JP3262063B2 - High voltage test equipment and high voltage test method - Google Patents
High voltage test equipment and high voltage test methodInfo
- Publication number
- JP3262063B2 JP3262063B2 JP07458698A JP7458698A JP3262063B2 JP 3262063 B2 JP3262063 B2 JP 3262063B2 JP 07458698 A JP07458698 A JP 07458698A JP 7458698 A JP7458698 A JP 7458698A JP 3262063 B2 JP3262063 B2 JP 3262063B2
- Authority
- JP
- Japan
- Prior art keywords
- movable
- leads
- insulating shield
- fixed
- high voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Relating To Insulation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高電圧試験装置及
び高電圧試験方法に関する。特に本発明は、高耐圧ダイ
オード等の半導体装置の逆方向耐圧特性や逆方向ブロッ
キング特性等を測定評価する試験装置及び試験方法に関
する。The present invention relates to a high voltage test apparatus and a high voltage test method. In particular, the present invention relates to a test apparatus and a test method for measuring and evaluating a reverse breakdown voltage characteristic, a reverse blocking characteristic, and the like of a semiconductor device such as a high breakdown voltage diode.
【０００２】[0002]
【従来の技術】樹脂封止型高耐圧ダイオード装置が知ら
れている。図８は樹脂封止型高耐圧ダイオード装置の一
部断面化した構成図である。樹脂封止型高耐圧ダイオー
ド装置１は高耐圧ダイオード素子２、複数本のリード３
Ａ、３Ｂ及び樹脂封止体４を備える。高耐圧ダイオード
素子２のアノード領域にはリード３Ａのインナーリード
部となるヘッダ部が電気的に接続され、カソード領域に
はリード３Ｂのヘッダ部が電気的に接続される。複数本
のリード３Ａ、３Ｂはそれぞれ棒状のピンで形成されて
おり、樹脂封止体４を中心としてその外部の両側にアウ
ターリード部として引き出される。樹脂封止体４はトラ
ンスファーモールド法により成型されており、この樹脂
封止体４には例えばエポキシ系樹脂が使用される。2. Description of the Related Art A resin-sealed high voltage diode device is known. FIG. 8 is a partially sectional view of the configuration of a resin-sealed high voltage diode device. The resin-sealed high voltage diode device 1 includes a high voltage diode element 2 and a plurality of leads 3.
A, 3B and a resin sealing body 4 are provided. A header portion serving as an inner lead portion of the lead 3A is electrically connected to the anode region of the high breakdown voltage diode element 2, and a header portion of the lead 3B is electrically connected to the cathode region. Each of the plurality of leads 3A and 3B is formed of a rod-shaped pin, and is drawn out as outer lead portions on both sides outside the resin sealing body 4 with the center as the center. The resin sealing body 4 is molded by a transfer molding method, and for example, an epoxy resin is used for the resin sealing body 4.
【０００３】この種の樹脂封止型高耐圧ダイオード装置
１においては、高耐圧特性試験が実施され、製品として
の良否が判定される。高耐圧特性試験は高耐圧ダイオー
ド素子２の逆方向耐圧を測定する試験であり、リード３
Ａ、３Ｂ間に外部高耐圧試験装置から所定の逆方向電圧
が供給され、高耐圧ダイオード素子２の逆方向電流が測
定される。In this type of resin-encapsulated high-breakdown-voltage diode device 1, a high-breakdown-voltage characteristic test is performed to determine the quality of the product. The high withstand voltage characteristic test is a test for measuring the reverse withstand voltage of the high withstand voltage diode element 2.
A predetermined reverse voltage is supplied between A and 3B from an external high withstand voltage test device, and the reverse current of the high withstand voltage diode element 2 is measured.
【０００４】従来、外部高耐圧特性試験装置は絶縁性雰
囲気詳細には六フッ化硫黄（SF6）ガス雰囲気中で高耐
圧特性試験を行っている。SF6ガス雰囲気中で行われる
高耐圧特性試験においては、高耐圧ダイオード素子２の
リード３Ａ、３Ｂ間の樹脂封止体４表面に沿って発生す
る放電が防止でき、精度の高い高耐圧特性が測定できる
とともに、高耐圧ダイオード素子２の損傷が防止できる
特徴がある。さらに、SF6ガスは、熱的、化学的に安定
な無色無臭の気体であり、電気的絶縁用気体として極め
て優れている。Conventionally, an external high withstand voltage characteristic test apparatus performs a high withstand voltage characteristic test in an insulating atmosphere, specifically, a sulfur hexafluoride (SF 6 ) gas atmosphere. In the high withstand voltage characteristic test performed in an atmosphere of SF 6 gas, discharge generated along the surface of the resin sealing body 4 between the leads 3A and 3B of the high withstand voltage diode element 2 can be prevented, and a high withstand voltage characteristic with high accuracy is obtained. There is a feature that the measurement can be performed and the damage of the high breakdown voltage diode element 2 can be prevented. Further, SF 6 gas is a colorless and odorless gas that is thermally and chemically stable, and is extremely excellent as an electrically insulating gas.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来技
術に係る高耐圧特性試験装置並びに高耐圧特性試験方法
においては、以下の点について配慮がなされていない。However, the following points are not taken into consideration in the high breakdown voltage characteristic test apparatus and the high breakdown voltage characteristic test method according to the prior art.
【０００６】第１に、高耐圧特性試験装置においては、
大気中における放電の防止、大気中の絶縁破壊の防止、
被測定対象物の界面（表面）における絶縁破壊の防止、
界面におけるリーク電流の防止等のため、SF6ガスは必
須となっている。しかし、SF6ガス雰囲気を生成するた
めに少なくともSF6ガス供給系が必要になる。このた
め、高耐圧特性試験装置の構造が複雑になり、かつ大型
になる。First, in a high withstand voltage characteristic test apparatus,
Prevention of discharge in the atmosphere, prevention of dielectric breakdown in the atmosphere,
Prevention of dielectric breakdown at the interface (surface) of the object to be measured,
SF 6 gas is indispensable to prevent leakage current at the interface. However, at least an SF 6 gas supply system is required to generate the SF 6 gas atmosphere. For this reason, the structure of the high withstand voltage characteristic test device becomes complicated and large.
【０００７】第２に、従来の高耐圧特性試験方法におい
て不可欠なSF6ガスは、地球温暖化現象を誘発し、また
オゾン層の破壊を誘発するおそれがあるガスである。環
境問題や人類の将来を考えれば、このようなSF6ガスの
使用は使用を避け、また制限すべきである。Second, SF 6 gas, which is indispensable in the conventional high withstand voltage test method, is a gas that induces a global warming phenomenon and may cause destruction of the ozone layer. Given the future environmental problems and human use of such SF 6 gas avoids the use, and should be limited.
【０００８】本発明は上記課題を解決するためになされ
たものである。従って、本発明の目的は、構造を簡易化
しつつ小型化が実現できる、高電圧試験装置を提供する
ことである。The present invention has been made to solve the above problems. Accordingly, an object of the present invention is to provide a high-voltage test apparatus capable of realizing miniaturization while simplifying the structure.
【０００９】本発明の他の目的は、高耐圧半導体装置の
逆方向耐圧特性や逆方向ブロッキング特性等の特性を測
定評価する高電圧試験装置を提供することである。Another object of the present invention is to provide a high voltage test apparatus for measuring and evaluating characteristics such as a reverse breakdown voltage characteristic and a reverse blocking characteristic of a high breakdown voltage semiconductor device.
【００１０】本発明のさらに他の目的は、絶縁性雰囲気
ガス、具体的にはSF6ガスを使用せずに、簡単な操作
で、且つランニングコストも低い高電圧試験方法を提供
することである。Still another object of the present invention is to provide a high-voltage test method which is simple in operation and low in running cost without using an insulating atmosphere gas, specifically SF 6 gas. .
【００１１】本発明のさらに他の目的は、SF6ガスを使
用せずに地球温暖化の防止やオゾン層の破壊の防止に好
適な高電圧試験方法を提供することである。Yet another object of the present invention is to provide a suitable high-voltage testing method to prevent destruction of the prevention and ozone layer global warming without using SF 6 gas.
【００１２】本発明のさらに他の目的は、高耐圧半導体
装置の逆方向耐圧特性や逆方向ブロッキング特性等の特
性を測定評価する高電圧試験方法を提供することであ
る。Still another object of the present invention is to provide a high voltage test method for measuring and evaluating characteristics such as a reverse breakdown voltage characteristic and a reverse blocking characteristic of a high breakdown voltage semiconductor device.
