JP3310557B2 - Liquid resin composition for flow stop frame and semiconductor device using the same - Google Patents

Liquid resin composition for flow stop frame and semiconductor device using the same

Info

Publication number
JP3310557B2
JP3310557B2 JP28492696A JP28492696A JP3310557B2 JP 3310557 B2 JP3310557 B2 JP 3310557B2 JP 28492696 A JP28492696 A JP 28492696A JP 28492696 A JP28492696 A JP 28492696A JP 3310557 B2 JP3310557 B2 JP 3310557B2
Authority
JP
Japan
Prior art keywords
resin composition
liquid resin
stop frame
silica
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28492696A
Other languages
Japanese (ja)
Other versions
JPH10130470A (en
Inventor
光 大久保
竜一 村山
豊 松田
敏郎 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP28492696A priority Critical patent/JP3310557B2/en
Publication of JPH10130470A publication Critical patent/JPH10130470A/en
Application granted granted Critical
Publication of JP3310557B2 publication Critical patent/JP3310557B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ＩＣ、ＬＳＩ等の
半導体素子を、外部からの化学的及び物理的な作用から
保護する封止用液状樹脂の、流れ止め枠用樹脂組成物に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for a flow stopping frame, which is a liquid resin for sealing which protects semiconductor elements such as ICs and LSIs from external chemical and physical effects. is there.

【０００２】[0002]

【従来の技術】近年のエレクトロニクス産業の発展に伴
い、トランジスタ、ＩＣ、ＬＳＩ、超ＬＳＩ等の半導体
製品の性能も著しく向上し、パッケージの形態もＤＩ
Ｐ、ＳＯＩＣといった低ピンのものから、ＱＦＰ等の多
ピンのものに推移してきている。特に多ピンの製品にお
いては、ピン数が３００ピンを越えてくると、ピン間隔
が必然的に狭くなり、基板へのマウントが困難になって
きている。これに対し、ピングリッドアレイ（ＰＧＡ）
或いはボールグリッドアレイ（ＢＧＡ）といったパッケ
ージは、ピンの配列が２次元なので、同じピン数、同じ
パッケージサイズでもピン間隔を広くとることが可能な
ため、マウントが容易である。更に、グリッドアレイタ
イプのパッケージは、従来からセラミック基板を使用し
て生産されていたが、近年では、コスト削減、高周波数
の製品の場合は電気的な損失が少ない等の理由で、プラ
スチック化が進んできている。このプラスチックピング
リッドアレイ（ＰＰＧＡ）或いはプラスチックボールグ
リッドアレイ（ＰＢＧＡ）においては、成形材料を用い
トランスファーモールドにより封止するタイプのパッケ
ージと、封止用液状樹脂組成物をポッティングし封止す
るタイプのパッケージとに二分されるが、金型が不必要
で、設計変更及び製品化が容易である点で、液状封止タ
イプが有利であるため、近年急速に開発が進んでいる。2. Description of the Related Art With the recent development of the electronics industry, the performance of semiconductor products such as transistors, ICs, LSIs, VLSIs and the like has been remarkably improved, and the package form has been changed to DI.
The number of pins is low, such as P and SOIC, and the number of pins is high, such as QFP. In particular, in the case of multi-pin products, when the number of pins exceeds 300 pins, the pin interval is inevitably narrowed, and mounting on a substrate becomes difficult. On the other hand, a pin grid array (PGA)
Alternatively, a package such as a ball grid array (BGA) has a two-dimensional arrangement of pins, so that even with the same number of pins and the same package size, the pin interval can be widened, so that mounting is easy. Furthermore, grid array type packages have conventionally been produced using ceramic substrates, but in recent years plasticization has been used for reasons such as cost reduction and low electrical loss for high frequency products. It is progressing. In this plastic pin grid array (PPGA) or plastic ball grid array (PBGA), a package in which a molding material is sealed by transfer molding and a package in which a sealing liquid resin composition is potted and sealed are used. However, the liquid sealing type is advantageous in that a mold is not required and design change and commercialization are easy, and thus development has been rapidly progressing in recent years.

