CN110767643B - Electrical device - Google Patents
Electrical device Download PDFInfo
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- CN110767643B CN110767643B CN201810827090.XA CN201810827090A CN110767643B CN 110767643 B CN110767643 B CN 110767643B CN 201810827090 A CN201810827090 A CN 201810827090A CN 110767643 B CN110767643 B CN 110767643B
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- conductive block
- power semiconductor
- circuit board
- semiconductor element
- electrical device
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- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000002788 crimping Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses an electrical device, comprising: a power semiconductor element, wherein a control electrode and a current electrode of the power semiconductor element are annularly arranged, the control electrode is arranged on an annular outer ring, and the current electrode is arranged on an inner ring; a driving module including at least one switching element for driving the power semiconductor element; one or more first conductive blocks disposed on one side of the power semiconductor element for providing connection of the switching element to the current electrode; the elastic structure comprises a base, an auxiliary elastic piece and a spring. The electric device has the characteristics of small commutation surface area, low stray inductance of the commutation loop and high commutation speed, and the elastic structure in the electric device provides pressure for the contact surface of the conductive block and the circuit board, so that the contact resistance is reduced, and the upper pressure limit value born by the surface of the switch element can be limited.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to an electric device.
Background
In the face of rapid development of power electronics technology, users put forward requirements on power semiconductor devices (also referred to herein simply as semiconductor devices or power devices) for fast commutation speed during turn-off, high turn-off reliability, good heat dissipation performance, and the like. The package structure of the power semiconductor device is particularly critical for good electrical connection between the semiconductor device and an external circuit, especially for power semiconductor devices suitable for use in high voltage, high current environments.
In the power semiconductor device in the prior art, a power semiconductor element (sometimes referred to as a device wafer, a device chip or a device die) and a turn-off module are generally placed in a package (sometimes referred to as a tube shell), and the inner side and the outer side of a gate ring of the power semiconductor element are both cathodes, so that a conductive block for connecting the cathodes needs to be isolated from a plurality of channels for connecting the gates, i.e. a plurality of cathode conductive blocks are needed, which results in a complex package structure.
In addition, since the molybdenum sheet needs to be crimped on both sides of the GCT or GTO when the GCT or GTO is used, and pressure of several tens of newtons or more needs to be applied when the molybdenum sheet is crimped, the pressure to which the switching element in the driving module is subjected in the process may be far greater than the pressure that the switching element can withstand, wherein a single switching element can only withstand 50-100N of pressure, and thus, if the switching element is integrated in the package, there are pressure differences and matching problems of different components.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an electric device which has the characteristics of small current-converting surface area, low stray inductance of the current-converting circuit, high current-converting speed and strong heat dissipation capability.
In view of the above, the present invention aims to provide an electrical device, which adopts the following technical scheme: an electrical device, comprising:
A power semiconductor element, wherein a control electrode and a current electrode of the power semiconductor element are annularly arranged, the control electrode is arranged on an annular outer ring, and the current electrode is arranged on an inner ring;
a driving module including at least one switching element for driving the power semiconductor element; the switching elements are arranged in a circular array or a matrix array, wherein the switching elements include drain and source terminals as current terminals and a gate terminal as a control terminal;
One or more first conductive blocks disposed on one side of the power semiconductor element for providing connection of the switching element to the current electrode;
The elastic structure comprises a base, auxiliary elastic pieces and a spring, wherein the bottom of the base is coupled with the top of a drain terminal of the switch element, a groove is further formed in the base, one end of the spring is coupled with the groove of the base, the other end of the spring is coupled with the groove at the bottom of the first conductive block, the auxiliary elastic pieces are arranged on two sides of the spring, and one end of each auxiliary elastic piece is coupled with the base.
Further, when the drain terminals of the switching elements in the same array are at different potentials, a plurality of first conductive blocks are arranged to be associated with the switching elements, and insulating ring spacers are arranged between the different first conductive blocks.
Further, when the source terminals of the switching elements in the same array are at different potentials, a plurality of second conductive blocks are provided in association with the switching elements.
Further, at least one circuit board is also included, and a drain terminal and a gate terminal of the switching element are coupled to the circuit board.
