JP3238945B2 - Solar cell and method of manufacturing the same - Google Patents
Solar cell and method of manufacturing the sameInfo
- Publication number
- JP3238945B2 JP3238945B2 JP18226792A JP18226792A JP3238945B2 JP 3238945 B2 JP3238945 B2 JP 3238945B2 JP 18226792 A JP18226792 A JP 18226792A JP 18226792 A JP18226792 A JP 18226792A JP 3238945 B2 JP3238945 B2 JP 3238945B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- antireflection film
- junction
- grooves
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Description
【０００１】[0001]
【産業上の利用分野】本発明は、２層の反射防止膜を有
する太陽電池およびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell having a two-layer antireflection film and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】太陽電池の反射防止のため、その表面に
テクスチャ構造が用いられている。しかし、多結晶太陽
電池に用いられる多結晶シリコン基板は、結晶粒ごとに
面方位が異なるため、単結晶に用いられるテクスチャエ
ッチングでは、基板全体を均一な低反射率の表面にはで
きない。そこで、従来のテクスチャ表面処理方法に代
え、ダイシング装置等を用いて、多結晶シリコン基板表
面全体に多数の溝を形成した低反射率構造により、特性
向上を実現している。さらに反射損失を低減し、特性を
向上させるために、従来のＴｉＯ2 膜等の単層反射防止
膜に代えて、ＭｇＦ 2 ／ＴｉＯ2 等の二層反射防止膜が
用いられている。2. Description of the Related Art To prevent reflection of a solar cell,
A texture structure is used. But the polycrystalline sun
Polycrystalline silicon substrates used in batteries
The texture orientation used for single crystals
In etching, the entire substrate is placed on a uniform low-reflectance surface.
I can't. Therefore, instead of the conventional texture surface treatment method,
Using a dicing machine, etc.
Low reflectance structure with many grooves formed on the entire surface
Has improved. Further reduce reflection loss and improve characteristics
In order to improve the conventional TiOTwoSingle layer anti-reflection of film etc.
MgF instead of membrane Two/ TiOTwoDouble-layer anti-reflection coating
Used.
【０００３】図３は、従来の一例の略断面図である。Ｐ
型多結晶シリコン基板１の表面は、多数の溝が形成さ
れ、その表面にＮ+ 拡散層２が形成され、さらにその上
に、パッシベーション膜４，たとえばＴｉＯ2 による第
１の反射防止膜５，たとえばＭｇＦ2 による第２の反射
防止膜５−１等が積層され、これらの層を貫いてＮ＋拡
散層２に至る電極６が設けられている。裏面にはＢＳＦ
層３が設けられている。裏面電極は省略してある。FIG. 3 is a schematic sectional view of an example of the prior art. P
A large number of grooves are formed on the surface of the type polycrystalline silicon substrate 1, an N + diffusion layer 2 is formed on the surface thereof, and a passivation film 4, a first antireflection film 5 made of, for example, TiO 2 For example, a second antireflection film 5-1 made of MgF 2 and the like are stacked, and an electrode 6 that penetrates these layers and reaches the N + diffusion layer 2 is provided. BSF on the back
Layer 3 is provided. The back electrode is omitted.
【０００４】[0004]
【発明が解決しようとする課題】多結晶シリコン基板表
面全体に多数の溝を形成することは、表面反射率の低減
には有効であるが、ＰＮ接合面積が増加するために開放
電圧が低下するという欠点がある。Forming a large number of grooves on the entire surface of a polycrystalline silicon substrate is effective in reducing the surface reflectance, but the open-circuit voltage is reduced due to an increase in the PN junction area. There is a disadvantage that.
【０００５】[0005]
【課題を解決するための手段】本発明の太陽電池におい
ては、シリコン基板の表面に多数の溝を設ける代わり
に、第２の反射防止膜としてブレードにより形成した溝
の斜面の傾斜角が４５°以上である多数の溝を有する透
明樹脂を用いた。In the solar cell according to the present invention, instead of providing a large number of grooves on the surface of a silicon substrate, grooves formed by a blade as a second antireflection film are used.
A transparent resin having a large number of grooves having a slope angle of 45 ° or more was used.
【０００６】[0006]
【作用】本発明によれば、シリコン基板自身には溝が形
成されていないから、ＰＮ接合面積が増加せず、多結晶
太陽電池の開放電圧を低下させることなく、低反射率の
反射防止膜を容易に形成することができ、素子効率を改
善することができる。According to the present invention, since no groove is formed in the silicon substrate itself, the PN junction area is not increased, the open-circuit voltage of the polycrystalline solar cell is not reduced, and the antireflection film having a low reflectance is provided. Can be easily formed, and the element efficiency can be improved.