【０００３】液状封止タイプのＰＰＧＡ或いはＰＢＧＡ
では、封止用液状樹脂組成物の硬化後の平滑性がパッケ
ージ自体の厚み、信頼性に影響を及ぼすため、流れ性の
良好な液状樹脂が好ましいが、逆に良好な流れ性のため
基板にキャビティを作製するか、或いは流れ止め枠を作
製する必要がある。キャビティの作製は基板コストの上
昇につながるので、高付加価値の製品では有用である
が、汎用の製品には不向きである。一方、流れ止め枠と
して、金属製或いは樹脂製の枠をプラスチック基板に接
着剤等で固定する方法も考えられるが、工程が増えるこ
と、異種界面が増えるため信頼性の低下につながること
等の理由により、流れ止め枠用の液状樹脂組成物の開発
が望まれている。ここで、封止樹脂枠を用いたＰＰＧＡ
タイプの半導体装置について、図面を用いて説明する。
図１は半導体搭載用プラスチック基板の上面図で、図２
は半導体搭載用プラスチック基板に半導体チップを搭載
し封止用液状樹脂で樹脂封止した半導体装置の断面図で
ある。図１及び図２に示すように、半導体搭載用凹部
（２）に半導体チップ（８）を搭載し、ボンディングワ
イヤ（９）で回路パターンのボンディングパッド（４）
と接続した後、予め作製した封止樹脂枠（５）を貼り付
け、封止用液状樹脂（７）で半導体チップ（８）を封止
したものである。しかし、従来の樹脂製枠に代替できる
形状維持性及び塗布安定性に優れた流れ止め枠用液状樹
脂組成物はなかった。[0003] PPGA or PBGA of liquid sealing type
In the above, since the smoothness after curing of the sealing liquid resin composition affects the thickness and reliability of the package itself, a liquid resin having good flowability is preferable. It is necessary to make a cavity or a flow stop frame. Fabricating the cavity increases the cost of the substrate and is useful for high value-added products, but is not suitable for general-purpose products. On the other hand, a method of fixing a metal or resin frame to a plastic substrate with an adhesive or the like as a flow stop frame is also conceivable. However, the reason is that the number of processes increases, and the number of different interfaces increases, leading to a decrease in reliability. Accordingly, development of a liquid resin composition for a flow stop frame has been desired. Here, PPGA using a sealing resin frame
A semiconductor device of the type will be described with reference to the drawings.
FIG. 1 is a top view of a plastic substrate for mounting a semiconductor, and FIG.
FIG. 2 is a cross-sectional view of a semiconductor device in which a semiconductor chip is mounted on a plastic substrate for mounting a semiconductor and sealed with a liquid resin for sealing. As shown in FIGS. 1 and 2, a semiconductor chip (8) is mounted in a semiconductor mounting recess (2), and a bonding pad (4) of a circuit pattern is formed by a bonding wire (9).
After the connection, the sealing resin frame (5) prepared in advance is attached, and the semiconductor chip (8) is sealed with the sealing liquid resin (7). However, there has been no liquid resin composition for a flow stop frame which is excellent in shape retention and coating stability, which can be substituted for a conventional resin frame.

【０００４】[0004]

【発明が解決しようとする課題】本発明は、塗布作業
性、形状維持性及びその安定性に優れた半導体封止用液
状樹脂の、流れ止め枠用液状樹脂組成物を提供するもの
である。SUMMARY OF THE INVENTION The present invention is to provide a liquid resin composition for a flow-stopping frame of a liquid resin for semiconductor encapsulation which is excellent in coating workability, shape maintenance and stability.

【０００５】[0005]

【課題を解決するための手段】本発明は、（Ａ）液状エ
ポキシ樹脂、（Ｂ）硬化剤、（Ｃ）表面にシラノール基
を有する一次粒子の平均粒子径が２〜５０ｎｍであるシ
リカで、該シリカのシラノール基の５０％以上と式
［１］の有機化合物とを反応させてなる疎水性のシリ
カ、及び（Ｄ）無機フィラーからなる液状樹脂組成物に
おいて、全樹脂組成物中に（Ｃ）成分の疎水性のシリカ
を１〜５重量％、（Ｄ）成分の無機フィラーを５２〜７
５重量％含む流れ止め枠用液状樹脂組成物で、特に無機
フィラーがアスペクト比１．２以下の球状シリカであ
り、更に、半導体搭載用プラスチック基板上に、前記液
状樹脂組成物で流れ止め枠を形成し、該流れ止め枠の内
側に封止用液状樹脂を注入し、流れ止め枠と封止用液状
樹脂を同時に硬化してなるものである。 Ｓｉ（Ｒ）m（Ｘ）n、 ｍ＋ｎ＝４ ［１］ （Ｒ：ＣＨ3、Ｃ2Ｈ5、Ｃ4Ｈ9、Ｃ8Ｈ17、Ｘ：Ｃｌ、Ｂ
ｒ、ＯＣＨ3、ＯＨ）SUMMARY OF THE INVENTION The present invention provides (A) a liquid
Epoxy resin, (B) curing agent, (C) silanol group on the surface
Primary particles having an average particle diameter of 2 to 50 nm
Rica has a formula of at least 50% of the silanol groups of the silica.
Hydrophobic silicone obtained by reacting with the organic compound of [1]
Mosquito, and (D) a liquid resin composition comprising an inorganic filler
In the total resin composition, the hydrophobic silica of the component (C) is used.
1-5% by weight, (D) an inorganic filler of 52 to 7
5% by weightLiquid resin composition for flow stop frames including, especially inorganic
Spherical silica filler with an aspect ratio of 1.2 or lessIn
And the liquid on the plastic substrate for mounting semiconductors.
Forming a flow stop frame with the resin composition,
Inject liquid resin for sealing on the side, and set the flow stop frame and liquid for sealing
It is obtained by simultaneously curing resins. Si (R) m (X) n, m + n = 4 [1] (R: CHThree, CTwoHFive, CFourH9, C8H17, X: Cl, B
r, OCHThree, OH)

