉛
　中和度：６５％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．０ｇ／１０分
（５）アイオノマー（ＩＯ－５）
　ベースポリマー：エチレン・メタクリル酸・アクリル酸イソブチル共重合体（エチレン単位含有量：８１量％、メタクリル酸単位含有量：１１．５質量％、アクリル酸イソブチル単位含有量：７．５質量％）
　金属カチオン源：マグネシウム
　中和度：１４％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．９ｇ／１０分
（６）アイオノマー（ＩＯ－６）
　ベースポリマー：エチレン・メタクリル酸・アクリル酸イソブチル共重合体（エチレン単位含有量：８２質量％、メタクリル酸単位含有量：１３質量％、アクリル酸イソブチル単位含有量：５質量％）
　金属カチオン源：マグネシウム
　中和度：２７％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．９ｇ／１０分
（７）アイオノマー（ＩＯ－７）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：亜鉛
　中和度：５９％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：０．９ｇ／１０分 -1. raw materials-
(1) Ionomer (IO-1)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Magnesium Neutralization degree: 35%
MFR (190 ° C., 2160 g load): 5.9 g / 10 minutes (2) Ionomer (IO-2)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Magnesium Neutralization degree: 54%
MFR (190 ° C., 2160 g load): 0.7 g / 10 min (3) Ionomer (IO-3)
Base polymer: ethylene / methacrylic acid / isobutyl acrylate copolymer (ethylene unit content: 80 mass%, methacrylic acid unit content: 10 mass%, isobutyl acrylate unit content: 10 mass%)
Metal cation source: Zinc Neutralization degree: 70%
MFR (190 ° C., 2160 g load): 1.0 g / 10 min (4) Ionomer (IO-4)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 89% by mass, methacrylic acid unit content: 11% by mass)
Metal cation source: Zinc Neutralization degree: 65%
MFR (190 ° C., 2160 g load): 5.0 g / 10 min (5) Ionomer (IO-5)
Base polymer: ethylene / methacrylic acid / isobutyl acrylate copolymer (ethylene unit content: 81% by weight, methacrylic acid unit content: 11.5% by weight, isobutyl acrylate unit content: 7.5% by weight)
Metal cation source: Magnesium Neutralization degree: 14%
MFR (190 ° C., 2160 g load): 5.9 g / 10 minutes (6) Ionomer (IO-6)
Base polymer: ethylene / methacrylic acid / isobutyl acrylate copolymer (ethylene unit content: 82 mass%, methacrylic acid unit content: 13 mass%, isobutyl acrylate unit content: 5 mass%)
Metal cation source: Magnesium Neutralization degree: 27%
MFR (190 ° C., 2160 g load): 5.9 g / 10 min (7) Ionomer (IO-7)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Zinc Neutralization degree: 59%
MFR (190 ° C., 2160 g load): 0.9 g / 10 min
（８）エチレン・（メタ）アクリル酸共重合体（ＥＭＡＡ）
　エチレン・メタクリル酸共重合体（エチレン単位含有量：９１質量％、メタクリル酸単位含有量：９質量％）
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：３．０ｇ／１０分 (8) Ethylene / (meth) acrylic acid copolymer (EMAA)
Ethylene / methacrylic acid copolymer (ethylene unit content: 91% by mass, methacrylic acid unit content: 9% by mass)
MFR (190 ° C., 2160 g load): 3.0 g / 10 min
（９）ポリエーテルエステル成分（Ｂ－１）
　商品名：イルガスタットＰ－１６（融点（ＤＳＣ測定）：１５８℃、ＢＡＳＦジャパン（株）製、ポリエーテルエステルアミドブロック共重合体）
（１０）ポリエーテルエステル成分（Ｂ－２）
　商品名：イルガスタットＰ－１８（融点（ＤＳＣ測定）：１７３℃、ＢＡＳＦジャパン（株）製、ポリエーテルエステルアミドブロック共重合体）
（１１）ポリエーテルエステル成分（Ｂ－３）
　商品名：イルガスタットＰ－２０（融点（ＤＳＣ測定）：１９５℃、ＢＡＳＦジャパン（株）製、ポリエーテルエステルアミドブロック共重合体） (9) Polyetherester component (B-1)
Product name: Irgastat P-16 (melting point (DSC measurement): 158 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
(10) Polyetherester component (B-2)
Product name: Irgastat P-18 (melting point (DSC measurement): 173 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
(11) Polyetherester component (B-3)
Product name: Irgastat P-20 (melting point (DSC measurement): 195 ° C., manufactured by BASF Japan Ltd., polyether ester amide block copolymer)
－２．物性測定方法－
　ステルスダイシング用フィルム基材の物性については、後述する実施例及び比較例で製造したアイオノマーフィルム基材等を用いて測定を行なった。測定結果は、下記表１～表２に示す。 -2. Physical property measurement method
About the physical property of the film base material for stealth dicing, it measured using the ionomer film base material etc. which were manufactured by the Example and comparative example which are mentioned later. The measurement results are shown in Tables 1 and 2 below.
（１）初期応力
　作製した各ステルスダイシング用フィルム基材の縦（ＭＤ）方向、及び横（ＴＤ）方向について、ＪＩＳ　Ｋ　７１２７に準拠し、下記の条件下で６％伸長したときの応力を測定した。下記表１～表２に示す値は、ＭＤ及びＴＤの平均値である。
　<条件>
・試験速度：５００ｍｍ／秒
・試験片：幅１０ｍｍ×長２００ｍｍ
・チャック間：１００ｍｍ (1) Initial stress The longitudinal (MD) direction and transverse (TD) direction of each produced stealth dicing film substrate was measured in accordance with JIS K 7127, and the stress when stretched by 6% under the following conditions was measured. did. The values shown in Tables 1 and 2 below are average values of MD and TD.
<Condition>
・ Test speed: 500 mm / second ・ Test specimen: width 10 mm × length 200 mm
-Between chucks: 100mm
（２）ヘイズ
　作製した各ステルスダイシング用フィルム基材について、（株）村上色彩研究所製のＨＭ－１５０型を用い、温度２３℃、相対湿度５０％の雰囲気下で、ＪＩＳ　Ｋ　７１３６に準拠して測定した。 (2) Haze For each produced stealth dicing film base material, HM-150 type manufactured by Murakami Color Research Co., Ltd. was used, and the temperature was 23 ° C. and the relative humidity was 50%, in accordance with JIS K 7136. Measured.
（３）拡張性（拡張率）
　作製した各ステルスダイシング用フィルム基材から、縦（フィルムのＭＤ方向）３００ｍｍ以上×横（フィルムのＴＤ方向）３００ｍｍ以上の４角形のフィルム基材片を切り取り、この切り取ったフィルム基材片に、１４１ｍｍ角の正方形を油性ペン等の筆記用具を用いて描いた（以下、測定対象１）。８インチウエハ用のウエハ拡張装置（テクノビジョン社製のウエハ拡張装置ＴＥＸ－２１８Ｇ　ＧＲ－８）に、測定対象１をセットした。この際、ウエハ拡張装置のステージ中心と、測定対象１に描いた正方形の中心とが合うようにセットした。次に、ステージを１５ｍｍ引き上げ、ステルスダイシング用フィルムを拡張した後、６０秒間静置し、測定対象１の正方形の各辺の長さ（辺長）を測定した。得られた辺長４点について、それぞれ伸び率（％；＝拡張後の辺長／拡張前の辺長×１００）を計算し、その平均値を拡張率［％］とした。 (3) Expandability (expansion rate)
From each produced stealth dicing film substrate, a rectangular film substrate piece of 300 mm or more in the vertical direction (MD direction of the film) x 300 mm or more in the horizontal direction (TD direction of the film) was cut, and this cut film substrate piece was A 141 mm square was drawn using a writing instrument such as an oil pen (hereinafter, measurement target 1). Measurement object 1 was set on a wafer expansion device for 8-inch wafers (a wafer expansion device TEX-218G GR-8 manufactured by Technovision). At this time, the stage center of the wafer expansion apparatus was set so that the center of the square drawn on the measuring object 1 was aligned. Next, after raising the stage by 15 mm and expanding the film for stealth dicing, the stage was left still for 60 seconds, and the length (side length) of each side of the square of the measuring object 1 was measured. The elongation percentage (%; = side length after expansion / side length before expansion × 100) was calculated for each of the obtained four side lengths, and the average value was defined as the expansion ratio [%].