【０００７】[0007]
【実施例】図１は、本発明による太陽電池の略断面図で
ある。Ｐ型多結晶シリコン基板１の表面には、Ｎ+ 拡散
層２，パッシベーション膜４，第１の反射防止膜５が積
層され、その表面に多数の溝７−１，７−１，…を有す
る透明樹脂層７が設けられている。これらの層を貫い
て、電極６が設けられ裏面にはＢＳＦ層３が設けられて
いる。裏面電極は省略している。FIG. 1 is a schematic sectional view of a solar cell according to the present invention. On the surface of the P-type polycrystalline silicon substrate 1, an N + diffusion layer 2, a passivation film 4, and a first antireflection film 5 are laminated, and the surface has a number of grooves 7-1, 7-1,. A transparent resin layer 7 is provided. An electrode 6 is provided through these layers, and a BSF layer 3 is provided on the back surface. The back electrode is omitted.
【０００８】以下はその製法の一例である。まず、図２
（ａ）に示すように、Ｐ型多結晶シリコン基板１の表面
にＮ+ 拡散層２を形成後、酸性雰囲気中でＮ+ 拡散層２
の表面にパッシベーション膜４となるＳｉＯ2 膜を約１
５０Å形成した。その後、第１層の反射防止膜５とし
て、ＴｉＯ2 を常圧ＣＶＤで形成した。次に、裏面にＢ
ＳＦ層３となるＰ+ 層を形成し、受光面側には銀ペース
トを焼成貫通させ、さらにはんだディップを行ない電極
６を形成した。The following is an example of the manufacturing method. First, FIG.
(A), the following form N + diffusion layer 2 on the surface of the P-type polycrystalline silicon substrate 1, N + diffusion layer in an acid atmosphere 2
A SiO 2 film serving as a passivation film 4 on the surface of
50 ° formed. Thereafter, TiO 2 was formed as the first layer antireflection film 5 by normal pressure CVD. Next, B on the back
A P + layer serving as the SF layer 3 was formed, and a silver paste was baked and penetrated on the light receiving surface side, and further, a solder dip was performed to form an electrode 6.
【０００９】次に、この素子の受光面側に、液状透明エ
ポキシ樹脂を、スピンナを用いて塗布し、これを１３０
℃で３時間乾燥，固化して約２００μｍ堆積させた。こ
の樹脂は屈折率１．５程度の透明樹脂であれば他の樹脂
を用いてもよく、または、その他の物質を用いても構わ
ない。そして、この樹脂表面にタイシング装置を用い微
細な多数の溝を形成する。Next, a liquid transparent epoxy resin is applied to the light receiving surface side of this element by using a spinner,
It was dried and solidified at a temperature of 3 ° C. for 3 hours to deposit about 200 μm. As this resin, another resin may be used as long as it is a transparent resin having a refractive index of about 1.5, or another material may be used. Then, a large number of fine grooves are formed on the resin surface by using a tiling device.
【００１０】図２（ｂ）は溝の形成方法を示す側面図で
ある。この加工には、円形の金属板の周囲にダイヤモン
ドの微粒子を付着させた円板状のブレード８を用い、約
３００００ｒｐｍ程度の高速度で回転させて形成した。
ブレードの形状は、図に示すように、溝の斜面の傾斜角
θ1 が５５°となるように、ブレード８の刃先角θ2が
７０°のものを使用し、また、溝の深さｄは約７０μｍ
とした。傾斜角θ1 は、４５°以上であれば反射率を低
減することができる。FIG. 2B is a side view showing a method of forming a groove. This processing was performed by using a disk-shaped blade 8 in which diamond fine particles were adhered around a circular metal plate, and rotated at a high speed of about 30,000 rpm.
Blade shape, as shown in FIG., As the inclination angle theta 1 of the groove slope is 55 °, using what included angle theta 2 of the blade 8 is 70 °, also, the groove depth d Is about 70 μm
And If the inclination angle θ 1 is 45 ° or more, the reflectance can be reduced.
【００１１】なお、液状透明樹脂を塗布乾燥後溝を形成
する代わりに、多数の溝を形成した透明体を貼付けるこ
ともできる。Instead of forming a groove after applying and drying the liquid transparent resin, a transparent body having a large number of grooves can be attached.
【００１２】単結晶シリコン基板にも応用できる。The present invention can be applied to a single crystal silicon substrate.
【００１３】[0013]
【発明の効果】下記の表１は、本発明による素子特性と
従来の素子の特性との比較を示す。The following Table 1 shows a comparison between the characteristics of the device according to the present invention and the characteristics of the conventional device.
【００１４】[0014]
【表１】 この表から、本発明により従来の構造と同等の低反射率
で、より開放電圧の高い素子を作成することができるこ
とがわかる。これにより太陽電池の高効率化が図れる。[Table 1] From this table, it can be seen that the present invention makes it possible to produce an element having a lower reflectance equivalent to that of the conventional structure and a higher open-circuit voltage. Thereby, the efficiency of the solar cell can be improved.
【図１】本発明による一実施例の略断面図である。FIG. 1 is a schematic sectional view of an embodiment according to the present invention.
【図２】（ａ）は第２の反射防止膜を形成する前の太陽
電池の断面図であり、（ｂ）は溝の形成方法を示す側面
図である。2A is a cross-sectional view of a solar cell before a second anti-reflection film is formed, and FIG. 2B is a side view illustrating a method for forming a groove.