【０００６】[0006]

【発明の実施の形態】本発明の流れ止め枠用液状樹脂組
成物は、図１及び図２に示した封止樹脂枠（５）の代わ
りに用いるものであり、図１及び図２に示した封止樹脂
枠を除去した部分に、液状樹脂組成物をニードルを用い
たラインドロー、或いはスクリーン印刷することにより
流れ止め枠を作製するものである。流れ止め枠用液状樹
脂組成物に要求される項目としては、プラスチック基板
の所定の位置に塗布した後の液状樹脂組成物の途切れ、
太さの変化等の塗布性、塗布した後の硬化物の（断面の
幅）／（断面の高さ）等の形状維持性が挙げられる。本
発明の液状樹脂組成物に用いる液状エポキシ樹脂として
は、例えば、フェノール樹脂をグリシジルエーテル化し
たもの、脂環式エポキシ樹脂、グリシジルエステル型エ
ポキシ樹脂、グリシジルアミン型エポキシ樹脂等が挙げ
られるが、構造については特に限定しない。又、ナトリ
ウム、カリウム、塩素等のイオン性不純物は極力少ない
ことが望ましい。本発明に用いる硬化剤としては、例え
ば、フェノール系化合物、有機酸無水物、アミン化合物
等が挙げられるが、構造については特に限定しない。
又、エポキシ樹脂と同様に、イオン性不純物は極力少な
いことが望ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The liquid resin composition for a flow stop frame of the present invention is used in place of the sealing resin frame (5) shown in FIGS. 1 and 2, and is shown in FIGS. The flow stop frame is produced by line drawing or screen printing of the liquid resin composition on the portion from which the sealing resin frame has been removed. As items required for the liquid resin composition for the flow stop frame, interruption of the liquid resin composition after being applied to a predetermined position of the plastic substrate,
Examples include coating properties such as a change in thickness, and shape maintaining properties such as (cross-sectional width) / (cross-sectional height) of a cured product after coating. Examples of the liquid epoxy resin used in the liquid resin composition of the present invention include glycidyl etherified phenol resin, alicyclic epoxy resin, glycidyl ester epoxy resin, and glycidylamine epoxy resin. Is not particularly limited. Further, it is desirable that ionic impurities such as sodium, potassium and chlorine are as small as possible. Examples of the curing agent used in the present invention include phenol compounds, organic acid anhydrides, and amine compounds, but the structure is not particularly limited.
Also, as with the epoxy resin, it is desirable that ionic impurities be as small as possible.

