JP3203459B2 - Liquid crystal display - Google Patents
Liquid crystal displayInfo
- Publication number
- JP3203459B2 JP3203459B2 JP34282193A JP34282193A JP3203459B2 JP 3203459 B2 JP3203459 B2 JP 3203459B2 JP 34282193 A JP34282193 A JP 34282193A JP 34282193 A JP34282193 A JP 34282193A JP 3203459 B2 JP3203459 B2 JP 3203459B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- thin film
- crystal display
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、トランジスタ等の電気
的素子を含む薄膜面部を有する基板を用いた液晶表示装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device using a substrate having a thin film portion including electric elements such as transistors.
【０００２】[0002]
【従来の技術】トランジスタ等の電気的素子を含む薄膜
を有する基板の一部を除去し、前記薄膜のみの透明化さ
れた薄膜面部が形成された素子基板を用いて液晶表示装
置を作製する方法は、例えば、特開平３−１９４１１５
号公報等で開示されている。2. Description of the Related Art A method of manufacturing a liquid crystal display device by removing a part of a substrate having a thin film including an electric element such as a transistor and using an element substrate having a thin film surface portion made transparent only of the thin film. Is described, for example, in Japanese Patent Application Laid-Open No. 3-194115.
This is disclosed in Japanese Patent Publication No.
【０００３】かかる液晶表示装置は従来、熱酸化膜を有
する単結晶シリコンＳＯＩ基板上にトランジスタ等から
なる駆動回路等を形成し、該シリコン基板とガラス基板
を用いて液晶セルを形成した後、該シリコン基板の表示
部となるべき部分のみの裏面エッチングを行い不透明な
シリコン部分を除去し、前記回路等を含む大略透明な薄
膜と成すことによって、透過表示が可能な装置構成とし
ていた。[0003] In such a liquid crystal display device, a driving circuit or the like including transistors and the like is formed on a single crystal silicon SOI substrate having a thermal oxide film, and a liquid crystal cell is formed using the silicon substrate and the glass substrate. The device configuration capable of transmissive display has been provided by etching the back surface only of the portion to be the display portion of the silicon substrate to remove the opaque silicon portion and forming a substantially transparent thin film including the circuit and the like.
【０００４】[0004]
【発明が解決しようとする課題】しかし、前記駆動回路
等を有する薄膜は、幾何学的構造や力学的構造が複雑化
するため、力学的、更には電気的状態が不安定になり易
く、その結果、前記液晶表示装置の表示品質が安定しな
いという問題が有った。However, the thin film having the driving circuit and the like has a complicated geometrical structure and a dynamic structure, so that the mechanical state and the electric state tend to be unstable. As a result, there is a problem that the display quality of the liquid crystal display device is not stable.
【０００５】前記薄膜の力学的状態に関しては、例えば
前記薄膜が前記基板に対して引張応力（テンシル）を示
す場合には、表示部になるべき部分のシリコン除去後も
該部分の薄膜はピンと張った状態となる。ただし前記引
張応力が非常に弱い場合には、前記液晶セルのギャップ
を均一に保持する事が困難であり、液晶注入後の前記薄
膜はたれぎみである。一方、前記引張応力が強過ぎる場
合には、セルギャップは均一化するものの、図２に示さ
れるように前記薄膜の膜破壊強度が低下し、クラック等
の破壊が生じ、割れ易くなってしまう。Regarding the mechanical state of the thin film, for example, when the thin film shows a tensile stress (tensil) with respect to the substrate, the thin film in the portion to become a display portion is still taut after silicon is removed. State. However, when the tensile stress is very weak, it is difficult to keep the gap of the liquid crystal cell uniform, and the thin film after liquid crystal injection is sagging. On the other hand, if the tensile stress is too high, the cell gap becomes uniform, but the film breaking strength of the thin film is reduced as shown in FIG.