【図３】従来の太陽電池の一例の略断面図である。FIG. 3 is a schematic sectional view of an example of a conventional solar cell.
【符号の説明】 １ Ｐ型多結晶シリコン基板 ２ Ｎ+ 拡散層 ３ ＢＳＦ層 ４ パッシベーション膜 ５ 反射防止膜 ６ 電極 ７ 透明樹脂層[Description of Signs] 1 P-type polycrystalline silicon substrate 2 N + diffusion layer 3 BSF layer 4 Passivation film 5 Antireflection film 6 Electrode 7 Transparent resin layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 利根川 正 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (72)発明者 竹田 喜彦 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (56)参考文献 特開 昭62−205671（ＪＰ，Ａ) 特開 昭62−237401（ＪＰ，Ａ) 特開 昭60−88481（ＪＰ，Ａ) 特開 平５−315634（ＪＰ，Ａ) 実開 昭63−15071（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 - 31/078 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tadashi Tonegawa 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Yoshihiko 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Sharp Corporation (56) References JP-A-62-205671 (JP, A) JP-A-62-237401 (JP, A) JP-A-60-88481 (JP, A) JP-A-5-315634 (JP, A) Actual Opening Sho 63-15071 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 31/04-31/078
Claims (3)
したＰＮ接合と、該ＰＮ接合の表面に平坦に形成した第
１の反射防止膜と、該第１の反射防止膜の表面に設けら
れ、ブレードにより形成した溝の斜面の傾斜角が４５°
以上である多数の溝を有する透明樹脂からなる第２の反
射防止膜とを備えることを特徴とする太陽電池。1. A PN junction having a flat surface formed on a light receiving surface side of a substrate, a first antireflection film formed flat on a surface of the PN junction, and a PN junction formed on a surface of the first antireflection film. The inclination angle of the slope of the groove formed by the blade is 45 °.
And a second antireflection film made of a transparent resin having a large number of grooves as described above .
反射防止膜を形成し、その表面に形成した透明樹脂から
なる第２の反射防止膜となる透明層に反射低減用の溝の
斜面の傾斜角が４５°以上である多数の溝をブレードに
より形成することを特徴とする太陽電池の製造方法。2. A first anti-reflection film is formed on a surface of a substrate on which a PN junction is formed, and a second anti-reflection film made of a transparent resin formed on the surface is provided on a transparent layer serving as a second anti-reflection film .
Numerous grooves with a slope angle of 45 ° or more on the blade
A method for manufacturing a solar cell, comprising:
反射防止膜を形成し、その表面にブレードにより形成し
た溝の斜面の傾斜角が４５°以上である反射低減用の多
数の溝を有する第２の反射防止膜となる透明体を貼り付
けることを特徴とする太陽電池の製造方法。3. A first antireflection film is formed on a surface of a substrate on which a PN junction is formed, and the first antireflection film is formed on the surface by a blade.
A method of manufacturing a solar cell, comprising: attaching a transparent body serving as a second anti-reflection film having a large number of grooves for reducing reflection , wherein the inclination angle of the inclined surface of the groove is 45 ° or more .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18226792A JP3238945B2 (en) | 1992-07-09 | 1992-07-09 | Solar cell and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18226792A JP3238945B2 (en) | 1992-07-09 | 1992-07-09 | Solar cell and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0629562A JPH0629562A (en) | 1994-02-04 |
| JP3238945B2 true JP3238945B2 (en) | 2001-12-17 |
Family
ID=16115273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18226792A Expired - Fee Related JP3238945B2 (en) | 1992-07-09 | 1992-07-09 | Solar cell and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3238945B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0911884B1 (en) * | 1997-10-27 | 2005-02-09 | Sharp Kabushiki Kaisha | Photoelectric converter and method of manufacturing the same |
| WO2005083799A1 (en) * | 2004-02-24 | 2005-09-09 | Bp Corporation North America Inc | Process for manufacturing photovoltaic cells |
| US8198115B2 (en) | 2008-04-25 | 2012-06-12 | Ulvac, Inc. | Solar cell, and method and apparatus for manufacturing the same |
| US8048250B2 (en) * | 2009-01-16 | 2011-11-01 | Genie Lens Technologies, Llc | Method of manufacturing photovoltaic (PV) enhancement films |
| US7968790B2 (en) | 2009-01-16 | 2011-06-28 | Genie Lens Technologies, Llc | Photovoltaic (PV) enhancement films for enhancing optical path lengths and for trapping reflected light |
| US7904871B2 (en) | 2009-01-16 | 2011-03-08 | Genie Lens Technologies, Llc | Computer-implemented method of optimizing refraction and TIR structures to enhance path lengths in PV devices |
| US8338693B2 (en) | 2009-01-16 | 2012-12-25 | Genie Lens Technology, LLC | Solar arrays and other photovoltaic (PV) devices using PV enhancement films for trapping light |
-
1992
- 1992-07-09 JP JP18226792A patent/JP3238945B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0629562A (en) | 1994-02-04 |
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