【０００７】本発明に用いる疎水性シリカは、表面にシ
ラノール基を有する一次粒子の平均粒子径が２〜５０ｎ
ｍであるシリカで、該シリカのシラノール基の５０％以
上と式［１］の有機化合物とを反応させたものである。
一次粒子の平均粒子径が２ｎｍ未満だと、かさ密度が小
さくなり過ぎ、空気中に舞い易く秤量等の仕込が困難で
あり、又、液状樹脂組成物の作製時に均一に混練しにく
く塊のまま残存し易いため、好ましくない。一方、一次
粒子の平均粒子径が５０ｎｍを越えると、期待する形状
維持性を発現しない。更に、シリカの表面を疎水処理し
ていない場合は、液状樹脂組成物の作製後、保存中に徐
々に粘度、チキソ性が低下し、塗布安定性、形状維持性
が悪化するため好ましくない。このものは、日本アエロ
ジル（株）等から容易に入手できる。疎水性シリカの添
加量としては、全液状樹脂組成物中に、１〜５重量％が
好ましい。１重量％未満だと、期待する形状維持性が望
めず、５重量％を越えると、液状樹脂組成物の粘度が高
くなり過ぎ、作業性、塗布安定性が悪化し好ましくな
い。The hydrophobic silica used in the present invention has a primary particle having a silanol group on the surface and has an average particle diameter of 2 to 50 n.
m, which is obtained by reacting 50% or more of the silanol groups of the silica with the organic compound of the formula [1].
When the average particle size of the primary particles is less than 2 nm, the bulk density is too small, it is easy to fly in the air, and it is difficult to prepare such as weighing. It is not preferable because it easily remains. On the other hand, if the average particle diameter of the primary particles exceeds 50 nm, the expected shape maintenance property is not exhibited. Further, when the surface of the silica is not subjected to the hydrophobic treatment, the viscosity and thixotropy gradually decrease during storage after the preparation of the liquid resin composition, and the application stability and the shape maintaining property are unfavorably deteriorated. This is easily available from Nippon Aerosil Co., Ltd. The amount of the hydrophobic silica to be added is preferably 1 to 5% by weight in the whole liquid resin composition. If the amount is less than 1% by weight, the expected shape maintaining properties cannot be expected. If the amount exceeds 5% by weight, the viscosity of the liquid resin composition becomes too high, and workability and coating stability deteriorate, which is not preferable.

【０００８】又、疎水性シリカと併用する無機フィラー
としては、特に限定しないが、入手の安定性などの点
で、アスペクト比１．２以下の球状シリカ粉末が好まし
い。又、イオン性不純物、並びに放射線源となるウラ
ン、トリウム等の不純物が極力少ないことが望ましい。
無機フィラーの合計含有率としては、全液状樹脂組成物
中に、５２〜７５重量％が好ましい。５２重量％未満だ
と、硬化物の熱膨張係数が大きくなり、基板等との熱膨
張係数の差が大きくなり過ぎるため、好ましくない。一
方、７５重量％を越えると、粘度が高くなり過ぎ、塗布
性が著しく悪化するので好ましくない。本発明の半導体
装置は、半導体搭載用プラスチック基板上に、前記の液
状樹脂組成物で流れ止め枠を形成し、該流れ止め枠の内
側に封止用液状樹脂を注入し、流れ止め枠と封止用液状
樹脂を同時に硬化させて作製する。流れ止め枠は、プラ
スチック基板上に形成後放置して用いてもよい。プラス
チック基板上に、液状樹脂組成物で流れ止め枠を形成す
る方法としては、例えば、図１及び図２に示した封止樹
脂枠を除去した部分に、液状樹脂組成物をニードルを用
いたラインドロー、或いはスクリーン印刷等が挙げられ
る。封止用液状樹脂としては、特に限定はしないが、前
記流れ止め枠用の液状樹脂組成物から疎水性シリカ成分
を除いた樹脂組成物が、流れ止め枠との密着性の点から
好ましい。更に、硬化後平滑な面が得られるように適正
な流動性を有するものが好ましい。The inorganic filler used in combination with the hydrophobic silica is not particularly limited, but a spherical silica powder having an aspect ratio of 1.2 or less is preferable from the viewpoint of the availability and the like. Further, it is desirable that ionic impurities and impurities such as uranium and thorium serving as radiation sources be as small as possible.
The total content of the inorganic filler is preferably from 52 to 75% by weight in the whole liquid resin composition. If it is less than 52 % by weight, the thermal expansion coefficient of the cured product becomes large, and the difference in thermal expansion coefficient with the substrate or the like becomes too large, which is not preferable. On the other hand, if it exceeds 75% by weight, the viscosity becomes too high, and the applicability is remarkably deteriorated. In the semiconductor device of the present invention, a flow stopper frame is formed on the plastic substrate for mounting a semiconductor using the liquid resin composition, and a sealing liquid resin is injected into the inside of the flow stopper frame. It is manufactured by simultaneously curing the stopping liquid resin. The flow stopper frame may be left on after being formed on the plastic substrate. As a method of forming the flow stop frame on the plastic substrate with the liquid resin composition, for example, a line using a needle using the liquid resin composition at a portion where the sealing resin frame shown in FIGS. 1 and 2 is removed is used. Draw or screen printing may be used. The liquid resin for sealing is not particularly limited, but a resin composition obtained by removing the hydrophobic silica component from the liquid resin composition for the flow stop frame is preferable from the viewpoint of adhesion to the flow stop frame. Further, those having appropriate fluidity so as to obtain a smooth surface after curing are preferable.