（４）分断性
　作製した各ステルスダイシング用フィルム基材の分断性能を、下記の評価基準にしたがって評価した。なお、分断率［％］とは、「（実際に分断できた数）／（総分割数）×１００」により求められる値である。
　<評価基準>
Ａ：分断率が８０％以上１００％以下であった。
Ｂ：分断率が６０％以上８０％未満であった。
Ｃ：分断率が６０％未満であった。
Ｄ：分断が容易に行なえなかった。 (4) Splitting property The cutting performance of each stealth dicing film base material produced was evaluated according to the following evaluation criteria. The division rate [%] is a value obtained by “(number of actually divided) / (total number of divisions) × 100”.
<Evaluation criteria>
A: The dividing rate was 80% or more and 100% or less.
B: The division rate was 60% or more and less than 80%.
C: The division rate was less than 60%.
D: The division could not be easily performed.
（５）表面抵抗率
　三菱化学（株）製のＨｉｒｅｓｔａ－ＵＰを用い、２３℃、５０％相対湿度雰囲気下で、印加電圧５００Ｖとして測定した。 (5) Surface resistivity Measured using a Hiresta-UP manufactured by Mitsubishi Chemical Corporation at an applied voltage of 500 V in an atmosphere of 23 ° C. and 50% relative humidity.
（６）全光線透過率
　作製した各ステルスダイシング用フィルム基材について、（株）村上色彩研究所製のＨＭ－１５０型を用い、２３℃、５０％相対湿度雰囲気下で、ＪＩＳ　Ｋ　７３６１に準拠して測定した。 (6) Total light transmittance About each produced stealth dicing film base material, using HM-150 type made by Murakami Color Research Co., Ltd., compliant with JIS K 7361 under an atmosphere of 23 ° C. and 50% relative humidity. And measured.
　まず、帯電防止剤を含有しない場合の例として、実施例１～４を比較例と対比して示す。
［実施例１］
　５０ｍｍφ単軸押出機インフレーション成形機を使用し、この成形機の樹脂投入口に前記アイオノマー（ＩＯ－１）を投入して、ダイス温度１９０℃として、８０μｍ厚のアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 First, as an example in which no antistatic agent is contained, Examples 1 to 4 are shown in comparison with Comparative Examples.
[Example 1]
Using a 50 mmφ single-screw extruder inflation molding machine, the ionomer (IO-1) is introduced into the resin inlet of this molding machine, and the die temperature is set to 190 ° C. and the 80 μm-thick ionomer film substrate (stealth dicing film) Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［実施例２］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－６）に、また、ダイス温度を２００℃に代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Example 2]
In Example 1, an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was changed to the ionomer (IO-6) and the die temperature was changed to 200 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［実施例３］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－２）に代えると共に、ダイス温度を２３０℃に代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Example 3]
In Example 1, an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-2) and the die temperature was changed to 230 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［実施例４］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－４）に代えると共に、ダイス温度を１８０℃に代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Example 4]
In Example 1, except that the ionomer (IO-1) was replaced with the ionomer (IO-4) and the die temperature was changed to 180 ° C., the ionomer film substrate (the film for stealth dicing) was the same as in Example 1. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［比較例１］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－３）に代えると共に、ダイス温度を２１０℃に代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Comparative Example 1]
In Example 1, an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-3) and the die temperature was changed to 210 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［比較例２］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－５）に代えると共に、ダイス温度を１８０℃に代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Comparative Example 2]
In Example 1, an ionomer film substrate (stealth dicing film) was prepared in the same manner as in Example 1 except that the ionomer (IO-1) was replaced with the ionomer (IO-5) and the die temperature was changed to 180 ° C. Substrate). About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［比較例３］
　実施例１において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－７）に代えると共に、ダイス温度を２１０℃に、厚みを２２０μｍに代えたこと以外は、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Comparative Example 3]
In Example 1, except that the ionomer (IO-1) was replaced with the ionomer (IO-7), the die temperature was changed to 210 ° C., and the thickness was changed to 220 μm. (Film substrate for stealth dicing) was produced. About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
［比較例４］
　実施例１において、アイオノマー（ＩＯ－１）をＥＭＡＡに代えると共に、ダイス温度を１８０℃に代えたこと以外は、実施例１と同様にしてフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、及び全光線透過率の測定を行なった。結果を、下記表１に示す。 [Comparative Example 4]
In Example 1, a film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 1 except that ionomer (IO-1) was replaced with EMAA and the die temperature was changed to 180 ° C. . About this produced film base material, the initial stress, haze, expansion rate, and total light transmittance were measured. The results are shown in Table 1 below.
　次に、帯電防止剤を含有する場合の例を実施例５～実施例９に示す。
［実施例５］
　実施例１において、使用したアイオノマー（ＩＯ－１）を、アイオノマー（ＩＯ－１）８５質量部、イルガスタットＰ－１６（ポリエーテルエステル成分（Ｂ－１））７．５質量部、及びイルガスタットＰ－１８（ポリエーテルエステル成分（Ｂ－２））７．５質量部に代え、これら成分をドライブレンドした。このドライブレンドした原料を、フルフライトタイプのスクリュー（４０ｍｍφ）を備えた単軸押出機の樹脂投入口に投入した後、溶融混練してペレット化した。得られたペレットを用い、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 Next, examples in the case of containing an antistatic agent are shown in Examples 5 to 9.
[Example 5]
In Example 1, the ionomer (IO-1) used was 85 parts by mass of ionomer (IO-1), 7.5 parts by mass of irgastat P-16 (polyetherester component (B-1)), and irgastat. Instead of 7.5 parts by mass of P-18 (polyether ester component (B-2)), these components were dry blended. The dry blended raw material was charged into a resin charging port of a single screw extruder equipped with a full flight type screw (40 mmφ), and then melt kneaded and pelletized. Using the obtained pellets, an ionomer film substrate (film substrate for stealth dicing) was produced in the same manner as in Example 1. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
［実施例６］
　実施例１において、使用したアイオノマー（ＩＯ－１）を、アイオノマー（ＩＯ－１）８５質量部及びイルガスタットＰ－１８（ポリエーテルエステル成分（Ｂ－２））１５質量部に代え、これら成分をドライブレンドした。このドライブレンドした原料を、フルフライトタイプのスクリュー（４０ｍｍφ）を備えた単軸押出機の樹脂投入口に投入した後、溶融混練してペレット化した。得られたペレットを用い、実施例１と同様にしてアイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 [Example 6]
In Example 1, the ionomer (IO-1) used was replaced with 85 parts by weight of ionomer (IO-1) and 15 parts by weight of Irgastat P-18 (polyetherester component (B-2)). Dry blended. The dry blended raw material was charged into a resin charging port of a single screw extruder equipped with a full flight type screw (40 mmφ), and then melt kneaded and pelletized. Using the obtained pellets, an ionomer film substrate (film substrate for stealth dicing) was produced in the same manner as in Example 1. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
［実施例７］
　実施例５において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－２）に代えたこと以外は、実施例５と同様にして、アイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 [Example 7]
An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 5 except that ionomer (IO-1) was replaced with ionomer (IO-2) in Example 5. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
［実施例８］
　実施例６において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－２）に代えたこと以外は、実施例６と同様にして、アイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 [Example 8]
An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the ionomer (IO-1) was replaced with the ionomer (IO-2) in Example 6. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
［実施例９］
　実施例６において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－２）に代えると共に、イルガスタットＰ－１８（１５質量部）をイルガスタットＰ－１６（ポリエーテルエステル成分（Ｂ－１））１５質量部に代えたこと以外は、実施例６と同様にして、アイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 [Example 9]
In Example 6, the ionomer (IO-1) was replaced with the ionomer (IO-2), and Irgastat P-18 (15 parts by mass) was replaced with Irgastat P-16 (polyetherester component (B-1)) 15 An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the mass parts were replaced. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
［比較例５］
　実施例６において、アイオノマー（ＩＯ－１）をアイオノマー（ＩＯ－２）に代えると共に、イルガスタットＰ－１８（１５質量部）をイルガスタットＰ－２０（ポリエーテルエステル成分（Ｂ－３））１５質量部に代えたこと以外は、実施例６と同様にして、アイオノマーフィルム基材（ステルスダイシング用フィルム基材）を作製した。この作製したフィルム基材について、初期応力、ヘイズ、拡張率、表面抵抗率、及び全光線透過率の測定を行なった。結果を、下記表２に示す。 [Comparative Example 5]
In Example 6, the ionomer (IO-1) was replaced with the ionomer (IO-2), and Irgastat P-18 (15 parts by mass) was replaced with Irgastat P-20 (polyetherester component (B-3)) 15 An ionomer film substrate (a film substrate for stealth dicing) was produced in the same manner as in Example 6 except that the mass parts were replaced. About this produced film base material, the initial stress, haze, expansion rate, surface resistivity, and total light transmittance were measured. The results are shown in Table 2 below.