【００１３】[0013]
【課題を解決するための手段】上記課題を解決するため
に、本発明の第１の特徴は、被測定対象物の第１及び第
２のリード間の封止体表面に当接する絶縁遮蔽体と、こ
れらの第１及び第２のリード間に高電圧を印加する高電
圧供給部と、第１及び第２のリード間の電気的特性を測
定する特性測定部とを少なくとも有する高電圧試験装置
であることである。第１及び第２のリードは、封止体外
部に引き出され、絶縁遮蔽体は、被測定対象物の封止体
表面に当接し、第１及び第２のリード間の放電経路を遮
断する。In order to solve the above-mentioned problems, a first feature of the present invention is to provide an insulating shield contacting a surface of a sealing body between first and second leads of an object to be measured. And a high voltage supply unit for applying a high voltage between the first and second leads, and a characteristic measuring unit for measuring an electric characteristic between the first and second leads. It is to be. The first and second leads are drawn out of the sealing body, and the insulating shield comes into contact with the surface of the sealing body of the object to be measured and cuts off a discharge path between the first and second leads.
【００１４】本発明の第１の特徴に係る高電圧試験装置
は、高耐圧ダイオード等の高耐圧半導体装置の逆方向耐
圧特性や逆方向ブロッキング特性等の特性を測定する特
性試験装置であることが好ましい。例えば、被測定対象
物となる高耐圧ダイオード素子は、アノード領域に接続
された第１のリードとカソード領域に接続された第２の
リードとを有し、この第１及び第２のリードは封止体外
部に引き出される。第１及び第２のリード間には高耐圧
ダイオード素子の逆方向耐圧特性試験等を行う高電圧が
試験信号として供給される。The high-voltage test apparatus according to the first aspect of the present invention is a characteristic test apparatus for measuring characteristics such as a reverse breakdown voltage characteristic and a reverse blocking characteristic of a high breakdown voltage semiconductor device such as a high breakdown voltage diode. preferable. For example, a high breakdown voltage diode element to be measured has a first lead connected to the anode region and a second lead connected to the cathode region, and the first and second leads are sealed. It is pulled out of the stop. A high voltage for performing a reverse breakdown voltage characteristic test or the like of the high breakdown voltage diode element is supplied as a test signal between the first and second leads.
【００１５】絶縁遮蔽体は第１及び第２のリード間の封
止体表面を放電により伝わる逆方向電流等を遮断する。
絶縁遮蔽体は封止体との密着性が良好な材料で形成され
ることが好ましく、例えば絶縁性ゴム又は弾力性を有す
る絶縁性樹脂ラバーで形成することが実用的である。The insulating shield blocks a reverse current or the like transmitted by discharge on the surface of the sealing member between the first and second leads.
The insulating shield is preferably formed of a material having good adhesion to the sealing body. For example, it is practical to use insulating rubber or elastic resin rubber having elasticity.
【００１６】さらに、絶縁遮蔽体と封止体との間の密着
性を高めるために、絶縁遮蔽体には真空吸着機能を備え
ることが好ましい。さらに、封止体表面の放電経路自体
の発生を阻止するために、封止体表面にドライエアーを
吹き付ける機能を備えることが好ましい。Further, in order to enhance the adhesion between the insulating shield and the sealing body, the insulating shield preferably has a vacuum suction function. Further, it is preferable to have a function of blowing dry air to the surface of the sealing body in order to prevent the generation of the discharge path itself on the surface of the sealing body.
【００１７】このように構成される高電圧試験装置にお
いては、絶縁遮蔽体により半導体装置等の被測定対象物
の第１及び第２のリード間の放電経路が完全に遮断され
た状態で電気的特性の測定が行える。In the high-voltage test apparatus configured as described above, the electrical insulation is performed in a state where the discharge path between the first and second leads of the object to be measured such as a semiconductor device is completely cut off by the insulating shield. Characteristics can be measured.
【００１８】このため、絶縁性雰囲気、具体的にはSF6
ガス雰囲気を生成する必要がなくなるので、この絶縁性
雰囲気を生成するためのガス供給系がなくなり、高電圧
試験装置の構成が簡易になる。さらに、絶縁性雰囲気を
生成するためのガス供給系の廃止に伴い、高電圧試験装
置が小型化できる。For this reason, an insulating atmosphere, specifically, SF 6
Since there is no need to generate a gas atmosphere, there is no gas supply system for generating the insulating atmosphere, and the configuration of the high-voltage test apparatus is simplified. Further, with the elimination of the gas supply system for generating the insulating atmosphere, the high-voltage test apparatus can be downsized.
【００１９】なお、被測定対象物には、第１及び第２の
リード以外の第３，第４、・・・・・・のリードがあってもか
まわない。それらの複数のリードの内から高電圧を印加
しようとする２つのリードを選び、その選ばれたリード
間の封止体表面に絶縁遮蔽体を当接すればよい。The object to be measured may have third, fourth,... Leads other than the first and second leads. From among the plurality of leads, two leads to which a high voltage is to be applied may be selected, and the insulating shield may be brought into contact with the surface of the sealing body between the selected leads.
【００２０】本発明の第２の特徴は、（イ）被測定対象
物の第１及び第２のリード間の封止体表面に絶縁遮蔽体
を当接するステップと、（ロ）この第１及び第２のリー
ド間に高電圧を印加するステップと、（ハ）第１及び第
２のリード間の電気的特性を測定するステップとを少な
くとも有する高電圧試験方法であることである。即ち、
本発明の第２の特徴は、高電圧試験方法に係わり、半導
体装置等の被測定対象物の封止体外部に引き出された複
数のリード間の封止体表面にリード間の放電経路を遮断
する絶縁遮蔽体を当接した状態で、複数のリード間に高
電圧を供給し、封止体内部の被測定対象物の電気的特性
を測定する。現実の測定においては、上記の高電圧を印
加するステップと電気的特性を測定するステップとが同
時であってもかまわないことは勿論である。A second feature of the present invention is that (a) a step of abutting an insulating shield on the surface of the sealing body between the first and second leads of the object to be measured, and (b) the first and second steps. The high voltage test method includes at least a step of applying a high voltage between the second leads and (c) a step of measuring an electrical characteristic between the first and second leads. That is,
A second feature of the present invention relates to a high-voltage test method, wherein a discharge path between leads is cut off on a surface of a sealed body between a plurality of leads drawn out of a sealed body of an object to be measured such as a semiconductor device. A high voltage is supplied between the plurality of leads in a state in which the insulating shield to be brought into contact is measured, and the electrical characteristics of the object to be measured inside the sealing body are measured. In actual measurement, it goes without saying that the step of applying the high voltage and the step of measuring the electrical characteristics may be performed simultaneously.
【００２１】本発明の第２の特徴に係る高電圧試験方法
においては、放電経路を絶縁遮蔽体により物理的に遮断
した状態で、半導体装置等の被測定対象物の電気的特性
試験が実施できる。すなわち、従来、電気的特性試験に
おいて必要とされていた絶縁性雰囲気、詳細にはSF6ガ
ス雰囲気の使用が廃止できる。従って、地球温暖化が防
止でき、またオゾン層の破壊が防止できる。In the high voltage test method according to the second aspect of the present invention, an electrical characteristic test of an object to be measured such as a semiconductor device can be performed in a state where the discharge path is physically blocked by an insulating shield. . That is, the use of the insulating atmosphere, specifically, the SF 6 gas atmosphere, which has been conventionally required in the electrical characteristic test, can be abolished. Therefore, global warming can be prevented and destruction of the ozone layer can be prevented.
【００２２】特に、本発明の第２の特徴によれば、高耐
圧半導体装置の逆方向耐圧特性や逆方向ブロッキング特
性等の特性を簡単、且つ低コストで測定評価できる。In particular, according to the second feature of the present invention, characteristics such as a reverse breakdown voltage characteristic and a reverse blocking characteristic of a high breakdown voltage semiconductor device can be measured and evaluated easily and at low cost.
【００２３】[0023]
【発明の実施の形態】以下図面を参照して、本発明の実
施の形態を説明する。以下の図面の記載において、同一
又は類似の部分には同一又は類似の符号を付している。
ただし、図面は模式的なものであることに留意すべきで
ある。Embodiments of the present invention will be described below with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals.
However, it should be noted that the drawings are schematic.
【００２４】（第１の実施の形態）図１は本発明の第１
の実施の形態に係る高電圧試験装置のシステム構成を示
す概略正面図、図２は高電圧試験装置の概略側面図であ
る。図１及び図２に示すように、本発明の第１の実施の
形態に係る高電圧試験装置１０は、前述の図８に示す高
耐圧ダイオード装置（半導体装置）１を被測定対象物と
して高耐圧特性試験を行う。高電圧試験装置１０は、半
導体装置搬送部１１、搬送駆動部１２、高電圧供給部１
３、特性測定部１４、特性判定部１５、絶縁遮蔽体２０
及び遮蔽体駆動部２１を備え、構築される。(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 2 is a schematic front view showing the system configuration of the high voltage test apparatus according to the embodiment, and FIG. 2 is a schematic side view of the high voltage test apparatus. As shown in FIGS. 1 and 2, the high-voltage test apparatus 10 according to the first embodiment of the present invention uses the high-voltage diode device (semiconductor device) 1 shown in FIG. Perform withstand voltage characteristic test. The high-voltage test apparatus 10 includes a semiconductor device transport section 11, a transport drive section 12, a high-voltage supply section 1
3. Characteristic measuring unit 14, characteristic determining unit 15, insulating shield 20
And a shield driving unit 21.