【０００９】本発明の液状樹脂組成物は、（Ａ）〜
（Ｄ）成分の他、必要に応じて、アミン系、リン系等の
硬化促進剤、カップリング剤、レベリング剤、消泡剤、
低応力剤等の添加剤を加え、万能混合機で混合し、真空
チャンバー内で脱泡して製造することができる。The liquid resin composition of the present invention comprises (A)
In addition to the component (D), if necessary, amine-based, phosphorus-based curing accelerators, coupling agents, leveling agents, defoamers,
It can be manufactured by adding an additive such as a low stress agent, mixing with a universal mixer, and defoaming in a vacuum chamber.

【００１０】[0010]

【実施例】【Example】

実施例１ 市販のビスフェノールＡ型エポキシ樹脂（エポキシ当量
＝１８５、加水分解性塩素量＝２０ｐｐｍ以下、２５℃
での粘度１．３ＰＳ、以下、エポキシＡという）、メチ
ルテトラヒドロ無水フタル酸（水酸基当量＝１６６、２
５℃での粘度０．４ＰＳ、以下、ＭＴＨＰＡという）、
一次粒子の平均粒子径が約１２ｎｍで、且つ表面のシラ
ノール基の約７０％をジメチルジクロロシランで処理し
た疎水性シリカ（以下、微粒シリカＡという）、球状シ
リカフィラー（アスペクト比＝１．１、平均粒径＝１１
μｍ、以下、シリカという）、及びエチレングリコール
を表１に示す割合で配合し、万能混合機を用いて混練
後、真空チャンバー内で脱泡し液状樹脂組成物を得、以
下の様に評価した。Example 1 Commercially available bisphenol A type epoxy resin (epoxy equivalent = 185, hydrolyzable chlorine amount = 20 ppm or less, 25 ° C.)
1.3PS, hereinafter referred to as epoxy A), methyltetrahydrophthalic anhydride (hydroxy equivalent: 166, 2
0.4 PS viscosity at 5 ° C, hereinafter referred to as MTHPA),
Hydrophobic silica (hereinafter, referred to as fine silica A) having an average primary particle diameter of about 12 nm and about 70% of the silanol groups on the surface treated with dimethyldichlorosilane, a spherical silica filler (aspect ratio = 1.1, Average particle size = 11
μm, hereinafter referred to as silica) and ethylene glycol in the proportions shown in Table 1, kneaded using a universal mixer, and then defoamed in a vacuum chamber to obtain a liquid resin composition, which was evaluated as follows. .

【００１１】評価方法 １．粘度：Ｅ型粘度計（３度コーン）を用いて２５℃、
２．５ｒｐｍでの値を測定した。 ２．チキソ性：Ｅ型粘度計（３度コーン）を用いて２５
℃、０．５ｒｐｍで粘度を測定し、次式によりチキソ性
を計算した。 チキソ性＝（０．５ｒｐｍでの粘度）／（２．５ｒｐｍ
での粘度） ３．保存性：２５℃で２４時間放置した後、上記１及び
２の測定法に準じて粘度及びチキソ性を測定し、初期値
と比較して、粘度及びチキソ性の変化率が±２０％以内
のものを合格とした。 ４．塗布性及び形状維持性：１９Ｇ１点ニードル（内径
＝０．７８ｍｍ）を用い、吐出圧力１．０〜２．０ｋｇ
／ｃｍ2で初期の液状樹脂組成物をプラスチック基板上
に１０ｍｍ／秒の速度で５０ｍｍ塗布し１５０℃で２時
間硬化した。 塗布性（Ａ）：塗布後の外観を目視で観察し、途切れ、
太さの変化が観察されない場合を合格とした。 形状維持性（Ｂ）：硬化後のサンプルを断面カットし、
（Ｗ＝断面の幅）／（Ｈ＝断面の高さ）の値が、３以下
の場合を合格とした。 ５．塗布性及び形状維持性の経時安定性：プラスチック
基板に塗布後、２５℃で２４時間放置した液状樹脂組成
物を上記４の（Ａ）、（Ｂ）に準じて評価した。Evaluation method Viscosity: 25 ° C. using an E-type viscometer (3 degree cone),
The value at 2.5 rpm was measured. 2. Thixotropic: 25 using E-type viscometer (3 degree cone)
The viscosity was measured at 0.5 ° C. and 0.5 ° C., and the thixotropy was calculated by the following equation. Thixotropic property = (viscosity at 0.5 rpm) / (2.5 rpm)
Viscosity at 3.) Storage property: After standing at 25 ° C. for 24 hours, the viscosity and thixotropy are measured according to the above-mentioned methods 1 and 2, and the change rate of the viscosity and thixotropy is within ± 20% as compared with the initial value. Those passed. 4. Coatability and shape maintainability: using a 19G one-point needle (inner diameter = 0.78 mm), discharge pressure 1.0 to 2.0 kg
/ Cm 2 , 50 mm of the initial liquid resin composition was applied onto a plastic substrate at a rate of 10 mm / sec and cured at 150 ° C. for 2 hours. Coating property (A): The appearance after coating was visually observed,
A case where no change in thickness was observed was regarded as acceptable. Shape maintainability (B): Cross section cut of cured sample,
A case where the value of (W = cross section width) / (H = cross section height) was 3 or less was regarded as acceptable. 5. Stability of coatability and shape retention over time: After coating on a plastic substrate, the liquid resin composition left at 25 ° C. for 24 hours was evaluated according to the above (4) (A) and (B).