【０００６】また前記薄膜が前記基板に対して圧縮応力
（コンプレッシブ）を示す場合には、前記薄膜にはシワ
が寄り、たわみ、均一なセルギャップを実現できず、こ
の応力が特に強い場合には前記薄膜の大きな曲率による
破壊が生じていた。In the case where the thin film exhibits a compressive stress (compressive) with respect to the substrate, the thin film is wrinkled, cannot be bent, and a uniform cell gap cannot be realized. In this case, the thin film was broken by a large curvature.
【０００７】また、上述した力学的状態に関連して、回
路素子の電気的特性が変動する。具体的な例としては、
テンシル性応力によるＢＪＴの速度向上や、ＭＯＳＦＥ
Ｔのｇm，Ｖthシフトが報告されている。[0007] Further, the electrical characteristics of the circuit element fluctuate in relation to the above-mentioned mechanical state. As a specific example,
Speed improvement of BJT due to tensile stress, MOSFE
A g m , V th shift of T has been reported.
【０００８】本発明の目的は、上述したような従来技術
の有する問題点に鑑み、電気的素子を含む薄膜面部を有
する基板を用いて液晶セルを構成した液晶表示装置にお
いて、該薄膜の力学的状態、更には該薄膜内の電気的素
子の特性を安定化せしめ、表示品質並びに歩留りを向上
せしめることにある。An object of the present invention is to provide a liquid crystal display device in which a liquid crystal cell is formed using a substrate having a thin film surface portion including an electric element in view of the above-mentioned problems of the prior art. Another object of the present invention is to stabilize the state, and furthermore, to stabilize the characteristics of the electric elements in the thin film and improve the display quality and the yield.
【０００９】[0009]
【課題を解決するための手段及び作用】上記目的を達成
すべく成された本発明は、半導体基板上に電気的素子を
含む薄膜を有し、且つ上記半導体基板の画像表示部に対
応する部分が除去されて上記薄膜面部が形成されている
素子基板を用いた液晶表示装置において、上記薄膜は、
上記半導体基板よりも熱膨張率の大きな値を有し 、 高温
で膜形成され 、 該高温よりの温度降下によって上記半導
体基板に対してテンシル性応力を生じるのに十分な膜厚
に設定した応力制御膜を有することを特徴とする液晶表
示装置にある。SUMMARY OF THE INVENTION The present invention, which has been made to achieve the above object, has a thin film including an electric element on a semiconductor substrate and a portion corresponding to an image display portion of the semiconductor substrate. In a liquid crystal display device using an element substrate on which the thin film surface portion is formed by removing the thin film ,
It has a large value of thermal expansion than the semiconductor substrate, a high temperature
In the film formation, the semiconductor by the temperature drop from the hot
To produce a tensile property stress to the body substrate in the liquid crystal display device characterized by having a stress control layer set to a sufficient film thickness.
【００１０】[0010]
【００１１】前述のように電気的素子を含む薄膜面部を
表示部に有する液晶表示装置においては、この薄膜の応
力は、セルギャップを均一に保持可能で且つ膜破壊強度
の比較的大きな、弱テンシル（おおよその目安としては
３×１０8〜３×１０9ｄｙｎｅ／ｃｍ2程度）な状態に
制御されていることが望ましい訳であるが、本発明に関
わる前記応力制御膜は、これを可能ならしめるものであ
る。As described above, in a liquid crystal display device having a thin film surface portion including an electric element in a display portion, the stress of this thin film is a weak tensile force which can maintain a uniform cell gap and has a relatively large film breaking strength. (Approximately 3 × 10 8 to 3 × 10 9 dyne / cm 2 ). It is desirable that the stress control film according to the present invention should It is a thing to tighten.