Further, at least one second conductive block is included, the second conductive block being coupled with the circuit board;
When the pressure applied between the first conductive block and the second conductive block is smaller than or equal to a preset pressure value, the first conductive block is not contacted with the circuit board, and the first conductive block can be connected with the drain terminal of the switching element only through the elastic structure;
When the pressure applied between the first conductive block and the second conductive block is larger than the preset pressure value, the first conductive block is in contact with the circuit board, and the first conductive block can be connected with the drain terminal of the switching element through the elastic structure or the drain of the switching element through the circuit board.
Further, one or more connection members are provided at a side of the first conductive block and spaced apart from the first conductive block, the connection members are connected to a portion of the control electrode, and the connection members are associated with the respective switching elements through elastic structures.
Further, the drive module also includes a capacitor attached to the circuit board.
Further, a passage for cooling is provided in the first conductive block.
Further, the method further comprises the following steps:
a coaxial cable for connecting the circuit board to the outside;
A third conductive block coupled to a current electrode of the power semiconductor element; and
And a package case which encapsulates the power semiconductor element and the driving module together with the second conductive block and the third conductive block.
Further, the power semiconductor element may include a Gate Commutated Thyristor (GCT), a gate turn-off thyristor (GTO).
Compared with the prior art, the invention has the following beneficial effects:
1. The electric device integrates the turn-off loop of the driving module into the tube shell, so that the area of a current conversion loop is obviously reduced, the stray inductance of the current conversion loop is reduced, and the current conversion speed is improved.
2. The elastic structure of the electric device can ensure that the switching element is tightly connected with the cathode of the power semiconductor element through the conductive block, and can limit the upper limit value of the pressure born by the surface of the switching element, so that the switching element cannot be crushed due to overlarge pressure, and the pressure range applied between the first conductive block and the second conductive block is larger, and the application range is wider.
3. The elastic structure also provides pressure for the contact surface of the conductive block and the circuit board, reduces contact resistance, increases flow area by utilizing the auxiliary elastic sheet, thereby increasing the flow capacity of the integral structure.
4. The electric device is provided with a water cooling channel, so that the effective heat dissipation of the power semiconductor element can be further ensured.
5. The electrical device can be used for a thyristor type device with the gate ring at the outer side, so that only one cathode conducting block is designed in the electrical device, the structure is simplified, and the production cost is reduced.
6. The switch element adopts a parallel array, and has simple and compact structure.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an electrical device according to an embodiment of the present invention;
Fig. 2 is a schematic view showing an arrangement of power semiconductor elements in an electric device in an embodiment of the present invention;
FIG. 3 is a schematic view of a switching element ring arrangement in an embodiment of the invention;
FIG. 4 is a schematic view of another switching element ring arrangement in an embodiment of the invention;
FIG. 5 is a schematic view of an elastic structure according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a circuit board structure according to an embodiment of the invention;
Fig. 7 is a schematic diagram showing a structural arrangement of a MOSFET suitable for crimping in an electric device according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an electrical device in accordance with an embodiment of the present invention;
FIG. 9 is a schematic diagram of another electrical device in accordance with an embodiment of the present invention;
Fig. 10 is a schematic structural arrangement of a crimping MOSFET in an embodiment of the invention;
fig. 11a is a schematic structural arrangement of another crimping MOSFET in an embodiment of the invention;
FIG. 11b is a schematic diagram of a press-fit MOSFET package according to an embodiment of the present invention;
FIG. 12 is a schematic circuit diagram of an electrical device in an embodiment of the invention;
fig. 13 is a schematic circuit diagram of another electrical device in an embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a schematic structural diagram of an electrical device is shown in an embodiment of the present invention, where the electrical device shown in fig. 1 includes a third conductive block 5, a power semiconductor element 4, a first conductive block 7, a connection member 9, an elastic structure 8, a switching element, a circuit board 15, and a second conductive block 16. Wherein, the surface of the power semiconductor element 4 is connected with a conductive sheet, the conductive sheet 3 is connected with the upper surface of the power semiconductor element 4, the conductive sheet 6 is connected with the lower surface of the power semiconductor element 4, and the conductive sheets 3, 6 can be (but not limited to) metal sheets, such as molybdenum sheets. The conducting strip 6 is connected with a first conducting block 7, at least one groove is arranged at the bottom of the first conducting block 7, an elastic structure and a switching element are arranged in the groove, the first conducting block 7 is further used for providing electric connection from the power semiconductor element 4 to a current electrode of the switching element, the switching element is connected with a circuit board 15, and the circuit board 15 is further connected with a second conducting block 16.