【００１２】実施例２〜４ 表１の配合に従い、実施例１と同様にして液状樹脂組成
物を作製し、実施例１と同様に評価した。なお、実施例
３のＴＰＰ−Ｋは、テトラフェニルホスホニウム・テト
ラフェニルボレートである。 実施例５ 実施例１の疎水性シリカに代えて、一次粒子の平均粒子
径が約１２ｎｍで、且つ表面のシラノール基の約７０％
をオクチルトリメトキシシランで処理した疎水性シリカ
（以下、微粒シリカＢという）を使用した他は、実施例
１と同様に液状樹脂組成物を作製し、評価した。Examples 2 to 4 In accordance with the composition shown in Table 1, a liquid resin composition was prepared in the same manner as in Example 1 and evaluated in the same manner as in Example 1. In addition, TPP-K of Example 3 is tetraphenyl phosphonium tetraphenyl borate. Example 5 Instead of the hydrophobic silica of Example 1, the average primary particle size was about 12 nm, and about 70% of the silanol groups on the surface
Was prepared and evaluated in the same manner as in Example 1 except that hydrophobic silica (hereinafter, referred to as fine silica B) treated with octyltrimethoxysilane was used.

【００１３】比較例１〜４ 表２に示す配合で実施例１と同様に液状樹脂組成物を作
製し、評価した。 比較例５ 実施例１の疎水性シリカに代えて、一次粒子の平均粒子
径が約１２ｎｍで、且つ表面のシラノール基の約７０％
を疎水化処理していないシリカ（以下、微粒シリカＣと
いう）を使用した他は、実施例１と同様に液状樹脂組成
物を作製し、評価した。結果を表１、表２に示す。Comparative Examples 1 to 4 Liquid resin compositions were prepared in the same manner as in Example 1 with the formulations shown in Table 2 and evaluated. Comparative Example 5 In place of the hydrophobic silica of Example 1, the average particle size of the primary particles was about 12 nm, and about 70% of the silanol groups on the surface.
A liquid resin composition was prepared and evaluated in the same manner as in Example 1, except that silica that had not been subjected to a hydrophobizing treatment (hereinafter referred to as fine silica C) was used. The results are shown in Tables 1 and 2.

【００１４】[0014]

【表１】 [Table 1]

【００１５】[0015]

【表２】 [Table 2]

【００１６】[0016]

【発明の効果】本発明の流れ止め枠用液状樹脂組成物
は、塗布安定性及び形状維持性、経時安定性に優れてい
る。The liquid resin composition for a flow stop frame according to the present invention is excellent in coating stability, shape retention and stability over time.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 半導体搭載用プラスチック基板の上面図。FIG. 1 is a top view of a plastic substrate for mounting a semiconductor.