【００２５】高電圧試験装置１０の半導体装置搬送部１
１は、前述の図８に示す高耐圧ダイオード装置１の第１
のリード３Ａを収納し支持する溝１１Ｃが複数個規則的
に配設された搬送レール１１Ａと、第２のリード３Ｂを
収納し支持する溝１１Ｄが複数個規則的に配設された搬
送レール１１Ｂとを備える。搬送レール１１Ａ、１１Ｂ
は、図１に示すようにほぼ平行に配設され、図２に示す
ように図中横方向に帯状に伸びる。高耐圧ダイオード装
置１は、搬送レール１１Ａの溝１１Ｃに第１のリード３
Ａを支持しかつ搬送レール１１Ｂの溝１５Ｄに第２のリ
ード３Ｂを支持した両端支持状態において、図２中、矢
印Ａに示す長手方向に間欠的に搬送される。この搬送は
搬送駆動部１２により行われる。The semiconductor device transport section 1 of the high voltage test apparatus 10
1 is the first of the high breakdown voltage diode device 1 shown in FIG.
A transport rail 11A in which a plurality of grooves 11C for accommodating and supporting the lead 3A are regularly arranged, and a transport rail 11B in which a plurality of grooves 11D for accommodating and supporting the second lead 3B are regularly arranged. And Transport rails 11A, 11B
Are arranged substantially in parallel as shown in FIG. 1, and extend in the lateral direction in the figure as a band as shown in FIG. The high withstand voltage diode device 1 includes a first lead 3 in a groove 11C of a transport rail 11A.
A is intermittently conveyed in the longitudinal direction indicated by an arrow A in FIG. 2 in a state where both ends are supported while supporting the second lead 3B in the groove 15D of the conveyance rail 11B. This transport is performed by the transport drive unit 12.
【００２６】絶縁遮蔽体２０は半導体装置搬送部１１の
搬送経路途中の耐圧特性試験位置近傍に配設される。図
３は絶縁遮蔽体２０の斜視図である。図２及び図３に示
すように、絶縁遮蔽体２０は固定側絶縁遮蔽体２０Ａ及
び可動側絶縁遮蔽体２０Ｂを備える。固定側絶縁遮蔽体
２０Ａは、搬送経路よりも上側の位置（耐圧特性試験位
置に相当する）に配設され、装置筺体に固定状態で取り
付けられる。可動側絶縁遮蔽体２０Ｂは、搬送経路の若
干下側の位置と、搬送経路よりも上側の位置で固定側絶
縁遮蔽体２０Ａと合致する位置との間の範囲において、
図１中、矢印Ｂ方向に上昇下降する。すなわち、可動側
絶縁遮蔽体２０Ｂは、搬送経路において被測定対象物と
なる高耐圧ダイオード装置１の樹脂封止体４底表面に当
接し、そのまま上昇することにより固定側絶縁遮蔽体２
０Ａとの間で高耐圧ダイオード装置１の樹脂封止体４を
挟持できる。また、逆に可動側絶縁遮蔽体２０Ｂは下降
することにより固定側絶縁遮蔽体２０Ａとの間で挟持し
た高耐圧ダイオード装置１を搬送経路に戻すことができ
る。可動側絶縁遮蔽体２０Ｂの上昇下降は遮蔽体駆動部
２１により行われる。遮蔽体駆動部２１には機構が単純
な空気圧シリンダ、油圧シリンダのいずれかが実用的に
使用できる。なお、本発明においては、電磁ソレノイド
で遮蔽体駆動部２１を構築してもよいし、又電気モータ
と機械的メカニズムの上昇下降機構とを組み合わせて遮
蔽体駆動部２１を構築してもよい。The insulating shield 20 is disposed in the vicinity of the withstand voltage characteristic test position in the middle of the transfer path of the semiconductor device transfer section 11. FIG. 3 is a perspective view of the insulating shield 20. As shown in FIGS. 2 and 3, the insulating shield 20 includes a fixed-side insulating shield 20A and a movable-side insulating shield 20B. The fixed-side insulating shield 20A is disposed at a position above the transport path (corresponding to a pressure-resistance characteristic test position), and is fixedly attached to the apparatus housing. The movable-side insulating shield 20B is located between a position slightly below the transport path and a position that matches the fixed-side insulating shield 20A at a position above the transport path,
1, it rises and falls in the direction of arrow B. That is, the movable-side insulating shield 20B abuts on the bottom surface of the resin sealing body 4 of the high-withstand-voltage diode device 1 to be measured in the transport path, and rises as it is, thereby fixing the fixed-side insulating shield 2
The resin sealing body 4 of the high-breakdown-voltage diode device 1 can be sandwiched between 0 A. Conversely, by moving down the movable-side insulating shield 20B, the high breakdown voltage diode device 1 sandwiched between the movable-side insulating shield 20B and the fixed-side insulating shield 20A can be returned to the transport path. The movable side insulating shield 20 </ b> B is raised and lowered by the shield driving unit 21. Either a pneumatic cylinder or a hydraulic cylinder having a simple mechanism can be practically used for the shield driving unit 21. In the present invention, the shield drive unit 21 may be constructed by an electromagnetic solenoid, or the shield drive unit 21 may be constructed by combining an electric motor and a mechanism for raising and lowering a mechanical mechanism.
【００２７】被測定対象物となる高耐圧ダイオード装置
１の樹脂封止体４は、本発明の第１の実施の形態におい
ては、円柱形状で形成されている。そして、図３に示す
ように、固定側絶縁遮蔽体２０Ａ、可動側絶縁遮蔽体２
０Ｂは高耐圧ダイオード装置１の樹脂封止体４に当接す
る部分に半円形状の当接部２０Ｃ、２０Ｄのそれぞれが
配設された板状部材で形成される。固定側絶縁遮蔽体２
０Ａの当接部２０Ｃは、高耐圧ダイオード装置１の第１
のリード３Ａと第２のリード３Ｂとの間であって樹脂封
止体４の上側表面に当接し密着する。同様に、可動側絶
縁遮蔽体２０Ｂの当接部２０Ｄは、高耐圧ダイオード装
置１の第１のリード３Ａと第２のリード３Ｂリードとの
間であって樹脂封止体４の下側表面に当接し密着する。
固定側絶縁遮蔽体２０Ａの当接部２０Ｃ及び可動側絶縁
遮蔽体２０Ｂの当接部２０Ｄの双方により、高耐圧ダイ
オード装置１の樹脂封止体４の円周表面の全域は絶縁遮
蔽体２０で覆われ、リード３Ａと３Ｂとの間であって樹
脂封止体４の表面に発生する放電経路はほぼ完全に遮断
される。In the first embodiment of the present invention, the resin sealing body 4 of the high breakdown voltage diode device 1 to be measured is formed in a cylindrical shape. Then, as shown in FIG. 3, the fixed-side insulating shield 20A, the movable-side insulating shield 2
Reference numeral 0B is a plate-shaped member in which semi-circular contact portions 20C and 20D are provided at portions that contact the resin sealing body 4 of the high voltage diode device 1. Fixed side insulation shield 2
The contact portion 20C of the high-voltage diode device 1
Between the lead 3A and the second lead 3B and the upper surface of the resin sealing body 4 to be in close contact therewith. Similarly, the contact portion 20 </ b> D of the movable-side insulating shield 20 </ b> B is located between the first lead 3 </ b> A and the second lead 3 </ b> B of the high-voltage diode device 1 and on the lower surface of the resin sealing body 4. Contact and adhere.
Both the contact portion 20C of the fixed-side insulating shield 20A and the contact portion 20D of the movable-side insulating shield 20B allow the insulating shield 20 to cover the entire circumferential surface of the resin sealing body 4 of the high voltage diode device 1. The discharge path generated between the leads 3A and 3B and generated on the surface of the resin sealing body 4 is almost completely shut off.
【００２８】固定側絶縁遮蔽体２０Ａ、可動側絶縁遮蔽
体２０Ｂはいずれも絶縁性材料、具体的には少なくとも
当接部２０Ｃ、２０Ｄのそれぞれを絶縁性ゴム又は絶縁
性樹脂ラバーで形成することが好ましい。この種の絶縁
性材料は弾力性を有し、高耐圧ダイオード装置１の樹脂
封止体４表面の密着度が非常に高く、放電経路の遮断機
能がより一層向上できる。さらに、この種の弾力性を有
する絶縁性材料が使用される場合、高耐圧ダイオード装
置１の樹脂封止体４の半径よりも固定側絶縁遮蔽体２０
Ａの当接部２０Ｃ、可動側絶縁遮蔽体２０Ｂの当接部２
０Ｄの半径は若干小さく設定されることにより、密着度
がより一層向上できる。Both the fixed-side insulating shield 20A and the movable-side insulating shield 20B may be formed of an insulating material, specifically, at least each of the contact portions 20C and 20D is formed of insulating rubber or insulating resin rubber. preferable. This kind of insulating material has elasticity, the degree of adhesion on the surface of the resin sealing body 4 of the high breakdown voltage diode device 1 is very high, and the function of blocking the discharge path can be further improved. Furthermore, when an insulating material having this kind of elasticity is used, the fixed-side insulating shield 20 is larger than the radius of the resin sealing body 4 of the high voltage diode device 1.