【００１２】即ち、前記半導体基板よりも熱膨張率の大
きな応力制御膜は、その形成温度よりも温度が下がる
と、前記半導体基板に対してテンシル性の応力を示すの
が通常である。このような半導体基板と応力制御膜の組
合せとしては、例えばシリコン基板とシリコン窒化膜、
シリコン基板とアルミ膜、シリコン基板とポリイミド
膜、ガラス基板とアルミ膜、ガラス基板とポリイミド膜
等が挙げられる。一方、前記半導体基板よりも熱膨張の
小さな応力制御膜は、その形成温度よりも温度が上がる
と、前記半導体基板に対して同様なテンシル性を示す。
このような半導体基板と応力制御膜の組合せとしては、
例えばシリコン基板とシリコン酸化膜、シリコン基板と
ＢＰＳＧ膜、シリコン基板とＩＴＯ膜、ガラス基板とＢ
ＰＳＧ膜、ガラス基板とＩＴＯ膜等が挙げられる。That is, a stress control film having a larger coefficient of thermal expansion than the semiconductor substrate usually shows a tensile stress on the semiconductor substrate when the temperature is lower than the formation temperature. As a combination of such a semiconductor substrate and a stress control film, for example, a silicon substrate and a silicon nitride film,
Examples include a silicon substrate and an aluminum film, a silicon substrate and a polyimide film, a glass substrate and an aluminum film, and a glass substrate and a polyimide film. On the other hand, the stress control film having a smaller thermal expansion than the semiconductor substrate exhibits the same tensility to the semiconductor substrate when the temperature is higher than the formation temperature.
As a combination of such a semiconductor substrate and a stress control film,
For example, silicon substrate and silicon oxide film, silicon substrate and BPSG film, silicon substrate and ITO film, glass substrate and B
Examples include a PSG film, a glass substrate and an ITO film.
【００１３】このように常温でテンシル性の応力を有す
る前記応力制御膜によって、前記薄膜の応力値を好まし
いある一定の範囲内に制御することは、例えば、前記薄
膜を構成している他の膜の膜厚を考慮の上、前記応力制
御膜の膜厚を適宜設定することにより容易に行うことが
できる。As described above, controlling the stress value of the thin film within a preferable predetermined range by the stress control film having a tensile stress at room temperature can be performed, for example, by using another film constituting the thin film. It can be easily performed by appropriately setting the film thickness of the stress control film in consideration of the film thickness .
【００１４】[0014]
【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明はかかる実施例に限定されるものでないこ
とは言うまでもなく、本発明の主旨の範囲で適宜変形可
能である。EXAMPLES The following provides a detailed explanation of the present invention through examples, not intended that the present invention is limited to these Examples needless to say, it is applicable Yichun possible deformation in the scope of the gist of the present invention .
【００１５】実施例１ 本実施例の液晶表示装置について、図１の製造工程図を
用いて説明する。 Embodiment 1 The liquid crystal display of this embodiment will be described with reference to the manufacturing process diagram of FIG.
【００１６】先ず、厚さ４０００Åの埋込シリコン酸化
膜１２を有する単結晶シリコンＳＯＩ基板１０の厚さ４
０００Å程度の活性層１３に通常の方法でＰＭＯＳＦＥ
Ｔを形成した（図１（ａ））。First, a single crystal silicon SOI substrate 10 having a buried silicon oxide film 12
The active layer 13 having a thickness of about 2,000 mm is PMOSFE
T was formed (FIG. 1A).
【００１７】次いで、約８００℃での減圧ＣＶＤ法で、
厚さ６０００Åのシリコン窒化膜からなる応力制御膜１
４を形成した（図１（ｂ））。この応力制御膜の熱膨張
率は約３．０×１０-6であり、シリコン基板１１の熱膨
張率２．６×１０-6よりも大きい。Next, a low pressure CVD method at about 800 ° C.
Stress control film 1 made of a silicon nitride film having a thickness of 6000 mm
4 was formed (FIG. 1B). The thermal expansion coefficient of this stress control film is about 3.0 × 10 −6 , which is larger than the thermal expansion coefficient of the silicon substrate 11 of 2.6 × 10 −6 .
【００１８】次いで、液晶表示用の画素電極（不図
示）、さらには保護膜１５を形成し、素子基板を形成し
た（図１（ｃ））。 Next, a pixel electrode for liquid crystal display (not shown) and a protective film 15 were formed, and an element substrate was formed (FIG. 1C) .