【図２】 図１の半導体搭載用凹部に半導体チップを搭
載し、封止用液状樹脂組成物で樹脂封止した後のＡ−
Ａ’のライン断面の拡大図。FIG. 2 is a cross-sectional view of a semiconductor chip mounted on a semiconductor mounting recess shown in FIG. 1 and sealed with a liquid resin composition for sealing;
The enlarged view of the line section of A '.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 (56)参考文献 特開 平４−332754（ＪＰ，Ａ) 特開 平５−59158（ＪＰ，Ａ) 特開 平６−25512（ＪＰ，Ａ) 特開 平５−183070（ＪＰ，Ａ) 特開 平８−97535（ＪＰ，Ａ) 実公 昭49−43873（ＪＰ，Ｙ１) (58)調査した分野(Int.Cl.7，ＤＢ名) C08L 63/00 - 63/10 C08K 3/36 C08K 9/06 H01L 21/56 H01L 23/28 - 23/29 H01L 23/31 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI H01L 23/29 H01L 23/30 R 23/31 (56) References JP-A-4-332754 (JP, A) JP-A-5 JP-A-59158 (JP, A) JP-A-6-25512 (JP, A) JP-A-5-183070 (JP, A) JP-A-8-97535 (JP, A) JP-A-49-43873 (JP, Y1) (58) Fields surveyed (Int.Cl. 7 , DB name) C08L 63/00-63/10 C08K 3/36 C08K 9/06 H01L 21/56 H01L 23/28-23/29 H01L 23/31

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 （Ａ）液状エポキシ樹脂、（Ｂ）硬化
剤、（Ｃ）表面にシラノール基を有する一次粒子の平均
粒子径が２〜５０ｎｍであるシリカで、該シリカのシラ
ノール基の５０％以上と式［１］の有機化合物とを反応
させてなる疎水性のシリカ、及び（Ｄ）無機フィラーか
らなる液状樹脂組成物において、全樹脂組成物中に
（Ｃ）成分を１〜５重量％、（Ｄ）成分を５２〜７５重
量％含むことを特徴とする流れ止め枠用液状樹脂組成
物。 Ｓｉ（Ｒ）m（Ｘ）n、 ｍ＋ｎ＝４ ［１］ （Ｒ：ＣＨ3、Ｃ2Ｈ5、Ｃ4Ｈ9、Ｃ8Ｈ17、Ｘ：Ｃｌ、Ｂ
ｒ、ＯＣＨ3、ＯＨ）1. A silica having an average particle diameter of (A) a liquid epoxy resin, (B) a curing agent, and (C) a primary particle having a silanol group on a surface of 2 to 50 nm, wherein 50% of the silanol group of the silica is used. In the liquid resin composition comprising the hydrophobic silica obtained by reacting the above with the organic compound of the formula [1] and the inorganic filler (D), the component (C) accounts for 1 to 5% by weight in the total resin composition. , (D) component is 52-75 times
A liquid resin composition for a flow stop frame, characterized in that the amount of the resin composition is in the range of 1% to 1% . Si (R) m (X) n, m + n = 4 [1] (R: CH 3, C 2 H 5, C 4 H 9, C 8 H 17, X: Cl, B
r, OCH 3 , OH) 【請求項２】 無機フィラーがアスペクト比１．２以下
の球状シリカである請求項１記載の流れ止め枠用液状樹
脂組成物。2. The liquid resin composition according to claim 1, wherein the inorganic filler is spherical silica having an aspect ratio of 1.2 or less. 【請求項３】 半導体搭載用プラスチック基板上に、請
求項１、又は２記載の液状樹脂組成物で流れ止め枠を形
成し、該流れ止め枠の内側に封止用液状樹脂を注入し、
流れ止め枠と封止用液状樹脂を同時に硬化してなること
を特徴とする半導体装置。3. A flow-stop frame is formed on the plastic substrate for mounting a semiconductor using the liquid resin composition according to claim 1 or 2, and a sealing liquid resin is injected inside the flow-stop frame.
A semiconductor device, wherein a flow stopper frame and a sealing liquid resin are simultaneously cured.
JP28492696A 1996-10-28 1996-10-28 Liquid resin composition for flow stop frame and semiconductor device using the same Expired - Fee Related JP3310557B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28492696A JP3310557B2 (en) 1996-10-28 1996-10-28 Liquid resin composition for flow stop frame and semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28492696A JP3310557B2 (en) 1996-10-28 1996-10-28 Liquid resin composition for flow stop frame and semiconductor device using the same

Publications (2)

Publication Number Publication Date
JPH10130470A JPH10130470A (en) 1998-05-19
JP3310557B2 true JP3310557B2 (en) 2002-08-05

Family

ID=17684855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28492696A Expired - Fee Related JP3310557B2 (en) 1996-10-28 1996-10-28 Liquid resin composition for flow stop frame and semiconductor device using the same

Country Status (1)