A contact part 20C of A, contact part 2 of movable side insulating shield 20B
By setting the radius of 0D to be slightly smaller, the degree of adhesion can be further improved.
【００２９】高電圧供給部１３は高耐圧ダイオード装置
１の第１のリード３Ａ、第２のリード３Ｂのそれぞれに
逆方向高電圧を供給する。高電圧供給部１３からの逆方
向高電圧は、高電圧供給部１３に接続された電圧印加端
子１３Ａを通して高耐圧ダイオード装置１の第１のリー
ド３Ａに、電圧印加端子１３Ｂを通して第２のリード１
３Ｂにそれぞれ供給される。電圧印加端子１３Ａ、１３
Ｂは、固定側絶縁遮蔽体２０Ａの両側に配設され、固定
側絶縁遮蔽体２０Ａの当接部２０Ｃと可動側絶縁遮蔽体
２０Ｂの当接部２０Ｄとで高耐圧ダイオード素子２の樹
脂封止体４を挟持したときに第１のリード３Ａ、第２の
リード３Ｂのそれぞれに当接し電気的に接続される。The high voltage supply unit 13 supplies a reverse high voltage to each of the first lead 3A and the second lead 3B of the high breakdown voltage diode device 1. The reverse high voltage from the high voltage supply unit 13 is applied to the first lead 3A of the high voltage diode device 1 through the voltage application terminal 13A connected to the high voltage supply unit 13 and to the second lead 1A through the voltage application terminal 13B.
3B. Voltage application terminals 13A, 13
B is disposed on both sides of the fixed-side insulating shield 20A, and the contact portion 20C of the fixed-side insulating shield 20A and the contact portion 20D of the movable-side insulating shield 20B are resin-sealed for the high voltage diode element 2. When the body 4 is sandwiched, the first lead 3A and the second lead 3B are in contact with and electrically connected to each other.
【００３０】特性測定部１４は高電圧供給部１３により
高耐圧ダイオード装置１に試験信号（逆方向高電圧）を
供給した結果得られる逆方向電流を測定する。特性測定
部１４は電圧印加端子１３Ａ、１３Ｂのそれぞれに接続
される。The characteristic measuring section 14 measures a reverse current obtained as a result of supplying a test signal (reverse high voltage) to the high voltage diode device 1 by the high voltage supply section 13. The characteristic measuring section 14 is connected to each of the voltage application terminals 13A and 13B.
【００３１】特性判定部１５は特性測定部１４により得
られた逆方向電流の測定結果に基づき高耐圧ダイオード
素子２の電気的特性の良否を判定する。特性判定部１５
には予め基礎研究によって得られた最適な逆方向電流値
が記憶部に記憶されている。さらに、特性判定部１５
は、特性測定部１４により測定された逆方向電流値が記
憶部に記憶された逆方向電流値の範囲内か否かを検討
し、範囲内であれば良品とする、範囲外であれば不良品
とする判定を行う。The characteristic determining section 15 determines whether or not the electrical characteristics of the high voltage diode element 2 are good based on the measurement result of the reverse current obtained by the characteristic measuring section 14. Characteristic determination unit 15
, The optimal reverse current value obtained by the basic research is stored in the storage unit in advance. Further, the characteristic determination unit 15
Is to determine whether the reverse current value measured by the characteristic measuring unit 14 is within the range of the reverse current value stored in the storage unit, and if the value is within the range, it is determined to be good. A good product is determined.
【００３２】次に、このように構成される高電圧試験装
置１０を使用した高電圧試験方法について説明する。高
電圧試験を行う高耐圧ダイオード装置１は、前述の図８
に示すように、複数枚のダイオードチップを積層した高
耐圧ダイオード素子２を備える。高耐圧ダイオード素子
２は円柱形状を有する樹脂封止体４で気密封止される。
樹脂封止体４の外部には実質的に同軸上で互いに反対方
向に第１のリード３Ａと第２のリード３Ｂが引き出され
る。第１のリード３Ａのインナーリード部分であるヘッ
ダ部には高耐圧ダイオード素子２のアノード領域（又は
カソード領域）が電気的に接続される。第２のリード３
Ｂのインナーリード部分であるヘッダ部にはカソード領
域（又はアノード領域）が電気的に接続される。Next, a high-voltage test method using the high-voltage test apparatus 10 configured as described above will be described. FIG.
As shown in FIG. 1, a high-voltage diode element 2 in which a plurality of diode chips are stacked is provided. The high breakdown voltage diode element 2 is hermetically sealed with a resin sealing body 4 having a cylindrical shape.
A first lead 3A and a second lead 3B are drawn out of the resin sealing body 4 substantially coaxially in opposite directions. An anode region (or a cathode region) of the high breakdown voltage diode element 2 is electrically connected to a header portion which is an inner lead portion of the first lead 3A. 2nd lead 3
A cathode region (or an anode region) is electrically connected to a header portion which is an inner lead portion of B.
【００３３】（１）まず、図１及び図２に示す高電圧試
験装置１０の半導体装置搬送部１１のロード側（図２
中、左側）に被測定対象物となる高耐圧ダイオード装置
１を供給する。半導体装置搬送部１１のロード側には複
数の高耐圧ダイオード装置１が連続的に供給される。半
導体装置搬送部１１においては、搬送レール１１Ａの溝
１１Ｃに高耐圧ダイオード装置１の第１のリード３Ａが
収納され支持されるとともに、搬送レール１１Ｂの溝１
１Ｄに第２のリード３Ｂが収納され支持される。つま
り、高耐圧ダイオード装置１は、両端支持状態で支持さ
れ、矢印Ａ方向に向かって（図２中、左側から右側に向
かって）搬送経路内を搬送される。搬送レール１１Ａの
溝１１Ｃ、搬送レール１１Ｂの溝１１Ｄはいずれも矢印
Ａ方向に等間隔で配設される。１個の高耐圧ダイオード
装置１の高電圧試験中においては半導体装置搬送部１１
による高耐圧ダイオード装置１の搬送が一時的に停止
し、高耐圧ダイオード装置１は搬送と停止とを交互に繰
り返す間欠的な搬送により搬送される。半導体装置搬送
部１１の搬送制御は搬送駆動部１２により行われる。(1) First, the load side (FIG. 2) of the semiconductor device transport section 11 of the high voltage test apparatus 10 shown in FIGS.
(Medium, left side) is supplied with the high breakdown voltage diode device 1 to be measured. A plurality of high breakdown voltage diode devices 1 are continuously supplied to the load side of the semiconductor device transport unit 11. In the semiconductor device transport section 11, the first lead 3A of the high voltage diode device 1 is housed and supported in the groove 11C of the transport rail 11A, and the groove 1C of the transport rail 11B is supported.
The second lead 3B is housed and supported in 1D. That is, the high breakdown voltage diode device 1 is supported in a state where both ends are supported, and is transported in the transport path in the direction of arrow A (from left to right in FIG. 2). The groove 11C of the transfer rail 11A and the groove 11D of the transfer rail 11B are both arranged at equal intervals in the direction of arrow A. During the high voltage test of one high voltage diode device 1, the semiconductor device transport unit 11
Is temporarily stopped, and the high-voltage diode device 1 is transported by intermittent transport that alternately repeats transport and stop. The transfer control of the semiconductor device transfer unit 11 is performed by the transfer drive unit 12.
【００３４】（２）搬送経路途中の高電圧試験位置直下
に高耐圧ダイオード装置１が搬送されると、半導体装置
搬送部１１による高耐圧ダイオード装置１の搬送が一時
的に停止する。この搬送停止に同期し、搬送経路下に待
機していた可動側絶縁遮蔽体２０Ｂが上昇を開始する。
可動側絶縁遮蔽体２０Ｂの矢印Ｂ方向の上昇（及び下
降）制御は遮蔽体駆動部２１により行われる。可動側絶
縁遮蔽体２０Ｂの上昇により、可動側絶縁遮蔽体２０Ｂ
の当接部２０Ｄ（図３参照）は、高耐圧ダイオード装置
１の樹脂封止体４下側表面に接触し、そのまま高耐圧ダ
イオード装置１を押し上げる。(2) When the high-withstand-voltage diode device 1 is transported immediately below the high-voltage test position in the middle of the transport route, the transport of the high-withstand-voltage diode device 1 by the semiconductor device transport section 11 is temporarily stopped. In synchronization with the stoppage of the transfer, the movable-side insulating shield 20B waiting under the transfer path starts to rise.
The upward (and downward) control of the movable-side insulating shield 20B in the direction of arrow B is performed by the shield driver 21. As the movable-side insulating shield 20B rises, the movable-side insulating shield 20B
(See FIG. 3) contacts the lower surface of the resin sealing body 4 of the high voltage diode device 1 and pushes up the high voltage diode device 1 as it is.