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［実施例１０～１８］
　基材として、実施例１～９で作製したアイオノマーフィルム基材を用意し、粘着層形成用の粘着材として、紫外線硬化型アクリル系粘着剤（荒川化学工業社製のビームセット５７５（ウレタンアクリレート系オリゴマー））を用意した。
　上記の基材及び粘着剤を用いて、基材の上に、紫外線硬化型アクリル系粘着材を酢酸エチルに溶かしたものをバーコート塗布することで、図１に示すようなアイオノマーフィルム基材１１／乾燥厚み２０μｍの粘着層１２の重層構造よりなる９種のステルスダイシング用フィルムを作製した。 [Examples 10 to 18]
As the base material, the ionomer film base materials prepared in Examples 1 to 9 were prepared, and as the adhesive material for forming the adhesive layer, an ultraviolet curable acrylic adhesive (Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd.) was used. Oligomer)) was prepared.
An ionomer film base material 11 as shown in FIG. 1 is applied on the base material by bar coating using the above base material and pressure-sensitive adhesive, which is obtained by dissolving an ultraviolet curable acrylic pressure-sensitive adhesive material in ethyl acetate. / Nine types of stealth dicing films having a multilayer structure of the adhesive layer 12 having a dry thickness of 20 μm were prepared.
［実施例１９～２７］
　実施例１０～１８で作製したステルスダイシング用フィルムを用いて、図３Ａに示すように、各ステルスダイシング用フィルム１の粘着層１２をウエハＷの裏面に固定し、さらにステルスダイシング用フィルム１をその粘着層１２の端部をダイシングテーブル６と接触させてダイシングテーブルに固定する。次に、ダイシングテープ１の基材１１側からレーザ光を照射し、ステルスダイシング用フィルム１を介して導光することで、図３Ｂに示すようにウエハＷの内部のダイシングラインに沿って改質部Ｗ１を形成する。その後、図４に示すように、ステルスダイシング用フィルム１の端部を矢印方向に引っ張ってフィルムを拡張し、改質部Ｗ１を起点として複数に分割する。その後、粘着層１２に紫外線照射し、複数のチップを取り出すことで、所望とする電子部品が得られる。 [Examples 19 to 27]
As shown in FIG. 3A, the adhesive layer 12 of each stealth dicing film 1 was fixed to the back surface of the wafer W using the stealth dicing films prepared in Examples 10 to 18, and the stealth dicing film 1 was The end of the adhesive layer 12 is brought into contact with the dicing table 6 and fixed to the dicing table. Next, the laser beam is irradiated from the base material 11 side of the dicing tape 1 and guided through the stealth dicing film 1, thereby modifying along the dicing line inside the wafer W as shown in FIG. 3B. A portion W1 is formed. Thereafter, as shown in FIG. 4, the end portion of the stealth dicing film 1 is pulled in the direction of the arrow to expand the film, and is divided into a plurality of portions starting from the modified portion W1. Thereafter, the adhesive layer 12 is irradiated with ultraviolet rays, and a plurality of chips are taken out to obtain a desired electronic component.
〔Ｂ〕実施例２８～８９及び比較例６～１０
　以下に示す実施例２８～４９及び比較例６～１０に用いる原料の組成及び物性、並びに得られたフィルム及びシートの物性の測定方法は、以下の通りである。 [B] Examples 28 to 89 and Comparative Examples 6 to 10
The composition and physical properties of the raw materials used in Examples 28 to 49 and Comparative Examples 6 to 10 shown below, and methods for measuring the physical properties of the obtained films and sheets are as follows.
－１．原材料－
（１）アイオノマー（ＩＯ－１１）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：マグネシウム
　中和度：３５％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．９ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：３３０ＭＰａ
（２）アイオノマー（ＩＯ－１２）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：マグネシウム
　中和度：５４％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：０．７ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：３２０ＭＰａ
（３）アイオノマー（ＩＯ－１３）
　ベースポリマー：エチレン・メタクリル酸・アクリル酸イソブチル共重合体（エチレン単位含有量：８０質量％、メタクリル酸単位含有量：１０質量％、アクリル酸イソブチル単位含有量：１０質量％）
　金属カチオン源：亜鉛
　中和度：７０％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：１．０ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：９０ＭＰａ
（４）アイオノマー（ＩＯ－１４）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８９質量％、メタクリル酸単位含有量：１１質量％）
　金属カチオン源：亜鉛
　中和度：６５％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．０ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：２６０ＭＰａ
（５）アイオノマー（ＩＯ－１５）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：亜鉛
　中和度：２３％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：５．０ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：２００ＭＰａ
（６）アイオノマー（ＩＯ－１６）
　ベースポリマー：エチレン・メタクリル酸共重合体（エチレン単位含有量：８５質量％、メタクリル酸単位含有量：１５質量％）
　金属カチオン源：亜鉛
　中和度：５９％
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：０．９ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：３１０ＭＰａ -1. raw materials-
(1) Ionomer (IO-11)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Magnesium Neutralization degree: 35%
MFR (190 ° C., 2160 g load): 5.9 g / 10 minutes Flexural rigidity (according to JIS K 7106): 330 MPa
(2) Ionomer (IO-12)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Magnesium Neutralization degree: 54%
MFR (190 ° C., 2160 g load): 0.7 g / 10 min Flexural rigidity (according to JIS K 7106): 320 MPa
(3) Ionomer (IO-13)
Base polymer: ethylene / methacrylic acid / isobutyl acrylate copolymer (ethylene unit content: 80 mass%, methacrylic acid unit content: 10 mass%, isobutyl acrylate unit content: 10 mass%)
Metal cation source: Zinc Neutralization degree: 70%
MFR (190 ° C., 2160 g load): 1.0 g / 10 min Flexural rigidity (according to JIS K 7106): 90 MPa
(4) Ionomer (IO-14)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 89% by mass, methacrylic acid unit content: 11% by mass)
Metal cation source: Zinc Neutralization degree: 65%
MFR (190 ° C., 2160 g load): 5.0 g / 10 min Flexural rigidity (according to JIS K 7106): 260 MPa
(5) Ionomer (IO-15)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Zinc Neutralization degree: 23%
MFR (190 ° C., 2160 g load): 5.0 g / 10 min Flexural rigidity (according to JIS K 7106): 200 MPa
(6) Ionomer (IO-16)
Base polymer: ethylene / methacrylic acid copolymer (ethylene unit content: 85% by mass, methacrylic acid unit content: 15% by mass)
Metal cation source: Zinc Neutralization degree: 59%
MFR (190 ° C., 2160 g load): 0.9 g / 10 min Flexural rigidity (according to JIS K 7106): 310 MPa
（７）エチレン・（メタ）アクリル酸共重合体（ＥＭＡＡ）
　エチレン・メタクリル酸共重合体（エチレン単位含有量：９１質量％、メタクリル酸単位含有量：９質量％）