The connecting pieces 9 are disposed on both sides of the first conductive block 7 and are isolated from the first conductive block 7, and thus, insulating blocks 10 are disposed on the outer sides of the connecting pieces 9. The connection piece 9 is connected at one end to the control electrode (gate) of the power semiconductor element and at the other end to the associated switching element via the associated elastic structure 8.
In the present embodiment, examples of the power semiconductor element 4 may include, but are not limited to, a normal thyristor SCR, a gate commutated thyristor GCT, a gate turn-off thyristor GTO, and the like. The power semiconductor element 4 may be formed in a semiconductor substrate, and thus, in fig. 1,4 may also be used to indicate the semiconductor substrate. A gate electrode (also referred to as a control electrode) and a current electrode (e.g., a cathode K) of the power semiconductor element 4 are arranged on one surface of the semiconductor substrate.
In this embodiment, the power semiconductor element may have a control electrode (gate G) and current electrodes (anode a and cathode K), and the control electrode and the current electrodes of the power semiconductor element 4 are arranged in a ring on the semiconductor substrate. As shown in fig. 2, the control electrode (gate) 41 is disposed on an annular outer ring, and the current electrode 42 (cathode or anode) is disposed on an inner ring.
In this embodiment, a driving module is disposed on the circuit board, where the driving module may include a turn-off module and a turn-on module, where the turn-off module includes at least one switching element, and the switching element includes a drain terminal and a source terminal as current terminals and a gate terminal as a control terminal; the drain terminal and the gate terminal of the switching element are coupled to the circuit board. In fig. 1, the circuit board is provided with a switching element QG and a switching element QE; the switching element QG includes a drain terminal 11, a source terminal 12, and a gate terminal 18, the drain terminal 11 and the gate terminal 18 being coupled to the circuit board 15, the source terminal 12 being connected to the second conductive block 16. Similarly, the switching element QE includes a drain terminal 13, a source terminal 14, and a gate terminal 17, the drain terminal 13 and the gate terminal 17 being coupled to the circuit board 15, the source terminal 14 being connected to the second conductive block 16; preferably, in order to ensure that the second conductive block 16 is tightly connected to the source terminal of the switching element, a protrusion is provided on the second conductive block 16, and the height of the protrusion is consistent with the thickness of the circuit board 15.
In this embodiment, the switching element may include DIRECTFET or a crimped MOSFET array; wherein said DIRECTFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) produced and sold by international rectifier company (International Rectifier company), the metal housing of which is connected to one current electrode (typically the drain) of the MOSFET, and the housing of which can be directly coupled to external devices such as PCBs and the like. The crimping type MOSFET array or DIRECTFET can be arranged in an annular mode or in a matrix mode.
As shown in fig. 3, a schematic diagram of a ring arrangement of switching elements is presented in an embodiment of the present invention, in an approximately concentric ring arrangement, each ring representing a switching element in fig. 3. In one embodiment, the outer ring may correspond to the switch QG in the turn-off module in the drive module shown in fig. 1, and the intermediate ring and the inner ring may correspond to the switch QE in the turn-off module in the drive module shown in fig. 1. Although fig. 3 herein shows the switching elements arranged in a circular ring shape on the circuit board and provided with 3 concentric rings, it should be understood that the switching elements may also be arranged in a circular ring shape of any other shape on the circuit board, for example, elliptical, square, polygonal, etc.; the switching element may be provided with one or more rings, for example a single ring as shown in fig. 4.
As shown in fig. 5, an elastic structure suitable for a crimping MOSFET is also described in the embodiment of the present invention, and the elastic structure includes a main spring 81, two auxiliary elastic sheets 82, and a metal base 83. The metal base 83 has a groove structure, and one end of the main spring 81 is coupled with the groove of the metal base 83. One end of the auxiliary spring 82 is coupled with the metal base 83; the other end of the main spring 81 is coupled to the bottom groove of the first conductive block 7, and the other ends of the two auxiliary elastic pieces 82 are in slight contact or not contact with the bottom groove of the first conductive block 7 in the absence of external pressure.
Based on the elastic structure of fig. 5, as shown in fig. 6, a circuit board 15 is further described in the embodiment of the present invention, where the circuit board 15 includes a top circuit layer, a first insulating and heat-conducting layer, an intermediate circuit layer, a second insulating and heat-conducting layer, and a copper substrate. The circuit board 15 may be a conventional FR4 base material circuit board, or an aluminum substrate or a copper substrate.