【００３５】（３）図４及び図５に示すように、高耐圧
ダイオード装置１の樹脂封止体４上側表面が固定側絶縁
遮蔽体２０Ａの当接部２０Ｃに接触し押し付けられるま
で、可動側絶縁遮蔽体２０Ｂの上昇が行われる。可動側
絶縁遮蔽体２０Ｂの上昇が完了すると、高耐圧ダイオー
ド装置１の樹脂封止体４の円周全域が固定側絶縁遮蔽体
２０Ａ及び可動側絶縁遮蔽体２０Ｂで覆われ、かつ樹脂
封止体４と当接部２０Ｃ、２０Ｄのそれぞれとの間は適
度な押付け力で密着する。従って、高耐圧ダイオード装
置１の第１のリード３Ａと第２のリード３Ｂとの間にお
いて、樹脂封止体４の表面上の放電経路は完全に遮断さ
れる。(3) As shown in FIGS. 4 and 5, the upper surface of the resin sealing body 4 of the high breakdown voltage diode device 1 is brought into contact with the contact portion 20C of the fixed insulating shield 20A and pressed on the movable side. The insulation shield 20B is raised. When the raising of the movable-side insulating shield 20B is completed, the entire circumference of the resin sealing body 4 of the high-voltage diode device 1 is covered with the fixed-side insulating shielding body 20A and the movable-side insulating shielding body 20B, and the resin sealing body is formed. 4 and the contact portions 20C and 20D are in close contact with an appropriate pressing force. Therefore, between the first lead 3A and the second lead 3B of the high breakdown voltage diode device 1, the discharge path on the surface of the resin sealing body 4 is completely shut off.
【００３６】さらに、可動側絶縁遮蔽体２０Ｂの上昇が
完了した時点、すなわち放電経路が遮断された時点で、
高耐圧ダイオード装置１は耐圧特性試験位置にセットさ
れ、第１のリード３Ａは電圧印加端子１３Ａに当接し電
気的に接続されるとともに、第２のリード３Ｂは電圧印
加端子１３Ｂに当接し電気的に接続される。Further, when the movable insulating shield 20B is completely lifted, ie, when the discharge path is cut off,
The high withstand voltage diode device 1 is set at a withstand voltage characteristic test position, and the first lead 3A is in contact with and electrically connected to the voltage application terminal 13A, and the second lead 3B is in contact with and electrically connected to the voltage application terminal 13B. Connected to.
【００３７】（４）高耐圧ダイオード装置１の高耐圧特
性試験が行われる。高電圧供給部１３から電圧印加端子
１３Ａ、１３Ｂのそれぞれに逆方向高電圧が供給され、
この逆方向高電圧は高耐圧ダイオード装置１に供給され
る。即ち、高耐圧ダイオード素子２のカソード領域側が
アノード領域側よりも高い電位となる逆方向高電圧が試
験信号として使用される。この逆方向高電圧が高耐圧ダ
イオード装置１に供給された結果、高耐圧ダイオード素
子２には逆方向電流が流れる。(4) A high breakdown voltage characteristic test of the high breakdown voltage diode device 1 is performed. A reverse high voltage is supplied from the high voltage supply unit 13 to each of the voltage application terminals 13A and 13B,
This reverse high voltage is supplied to the high breakdown voltage diode device 1. That is, a reverse high voltage in which the cathode region side of the high breakdown voltage diode element 2 has a higher potential than the anode region side is used as a test signal. When the reverse high voltage is supplied to the high breakdown voltage diode device 1, a reverse current flows through the high breakdown voltage diode element 2.
【００３８】（５）この逆方向電流は特性測定部１４に
おいて測定され、この特性測定部１４の測定結果に基づ
き特性判定部１５において最適な高耐圧特性であるか否
かが判定される。(5) The reverse current is measured by the characteristic measuring section 14, and based on the measurement result of the characteristic measuring section 14, the characteristic judging section 15 judges whether or not the high withstand voltage characteristic is optimal.
【００３９】（６）高耐圧特性試験が終了すると、可動
側絶縁遮蔽体２０Ｂが下降し高耐圧ダイオード装置１が
再び搬送経路に戻される。この搬送経路に戻された高耐
圧ダイオード装置１は半導体装置搬送部１１のアンロー
ド側に搬送される。この高耐圧ダイオード装置１の搬送
中、又は搬送後に、高耐圧特性試験で不良品と判定され
た高耐圧ダイオード装置１は取り除かれる。(6) When the high withstand voltage characteristic test is completed, the movable insulating shield 20B is lowered, and the high withstand voltage diode device 1 is returned to the transport path again. The high breakdown voltage diode device 1 returned to this transport path is transported to the unload side of the semiconductor device transport unit 11. During or after the transportation of the high breakdown voltage diode device 1, the high breakdown voltage diode device 1 determined to be defective in the high breakdown voltage characteristic test is removed.
【００４０】このように構成される高電圧試験装置１０
においては、絶縁遮蔽体２０により高耐圧ダイオード装
置１の第１及び第２のリード３Ａ、３Ｂ間の放電経路が
完全に遮断された状態で高耐圧特性の測定が行える。す
なわち、絶縁性雰囲気、具体的にはSF6ガス雰囲気を生
成する必要がなくなるので、この絶縁性雰囲気を生成す
るためのガス供給系がなくなり、高電圧試験装置１０の
構成が簡易になる。さらに、絶縁性雰囲気を生成するた
めのガス供給系の廃止に伴い、高電圧試験装置１０が小
型化できる。The high voltage test apparatus 10 configured as described above
In the above, the high withstand voltage characteristic can be measured in a state where the discharge path between the first and second leads 3A and 3B of the high withstand voltage diode device 1 is completely cut off by the insulating shield 20. That is, since it is not necessary to generate an insulating atmosphere, specifically, an SF 6 gas atmosphere, there is no gas supply system for generating the insulating atmosphere, and the configuration of the high voltage test apparatus 10 is simplified. Further, with the elimination of the gas supply system for generating the insulating atmosphere, the high-voltage test apparatus 10 can be downsized.
【００４１】さらに、本発明の第１の実施の形態に係る
高電圧試験方法においては、放電経路を絶縁遮蔽体２０
により物理的に遮断した状態で、高耐圧ダイオード装置
１の高耐圧特性試験が実施できる。すなわち、従来、高
耐圧特性試験において必要とされていた絶縁性雰囲気、
詳細にはSF6ガス雰囲気の使用が廃止できる。従って、
地球温暖化が防止でき、またオゾン層の破壊が防止でき
る。Further, in the high voltage test method according to the first embodiment of the present invention, the discharge path is connected to the insulating shield 20.
Thus, a high-breakdown-voltage characteristic test of the high-breakdown-voltage diode device 1 can be performed in a state where the device is physically disconnected. That is, the insulating atmosphere, which was conventionally required in the high withstand voltage characteristic test,
In particular, the use of SF 6 gas atmosphere can be abolished. Therefore,
Global warming can be prevented, and destruction of the ozone layer can be prevented.
【００４２】このように、本発明の第１の実施の形態に
係る高電圧試験方法によれば、高耐圧ダイオード装置、
高耐圧トランジスタ装置、あるいは高耐圧サイリスタ装
置等種々の被測定対象物の逆方向耐圧特性や逆方向ブロ
ッキング特性等を簡単且つ正確に測定評価でき、そのラ
ンニングコストも低い。As described above, according to the high voltage test method according to the first embodiment of the present invention, a high breakdown voltage diode device,
Reverse breakdown voltage characteristics and reverse blocking characteristics of various objects to be measured such as a high breakdown voltage transistor device or a high breakdown voltage thyristor device can be easily and accurately measured and evaluated, and the running cost is low.
【００４３】（第２の実施の形態）本発明の第２の実施
の形態は、前述の第１の実施の形態に係る高電圧試験装
置１０において、被測定対象物（高耐圧ダイオード装
置）１の樹脂封止体４の表面又はその近傍に発生する放
電経路の遮断性能をさらに向上させる場合を説明する。(Second Embodiment) In a second embodiment of the present invention, the object to be measured (high breakdown voltage diode device) 1 in the high voltage test apparatus 10 according to the first embodiment described above. The case where the performance of blocking the discharge path generated on the surface of the resin sealing body 4 or in the vicinity thereof will be further improved will be described.
【００４４】図６は、本発明の第２の実施の形態に係る
高電圧試験装置１０のシステム構成の要部を示す概略図
である。図６に示す高電圧試験装置１０は、被測定対象
物となる高耐圧ダイオード装置１の第１リード３Ａ及び
第２のリード３Ｂ間の封止体４の表面に当接する絶縁遮
蔽体２０と、これらの第１リード３Ａ及び第２のリード
３Ｂ間に高電圧を印加する高電圧供給部（図示省略）
と、第１及び第２のリード間の電気的特性を測定する特
性測定部（図示省略）とを少なくとも有している。そし
て、絶縁遮蔽体２０の固定側絶縁遮蔽体２０Ａに吸引孔
２０Ｅ、可動側絶縁遮蔽体２０Ｂに吸引孔２０Ｆがそれ
ぞれ配設されている。吸引孔２０Ｅ、２０Ｆはいずれも
吸引機能を生成する真空装置２５に連接される。FIG. 6 is a schematic diagram showing a main part of a system configuration of a high voltage test apparatus 10 according to a second embodiment of the present invention. The high-voltage test apparatus 10 shown in FIG. 6 includes an insulating shield 20 that contacts the surface of the sealing body 4 between the first lead 3A and the second lead 3B of the high-voltage diode device 1 to be measured; A high voltage supply unit (not shown) for applying a high voltage between the first lead 3A and the second lead 3B.