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：３．０ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：１４０ＭＰａ
（８）エチレン・酢酸ビニル共重合体（ＥＶＡ）
　エチレン・酢酸ビニル共重合体（エチレン単位含有量：８１質量％、酢酸ビニル単位含有量：１９質量％）
　ＭＦＲ（１９０℃、２１６０ｇ荷重）：２．５ｇ／１０分
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：４０ＭＰａ (7) Ethylene / (meth) acrylic acid copolymer (EMAA)
Ethylene / methacrylic acid copolymer (ethylene unit content: 91% by mass, methacrylic acid unit content: 9% by mass)
MFR (190 ° C., 2160 g load): 3.0 g / 10 min Flexural rigidity (according to JIS K 7106): 140 MPa
(8) Ethylene / vinyl acetate copolymer (EVA)
Ethylene / vinyl acetate copolymer (ethylene unit content: 81% by mass, vinyl acetate unit content: 19% by mass)
MFR (190 ° C., 2160 g load): 2.5 g / 10 min Flexural rigidity (according to JIS K 7106): 40 MPa
（９）ポリオレフィン（Ｃ１）
　線状低密度ポリエチレン（ＬＬＤＰＥ：（株）プライムポリマー製、エボリューＳＰ２３２０、密度：９１９ｋｇ／ｍ３、ＭＦＲ：１．９ｇ／１０分）
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：２４０ＭＰａ
（１０）ポリオレフィン（Ｃ２）
　低密度ポリエチレン（ＬＤＰＥ：密度：９２０ｋｇ／ｍ３、ＭＦＲ：１．６ｇ／１０分）
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：１４０ＭＰａ
（１１）ポリオレフィン（Ｃ３）
　ランダムポリプロピレン（ｒ－ＰＰ:（株）プライムポリマー製、プライムポリプロＦ２１９ＤＡ、密度：９１０ｋｇ／ｍ３、ＭＦＲ：８．０ｇ／１０分）
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：９６０ＭＰａ
（１２）　ポリオレフィン（Ｃ４）
　ホモポリプロピレン（ホモ－ＰＰ:（株）プライムポリマー製、プライムポリプロＦ１１３ＤＡ、密度：９１０ｋｇ／ｍ３、ＭＦＲ：３．０ｇ／１０分）
　曲げ剛性率（ＪＩＳ　Ｋ　７１０６準拠）：１２９０ＭＰａ (9) Polyolefin (C1)
Linear low density polyethylene (LLDPE: Prime Polymer, Evolue SP2320, density: 919 kg / m 3 , MFR: 1.9 g / 10 min)
Flexural rigidity (according to JIS K 7106): 240 MPa
(10) Polyolefin (C2)
Low density polyethylene (LDPE: density: 920 kg / m 3 , MFR: 1.6 g / 10 min)
Flexural rigidity (conforming to JIS K 7106): 140 MPa
(11) Polyolefin (C3)
Random polypropylene (r-PP: Prime Polymer, Prime Polypro F219DA, density: 910 kg / m 3 , MFR: 8.0 g / 10 min)
Flexural rigidity (according to JIS K 7106): 960 MPa
(12) Polyolefin (C4)
Homopolypropylene (Homo-PP: Prime Polymer Co., Ltd., Prime Polypro F113DA, density: 910 kg / m 3 , MFR: 3.0 g / 10 min)
Flexural rigidity (according to JIS K 7106): 1290 MPa
（１３）ポリエーテルエステル成分（Ｂ－１）
　商品名：イルガスタットＰ－１６、ＢＡＳＦジャパン（株）製
（１４）ポリエーテルエステル成分（Ｂ－２）
　商品名：イルガスタットＰ－１８、ＢＡＳＦジャパン（株）製
（１５）ポリエーテルエステル成分（Ｂ－４）
　商品名：ペレスタット２３０、三洋化成工業（株）製（融点（ＤＳＣ測定）：１６３℃） (13) Polyetherester component (B-1)
Product name: Irgastat P-16, manufactured by BASF Japan Ltd. (14) Polyether ester component (B-2)
Product name: Irgastat P-18, manufactured by BASF Japan Ltd. (15) Polyether ester component (B-4)
Product name: Pelestat 230, manufactured by Sanyo Chemical Industries, Ltd. (melting point (DSC measurement): 163 ° C.)
－２．物性測定方法－
　ステルスダイシング用フィルム基材の物性については、後述する実施例及び比較例で製造したアイオノマーフィルム基材等を用いて測定を行なった。測定及び評価の結果は、下記表３～表５に示す。 -2. Physical property measurement method
About the physical property of the film base material for stealth dicing, it measured using the ionomer film base material etc. which were manufactured by the Example and comparative example which are mentioned later. The results of measurement and evaluation are shown in Tables 3 to 5 below.
（１）初期応力
　作製した各ステルスダイシング用フィルム基材の縦（ＭＤ）方向について、ＪＩＳ　Ｋ　７１２７に準拠し、下記の条件下で６％伸長したときの応力を測定した。
　<条件>
・試験速度：５００ｍｍ／ｓｅｃ
・試験片：幅１０ｍｍ×長２００ｍｍ
・チャック間：１００ｍｍ (1) Initial stress About the machine direction (MD) direction of each produced film base material for stealth dicing, based on JISK7127, the stress when extending 6% on the following conditions was measured.
<Condition>
・ Test speed: 500mm / sec
・ Test specimen: width 10 mm x length 200 mm
-Between chucks: 100mm
（２）ヘイズ・分断性
　作製した各ステルスダイシング用フィルム基材について、上記〔Ａ〕における場合と同様の方法にて、測定及び評価を行なった。 (2) Haze / Severability About each produced stealth dicing film base material, it measured and evaluated by the method similar to the case in said [A].
（３）全光線透過率
　作製した各ステルスダイシング用フィルム基材について、（株）村上色彩研究所製のＨＭ－１５０型を用い、２３℃、５０％相対湿度雰囲気下で、ＪＩＳ　Ｋ　７３６１に準拠して測定した。 (3) Total light transmittance About each produced stealth dicing film base material, using HM-150 type made by Murakami Color Research Co., Ltd., compliant with JIS K 7361 under an atmosphere of 23 ° C. and 50% relative humidity. And measured.
（４）拡張性（拡張率）
　作製した各ステルスダイシング用フィルム基材から縦（フィルムのＭＤ方向）３００ｍｍ以上×横（フィルムのＴＤ方向）３００ｍｍ以上の４角形のフィルム基材片を切り取り、この切り取ったフィルム基材片に、１４１ｍｍ角の正方形を油性ペン等の筆記用具を用いて描いた（以下、測定対象２）。上記〔Ａ〕と同様の方法にて、測定対象２に描いた正方形の各辺の長さ（辺長）を測定し、得られた辺長４点について、それぞれ伸び率（％；＝拡張後の辺長／拡張前の辺長×１００）を計算し、その平均値を求め、拡張率［％］とした。また、拡張後のフィルムに白化現象が発生する（有り）、発生しない（なし）を目視で確認した。 (4) Expandability (expansion rate)
From each of the produced film substrates for stealth dicing, a rectangular film substrate piece of 300 mm or more in the vertical direction (MD direction of the film) × 300 mm or more in the horizontal direction (TD direction of the film) was cut, and 141 mm was added to the cut film substrate piece. A square of the corner was drawn using a writing instrument such as an oil pen (hereinafter, measurement object 2). The length (side length) of each side of the square drawn on the measuring object 2 is measured by the same method as in [A] above, and the elongation percentage (%; = after expansion) is obtained for each of the obtained four side lengths. Side length / side length before expansion × 100) was calculated, and the average value was obtained as the expansion rate [%]. Further, it was visually confirmed that the whitening phenomenon occurred (exists) or did not occur (none) in the expanded film.
（５）曲げ剛性率（オルゼン式）
　原材料を１９０℃に設定したプレス成形機にてプレス成形し、２５０ｍｍ×２５０ｍｍ、２ｍｍ厚のプレスシートを作成した。作成した２ｍｍ厚のシートについて、ＪＩＳ　Ｋ　７１０６に準拠し、曲げ剛性率を測定した。 (5) Flexural rigidity (Olsen type)
The raw material was press-molded with a press molding machine set at 190 ° C., and a 250 mm × 250 mm, 2 mm thick press sheet was prepared. About the created 2 mm thickness sheet | seat, the bending rigidity was measured based on JISK7106.