As shown in fig. 7, the elastic structure 8 and the crimping MOSFET are disposed in the groove at the bottom of the first conductive block 7, the top of the elastic structure 8 is electrically connected with the inner surface of the groove, the first conductive block 7 is not in contact with the circuit board 15 under the condition that no pressure is applied, and the first conductive block 7 is electrically connected with the crimping MOSFET drain only through the elastic structure 8. The metal base 83 at the bottom of the elastic structure 8 is coupled to the top of the drain terminal of the press-fit MOSFET, and the source terminal and the gate terminal at the bottom of the press-fit MOSFET are electrically connected with the circuit board 15; the crimping type MOSFET is arranged on the circuit board 15; the second conductive block 16 is connected to the bottom of the circuit board 15.
In this embodiment, the electrical device using the crimping MOSFET array and the elastic structure in fig. 5 has the following properties in terms of electrical characteristics: when the pressure applied between the first conductive block 7 and the second conductive block 16 is smaller, the deformation of the elastic structure 8 is smaller, the first conductive block 7 is not contacted with the circuit board 15, the first conductive block 7 is electrically connected with the crimping MOSFET drain terminal only through the elastic structure 8, and the auxiliary elastic sheet 82 in the elastic structure 8 is used for increasing the flow area and the contact area and reducing the flow resistance and the thermal resistance.
When pressure is applied between the first conductive block 7 and the second conductive block 16, the elastic structure 8 deforms greatly, the first conductive block 7 is in contact with the circuit board 15, the first conductive block 7 can be electrically connected with the crimping MOSFET drain through the elastic structure 8, and can also be electrically connected with the crimping MOSFET drain terminal through the copper-clad area of the top circuit layer of the circuit board 15 and the contact surface of the first conductive block 7 and the circuit board 15, so that the flow area of the first conductive block 7 and the crimping MOSFET drain is increased, and the flow resistance is reduced. Also, the auxiliary spring 7 in the elastic structure 8 is used for increasing the flow area and the contact area and reducing the flow resistance and the thermal resistance.
In this embodiment, the elastic structure 8 may also be a spring, such as a belleville spring. The adoption of the spring structure can ensure that the switching element is tightly connected with the cathode of the power semiconductor element through the cathode copper block, and the switching element is not crushed due to excessive pressure.
In this embodiment, as shown in fig. 1, the electrical device further includes a coaxial cable 19, where the circuit board is connected to the driving circuit through the coaxial cable 19, preferably, the coaxial cable 19 may be plural, for example, to provide a gate signal of a switching element, or to provide a gate-cathode connection or gate-to-cathode connection for injecting an open gate current, or a cathode-to-cathode connection for detecting an overcurrent protection.
In this embodiment, the electrical device may further comprise a package housing, which may encapsulate the power semiconductor element 4 and the drive module together with the second and third conductive blocks 16, 5. In particular, the enclosure may comprise a support 1. The third conductive block 5 and the second conductive block 16 may each have an extension extending from a side thereof. The support 1 may be arranged between the extension of the third conductive block 5 and the second conductive block 16, thereby forming the cavity 2. The power semiconductor element 4, the circuit board 15, etc. may be provided in the cavity 2. The support 1 may be formed of ceramic. In one embodiment, the outside of the support 1 may be provided with protrusions (also called umbrella skirt structure), as shown in fig. 1, in order to increase the creepage distance and improve the insulation properties. In one embodiment, the sealed cavity 2 may be filled with a gas that is stable in nature and not easy to decompose, such as nitrogen, helium, etc., so as to further protect the power semiconductor element 4 from the external environment. The support 1 may also be provided with an opening for passing the coaxial cable 19.
As shown in fig. 8, another electrical device is shown in the embodiment of the present invention, and the structure of fig. 2 is basically the same as that of fig. 1, except that a water cooling channel 20 is added to the electrical device in fig. 2 based on the structure of fig. 1, and a plurality of water tanks 21 are provided in the first conductive block 7. Therefore, a water cooling channel is arranged in the electric device, and the power semiconductor element can be guaranteed to effectively dissipate heat.