And at least a characteristic measuring unit (not shown) for measuring electric characteristics between the first and second leads. A suction hole 20E is provided in the fixed-side insulating shield 20A of the insulating shield 20, and a suction hole 20F is provided in the movable-side insulating shield 20B. Each of the suction holes 20E and 20F is connected to a vacuum device 25 that generates a suction function.
【００４５】このように構成される高電圧試験装置１０
においては、高耐圧特性試験の際に、真空装置２５から
吸引孔２０Ｅを通して得られる吸引力により固定側絶縁
遮蔽体２０Ａの当接部（２０Ｃ、図３参照）と高耐圧ダ
イオード装置１の樹脂封止体４との間の密着性が向上さ
れる。同様に、真空装置２５から吸引孔２０Ｆを通して
得られる吸引力により可動側絶縁遮蔽体２０Ｂの当接部
（２０Ｄ、図３参照）と高耐圧ダイオード装置１の樹脂
封止体４との間の密着性が向上される。従って、高耐圧
ダイオード装置１のリード３Ａ、３Ｂ間であって樹脂封
止体４の表面に生成される放電経路の遮断性能が向上で
きる。The high voltage test apparatus 10 constructed as described above
At the time of the high withstand voltage characteristic test, the contact portion (20C, see FIG. 3) of the fixed-side insulating shield 20A and the resin sealing of the high withstand voltage diode device 1 are performed by the suction force obtained from the vacuum device 25 through the suction hole 20E. Adhesion with the stop 4 is improved. Similarly, the contact between the contact portion (20D, see FIG. 3) of the movable-side insulating shield 20B and the resin sealing body 4 of the high-voltage diode device 1 is caused by the suction force obtained from the vacuum device 25 through the suction hole 20F. The performance is improved. Therefore, the breaking performance of the discharge path generated between the leads 3A and 3B of the high breakdown voltage diode device 1 and on the surface of the resin sealing body 4 can be improved.
【００４６】（第３の実施の形態）本発明の第３の実施
の形態は、前述の第２の実施の形態と同様に、被測定対
象物（高耐圧ダイオード装置）１の樹脂封止体４の表面
又はその近傍に発生する放電経路の遮断性能をさらに向
上させるための技術を説明する。(Third Embodiment) In a third embodiment of the present invention, similarly to the above-described second embodiment, a resin sealed body of an object to be measured (high breakdown voltage diode device) 1 A technique for further improving the performance of interrupting a discharge path generated at or near the surface of No. 4 will be described.
【００４７】図７は、本発明の第３の実施の形態に係る
高電圧試験装置１０のシステム構成の要部を示す概略図
である。図７に示す高電圧試験装置１０は、被測定対象
物となる高耐圧ダイオード装置１の第１リード３Ａ及び
第２のリード３Ｂ間の封止体４の表面に当接する絶縁遮
蔽体２０と、これらの第１リード３Ａ及び第２のリード
３Ｂ間に高電圧を印加する高電圧供給部（図示省略）
と、第１及び第２のリード間の電気的特性を測定する特
性測定部（図示省略）とを少なくとも有している。そし
て、この高電圧試験装置１０は、絶縁遮蔽体２０の固定
側絶縁遮蔽体２０Ａに吹出孔２Ｇ、可動側絶縁遮蔽体２
０Ｂに吹出孔２０Ｈがそれぞれ配設されている。吹出孔
２０Ｇ、２０Ｈはいずれもドライエアー（乾燥空気）を
吹き出すドライエアー吹出装置２６に連接されている。FIG. 7 is a schematic diagram showing a main part of a system configuration of a high-voltage test apparatus 10 according to a third embodiment of the present invention. The high-voltage test apparatus 10 shown in FIG. 7 includes an insulating shield 20 that contacts the surface of the sealing body 4 between the first lead 3A and the second lead 3B of the high-voltage diode device 1 to be measured; A high voltage supply unit (not shown) for applying a high voltage between the first lead 3A and the second lead 3B.
And at least a characteristic measuring unit (not shown) for measuring electric characteristics between the first and second leads. The high-voltage test apparatus 10 is configured such that the fixed-side insulating shield 20A of the insulating shield 20 has a blowout hole 2G and a movable-side insulating shield 2A.
The outlet holes 20H are provided at 0B, respectively. Each of the blowout holes 20G and 20H is connected to a dry air blowing device 26 that blows out dry air (dry air).
【００４８】このように構成される高電圧試験装置１０
においては、高耐圧特性試験の際に、ドライエアー吹出
装置２６から吹出孔２０Ｇを通して高耐圧ダイオード装
置１の樹脂封止体４上側表面にドライエアーが吹き付け
られる。同様に、ドライエアー吹出装置２６から吹出孔
２０Ｈを通して高耐圧ダイオード装置１の樹脂封止体４
下側表面にドライエアーが吹き付けられる。ドライエア
ーの吹き付けは、空気中の絶縁性を向上し、また樹脂封
止体４の表面状態を放電経路を発生しにくい方向に改質
できる。従って、高耐圧ダイオード装置１の第１リード
３Ａ及び第２のリード３Ｂ間であって樹脂封止体４表面
に生成される放電経路の遮断性能が向上できる。The high voltage test apparatus 10 constructed as described above
At the time of the high voltage resistance test, dry air is blown from the dry air blowing device 26 to the upper surface of the resin sealing body 4 of the high voltage diode device 1 through the blowing hole 20G. Similarly, the resin sealing body 4 of the high voltage diode device 1 is passed from the dry air blowing device 26 through the blowing hole 20H.
Dry air is blown on the lower surface. The blowing of the dry air improves the insulating property in the air, and can modify the surface state of the resin sealing body 4 in a direction in which a discharge path is hardly generated. Therefore, the breaking performance of the discharge path generated between the first lead 3A and the second lead 3B of the high breakdown voltage diode device 1 and on the surface of the resin sealing body 4 can be improved.
【００４９】（その他の実施の形態）上記のように、本
発明は第１乃至第３の実施の形態によって記載したが、
この開示の一部をなす論述及び図面はこの発明を限定す
るものであると理解すべきではない。この開示から当業
者には様々な代替実施の形態、実施例及び運用技術が明
らかとなろう。(Other Embodiments) As described above, the present invention has been described with reference to the first to third embodiments.
The discussion and drawings that form part of this disclosure should not be understood as limiting the invention. From this disclosure, various alternative embodiments, examples, and operation techniques will be apparent to those skilled in the art.
【００５０】たとえば、前述の実施の形態に限定され
ず、以下の変形を行える。For example, the present invention is not limited to the above-described embodiment, and the following modifications can be made.
【００５１】（１）第１乃至第３の実施の形態のそれぞ
れに係る高電圧試験装置１０において、絶縁遮蔽体２０
の固定側絶縁遮蔽体２０Ａは、可動側絶縁遮蔽体２０Ｂ
と同様に可動式にしてもよい。(1) In the high voltage test apparatus 10 according to each of the first to third embodiments, the insulating shield 20
The fixed-side insulating shield 20A of FIG.
In the same manner as described above, the movable type may be used.
【００５２】（２）第１乃至第３の実施の形態のそれぞ
れに係る高電圧試験装置１０において、絶縁遮蔽体２０
の固定側絶縁遮蔽体２０Ａ、可動側絶縁遮蔽体２０Ｂは
いずれも絶縁性ガラス系板材で形成してもよい。この場
合、固定側絶縁遮蔽体２０Ａの当接部２０Ｃ、可動側絶
縁遮蔽体２０Ｂの当接部２０Ｄは被測定対象物（高耐圧
ダイオード装置）１の樹脂封止体４の半径とほぼ同一半
径を有する半円形状で形成される。(2) In the high voltage test apparatus 10 according to each of the first to third embodiments, the insulating shield 20
Both the fixed-side insulating shield 20A and the movable-side insulating shield 20B may be formed of an insulating glass-based plate material. In this case, the contact portion 20C of the fixed-side insulating shield 20A and the contact portion 20D of the movable-side insulating shield 20B have substantially the same radius as the radius of the resin sealing body 4 of the object to be measured (high-voltage diode device) 1. Is formed in a semicircular shape having
【００５３】（３）第１乃至第３の実施の形態のそれぞ
れに係る高電圧試験装置１０において、高電圧供給部１
３、特性測定部１４、特性判定部１５のいずれか１つの
ユニットが外部ユニットとして連結されていてもよい。(3) In the high voltage test apparatus 10 according to each of the first to third embodiments, the high voltage supply unit 1
3. Any one unit of the characteristic measuring unit 14 and the characteristic determining unit 15 may be connected as an external unit.