［実施例２８］
　スクリュ径が４５ｍｍφの３種３層インフレーション成形機を使用し、粘着層と接する層Ｘ形成用樹脂としてＩＯ－１２（Ｍｇ）を、層Ｙ形成用樹脂としてＩＯ－１３（Ｚｎ）を、層Ｚ形成用樹脂としてＩＯ－１２（Ｍｇ）を用いて、ダイス温度：２２０℃の条件で、粘着層と接する層Ｘ／層Ｙ／層Ｚの重層構造を有する３層フィルム（総厚８０μｍ；ステルスダイシング用フィルム基材）を作製した。この３層フィルムの粘着層と接する層Ｘ、層Ｙ、及び層Ｚの層厚は、それぞれ２５μｍ、３０μｍ、及び２５μｍである。続いて、作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。結果は、下記表３に示す。 [Example 28]
Using a three-type three-layer inflation molding machine with a screw diameter of 45 mmφ, IO-12 (Mg) as layer X forming resin in contact with the adhesive layer, IO-13 (Zn) as layer Y forming resin, and layer Z Using IO-12 (Mg) as a forming resin, a three-layer film having a multilayer structure of layer X / layer Y / layer Z in contact with the adhesive layer at a die temperature of 220 ° C. (total thickness 80 μm; stealth dicing Film base material). The layer thicknesses of the layer X, the layer Y, and the layer Z that are in contact with the adhesive layer of the three-layer film are 25 μm, 30 μm, and 25 μm, respectively. Subsequently, the initial stress, haze, total light transmittance, and expansion rate were measured for the produced three-layer film. The results are shown in Table 3 below.
［実施例２９］
　アイオノマー（ＩＯ－１１（Ｍｇ））８５質量部、イルガスタットＰ－１６（ポリエーテルエステル成分（Ｂ－１））７．５質量部、及びイルガスタットＰ－１８（ポリエーテルエステル成分（Ｂ－２））７．５質量部を、スクリュ径が４０ｍｍφの単軸押出機により溶融混練し、粘着層と接する層Ｘ及び層Ｚを形成するためのアイオノマー組成物を調製した。次に、実施例１において、粘着層と接する層Ｘ形成用樹脂としてこのアイオノマー組成物を、層Ｙ形成用樹脂としてＩＯ－１４（Ｚｎ）を用いると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例１と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。併せて、表面抵抗率を測定したところ、表面抵抗率は、１．７×１０１4Ω／sqであった。 [Example 29]
Ionomer (IO-11 (Mg)) 85 parts by mass, Irgastat P-16 (polyetherester component (B-1)) 7.5 parts by mass, and Irgastat P-18 (polyetherester component (B-2) )) 7.5 parts by mass were melt-kneaded with a single screw extruder having a screw diameter of 40 mmφ to prepare an ionomer composition for forming layer X and layer Z in contact with the adhesive layer. Next, in Example 1, this ionomer composition is used as the layer X forming resin in contact with the adhesive layer, IO-14 (Zn) is used as the layer Y forming resin, and the die temperature is changed from 220 ° C. to 210 ° C. A three-layer film was produced in the same manner as in Example 1 except that. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below. In addition, when the surface resistivity was measured, the surface resistivity was 1.7 × 10 14 Ω / sq.
［実施例３０］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１５（Ｚｎ）に、層Ｚ形成用樹脂をＩＯ－１５（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２００℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 30]
In Example 28, the layer X forming resin in contact with the adhesive layer was changed to IO-15 (Zn), the layer Z forming resin was changed to IO-15 (Zn), and the die temperature was changed from 220 ° C. to 200 ° C. A three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３１］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１４（Ｚｎ）に、層Ｚ形成用樹脂をＩＯ－１４（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２００℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 31]
In Example 28, the layer X forming resin in contact with the adhesive layer was changed to IO-14 (Zn), the layer Z forming resin was changed to IO-14 (Zn), and the die temperature was changed from 220 ° C. to 200 ° C. A three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３２］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ１に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ（Ａ）、層Ｙ、及び層Ｚの層厚を、それぞれ２８μｍ、２１μｍ、及び３０μｍとしたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 32]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. The same as Example 28, except that the temperature was changed from 220 ° C. to 210 ° C., and the thicknesses of the layers X (A), Y, and Z of the three-layer film were 28 μm, 21 μm, and 30 μm, respectively. Thus, a three-layer film was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３３］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ１に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 33]
In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with C1, and the layer Z-forming resin is replaced with IO-16 (Zn). A three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３４］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ１に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの粘着層と接する層Ｘ、層Ｙ、及び層Ｚの層厚をそれぞれ２０μｍ、４０μｍ、及び２０μｍとしたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記した。 [Example 34]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. The same as Example 28, except that the layer thicknesses of layer X, layer Y, and layer Z in contact with the adhesive layer of the three-layer film were changed from 220 ° C. to 210 ° C. to 20 μm, 40 μm, and 20 μm, respectively. Thus, a three-layer film was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３５］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＥＭＡＡに、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２００℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 35]
In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with EMAA, and the layer Z-forming resin is replaced with IO-16 (Zn). A three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 200 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３６］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 36]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed from 220 ° C. to 210 ° C. A three-layer film was produced in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３７］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＥＶＡに、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記する。 [Example 37]
In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with EVA, and the layer Z-forming resin is replaced with IO-16 (Zn). A three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３８］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ２に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ２８μｍ、２２μｍ、及び３０μｍ（３層フィルムの総厚み：８０μｍ）に変えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記した。 [Example 38]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film to 28 μm, 22 μm, and 30 μm, respectively (total thickness of the three-layer film: 80 μm) Produced a three-layer film in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例３９］
　スクリュ径が４０ｍｍφの３種３層キャストフィルム成形機を用いて、粘着層と接する層Ｘ形成用樹脂としてＩＯ－１６（Ｚｎ）を、層Ｙ形成用樹脂としてＥＭＡＡを、層Ｚ形成用樹脂としてＩＯ－１６（Ｚｎ）を使用し、ダイス温度：２１０℃の条件で、粘着層と接する層Ｘ／層Ｙ／層Ｚの重層構造を有する３層フィルム（総厚７７μｍ；ステルスダイシング用フィルム基材）を作製した。この作製した３層フィルムの粘着層と接する層Ｘ、層Ｙ、及び層Ｚの層厚は、それぞれ２９μｍ、２０μｍ、及び２８μｍである。続いて、作成した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記した。 [Example 39]
Using a three-type three-layer cast film molding machine with a screw diameter of 40 mmφ, IO-16 (Zn) is used as the layer X forming resin in contact with the adhesive layer, EMAA is used as the layer Y forming resin, and layer Z forming resin is used. A three-layer film having a multilayer structure of layer X / layer Y / layer Z in contact with the adhesive layer using IO-16 (Zn) at a die temperature of 210 ° C. (total thickness 77 μm; film substrate for stealth dicing) ) Was produced. The layer thicknesses of the layer X, the layer Y, and the layer Z that are in contact with the adhesive layer of the produced three-layer film are 29 μm, 20 μm, and 28 μm, respectively. Subsequently, the initial stress, haze, total light transmittance, and expansion rate were measured for the prepared three-layer film. These results are also shown in Table 3 below.
［実施例４０］
　実施例３９において、層Ｙ形成用樹脂をＣ１に代えたこと以外は、実施例３９と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記した。 [Example 40]
In Example 39, a three-layer film was produced in the same manner as in Example 39 except that the layer Y forming resin was changed to C1. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below.
［実施例４１］
　アイオノマー（ＩＯ－１６（Ｚｎ））８５質量部、及びペレスタット２３０（Ｂ－４）１５質量部を、スクリュ径が３０ｍｍφの二軸押出機により溶融混練し、粘着層と接する層Ｘ及び層Ｚを形成するためのアイオノマー組成物を調製した。次に、実施例２８において、粘着層と接する層Ｘ形成用樹脂としてこのアイオノマー組成物を、層Ｙ形成用樹脂Ｃ２を、層Ｚ形成用樹脂をこのアイオノマー樹脂組成物を用いると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表３に併記した。併せて表面抵抗率を測定した。表面抵抗率は、１．３×１０１０Ω／sqであった。 [Example 41]
85 parts by mass of ionomer (IO-16 (Zn)) and 15 parts by mass of perestat 230 (B-4) were melt-kneaded by a twin screw extruder having a screw diameter of 30 mmφ, and layer X and layer Z in contact with the adhesive layer were obtained. An ionomer composition was prepared for forming. Next, in Example 28, the ionomer composition is used as the layer X-forming resin in contact with the adhesive layer, the layer Y-forming resin C2, the layer Z-forming resin is used as the ionomer resin composition, and the die temperature is set. A three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 3 below. In addition, the surface resistivity was measured. The surface resistivity was 1.3 × 10 10 Ω / sq.