As shown in fig. 9, another electrical device is described in the present embodiment, which may include a power semiconductor element, a circuit board, a driving module including one or more switching elements disposed on the circuit board, a first conductive block 24, a second conductive block 25, one or more elastic structures, and one or more connectors, similar to fig. 1. The embodiment shown in fig. 9 differs from the embodiment shown in fig. 1 in that: the circuit board is arranged on the side surface of the first conductive block 24; the gate terminal, the source terminal, and the drain terminal of the switching element may be electrically connected to the circuit board by soldering or other available electrical connection means; and the driving module disposed on the circuit board may further include a capacitor 23 attached to the circuit board (in the drawing, at the lower surface of the circuit board). In one embodiment, the capacitor 23 may be electrically connected to the switching element through a circuit board. Also included in fig. 9 is a coaxial cable 22 with a capacitor 23 pre-charged and a control cable 26 for the gate terminal of the switching element.
In this embodiment, the first conductive block shown in fig. 1, 8 and 9 may be integrally formed. Preferably, if the switching element adopts a crimp-type MOSFET and adopts the elastic structure shown in fig. 5, further, if the crimp-type MOSFET adopts the drain electrodes of different ring MOSFETs shown in fig. 10 with different electric potentials, a plurality of first conductive blocks should be designed, and an insulating ring interlayer is added between the different first conductive blocks, and the plurality of first conductive blocks are respectively associated with the MOSFET drain electrodes with different electric potentials on the drain electrodes, as shown in fig. 11a and 11 b; further, if the sources of the different ring MOSFETs are at different potentials, a plurality of second conductive blocks should be designed, and the second conductive blocks are associated with MOSFETs whose sources have different potentials, respectively.
In this embodiment, the first conductive block, the second conductive block and the third conductive block are all metal blocks with conductive properties, such as copper blocks.
As shown in fig. 12, an embodiment of the present invention provides a schematic circuit diagram of an electrical device, which may include a driving module, a package, and a power semiconductor element. The driving module can be used for driving the power semiconductor element to perform switching action. The drive module comprises at least a shut-off module for shutting off the power semiconductor element, in fig. 12, the shut-off module comprises at least switching elements QG, QE, when the power semiconductor element is shut off, the switch QG of the shut-off module is turned on, the switch QE is turned off, and current commutates from the cathode K to the gate G of the power semiconductor element, thereby shutting off the power semiconductor element.
Fig. 13 is a schematic circuit diagram of another electrical device according to an embodiment of the present invention, where the electrical device shown in fig. 13 includes a turn-off module, a package, and a power semiconductor element. The turn-off module shown in fig. 13 may include a switching element QG, a capacitor C OFF, and a voltage source V. A voltage source V may be used to precharge the capacitor C OFF. When the power semiconductor element is to be turned off, the switch QG is turned on, so that a current is commutated from the cathode K to the gate G through the precharged capacitor C OFF, thereby turning the power semiconductor element off.
In this embodiment, the power semiconductor element may have a control terminal (G) and current terminals (a and K). Examples of power semiconductor elements may include, but are not limited to, gate Commutated Thyristors (GCTs), gate turn-off thyristors (GTOs), etc., while the electrical devices shown in fig. 9 may constitute Integrated Gate Commutated Thyristors (IGCTs). The electrical device shown in fig. 1 may constitute an emitter turn-off thyristor IETO and an internal commutation thyristor ICT.
In this embodiment, the electrical device is formed by combining a thyristor device and a corresponding package structure, and is used for controlling an electronic circuit, etc.
Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. An electrical device, characterized by:
comprising the following steps:
A power semiconductor element, wherein a control electrode and a current electrode of the power semiconductor element are annularly arranged, the control electrode is arranged on an annular outer ring, and the current electrode is arranged on an inner ring;
a driving module including at least one switching element for driving the power semiconductor element; the switching elements are arranged in a circular array or a matrix array, wherein the switching elements include drain and source terminals as current terminals and a gate terminal as a control terminal;
One or more first conductive blocks disposed on one side of the power semiconductor element for providing connection of the switching element to the current electrode;
The elastic structure comprises a base, auxiliary elastic pieces and a spring, wherein the bottom of the base is coupled with the top of a drain terminal of the switch element, a groove is further formed in the base, one end of the spring is coupled with the groove of the base, the other end of the spring is coupled with the groove at the bottom of the first conductive block, the auxiliary elastic pieces are arranged on two sides of the spring, and one end of each auxiliary elastic piece is coupled with the base;
At least one circuit board, and a drain terminal and a gate terminal of the switching element are coupled to the circuit board;
At least one second conductive block coupled with the circuit board;
When the pressure applied between the first conductive block and the second conductive block is smaller than or equal to a preset pressure value, the first conductive block is not contacted with the circuit board, and the first conductive block can be connected with the drain terminal of the switching element only through the elastic structure;
When the pressure applied between the first conductive block and the second conductive block is larger than the preset pressure value, the first conductive block is in contact with the circuit board, and the first conductive block can be connected with a drain terminal of the switching element through the elastic structure or can be connected with a drain of the switching element through the circuit board;
One or more connection members disposed at a side of the first conductive block and spaced apart from the first conductive block, the connection members being connected to a portion of the control electrode, and the connection members being associated with the respective switching elements through elastic structures.