【００５４】（４）第２の実施の形態に係る高電圧試験
装置１０において、絶縁遮蔽体２０にいずれか一方の吸
引孔２０Ｅ又は２０Ｆだけが形成されてもよい。(4) In the high voltage test apparatus 10 according to the second embodiment, only one of the suction holes 20E or 20F may be formed in the insulating shield 20.
【００５５】（５）本発明は、樹脂封止体４外部にほぼ
平行に引き出されたリード３Ａ及び３Ｂを有する高耐圧
ダイオードに適用できる。(5) The present invention can be applied to a high-breakdown-voltage diode having leads 3A and 3B extending almost parallel to the outside of the resin sealing body 4.
【００５６】（６）さらに、本発明は、高耐圧ダイオー
ド以外の高耐圧トランジスタ、高耐圧ＩＧＢＴ，高耐圧
ＧＴＯ，高耐圧ＳＩサイリスタ、その他の高耐圧サイリ
スタ等の種々の高耐圧半導体装置を被測定対象物とする
ことが出来る。すなわち、本発明の被測定対象物には、
第１及び第２のリード以外の第３，第４、・・・・・・のリー
ドがあってもかまわず、トランジスタ等の３端子デバイ
ス、サイリスタ等の４端子デバイス、あるいはパワーＩ
Ｃ等の多端子デバイスでもかまわない。それらの複数の
リードの内から高電圧を印加しようとする２つのリード
を選び、その選ばれたリード間の封止体表面に絶縁遮蔽
体を当接すればよいのである。このように、端子数に制
限されず、高電圧の試験信号を供給する必要がある広範
な被測定対象物に対する高電圧試験装置、高電圧試験方
法に適用できる。(6) The present invention further measures various high voltage semiconductor devices such as high voltage transistors other than high voltage diodes, high voltage IGBTs, high voltage GTOs, high voltage SI thyristors, and other high voltage thyristors. It can be an object. That is, the object to be measured of the present invention includes:
There may be third, fourth,... Leads other than the first and second leads, and a three-terminal device such as a transistor, a four-terminal device such as a thyristor, or a power I
A multi-terminal device such as C may be used. From among the plurality of leads, two leads to which a high voltage is to be applied are selected, and the insulating shield may be brought into contact with the surface of the sealing body between the selected leads. Thus, the present invention is not limited to the number of terminals, and can be applied to a high-voltage test apparatus and a high-voltage test method for a wide range of objects to be measured that need to supply a high-voltage test signal.
【００５７】このように、本発明はここでは記載してい
ない様々な実施の形態等を包含するということを理解す
べきである。したがって、本発明はこの開示から妥当な
特許請求の範囲に係る発明特定事項によってのみ限定さ
れるものである。As described above, it should be understood that the present invention includes various embodiments and the like not described herein. Accordingly, the present invention is limited only by the matters specifying the invention according to the claims that are reasonable from this disclosure.
【００５８】[0058]
【発明の効果】本発明によれば、高電圧試験装置の構造
を簡易化しつつ小型化が実現できる。また、本発明によ
れば、高耐圧半導体装置の逆方向耐圧特性や逆方向ブロ
ッキング特性等を、簡単な操作と低いランニングコスト
で測定評価できる高電圧試験装置を提供できる。According to the present invention, downsizing can be realized while simplifying the structure of the high voltage test apparatus. Further, according to the present invention, it is possible to provide a high-voltage test apparatus capable of measuring and evaluating the reverse breakdown voltage characteristic, the reverse blocking characteristic, and the like of the high breakdown voltage semiconductor device with simple operation and low running cost.
【００５９】さらに、本発明によれば、地球温暖化の防
止やオゾン層の破壊の防止に好適で、環境問題に対応し
た高電圧試験装置を提供できる。Further, according to the present invention, it is possible to provide a high voltage test apparatus suitable for prevention of global warming and prevention of destruction of the ozone layer and corresponding to environmental problems.
【００６０】さらに、本発明によれば、SF6ガスを使用
せず、操作やメインテナンスの容易な高電圧試験方法を
提供できる。[0060] Further, according to the present invention, without the use of SF 6 gas can provide easy high voltage test method of the operation and maintenance.
【００６１】さらに、本発明によれば、地球温暖化の防
止やオゾン層の破壊の防止に好適で、環境問題に対応し
た高電圧試験方法を提供できる。Further, according to the present invention, it is possible to provide a high voltage test method suitable for prevention of global warming and destruction of the ozone layer and corresponding to environmental problems.
【００６２】さらに、本発明によれば、高耐圧半導体装
置の逆方向耐圧特性や逆方向ブロッキング特性等の特性
を、簡単、且つ正確に測定評価できる高電圧試験方法を
提供できる。Further, according to the present invention, it is possible to provide a high voltage test method capable of easily and accurately measuring and evaluating characteristics such as a reverse breakdown voltage characteristic and a reverse blocking characteristic of a high breakdown voltage semiconductor device.
【図１】本発明の第１の実施の形態に係る高電圧試験装
置のシステム構成を示す概略正面図である。FIG. 1 is a schematic front view showing a system configuration of a high-voltage test apparatus according to a first embodiment of the present invention.
【図２】高電圧試験装置の概略側面図である。FIG. 2 is a schematic side view of a high-voltage test apparatus.
【図３】高電圧試験装置の絶縁遮蔽体の斜視図である。FIG. 3 is a perspective view of an insulating shield of the high-voltage test device.
【図４】高電圧試験工程における高電圧試験装置のシス
テム構成を示す概略正面図である。FIG. 4 is a schematic front view showing a system configuration of a high voltage test device in a high voltage test step.
【図５】高電圧試験工程における高電圧試験装置の概略
側面図である。FIG. 5 is a schematic side view of a high voltage test device in a high voltage test step.
【図６】本発明の第２の実施の形態に係る高電圧試験装
置のシステム構成の要部を示す概略図である。FIG. 6 is a schematic diagram showing a main part of a system configuration of a high-voltage test device according to a second embodiment of the present invention.
【図７】本発明の第３の実施の形態に係る高電圧試験装
置のシステム構成の要部を示す概略図である。FIG. 7 is a schematic diagram illustrating a main part of a system configuration of a high-voltage test apparatus according to a third embodiment of the present invention.
【図８】本発明、並びに従来技術に係る樹脂封止型高耐
圧ダイオード装置の一部断面化した構成図である。FIG. 8 is a partially sectional view showing a configuration of a resin-sealed high voltage diode device according to the present invention and a conventional technique.
１ 高耐圧ダイオード装置（被測定対象物） ２ 高耐圧ダイオード素子 ３Ａ 第１のリード ３Ｂ 第２のリード ４ 樹脂封止体 １０ 耐圧特性試験装置（高電圧試験装置） １１ 半導体装置搬送部 １１Ａ，１１Ｂ 搬送レール １１Ｃ，１１Ｄ 溝 １２ 搬送駆動部 １３ 高電圧供給部 １３Ａ，１３Ｂ 電圧印加端子 １４ 特性測定部 １５ 特性判定部 ２０ 絶縁遮蔽体 ２０Ａ 固定側絶縁遮蔽体 ２０Ｂ 可動側絶縁遮蔽体 ２０Ｃ，２０Ｄ 当接部 ２１ 遮蔽体駆動部 DESCRIPTION OF SYMBOLS 1 High voltage diode device (measured object) 2 High voltage diode element 3A 1st lead 3B 2nd lead 4 Resin sealing object 10 Pressure resistance characteristic test device (high voltage test device) 11 Semiconductor device conveyance part 11A, 11B Transport rail 11C, 11D Groove 12 Transport drive unit 13 High voltage supply unit 13A, 13B Voltage application terminal 14 Characteristic measurement unit 15 Characteristic determination unit 20 Insulation shield 20A Fixed-side insulation shield 20B Movable-side insulation shield 20C, 20D Contact Unit 21 Shield drive unit
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G01R 31/26 G01R 31/12 H01L 21/66 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G01R 31/26 G01R 31/12 H01L 21/66
Claims (4)
のリード間の封止体とからなる被測定対象物の前記封止
体の表面の一部に当接する固定側当接部、該固定側当接
部に開口部を有する固定側吸引孔とを有する固定側絶縁
遮蔽体と、 前記封止体の表面の他の一部に当接する可動側当接部、
該可動側当接部に開口部を有する可動側吸引孔とを有す
る可動側絶縁遮蔽体と、 前記固定側吸引孔及び可動側吸引孔とに連接された真空
装置と、 前記第１及び第２のリード間に高電圧を印加する高電圧
供給部と、 前記第１及び第２のリード間の電気的特性を測定する特
性測定部とを少なくとも有することを特徴とする高電圧
試験装置。A first lead connected to the first lead and the second lead connected to the first lead;
A fixed-side contact portion that abuts a part of the surface of the sealed body of the object to be measured composed of the sealed body between the leads, and a fixed-side suction hole having an opening in the fixed-side contact portion. A fixed-side insulating shield having, a movable-side contact portion that contacts another part of the surface of the sealing member,
A movable-side insulating shield having a movable-side suction hole having an opening at the movable-side contact portion; a vacuum device connected to the fixed-side suction hole and the movable-side suction hole; A high voltage supply unit for applying a high voltage between the leads, and a characteristic measuring unit for measuring an electric characteristic between the first and second leads.