［実施例４２］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ１に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様の条件で、層Ｘ／層Ｚ／層Ｙの重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記する。 [Example 42]
In Example 28, the layer X-forming resin in contact with the adhesive layer is replaced with IO-16 (Zn), the layer Y-forming resin is replaced with C1, and the layer Z-forming resin is replaced with IO-16 (Zn). A three-layer film having a multilayer structure of layer X / layer Z / layer Y was produced under the same conditions as in Example 28 except that was changed from 220 ° C. to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
［実施例４３］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ２に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ３０μｍ、２０μｍ、及び３０μｍ（３層フィルムの総厚み：８０μｍ）に代えたこと以外は、実施例２８と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。 [Example 43]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film to 30 μm, 20 μm, and 30 μm, respectively (total thickness of the three-layer film: 80 μm) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
［実施例４４］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ２に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ２０μｍ、３０μｍ、及び３０μｍ（３層フィルムの総厚み：８０μｍ）に代えたこと以外は、実施例２８と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。 [Example 44]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 20 μm, 30 μm, and 30 μm, respectively (total thickness of the three-layer film: 80 μm) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
［実施例４５］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ２に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ２０μｍ、４０μｍ、及び２０μｍ（３層フィルムの総厚み：８０μｍ）に代えたこと以外は、実施例２８と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。 [Example 45]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 20 μm, 40 μm, and 20 μm, respectively (total thickness of the three-layer film: 80 μm) Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
［実施例４６］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ２に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ１５μｍ、５０μｍ、及び１５μｍ（３層フィルムの総厚み：８０μｍ）に代えたこと以外は、実施例２８と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。 [Example 46]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C2, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 15 μm, 50 μm, and 15 μm (total thickness of the three-layer film: 80 μm), respectively. Produced a three-layer film having a multilayer structure of layer X / layer Z / layer Y in the same manner as in Example 28. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below.
［実施例４７］
　アイオノマー（ＩＯ－１６（Ｚｎ））８５質量部、及びペレスタット２３０（Ｂ－４）１５質量部を、スクリュ径が３０ｍｍφの二軸押出機により溶融混練し、粘着層と接する層Ｘを形成するためのアイオノマー組成物を調製した。また、アイオノマー（ＩＯ－１３（Ｚｎ））８５質量部、及びペレスタット２３０（Ｂ－４）１５質量部を、スクリュ径が３０ｍｍφの二軸押出機により溶融混練し、層Ｚを形成するためのアイオノマー組成物Ｚを調製した。
　次に、実施例２８において、粘着層と接する層Ｘ形成用樹脂としてこのアイオノマー組成物を、層Ｙ形成用樹脂としてＣ２を、層Ｚ形成用樹脂としてこのアイオノマー樹脂組成物Ｚを用い、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ４５μｍ、１５μｍ、及び３０μｍ（３層フィルムの総厚み：９０μｍ）に代えたこと以外は、実施例２８と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。併せて表面抵抗率を測定した。表面抵抗率は、１．５×１０１１Ω／sqであった。 [Example 47]
To melt and knead 85 parts by mass of ionomer (IO-16 (Zn)) and 15 parts by mass of perestat 230 (B-4) with a twin screw extruder having a screw diameter of 30 mmφ to form layer X in contact with the adhesive layer An ionomer composition was prepared. Further, an ionomer for forming layer Z by melt-kneading 85 parts by mass of ionomer (IO-13 (Zn)) and 15 parts by mass of perestat 230 (B-4) with a twin screw extruder having a screw diameter of 30 mmφ. Composition Z was prepared.
Next, in Example 28, using this ionomer composition as the layer X forming resin in contact with the adhesive layer, using C2 as the layer Y forming resin, and using this ionomer resin composition Z as the layer Z forming resin, the die temperature Was changed from 220 ° C. to 210 ° C., and the layer thicknesses of layer X, layer Y, and layer Z of the three-layer film were changed to 45 μm, 15 μm, and 30 μm, respectively (total thickness of the three-layer film: 90 μm). A three-layer film having a multilayer structure of layer X / layer Z / layer Y was prepared in the same manner as in Example 28 except for the above. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below. In addition, the surface resistivity was measured. The surface resistivity was 1.5 × 10 11 Ω / sq.
［実施例４８］
　実施例４７において、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ３５μｍ、１５μｍ、及び４０μｍ（３層フィルムの総厚み：９０μｍ）に代えたこと以外は、実施例４７と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。併せて表面抵抗率を測定した。表面抵抗率は、２．１×１０１１Ω／sqであった。 [Example 48]
Example 47 In Example 47, except that the layer thicknesses of the layer X, layer Y, and layer Z of the three-layer film were changed to 35 μm, 15 μm, and 40 μm (total thickness of the three-layer film: 90 μm), respectively. In the same manner as above, a three-layer film having a multilayer structure of layer X / layer Z / layer Y configuration was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below. In addition, the surface resistivity was measured. The surface resistivity was 2.1 × 10 11 Ω / sq.
［実施例４９］
　実施例４７において、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ４０μｍ、１５μｍ、及び２５μｍ（３層フィルムの総厚み：８０μｍ）に代えたこと以外は、実施例４７と同様にして、層Ｘ／層Ｚ／層Ｙ構成の重層構造を有する３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表４に併記した。併せて、表面抵抗率を測定したところ、表面抵抗率は１．７×１０１１Ω／sqであった。 [Example 49]
Example 47 In Example 47, except that the layer thicknesses of the layer X, layer Y, and layer Z of the three-layer film were changed to 40 μm, 15 μm, and 25 μm (total thickness of the three-layer film: 80 μm), respectively. In the same manner as above, a three-layer film having a multilayer structure of layer X / layer Z / layer Y configuration was produced. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 4 below. In addition, when the surface resistivity was measured, the surface resistivity was 1.7 × 10 11 Ω / sq.
［比較例６］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１３（Ｚｎ）に、層Ｚ形成用樹脂をＩＯ－１３（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にしてフィルムを作製した。ここで、各層はいずれもＩＯ－１３（Ｚｎ）を用いて形成されており、実質的に作製したフィルムは単一層からなる。また、作製したフィルムに対して、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表５に併記する。 [Comparative Example 6]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-13 (Zn), the layer Z forming resin was replaced with IO-13 (Zn), and the die temperature was changed from 220 ° C. to 210 ° C. A film was produced in the same manner as in Example 28 except for the above. Here, each layer is formed using IO-13 (Zn), and the substantially produced film is composed of a single layer. Moreover, with respect to the produced film, the initial stress, haze, total light transmittance, and expansion rate were measured. These results are also shown in Table 5 below.
［比較例７］
　実施例３９において、粘着層と接する層Ｘ形成用樹脂をＣ４に、層Ｙ形成用樹脂をＣ４に、層Ｚ形成用樹脂をＣ４に代え、ダイス温度を２１０℃から２４０℃に代え、かつ、総厚みを８０μｍとした以外は、実施例３９と同様にしてフィルムを作製した。ここで、各層はいずれもＣ４を用いて形成されており、実質的に作製したフィルムは単一層からなる。また、作製したフィルムに対して、初期応力、及び拡張率の測定を行なった。これらの結果を下記表５に併記する。 [Comparative Example 7]
In Example 39, the layer X forming resin in contact with the adhesive layer is changed to C4, the layer Y forming resin is changed to C4, the layer Z forming resin is changed to C4, the die temperature is changed from 210 ° C. to 240 ° C., and A film was produced in the same manner as in Example 39 except that the total thickness was 80 μm. Here, each layer is formed using C4, and the substantially produced film consists of a single layer. Moreover, the initial stress and the expansion rate were measured with respect to the produced film. These results are also shown in Table 5 below.
［比較例８］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ１に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代え、ダイス温度を２２０℃から２１０℃に代え、かつ、３層フィルムの層Ｘ、層Ｙ、及び層Ｚの層厚を、それぞれ７０μｍ、９０μｍ、及び７０μｍ（３層フィルムの総厚み：２３０μｍ）に変えたこと以外は、実施例２８と同様にして３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、及び全光線透過率の測定を行なった。これらの結果を下記表５に併記する。また、拡張率を測定したが、ウエハ拡張装置ステージが上昇せず、測定不可（ＮＧ）であった。 [Comparative Example 8]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C1, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. Other than changing from 220 ° C. to 210 ° C. and changing the layer thicknesses of the three-layer film layers X, Y, and Z to 70 μm, 90 μm, and 70 μm (total thickness of the three-layer film: 230 μm), respectively. Produced a three-layer film in the same manner as in Example 28. About this produced three-layer film, the initial stress, the haze, and the total light transmittance were measured. These results are also shown in Table 5 below. Further, although the expansion rate was measured, the wafer expansion apparatus stage did not rise and measurement was impossible (NG).