【００１９】次に、対向電極等を形成してあるガラス基
板１６と上記素子基板とをシール材１７を用いて貼合せ
（図１（ｄ））、続いて個々の液晶セルに分割し、液晶
１８を注入した（図１（ｅ））。Next, a glass substrate 16 on which a counter electrode and the like are formed and the above-mentioned element substrate are bonded together using a sealing material 17 (FIG. 1 (d)). 18 was injected (FIG. 1 (e)).
【００２０】最後に、シリコン基板１１の表示部１９に
相当する部分を裏面からエッチング除去し、前記ＰＭＯ
ＳＦＥＴ等を内蔵する薄膜２０を露出させる。これによ
り前記液晶セルの表示部は透明化され、透過表示が可能
な液晶表示装置となった。尚、本実施例では表示部１９
の大きさを１４ｍｍ×１０ｍｍに作成した。Finally, a portion corresponding to the display portion 19 of the silicon substrate 11 is etched away from the back surface, and the PMO is removed.
The thin film 20 containing the SFET or the like is exposed. Thereby, the display portion of the liquid crystal cell was made transparent, and a liquid crystal display device capable of transmissive display was obtained. In this embodiment, the display unit 19
Was made 14 mm × 10 mm.
【００２１】本実施例で応力制御膜１４として前記高温
下で形成した厚さ６０００Åのシリコン窒化膜は、単層
では常温下で５×１０9ｄｙｎｅ／ｃｍ2程度の比較的大
きなテンシル性の応力を示すが、薄膜２０を構成してい
る他のコンプレッシブな膜の応力によって、該薄膜は最
終的に通常の使用温度範囲（−１５〜＋６０℃）で弱テ
ンシル性を示す。The silicon nitride film having a thickness of 6000Å was formed under the high temperature as a stress control film 14 in the present embodiment, at room temperature in a single layer 5 × 10 9 dyne / cm 2 about a relatively large tensile of stress However, due to the stress of other compressive films constituting the thin film 20, the thin film finally shows a weak tensility in a normal operating temperature range (−15 to + 60 ° C.).
【００２２】膜の応力は当然その膜に施されるパターニ
ングによって変化するが、本実施例において、前記応力
制御膜１４に施されるパターニングはコンタクトホール
部分についてのみであり、その開口率は１０％以下であ
るために、応力制御膜の有するテンシル性の応力が、こ
のパターニングによって減ぜられる割合は非常に小さか
った。尚、本実施例のように、素子基板の作製工程にお
いて、応力制御膜に応力設計上考慮に入れていないパタ
ーニングが必要な場合には、そのパターニングによる開
口率は約３０％以下であるのが望ましい。Although the stress of the film naturally changes depending on the patterning applied to the film, in this embodiment, the patterning applied to the stress control film 14 is only for the contact hole portion, and the aperture ratio is 10%. Because of the following, the rate at which the tensile stress of the stress control film was reduced by this patterning was very small. In the case where the stress control film requires patterning that is not taken into account in the stress design in the manufacturing process of the element substrate as in the present embodiment, the aperture ratio due to the patterning should be about 30% or less. desirable.
【００２３】以上の様にして作製した本実施例の液晶表
示装置は、表示部１９において薄膜２０は垂れることが
なく、均一なセルギャップを保持できた。また、薄膜内
にはクラック等の欠陥も無く、前記ＰＭＯＳＦＥＴで構
成した回路素子の電気的特性も安定していた。In the liquid crystal display device of the present embodiment manufactured as described above, the thin film 20 did not hang down in the display portion 19 and a uniform cell gap could be maintained. Further, there were no defects such as cracks in the thin film, and the electrical characteristics of the circuit element constituted by the PMOSFET were stable.