Country Link
JP (1) JP3310557B2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354554A (en) * 1998-06-09 1999-12-24 Tokin Corp Method of encapsulating ic chip and manufacture of ic card
JP2000260793A (en) * 1999-03-12 2000-09-22 Miyota Kk Packaging method for ic chip and its structure
JP3804464B2 (en) * 2001-03-27 2006-08-02 松下電工株式会社 Resin composition for forming semiconductor sealing frame and method for forming semiconductor sealing frame
JP4033257B2 (en) * 2002-04-08 2008-01-16 京セラケミカル株式会社 Liquid sealing resin composition and semiconductor sealing device
JP2007110062A (en) * 2005-09-15 2007-04-26 Hitachi Chem Co Ltd Die bonding resin paste, semiconductor device manufacturing method using the same, and semiconductor device
JP2007077333A (en) * 2005-09-15 2007-03-29 Hitachi Chem Co Ltd Manufacturing method of epoxy resin molding material for sealing, epoxy resin molding material for sealing and electronic part unit
JP2007227981A (en) * 2007-06-11 2007-09-06 Hitachi Chem Co Ltd Resin paste and flexible wiring board using the same
JP2008066735A (en) * 2007-09-10 2008-03-21 Hitachi Chem Co Ltd Method for forming protective film of flexible wiring board
JP4626709B2 (en) * 2009-02-05 2011-02-09 日立化成工業株式会社 Resin paste for protective film of flexible wiring board
US8828806B2 (en) 2009-06-01 2014-09-09 Shin-Etsu Chemical Co., Ltd. Dam composition for use with multilayer semiconductor package underfill material, and fabrication of multilayer semiconductor package using the same
JP5608211B2 (en) * 2012-12-10 2014-10-15 パナソニック株式会社 Semiconductor device
CN105308120B (en) * 2013-06-13 2017-10-10 东丽株式会社 The manufacture method of resin combination, resin sheet and its manufacture method and semiconductor device
JP6656792B2 (en) * 2014-03-28 2020-03-04 日立化成株式会社 Liquid resin composition for electronic component and electronic component device
JP2019123799A (en) * 2018-01-16 2019-07-25 日立化成株式会社 Resin composition for interlayer insulation layer, resin film for interlayer insulation layer, multilayer printed wiring board, semiconductor package and method for manufacturing multilayer printed wiring board
JP6806112B2 (en) * 2018-05-25 2021-01-06 昭和電工マテリアルズ株式会社 Semiconductor package and its manufacturing method
JP6825643B2 (en) * 2019-05-13 2021-02-03 昭和電工マテリアルズ株式会社 Liquid resin composition for electronic parts and electronic parts equipment

Also Published As

Publication number Publication date
JPH10130470A (en) 1998-05-19

Similar Documents

Publication Publication Date Title
JP3310557B2 (en) Liquid resin composition for flow stop frame and semiconductor device using the same
JP3469446B2 (en) Resin composition and method of manufacturing resin-encapsulated semiconductor device using the same
JP5031403B2 (en) Epoxy resin composition for sealing, resin-encapsulated semiconductor device and manufacturing method thereof
JP3189988B2 (en) Insulating resin paste
JP2008214382A (en) Epoxy resin composition for sealing semiconductor and semiconductor device
JP3240861B2 (en) Epoxy resin composition and semiconductor device
JP3214266B2 (en) Epoxy resin composition for semiconductor encapsulation and semiconductor device
JP2501804B2 (en) Epoxy resin composition
JP2001247654A (en) Liquid sealing resin composition and semiconductor device using the same
JP2000336244A (en) Liquid sealing resin composition and semiconductor device using the composition
JP4244259B2 (en) Amorphous silica powder and resin composition
JP3375835B2 (en) Liquid sealing resin composition and semiconductor product using the liquid sealing resin composition
JPH0366151A (en) Semiconductor device
JP2641349B2 (en) Insulating resin paste
JP3176502B2 (en) Semiconductor device and epoxy resin composition for semiconductor encapsulation used therein
JPH04223007A (en) Conductive resin paste for semiconductor
JP2787842B2 (en) Conductive resin paste for semiconductors
KR100413357B1 (en) Epoxy resin composition for encapsulating semiconductor device
JP2501258B2 (en) Insulating resin paste
JP2003238651A (en) Liquid resin composition, manufacturing method of semiconductor device and the semiconductor device
JP2002309067A (en) Epoxy resin composition for sealing and semiconductor device
JP3014900B2 (en) Semiconductor device
JPH03116952A (en) Semiconductor device
JP3537859B2 (en) Semiconductor device and epoxy resin composition used therein
JPH03115455A (en) Sealing resin composition and resin-sealed semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090524

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100524

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110524

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110524

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120524

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130524

Year of fee payment: 11

LAPS Cancellation because of no payment of annual fees