［比較例９］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＣ２に、層Ｙ形成用樹脂をＥＶＡに、層Ｚ形成用樹脂をＣ２に代えると共に、ダイス温度を２２０℃から２００℃に代えたこと以外は、実施例２８と同様にして３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、及び全光線透過率の測定を行なった。これらの結果を下記表５に併記する。 [Comparative Example 9]
In Example 28, the layer X forming resin in contact with the adhesive layer was changed to C2, the layer Y forming resin was changed to EVA, the layer Z forming resin was changed to C2, and the die temperature was changed from 220 ° C. to 200 ° C. A three-layer film was produced in the same manner as in Example 28 except for the above. About this produced three-layer film, the initial stress, the haze, and the total light transmittance were measured. These results are also shown in Table 5 below.
［比較例１０］
　実施例２８において、粘着層と接する層Ｘ形成用樹脂をＩＯ－１６（Ｚｎ）に、層Ｙ形成用樹脂をＣ３に、層Ｚ形成用樹脂をＩＯ－１６（Ｚｎ）に代えると共に、ダイス温度を２２０℃から２１０℃に代えたこと以外は、実施例２８と同様にして、３層フィルムを作製した。この作製した３層フィルムについて、初期応力、ヘイズ、全光線透過率、及び拡張率の測定を行なった。これらの結果を下記表５に併記する。 [Comparative Example 10]
In Example 28, the layer X forming resin in contact with the adhesive layer was replaced with IO-16 (Zn), the layer Y forming resin was replaced with C3, and the layer Z forming resin was replaced with IO-16 (Zn), and the die temperature was changed. A three-layer film was produced in the same manner as in Example 28 except that the temperature was changed from 220 ° C to 210 ° C. About this produced 3 layer film, the initial stress, the haze, the total light transmittance, and the expansion rate were measured. These results are also shown in Table 5 below.
［実施例５０～６９］
　基材として、実施例２８～４９で作製したアイオノマーフィルム基材を用意し、粘着層形成用の粘着材として、紫外線硬化型アクリル系粘着剤（荒川化学工業社製のビームセット５７５（ウレタンアクリレート系オリゴマー））を用意した。
　上記の基材及び粘着剤を用いて、基材の上に、紫外線硬化型アクリル系粘着材を酢酸エチルに溶かしたものをバーコート塗布することで、図２に示すようにアイオノマーフィルム基材１１／乾燥厚み２０μｍの粘着層１２の重層構造よりなるステルスダイシング用フィルムを作製した。 [Examples 50 to 69]
As the base material, the ionomer film base materials prepared in Examples 28 to 49 were prepared, and as the adhesive material for forming the adhesive layer, an ultraviolet curable acrylic adhesive (Beamset 575 (urethane acrylate type manufactured by Arakawa Chemical Industries, Ltd.) was used. Oligomer)) was prepared.
Using the above-mentioned base material and pressure-sensitive adhesive, an ionomer film base material 11 as shown in FIG. 2 is applied on the base material by bar coating a solution obtained by dissolving an ultraviolet curable acrylic pressure-sensitive adhesive material in ethyl acetate. / A film for stealth dicing consisting of a multilayer structure of the adhesive layer 12 having a dry thickness of 20 μm was prepared.
［実施例７０～８９］
　実施例５０～６９で作製したステルスダイシング用フィルムを用いて、図３Ａに示すように、各ステルスダイシング用フィルム１の粘着層１２をウエハＷの裏面に固定し、さらにステルスダイシング用フィルム１をその粘着層１２の端部をダイシングテーブル６と接触させてダイシングテーブルに固定する。次に、ダイシングテープ１の基材１１側からレーザ光を照射し、ステルスダイシング用フィルム１を介して導光することで、図３Ｂに示すようにウエハＷの内部のダイシングラインに沿って改質部Ｗ１を形成する。その後、図４に示すように、ステルスダイシング用フィルム１の端部を矢印方向に引っ張ってフィルムを拡張し、改質部Ｗ１を起点として複数に分割する。その後、粘着層１２に紫外線照射し、複数のチップを取り出すことで、所望とする電子部品が得られる。 [Examples 70 to 89]
Using the stealth dicing films prepared in Examples 50 to 69, as shown in FIG. 3A, the adhesive layer 12 of each stealth dicing film 1 was fixed to the back surface of the wafer W, and the stealth dicing film 1 was The end of the adhesive layer 12 is brought into contact with the dicing table 6 and fixed to the dicing table. Next, the laser beam is irradiated from the base material 11 side of the dicing tape 1 and guided through the stealth dicing film 1, thereby modifying along the dicing line inside the wafer W as shown in FIG. 3B. A portion W1 is formed. Thereafter, as shown in FIG. 4, the end portion of the stealth dicing film 1 is pulled in the direction of the arrow to expand the film, and is divided into a plurality of portions starting from the modified portion W1. Thereafter, the adhesive layer 12 is irradiated with ultraviolet rays, and a plurality of chips are taken out to obtain a desired electronic component.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
　前記表３～表５に示すように、実施例では、ヘイズ及び全光線透過率について良好な結果が得られているように透明性が高く、また、初期応力も良好な、ステルスダイシングに適するフィルム基材及びダイシング用フィルムが得られた。
　これに対して、比較例６及び比較例９では、ある程度のヘイズ値や光線透過率が得られるものの、初期応力が小さくなり過ぎ、ステルスダイシングでの分断性に劣る結果となった。比較例７では逆に、初期応力が高くなり過ぎ、ステルスダイシングでの拡張時に良好な拡張率が得られず、また、比較例１０では拡張することはできたものの、拡張後に白化現象を生じてしまった。そして、比較例８では、総厚が厚過ぎるために拡張性を保てず、分断性に劣っていた。 As shown in Tables 3 to 5, in Examples, films suitable for stealth dicing have high transparency so that good results are obtained with respect to haze and total light transmittance, and good initial stress. A substrate and a film for dicing were obtained.
On the other hand, in Comparative Examples 6 and 9, although a certain degree of haze value and light transmittance were obtained, the initial stress was too small, resulting in poor stealth dicing. On the contrary, in Comparative Example 7, the initial stress becomes too high, and a good expansion rate cannot be obtained during expansion by stealth dicing. In Comparative Example 10, although expansion was possible, whitening occurred after expansion. Oops. And in the comparative example 8, since total thickness was too thick, expandability was not maintained and it was inferior to parting property.
　日本出願２０１１－２８４３７９、２０１２－０５３３８９、及び２０１２－１２２５４０の開示は、その全体が参照により本明細書に取り込まれる。
　本明細書に記載された全ての文献、特許出願、及び技術規格は、個々の文献、特許出願、及び技術規格が参照により取り込まれることが具体的に、且つ、個々に記された場合と同程度に、本明細書中に参照により取り込まれる。 The disclosures of Japanese applications 2011-284379, 2012-053389, and 2012-122540 are incorporated herein by reference in their entirety.
All documents, patent applications, and technical standards described in this specification are specifically and individually incorporated by reference as if individual documents, patent applications, and technical standards were incorporated by reference. To the extent incorporated herein by reference.

Claims (15)

  1. 　粘着層と基材とを備えたステルスダイシング用フィルムの前記基材として用いられ、厚みが５０μｍ以上２００μｍ以下の範囲であり、初期応力が９ＭＰａ以上１９ＭＰａ以下の範囲であり、拡張率が１０２％以上１２０％以下の範囲であり、ヘイズ値が１０以下であり、全光線透過率が９０％以上であるステルスダイシング用フィルム基材。 Used as the base material of the stealth dicing film provided with the adhesive layer and the base material, the thickness is in the range of 50 μm to 200 μm, the initial stress is in the range of 9 MPa to 19 MPa, and the expansion rate is 102% or more A film substrate for stealth dicing having a range of 120% or less, a haze value of 10 or less, and a total light transmittance of 90% or more.