【００２４】[0024]
【００２５】[0025]
【００２６】[0026]
【００２７】[0027]
【００２８】[0028]
【発明の効果】以上説明した様に、電気的素子を内蔵し
た薄膜中に応力制御膜を形成した本発明の液晶表示装置
では、該薄膜の応力を好適な範囲内に容易に制御できる
と共に、電気的素子の特性を安定化できることによっ
て、表示品質を高めることができると共に、歩留りを向
上できた。As described above, in the liquid crystal display device of the present invention in which a stress control film is formed in a thin film containing an electric element, the stress of the thin film can be easily controlled within a suitable range. By being able to stabilize the characteristics of the electric elements, the display quality could be improved and the yield could be improved.
【図１】実施例１にて示す本発明の液晶表示装置の製造
工程図である。FIG. 1 is a manufacturing process diagram of the liquid crystal display device of the present invention shown in Example 1.
【図２】薄膜の引張応力−膜破壊強度特性の一例を示す
図である。FIG. 2 is a diagram showing an example of a tensile stress-film breaking strength characteristic of a thin film.
１０ ＳＯＩ基板 １１ シリコン部分 １２ 埋込シリコン酸化膜 １３ 活性層 １４ 応力制御膜 １５ 保護膜 １６ ガラス基板 １７ シール材 １８ 液晶 １９ 表示部 ２０ 薄膜 DESCRIPTION OF SYMBOLS 10 SOI substrate 11 Silicon part 12 Embedded silicon oxide film 13 Active layer 14 Stress control film 15 Protective film 16 Glass substrate 17 Sealing material 18 Liquid crystal 19 Display part 20 Thin film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 29/786 (58)調査した分野(Int.Cl.7，ＤＢ名) G02F 1/1333 500 G02F 1/1368 H01L 21/822 H01L 27/04 H01L 27/12 H01L 29/786 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 identification code FI H01L 29/786 (58) Investigated field (Int.Cl. 7 , DB name) G02F 1/1333 500 G02F 1/1368 H01L 21 / 822 H01L 27/04 H01L 27/12 H01L 29/786
Claims (3)
有し、且つ上記半導体基板の画像表示部に対応する部分
が除去されて上記薄膜面部が形成されている素子基板を
用いた液晶表示装置において、 上記薄膜は、上記半導体基板よりも熱膨張率の大きな値
を有し 、 高温で膜形成され 、 該高温よりの温度降下によっ
て上記半導体基板に対してテンシル性応力を生じるのに
十分な膜厚に設定した応力制御膜を有することを特徴と
する液晶表示装置。1. A liquid crystal display using an element substrate having a thin film including an electric element on a semiconductor substrate and removing a portion corresponding to an image display portion of the semiconductor substrate to form the thin film surface portion. In the apparatus, the thin film has a larger coefficient of thermal expansion than the semiconductor substrate.
Has been film formed at high temperature, due to temperature drop from the hot
A liquid crystal display device having a stress control film set to a thickness sufficient to generate a tensile stress on the semiconductor substrate .
ことを特徴とする請求項１に記載の液晶表示装置。2. The liquid crystal display device according to claim 1, wherein said semiconductor substrate is a silicon substrate.
ることを特徴とする請求項１に記載の液晶表示装置。3. The liquid crystal display device according to claim 1, wherein the stress control film is a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34282193A JP3203459B2 (en) | 1993-12-16 | 1993-12-16 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34282193A JP3203459B2 (en) | 1993-12-16 | 1993-12-16 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07168167A JPH07168167A (en) | 1995-07-04 |
| JP3203459B2 true JP3203459B2 (en) | 2001-08-27 |
Family
ID=18356754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34282193A Expired - Fee Related JP3203459B2 (en) | 1993-12-16 | 1993-12-16 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3203459B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7190008B2 (en) | 2002-04-24 | 2007-03-13 | E Ink Corporation | Electro-optic displays, and components for use therein |
| EP1678551B1 (en) * | 2003-10-27 | 2017-03-01 | E Ink Corporation | Electro-optic displays |
| JP6145990B2 (en) | 2012-10-29 | 2017-06-14 | セイコーエプソン株式会社 | Manufacturing method of microlens array substrate |
-
1993
- 1993-12-16 JP JP34282193A patent/JP3203459B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07168167A (en) | 1995-07-04 |
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