2. An electrical device according to claim 1, characterized in that:
When the drain terminals of the switching elements in the same array are at different potentials, a plurality of first conductive blocks are arranged to be associated with the switching elements, and insulating ring interlayers are arranged between the different first conductive blocks.
3. An electrical device according to claim 1, characterized in that:
when the source terminals of the switching elements in the same array are at different potentials, a plurality of second conductive blocks are arranged to be associated with the switching elements.
4. An electrical device according to claim 1, characterized in that:
the drive module also includes a capacitor attached to the circuit board.
5. An electrical device according to claim 1, characterized in that:
A passage for cooling is provided in the first conductive block.
6. An electrical device according to claim 1, characterized in that:
Further comprises:
a coaxial cable for connecting the circuit board to the outside;
A third conductive block coupled to a current electrode of the power semiconductor element; and a package case that encapsulates the power semiconductor element and the driving module together with the second conductive block and the third conductive block.
7. An electrical device according to claim 1, characterized in that:
the power semiconductor element comprises a gate commutated thyristor and a gate turn-off thyristor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810827090.XA CN110767643B (en) | 2018-07-25 | 2018-07-25 | Electrical device |
| EP18850023.5A EP3678173A4 (en) | 2017-09-01 | 2018-09-03 | Electrical device and electrical apparatus |
| PCT/CN2018/103750 WO2019042446A1 (en) | 2017-09-01 | 2018-09-03 | Electrical device and electrical apparatus |
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| CN201810827090.XA CN110767643B (en) | 2018-07-25 | 2018-07-25 | Electrical device |
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| CN110767643B true CN110767643B (en) | 2024-05-31 |
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| CN1561543A (en) * | 2001-09-10 | 2005-01-05 | Abb瑞士有限公司 | Pressure-contactable power semiconductor module |
| CN102446867A (en) * | 2010-10-01 | 2012-05-09 | 赛米控电子股份有限公司 | Power semiconductor module with a base module and a connection module |
| CN102956570A (en) * | 2011-08-17 | 2013-03-06 | Abb技术有限公司 | Power semiconducter module and semiconducter module assembly with multiple power semiconducter modules |
| CN207367957U (en) * | 2017-09-01 | 2018-05-15 | 清华大学 | Electric device and electric device |
| CN208690256U (en) * | 2018-07-25 | 2019-04-02 | 清华大学 | A kind of electric device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005054543A1 (en) * | 2005-11-14 | 2007-05-31 | Peter Köllensperger | Semiconductor switch with integrated control circuit |
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| JPH1167797A (en) * | 1997-08-08 | 1999-03-09 | Mitsubishi Electric Corp | Pressure welded semiconductor device |
| CN1561543A (en) * | 2001-09-10 | 2005-01-05 | Abb瑞士有限公司 | Pressure-contactable power semiconductor module |
| CN102446867A (en) * | 2010-10-01 | 2012-05-09 | 赛米控电子股份有限公司 | Power semiconductor module with a base module and a connection module |
| CN102956570A (en) * | 2011-08-17 | 2013-03-06 | Abb技术有限公司 | Power semiconducter module and semiconducter module assembly with multiple power semiconducter modules |
| CN207367957U (en) * | 2017-09-01 | 2018-05-15 | 清华大学 | Electric device and electric device |
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Application publication date: 20200207 Assignee: Beijing Qingneng Xinyan Technology Co.,Ltd. Assignor: TSINGHUA University Contract record no.: X2023980032243 Denomination of invention: An electrical device Granted publication date: 20221223 License type: Common License Record date: 20230216 |
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