  2. 　エチレン・（メタ）アクリル酸系共重合体のマグネシウムアイオノマー及びエチレン・（メタ）アクリル酸系共重合体の亜鉛アイオノマーから選ばれ、共重合体中における（メタ）アクリル酸アルキルエステル由来の構成単位の共重合比が７質量％未満であるアイオノマー樹脂を含む請求項１に記載のステルスダイシング用フィルム基材。 It is selected from magnesium ionomer of ethylene / (meth) acrylic acid copolymer and zinc ionomer of ethylene / (meth) acrylic acid copolymer, and a structural unit derived from (meth) acrylic acid alkyl ester in the copolymer. The film base material for stealth dicing according to claim 1, comprising an ionomer resin having a copolymerization ratio of less than 7% by mass.
  3. 　前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一方の、前記（メタ）アクリル酸由来の構成単位の共重合体中における共重合比が、１０質量％を超え３０質量％以下である請求項２に記載のステルスダイシング用フィルム基材。 The copolymerization ratio in the copolymer of the structural unit derived from the (meth) acrylic acid of at least one of the magnesium ionomer and the zinc ionomer is more than 10% by mass and 30% by mass or less. Film substrate for stealth dicing.
  4. 　前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一種は、中和度が０％を超え６０％以下である請求項２又は請求項３に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to claim 2 or 3, wherein at least one of the magnesium ionomer and the zinc ionomer has a degree of neutralization of more than 0% and 60% or less.
  5. 　前記マグネシウムアイオノマー及び前記亜鉛アイオノマーの少なくとも一種は、中和度が１０％以上４０％以下である請求項２又は請求項３に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to claim 2 or 3, wherein at least one of the magnesium ionomer and the zinc ionomer has a degree of neutralization of 10% to 40%.
  6. 　前記粘着層と接する層Ｘと第１の層Ｙと第２の層Ｚとが順に重層された重層構造、又は前記粘着層と接する層Ｘと第２の層Ｚと第１の層Ｙとが順に重層された重層構造を有し、前記層Ｘ、前記層Ｙ、及び前記層Ｚの厚みが１０μｍ以上１００μｍ以下の範囲である請求項１に記載のステルスダイシング用フィルム基材。 A multilayer structure in which the layer X in contact with the adhesive layer, the first layer Y, and the second layer Z are sequentially stacked, or the layer X in contact with the adhesive layer, the second layer Z, and the first layer Y The film base material for stealth dicing according to claim 1, wherein the film base material has a multilayer structure in which layers are sequentially stacked, and the thickness of the layer X, the layer Y, and the layer Z is in the range of 10 µm to 100 µm.
  7. 　前記粘着層と接する層Ｘが樹脂Ａを含み、前記樹脂Ａの曲げ剛性率が１００ＭＰａ以上３５０ＭＰａ以下の範囲であり、前記第１の層Ｙが樹脂Ｂを含み、前記樹脂Ｂの曲げ剛性率が５ＭＰａ以上３５０ＭＰａ以下の範囲であり、前記第２の層Ｚが樹脂Ｃを含み、前記樹脂Ｃの曲げ剛性率が５０ＭＰａ以上３５０ＭＰａ以下の範囲であり、
    　前記樹脂Ａ又は前記樹脂Ｃの曲げ剛性率のそれぞれから前記樹脂Ｂの曲げ剛性率を差し引いた差の絶対値の大きい方の値が５０ＭＰａ以上３４５ＭＰａ以下の範囲内である請求項６に記載のステルスダイシング用フィルム基材。     The layer X in contact with the adhesive layer includes the resin A, the bending rigidity of the resin A is in the range of 100 MPa to 350 MPa, the first layer Y includes the resin B, and the bending rigidity of the resin B is 5 MPa or more and 350 MPa or less, the second layer Z contains the resin C, and the bending rigidity of the resin C is 50 MPa or more and 350 MPa or less.
    The stealth according to claim 6, wherein a value of a larger absolute value of a difference obtained by subtracting a bending rigidity of the resin B from each of the bending rigidity of the resin A or the resin C is in a range of 50 MPa to 345 MPa. Film substrate for dicing.
  8. 　前記粘着層と接する層Ｘが樹脂Ａを含み、前記樹脂Ａが、エチレン・不飽和カルボン酸２元共重合体のアイオノマーである請求項６又は請求項７に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to claim 6 or 7, wherein the layer X in contact with the adhesive layer contains a resin A, and the resin A is an ionomer of an ethylene / unsaturated carboxylic acid binary copolymer.
  9. 　前記２元共重合体中における不飽和カルボン酸から導かれる構成単位の含有量は、１質量％以上３５質量％以下である請求項８に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to claim 8, wherein the content of the structural unit derived from the unsaturated carboxylic acid in the binary copolymer is 1% by mass or more and 35% by mass or less.
  10. 　前記第１の層Ｙが樹脂Ｂを含み、前記樹脂Ｂが、低密度ポリエチレン、直鎖状低密度ポリエチレン、エチレン酢酸ビニル共重合体、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、エチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸エステル２元共重合体から選ばれる少なくとも１種である請求項６～請求項９のいずれか１項に記載のステルスダイシング用フィルム基材。 The first layer Y includes a resin B, and the resin B is a low density polyethylene, a linear low density polyethylene, an ethylene vinyl acetate copolymer, an ethylene / unsaturated carboxylic acid binary copolymer, and an ionomer thereof. The ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid terpolymer and its ionomer, and at least one selected from ethylene-unsaturated carboxylic acid ester terpolymers. The film base material for stealth dicing according to any one of the above.
  11. 　前記第２の層Ｚが樹脂Ｃを含み、前記樹脂Ｃが、エチレン・不飽和カルボン酸２元共重合体及びそのアイオノマー、並びにエチレン・不飽和カルボン酸・不飽和カルボン酸エステル３元共重合体及びそのアイオノマーから選ばれる少なくとも１種である請求項６～請求項１０のいずれか１項に記載のステルスダイシング用フィルム基材。 The second layer Z contains a resin C, and the resin C is an ethylene / unsaturated carboxylic acid binary copolymer and its ionomer, and an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester ternary copolymer. The stealth dicing film substrate according to any one of claims 6 to 10, which is at least one selected from the group consisting of an ionomer and an ionomer thereof.
  12. 　融点が１５５℃以上１８５℃以下の帯電防止剤を含む請求項１～請求項１１のいずれか１項に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to any one of claims 1 to 11, comprising an antistatic agent having a melting point of 155 ° C or higher and 185 ° C or lower.
  13. 　表面抵抗率が、１．０×１０９Ω／sq以上１．０×１０１２Ω／sq以下である請求項１～請求項１２のいずれか１項に記載のステルスダイシング用フィルム基材。 The film substrate for stealth dicing according to any one of claims 1 to 12, which has a surface resistivity of 1.0 x 10 9 Ω / sq to 1.0 x 10 12 Ω / sq.
  14. 　粘着層と、請求項１～請求項１３のいずれか１項に記載のステルスダイシング用フィルム基材とを備えたステルスダイシング用フィルム。 A stealth dicing film comprising an adhesive layer and the stealth dicing film substrate according to any one of claims 1 to 13.
  15. 　ウエハの裏面に請求項１４に記載のステルスダイシング用フィルムを貼り付ける工程と、
    　前記ステルスダイシング用フィルムが貼り付けられたウエハに対し、前記ステルスダイシング用フィルム側からレーザ光を照射し、ステルスダイシング用フィルムを介してレーザ光により前記ウエハをダイシングする工程と、を含む電子部品の製造方法。     Attaching the film for stealth dicing according to claim 14 to the back surface of the wafer;
    Irradiating the wafer with the stealth dicing film a laser beam from the stealth dicing film side, and dicing the wafer with the laser beam through the stealth dicing film. Production method.
PCT/JP2012/083154 2011-12-26 2012-12-20 Substrate for stealth dicing film, film for stealth dicing, and method for manufacturing electronic component WO2013099778A1 (en)

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KR1020147019552A KR20140102756A (en) 2011-12-26 2012-12-20 Substrate for stealth dicing film, film for stealth dicing, and method for manufacturing electronic component
KR1020167010280A KR101742647B1 (en) 2011-12-26 2012-12-20 Substrate for stealth dicing film, film for stealth dicing, and method for manufacturing electronic component
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