のリード間の封止体とからなる被測定対象物の前記封止
体の表面の一部に当接する固定側当接部、該固定側当接
部に開口部を有する固定側吹出孔とを有する固定側絶縁
遮蔽体と、 前記封止体の表面の他の一部に当接する可動側当接部、
該可動側当接部に開口部を有する可動側吹出孔とを有す
る可動側絶縁遮蔽体と、 前記固定側吹出孔及び可動側吹出孔とに連接されたドラ
イエアー吹出装置と、 前記第１及び第２のリード間に高電圧を印加する高電圧
供給部と、 前記第１及び第２のリード間の電気的特性を測定する特
性測定部とを少なくとも有することを特徴とする高電圧
試験装置。2. The first and second leads, the first and second leads.
A fixed-side abutting portion that abuts a part of the surface of the sealed body of the object to be measured composed of the sealed body between the leads, and a fixed-side outlet having an opening in the fixed-side abutting portion. A fixed-side insulating shield having, a movable-side contact portion that contacts another part of the surface of the sealing member,
A movable-side insulating shield having a movable-side outlet having an opening in the movable-side abutting portion; a dry-air outlet connected to the fixed-side outlet and the movable-side outlet; A high-voltage test apparatus comprising at least a high-voltage supply unit for applying a high voltage between second leads, and a characteristic measuring unit for measuring electrical characteristics between the first and second leads.
のリード間の封止体とからなる被測定対象物の前記封止
体の表面の一部に可動側絶縁遮蔽体の可動側当接部を当
接するステップと、 該可動側絶縁遮蔽体を、前記封止体の表面の他の一部が
固定側絶縁遮蔽体の固定側当接部に当接するまで上昇さ
せるステップと、 前記可動側絶縁遮蔽体の可動側当接部に開口部を有する
可動側吸引孔、及び前記固定側絶縁遮蔽体の固定側当接
部に開口部を有する固定側吸引孔を介して前記被測定対
象物を真空吸着するステップと、 前記第１及び第２のリード間に高電圧を印加するステッ
プと、 前記第１及び第２のリード間の電気的特性を測定するス
テップとを少なくとも有することを特徴とする高電圧試
験方法。3. The first and second leads, and the first and second leads.
Abutting the movable-side contact portion of the movable-side insulating shield on a part of the surface of the sealed body of the object to be measured consisting of the sealing body between the leads of the movable-side insulating shield; Raising the other part of the surface of the sealing body until it comes into contact with the fixed-side contact part of the fixed-side insulating shield; and moving the movable-side insulating shield with an opening in the movable-side contact part. Vacuum-sucking the object to be measured through a side suction hole and a fixed side suction hole having an opening at a fixed side contact portion of the fixed side insulating shield; and between the first and second leads. A high voltage test method, comprising: applying a high voltage to the first and second electrodes; and measuring an electrical characteristic between the first and second leads.
のリード間の封止体とからなる被測定対象物の前記封止
体の表面の一部に可動側絶縁遮蔽体の可動側当接部を当
接するステップと、 該可動側絶縁遮蔽体を、前記封止体の表面の他の一部が
固定側絶縁遮蔽体の固定側当接部に当接するまで上昇さ
せるステップと、 前記可動側絶縁遮蔽体の可動側当接部に開口部を有する
可動側吹出孔、及び前記固定側絶縁遮蔽体の固定側当接
部に開口部を有する固定側吹出孔を介して前記被測定対
象物の前記封止体の表面にドライエアーを吹き付けるス
テップと、 前記第１及び第２のリード間に高電圧を印加するステッ
プと、 前記第１及び第２のリード間の電気的特性を測定するス
テップとを少なくとも有することを特徴とする高電圧試
験方法。4. The first and second leads, the first and second leads.
Abutting the movable-side contact portion of the movable-side insulating shield on a part of the surface of the sealed body of the object to be measured consisting of the sealing body between the leads of the movable-side insulating shield; Raising the other part of the surface of the sealing body until it comes into contact with the fixed-side contact part of the fixed-side insulating shield; and moving the movable-side insulating shield with an opening in the movable-side contact part. Blowing dry air to the surface of the sealed body of the object to be measured through a fixed-side outlet having an opening at a fixed-side abutting portion of the fixed-side insulating shield, and a side-side outlet; and A high voltage test method comprising: at least applying a high voltage between first and second leads; and measuring an electrical characteristic between the first and second leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07458698A JP3262063B2 (en) | 1998-03-23 | 1998-03-23 | High voltage test equipment and high voltage test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07458698A JP3262063B2 (en) | 1998-03-23 | 1998-03-23 | High voltage test equipment and high voltage test method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11271387A JPH11271387A (en) | 1999-10-08 |
| JP3262063B2 true JP3262063B2 (en) | 2002-03-04 |
Family
ID=13551424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07458698A Expired - Fee Related JP3262063B2 (en) | 1998-03-23 | 1998-03-23 | High voltage test equipment and high voltage test method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3262063B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6754733B2 (en) | 2001-08-23 | 2004-06-22 | Texas Instruments Incorporated | Shared memory architecture for increased bandwidth in a printer controller |
| AT412175B (en) * | 2002-04-12 | 2004-10-25 | Rainer Dr Gaggl | DEVICE FOR AVOIDING SPARK FLASHES IN THE HIGH VOLTAGE TESTING OF SEMICONDUCTOR COMPONENTS |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5375745B2 (en) | 2010-06-02 | 2013-12-25 | 富士電機株式会社 | Test apparatus and test method |
| JP5771564B2 (en) * | 2012-06-11 | 2015-09-02 | 株式会社エクシム | Electrical test apparatus and electrical test method |
| JP6339345B2 (en) * | 2013-10-31 | 2018-06-06 | 三菱電機株式会社 | Semiconductor evaluation apparatus and semiconductor evaluation method |
| JP6213369B2 (en) | 2014-05-13 | 2017-10-18 | 三菱電機株式会社 | measuring device |
| JP6779668B2 (en) * | 2016-05-31 | 2020-11-04 | ソーラーフロンティア株式会社 | Insulation inspection equipment |
| CN106353652B (en) * | 2016-09-30 | 2023-07-18 | 上海电力设计院有限公司 | High-voltage electrical equipment withstand voltage test auxiliary platform |
-
1998
- 1998-03-23 JP JP07458698A patent/JP3262063B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6754733B2 (en) | 2001-08-23 | 2004-06-22 | Texas Instruments Incorporated | Shared memory architecture for increased bandwidth in a printer controller |
| AT412175B (en) * | 2002-04-12 | 2004-10-25 | Rainer Dr Gaggl | DEVICE FOR AVOIDING SPARK FLASHES IN THE HIGH VOLTAGE TESTING OF SEMICONDUCTOR COMPONENTS |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11271387A (en) | 1999-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5341003A (en) | MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element | |
| JP3646023B2 (en) | High current capacity semiconductor device package and lead frame with large area connection post and improved outer shape | |
| CN102313864B (en) | Test equipment and method of testing | |
| US4907068A (en) | Semiconductor arrangement having at least one semiconductor body | |
| JP3262063B2 (en) | High voltage test equipment and high voltage test method | |
| ITMI941840A1 (en) | MODULE OF HIGH POWER SEMICONDUCTOR DEVICES WITH LOW THERMAL RESISTANCE AND SIMPLIFIED MANUFACTURING METHOD | |
| EP0477502B1 (en) | Electronic circuit | |
| US4764802A (en) | Semiconductor devices | |
| EP0697728B1 (en) | MOS-technology power device chip and package assembly | |
| US20040232113A1 (en) | Electric switching device for medium or high voltage | |
| US11139125B2 (en) | Power relay circuit | |
| US20200312729A1 (en) | Manufacturing method of semiconductor module | |
| JP3612226B2 (en) | Semiconductor device and semiconductor module | |
| CN116344616A (en) | High-voltage MOS device and testing method thereof | |
| CN111033723B (en) | power semiconductor module | |
| US6709969B1 (en) | Method for fabricating a gas insulated gate field effect transistor | |
| US20230274990A1 (en) | Power Semiconductor Module System and Method for Producing the Power Semiconductor Module System | |
| US20240203890A1 (en) | Power module and method for producing a power module | |
| US20220407432A1 (en) | Semiconductor module | |
| JP4287134B2 (en) | Module housing and power semiconductor module | |
| US11569141B2 (en) | Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode | |
| JPH1050897A (en) | Semiconductor device | |
| CN110767643B (en) | Electrical device | |
| Ishii et al. | A high voltage intelligent power module (HVIPM) with a high performance gate driver | |
| JPH05209932A (en) | Method of measuring high insulating proof-voltage of resin-molded semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |